CN116544107A - Alkaline polishing method for N-type germanium substrate - Google Patents
Alkaline polishing method for N-type germanium substrate Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 42
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 48
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000008367 deionised water Substances 0.000 claims abstract description 41
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims abstract description 28
- 238000001035 drying Methods 0.000 claims abstract description 22
- 238000005406 washing Methods 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000003814 drug Substances 0.000 claims description 15
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 10
- 238000007517 polishing process Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 8
- 238000012797 qualification Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000012545 processing Methods 0.000 description 23
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000001680 brushing effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 6
- 235000017557 sodium bicarbonate Nutrition 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000007688 edging Methods 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses an alkaline polishing method for an N-type germanium substrate, which comprises the following steps of: s1, pasting a film on the back surface of a wafer in a relatively constant environment; s2, performing rough polishing treatment on the wafer by using alkaline rough polishing liquid; s3, cleaning the wafer by sulfuric acid and deionized water, and spin-drying; s4, performing fine polishing treatment on the wafer by using alkaline fine polishing liquid; s5, washing the wafer with deionized water; s6, spin-drying the polished wafer. The method can reduce the consumption of chemicals, and can pertinently improve the qualification rate of polishing and cleaning results and the uniformity of the wafer surface for the germanium N-type semiconductor substrate.
Description
Technical Field
The invention belongs to the technical field of polishing, and particularly relates to an alkaline polishing method for an N-type germanium substrate.
Background
The germanium single crystal wafer is widely used in the aerospace field as an important epitaxial layer substrate material, and the epitaxial growth of the substrate requires extremely low surface roughness, no surface or subsurface damage, residual stress and the like on the surface of the germanium wafer, and the surface defect is removed by polishing the surface of the germanium, so that the surface quality is improved, and the epitaxial growth is satisfied. At present, the wafer polishing in the semiconductor industry generally adopts a chemical-mechanical polishing method, but the production and preparation processes are completely different. In the chemical mechanical polishing process, most important is the configuration of the polishing solution, and the amount of each chemical determines the surface quality of the wafer after polishing.
Disclosure of Invention
The invention aims to solve the technical problem of N-type germanium wafer polishing and provides a polishing method capable of improving uniformity and micro-roughness of the wafer surface.
The invention provides an alkaline polishing method for an N-type germanium substrate, which comprises the following steps of: s1, pasting a film on the back surface of a wafer in a relatively constant environment; s2, performing rough polishing treatment on the wafer by using alkaline rough polishing liquid; s3, cleaning the wafer by sulfuric acid and deionized water, and spin-drying; s4, performing fine polishing treatment on the wafer by using alkaline fine polishing liquid; s5, washing the wafer with deionized water; s6, spin-drying the polished wafer.
Further, in step S1, the back surface of the wafer is coated in a relatively constant environment, the ambient temperature is 15 ℃ to 20 ℃, the humidity is 45% to 65%, and a small amount of alcohol is required to be dipped in a paper rag before the wafer is coated, so that the surface of the wafer coated is lightly rubbed, and the surface of the wafer coated is free from dust and impurities.
Further, in the step S2, the wafer is subjected to rough polishing treatment by using an alkaline rough polishing solution, wherein the alkaline rough polishing solution is prepared from 16000ml to 18000ml of sodium hypochlorite, 3000g to 5000g of sodium bicarbonate, 1500ml to 2000ml of silicon dioxide and 400L of deionized water, the temperature of ionized water is controlled to be 12 to 18 ℃, and the alkaline rough polishing solution is stirred for 15 to 20 minutes; in the rough polishing process, the flow rate of the alkaline polishing solution is required to be 350-450 ml/min, the pressure of the polishing head is gradually increased along with the operation of a machine, and finally 50-70kg is reached, and the rotating speed of the polishing disc is required to be 25-35 r/min.
Further, the step S3 is to clean the wafer with sulfuric acid and deionized water and spin-dry, firstly, the back surface film is peeled off, the wafer is treated with high-purity sulfuric acid for 30 to 60 seconds, and firstly, the wafer is treated with hot sulfuric acid at 75 to 80 ℃ and then treated with normal-temperature sulfuric acid; removing part of organic matters and large particles on the surface of the wafer and gluing the back surface, flushing the chemical liquid on the surface of the wafer with deionized water for 1 to 3 minutes, and finally spin-drying the wafer after rough polishing for 8 to 10 minutes.
Further, the wafer is treated with high purity sulfuric acid for 30 to 40 seconds; rinsing the wafer with deionized water for 2 minutes; the spin-drying time was 8 minutes.
Further, S4, performing fine polishing treatment on the wafer by using alkaline fine polishing liquid, wherein the proportion of the alkaline fine polishing liquid is 800-1200 ml of sodium hypochlorite, 3000-5000 g of sodium bicarbonate, 1000-1600 ml of silicon dioxide and 90L of deionized water, the water temperature of the deionized water is controlled to be 12-18 ℃, and the fine polishing liquid is required to be stirred for 15-20 minutes; in the process of the finish polishing treatment, the flow rate of alkaline finish polishing needs to be 250-350 ml/min, the pressure of a polishing head of polishing equipment needs to be 50-70kg, and the rotating speed of a polishing disc needs to be 25-35 r/min. .
Further, step S5 washes the wafer with deionized water for a period of 1 to 3 minutes, preferably 2 minutes.
Further, the wafer after finish polishing is dried in step S6, the drying time is 8 to 10 minutes, preferably 8 minutes, and the processes of nitrogen filling, drying and the like are also carried out in the drying process, so that the surface of the wafer is ensured to have no obvious liquid medicine, water residues, scratches and unground.
Further, each step S1 to S6 is required to be performed in a ten-thousand-level clean room at 15 to 20 ℃ and humidity of 45 to 65%, and the environmental granularity standard is 0.5um +. 352000.
The alkaline polishing method for the N-type germanium substrate can reduce the consumption of chemicals and pertinently improve the qualification rate of polishing and cleaning results and the uniformity of the wafer surface for the germanium N-type semiconductor substrate. The method also has the advantages of high grinding quantity, easy cleaning and the like.
Drawings
FIG. 1 is a process flow of the polishing liquid of the present invention in a polishing process.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent by the following detailed description of the present invention with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
Example 1
Preparing a sheet to be polished: the N-type germanium thin slice with the thickness of 340+/-5 um is adopted after edging, the roughness is 0.3-0.5um, polishing processing is carried out after back film pasting, the processing quantity of each time of different sizes is different, and each disc of 4-inch slices is processed into 12 slices.
Preparing a rough polishing solution: 400L of deionized water is firstly added into a dispensing container, 3000g of sodium bicarbonate is weighed by an electronic balance, 16000ml of sodium hypochlorite with a cup amount and 1500ml of silicon dioxide are sequentially added into the deionized water, and the mixture is stirred for 15 minutes and then is directly placed into a medicine storage barrel for use, and the effective period is 24 hours. The temperature is generally controlled between 12 and 18 ℃.
The rough polishing method comprises the following steps: and selecting a corresponding ceramic disc according to the required processing thickness, checking whether the wax-free pad on the ceramic disc is intact, washing with deionized water after checking, brushing with a hairbrush for 3-5 times, and placing the wafer prepared by film pasting in the wax-free pad. Polishing is carried out under the conditions that the flow rate of polishing liquid is 450ml/min, the pressure of a polishing head is 50-70kg, and the rotating speed of a polishing disc is 35r/min, and the processing time is 50 minutes.
The cleaning method comprises the following steps: and (3) firstly carrying out film uncovering treatment on the wafer after rough polishing, and then putting the wafer into sulfuric acid for treatment. Firstly, sequentially passing two cups of hot sulfuric acid at 80 ℃ for 30 seconds, then passing normal-temperature sulfuric acid for 30 seconds, and finally, placing the wafer into a deionized water tank for washing for 2 minutes and spin-drying for 8 minutes.
Preparing a fine polishing liquid: firstly, 90L of deionized water is added into a dispensing container, 3000g of sodium bicarbonate is weighed by an electronic balance, 800ml of sodium hypochlorite and 1000ml of silicon dioxide are sequentially added into the deionized water, and the mixture is stirred for 15 minutes and then is put into a medicine storage barrel for direct use, and the effective period is 24 hours. The temperature is generally controlled between 15 and 18 ℃.
The fine polishing method comprises the following steps: and selecting a corresponding ceramic disc according to the required processing thickness, checking whether the wax-free pad on the ceramic disc is intact, washing with deionized water after checking, brushing with a hairbrush for 3-5 times, and placing the wafer prepared by film pasting in the wax-free pad. Polishing is carried out under the conditions of 250ml/min of polishing liquid flow, 50-70kg of polishing head pressure and 25r/min of polishing disk rotation speed, and the processing time is 7 minutes.
And (5) cleaning and spin-drying: and placing the wafer into a cleaning tank for spray cleaning for 2 minutes, and placing the wafer into a spin dryer for spin drying after cleaning is finished for 8 minutes. The wafer surface is ensured to have no obvious liquid medicine, water residue, scratch and unground condition, and the liquid medicine and organic matter residue on the surface are sent to the cleaning and removing condition.
After processing, the wafer surface was uniform and the leveler equipment used was UltraSort, manufactured by united states. The roughness is between 0.1 and 0.2nm. The flatness data are shown in table 1.
| Sequence number | TTV | TIR | Bow | Warp |
| 1 | 3.381 | 3.948 | -0.266 | 4.954 |
| 2 | 4.72 | 4.011 | 1.074 | 4.857 |
| 3 | 3.208 | 4.697 | 1.016 | 3.209 |
| 4 | 2.907 | 4.806 | -0.568 | 6.642 |
| 5 | 4.879 | 3.646 | -2.522 | 6.035 |
| 6 | 1.459 | 4.462 | -1.938 | 4.892 |
| 7 | 4.869 | 1.891 | 0.459 | 5.721 |
| 8 | 2.36 | 3.444 | 0.735 | 3.449 |
| 9 | 3.93 | 2.773 | -1.035 | 4.426 |
| 10 | 3.769 | 2.316 | -1.297 | 3.686 |
TABLE 1
Example 2
Preparing a sheet to be polished: and (3) processing the N-type germanium thin slice with the thickness of 340+/-5 um by adopting edging, wherein the roughness is 0.3-0.5um, and 18 slices are processed per disc.
The back of the wafer is coated under a relatively constant environment, the ambient temperature is 15-20 ℃, the humidity is 45-65%, a small amount of alcohol is needed to be dipped by a paper rag before the wafer is coated, and the surface of the wafer coated is lightly rubbed, so that dust and impurities are not generated on the surface of the coated wafer.
Preparing a rough polishing solution: 400L of deionized water is firstly added into a dispensing container, 5000g of sodium bicarbonate is weighed by an electronic balance, 18000ml of sodium hypochlorite and 2000ml of silicon dioxide are sequentially added into the deionized water, the mixture is stirred for 20 minutes and then is directly used in a medicine storage barrel, the effective period is 24 hours, and the temperature is controlled between 15 ℃ and 18 ℃.
The rough polishing method comprises the following steps: and selecting a corresponding ceramic disc according to the required processing thickness, checking whether the wax-free pad on the ceramic disc is intact, washing with deionized water after checking, brushing with a hairbrush for 3-5 times, and placing the wafer prepared by film pasting in the wax-free pad. Polishing is carried out under the conditions that the flow rate of polishing liquid is 350ml/min, the pressure of a polishing head is 50-60kg, and the rotating speed of a polishing disc is 25r/min, and the processing time is 40 minutes.
The cleaning method comprises the following steps: and (3) firstly carrying out film uncovering treatment on the wafer after rough polishing, and then putting the wafer into sulfuric acid for treatment. Firstly sequentially passing two cups of hot sulfuric acid at 75 ℃ for 30-60 seconds, then passing normal-temperature sulfuric acid for 30-60 seconds, finally placing the wafer into a deionized water tank for washing for 1-3 minutes, and spin-drying for 10 minutes.
Preparing a fine polishing liquid: firstly, 90L of deionized water is added into a dispensing container, 5000g of sodium bicarbonate is weighed by an electronic balance, 1200ml of sodium hypochlorite with a dosage cup and 1600ml of silicon dioxide are sequentially added into the deionized water, and the mixture is stirred for 20 minutes and then is put into a medicine storage barrel for direct use, and the effective period is 24 hours. The temperature is controlled between 15-18 ℃.
The fine polishing method comprises the following steps: and selecting a corresponding ceramic disc according to the required processing thickness, checking whether the wax-free pad on the ceramic disc is intact, washing with deionized water after checking, brushing with a hairbrush for 3-5 times, and placing the wafer prepared by film pasting in the wax-free pad. Polishing is carried out under the conditions that the flow rate of polishing liquid is 350ml/min, the pressure of a polishing head is 30-60kg, and the rotating speed of a polishing disc is 35r/min, and the processing time is 6 minutes.
And (5) cleaning and spin-drying: and placing the wafer into a cleaning tank for spray cleaning for 2 minutes, and placing the wafer into a spin dryer for spin drying after cleaning is completed for 10 minutes. The wafer surface is ensured to have no obvious liquid medicine, water residue, scratch and unground condition, and the liquid medicine and organic matter residue on the surface are sent to the cleaning and removing condition.
After the processing is finished, the surface of the wafer is uniform, and the roughness is between 0.1 and 0.25 nm.
Example 3
Preparing a sheet to be polished: the N-type germanium substrate slice with the thickness of 340+/-5 um is processed by adopting the edging process, the roughness is 0.3-0.6um, and 5 slices are processed per disk. The whole processing process needs to be carried out in a ten-thousand-grade clean room, the temperature is 15-20 ℃, the humidity is 45-65%, and the environmental granularity standard is 0.5 um-352000.
Preparing a rough polishing solution: 400L of deionized water is firstly added into a dispensing container, 4000g of sodium bicarbonate is weighed by an electronic balance, 17000ml of sodium hypochlorite and 1800ml of silicon dioxide are added into the deionized water for a plurality of times, the mixture is stirred for 20 minutes and then is put into a medicine storage barrel for direct use, the effective period is 24 hours, and the temperature is controlled between 12 ℃ and 16 ℃.
The rough polishing method comprises the following steps: and selecting a corresponding ceramic disc according to the required processing thickness, checking whether the wax-free pad on the ceramic disc is intact, washing with deionized water after checking, brushing with a hairbrush for 3-5 times, and placing the wafer prepared by film pasting in the wax-free pad. Polishing is carried out under the conditions that the flow rate of polishing liquid is 400ml/min, the pressure of a polishing head is 50-70kg, and the rotating speed of a polishing disc is 30r/min, and the processing time is 50 minutes.
The cleaning method comprises the following steps: and (3) firstly carrying out film uncovering treatment on the wafer after rough polishing, and then putting the wafer into sulfuric acid for treatment. Firstly sequentially passing two cups of hot sulfuric acid at 80 ℃ for 30-60 seconds, then passing normal-temperature sulfuric acid for 30-60 seconds, finally placing the wafer into a deionized water tank for washing for 2-3 minutes, and spin-drying for 8 minutes.
Preparing a fine polishing liquid: firstly, 90L of deionized water is added into a dispensing container, 4000g of sodium bicarbonate is weighed by an electronic balance, 1000ml of sodium hypochlorite with a dosage cup and 1300ml of silicon dioxide are sequentially added into the deionized water, and the mixture is stirred for 20 minutes and then is put into a medicine storage barrel for direct use, and the effective period is 24 hours. The temperature is controlled between 12-16 ℃.
The fine polishing method comprises the following steps: and selecting a corresponding ceramic disc according to the required processing thickness, checking whether the wax-free pad on the ceramic disc is intact, washing with deionized water after checking, brushing with a hairbrush for 3-5 times, and placing the wafer prepared by film pasting in the wax-free pad. Polishing is carried out under the conditions of polishing fluid flow rate of 300ml/min, polishing head pressure of 50-60kg and polishing disc rotating speed of 30r/min, and processing time is 7 minutes.
And (5) cleaning and spin-drying: and placing the wafer into a cleaning tank for spray cleaning for 2 minutes, and placing the wafer into a spin dryer for spin drying after cleaning is finished for 8 minutes. The wafer surface is ensured to have no obvious liquid medicine, water residue, scratch and unground condition, and the liquid medicine and organic matter residue on the surface are sent to the cleaning and removing condition.
After the processing is finished, the surface of the wafer is uniform, and the roughness is between 0.12 and 0.2nm.
The polishing solution and the polishing method have good grinding quantity on the N-type germanium substrate, can ensure the uniformity of the surface of the wafer, and are beneficial to cleaning. After cleaning, the angle is continuously changed under a special strong light lamp without any chromatic aberration, the surface roughness is observed under a high power microscope, the surface of the wafer is uniform and fine, no liquid medicine exists, and the once qualification rate after cleaning reaches 95%. The process method can also improve the cleaning capability after CMP, synchronously reduce the production cost and improve the working efficiency for polishing and cleaning two links. The qualification rate is improved by 10%, the efficiency is improved by 1.2 times under the same time and the same equipment processing condition, and the cost is reduced by 8%. The roughness of the surface of the substrate is reduced to 0.1-0.2nm from 0.3-04nm of the original processing technology. The former processing time is long, the material consumption is more, the processing time is shortened by 20 minutes from 50 to 60 minutes, the efficiency and the qualification rate are improved, and the environment is protected.
The invention provides a production process of an N-type germanium substrate product in a chemical mechanical polishing process. The process can reduce the consumption of chemicals, and can pertinently improve the qualification rate of polishing and cleaning results and the uniformity of the wafer surface for the germanium N-type semiconductor substrate. The manufacturing process method of the N-type germanium wafer polishing is finally approved through 2 years of production experiments, namely internal and external. The method is characterized in that a set of independently developed production polishing process formula is obtained, and the polishing process comprises a rough polishing process and a fine polishing process. The production equipment is a 50B type single-sided polishing machine which is improved by professional design. In the interaction force environment of chemical and mechanical polishing, the oxidation-reduction process of the wafer surface is continuously repeated, so that the roughness of the wafer surface is continuously improved, the physical structure is more stable, and the polished surface is finer and the surface quality is higher. The wafer polishing surface has stronger water-clearing property, and the subsequent cleaning process is easier and more stable. After polishing, the wafer is rinsed and spin-dried.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.
Claims (9)
1. An alkaline polishing method for an N-type germanium substrate, comprising the steps of:
s1, pasting a film on the back surface of a wafer in a relatively constant environment;
s2, performing rough polishing treatment on the wafer by using alkaline rough polishing liquid;
s3, cleaning the wafer by sulfuric acid and deionized water, and spin-drying;
s4, performing fine polishing treatment on the wafer by using alkaline fine polishing liquid;
s5, washing the wafer with deionized water;
s6, spin-drying the polished wafer.
2. The alkaline polishing method as claimed in claim 1, wherein the step S1 is to apply a film on the back surface of the wafer in a relatively constant environment at 15 to 20 ℃ and a humidity of 45 to 65%, and a small amount of alcohol is dipped in a paper cloth before applying the film on the wafer to lightly wipe the film surface of the wafer.
3. The alkaline polishing method for N-type germanium substrate according to claim 1, wherein in the step S2, the wafer is subjected to rough polishing treatment by using an alkaline rough polishing solution, the alkaline rough polishing solution is prepared from 16000ml to 18000ml of sodium hypochlorite, 3000g to 5000g of sodium bicarbonate, 1500ml to 2000ml of silicon dioxide and 400L of deionized water, the temperature of ionized water is controlled to be 12 to 18 ℃, and the alkaline rough polishing solution is stirred for 15 to 20 minutes; in the rough polishing process, the flow rate of the alkaline polishing solution is required to be 350-450 ml/min, the pressure of the polishing head is gradually increased along with the operation of a machine, and finally 50-70kg is reached, and the rotating speed of the polishing disc is required to be 25-35 r/min.
4. The alkaline polishing method for an N-type germanium substrate according to claim 1, wherein the step S3 is to clean the wafer with sulfuric acid and deionized water and spin-dry, first remove the back film, treat the wafer with high purity sulfuric acid for 30 to 60 seconds, first with 75 to 80 ℃ hot sulfuric acid and then with normal temperature sulfuric acid; and washing the liquid medicine on the surface of the wafer by deionized water for 1 to 3 minutes, and finally spin-drying the wafer after rough polishing for 8 to 10 minutes.
5. The alkaline polishing method for an N-type germanium substrate according to claim 4, wherein the wafer is treated with high-purity sulfuric acid for 30 to 40 seconds; rinsing the wafer with deionized water for 2 minutes; the spin-drying time was 8 minutes.
6. The alkaline polishing method for the N-type germanium substrate according to claim 1, wherein the step S4 is characterized in that an alkaline polishing solution is used for polishing a wafer, the alkaline polishing solution comprises 800-1200 ml of sodium hypochlorite, 3000-5000 g of sodium bicarbonate, 1000-1600 ml of silicon dioxide and 90L of deionized water, the temperature of the deionized water is controlled to be 12-18 ℃, and the polishing solution is stirred for 15-20 minutes; in the process of the finish polishing treatment, the flow rate of alkaline finish polishing needs to be 250-350 ml/min, the pressure of a polishing head of polishing equipment needs to be 50-70kg, and the rotating speed of a polishing disc needs to be 25-35 r/min.
7. The alkaline polishing method for an N-type germanium substrate according to claim 1, wherein the step S5 is to rinse the wafer with deionized water for a period of 1 to 3 minutes.
8. The alkaline polishing method for an N-type germanium substrate according to claim 1, wherein the step S6 spin-dries the polished wafer for 8 to 10 minutes.
9. The alkaline polishing method for N-type germanium substrates according to claim 1, wherein each of the steps S1 to S6 is required to be performed in a ten-thousand clean room at a temperature of 15 to 20 ℃, a humidity of 45 to 65%, and an environmental granularity standard of 0.5 um+. 352000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310428695.2A CN116544107A (en) | 2023-04-20 | 2023-04-20 | Alkaline polishing method for N-type germanium substrate |
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