CN116540356A - Optical chip integrating lithium niobate thin film and quantum light source and preparation method thereof - Google Patents
Optical chip integrating lithium niobate thin film and quantum light source and preparation method thereof Download PDFInfo
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- CN116540356A CN116540356A CN202310307872.1A CN202310307872A CN116540356A CN 116540356 A CN116540356 A CN 116540356A CN 202310307872 A CN202310307872 A CN 202310307872A CN 116540356 A CN116540356 A CN 116540356A
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims abstract description 19
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000002096 quantum dot Substances 0.000 claims abstract description 7
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention discloses a light chip integrating a lithium niobate thin film and a quantum light source and a preparation method thereof, wherein the preparation method comprises the following steps: s1: monocrystalline LiNbO on LNOI wafer under protection of photoresist 3 Etching the film layer to obtain LiNbO 3 An optical waveguide; s2: under the protection of photoresist, an InP nano-beam heat-insulating cone is prepared on an InP wafer, inAs quantum dots are embedded in the InP nano-beam heat-insulating cone, and the tail of the InP nano-beam heat-insulating cone is a Bragg reflection structure formed by a through hole array; s3: the InP nanometer beam heat insulation cone is cut off from the substrate by focusing the ion beam FIB method, and the InP nanometer beam heat insulation cone is absorbed and transferred by the nanometer needle, and the InP nanometer beam heat insulation cone is connected with LiNbO by intermolecular force 3 And (5) bonding the optical waveguides. The preparation method of the invention can efficiently transmit single photons emitted into the nano beam to the lithium niobate waveguide through the design of the InP nano beam adiabatic taper, thereby solving the problems of the prior artThe problem that a thin film lithium niobate optical chip lacks a single photon emitter is solved.
Description
Technical Field
The invention belongs to the technical field of photonic chips, and particularly relates to a photonic chip integrated with a lithium niobate thin film and a quantum light source and a preparation method thereof.
Background
Lithium niobate is one of the most widely used photoelectric materials, has superior electro-optical characteristics, can effectively convert an electronic signal into an optical signal, and is widely used in today's optical communication systems. Lithium niobate is also known as "optical silicon" in the optoelectronic age, analogous to the role of silicon in microelectronics. Lithium niobate waveguides have a relatively high linear electro-optic coefficient, and are the most mature materials currently demonstrated to realize wideband high-linearity modulators. Unlike general semiconductor materials, lithium niobate does not need to modulate light by an electroabsorption effect, can directly change the intensity of light by an electro-optical effect, and does not cause disturbance to the phase of light. Furthermore, lithium niobate has a large nonlinear coefficient and can be used for generating light with a new frequency or amplifying light energy with other frequencies.
In addition, the advantages of the lithium niobate material in physical properties are very obvious. First, the curie temperature of the lithium niobate material is as high as 1200 ℃, which can keep excellent electro-optical properties after a high temperature annealing process. And secondly, the light transparent window range of the lithium niobate material is 340 nm-4.6 mu m, so that the visible light to mid-infrared spectrum is effectively covered, and the dispersion effect is small. At the same time, the absorption loss of the lithium niobate material at a wavelength of 1.06 μm is very low (< 0.15%/cm).
From the application aspect, the thin film lithium niobate is an ideal material substrate for quantum photonics, because the thin film lithium niobate can tightly limit light in a small waveguide, has a strong electro-optic effect, can switch and modulate single photons at low power and high speed, and can be applied to the scenes of quantum simulators, quantum computers and the like.
However, the lack of a high-efficiency single photon emitter in lithium niobate is critical to a scalable quantum photon circuit, namely, the lack of a single photon emitter in a thin film lithium niobate optical chip, which is a technical problem to be solved.
Disclosure of Invention
The invention aims at: in order to overcome the problems in the prior art, the invention discloses an optical chip integrating a lithium niobate thin film and a quantum light source and a preparation method thereof.
On the one hand, the aim of the invention is achieved by the following technical scheme:
the preparation method of the optical chip integrating the lithium niobate thin film and the quantum light source comprises the following steps:
s1: monocrystalline LiNbO on LNOI wafer under protection of photoresist 3 Etching the film layer to obtain LiNbO 3 An optical waveguide;
s2: under the protection of photoresist, an InP nano-beam heat-insulating cone is prepared on an InP wafer, inAs quantum dots are embedded in the InP nano-beam heat-insulating cone, and the tail of the InP nano-beam heat-insulating cone is a Bragg reflection structure formed by a through hole array;
s3: the InP nanometer beam heat insulation cone is cut off from the substrate by focusing the ion beam FIB method, and the InP nanometer beam heat insulation cone is absorbed and transferred by the nanometer needle, and the InP nanometer beam heat insulation cone is connected with LiNbO by intermolecular force 3 And (5) bonding the optical waveguides.
According to a preferred embodiment, in step S3, inP nano-beams are thermally insulated with LiNbO 3 The coupling angle of the light waves is 5-7 deg..
According to a preferred embodiment, the LNOI wafer comprises a Si substrate, siO 2 Dielectric layer and single crystal LiNbO 3 A thin film layer, wherein the SiO 2 The thickness of the dielectric layer is 2-3 mu m, and the single crystal LiNbO 3 The thickness of the thin film layer is 300-350nm.
According to a preferred embodiment, the LiNbO obtained in step S1 3 The height of the optical waveguide is 300-350nm, and the width is 1200nm.
According to a preferred embodiment, the InP wafer comprises, in order from the low end to the top end: the InAs quantum dot layer is arranged between the first InP film layer and the second InP film layer.
According to a preferred embodiment, in step S2, the AlInAs sacrificial layer is removed by wet etching, so as to obtain a suspended InP nano-beam adiabatic taper.
According to a preferred embodiment, the etching solution used in the wet etching in step S2 is:
H 2 O:HCl:H 2 O 2 ＝3:1:1。
according to a preferred embodiment, the thicknesses of the first InP thin film layer and the second InP thin film layer are 140nm, respectively; the prepared InP nano-beam heat-insulating cone has the width of 500nm, the thickness of 280nm and the length of 5 mu m.
According to a preferred embodiment, the apertures of the three through holes near the tail end direction in the InP nano-beam adiabatic cone tail through hole array are respectively 250nm, 270nm and 290nm, and the spacing between the hole edges is: 100nm.
In another aspect, the invention also discloses:
an optical chip integrating a lithium niobate thin film and a quantum light source comprises an InP nano-beam adiabatic taper and LiNbO 3 An optical waveguide, wherein the InP nano-beam heat-insulating cone is attached to LiNbO 3 Over the optical waveguide; and the optical chip is prepared by the preparation method.
The foregoing inventive concepts and various further alternatives thereof may be freely combined to form multiple concepts, all of which are contemplated and claimed herein. Various combinations will be apparent to those skilled in the art from a review of the present disclosure, and are not intended to be exhaustive or all of the present disclosure.
The invention has the beneficial effects that:
according to the preparation method of the optical chip integrating the lithium niobate thin film and the quantum light source, the InP nano-beam adiabatic cone is integrated with the lithium niobate photonic chip by means of precise combination through intermolecular force, a single-photon emitter is introduced into the lithium niobate photonic chip, the problem that the lithium niobate photonic chip lacks a light source is solved, the light source is guaranteed to propagate along a single direction through the design of a tail Bragg reflection structure, and the coupling efficiency is improved.
Drawings
FIG. 1 is a schematic illustration of a process for preparing a photo chip of the present invention incorporating a lithium niobate thin film and a quantum light source;
fig. 2 is a schematic structural view of an optical chip according to the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal," "vertical," "overhang," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, in the present invention, if a specific structure, connection relationship, position relationship, power source relationship, etc. are not specifically written, the structure, connection relationship, position relationship, power source relationship, etc. related to the present invention can be known by those skilled in the art without any creative effort.
Example 1:
referring to fig. 1 to 2, there is shown a method of manufacturing a photo chip integrated with a lithium niobate thin film and a quantum light source, the method of manufacturing a photo chip integrated with a lithium niobate thin film and a quantum light source including the following steps.
Step S1: monocrystalline LiNbO on LNOI wafer under protection of photoresist 3 Etching the film layer to obtain LiNbO 3 An optical waveguide.
Preferably, the LNOI wafer comprises a Si substrate, a SiO 2 Dielectric layer and single crystal LiNbO 3 A thin film layer, wherein the SiO 2 The thickness of the dielectric layer is 2-3 mu m, and the single crystal LiNbO 3 The thickness of the thin film layer is 300-350nm.
Further, liNbO obtained in step S1 3 The height of the optical waveguide is 300-350nm, and the width is 1200nm.
Step S2: under the protection of photoresist, an InP nano-beam heat-insulating cone is prepared on an InP wafer, inAs quantum dots are embedded in the InP nano-beam heat-insulating cone, and the tail of the InP nano-beam heat-insulating cone is a Bragg reflection structure formed by a through hole array.
Preferably, the InP wafer sequentially includes, from a low end to a top end: an InP substrate, an InP/InAlAs buffer layer, an AlInAs sacrificial layer, a first InP thin film layer, and a second InP thin film layer. And an InAs quantum dot layer is clamped between the first InP film layer and the second InP film layer, so that InAs quantum dots are embedded in the InP nano-beam heat insulation cone. Each structural layer was grown by MBE.
Further, an InP/InAlAs buffer layer with a thickness of 240nm; alInAs sacrificial layer with thickness of 2-3 μm. The thicknesses of the first InP thin film layer and the second InP thin film layer are 140nm, respectively. The prepared InP nano-beam heat-insulating cone has the width of 500nm, the thickness of 280nm and the length of 5 mu m.
Preferably, in step S2, the AlInAs sacrificial layer is removed by a wet etching method, so as to obtain a suspended InP nano-beam adiabatic taper. The etching liquid adopted in the wet etching in the step S2 is as follows:
H 2 O:HCl:H 2 O 2 ＝3:1:1。
preferably, the apertures of the three through holes near the tail end direction in the InP nano-beam adiabatic cone tail through hole array are 250nm, 270nm and 290nm respectively, and the spacing between the hole edges is: 100nm.
Step S3: the InP nanometer beam heat insulation cone is cut off from the substrate by focusing the ion beam FIB method, and the InP nanometer beam heat insulation cone is absorbed and transferred by the nanometer needle, and the InP nanometer beam heat insulation cone is connected with LiNbO by intermolecular force 3 And (5) bonding the optical waveguides.
Preferably, in step S3, inP nano-beams are thermally insulated with LiNbO 3 The coupling angle of the light waves is 5-7 deg..
According to the preparation method of the optical chip integrating the lithium niobate thin film and the quantum light source, the InP nano-beam adiabatic cone is integrated with the lithium niobate photonic chip by means of precise combination through intermolecular force, a single-photon emitter is introduced into the lithium niobate photonic chip, the problem that the lithium niobate photonic chip lacks a light source is solved, the light source is guaranteed to propagate along a single direction through the design of a tail Bragg reflection structure, and the coupling efficiency is improved.
Example 2
In the examples1, the embodiment discloses a light chip integrating a lithium niobate thin film and a quantum light source. The optical chip comprises an InP nano-beam heat-insulating cone and LiNbO 3 An optical waveguide, wherein the InP nano-beam heat-insulating cone is attached to LiNbO 3 Over the optical waveguide. And the optical chip was manufactured by the manufacturing method of the foregoing example 1.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. The preparation method of the optical chip integrating the lithium niobate thin film and the quantum light source is characterized by comprising the following steps of:
s1: monocrystalline LiNbO on LNOI wafer under protection of photoresist 3 Etching the film layer to obtain LiNbO 3 An optical waveguide;
s2: under the protection of photoresist, an InP nano-beam heat-insulating cone is prepared on an InP wafer, inAs quantum dots are embedded in the InP nano-beam heat-insulating cone, and the tail of the InP nano-beam heat-insulating cone is a Bragg reflection structure formed by a through hole array;
s3: the InP nanometer beam heat insulation cone is cut off from the substrate by focusing the ion beam FIB method, and the InP nanometer beam heat insulation cone is absorbed and transferred by the nanometer needle, and the InP nanometer beam heat insulation cone is connected with LiNbO by intermolecular force 3 And (5) bonding the optical waveguides.
2. The method for fabricating a photonic chip integrating a lithium niobate thin film and a quantum light source according to claim 1, wherein in step S3, inP nanobeam adiabatic taper and LiNbO 3 The coupling angle of the light waves is 5-7 deg..
3. The method for manufacturing a photo chip integrating a lithium niobate thin film and a quantum light source according to claim 1, wherein the LNOI wafer comprises a Si substrate, a SiO 2 Dielectric layerAnd single crystal LiNbO 3 A thin film layer, wherein the SiO 2 The thickness of the dielectric layer is 2-3 mu m, and the single crystal LiNbO 3 The thickness of the thin film layer is 300-350nm.
4. The method for manufacturing a photo chip integrating a lithium niobate thin film and a quantum light source according to claim 3, wherein LiNbO obtained in step S1 3 The height of the optical waveguide is 300-350nm, and the width is 1200nm.
5. The method for manufacturing a light chip integrated with a lithium niobate thin film and a quantum light source according to claim 1, wherein the InP wafer sequentially comprises, from a low end to a top end: the InAs quantum dot layer is arranged between the first InP film layer and the second InP film layer.
6. The method for fabricating a photonic chip integrated with a lithium niobate thin film and a quantum light source according to claim 5, wherein in step S2, the AlInAs sacrificial layer is removed by wet etching, thereby obtaining a suspended InP nano-beam adiabatic taper.
7. The method for manufacturing a photo chip integrated with a lithium niobate thin film and a quantum light source according to claim 6, wherein the etching solution used for wet etching in step S2 is: h 2 O:HCl:H 2 O 2 ＝3:1:1。
8. The method of fabricating a light chip integrated with a lithium niobate thin film and a quantum light source according to claim 6, wherein the thickness of the first InP thin film layer and the second InP thin film layer is 140nm, respectively;
the prepared InP nano-beam heat-insulating cone has the width of 500nm, the thickness of 280nm and the length of 5 mu m.
9. The method for preparing the optical chip integrated with the lithium niobate thin film and the quantum light source according to claim 6, wherein the aperture of the three through holes near the tail end direction in the InP nano-beam adiabatic taper tail through hole array is 250nm, 270nm and 290nm respectively, and the distance between the edges of each hole is: 100nm.
10. A light chip integrating a lithium niobate thin film and a quantum light source is characterized in that the light chip comprises an InP nano-beam heat insulation cone and LiNbO 3 An optical waveguide, wherein the InP nano-beam heat-insulating cone is attached to LiNbO 3 Over the optical waveguide; and the optical chip is manufactured by the manufacturing method according to any one of claims 1 to 9.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129920A (en) * | 2019-12-30 | 2020-05-08 | 上海交通大学 | Preparation method of distributed Bragg reflection laser based on erbium-doped lithium niobate thin film |
| US20200363693A1 (en) * | 2019-05-17 | 2020-11-19 | Shanghai Jiao Tong University | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof |
| GB202116361D0 (en) * | 2019-09-13 | 2021-12-29 | Univ Sheffield | Single photon sources |
| CN114039273A (en) * | 2021-10-31 | 2022-02-11 | 南京中电芯谷高频器件产业技术研究院有限公司 | InP-based laser and thin-film lithium niobate optical waveguide heterogeneous integrated structure |
| US20220381979A1 (en) * | 2019-09-13 | 2022-12-01 | The University Of Sheffield | Single photon sources |
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- 2023-03-27 CN CN202310307872.1A patent/CN116540356B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200363693A1 (en) * | 2019-05-17 | 2020-11-19 | Shanghai Jiao Tong University | Silicon-based lithium niobate film electro-optic modulator array and integration method thereof |
| GB202116361D0 (en) * | 2019-09-13 | 2021-12-29 | Univ Sheffield | Single photon sources |
| US20220381979A1 (en) * | 2019-09-13 | 2022-12-01 | The University Of Sheffield | Single photon sources |
| CN111129920A (en) * | 2019-12-30 | 2020-05-08 | 上海交通大学 | Preparation method of distributed Bragg reflection laser based on erbium-doped lithium niobate thin film |
| CN114039273A (en) * | 2021-10-31 | 2022-02-11 | 南京中电芯谷高频器件产业技术研究院有限公司 | InP-based laser and thin-film lithium niobate optical waveguide heterogeneous integrated structure |
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