CN116533133A - Grinding method, grinding control system and grinding system - Google Patents

Grinding method, grinding control system and grinding system Download PDF

Info

Publication number
CN116533133A
CN116533133A CN202310826828.1A CN202310826828A CN116533133A CN 116533133 A CN116533133 A CN 116533133A CN 202310826828 A CN202310826828 A CN 202310826828A CN 116533133 A CN116533133 A CN 116533133A
Authority
CN
China
Prior art keywords
polishing
grinding
platform
layer
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202310826828.1A
Other languages
Chinese (zh)
Other versions
CN116533133B (en
Inventor
金文祥
周启航
李阿龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nexchip Semiconductor Corp
Original Assignee
Nexchip Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexchip Semiconductor Corp filed Critical Nexchip Semiconductor Corp
Priority to CN202310826828.1A priority Critical patent/CN116533133B/en
Publication of CN116533133A publication Critical patent/CN116533133A/en
Application granted granted Critical
Publication of CN116533133B publication Critical patent/CN116533133B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The application relates to a polishing method, a polishing control system and a polishing system. The grinding method comprises the following steps: acquiring the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground; acquiring the grinding removal rate of the third grinding platform to-be-ground layer; obtaining target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate and the polishing removal rate of the third polishing platform to be polished; and sequentially polishing the layer to be polished by using a first polishing platform, a second polishing platform and a third polishing platform, wherein the polishing time of the first polishing platform, the polishing time of the second polishing platform and the polishing time of the third polishing platform are all target polishing times. According to the polishing method, the time control of the first polishing platform, the second polishing platform and the third polishing platform for polishing the layer to be polished can be improved, the third polishing platform can be effectively prevented from over-polishing the layer to be polished, and accordingly the yield of products is improved.

Description

Grinding method, grinding control system and grinding system
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a polishing method, a polishing control system, and a polishing system.
Background
Chemical mechanical polishing (Chemical Mechanical Polishing, CMP) is a very important process in existing semiconductor processes. A chemical mechanical polishing method comprises the following steps: sequentially grinding the layer to be ground by using a first grinding platform, a second grinding platform and a third grinding platform; wherein, the polishing time of the first polishing platform and the second polishing platform is fixed time, and the polishing end point of the third polishing platform is detected by adopting an end point detection (Endpoint Detection, EPD) technology in the polishing process.
In the chemical mechanical polishing method, the polishing time of the first polishing platform and the polishing time of the second polishing platform are often estimated through manual experience, and if the estimation is inaccurate, the polishing is easily caused when the end point detection fails in the polishing process of the third polishing platform, so that a larger yield risk exists.
Disclosure of Invention
Accordingly, it is desirable to provide a polishing method, a polishing control system, and a polishing system capable of avoiding overgrinding of a layer to be polished, thereby ensuring a product yield.
In a first aspect, the present application provides a method of grinding. The grinding method comprises the following steps:
acquiring the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground;
acquiring the grinding removal rate of the third grinding platform on the layer to be ground;
obtaining target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate and the polishing removal rate of the third polishing platform on the layer to be polished;
and sequentially polishing the layer to be polished by using the first polishing platform, the second polishing platform and the third polishing platform, wherein the polishing time of the first polishing platform, the polishing time of the second polishing platform and the polishing time of the third polishing platform are all the target polishing time.
In one embodiment, the obtaining the overall polishing removal rate of the layer to be polished by the first polishing platen and the second polishing platen includes:
providing a test wafer, wherein the test wafer comprises a layer to be removed, and the layer to be removed and the layer to be ground are formed by adopting the same process;
measuring the total thickness of the layer to be removed;
grinding the layer to be removed by using the first grinding platform, and recording the grinding time of the first grinding platform;
grinding the layer to be removed after grinding by using the second grinding platform, and recording the grinding time of the second grinding platform;
measuring the first thickness of the layer to be removed remained after the second grinding platform is ground;
and obtaining the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground based on the first thickness, the total thickness of the layer to be removed, the grinding time of the first grinding platform and the grinding time of the second grinding platform.
In one embodiment, the obtaining the polishing removal rate of the layer to be polished by the third polishing platform includes:
grinding the layer to be removed after the second platform grinding by using the third grinding platform, and recording the grinding time of the third grinding platform;
measuring the second thickness of the layer to be removed remained after the third grinding platform is ground;
and obtaining the grinding removal rate of the third grinding platform on the layer to be ground based on the second thickness, the first thickness and the grinding time of the third grinding platform.
In one embodiment, before the measuring the first thickness of the layer to be removed, which remains after the second polishing platform is polished, the method further includes: cleaning and drying the test wafer polished by the second polishing platform;
before the measuring the second thickness of the layer to be removed, which remains after the third polishing platform is polished, the method further comprises: and cleaning and drying the test wafer polished by the third polishing platform.
In one embodiment, the obtaining the target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate, and the polishing removal rate of the third polishing platform on the layer to be polished includes: the target grinding time is obtained based on the following formula:；
wherein PT is the target polishing time, amount is the total polishing removal Amount, V1 is the overall polishing removal rate, and V2 is the polishing removal rate of the third polishing platform on the layer to be polished.
In one embodiment, the providing a test wafer includes:
and providing the same batch of wafers, wherein the same batch of wafers comprise the test wafer and a plurality of wafers to be ground, and the wafers to be ground comprise the layers to be ground.
In one embodiment, the test wafer and the wafer to be polished each comprise:
a substrate, wherein a shallow trench is formed in the substrate;
the patterned mask layer is positioned on the upper surface of the substrate; an opening is formed in the patterned mask layer, the opening is arranged corresponding to the shallow trench, and the opening is communicated with the shallow trench;
the dielectric layer is filled in the shallow trench and the opening and covers the upper surface of the patterned mask layer; the dielectric layer positioned on the upper surface of the patterned mask layer is the layer to be removed or the layer to be ground.
In a second aspect, the present application further provides a polishing control system, where the polishing control system is configured to control a polishing platform to polish a layer to be polished, and the polishing platform includes a first polishing platform, a second polishing platform, and a third polishing platform; the polishing control system includes:
the processing system is used for acquiring the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground and the grinding removal rate of the third grinding platform to the layer to be ground, and obtaining target grinding time based on the total grinding removal amount of the layer to be ground, the overall grinding removal rate and the grinding removal rate of the third grinding platform to the layer to be ground;
the control system is connected with the processing system and the grinding machine table and is used for controlling the first grinding platform, the second grinding platform and the third grinding platform to grind the layer to be ground in sequence based on the target grinding time, and the grinding time of the first grinding platform, the grinding time of the second grinding platform and the grinding time of the third grinding platform are all the target grinding time.
In one embodiment, the processing system includes:
the measuring machine is used for measuring the total thickness of the layer to be removed in the test wafer, the first thickness of the layer to be removed reserved after the second grinding platform is ground and the second thickness of the layer to be removed reserved after the third grinding platform is ground; the layer to be removed and the layer to be ground are formed by adopting the same process;
the processing device is used for recording the polishing time of the first polishing platform, the polishing time of the second polishing platform and the polishing time of the third polishing platform, obtaining the overall polishing removal rate of the first polishing platform and the second polishing platform to the layer to be polished based on the first thickness, the total thickness of the layer to be removed, the polishing time of the first polishing platform and the polishing time of the second polishing platform, obtaining the polishing removal rate of the third polishing platform to the layer to be polished based on the second thickness, the first thickness and the polishing time of the third polishing platform, and obtaining the target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate and the polishing removal rate of the third polishing platform to the layer to be polished.
In a third aspect, the present application also provides a polishing system comprising:
the grinding machine comprises a first grinding platform, a second grinding platform and a third grinding platform;
the polishing control system as described in the second aspect.
The grinding method, the grinding control system and the grinding system have the unexpected effects that: the first grinding platform, the second grinding platform and the third grinding platform are sequentially ground on the layer to be ground by adopting the same grinding time (namely the target grinding time), so that the time control of the first grinding platform, the second grinding platform and the third grinding platform on the layer to be ground can be improved, the overgrinding of the third grinding platform on the layer to be ground can be effectively avoided, and the yield of products is improved.
Drawings
FIG. 1 is a partial top view of a grinding mill;
FIG. 2 is a flow chart of a polishing method in one embodiment;
FIG. 3 is a flowchart of step S10 in the polishing method according to one embodiment;
FIG. 4 is a flowchart of step S11 in the polishing method according to one embodiment;
FIG. 5 is a schematic cross-sectional view of a polishing method according to one embodiment between polishing dielectric layers of a test wafer;
FIG. 6 is a schematic cross-sectional view of a polishing method according to one embodiment between polishing a dielectric layer of a test wafer using a first polishing platen and a second polishing platen;
FIG. 7 is a schematic cross-sectional view illustrating a polishing method according to an embodiment between polishing a dielectric layer of a test wafer using a third polishing platen;
fig. 8 is a schematic view of a polishing system in another embodiment.
Reference numerals illustrate:
1. a grinder station; 10. a first polishing platen; 101. a first polishing head; 11. a second polishing platen; 111. a second polishing head; 12. a third polishing platen; 121. a third polishing head; 13. a conversion platform; 14. an end point detection device; 20. a substrate; 21. a bottom dielectric layer; 22. a shallow trench; 23. patterning the mask layer; 231. an opening; 24. a dielectric layer; 25. a first doped region; 26. a second doped region; 3. a grinding control system; 31. a processing system; 311. measuring a machine; 312. a processing device; 313. a cleaning device; 32. and a control system.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
Chemical mechanical polishing (Chemical Mechanical Polishing, CMP) is a very important process in existing semiconductor processes. The chemical mechanical polishing method is performed based on the polishing apparatus 1 as shown in fig. 1, and the polishing apparatus 1 may specifically include a first polishing platen 10, a second polishing platen 11, a third polishing platen 12, and a conversion platen 13 arranged in an array, where the first polishing platen 10 is provided with a first polishing head 101 to perform corresponding polishing, the second polishing platen 11 is provided with a second polishing head 111 to perform corresponding polishing, and the third polishing platen 12 is provided with a third polishing head 121 to perform corresponding polishing; the chemical mechanical polishing method may specifically include the following steps: sequentially polishing the layer to be polished by using a first polishing platen 10, a second polishing platen 11 and a third polishing platen 12; wherein, the polishing time of the first polishing platform 10 and the second polishing platform 11 is a fixed time, and the polishing end point of the third polishing platform 12 is detected by the end point detecting device 14 during the polishing process.
In the chemical mechanical polishing method, the polishing time of the first polishing platen 10 and the polishing time of the second polishing platen 11 are often estimated through manual experience, and if there is an inaccurate estimation, the end point detection device 14 is prone to over-polishing when there is an end point detection failure in the polishing process of the third polishing platen 12, so that there is a high yield risk.
In one embodiment, referring to fig. 2, a polishing method is provided, the polishing method comprising the steps of:
s10: acquiring the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground;
s11: acquiring the grinding removal rate of the third grinding platform to-be-ground layer;
s12: obtaining target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate and the polishing removal rate of the third polishing platform to be polished;
s13: and sequentially polishing the layer to be polished by using a first polishing platform, a second polishing platform and a third polishing platform, wherein the polishing time of the first polishing platform, the polishing time of the second polishing platform and the polishing time of the third polishing platform are all target polishing times.
The grinding method of the present application has the following unexpected effects: the first grinding platform, the second grinding platform and the third grinding platform are sequentially ground on the layer to be ground by adopting the same grinding time (namely the target grinding time), so that the time control of the first grinding platform, the second grinding platform and the third grinding platform on the layer to be ground can be improved, the overgrinding of the third grinding platform on the layer to be ground can be effectively avoided, and the yield of products is improved.
It should be noted that the polishing method in this embodiment may be performed by the polishing machine 1 shown in fig. 1.
It should be further noted that the polishing method in this embodiment may be performed based on a polishing machine with the endpoint detection device 14 removed from the polishing machine 1 in fig. 1.
In step S10, please refer to step S10 in fig. 2 and fig. 5 to 6 in conjunction with fig. 1, an overall polishing removal rate of the layer to be polished by the first polishing platen 10 and the second polishing platen 11 is obtained.
As an example, referring to fig. 3 in conjunction with fig. 1 to 2, in step S10, obtaining the overall polishing removal rate of the first polishing platen 10 and the second polishing platen 11 for the layer to be polished may include:
s101: providing a test wafer, wherein the test wafer comprises a layer to be removed, and the layer to be removed and the layer to be ground are formed by adopting the same process;
s102: measuring the total thickness of the layer to be removed;
s103: polishing the layer to be removed by using the first polishing platform 10, and recording the polishing time of the first polishing platform 10;
s104: grinding the layer to be removed after grinding by using the second grinding platform 11, and recording the grinding time of the second grinding platform 11;
s105: measuring the first thickness of the layer to be removed remained after the second grinding platform 11 is ground;
s106: based on the first thickness, the total thickness of the layer to be removed, the polishing time of the first polishing platform 10 and the polishing time of the second polishing platform 11, the overall removal rate of the layer to be removed by the first polishing platform 10 and the second polishing platform 11 is obtained, namely the overall polishing removal rate of the layer to be polished by the first polishing platform 10 and the second polishing platform 11.
As an example, in step S101, providing the test wafer may include:
the method comprises the steps of providing the same batch of wafers, wherein the same batch of wafers comprise a test wafer and a plurality of wafers to be polished, and the wafers to be polished comprise layers to be polished.
Specifically, the wafers in the same batch may be product wafers, the test wafer may be the first wafer to be polished in the batch of wafers, and the other product wafers are wafers to be polished; of course, in other examples, the same lot of wafers may also include a baffle and a product wafer, the test wafer may be a baffle, and the wafer to be polished may be a product wafer.
As an example, the same lot of wafers may include 25 wafers.
As an example, referring to fig. 5, the structures of the test wafer and the wafer to be polished may be the same, and may include:
a substrate 20, a shallow trench 22 being formed in the substrate 20;
a patterned mask layer 23, the patterned mask layer 23 being located on the upper surface of the substrate 20; the patterned mask layer 23 is provided with an opening 231, the opening 231 is arranged corresponding to the shallow trench 22, and the opening 231 is communicated with the shallow trench 22;
the dielectric layer 24, the dielectric layer 24 fills in the shallow trench 22 and the opening 231 and covers the upper surface of the patterned mask layer 23; the dielectric layer 24 on the upper surface of the patterned mask layer 23 is the layer to be removed.
As an example, in step S102, the measured total thickness of the removed layer is the total thickness D1 of the dielectric layer 24 on the upper surface of the patterned mask layer 23 as shown in fig. 5.
In step S105, the second polishing platform 11 is used to polish the layer to be removed (i.e. the dielectric layer 24 on the upper surface of the patterned mask layer 23, if the wafer is a wafer to be polished, the dielectric layer 24 on the upper surface of the patterned mask layer 23 is the layer to be polished), and the total thickness of the dielectric layer 24 removed after polishing by the first polishing platform 10 and the second polishing platform 11 obtained after measurement is the value of account 1 shown in fig. 6, and the remaining thickness of the dielectric layer 24 on the upper surface of the patterned mask layer 23 is the first thickness D2. At this time, the thickness amount1 of the removed dielectric layer 24 is the difference between the total thickness D1 of the dielectric layer 24 on the upper surface of the patterned mask layer 23 and the first thickness D2 measured before the polishing by the first polishing platform 10, i.e., amount1=d1-D2.
As an example, in step S106, based on the first thickness, the total thickness of the layer to be removed, the polishing time of the first polishing platen 10, and the polishing time of the second polishing platen 11, a specific method for obtaining the overall polishing removal rate of the first polishing platen 10 and the second polishing platen 11 to be polished may be to obtain the overall polishing removal rate of the first polishing platen 10 and the second polishing platen 11 to be polished based on the following formula:。
wherein V is 1 The overall polishing removal rate; amount1 is the total thickness of the layer to be removed after the first polishing platen 10 and the second polishing platen 11 are polished; t1 is the polishing time of the first polishing platen 10; t2 is the polishing time of the second polishing platen 11.
As an example, before measuring the first thickness of the layer to be removed remaining after polishing by the second polishing platen 11, further includes: cleaning and drying the test wafer polished by the second polishing platform 11; that is, the steps between step S104 and step S105 may further include the steps of: the test wafer polished by the second polishing table 11 is cleaned and dried. By measuring the first thickness of the remaining layer to be removed after polishing by the second polishing platen 11 after cleaning and drying the test wafer polished by the second polishing platen 11, impurities (such as residual polishing liquid or polishing debris) remaining on the upper surface of the remaining layer to be removed during polishing can be removed, so as to ensure the accuracy of the measurement result.
In step S11, please refer to step S11 in fig. 2 and fig. 6 to 7 in conjunction with fig. 1, a polishing removal rate of the layer to be polished by the third polishing platform 12 is obtained.
As an example, referring to fig. 4, fig. 6, and fig. 7 in conjunction with fig. 1 and fig. 2, in step S11, obtaining the polishing removal rate of the layer to be polished by the third polishing platform 12 may include:
s111: grinding the layer to be removed (namely the dielectric layer 24 positioned on the upper surface of the patterned mask layer 23) after the second platform grinding 11 by using the third grinding platform 12, and recording the grinding time of the third grinding platform 12;
s112: measuring a second thickness of the layer to be removed remained after the third polishing platform 12 is polished;
s113: and obtaining the polishing removal rate of the third polishing platform 12 to the layer to be polished based on the second thickness, the first thickness and the polishing time of the third polishing platform 12.
As an example, in step S112, after the third polishing platform 12 is used to polish the layer to be removed (i.e. the dielectric layer 24 on the upper surface of the patterned mask layer 23), the thickness of the dielectric layer 24 removed after polishing by the third polishing platform 12 obtained after measurement is amount2 as shown in fig. 7.
It should be noted that, if the second thickness of the layer to be removed remaining after polishing by the third polishing platform 12 measured in step S112 is 0, that is, the dielectric layer 24 on the upper surface of the patterned mask layer 23 is completely removed after polishing by the third polishing platform 12, the sum of the total thickness amount1 of the dielectric layer 24 removed after polishing by the first polishing platform 10 and the second polishing platform 11 and the thickness amount2 of the dielectric layer 24 removed after polishing by the third polishing platform 12 is the total thickness of the removed layer measured in step S102, that is, the total thickness D1 of the dielectric layer 24 on the upper surface of the patterned mask layer 23 as shown in fig. 5.
As an example, in step S113, based on the second thickness, the first thickness D1, and the polishing time of the third polishing platen 12, a specific method for obtaining the polishing removal rate of the third polishing platen 12 for the layer to be polished may be to obtain the polishing removal rate of the third polishing platen 12 for the layer to be polished based on the following formula:。
wherein V is 2 A polishing removal rate for the third polishing platen 12 for the layer to be polished; amount2 is the difference between the second thickness and the first thickness, i.e. the thickness of the layer to be polished removed by the third polishing platen 12; t3 is the polishing time of the third polishing platen 12.
As an example, before measuring the second thickness of the layer to be removed remaining after polishing by the third polishing platen 12, further includes: cleaning and drying the test wafer polished by the third polishing platform 12; that is, the steps between step S111 and step S112 may further include the steps of: the test wafer polished by the third polishing table 12 is cleaned and dried. By measuring the first thickness of the remaining layer to be removed after polishing by the third polishing platen 12 after cleaning and drying the test wafer polished by the third polishing platen 12, impurities (such as residual polishing liquid or polishing debris) remaining on the upper surface of the remaining layer to be removed during polishing can be removed, so as to ensure the accuracy of the measurement result.
In step S12, please refer to step S12 in fig. 2 in conjunction with fig. 1, the target polishing time is obtained based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate, and the polishing removal rate of the third polishing platen 12.
As an example, in step S12, the target grinding time may be obtained based on the following formula:。
wherein PT is the target grinding time, amount is the total grinding removal Amount, V 1 For the overall polishing removal rate, V 2 The polishing removal rate for the layer to be polished is the third polishing platen 12.
As an example, the total Amount of grinding removal amountmay be obtained by the following method:
measuring the total thickness of a layer to be polished on a wafer to be polished;
the total polishing removal Amount amountis obtained based on the total thickness of the layer to be polished and the target thickness of the layer to be polished that needs to be reserved after the third polishing platen 12 is polished.
It should be noted that, the target thickness of the layer to be polished to be reserved after polishing by the third polishing platform is the thickness of the layer to be polished reserved after sequentially polishing the layer to be polished by using the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12. The target thickness of the layer to be polished to be reserved after the third polishing platform is polished can be set in advance according to the process requirement.
It should be further noted that, in the polishing method of the present embodiment, step S111 may be directly performed without performing step S106 after step S105, and step S113 may be directly performed without performing step S112, and the target polishing time may be obtained directly based on the total amount of polishing removal of the layer to be polished, the polishing time of the first polishing platen 10, the polishing time of the second polishing platen 11, the first thickness, the polishing time of the third polishing platen 12, and the second thickness after step S112; that is, the overall polishing removal rate of the first polishing platen 10 and the second polishing platen 11 for the polishing layer and the third polishing platen 12 for the polishing layer can be omitted in this embodimentIs a polishing removal rate of (a). Specifically, the target polishing time may be obtained based on the total amount of polishing removal of the layer to be polished, the total thickness of the layer to be removed, the polishing time of the first polishing platen 10, the polishing time of the second polishing platen 11, the first thickness, the polishing time of the third polishing platen 12, and the second thickness by using the following formula:。
wherein PT is the target grinding time; amount is the total Amount removed by grinding; amount1 is the total thickness of the layer to be removed after the first polishing platform 10 and the second polishing platform 11 are polished, that is, the difference between the total thickness of the layer to be removed and the first thickness; t1 is the polishing time of the first polishing platen 10; t2 is the polishing time of the second polishing platen 11; amount2 is the thickness of the layer to be polished removed by the third polishing platform 12, i.e. the difference between the second thickness and the first thickness; t3 is the polishing time of the third polishing platen 12.
In step S13, please refer to step S13 in fig. 2 in conjunction with fig. 1, the first polishing platen 10, the second polishing platen 11 and the third polishing platen 12 are used to sequentially polish the layer to be polished, and the polishing time of the first polishing platen 10, the polishing time of the second polishing platen 11 and the polishing time of the third polishing platen 12 are all target polishing times. That is, in the process of polishing the layer to be polished using the first polishing platen 10, the polishing time of the first polishing platen 10 is equal to the target polishing time, in the process of polishing the layer to be polished using the second polishing platen 11, the polishing time of the second polishing platen 11 is equal to the target polishing time, and in the process of polishing the layer to be polished using the third polishing platen 12, the polishing time of the third polishing platen 12 is equal to the target polishing time; that is, the first polishing platen 10, the second polishing platen 11 and the third polishing platen 12 all use the same polishing time to polish the layer to be polished.
In one example, when polishing a batch of wafers each having a layer to be polished by using the polishing method of the present application, a baffle or a first batch of wafers in the batch of wafers may be selected as a test wafer, the overall polishing removal rate of the layer to be polished of the first polishing platen 10 and the second polishing platen 11 is obtained by adopting the method of step S10, and the polishing removal rate of the layer to be polished of the third polishing platen 12 is obtained by adopting the method of step S11; and then when the batch of subsequent wafers are polished, the total thickness of the to-be-polished layer in the corresponding wafer can be measured and obtained, the total polishing removal amount of the to-be-polished layer is obtained by combining the thickness of the to-be-polished layer to be reserved after polishing, and then the target polishing time is obtained based on the total polishing removal amount of the to-be-polished layer, the overall polishing removal rate and the polishing removal rate of the to-be-polished layer of the third polishing platform 12.
Of course, in another example, if the layers to be polished of the plurality of wafers are all prepared by the same process, after polishing the first wafer by the polishing method of the present application, the overall polishing removal rate obtained in the polishing process of the last wafer and the polishing removal rate of the third polishing platform 12 to be polished of the layers to be polished may be continuously used to obtain the target polishing time of the current wafer.
In the polishing method of the present application, although the test wafer needs to be measured twice and polished twice (the first polishing stage 10 and the second polishing stage 11 sequentially polish and the second polishing stage 12 grinds the second time), the polishing time can be saved compared with the existing polishing method by adopting the polishing method of the present application for the total polishing time of a batch of wafers, so as to improve the polishing efficiency and the production efficiency. For example, taking a lot of 25 wafers as an example, the polishing time of the lot of wafers can be reduced by 1.7% -23% compared with the total polishing time of the prior polishing method, and can be reduced by about 6.196% on average.
The grinding method of the present application has the following unexpected effects: the overall polishing removal rate of the first polishing platform 10 and the second polishing platform 11 to be polished and the polishing removal rate of the third polishing platform 12 to be polished are firstly obtained, then the total polishing removal amount of the layers to be polished is combined to obtain the target polishing time, and finally the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12 are sequentially polished to be polished by adopting the same polishing time (namely the target polishing time), so that the time control of the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12 to be polished can be improved, the overpolishing of the third polishing platform 12 to be polished to be effectively avoided, and the yield of products is improved.
Referring to fig. 8 in conjunction with fig. 1 to 7, the present application further provides a polishing control system 3, where the polishing control system 3 is used for controlling a polishing machine 1 to polish a layer to be polished, the polishing machine 1 includes a first polishing platform 10, a second polishing platform 11, and a third polishing platform 12, and the polishing machine 1 may be, but is not limited to, the polishing machine 1 shown in fig. 1; the polishing control system 3 may include:
the processing system 31, the processing system 31 is configured to obtain an overall polishing removal rate of the first polishing platform 10 and the second polishing platform 11 for the layer to be polished, and a polishing removal rate of the third polishing platform 12 for the layer to be polished, and obtain a target polishing time based on a total polishing removal amount of the layer to be polished, the overall polishing removal rate, and the polishing removal rate of the third polishing platform 12 for the layer to be polished;
the control system 32, the control system 32 is connected with the processing system 31 and the polishing platform 1, and is configured to control the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12 to sequentially polish the polishing layer based on the target polishing time, where the polishing time of the first polishing platform 10, the polishing time of the second polishing platform 11 and the polishing time of the third polishing platform 12 are all target polishing times.
As an example, the processing system 31 may include:
the measuring machine 311 is used for measuring the total thickness of the layer to be removed in the test wafer, the first thickness of the layer to be removed reserved after the second grinding platform 11 is ground, and the second thickness of the layer to be removed reserved after the third grinding platform 12 is ground; the layer to be removed and the layer to be ground are formed by adopting the same process;
the processing device 312, where the processing device 312 is configured to record a polishing time of the first polishing platen 10, a polishing time of the second polishing platen 11, and a polishing time of the third polishing platen 12, obtain an overall polishing removal rate of the first polishing platen 10 and the second polishing platen 11 for the layer to be polished based on the first thickness, the total thickness of the layer to be polished, the polishing time of the first polishing platen 10, and the polishing time of the second polishing platen 11, obtain a polishing removal rate of the third polishing platen 12 for the layer to be polished based on the second thickness, the first thickness, and the polishing time of the third polishing platen 12, and obtain a target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate, and the polishing removal rate of the third polishing platen 12 for the layer to be polished.
As an example, the measuring tool 311 may be any existing thickness measuring tool.
As an example, the processing device 312 may include:
a timing module (not shown) for recording the polishing time of the first polishing platen 10, the polishing time of the second polishing platen 11, and the polishing time of the third polishing platen 12;
a first processing module (not shown) connected to the timing module and the measuring machine 311, for obtaining an overall polishing removal rate of the first polishing platen 10 and the second polishing platen 11 for the layer to be polished based on the first thickness, the total thickness of the layer to be removed, the polishing time of the first polishing platen 10, and the polishing time of the second polishing platen 11, and obtaining a polishing removal rate of the third polishing platen 12 for the layer to be polished based on the second thickness, the first thickness, and the polishing time of the third polishing platen 12;
a second processing module (not shown), coupled to the first processing module and the control system 32, is configured to obtain a target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate, and the polishing removal rate of the layer to be polished by the third polishing platen 12.
As an example, referring to fig. 8, the processing system 31 may further include a cleaning device 313, where the cleaning device 313 is configured to clean and dry the test wafer polished by the second polishing platform 11 after the second polishing platform 11 grinds the layer to be removed of the test wafer, and clean and dry the test wafer polished by the third polishing platform 12 after the third polishing platform 12 grinds the layer to be removed remaining after the second polishing platform 11 grinds. By cleaning and drying after each polishing before the measurement, impurities (such as residual polishing liquid or polishing scraps) remained on the upper surface of the remaining layer to be removed during the polishing can be removed, so as to ensure the accuracy of the measurement result.
It should be noted that, in fig. 8, the direction of the single arrow indicates the direction in which the test wafer is transferred, for example, after the second polishing table 11 of the polishing apparatus 1 finishes polishing the test wafer, the wafer is transferred to the cleaning device 313 for cleaning and drying; after cleaning and drying, the test wafer is transferred to the measuring machine 311 for measurement, and the measured test wafer is transferred to the grinding machine 1 for grinding the test wafer by using the third grinding platform 12 in the grinding machine 1; the test wafer polished by the third polishing platform 12 is transferred to the cleaning device 313 again for cleaning and drying, and the cleaned and dried test wafer is transferred to the measuring machine 311 again for measurement.
The polishing control system 3 of the present application has the following unexpected effects: the processing system 31 obtains the target polishing time by firstly obtaining the overall polishing removal rate of the first polishing platform 10 and the second polishing platform 11 to the layer to be polished, the polishing removal rate of the third polishing platform 12 to the layer to be polished, and then combining the total polishing removal amount of the layer to be polished, the control system 32 further controls the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12 to sequentially polish the layer to be polished with the same polishing time (i.e., the target polishing time), so that the time control of polishing the layer to be polished by the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12 can be improved, and the third polishing platform 12 can be effectively prevented from over-polishing the layer to be polished, thereby improving the yield of products.
In yet another embodiment, referring to fig. 8 in conjunction with fig. 1-7, the present application further provides a polishing system, which may comprise:
the grinding machine 1, the grinding machine 1 may include a first grinding platform 10, a second grinding platform 11, and a third grinding platform 12;
the polishing control system 3 is described in the above embodiment.
As an example, the polishing machine 1 may be the polishing machine 1 shown in fig. 1, and the polishing machine 1 may specifically include a first polishing table 10, a second polishing table 11, a third polishing table 12, and a conversion table 13 arranged in an array, where the first polishing table 10 is provided with a first polishing head 101 to perform corresponding polishing, the second polishing table 11 is provided with a second polishing head 111 to perform corresponding polishing, the third polishing table 12 is provided with a third polishing head 121 to perform corresponding polishing, and the third polishing table 12 is provided with an endpoint detection device 14 for detecting an endpoint of polishing. The polishing machine 1 in this embodiment may be a polishing machine in which the endpoint detection device 14 is removed based on the polishing machine 1 in fig. 1.
The specific structure of the polishing control system 3 is shown in fig. 8 and described in the previous embodiment, and will not be described here.
The grinding system of the present application has the following unexpected effects: the processing system 31 in the polishing control system 3 obtains the target polishing time by firstly obtaining the overall polishing removal rate of the first polishing platform 10 and the second polishing platform 11 to the layer to be polished and the polishing removal rate of the third polishing platform 12 to the layer to be polished, and then combining the total polishing removal amount of the layer to be polished, and the control system 32 controls the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12 to sequentially polish the layer to be polished by adopting the same polishing time (namely the target polishing time), so that the time control of the first polishing platform 10, the second polishing platform 11 and the third polishing platform 12 to polish the layer to be polished can be improved, the over-polishing of the third polishing platform 12 to the layer to be polished can be effectively avoided, and the product yield is improved.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples represent only a few embodiments of the present application, which are described in more detail and are not thereby to be construed as limiting the scope of the present application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application shall be subject to the appended claims.

Claims (10)

1. A method of grinding comprising:
acquiring the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground;
acquiring the grinding removal rate of the third grinding platform on the layer to be ground;
obtaining target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate and the polishing removal rate of the third polishing platform on the layer to be polished;
and sequentially polishing the layer to be polished by using the first polishing platform, the second polishing platform and the third polishing platform, wherein the polishing time of the first polishing platform, the polishing time of the second polishing platform and the polishing time of the third polishing platform are all the target polishing time.
2. The polishing method of claim 1, wherein the obtaining the overall polishing removal rate of the layer to be polished by the first polishing platen and the second polishing platen comprises:
providing a test wafer, wherein the test wafer comprises a layer to be removed, and the layer to be removed and the layer to be ground are formed by adopting the same process;
measuring the total thickness of the layer to be removed;
grinding the layer to be removed by using the first grinding platform, and recording the grinding time of the first grinding platform;
grinding the layer to be removed after grinding by using the second grinding platform, and recording the grinding time of the second grinding platform;
measuring the first thickness of the layer to be removed remained after the second grinding platform is ground;
and obtaining the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground based on the first thickness, the total thickness of the layer to be removed, the grinding time of the first grinding platform and the grinding time of the second grinding platform.
3. The polishing method as set forth in claim 2, wherein the obtaining a polishing removal rate of the layer to be polished by the third polishing platform includes:
grinding the layer to be removed after the second platform grinding by using the third grinding platform, and recording the grinding time of the third grinding platform;
measuring the second thickness of the layer to be removed remained after the third grinding platform is ground;
and obtaining the grinding removal rate of the third grinding platform on the layer to be ground based on the second thickness, the first thickness and the grinding time of the third grinding platform.
4. The polishing method according to claim 3, wherein,
the measuring the first thickness of the layer to be removed remained after the second polishing platform is polished, further comprises: cleaning and drying the test wafer polished by the second polishing platform;
before the measuring the second thickness of the layer to be removed, which remains after the third polishing platform is polished, the method further comprises: and cleaning and drying the test wafer polished by the third polishing platform.
5. The polishing method according to claim 2, wherein the obtaining a target polishing time based on the total amount of polishing removal of the layer to be polished, the overall polishing removal rate, and the polishing removal rate of the layer to be polished by the third polishing platform comprises: based on the following formulaThe target grinding time:；
wherein PT is the target grinding time, amount is the total grinding removal Amount, V 1 V for the bulk polish removal rate 2 And the polishing removal rate of the third polishing platform on the layer to be polished is set.
6. The polishing method of claim 2, wherein the providing a test wafer comprises:
and providing the same batch of wafers, wherein the same batch of wafers comprise the test wafer and a plurality of wafers to be ground, and the wafers to be ground comprise the layers to be ground.
7. The polishing method of claim 6, wherein the test wafer and the wafer to be polished each comprise:
a substrate, wherein a shallow trench is formed in the substrate;
the patterned mask layer is positioned on the upper surface of the substrate; an opening is formed in the patterned mask layer, the opening is arranged corresponding to the shallow trench, and the opening is communicated with the shallow trench;
the dielectric layer is filled in the shallow trench and the opening and covers the upper surface of the patterned mask layer; the dielectric layer positioned on the upper surface of the patterned mask layer is the layer to be removed or the layer to be ground.
8. The grinding control system is characterized by being used for controlling a grinding machine to grind a layer to be ground, wherein the grinding machine comprises a first grinding platform, a second grinding platform and a third grinding platform; the polishing control system includes:
the processing system is used for acquiring the overall grinding removal rate of the first grinding platform and the second grinding platform to the layer to be ground and the grinding removal rate of the third grinding platform to the layer to be ground, and obtaining target grinding time based on the total grinding removal amount of the layer to be ground, the overall grinding removal rate and the grinding removal rate of the third grinding platform to the layer to be ground;
the control system is connected with the processing system and the grinding machine table and is used for controlling the first grinding platform, the second grinding platform and the third grinding platform to grind the layer to be ground in sequence based on the target grinding time, and the grinding time of the first grinding platform, the grinding time of the second grinding platform and the grinding time of the third grinding platform are all the target grinding time.
9. The polishing control system of claim 8, wherein the processing system comprises:
the measuring machine is used for measuring the total thickness of the layer to be removed in the test wafer, the first thickness of the layer to be removed reserved after the second grinding platform is ground and the second thickness of the layer to be removed reserved after the third grinding platform is ground; the layer to be removed and the layer to be ground are formed by adopting the same process;
the processing device is used for recording the polishing time of the first polishing platform, the polishing time of the second polishing platform and the polishing time of the third polishing platform, obtaining the overall polishing removal rate of the first polishing platform and the second polishing platform to the layer to be polished based on the first thickness, the total thickness of the layer to be removed, the polishing time of the first polishing platform and the polishing time of the second polishing platform, obtaining the polishing removal rate of the third polishing platform to the layer to be polished based on the second thickness, the first thickness and the polishing time of the third polishing platform, and obtaining the target polishing time based on the total polishing removal amount of the layer to be polished, the overall polishing removal rate and the polishing removal rate of the third polishing platform to the layer to be polished.
10. A grinding system, comprising:
the grinding machine comprises a first grinding platform, a second grinding platform and a third grinding platform;
the polishing control system of claim 8 or 9.
CN202310826828.1A 2023-07-07 2023-07-07 Grinding method, grinding control system and grinding system Active CN116533133B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310826828.1A CN116533133B (en) 2023-07-07 2023-07-07 Grinding method, grinding control system and grinding system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310826828.1A CN116533133B (en) 2023-07-07 2023-07-07 Grinding method, grinding control system and grinding system

Publications (2)

Publication Number Publication Date
CN116533133A true CN116533133A (en) 2023-08-04
CN116533133B CN116533133B (en) 2023-09-22

Family

ID=87456477

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310826828.1A Active CN116533133B (en) 2023-07-07 2023-07-07 Grinding method, grinding control system and grinding system

Country Status (1)

Country Link
CN (1) CN116533133B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
CN102049729A (en) * 2009-11-06 2011-05-11 无锡华润上华半导体有限公司 Grinding method
CN102452039A (en) * 2010-10-19 2012-05-16 上海宏力半导体制造有限公司 Chemical-mechanical grinding method
US20160303703A1 (en) * 2015-04-14 2016-10-20 Jun Yang Scanning Chemical Mechanical Polishing
CN115533737A (en) * 2022-11-30 2022-12-30 合肥晶合集成电路股份有限公司 Chemical mechanical polishing method and system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
CN102049729A (en) * 2009-11-06 2011-05-11 无锡华润上华半导体有限公司 Grinding method
CN102452039A (en) * 2010-10-19 2012-05-16 上海宏力半导体制造有限公司 Chemical-mechanical grinding method
US20160303703A1 (en) * 2015-04-14 2016-10-20 Jun Yang Scanning Chemical Mechanical Polishing
CN115533737A (en) * 2022-11-30 2022-12-30 合肥晶合集成电路股份有限公司 Chemical mechanical polishing method and system

Also Published As

Publication number Publication date
CN116533133B (en) 2023-09-22

Similar Documents

Publication Publication Date Title
CN101271835B (en) Method of manufacturing a semiconductor device and a semiconductor manufacturing equipment
EP1068047B1 (en) Apparatus and method for film thickness measurement integrated into a wafer load/unload unit
US5972124A (en) Method for cleaning a surface of a dielectric material
US5389579A (en) Method for single sided polishing of a semiconductor wafer
US11728172B2 (en) Wafer thinning apparatus having feedback control
JP2009100001A (en) Cmp method, cmp device, and semiconductor device and manufacturing method thereof
CN116533133B (en) Grinding method, grinding control system and grinding system
JP2014179632A (en) High throughput low topography copper cmp process
US7700488B2 (en) Recycling of ion implantation monitor wafers
US20070123046A1 (en) Continuous in-line monitoring and qualification of polishing rates
US9418904B2 (en) Localized CMP to improve wafer planarization
US6242352B1 (en) Method of preventing micro-scratches on the surface of a semiconductor wafer when performing a CMP process
KR102269454B1 (en) Zone-based cmp target control
US20020155795A1 (en) Optical endpoint detection for buff module on CMP tool
Lin et al. An effective end point detector on oxide CMP by motor current
Chew et al. Characterization and optimization of a TSV CMP reveal process using a novel wafer inspection technique for detecting sub-monolayer surface contamination
US20180169825A1 (en) Method and system for monitoring polishing pad before cmp process
CN102416596A (en) Device for improving wafer surface scratched by fixed abrasive polishing pad
JP2000133623A (en) Planarizing method and equipment
JP5517741B2 (en) Substrate transfer method
CN105575843A (en) Cleaning efficiency detecting method for cleaning unit
Mendonca et al. Exploring CMP solutions to planarity challenges with tungsten plugs
US20090286453A1 (en) Method and apparatus for chemical-mechanical polishing
CN114346893A (en) Chemical mechanical polishing method
JP2004311549A (en) Cmp method, cmp device, semiconductor device, and its manufacturing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant