CN116543822B - Flash memory test and processing method and system applied to solid state disk - Google Patents

Flash memory test and processing method and system applied to solid state disk Download PDF

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Publication number
CN116543822B
CN116543822B CN202310538929.9A CN202310538929A CN116543822B CN 116543822 B CN116543822 B CN 116543822B CN 202310538929 A CN202310538929 A CN 202310538929A CN 116543822 B CN116543822 B CN 116543822B
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flash memory
unit
operation parameter
parameter index
data
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CN116543822A (en
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王远军
涂晶
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Shenzhen Lingdechuang Technology Co ltd
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Shenzhen Lingdechuang Technology Co ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
    • G11C29/883—Masking faults in memories by using spares or by reconfiguring with partially good memories using a single defective memory device with reduced capacity, e.g. half capacity
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1446—Point-in-time backing up or restoration of persistent data
    • G06F11/1458—Management of the backup or restore process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Abstract

The invention provides a flash memory test and processing method and a flash memory test and processing system applied to a solid state disk. The flash memory testing and processing method comprises the following steps: dividing flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit; judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit; after a data backup transmission channel between a flash memory working unit and a flash memory standby unit is established, carrying out data backup in the flash memory standby unit according to a first data backup proportion; and judging whether the flash memory working unit is replaced by the flash memory standby unit or not according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection. The system comprises modules corresponding to the method steps.

Description

Flash memory test and processing method and system applied to solid state disk
Technical Field
The invention provides a flash memory test and processing method and system applied to a solid state disk, and belongs to the technical field of solid state disk flash memory test.
Background
The solid state disk is a storage device, is a hard disk made of a solid state electronic storage chip array, and consists of a control unit and a storage unit, and is identical to a common hard disk in terms of interface specification, definition, functions and use methods, and is identical to the common hard disk in terms of product appearance and dimension. In the process of detecting the flash memory, if a bad block is detected, the solid state disk generally needs to process the bad block. However, due to the time difference between flash detection and bad block handling, this may result in data not being backed up or transferred in time, resulting in loss or corruption of some or all of the data.
Disclosure of Invention
The invention provides a flash memory test and processing method and a flash memory test and processing system applied to a solid state disk, which are used for solving the problem of data loss caused by time difference between flash memory detection and bad block processing in the prior art, and the adopted technical scheme is as follows:
a flash memory test and processing method applied to a solid state disk comprises the following steps:
dividing flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit;
judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit;
After a data backup transmission channel between a flash memory working unit and a flash memory standby unit is established, carrying out data backup in the flash memory standby unit according to a first data backup proportion;
and judging whether the flash memory working unit is replaced by the flash memory standby unit or not according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection.
Further, determining whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit includes:
in the running process of the solid state disk, periodically checking each flash memory unit in the flash memory working units of the solid state disk to obtain a running parameter index corresponding to each flash memory working unit;
comparing the operation parameter index with a first operation parameter index threshold, and judging that a flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is a first target flash memory unit when the operation parameter index exceeds the first operation parameter index threshold;
selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units as standby units, and establishing a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle;
The operation parameter index and the first operation parameter index threshold value are obtained through the following formula:
wherein E represents an operation parameter index; c (C) 0 Representing the number of error bits corresponding to the flash memory units in each flash memory working unit in the current detection; c represents the number of error bits corresponding to the flash memory unit calibrated as a bad block; p (P) 1 Representing the bit error rate corresponding to the flash memory unit in each flash memory working unit in the current detection; c (C) 2 Representing the number of error bits corresponding to the flash memory unit with the largest number of error bits in the flash memory working unit in the current detection; n represents the number of completed periodic detections; p represents the average value of the bit error rate of the flash memory units contained in the flash memory working unit in the current detection; p (P) max A maximum value representing a bit error rate of a normally operating flash memory cell (i.e., a non-bad block) contained in the flash memory work cell in a current test;
E 0 ＝0.57·P 0
wherein E is 01 Representing a first operating parameter indicator threshold; p (P) 0 Indicating the corresponding bit error rate when the flash memory cell is calibrated to be a bad block; e (E) 0 Representing standard parameter values.
Further, after establishing a data backup transmission channel between the flash memory working unit and the flash memory standby unit, performing data backup in the flash memory standby unit according to a first data backup proportion, including:
Extracting an operation parameter index of a first target flash memory unit, and acquiring a first data backup proportion of the flash memory working unit to an enabled standby unit in the flash memory standby unit according to the operation parameter index of the first target flash memory unit;
controlling the first target flash memory unit to transmit data to the standby unit according to the first data backup proportion;
the standby unit performs backup storage on the data transmitted by the first target flash memory unit;
the first data backup proportion is obtained through the following formula:
wherein Q is 01 Representing the data quantity corresponding to the first data backup proportion; q (Q) 0 Representing the data storage amount of the flash memory units in the flash memory working units.
Further, determining whether to replace the flash memory working unit by the flash memory standby unit according to the operation parameter index corresponding to the flash memory working unit obtained by periodic detection includes:
extracting operation parameter indexes of each flash memory working unit obtained by detecting the flash memory working unit at the end time of the checking period;
when the operation parameter index exceeds a second operation parameter index threshold, judging whether a flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit or not;
If the operation parameter index exceeds the threshold value of the second operation parameter index, the corresponding flash memory working unit is a first target flash memory unit, all data in the flash memory working unit are transmitted to a backup unit, and the backup unit is utilized to replace the flash memory working unit;
and if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit, processing the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold.
Further, processing the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold value comprises:
when the operation parameter index exceeds the second operation parameter index threshold value and the corresponding flash memory working unit is not the first target flash memory unit, establishing data connection between the operation parameter index exceeding the second operation parameter index threshold value and the flash memory unit in the flash memory backup unit, and taking the flash memory unit with the operation parameter index exceeding the second operation parameter index threshold value as the second target flash memory unit;
Setting a second data backup proportion; wherein, the second data backup ratio is obtained by the following formula:
wherein Q is 02 Representing the data quantity corresponding to the second data backup proportion, Q 02 Is 0.8Q at maximum 0 ；E a Representing an operation parameter index obtained in the last detection of the second target flash memory unit; e (E) b Representing an operation parameter index obtained by the second target flash memory unit in the current detection;
transmitting the data in the second target flash memory unit to the flash memory units in the flash memory backup unit according to the data volume corresponding to the second data backup proportion;
judging whether the operation parameter index of the second target flash memory unit exceeds a third operation parameter index threshold value in the regular detection process, and when the operation parameter index of the second target flash memory unit exceeds the third operation parameter index threshold value, replacing the operation parameter index exceeding the second target flash memory unit by utilizing the flash memory unit in the flash memory backup unit;
the second operation parameter index threshold value and the third operation parameter index threshold value are obtained through the following formula:
wherein E is 02 And E is 03 Respectively representing a second operating parameter index threshold value and a third operating parameter index threshold value; c (C) 0z Indicating the total amount of error data of the flash memory working unit in the current detection; c (C) z Indicating the total amount of operation data of the flash memory working unit in the current detection.
A flash memory test and processing system for a solid state disk, the flash memory test and processing system comprising:
the dividing module is used for dividing the flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit;
the channel establishing module is used for judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit;
the backup module is used for carrying out data backup in the flash memory standby unit according to a first data backup proportion after establishing a data backup transmission channel between the flash memory working unit and the flash memory standby unit;
and the replacement module is used for judging whether the flash memory working unit is replaced by the flash memory standby unit or not according to the operation parameter indexes corresponding to the flash memory working unit which are obtained through periodic detection.
Further, the channel establishment module includes:
the system comprises an index acquisition module, a storage module and a storage module, wherein the index acquisition module is used for periodically checking each flash memory unit in flash memory working units of the solid state disk in the running process of the solid state disk to acquire an operation parameter index corresponding to each flash memory working unit;
The first comparison module is used for comparing the operation parameter index with a first operation parameter index threshold, and when the operation parameter index exceeds the first operation parameter index threshold, the flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is judged to be a first target flash memory unit;
the establishing module is used for selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units as standby units, and establishing a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle;
the operation parameter index and the first operation parameter index threshold value are obtained through the following formula:
wherein E represents an operation parameter index; c (C) 0 Representing the number of error bits corresponding to the flash memory units in each flash memory working unit in the current detection; c represents the number of error bits corresponding to the flash memory unit calibrated as a bad block; p (P) 1 Representing the bit error rate corresponding to the flash memory unit in each flash memory working unit in the current detection; c (C) 2 Representing the number of error bits corresponding to the flash memory unit with the largest number of error bits in the flash memory working unit in the current detection; n represents the number of completed periodic detections; p represents the average value of the bit error rate of the flash memory units contained in the flash memory working unit in the current detection; P max A maximum value representing a bit error rate of a normally operating flash memory cell (i.e., a non-bad block) contained in the flash memory work cell in a current test;
E 0 ＝0.57·P 0
wherein E is 01 Representing a first operating parameter indicator threshold; p (P) 0 Indicating the corresponding bit error rate when the flash memory cell is calibrated to be a bad block; e (E) 0 Representing standard parameter values.
Further, the backup module includes:
the first extraction module is used for extracting an operation parameter index of a first target flash memory unit, and acquiring a first data backup proportion of the flash memory working unit to the enabled spare unit in the flash memory spare unit according to the operation parameter index of the first target flash memory unit;
the first data transmission module is used for controlling the first target flash memory unit to transmit data to the standby unit according to the first data backup proportion;
the first backup storage module is used for carrying out backup storage on the data transmitted by the first target flash memory unit by the standby unit;
the first data backup proportion is obtained through the following formula:
wherein Q is 01 Representing the data quantity corresponding to the first data backup proportion; q (Q) 0 Representing the data storage amount of the flash memory units in the flash memory working units.
Further, the replacement module includes:
the second extraction module is used for extracting operation parameter indexes of each flash memory working unit obtained by detecting the flash memory working unit at the end time of the checking period;
the judging module is used for judging whether the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit or not when the operation parameter index exceeds the second operation parameter index threshold;
the first replacing module is used for transmitting all data in the flash memory working unit to the backup unit and replacing the flash memory working unit by utilizing the backup unit if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit;
and the processing module is used for processing the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit.
Further, the processing module includes:
the target determining module is used for establishing data connection between the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold and the flash memory unit in the flash memory backup unit when the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit, and taking the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold as the second target flash memory unit;
The proportion setting module is used for setting a second data backup proportion; wherein, the second data backup ratio is obtained by the following formula:
wherein Q is 02 Representing the data quantity corresponding to the second data backup proportion, Q 02 Is 0.8Q at maximum 0 ；E a Representing the operation of the second target flash memory unit obtained in the last detectionA row parameter index; e (E) b Representing an operation parameter index obtained by the second target flash memory unit in the current detection;
the second backup storage module is used for transmitting the data in the second target flash memory unit to the flash memory units in the flash memory backup unit according to the data quantity corresponding to the second data backup proportion;
the second replacement module is used for judging whether the operation parameter index of the second target flash memory unit exceeds a third operation parameter index threshold in the periodic detection process, and when the operation parameter index of the second target flash memory unit exceeds the third operation parameter index threshold, replacing the operation parameter index exceeding the second target flash memory unit by utilizing the flash memory unit in the flash memory backup unit;
the second operation parameter index threshold value and the third operation parameter index threshold value are obtained through the following formula:
Wherein E is 02 And E is 03 Respectively representing a second operating parameter index threshold value and a third operating parameter index threshold value; c (C) 0z Indicating the total amount of error data of the flash memory working unit in the current detection; c (C) z Indicating the total amount of operation data of the flash memory working unit in the current detection.
The invention has the beneficial effects that:
the invention provides a flash memory test and processing method and a flash memory test and processing system applied to a solid state disk, which are used for dividing spare units aiming at flash memory units of the solid state disk, wherein only flash memory working units are operated in the initial stage of operation of the solid state disk, and the flash memory spare units do not participate in operation; the method can effectively improve screening efficiency and screening accuracy of the flash memory units with poor operation before bad block determination, and can perform data backup processing by improving discovery timeliness of the flash memory units with poor operation.
Drawings
FIG. 1 is a flow chart of a flash memory testing and processing method according to the present invention;
FIG. 2 is a system block diagram of a flash memory testing and processing method according to the present invention.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
The embodiment of the invention provides a flash memory test and processing method applied to a solid state disk, as shown in fig. 1, comprising the following steps:
s1, dividing flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit;
s2, judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit;
s3, after a data backup transmission channel between a flash memory working unit and a flash memory standby unit is established, carrying out data backup in the flash memory standby unit according to a first data backup proportion;
s4, judging whether the flash memory working unit is replaced by the flash memory standby unit or not according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection.
The working principle of the technical scheme is as follows: firstly, dividing flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit; the spare unit division is carried out on the flash memory units of the solid state disk, only the flash memory working units operate in the initial stage of operation of the solid state disk, and the flash memory spare units do not participate in operation. The spare flash memory unit is used for preparing operation data backup and operation replacement for the flash memory unit with poor operation later;
then, judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit; after a data backup transmission channel between a flash memory working unit and a flash memory standby unit is established, carrying out data backup in the flash memory standby unit according to a first data backup proportion; and finally, judging whether the flash memory working unit is replaced by the flash memory standby unit according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection.
The technical scheme has the effects that: the embodiment provides a flash memory test and processing method applied to a solid state disk, which is used for carrying out operation detection on each flash memory unit working in a regular detection mode, and carrying out partial data backup on the flash memory unit with poor performance before determining that the flash memory unit is a bad block by setting a detection comparison principle.
In one embodiment of the present invention, determining whether to establish a data backup transmission channel between a flash memory working unit and a flash memory standby unit using an operation parameter index of the flash memory working unit includes:
s201, in the running process of the solid state disk, periodically checking each flash memory unit in flash memory working units of the solid state disk to obtain an operation parameter index corresponding to each flash memory working unit;
s202, comparing the operation parameter index with a first operation parameter index threshold, and judging that a flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is a first target flash memory unit when the operation parameter index exceeds the first operation parameter index threshold;
s203, selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units as standby units, and establishing a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle;
the operation parameter index and the first operation parameter index threshold value are obtained through the following formula:
wherein E represents an operation parameter index; c (C) 0 Representing the number of error bits corresponding to the flash memory units in each flash memory working unit in the current detection; c represents the number of error bits corresponding to the flash memory unit calibrated as a bad block; p (P) 1 Representing the bit error rate corresponding to the flash memory unit in each flash memory working unit in the current detection; c (C) 2 Representing the number of error bits corresponding to the flash memory unit with the largest number of error bits in the flash memory working unit in the current detection; n represents the number of completed periodic detections; p represents the flash operation in the current testAn average value of bit error rates of flash memory cells included in the cells; p (P) max A maximum value representing a bit error rate of a normally operating flash memory cell (i.e., a non-bad block) contained in the flash memory work cell in a current test;
E 0 ＝0.57·P 0
wherein E is 01 Representing a first operating parameter indicator threshold; p (P) 0 Indicating the corresponding bit error rate when the flash memory cell is calibrated to be a bad block; e (E) 0 Representing standard parameter values.
The working principle of the technical scheme is as follows: firstly, in the running process of a solid state disk, periodically checking each flash memory unit in flash memory working units of the solid state disk, wherein the value range of a time period corresponding to the periodic checking is 10-30 days, or performing targeted setting according to the equipment environment of the actual solid state disk; then, acquiring an operation parameter index corresponding to each flash memory working unit; comparing the operation parameter index with a first operation parameter index threshold, and judging that a flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is a first target flash memory unit when the operation parameter index exceeds the first operation parameter index threshold; and finally, selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units as standby units, and establishing a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle. The first operation parameter index threshold value can be adaptively adjusted according to the actual condition detected regularly.
The technical scheme has the effects that: the operation parameter index obtained by the method can effectively improve the rationality and accuracy of the operation parameter index by comprehensively considering the operation condition of each flash memory unit to perform operation evaluation on the flash memory unit. Meanwhile, the overall running state of the solid state disk is decreased along with the running time length and the using time length, so that the running parameter setting of the flash memory unit by summarizing and combining the comprehensive running states of all the flash memory units for running in the running parameter index setting process can furthest improve the evaluation accuracy and the evaluation rationality of the running parameter index on the actual running state of the flash memory unit.
On the other hand, as the running time length and the using time length of the state hard disk are increased, the running state of the whole running state of the solid state hard disk is decreased along with the time length, so that the unified and invariable threshold value cannot be adopted for index consideration, otherwise, the false evaluation rate of the running state of the flash memory unit is increased, and therefore, the first running parameter index threshold value obtained through the mode can be effectively improved to carry out self-adaptive adjustment along with the actual working condition of the flash memory unit in which the solid state hard disk runs, the setting of the first running parameter index threshold value is adjusted along with the actual state of the solid state hard disk, the rationality of the setting of the first running parameter index threshold value and the matching property of the setting of the first running parameter index threshold value and the actual condition of the flash memory unit are improved, and the screening accuracy of the subsequent flash memory unit can be effectively improved.
In one embodiment of the present invention, after establishing a data backup transmission channel between a flash memory working unit and a flash memory standby unit, performing data backup in the flash memory standby unit according to a first data backup ratio, including:
s301, extracting an operation parameter index of a first target flash memory unit, and acquiring a first data backup proportion of the flash memory working unit to an enabled standby unit in the flash memory standby unit according to the operation parameter index of the first target flash memory unit;
s302, controlling the first target flash memory unit to transmit data to the standby unit according to the first data backup proportion;
s303, the standby unit performs backup storage on the data transmitted by the first target flash memory unit;
the first data backup proportion is obtained through the following formula:
wherein Q is 01 Representing the data quantity corresponding to the first data backup proportion; q (Q) 0 Representing the data storage amount of the flash memory units in the flash memory working units.
The working principle and the effect of the technical scheme are as follows: firstly, extracting an operation parameter index of a first target flash memory unit, and acquiring a first data backup proportion of a flash memory working unit to an enabled standby unit in the flash memory standby unit according to the operation parameter index of the first target flash memory unit; then, the first target flash memory unit is controlled to transmit data to the standby unit according to the first data backup proportion; finally, the standby unit performs backup storage on the data transmitted by the first target flash memory unit; the first target flash memory unit selected in the embodiment is not a bad block, but a flash memory unit with a bad operation state.
Through the mode, the screening and acquiring accuracy of the first target flash memory unit can be effectively improved, and meanwhile, through the setting of the first data backup proportion, the data backup proportion can be set according to the actual running condition of the current flash memory unit, so that the actual running condition of the current data backup proportion is matched with the actual running condition of the flash memory unit. Meanwhile, the problem that the storage space is occupied and the storage burden is increased greatly due to the fact that the backup data is too much is prevented from happening, meanwhile, the data backup quantity is insufficient in a mode, the residual data backup time consumed in the subsequent flash memory unit replacement process is too much, and the problem that the data is lost due to the fact that the data backup is not timely occurs is solved.
According to one embodiment of the invention, determining whether to replace the flash memory working unit by the flash memory standby unit according to the operation parameter index corresponding to the flash memory working unit obtained by periodic detection comprises the following steps:
s401, extracting operation parameter indexes of each flash memory working unit obtained by detecting the flash memory working unit at the end time of the checking period;
S402, when the operation parameter index exceeds a second operation parameter index threshold, judging whether a flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit or not;
s403, if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit, transmitting all data in the flash memory working unit to a backup unit, and replacing the flash memory working unit by using the backup unit;
s404, if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit, processing the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold.
The processing of the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold comprises the following steps:
s4041, when the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit, establishing data connection between the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold and the flash memory unit in the flash memory backup unit, and taking the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold as the second target flash memory unit;
S4042, setting a second data backup proportion; wherein, the second data backup ratio is obtained by the following formula:
wherein Q is 02 Representing the data quantity corresponding to the second data backup proportion, Q 02 Is 0.8Q at maximum 0 ；E a Representing an operation parameter index obtained in the last detection of the second target flash memory unit; e (E) b Representing an operation parameter index obtained by the second target flash memory unit in the current detection;
s4043, transmitting the data in the second target flash memory unit to the flash memory units in the flash memory backup unit according to the data volume corresponding to the second data backup proportion;
s4044, judging whether the operation parameter index of the second target flash memory unit exceeds a third operation parameter index threshold in the periodic detection process, and replacing the operation parameter index exceeding the second target flash memory unit by using the flash memory unit in the flash memory backup unit when the operation parameter index of the second target flash memory unit exceeds the third operation parameter index threshold;
the second operation parameter index threshold value and the third operation parameter index threshold value are obtained through the following formula:
wherein E is 02 And E is 03 Respectively representing a second operating parameter index threshold value and a third operating parameter index threshold value; c (C) 0z Indicating the total amount of error data of the flash memory working unit in the current detection; c (C) z Indicating the total amount of operation data of the flash memory working unit in the current detection.
The working principle and the effect of the technical scheme are as follows: by the method, the operation monitoring efficiency and the timeliness of finding bad operation states of the flash memory unit can be effectively improved. Meanwhile, the problem that the storage space is occupied and the storage burden is increased greatly due to the fact that the backup data is too much is prevented from happening, meanwhile, the data backup quantity is insufficient in a mode, the residual data backup time consumed in the subsequent flash memory unit replacement process is too much, and the problem that the data is lost due to the fact that the data backup is not timely occurs is solved.
On the other hand, as the running time length and the using time length of the solid state disk are increased, the running state of the whole running state of the solid state disk is decreased along with the time length, so that the unified and invariable threshold value cannot be adopted for index consideration, otherwise, the false evaluation rate of the running state of the flash memory unit is increased, the second running parameter index threshold value and the third running parameter index threshold value obtained through the method can be effectively improved, the self-adaptive adjustment of the second running parameter index threshold value and the third running parameter index threshold value along with the actual working condition of the flash memory unit running of the solid state disk can be effectively carried out, the setting of the second running parameter index threshold value and the third running parameter index threshold value along with the actual state of the solid state disk can be adjusted, the rationality of the setting of the second running parameter index threshold value and the third running parameter index threshold value and the matching property with the actual condition of the flash memory working unit are improved, and the screening accuracy of the subsequent flash memory unit can be effectively improved.
The embodiment of the invention provides a flash memory test and processing system applied to a solid state disk, as shown in fig. 2, the flash memory test and processing system comprises:
the dividing module is used for dividing the flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit;
the channel establishing module is used for judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit;
the backup module is used for carrying out data backup in the flash memory standby unit according to a first data backup proportion after establishing a data backup transmission channel between the flash memory working unit and the flash memory standby unit;
and the replacement module is used for judging whether the flash memory working unit is replaced by the flash memory standby unit or not according to the operation parameter indexes corresponding to the flash memory working unit which are obtained through periodic detection.
The working principle of the technical scheme is as follows: firstly, dividing flash memory units in the solid state disk by a dividing module to obtain a flash memory working unit and a flash memory standby unit; the spare unit division is carried out on the flash memory units of the solid state disk, only the flash memory working units operate in the initial stage of operation of the solid state disk, and the flash memory spare units do not participate in operation. The spare flash memory unit is used for preparing operation data backup and operation replacement for the flash memory unit with poor operation later; then, judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit through the channel establishment module; after a data backup transmission channel between a flash memory working unit and a flash memory standby unit is established by adopting a backup module, carrying out data backup in the flash memory standby unit according to a first data backup proportion; and finally, judging whether the flash memory working unit is replaced by the flash memory standby unit or not by using the replacement module according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection.
The technical scheme has the effects that: the embodiment provides a flash memory test and processing system applied to a solid state disk, which performs operation detection on each flash memory unit which works in a regular detection mode, performs partial data backup on flash memory units with poor performance before determining that the flash memory units are bad blocks by setting a detection comparison principle, can effectively improve screening efficiency and screening accuracy of the flash memory units with poor operation before determining the bad blocks, and performs data backup processing by improving discovery timeliness of the flash memory units with poor operation.
In one embodiment of the present invention, the channel establishment module includes:
the system comprises an index acquisition module, a storage module and a storage module, wherein the index acquisition module is used for periodically checking each flash memory unit in flash memory working units of the solid state disk in the running process of the solid state disk to acquire an operation parameter index corresponding to each flash memory working unit;
The first comparison module is used for comparing the operation parameter index with a first operation parameter index threshold, and when the operation parameter index exceeds the first operation parameter index threshold, the flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is judged to be a first target flash memory unit;
the establishing module is used for selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units as standby units, and establishing a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle;
the operation parameter index and the first operation parameter index threshold value are obtained through the following formula:
wherein E represents an operation parameter index; c (C) 0 Representing the number of error bits corresponding to the flash memory units in each flash memory working unit in the current detection; c represents the number of error bits corresponding to the flash memory unit calibrated as a bad block; p (P) 1 Representing the bit error rate corresponding to the flash memory unit in each flash memory working unit in the current detection; c (C) 2 Representing the number of error bits corresponding to the flash memory unit with the largest number of error bits in the flash memory working unit in the current detection; n represents the completed periodic inspection Measuring times; p represents the average value of the bit error rate of the flash memory units contained in the flash memory working unit in the current detection; p (P) max A maximum value representing a bit error rate of a normally operating flash memory cell (i.e., a non-bad block) contained in the flash memory work cell in a current test;
E 0 ＝0.57·P 0
wherein E is 01 Representing a first operating parameter indicator threshold; p (P) 0 Indicating the corresponding bit error rate when the flash memory cell is calibrated to be a bad block; e (E) 0 Representing standard parameter values.
The working principle of the technical scheme is as follows: firstly, periodically checking each flash memory unit in flash memory working units of a solid state disk through an index acquisition module in the running process of the solid state disk to acquire an operation parameter index corresponding to each flash memory working unit; then, comparing the operation parameter index with a first operation parameter index threshold by using a first comparison module, and judging that a flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is a first target flash memory unit when the operation parameter index exceeds the first operation parameter index threshold; finally, selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units by adopting a building module as standby units, and building a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle;
The technical scheme has the effects that: the operation parameter index obtained by the method can effectively improve the rationality and accuracy of the operation parameter index by comprehensively considering the operation condition of each flash memory unit to perform operation evaluation on the flash memory unit. Meanwhile, the overall running state of the solid state disk is decreased along with the running time length and the using time length, so that the running parameter setting of the flash memory unit by summarizing and combining the comprehensive running states of all the flash memory units for running in the running parameter index setting process can furthest improve the evaluation accuracy and the evaluation rationality of the running parameter index on the actual running state of the flash memory unit.
On the other hand, as the running time length and the using time length of the state hard disk are increased, the running state of the whole running state of the solid state hard disk is decreased along with the time length, so that the unified and invariable threshold value cannot be adopted for index consideration, otherwise, the false evaluation rate of the running state of the flash memory unit is increased, and therefore, the first running parameter index threshold value obtained through the mode can be effectively improved to carry out self-adaptive adjustment along with the actual working condition of the flash memory unit in which the solid state hard disk runs, the setting of the first running parameter index threshold value is adjusted along with the actual state of the solid state hard disk, the rationality of the setting of the first running parameter index threshold value and the matching property of the setting of the first running parameter index threshold value and the actual condition of the flash memory unit are improved, and the screening accuracy of the subsequent flash memory unit can be effectively improved.
In one embodiment of the present invention, the backup module includes:
the first extraction module is used for extracting an operation parameter index of a first target flash memory unit, and acquiring a first data backup proportion of the flash memory working unit to the enabled spare unit in the flash memory spare unit according to the operation parameter index of the first target flash memory unit;
the first data transmission module is used for controlling the first target flash memory unit to transmit data to the standby unit according to the first data backup proportion;
the first backup storage module is used for carrying out backup storage on the data transmitted by the first target flash memory unit by the standby unit;
the first data backup proportion is obtained through the following formula:
wherein Q is 01 Representing the data quantity corresponding to the first data backup proportion; q (Q) 0 Representing the data storage amount of the flash memory units in the flash memory working units.
The working principle and the effect of the technical scheme are as follows: firstly, extracting an operation parameter index of a first target flash memory unit through a first extraction module, and acquiring a first data backup proportion of a flash memory working unit to an enabled standby unit in the flash memory standby unit according to the operation parameter index of the first target flash memory unit; then, a first data transmission module is utilized to control the first target flash memory unit to transmit data to the standby unit according to the first data backup proportion; and finally, controlling the standby unit to carry out backup storage on the data transmitted by the first target flash memory unit by adopting a first backup storage module.
Through the mode, the screening and acquiring accuracy of the first target flash memory unit can be effectively improved, and meanwhile, through the setting of the first data backup proportion, the data backup proportion can be set according to the actual running condition of the current flash memory unit, so that the actual running condition of the current data backup proportion is matched with the actual running condition of the flash memory unit. Meanwhile, the problem that the storage space is occupied and the storage burden is increased greatly due to the fact that the backup data is too much is prevented from happening, meanwhile, the data backup quantity is insufficient in a mode, the residual data backup time consumed in the subsequent flash memory unit replacement process is too much, and the problem that the data is lost due to the fact that the data backup is not timely occurs is solved.
In one embodiment of the invention, the replacement module comprises:
the second extraction module is used for extracting operation parameter indexes of each flash memory working unit obtained by detecting the flash memory working unit at the end time of the checking period;
the judging module is used for judging whether the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit or not when the operation parameter index exceeds the second operation parameter index threshold;
The first replacing module is used for transmitting all data in the flash memory working unit to the backup unit and replacing the flash memory working unit by utilizing the backup unit if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit;
and the processing module is used for processing the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit.
Wherein the processing module comprises:
the target determining module is used for establishing data connection between the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold and the flash memory unit in the flash memory backup unit when the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit, and taking the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold as the second target flash memory unit;
the proportion setting module is used for setting a second data backup proportion; wherein, the second data backup ratio is obtained by the following formula:
Wherein Q is 02 Representing the data quantity corresponding to the second data backup proportion, Q 02 Is 0.8Q at maximum 0 ；E a Representing an operation parameter index obtained in the last detection of the second target flash memory unit; e (E) b Representing an operation parameter index obtained by the second target flash memory unit in the current detection;
the second backup storage module is used for transmitting the data in the second target flash memory unit to the flash memory units in the flash memory backup unit according to the data quantity corresponding to the second data backup proportion;
the second replacement module is used for judging whether the operation parameter index of the second target flash memory unit exceeds a third operation parameter index threshold in the periodic detection process, and when the operation parameter index of the second target flash memory unit exceeds the third operation parameter index threshold, replacing the operation parameter index exceeding the second target flash memory unit by utilizing the flash memory unit in the flash memory backup unit;
the second operation parameter index threshold value and the third operation parameter index threshold value are obtained through the following formula:
wherein E is 02 And E is 03 Respectively representing a second operating parameter index threshold value and a third operating parameter index threshold value; c (C) 0z Indicating the total amount of error data of the flash memory working unit in the current detection; c (C) z Indicating the total amount of operation data of the flash memory working unit in the current detection.
The working principle and the effect of the technical scheme are as follows: by the method, the operation monitoring efficiency and the timeliness of finding bad operation states of the flash memory unit can be effectively improved. Meanwhile, the problem that the storage space is occupied and the storage burden is increased greatly due to the fact that the backup data is too much is prevented from happening, meanwhile, the data backup quantity is insufficient in a mode, the residual data backup time consumed in the subsequent flash memory unit replacement process is too much, and the problem that the data is lost due to the fact that the data backup is not timely occurs is solved.
On the other hand, as the running time length and the using time length of the solid state disk are increased, the running state of the whole running state of the solid state disk is decreased along with the time length, so that the unified and invariable threshold value cannot be adopted for index consideration, otherwise, the false evaluation rate of the running state of the flash memory unit is increased, the second running parameter index threshold value and the third running parameter index threshold value obtained through the method can be effectively improved, the self-adaptive adjustment of the second running parameter index threshold value and the third running parameter index threshold value along with the actual working condition of the flash memory unit running of the solid state disk can be effectively carried out, the setting of the second running parameter index threshold value and the third running parameter index threshold value along with the actual state of the solid state disk can be adjusted, the rationality of the setting of the second running parameter index threshold value and the third running parameter index threshold value and the matching property with the actual condition of the flash memory working unit are improved, and the screening accuracy of the subsequent flash memory unit can be effectively improved.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (2)

1. The flash memory testing and processing method applied to the solid state disk is characterized by comprising the following steps of:
dividing flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit;
judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit;
after a data backup transmission channel between a flash memory working unit and a flash memory standby unit is established, carrying out data backup in the flash memory standby unit according to a first data backup proportion;
judging whether the flash memory working unit is replaced by the flash memory standby unit or not according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection;
after establishing a data backup transmission channel between a flash memory working unit and a flash memory standby unit, carrying out data backup in the flash memory standby unit according to a first data backup proportion, wherein the method comprises the following steps:
Extracting an operation parameter index of a first target flash memory unit, and acquiring a first data backup proportion of the flash memory working unit to an enabled standby unit in the flash memory standby unit according to the operation parameter index of the first target flash memory unit;
controlling the first target flash memory unit to transmit data to the standby unit according to the first data backup proportion;
the standby unit performs backup storage on the data transmitted by the first target flash memory unit;
the first data backup proportion is obtained through the following formula:
wherein Q is 01 Representing the data quantity corresponding to the first data backup proportion; q (Q) 0 Representing the data storage amount of the flash memory units in the flash memory working units;
determining whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit comprises the following steps:
in the running process of the solid state disk, periodically checking each flash memory unit in the flash memory working units of the solid state disk to obtain a running parameter index corresponding to each flash memory working unit;
comparing the operation parameter index with a first operation parameter index threshold, and judging that a flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is a first target flash memory unit when the operation parameter index exceeds the first operation parameter index threshold;
Selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units as standby units, and establishing a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle;
the operation parameter index and the first operation parameter index threshold value are obtained through the following formula:
wherein E represents an operation parameter index; c (C) 0 Representing the number of error bits corresponding to the flash memory units in each flash memory working unit in the current detection; c represents the number of error bits corresponding to the flash memory unit calibrated as a bad block; p (P) 1 Representing the bit error rate corresponding to the flash memory unit in each flash memory working unit in the current detection; c (C) 2 Representing the number of error bits corresponding to the flash memory unit with the largest number of error bits in the flash memory working unit in the current detection; n represents the number of completed periodic detections; p represents the average value of the bit error rate of the flash memory units contained in the flash memory working unit in the current detection; p (P) max Representing the maximum value of the bit error rate of the flash memory unit which is contained in the flash memory working unit and is normally operated in the current detection;
E 0 ＝0.57·P 0
Wherein E is 01 Indicating a first operating parameter indicator thresholdA value; p (P) 0 Indicating the corresponding bit error rate when the flash memory cell is calibrated to be a bad block; e (E) 0 Representing standard parameter values;
determining whether to replace the flash memory working unit by using the flash memory standby unit according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection comprises the following steps:
extracting operation parameter indexes of each flash memory working unit obtained by detecting the flash memory working unit at the end time of the checking period;
when the operation parameter index exceeds a second operation parameter index threshold, judging whether a flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit or not;
if the operation parameter index exceeds the threshold value of the second operation parameter index, the corresponding flash memory working unit is a first target flash memory unit, all data in the flash memory working unit are transmitted to a backup unit, and the backup unit is utilized to replace the flash memory working unit;
if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit, processing the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold;
Processing the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold value, including:
when the operation parameter index exceeds the second operation parameter index threshold value and the corresponding flash memory working unit is not the first target flash memory unit, establishing data connection between the operation parameter index exceeding the second operation parameter index threshold value and the flash memory unit in the flash memory backup unit, and taking the flash memory unit with the operation parameter index exceeding the second operation parameter index threshold value as the second target flash memory unit;
setting a second data backup proportion; wherein, the second data backup ratio is obtained by the following formula:
wherein Q is 02 Representing the data quantity corresponding to the second data backup proportion, Q 02 Is 0.8Q at maximum 0 ；E a Representing an operation parameter index obtained in the last detection of the second target flash memory unit; e (E) b Representing an operation parameter index obtained by the second target flash memory unit in the current detection;
transmitting the data in the second target flash memory unit to the flash memory units in the flash memory backup unit according to the data volume corresponding to the second data backup proportion;
Judging whether the operation parameter index of the second target flash memory unit exceeds a third operation parameter index threshold value in the regular detection process, and when the operation parameter index of the second target flash memory unit exceeds the third operation parameter index threshold value, replacing the operation parameter index exceeding the second target flash memory unit by utilizing the flash memory unit in the flash memory backup unit;
the second operation parameter index threshold value and the third operation parameter index threshold value are obtained through the following formula:
wherein E is 02 And E is 03 Respectively representing a second operating parameter index threshold value and a third operating parameter index threshold value; c (C) 0z Indicating the total amount of error data of the flash memory working unit in the current detection; c (C) z Indicating the total amount of operation data of the flash memory working unit in the current detection.
2. The flash memory test and processing system applied to the solid state disk is characterized by comprising:
the dividing module is used for dividing the flash memory units in the solid state disk to obtain a flash memory working unit and a flash memory standby unit;
the channel establishing module is used for judging whether to establish a data backup transmission channel between the flash memory working unit and the flash memory standby unit by using the operation parameter index of the flash memory working unit;
The backup module is used for carrying out data backup in the flash memory standby unit according to a first data backup proportion after establishing a data backup transmission channel between the flash memory working unit and the flash memory standby unit;
the replacement module is used for judging whether the flash memory working unit is replaced by the flash memory standby unit or not according to the operation parameter index corresponding to the flash memory working unit obtained through periodic detection;
the backup module comprises:
the first extraction module is used for extracting an operation parameter index of a first target flash memory unit, and acquiring a first data backup proportion of the flash memory working unit to the enabled spare unit in the flash memory spare unit according to the operation parameter index of the first target flash memory unit;
the first data transmission module is used for controlling the first target flash memory unit to transmit data to the standby unit according to the first data backup proportion;
the first backup storage module is used for carrying out backup storage on the data transmitted by the first target flash memory unit by the standby unit;
the first data backup proportion is obtained through the following formula:
wherein Q is 01 Representing the data quantity corresponding to the first data backup proportion; q (Q) 0 Data representing flash memory cells in the flash memory work cellsAn amount of memory;
the channel establishment module includes:
the system comprises an index acquisition module, a storage module and a storage module, wherein the index acquisition module is used for periodically checking each flash memory unit in flash memory working units of the solid state disk in the running process of the solid state disk to acquire an operation parameter index corresponding to each flash memory working unit;
the first comparison module is used for comparing the operation parameter index with a first operation parameter index threshold, and when the operation parameter index exceeds the first operation parameter index threshold, the flash memory unit corresponding to the operation parameter index exceeding the first operation parameter index threshold is judged to be a first target flash memory unit;
the establishing module is used for selecting flash memory units with the same number as the first target flash memory units from the flash memory standby units as standby units, and establishing a data backup transmission channel between the first target flash memory units and the standby units according to a one-to-one correspondence principle;
the operation parameter index and the first operation parameter index threshold value are obtained through the following formula:
wherein E represents an operation parameter index; c (C) 0 Representing the number of error bits corresponding to the flash memory units in each flash memory working unit in the current detection; c represents the number of error bits corresponding to the flash memory unit calibrated as a bad block; p (P) 1 Representing the bit error rate corresponding to the flash memory unit in each flash memory working unit in the current detection; c (C) 2 Representing the number of error bits corresponding to the flash memory unit with the largest number of error bits in the flash memory working unit in the current detection; n represents the number of completed periodic detections; p represents the average value of the bit error rate of the flash memory units contained in the flash memory working unit in the current detection; p (P) max Representing the maximum value of the bit error rate of the flash memory unit which is contained in the flash memory working unit and is normally operated in the current detection;
E 0 ＝0.57·P 0
wherein E is 01 Representing a first operating parameter indicator threshold; p (P) 0 Indicating the corresponding bit error rate when the flash memory cell is calibrated to be a bad block; e (E) 0 Representing standard parameter values;
the replacement module includes:
the second extraction module is used for extracting operation parameter indexes of each flash memory working unit obtained by detecting the flash memory working unit at the end time of the checking period;
the judging module is used for judging whether the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit or not when the operation parameter index exceeds the second operation parameter index threshold;
The first replacing module is used for transmitting all data in the flash memory working unit to the backup unit and replacing the flash memory working unit by utilizing the backup unit if the flash memory working unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is a first target flash memory unit;
the processing module is used for processing the flash memory working units corresponding to the operation parameter indexes exceeding the second operation parameter index threshold value if the flash memory working units corresponding to the operation parameter indexes exceeding the second operation parameter index threshold value are not the first target flash memory units;
the processing module comprises:
the target determining module is used for establishing data connection between the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold and the flash memory unit in the flash memory backup unit when the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold is not the first target flash memory unit, and taking the flash memory unit corresponding to the operation parameter index exceeding the second operation parameter index threshold as the second target flash memory unit;
the proportion setting module is used for setting a second data backup proportion; wherein, the second data backup ratio is obtained by the following formula:
Wherein Q is 02 Representing the data quantity corresponding to the second data backup proportion, Q 02 Is 0.8Q at maximum 0 ；E a Representing an operation parameter index obtained in the last detection of the second target flash memory unit; e (E) b Representing an operation parameter index obtained by the second target flash memory unit in the current detection;
the second backup storage module is used for transmitting the data in the second target flash memory unit to the flash memory units in the flash memory backup unit according to the data quantity corresponding to the second data backup proportion;
the second replacement module is used for judging whether the operation parameter index of the second target flash memory unit exceeds a third operation parameter index threshold in the periodic detection process, and when the operation parameter index of the second target flash memory unit exceeds the third operation parameter index threshold, replacing the operation parameter index exceeding the second target flash memory unit by utilizing the flash memory unit in the flash memory backup unit;
the second operation parameter index threshold value and the third operation parameter index threshold value are obtained through the following formula:
wherein E is 02 And E is 03 Respectively representing a second operating parameter index threshold value and a third operating parameter index threshold value; c (C) 0z Indicating the total amount of error data of the flash memory working unit in the current detection; c (C) z Indicating the total amount of operation data of the flash memory working unit in the current detection.
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