CN116544263A - Micro LED chip and preparation method thereof - Google Patents
Micro LED chip and preparation method thereof Download PDFInfo
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- CN116544263A CN116544263A CN202310813063.8A CN202310813063A CN116544263A CN 116544263 A CN116544263 A CN 116544263A CN 202310813063 A CN202310813063 A CN 202310813063A CN 116544263 A CN116544263 A CN 116544263A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000003491 array Methods 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 9
- 230000009471 action Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
The disclosure relates to the technical field of LED chips, in particular to a Micro LED chip and a preparation method thereof. The method comprises the following steps: providing a substrate, growing a gallium nitride layer on the substrate, and etching the gallium nitride layer to periodically prepare a plurality of LED arrays; providing a filling layer, wherein the filling layer is flush with the surface of the LED array; providing a driving chip, and bonding the filling layer with the driving chip; removing the substrate and the redundant gallium nitride layer to form a wafer structure comprising a driving chip and an LED array; forming a light guiding layer on the wafer structure; a plurality of reflecting portions are etched on the light guiding layer to integrate the display positions of the LED array. Through the steps, the multiple reflecting parts are etched on the light guide layer, and the light emitting directions of the LED arrays are changed through the reflecting action of the reflecting parts, so that the aim that the display positions of different LED arrays on the whole chip can be arranged according to the pixel arrangement requirement is fulfilled.
Description
Technical Field
The disclosure relates to the technical field of LED chips, in particular to a Micro LED chip and a preparation method thereof.
Background
The Micro LED display technology is a display technology in which self-luminous Micro LEDs are used as light-emitting pixel units, and the light-emitting pixel units are assembled on a driving panel to form a high-density LED array. As the Micro LED chip has the characteristics of small size, high integration level, self-luminescence, high stability and the like, compared with the LCD and the OLED, the Micro LED chip has the advantages of brightness, resolution, contrast ratio, energy consumption, service life, response speed, thermal stability and the like.
However, in the existing preparation process of the Micro LED chip, defects such as dislocation and the like can be generated in the GaN epitaxial layer to release stress generated by lattice mismatch in the epitaxial growth process due to mismatching of lattice constants of the substrate and GaN, and the defects can extend upwards along with the progress of the growth process. A generally effective way to reduce the dislocation density of epitaxial GaN is to use Patterned Sapphire Substrates (PSS) as the substrate for epitaxial growth, however GaN grown using Patterned Sapphire Substrates (PSS) has dislocation distribution despite a significant reduction in the overall dislocation density. Based on the dislocation distribution rule of epitaxial growth GaN on Patterned Sapphire Substrates (PSS), the dislocation density above raised pyramids is higher and the dislocation density above recessed areas and slopes is lower. In the prior art, when an LED array is prepared on a patterned sapphire substrate, the LED array is aligned and arranged at the concave position of the Patterned Sapphire Substrate (PSS), but the LED array cannot be completely arranged according to the pixel arrangement requirement.
Disclosure of Invention
In order to solve the technical problems, the disclosure provides a Micro LED chip and a preparation method thereof.
The disclosure provides a preparation method of a Micro LED chip, comprising the following steps:
s1: providing a substrate, growing a gallium nitride layer on the substrate, and etching the gallium nitride layer to periodically prepare a plurality of LED arrays;
s2: providing a filling layer, wherein the filling layer is flush with the surface of the LED array;
s3: providing a driving chip, wherein the filling layer is bonded with the driving chip;
s4: removing the substrate and the redundant gallium nitride layer to form a wafer structure comprising a driving chip and an LED array;
s5: forming a light guiding layer on the wafer structure;
s6: and etching a plurality of reflecting parts on the light guide layer to integrate the display positions of the LED array.
Optionally, the substrate is a sapphire substrate.
Optionally, the LED arrays are disposed at recessed positions of the substrate, and a plurality of LED arrays are disposed at each recessed position of the substrate.
Alternatively, the removing method in the step S4 is wet or dry chemical etching.
Optionally, etching the plurality of reflective portions on the light guiding layer includes:
forming a plurality of reflecting parts on the surface of one side of the light guide layer, which is away from the LED array, by using an etching process;
and forming a reflecting layer on the side wall of the reflecting part by using an etching process.
Optionally, the reflecting portion is a through hole or a cylinder formed on the light guiding layer.
Optionally, an end of the reflecting portion near the driving chip extends to a surface of the LED array.
Optionally, an end of the reflecting portion away from the driving chip is located at a display position of the LED array.
Optionally, the reflective layer is made of silicon oxide.
The disclosure also provides a Micro LED chip prepared by using the preparation method of the Micro LED chip.
Compared with the prior art, the technical scheme provided by the embodiment of the disclosure has the following advantages:
the disclosure provides a Micro LED chip and a preparation method thereof, comprising the following steps: providing a substrate, growing a gallium nitride layer on the substrate, and etching the gallium nitride layer to periodically prepare a plurality of LED arrays; providing a filling layer, wherein the filling layer is flush with the surface of the LED array; providing a driving chip, and bonding the filling layer with the driving chip; removing the substrate and the redundant gallium nitride layer to form a wafer structure comprising a driving chip and an LED array; forming a light guiding layer on the wafer structure; a plurality of reflecting portions are etched on the light guiding layer to integrate the display positions of the LED array. Through the steps, the multiple reflecting parts are etched on the light guide layer, and the light emitting directions of the LED arrays are changed through the reflecting action of the reflecting parts, so that the aim that the display positions of different LED arrays on the whole chip can be arranged according to the pixel arrangement requirement is fulfilled.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a top view of an LED array according to an embodiment of the present disclosure;
FIG. 2 is a cross-sectional view of an LED array according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of an LED array bonding driver chip according to an embodiment of the disclosure;
FIG. 4 is a schematic view of a wafer structure according to an embodiment of the disclosure;
FIG. 5 is a schematic diagram of a wafer structure and photoconductive layer combination according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram of an integrated LED array according to an embodiment of the disclosure.
1, a substrate; 2. a gallium nitride layer; 3. an LED array; 4. a filling layer; 5. a driving chip; 6. a light guiding layer; 7. a reflection part.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the disclosure.
The disclosure provides a preparation method of a Micro LED chip, comprising the following steps:
s1: a substrate 1 is provided, a gallium nitride layer 2 is grown on the substrate 1, and a plurality of LED arrays 3 are periodically prepared by etching on the gallium nitride layer 2.
Specifically, in the present embodiment, providing the substrate 1, growing the gallium nitride layer 2 on the substrate 1, and etching the plurality of LED arrays 3 periodically on the gallium nitride layer 2 includes:
firstly, a growth substrate 1 is provided, a gallium nitride layer 2 is formed on one side surface of the substrate 1, and a plurality of LED arrays 3 are prepared on one side of the gallium nitride layer 2 away from the substrate 1 by etching, wherein the LED arrays 3 are used for emitting light.
S2: a filling layer 4 is provided, the filling layer 4 being flush with the surface of the LED array 3.
Specifically, in the present embodiment, as shown in fig. 1 and 2, the filling layer 4 is filled between the LED arrays 3, the filling layer 4 is formed by a semiconductor process, and includes a metal and a medium between metals, the metal plays a role in conducting, the medium plays a role in isolating and filling, and the filling layer 4 is prepared simultaneously with the LED arrays 3.
S3: a driver chip 5 is provided, and the filler layer 4 and the LED array 3 are bonded to the driver chip 5.
The filling layer 4 and the LED array 3 in this embodiment are bonded with the driving chip 5, respectively, and the Bonding process is completed by Bonding technology.
S4: the substrate 1 and the excess gallium nitride layer 2 are removed, forming a wafer structure comprising the driver chip 5 and the LED array 3.
Further, as shown in fig. 3 and 4, the substrate 1 and the excessive gallium nitride layer 2 away from the driving chip 5 are removed by various techniques in the present embodiment to form a wafer structure including the driving chip 5 and the LED array 3, and at this time, only the LED array 3 and the filling layer 4 are bonded on the driving chip 5.
S5: a photoconductive layer 6 is formed over the wafer structure.
Since the LED array 3 may generate dislocation during formation, so that the arrangement of the LED array 3 is different from the set pixel arrangement, a photoconductive layer 6 is formed on the wafer structure, and the photoconductive layer 6 is used to change the light emitting route of the LED array 3, so that the display position of the changed LED array is the same as the set pixel arrangement.
S6: a plurality of reflecting portions 7 are etched on the light guide layer 6 to integrate the display positions of the LED array 3.
Specifically, in this embodiment, the plurality of reflection portions 7 are etched on the light guiding layer 6, and the light emitting direction of the LED array 3 is changed by the reflection effect of the reflection portions 7, so that the purpose that the display positions of different LED arrays on the whole chip can be arranged according to the pixel arrangement requirement is achieved.
In the present embodiment, the substrate 1 is a sapphire substrate. The gallium nitride layer 2 is grown on a sapphire substrate.
Further, the LED arrays 3 are each disposed at a recessed position of the substrate 1, and a plurality of LED arrays 3 are disposed at the recessed position of each substrate 1. Since the crystal quality of the gallium nitride layer 2 is not uniform at different positions on the sapphire substrate 1, the LED array 3 is usually disposed at a position where the defect is small, and the defect at a recessed position on the sapphire substrate 1 is usually small, so that the LED array 3 is disposed at a recessed region of the substrate 1.
Further, the removal method in step S4 is wet or dry chemical etching, and the sapphire substrate 1 and the excessive gallium nitride layer 2 may be removed in various ways to prepare the LED array 3. Of course, in this embodiment, the preparation process may also use photolithography, nanoimprint, and other modes, and the specific mode of this embodiment is not limited herein, and may be any mode as appropriate.
In the present embodiment, etching the plurality of reflection portions 7 on the light guiding layer 6 includes:
forming a plurality of reflecting parts 7 on the surface of the light guide layer 6 on the side facing away from the LED array 3 by using an etching process;
in this embodiment, a plurality of reflecting portions 7 are disposed to change the light direction of the LED array 3, specifically, a layer of metal may be deposited on the surface of the LED array 3 far from the substrate 1, and then a through hole is prepared on the metal layer, where the position of the through hole may be determined according to the pixel array required, or, in this embodiment, a reflecting portion 7 made of a transparent material may be disposed on the surface of the LED array 3 far from the substrate 1.
In the case of the reflective portion 7 made of a transparent material, it is necessary to form a reflective layer on the side wall of the reflective portion 7 by an etching process, and the light is redirected in the reflective portion 7 by the refraction of the reflective layer.
Specifically, the reflecting portion 7 is a through hole or a cylinder formed on the light guiding layer 6, and the specific shape may be determined not only according to the material of the reflecting portion 7 but also according to the refractive direction of the desired light. As shown in fig. 5, if the reflective portion 7 in the present embodiment is a through hole, the through hole penetrates the light guiding layer 6, and the position of the through hole on the side far away from the driving chip 5 is the position where the pixel array needs to be located, the display position of the LED array 3 is changed by the effect of the through hole of the reflective portion 7, so that the LED array 3 which does not meet the display requirement is integrated into the pixel array which meets the display requirement.
As shown in fig. 5, one end of the reflecting portion 7, which is close to the driving chip 5, extends to the surface of the LED array 3, and one end of the reflecting portion 7, which is far away from the driving chip 5, is a position where the pixel array needs to be located, and one end of the reflecting portion 7, which is close to the driving chip 5, is connected to the surface of the LED array 3, so that light emitted by the LED array 3 is redirected.
In this embodiment, one end of the reflecting portion 7 away from the driving chip 5 is located at the display position of the LED array 3. The LED array 3 refracts or reflects the light emitted from the LED array 3 to the display position by the effect of the reflecting portion 7, so as to adapt to the pixel arrangement requirement of the LED array 3, and form the display position as shown in fig. 6.
In addition, in the present embodiment, the reflective layer is made of metal, and the reflective layer made of metal is disposed on the side wall of the reflective portion 7, specifically, may be made of Al or Ag, so as to prevent light generated by the LED array 3 from being scattered out through the reflective portion 7 made of transparent material, thereby improving the light utilization rate.
The disclosure also provides a Micro LED chip prepared by using the preparation method of the Micro LED chip.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The preparation method of the Micro LED chip is characterized by comprising the following steps of:
s1: providing a substrate (1), growing a gallium nitride layer (2) on the substrate (1), and periodically preparing a plurality of LED arrays (3) on the gallium nitride layer (2) by etching;
s2: -providing a filling layer (4), the filling layer (4) being flush with the surface of the LED array (3);
s3: providing a driving chip (5), wherein the filling layer (4) and the LED array (3) are respectively bonded with the driving chip (5);
s4: removing the substrate (1) and the redundant gallium nitride layer (2) to form a wafer structure comprising a driving chip (5) and an LED array (3);
s5: forming a light guiding layer (6) on the wafer structure;
s6: a plurality of reflecting portions (7) are etched on the light guiding layer (6) to integrate display positions of the LED array (3).
2. The method of manufacturing Micro LED chips according to claim 1, characterized in that the substrate (1) is a sapphire substrate.
3. The method for manufacturing Micro LED chips according to claim 1, wherein the LED arrays (3) are disposed at concave positions of the substrate (1), and a plurality of LED arrays (3) are disposed at concave positions of each substrate (1).
4. The method of manufacturing Micro LED chip according to claim 1, wherein the removing method in step S4 is wet or dry chemical etching.
5. The method of manufacturing a Micro LED chip according to claim 1, wherein etching the plurality of reflective portions (7) on the light guiding layer (6) comprises:
forming a plurality of reflecting parts (7) on the surface of one side of the photoconductive layer (6) facing away from the LED array (3) by using an etching process;
and forming a reflecting layer on the side wall of the reflecting part (7) by using an etching process.
6. The method of manufacturing a Micro LED chip according to claim 1, characterized in that the reflecting part (7) is a through hole or a cylinder formed on the light guiding layer (6).
7. The method of manufacturing Micro LED chips according to claim 1, characterized in that the end of the reflecting portion (7) close to the driving chip (5) extends to the surface of the LED array (3).
8. The method of manufacturing Micro LED chips according to claim 1, characterized in that the end of the reflecting portion (7) remote from the driving chip (5) is located at the display position of the LED array (3).
9. The method of manufacturing a Micro LED chip according to claim 5, wherein the reflective layer is made of metal.
10. A Micro LED chip, characterized in that it is manufactured using the manufacturing method of the Micro LED chip according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310813063.8A CN116544263A (en) | 2023-07-05 | 2023-07-05 | Micro LED chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310813063.8A CN116544263A (en) | 2023-07-05 | 2023-07-05 | Micro LED chip and preparation method thereof |
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| CN116544263A true CN116544263A (en) | 2023-08-04 |
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| CN202310813063.8A Pending CN116544263A (en) | 2023-07-05 | 2023-07-05 | Micro LED chip and preparation method thereof |
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2023
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| CN105765292A (en) * | 2013-11-22 | 2016-07-13 | 株式会社流明斯 | Backlight unit, double cone-shaped reflector, double cone-shaped reflector strip, lighting device, and method for manufacturing double cone-shaped reflector |
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Application publication date: 20230804 |