CN116544092A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN116544092A
CN116544092A CN202310058912.3A CN202310058912A CN116544092A CN 116544092 A CN116544092 A CN 116544092A CN 202310058912 A CN202310058912 A CN 202310058912A CN 116544092 A CN116544092 A CN 116544092A
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China
Prior art keywords
gas
diffusion chamber
substrate
processing apparatus
substrate processing
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CN202310058912.3A
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Chinese (zh)
Inventor
出口新悟
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a processing vessel, a shower head for supplying a first gas and a second gas independently; and a control unit configured to control the showerhead so that a pressure difference between the first gas diffusion chamber and the processing space becomes 47Pa or more, a gas flow rate of each of the first gas supply paths becomes 0.15sccm or more, and a narrow path having a length of 10 or more with respect to a thickness is provided in at least a part of each of the first gas supply paths.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present disclosure relates to a substrate processing apparatus and a substrate processing method.
Background
In patent document 1, a stage in which an object to be processed having a silicon oxide film formed on a surface thereof is placed in a chamber is configured to discharge HF gas and NH gas as reaction gases from a plurality of gas discharge holes of a shower plate provided above the stage so as to correspond to the object to be processed placed on the stage, toward the object to be processed on the stage 3 And (3) gas. And, this is performedThe etching is performed by treating the silicon oxide film on the surface of the non-treated body with a certain gas, and then heating the reaction product generated by the reaction to decompose and remove the reaction product. The shower head of patent document 1 has the following structure: the device comprises a spray plate, HF gas is sprayed from a plurality of first gas spraying holes arranged on the spray plate, and NH gas is sprayed from a plurality of second gas spraying holes arranged on the spray plate 3 And (3) gas.
Prior art literature
Patent literature
Patent document 1: international publication No. 2013-183437
Disclosure of Invention
Problems to be solved by the invention
The technology according to the present disclosure suppresses, in the case of using a showerhead in which gas diffusion chambers of each gas are stacked, that one of two gases supplied from the showerhead to a processing space respectively, from flowing back to the gas diffusion chamber of the other gas in the showerhead, and mixing.
Solution for solving the problem
One aspect of the present disclosure is a substrate processing apparatus that performs processing on a substrate using a first gas and a second gas, the substrate processing apparatus including: a processing container having a processing space for performing the processing on the substrate therein; a showerhead that supplies the first gas and the second gas to the processing space independently; and a control unit configured to have a first gas diffusion chamber for diffusing the first gas and a second gas diffusion chamber for diffusing the second gas in the showerhead, the second gas diffusion chamber being disposed below the first gas diffusion chamber, the showerhead having a plurality of first openings for ejecting the first gas and a plurality of second openings for ejecting the second gas on a lower surface of the showerhead, the showerhead having a plurality of first gas supply paths for communicating the first gas diffusion chamber with the plurality of first openings and a plurality of second gas supply paths for communicating the second gas diffusion chamber with the plurality of second openings, the control unit being configured to control a pressure difference between the first gas diffusion chamber and the processing space to be 47Pa or more, and to set a gas flow rate of each of the plurality of first gas supply paths to be 0.15sccm or more, and to set a narrow aspect ratio of each of the first gas supply paths to be 10 or more in a narrow aspect ratio of the respective first gas supply paths.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present disclosure, when a showerhead in which gas diffusion chambers of each gas are stacked is used, it is possible to suppress one of two gases independently supplied from the showerhead to a processing space from flowing back to the gas diffusion chamber of the other gas in the showerhead and mixing.
Drawings
Fig. 1 is a vertical cross-sectional view schematically showing the configuration of a plasma processing apparatus as a substrate processing apparatus according to the present embodiment.
Fig. 2 is a vertical sectional view schematically showing the structure of the partial window.
Fig. 3 is a bottom view of the first plate.
Fig. 4 is a bottom view of the second plate.
Fig. 5 is a bottom view of the third plate.
Fig. 6 is a diagram for explaining the size of the narrow path of the first gas supply path.
Fig. 7 is a diagram showing simulation results.
Fig. 8 is a diagram showing simulation results.
Fig. 9 is a diagram showing simulation results.
Detailed Description
In a process for manufacturing a Flat Panel Display (FPD) such as a Liquid Crystal Display (LCD), a substrate such as a glass substrate is subjected to processes such as etching and film forming by a substrate processing apparatus.
The substrate processing apparatus includes a processing container for housing a substrate to be processed and a showerhead for supplying a processing gas into a processing space in the processing container.
In a process requiring a plurality of gases, a post-mixing method is often used in which a plurality of gases are supplied from a showerhead and mixed in a process chamber, respectively, without mixing the plurality of gases in the showerhead. For example, the post-mix mode is used in the following cases: the gases used in the treatment are a combustible gas and a combustion-supporting gas, and if the combustible gas and the combustion-supporting gas are mixed in the showerhead, explosion or the like may occur.
In the post-mixing method, a showerhead having a multilayer structure in which one gas diffusion chamber for diffusing one gas in the horizontal direction and the other gas diffusion chamber for diffusing the other gas in the horizontal direction are stacked in the vertical direction may be used as the showerhead. In the showerhead, one discharge hole for discharging one gas in one gas diffusion chamber into the process space and the other discharge hole for discharging the other gas in the other gas diffusion chamber into the process space are provided independently of each other on the lower surface of the showerhead.
However, when a showerhead having a multi-layer structure is used, there is a possibility that one gas ejected from one gas ejection hole into the processing space flows back through the other gas ejection hole to mix with the other gas in the showerhead.
Therefore, in the case of using a showerhead in which gas diffusion chambers of each gas are stacked, the technique according to the present disclosure suppresses one of two gases independently supplied from the showerhead to the processing space from flowing back to the gas diffusion chamber of the other gas in the showerhead and mixing with the other gas.
Next, a substrate processing apparatus and a substrate processing method according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and repetitive description thereof will be omitted.
Plasma processing apparatus 1 >
Fig. 1 is a vertical cross-sectional view schematically showing the configuration of a plasma processing apparatus as a substrate processing apparatus according to the present embodiment.
The plasma processing apparatus 1 of fig. 1 performs processing on a rectangular glass substrate G (hereinafter referred to as "substrate G") as a substrate by using two kinds of processing gases. More specifically, the plasma processing apparatus 1 performs plasma processing using plasma of two processing gases on the substrate G as processing. In the present embodiment, the plasma process performed by the plasma processing apparatus 1 is a film forming process for the FPD. However, the plasma treatment performed by the plasma treatment apparatus 1 may be etching treatment for FPD, ashing treatment, or the like. An electronic device such as a light-emitting element and a driving circuit for the light-emitting element is formed on the substrate G by plasma processing performed by the plasma processing apparatus 1.
The plasma processing apparatus 1 includes a container body 10 having a square tubular shape. The container body 10 is formed of a conductive material, such as aluminum, and the container body 10 is electrically grounded. When a corrosive gas is used for the plasma treatment, a corrosion-resistant coating treatment such as an anodic oxidation treatment is performed on the inner wall surface of the container body 10 in order to improve the corrosion resistance. An opening is formed in the upper surface of the container body 10. The opening is hermetically sealed by a rectangular metal window 20 provided so as to be insulated from the container body 10, specifically, by the metal window 20 and a metal frame 14 described later. The space surrounded by the container body 10 and the metal window 20 is a processing space S1 for performing a process (specifically, a plasma process) on the substrate G, and the space above the metal window 20 is an antenna chamber S2 for disposing a high-frequency antenna (inductively coupled antenna) 80 described later. A loading/unloading port 11 for loading and unloading the substrate G into/from the processing space S1 and a gate valve 12 for opening/closing the loading/unloading port 11 are provided in the side wall of the container body 10.
A substrate support 30 for supporting the substrate G is provided on the lower side of the processing space S1 so as to face the metal window 20. The substrate support portion 30 has a main body portion 31 for placing the substrate G thereon, and the main body portion 31 is provided on the bottom surface of the container main body 10 via a leg portion 32.
The main body 31 is made of a conductive material, such as aluminum. The surface of the body 31 is subjected to a coating process such as an anodic oxidation process or a ceramic sputtering process to increase the emissivity of the surface.
Further, a high-frequency power supply for bias may be connected to the main body 31, if necessary.
An exhaust port 13 is formed in the bottom surface of the container body 10, and an exhaust portion 50 having a vacuum pump or the like is connected to the exhaust port 13. The processing space S1 is depressurized by the exhaust unit 50. The exhaust portion 50 may be provided for each of the plurality of exhaust ports 13, or the exhaust portion 50 may be provided in common for the plurality of exhaust ports 13.
A metal frame 14 is provided on the upper surface side of the side wall of the container body 10, and the metal frame 14 is a rectangular frame body made of a metal material such as aluminum. A sealing member (not shown) for hermetically holding the processing space S1 is provided between the container body 10 and the metal frame 14. The container body 10, the metal frame 14, and the metal window 20 constitute a processing container having a processing space S1 therein.
The metal window 20 is divided into a plurality of partial windows 21, and these partial windows 21 are arranged inside the metal frame 14, and the metal window 20 having a rectangular shape as a whole is configured. The shape of the partial window 21 is not the same in a plan view, and there are, for example, a partial window having a quadrangular shape (for example, a trapezoidal shape) in a plan view and a partial window having a triangular shape in a plan view.
The partial windows 21 are shower heads configured to be capable of simultaneously supplying the first process gas and the second process gas independently to the process space S1. The first process gas is, for example, a flammable gas, in this embodiment SiH 4 And (3) gas. The second process gas is, for example, a combustion-supporting gas (specifically, an oxidizing gas), and is, in the present embodiment, O 2 And (3) gas.
The partial windows 21 adjacent to the metal frame 14 are electrically insulated from the metal frame 14 by the insulating member 22, and the adjacent partial windows 21 are also electrically insulated from each other by the insulating member 22.
An insulating member cover 23 is provided on the insulating member 22 to cover the surface of the insulating member 22 on the side of the processing space S1, so as to protect the insulating member 22.
The partial windows 21 are suspended from the top surface side of the antenna chamber S2 by a holding portion (not shown) and held.
Details of the construction of the partial window 21 will be described later.
Each partial window 21 is connected to a first gas source 61 via a first supply pipe 60. Specifically, the inlet 131 (see fig. 2 described later) of each partial window 21 is connected to the first gas source 61 via the first supply pipe 60. The first supply pipe 60 is provided with a first supply mechanism 62. The first supply mechanism 62 includes an on-off valve 62a and a flow rate adjustment valve 62b, and adjusts the flow rate of the first process gas from the first gas source 61 and supplies the first process gas to the partial window 21.
The partial windows 21 are connected to a second gas source 64 via a second supply pipe 63. Specifically, the inlet 132 (see fig. 2 described later) of each partial window 21 is connected to the second gas source 64 via the second supply pipe 63. The second supply pipe 63 is provided with a second supply mechanism 65. The second supply mechanism 65 includes an on-off valve 65a and a flow rate adjustment valve 65b, and supplies the second process gas from the second gas source 64 to the partial window 21 after adjusting the flow rate.
For convenience of illustration, the first supply pipe 60 and the second supply pipe 63 are connected to only one partial window 21, but the first supply pipe 60 and the second supply pipe 63 are actually connected to each partial window 21.
A top plate 70 is disposed above the metal window 20. The top plate 70 is supported by a side wall 71 provided on the metal frame 14.
The space surrounded by the metal window 20, the side wall portion 71, and the top plate portion 70 forms an antenna chamber S2, and the high-frequency antenna 80 is disposed in the antenna chamber S2 so as to face the partial window 21.
The high-frequency antenna 80 is disposed, for example, so as to be separated from the partial window 21 via a spacer (not shown) formed of an insulating material. The high-frequency antenna 80 is formed in a plurality of, for example, a spiral shape and a concentric shape so as to surround along the surface corresponding to each partial window 21 and along the circumferential direction of the rectangular metal window 20, and forms a multi-loop antenna.
Each high-frequency antenna 80 is connected to a high-frequency power supply 41 as a plasma generating means via a matcher 40. High-frequency power of, for example, 13.56MHz is supplied from the high-frequency power supply 41 to each high-frequency antenna 80 via the matcher 40. Thus, during the plasma processing, an eddy current circulating from the upper surface to the lower surface of the surface of each partial window 21 is induced, and an induced electric field is formed in the processing space S1 by a current flowing to the lower surface of the eddy current. The process gas supplied from the local window 21 is plasmatized in the process space S1 by the induced electric field.
The plasma processing apparatus 1 is provided with a pressure gauge 90 for measuring the pressure in the processing space S1.
The plasma processing apparatus 1 is provided with a control unit U. The control unit U is a computer including a processor such as a CPU, a memory, and the like, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the substrate G performed by the plasma processing apparatus 1. The program may be a program recorded on a computer-readable storage medium and installed from the storage medium to the control unit U. Part or all of the program may be implemented by dedicated hardware (circuit board).
< local Window 21 >)
Fig. 2 is a vertical sectional view schematically showing the structure of the partial window 21. Fig. 3 to 5 are bottom views of first to third plates described later, respectively.
As shown in fig. 2, each partial window 21 has a first gas diffusion chamber 101 and a second gas diffusion chamber 102 inside, and each partial window 21 has a plurality of first openings 111 and a plurality of second openings 112 at a lower end thereof.
The first gas diffusion chamber 101 is used to diffuse a first process gas (SiH in this embodiment 4 Gas) diffuses in the horizontal direction. The second gas diffusion chamber 102 is disposed below the first gas diffusion chamber 101 for supplying a second process gas (O in this embodiment) 2 Gas) diffuses in the horizontal direction. The first openings 111 are used to discharge the first process gas in the first gas diffusion chamber 101 to the process space S1. The second openings 112 are respectively used for the second place in the second gas diffusion chamber 102The process gas is discharged into the process space S1.
Each partial window 21 further has a plurality of first gas supply paths 121 and a plurality of second gas supply paths 122.
The plurality of first gas supply paths 121 communicate the first gas diffusion chamber 101 with the plurality of first openings 111. That is, the first gas supply paths 121 respectively communicate the corresponding first openings 111 with the first gas diffusion chamber 101. The first gas supply paths 121 pass through the second gas diffusion chambers 102, respectively. The first gas supply path 121 is separated from the second gas diffusion chamber 102 by, for example, a wall of a guide pipe 222 described later, so that the second process gas in the second gas diffusion chamber 102 does not mix into the first gas supply path 121 when the first gas supply path 121 passes through the second gas diffusion chamber 102.
In addition, a narrow path 121a (i.e., a portion narrower than other portions in the first gas supply path 121) is formed in at least a portion of each first gas supply path 121.
The plurality of second gas supply paths 122 communicate the second gas diffusion chamber 102 with the plurality of second openings 112. That is, the second gas supply paths 122 communicate the corresponding second openings 112 with the second gas diffusion chamber 102, respectively.
Specifically, the partial window 21 is formed by sequentially overlapping the first plate 201, the second plate 202, and the third plate 203 from top to bottom.
As shown in fig. 2 and 3, a recess 211 is formed in the lower surface of the first plate 201, and the recess 211 is closed by the second plate 202, thereby forming the first gas diffusion chamber 101.
Also, as shown in fig. 2 and 4, a recess 221 is formed in the lower surface of the second plate 202, and the recess 221 is closed by the third plate 203, thereby forming the second gas diffusion chamber 102.
As shown in fig. 2, a first process gas inlet 131 and a second process gas inlet 132 are formed in the upper surface of the first plate 201.
The inlet 131 communicates with the first gas diffusion chamber 101 via the first gas introduction path 141. The first gas introduction passage 141 is formed to extend in the vertical direction and penetrates the first plate 201.
In the example of the figure, the number of the inlets 131 is one, but two or more inlets may be used.
The inlet 132 communicates with the second gas diffusion chamber 102 via a second gas introduction path 142. The second gas introduction path 142 is formed to extend in the vertical direction. In addition, the second gas introduction path 142 is formed to cross the first plate 201 and the second plate 202 and pass through the first gas diffusion chamber 101. A guide pipe 212 is provided in a portion of the second gas introduction path 142 passing through the first gas diffusion chamber 101, and a hollow portion of the guide pipe 212 forms the second gas introduction path 142. Thus, the first process gas in the first gas diffusion chamber 101 is prevented from being mixed into the second gas introduction path 142. The guide pipe 212 is provided to penetrate the first gas diffusion chamber 101 in the vertical direction.
In the example of the figure, the number of the introduction ports 132 and the guide pipes 212 is one, but two or more may be used.
The plurality of first gas supply paths 121 and the plurality of second gas supply paths 122 are also formed to extend in the vertical direction.
The first gas supply paths 121 are formed across the second plate 202 and the third plate 203 and pass through the second gas diffusion chamber 102, respectively. A guide pipe 222 is provided at a portion passing through the second gas diffusion chamber 102 in the first gas supply path 121, and a hollow portion of the guide pipe 222 forms the first gas supply path 121. The guide pipe 222 is provided to penetrate the second gas diffusion chamber 102 in the vertical direction. In the present embodiment, the guide pipe 222 is formed to protrude from the lower surface of the second plate 202, but may be formed to protrude partially or entirely from the upper surface of the third plate 203. In the example of the drawing, the narrow path 121a is formed in the guide pipe 222. However, a part or the whole of the narrow path 121a may be formed outside the guide tube 222.
The second gas supply paths 122 are formed to penetrate the third plate 203, respectively.
As shown in fig. 5, the first openings 111 and the second openings 112 are staggered on the lower surface of the third plate 203.
In addition, the number of guide tubes 212 is less than the number of guide tubes 222. Thus, the first gas diffusion chamber 101 is larger than the second gas diffusion chamber 102. SiH as a first process gas 4 Gas and O as a second process gas 2 The gas is less likely to diffuse because the flow rate of the gas supplied to each partial window 21 during plasma processing is lower than that during plasma processing. However, in the present embodiment, as described above, the first gas diffusion chamber 101 for diffusing the first process gas is larger than the second gas diffusion chamber 102, and therefore, the first process gas can be diffused similarly to the second process gas even if the supply flow rate is low.
For example, the first plate 201 to the third plate 203 are each made of a material (aluminum or the like) which is a nonmagnetic material and has conductivity. In the case of using a corrosive gas as the first process gas, the following portions in contact with the first process gas may be subjected to corrosion-resistant coating such as anodic oxidation treatment to improve corrosion resistance.
That is, the following surfaces may be coated with corrosion resistance.
A surface of the first plate 201 on which the first gas introduction path 141 is formed,
A surface of the first plate 201 and the second plate 202 forming the first gas diffusion chamber 101,
The surfaces of the second plate 202 and the third plate 203 forming the first gas supply path 121,
The lower surface of the third plate 203 on the processing space S1 side. The lower surface of the third plate 203 is also subjected to plasma coating such as coating treatment with ceramics such as yttria to improve plasma resistance.
At least a part of the portion in contact with the first process gas may be made of a stainless steel member.
The second plate 202 is fastened to the first plate 201 by fastening screws (not shown), and the third plate 203 is also fastened to the second plate 202 by fastening screws (not shown).
In addition, O-rings (not shown) for sealing the first process gas and the second process gas are provided at a portion where the first plate 201 and the second plate 202 contact each other and a portion where the second plate 202 and the third plate 203 contact each other.
Fig. 6 is a diagram for explaining the size of the narrow path 121a of the first gas supply path 121.
As described above, the first gas supply path 121 has the narrow path 121a. By increasing the length L1 of the narrow path 121a with respect to the aspect ratio (L1/R1) of the thickness (specifically, the diameter) R1, the second process gas ejected from the second opening 112 can be prevented from flowing back into the first gas diffusion chamber 101 through the first gas supply path 121 including the narrow path 121a. In the present embodiment, the aspect ratio is 10 or more.
In addition, from the viewpoint of an increase in the size of the suppressing device, it is difficult to increase the aspect ratio by adjusting the length L of the narrow path 121a, and therefore the aspect ratio is made to be 10 or more by reducing the diameter R1 of the narrow path 121a.
In the present embodiment, a narrow path 122a is also formed at the lower end of the second gas supply path 122. Regarding the narrow path 122a, the aspect ratio (L2/R2) of the length L2 of the narrow path 122a to the thickness R2 may be 10 or more.
Substrate processing
Next, a substrate processing in the plasma processing apparatus 1 will be described.
First, under the control of the control unit U, the gate valve 12 is opened, and the substrate G is carried into the processing space S1 through the carry-in/out port 11 and placed on the substrate support unit 30. Thereafter, the gate valve 12 is closed.
Subsequently, under the control of the control unit U, siH as a first process gas is simultaneously and individually supplied into the process space S1 from the first opening 111 and the second opening 112 of each partial window 21, respectively 4 Gas and O as a second process gas 2 And (3) gas. The exhaust unit 50 exhausts the processing space S1 to adjust the pressure in the processing space S1 to a desired value.
At this time, the control unit U controls the first supply mechanism 62, the second supply mechanism 65, and the exhaust unit 50 so as to satisfy the following conditions (1) to (3), specifically, based on the measurement result of the pressure gauge 90 or the like.
(1) The pressure difference between the first gas diffusion chamber 101 and the processing space S1 is 47Pa or more.
(2) The gas flow rate of each of the plurality of first gas supply paths 121 is higher than the gas flow rate of each of the plurality of second gas supply paths 122, 122.
(3) The gas flow rate of each of the plurality of first gas supply paths 121 is 0.15sccm or more.
In order to satisfy the above (1), the control unit U controls the first supply mechanism 62, the second supply mechanism 65, and the exhaust unit 50 to satisfy the following condition (4), specifically, to satisfy the following condition (4).
(4) The pressure in the treatment space S1 is 1Pa to 5Pa (preferably 1.3Pa to 4.0 Pa).
Next, under the control of the control unit U, a film formation process is performed on the substrate G as a process. Specifically, under the control of the control unit U, the high-frequency power is supplied from the high-frequency power source 41 to the high-frequency antenna 80, and thereby an induced electric field is generated in the processing space S1 through the metal window 20. As a result, the SiH in the processing space S1 is induced by the induced electric field 4 Gas and O 2 The gas is plasmatized to generate high-density inductively coupled plasma, and an SiO film is formed on the substrate G.
In the formation of the SiO film by the plasma, the control unit U also controls to satisfy the above conditions (1) to (3).
After the film formation is completed, the supply of electric power from the high-frequency power source 41 and the supply of the process gas through the partial window 21 are stopped under the control of the control unit U, and SiH is discharged from the process space S1 by the exhaust unit 50 4 Gas and O 2 And (3) gas. Then, the substrate G is carried out in the reverse order of the carry-in.
Thus, the series of substrate treatments is completed.
< simulation >
The present inventors independently supplied SiH to the processing space S1 from the partial window 21 having the above-described structure 4 Gas and method for producing the sameO 2 O in gas 2 The gas is flowed back to the first gas diffusion chamber 101 in the partial window 21 and is then flowed back to the SiH 4 The ratio of the gas mixture, i.e. O 2 The back diffusion of the gas was simulated. The results are shown in fig. 7 to 9. In the following simulations a to C, the number of the first gas supply paths 121 and the second gas supply paths 122 was one, and the diameter R2 and the length L2 of the narrow path 122a of the second gas supply path 122 were 1mm and 5mm, respectively.
(simulation A)
In simulation A, siH was verified as the first process gas 4 Flow of gas versus O as the second process gas 2 The effect of back diffusion of the gas. In addition, in simulation A, siH was used 4 Gas and O 2 The flow ratio of the gas is fixed to 1:10, the diameter R1 of the narrow path 121a of the first gas supply path 121 was fixed to 0.8mm, the length L1 of the narrow path 121a was fixed to 8mm, and the aspect ratio of the narrow path 121a was fixed to 10.
As shown in FIG. 7, according to simulation A, even SiH 4 Gas and O 2 The flow ratio of the gas is 1:10 is unchanged with SiH 4 The flow rate of the gas becomes high, and the pressure difference between the first gas diffusion chamber 101 and the processing space S1 becomes large. In addition, with SiH 4 The flow rate of the gas becomes high, and the upper layer mixing rate, i.e., O 2 The mixing rate of the gas into the first gas diffusion chamber 101 becomes low. Specifically, if SiH 4 When the flow rate of the gas is 0.2sccm or more, the pressure difference exceeds 46.7Pa, and the upper layer mixing rate is lower than the target value of 2%, whereas SiH is contained 4 When the flow rate of the gas is as low as 0.1sccm, the pressure difference is as low as about 34.5, and the upper layer mixing ratio greatly exceeds 2.0% as the target value.
Furthermore, no matter what SiH 4 How large the flow rate of the gas is, the lower layer mixing rate is SiH 4 The mixing ratio of the gas into the second gas diffusion chamber 102 was 0%.
(simulation B)
In simulation B, the SiH is verified 4 Gas and O 2 The flow ratio of the gas is 1:10 and SiH 4 The flow rate of the gas is lowIf the upper layer mixing ratio is large up to 0.1sccm, it is possible to increase the aspect ratio of the narrow path 121a of the first gas supply path 121 to thereby improve the upper layer mixing ratio. In addition, in simulation B, the length L1 of the narrow path 121a was fixed to 8mm.
As shown in fig. 8, according to the simulation B, by increasing the aspect ratio of the narrow path 121a, the pressure difference between the first gas diffusion chamber 101 and the processing space S1 increases, and the upper layer mixing ratio decreases. Specifically, in the case of the aspect ratio of 27, the upper layer mixing ratio was 1/4.4 as compared with the case of the aspect ratio of 10. This is because, by increasing the aspect ratio, the pressure difference across the narrow path 121a increases. However, the upper layer mixing rate still exceeds 2%.
Further, siH was estimated from the results of simulation a and simulation B 4 The influence of the flow rate of the gas on the upper layer mixing rate is larger than the influence of the aspect ratio of the narrow path 121a on the upper layer mixing rate.
The lower layer mixing ratio was 0% regardless of the aspect ratio of the narrow path 121a.
(simulation C)
Therefore, in simulation C, O is not changed 2 The flow rate of the gas only changes SiH 4 The change in the upper layer mixing rate in the case of the flow rate of the gas was verified. In the simulation C, O 2 The flow rate of the gas was fixed at 1sccm, the diameter R1 of the narrow path 121a of the first gas supply path 121 was fixed at 0.3mm, the length L1 of the narrow path 121a was fixed at 8mm, and the aspect ratio of the narrow path 121a was fixed at 27.
As shown in fig. 9, according to simulation C, by not changing O 2 Flow rate of gas to SiH 4 The flow rate of the gas increases from 0.1sccm to 0.15sccm, the pressure difference between the first gas diffusion chamber 101 and the processing space S1 becomes large, and the upper layer mixing rate is 2.0% or less and also lower than 1.0% as a target value of a higher level, specifically, is reduced to 0.40%.
Further, based on simulation A to simulation C, it is estimated that if SiH 4 The flow rate of the gas is 0.15sccm, and even when the aspect ratio of the narrow path 121a is 10, the first gas diffusion chamber 101 is not less than 47Pa, but the upper layer mixing ratio is about 1.76% (0.4X10.2/2.3) and the target value is 2.0% or less. The estimated value is obtained by comparing the results of the cases where the aspect ratio of simulation B is 10 and 27 with the SiH of simulation C 4 The flow rate of the gas was calculated by comparing the results obtained when the flow rate of the gas was 0.15 sccm.
Furthermore, no matter what SiH 4 The lower layer mixing rate was 0% for the flow rate of the gas.
(other simulations)
In addition, the inventors of the present invention verified that N was used 2 Gas instead of O 2 Gas is used as the second treatment gas and N is added 2 The flow rate of the gas was 3.8sccm, siH was added 4 The aspect ratio of the narrow path 121a when the flow rate of the gas increases to 0.4sccm affects the upper layer mixing rate.
In this simulation, siH 4 Since the flow rate of the gas is considerably large and becomes 0.4sccm, even if the aspect ratio of the narrow path 121a is small, it is predicted that the pressure difference between the first gas diffusion chamber 101 and the processing space S1 is large and the upper layer mixing rate is low. However, according to the simulation result, in the case where the aspect ratio of the narrow path 121a is as small as 5, the upper layer mixing rate is as high as 1.5% although the pressure difference is as large as about 45 Pa. On the other hand, when the aspect ratio of the narrow path 121a is 10, the pressure difference is as high as about 75Pa, and the upper layer mixing rate is as low as 0.04%.
Based on the above simulation results, in the present embodiment, the length L1 of the narrow path 121a of the first gas supply path 121 is controlled so that the aspect ratio of the thickness R1 to the length L1 is 10 or more, the pressure difference between the first gas diffusion chamber 101 and the processing space S1 is 47Pa or more, and the gas amount in each of the plurality of first gas supply paths 121 is 0.15sccm or more. Therefore, the upper layer mixing rate, that is, the second process gas (specifically, O 2 Gas) is mixed into the first gas diffusion chamber 101. That is, the second process gas ejected into the process space S1 can be further suppressed from flowing back in the first gas supply path 121 including the narrow path 121a and mixing into the first gas diffusionA chamber 101. Thus, the generation of a hazard due to the mixing of the first process gas and the second process gas can be suppressed.
< modification >
In the above examples, as the combustion supporting gas for forming the SiO film, O was used 2 A gas, but N may be used 2 O gas, O can also be used 2 Gas and N 2 The mixed gas of O gas is replaced.
The first process gas and the second process gas may be used for film formation of films other than SiO films. For example, the method can be used for forming a SiN film.
The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The above-described embodiments can be omitted, replaced, and modified in various ways without departing from the spirit of the appended claims.
Description of the reference numerals
1: a plasma processing device; 10: a container body; 14: a metal frame; 20: a metal window; 21: a local window; 30: a substrate support section; 101: a first gas diffusion chamber; 102: a second gas diffusion chamber; 111: a first opening; 112: a second opening; 121: a first gas supply path; 121a: a narrow path; 122: a second gas supply path; g: a glass substrate; s1: a processing space; u: and a control unit.

Claims (9)

1. A substrate processing apparatus for processing a substrate using a first gas and a second gas, the substrate processing apparatus comprising:
a processing container having a processing space for performing the processing on the substrate therein;
a showerhead that supplies the first gas and the second gas to the processing space independently; and
the control part is used for controlling the control part to control the control part,
wherein the inside of the spray head is provided with a first gas diffusion chamber for diffusing the first gas and a second gas diffusion chamber for diffusing the second gas, the second gas diffusion chamber is arranged at the lower side of the first gas diffusion chamber,
a plurality of first openings for spraying the first gas and a plurality of second openings for spraying the second gas are arranged on the lower surface of the spray header,
the showerhead has a plurality of first gas supply paths communicating the first gas diffusion chamber with the plurality of first openings and a plurality of second gas supply paths communicating the second gas diffusion chamber with the plurality of second openings,
the control unit controls the pressure difference between the first gas diffusion chamber and the processing space to be 47Pa or more, and the gas flow rate in each of the plurality of first gas supply paths to be 0.15sccm or more,
a narrow path is provided in at least a part of each of the first gas supply paths,
the length of the narrow path has an aspect ratio of 10 or more with respect to the thickness.
2. The substrate processing apparatus according to claim 1, wherein,
has a guide pipe penetrating the second gas diffusion chamber,
the guide pipe forms a part of each of the first gas supply paths.
3. The substrate processing apparatus according to claim 1 or 2, wherein,
either one of the first gas and the second gas is a combustible gas, and the other is a combustion supporting gas.
4. The substrate processing apparatus according to claim 3, wherein,
the first gas is combustible gas, and the second gas is combustion-supporting gas.
5. The substrate processing apparatus according to any one of claims 1 to 4, wherein,
also provided with a plasma generating unit,
a film forming process as the process is performed by using plasma generated from the first gas and the second gas by using the plasma generating unit.
6. A substrate processing method for processing a substrate by using a substrate processing apparatus using a first gas and a second gas,
the substrate processing apparatus includes:
a processing container having a processing space for performing the processing on the substrate therein; and
a showerhead for supplying the first gas and the second gas to the processing space independently,
wherein the inside of the spray head is provided with a first gas diffusion chamber for diffusing the first gas and a second gas diffusion chamber for diffusing the second gas, the second gas diffusion chamber is arranged at the lower side of the first gas diffusion chamber,
a plurality of first openings for spraying the first gas and a plurality of second openings for spraying the second gas are arranged on the lower surface of the spray header,
the showerhead has a plurality of first gas supply paths communicating the first gas diffusion chamber with the plurality of first openings and a plurality of second gas supply paths communicating the second gas diffusion chamber with the plurality of second openings,
a narrow path is provided in at least a part of each of the first gas supply paths,
the length of the narrow path has an aspect ratio of 10 or more with respect to the thickness,
in the substrate processing method, the pressure difference between the first gas diffusion chamber and the processing space is controlled to be 47Pa or more, and the gas flow rate in each of the plurality of first gas supply paths is controlled to be 0.15sccm or more, so that the substrate is processed.
7. The method for processing a substrate according to claim 6, wherein,
either one of the first gas and the second gas is a combustible gas, and the other is a combustion supporting gas.
8. The method for processing a substrate according to claim 7, wherein,
the first gas is combustible gas, and the second gas is combustion-supporting gas.
9. The method for treating a substrate according to any one of claims 6 to 8, wherein,
the substrate processing apparatus further includes a plasma generating unit,
in the substrate processing method, a film forming process as the process is performed by using plasma generated from the first gas and the second gas by using the plasma generating means.
CN202310058912.3A 2022-02-03 2023-01-16 Substrate processing apparatus and substrate processing method Pending CN116544092A (en)

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