CN116526294B - Semiconductor light-emitting structure, preparation method thereof and packaging module - Google Patents
Semiconductor light-emitting structure, preparation method thereof and packaging module Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 199
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000004806 packaging method and process Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 15
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000000670 limiting effect Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 239000002131 composite material Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 17
- 238000009826 distribution Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000969 carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003913 materials processing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000013070 direct material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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Abstract
The invention discloses a semiconductor light-emitting structure, a preparation method thereof and a packaging module, wherein the semiconductor light-emitting structure comprises: an active layer; an upper waveguide confinement structure located on one side of the active layer; the upper waveguide confinement structure includes: the upper waveguide layer comprises a first sub upper waveguide layer and a second sub upper waveguide layer, and the second sub upper waveguide layer is positioned at one side of the first sub upper waveguide layer, which is away from the active layer; the first refractive index adjusting pieces are arranged in the second sub-upper waveguide layer at intervals, the first refractive index adjusting pieces do not extend into the first sub-upper waveguide layer, and the refractive index of the first refractive index adjusting pieces is smaller than that of the second sub-upper waveguide layer. The electro-optical conversion efficiency is effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor light-emitting structure, a preparation method thereof and a packaging module.
Background
A semiconductor laser is a device that converts current into light by means of an electric pump and realizes laser excitation in a resonant cavity. Semiconductor lasers cover a wide range of scientific and industrial applications, from atomic physics to telecommunications, from biophotonics to materials processing, wherein the main uses of high-power high-efficiency semiconductor lasers include direct materials processing and as a pump source for solid lasers, and the laser power and the electro-optical conversion efficiency of a semiconductor laser of a single chip are the most direct indicators for measuring the performance of the semiconductor laser. With the iterative development of manufacturing technology of high-power semiconductor lasers, higher requirements are put on the index of the electro-optical conversion efficiency. The structure of the semiconductor laser determines the upper limit of the electro-optic conversion efficiency, most of the current high-power semiconductor laser structures are built on a semiconductor material system of III-group elements and V-group elements which can be epitaxially grown on a GaAs substrate, and the light field and the current carriers are respectively limited by the design of the epitaxial structure, so that the laser output with high electro-optic conversion efficiency is realized.
However, it is difficult to achieve further improvement in the electro-optical conversion efficiency by the design and manufacturing technology of the existing high-power semiconductor laser.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to solve the problem of further improving the electro-optical conversion efficiency of the semiconductor light-emitting structure, so as to provide the semiconductor light-emitting structure, the preparation method thereof and the packaging module.
The present invention provides a semiconductor light emitting structure, comprising: an active layer; an upper waveguide confinement structure located on one side of the active layer; the upper waveguide confinement structure includes: the upper waveguide layer comprises a first sub upper waveguide layer and a second sub upper waveguide layer, and the second sub upper waveguide layer is positioned at one side of the first sub upper waveguide layer, which is away from the active layer; the first refractive index adjusting pieces are arranged in the second sub-upper waveguide layer at intervals, the first refractive index adjusting pieces do not extend into the first sub-upper waveguide layer, and the refractive index of the first refractive index adjusting pieces is smaller than that of the second sub-upper waveguide layer.
Optionally, the first refractive index adjuster has a refractive index of less than 2.5 for light having a wavelength in the range 500nm to 1200 nm.
Optionally, the first refractive index adjuster has an absorption coefficient of less than or equal to 0.03 for light having a wavelength in a range of 500nm to 1200 nm.
Optionally, the material of the first refractive index adjuster comprises indium tin oxide, silicon nitride, aluminum oxide, caF 2 、HfO 2 MgO or ZrO 2 。
Optionally, a ratio of a thickness of the second sub-upper waveguide layer to a thickness of the first sub-upper waveguide layer is 1: 5-5: 1.
optionally, the total thickness of the upper waveguide layer is 0.1-5 microns.
Optionally, the size of each first refractive index adjusting member along the light emitting direction of the semiconductor light emitting structure is smaller than λ/2n, λ is the light emitting wavelength of the semiconductor light emitting structure, and n is the refractive index of the first refractive index adjusting member.
Optionally, the spacing between adjacent first refractive index adjustment members is less than λ/2n 1 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 1 Is the refractive index of the waveguide layer on the second sub.
Optionally, the shape of the first refractive index adjuster includes a truncated cone shape, a square truncated cone shape or a strip shape.
Optionally, the plurality of first refractive index adjusting members are uniformly distributed in the light emitting direction of the semiconductor light emitting structure.
Optionally, the plurality of first refractive index adjusting members are unevenly distributed.
Optionally, the number of the first refractive index adjusting members increases gradually along the light emitting direction of the semiconductor light emitting structure.
Optionally, the doping concentration of the second sub-upper waveguide layer is greater than the doping concentration of the first sub-upper waveguide layer.
Optionally, the material of the upper waveguide layer comprises Al doped with conductive ions x Ga 1-x As, wherein x is 0 to 0.45.
Optionally, the method further comprises: the contact layer is positioned at one side of the second sub-upper waveguide layer, which is away from the first sub-upper waveguide layer, and is in contact with the second sub-upper waveguide layer; the first refractive index adjuster also extends into the contact layer.
Optionally, the method further comprises: the semiconductor substrate layer is positioned on one side of the active layer, which is away from the upper waveguide limiting structure; a lower confinement layer located between the semiconductor substrate layer and the active layer; a lower waveguide layer located between the lower confinement layer and the active layer.
Optionally, the method further comprises: a lower waveguide layer positioned on a side of the active layer facing away from the upper waveguide confinement structure; the lower waveguide layer comprises a first sub lower waveguide layer and a second sub lower waveguide layer positioned between the first sub lower waveguide layer and the active layer; a plurality of second refractive index adjustment members located in the first sub-lower waveguide layer; the side of the lower waveguide layer facing away from the active layer is not provided with a semiconductor substrate layer and a lower confinement layer.
Optionally, the second refractive index adjuster has a refractive index of less than 2.5 for light having a wavelength in the range 500nm to 1200 nm.
Optionally, the material of the second refractive index adjuster comprises indium tin oxide, silicon nitride, aluminum oxide, caF 2 、HfO 2 MgO or ZrO 2 。
Optionally, a dimension of each of the second refractive index adjusting members along the light emitting direction of the semiconductor light emitting structure is smaller than λ/2n 2 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 2 The refractive index of the second refractive index adjuster.
Optionally, the spacing between adjacent second refractive index adjustment members is less than λ/2n 3 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 3 Is the refractive index of the first sub-lower waveguide layer.
The invention also provides a preparation method of the semiconductor light-emitting structure, which comprises the following steps: forming an active layer; forming an upper waveguide confinement structure on one side of the active layer; the step of forming the upper waveguide confinement structure includes: forming an upper waveguide layer, the step of forming the upper waveguide layer comprising: forming a first sub-upper waveguide layer; forming a second sub-upper waveguide layer on one side of the first sub-upper waveguide layer away from the active layer; and forming a plurality of first refractive index adjusting parts which are arranged at intervals in the second sub-upper waveguide layer, wherein the first refractive index adjusting parts do not extend to the first sub-upper waveguide layer, and the refractive index of the first refractive index adjusting parts is smaller than that of the second sub-upper waveguide layer.
Optionally, the method further comprises: forming a contact layer on one side of the second sub-upper waveguide layer away from the active layer; in the step of forming the first refractive index adjuster, the first refractive index adjuster also extends into the contact layer.
Optionally, the method further comprises: providing a semiconductor substrate layer; forming a lower confinement layer on one side of the semiconductor substrate layer; forming a lower waveguide layer on one side of the lower confinement layer away from the semiconductor substrate layer; the step of forming the active layer is: forming an active layer on a side of the lower waveguide layer facing away from the semiconductor substrate layer; the step of forming the upper waveguide confinement structure on one side of the active layer is: an upper waveguide confinement structure is formed on a side of the active layer facing away from the semiconductor substrate layer.
Optionally, the method further comprises: providing a semiconductor substrate layer; forming a lower waveguide layer on one side surface of the semiconductor substrate layer; the lower waveguide layer comprises a first sub lower waveguide layer and a second sub lower waveguide layer positioned on one side of the first sub lower waveguide layer away from the semiconductor substrate layer; the step of forming the active layer is: forming an active layer on a side of the lower waveguide layer facing away from the semiconductor substrate layer; the step of forming the upper waveguide confinement structure on one side of the active layer is: forming an upper waveguide confinement structure on a side of the active layer facing away from the semiconductor substrate layer; the preparation method of the semiconductor light-emitting structure further comprises the following steps: removing the semiconductor substrate layer after forming the upper waveguide confinement structure; after the semiconductor substrate layer is removed, a plurality of second refractive index adjusting parts are formed in the first sub-lower waveguide layer, and the second refractive index adjusting parts do not extend into the second sub-lower waveguide layer, and the refractive index of the second refractive index adjusting parts is smaller than that of the first sub-lower waveguide layer.
The invention also provides a packaging module, comprising: a heat sink; the semiconductor light emitting structure of the present invention; the semiconductor light-emitting structure is positioned on the heat sink; the upper waveguide layer is located between the active layer and the heat sink.
The technical scheme of the invention has the following beneficial effects:
according to the semiconductor light-emitting structure provided by the technical scheme of the invention, the second sub-upper waveguide layer is internally provided with the plurality of first refractive index adjusting parts at intervals, the refractive index of the first refractive index adjusting parts is smaller than that of the second sub-upper waveguide layer, so that the second sub-upper waveguide layer and the first refractive index adjusting parts form refractive index differences, the light field is limited, the absorption of free carriers to the light is reduced, and the limiting effect of the combination of the first refractive index adjusting parts and the second sub-upper waveguide layer on the light field can be effectively improved. The first sub-upper waveguide layer acts as an effective waveguide region over the active layer, contributing to the transmission of light. Because the limitation of the optical field is realized in the upper waveguide layer, the upper limiting layer can be omitted, the resistance is reduced, and the electro-optical conversion efficiency is effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a semiconductor light emitting structure according to an embodiment of the present invention;
fig. 2 is a schematic perspective view of an upper waveguide layer and a first refractive index adjuster in a semiconductor light emitting structure according to an embodiment of the present invention;
fig. 3 is a schematic perspective view of an upper waveguide layer and a first refractive index adjuster in a semiconductor light emitting structure according to another embodiment of the present invention;
fig. 4 is a schematic perspective view of an upper waveguide layer and a first refractive index adjuster in a semiconductor light emitting structure according to another embodiment of the present invention;
FIG. 5 is a top view of an upper waveguide layer and a first refractive index adjuster in a semiconductor light emitting structure according to an embodiment of the present invention;
FIG. 6 is a top view of an upper waveguide layer and a first refractive index adjuster in a semiconductor light emitting structure according to another embodiment of the present invention;
FIG. 7 is a schematic diagram of a structure of forming a lower confinement layer, a lower waveguide layer and an active layer on one side of a semiconductor substrate layer according to another embodiment of the present invention;
FIG. 8 is a schematic diagram of a structure for forming an upper waveguide layer and a contact layer on the basis of FIG. 7;
FIG. 9 is a schematic view of a structure of forming a first refractive index adjuster on the basis of FIG. 8;
fig. 10 is a schematic structural diagram of a semiconductor light emitting structure according to another embodiment of the present invention;
Fig. 11 is a schematic view showing a structure in which a lower waveguide layer and an active layer, an upper waveguide layer and a contact layer are formed on one side of a semiconductor substrate layer according to another embodiment of the present invention;
FIG. 12 is a schematic view showing a structure of forming a first refractive index adjuster on the basis of FIG. 11;
FIG. 13 is a schematic view of the removal of a semiconductor substrate layer based on FIG. 12;
fig. 14 is a schematic structural view of forming a second refractive index adjuster on the basis of fig. 13;
FIG. 15 is a graph showing the optical field distribution curve and refractive index curve of the semiconductor light emitting structure of the comparative example;
FIG. 16 is a light field distribution curve and a refractive index curve of the semiconductor light emitting structure of the embodiment 1;
fig. 17 is a light field distribution curve and a refractive index curve of the semiconductor light emitting structure of embodiment 3.
Detailed Description
It has been found that the key aspect of the improvement of the electro-optic conversion efficiency is to reduce the optical field entering the highly doped confinement layer from the low doped waveguide layer and reduce the absorption of free carriers to light, which requires the improvement of the refractive index difference between the waveguide layer and the confinement layer; on the other hand, it is desirable to reduce joule heating, i.e., to reduce the resistance of each layer of semiconductor material. The greater the refractive index difference between the confinement layer and the waveguide layer, the smaller the thickness of the waveguide layer can be made, and the lower the resistance can be obtained. But the refractive index difference between the different group III and group IV semiconductor materials is not large per se, which results in a limited confinement ability of the confinement layer to the optical field and a limitation of the thickness of the waveguide layer. And under the condition that the refractive index of the confinement layer and the refractive index of the waveguide layer reach the difference limit, the electrical conductivity of the confinement layer is poor, and the improvement of the electro-optical conversion efficiency is limited based on the above factors.
On the basis, the invention provides the semiconductor light-emitting structure and the preparation method thereof, and the electro-optic conversion efficiency is effectively improved.
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Example 1
The present embodiment provides a semiconductor light emitting structure, referring to fig. 1, including:
an active layer 130;
an upper waveguide confinement structure located at one side of the active layer 130;
the upper waveguide confinement structure includes: an upper waveguide layer 140, wherein the upper waveguide layer 140 includes a first sub upper waveguide layer 141 and a second sub upper waveguide layer 142, and the second sub upper waveguide layer 142 is located at a side of the first sub upper waveguide layer 141 facing away from the active layer 130; the first refractive index adjusting members 160 are disposed in the second sub-upper waveguide layer 142 at intervals, and the first refractive index adjusting members 160 do not extend into the first sub-upper waveguide layer 141, and the refractive index of the first refractive index adjusting members 160 is smaller than that of the second sub-upper waveguide layer 142.
In this embodiment, the second sub-upper waveguide layer 142 is provided with a plurality of first refractive index adjusting members 160 spaced apart, and the refractive index of the first refractive index adjusting members 160 is smaller than that of the second sub-upper waveguide layer 142, so that the second sub-upper waveguide layer 142 and the first refractive index adjusting members 160 form a refractive index difference, limit the optical field, reduce the absorption of free carriers to light, and the combination of the first refractive index adjusting members 160 and the second sub-upper waveguide layer 142 can effectively improve the limiting effect of the optical field. The first sub-upper waveguide layer 141 acts as an effective waveguide region over the active layer 130, contributing to the transmission of light. Since confinement of the optical field is achieved in the upper waveguide layer 140, the upper confinement layer can be eliminated, and the resistance can be reduced, so that the electro-optical conversion efficiency can be effectively improved.
In this embodiment, the semiconductor light emitting structure is an edge emitting semiconductor laser.
In this embodiment, the semiconductor light emitting structure further includes: a semiconductor substrate layer 100 on a side of the active layer 130 facing away from the upper waveguide confinement structure; a lower confinement layer 110 between the semiconductor substrate layer 100 and the active layer 130; a lower waveguide layer 120 located between the lower confinement layer 110 and the active layer 130.
The semiconductor substrate layer 100 is a GaAs substrate layer. It should be noted that, in other embodiments, the semiconductor substrate layer may also be an InP substrate layer.
In one embodiment, the first refractive index adjuster 160 has a refractive index of less than 2.5 for light having a wavelength in the range of 500nm to 1200 nm.
In one embodiment, the refractive index of the second sub-upper waveguide layer 142 is greater than or equal to the refractive index of the first sub-upper waveguide layer 141.
In one embodiment, the difference between the refractive index of the second sub-upper waveguide layer 142 and the refractive index of the first refractive index adjuster 160 is 1-2.5. If the difference between the refractive index of the second sub-upper waveguide layer 142 and the refractive index of the first refractive index adjuster 160 is too small, the degree of optical field confinement is improved to a small extent; if the difference between the refractive index of the second sub-upper waveguide layer 142 and the refractive index of the first refractive index adjuster 160 is too large, the material selection of the first refractive index adjuster 160 is limited.
In one embodiment, the first refractive index adjuster 160 has an absorption coefficient of less than or equal to 0.03 for light having a wavelength in the range of 500nm to 1200 nm. The advantages are that: the loss of light generated in the cavity of the semiconductor light emitting structure is small.
In one embodiment, the material of the first refractive index adjuster 160 comprises indium tin oxide, silicon nitride, aluminum oxide, caF 2 、HfO 2 MgO or ZrO 2 。
In one embodiment, the ratio of the thickness of the second sub-upper waveguide layer 142 to the thickness of the first sub-upper waveguide layer 141 is 1: 5-5: 1. if the ratio of the thickness of the second sub-upper waveguide layer 142 to the thickness of the first sub-upper waveguide layer 141 is less than 1:5, the ability to improve the light field limitation is weaker; if the ratio of the thickness of the second sub-upper waveguide layer 142 to the thickness of the first sub-upper waveguide layer 141 is greater than 5:1, the thickness of the second sub-upper waveguide layer 142 is too large, resulting in process waste.
In one embodiment, the upper waveguide layer 140 has a total thickness of 0.1 microns to 5 microns, such as 0.1 microns, 0.5 microns, 1 micron, 2 microns, 3 microns, 4 microns, or 5 microns.
In one embodiment, a dimension d of each first refractive index adjuster 160 along the light emitting direction of the semiconductor light emitting structure is smaller than λ/2n, λ is a light emitting wavelength of the semiconductor light emitting structure, and n is a refractive index of the first refractive index adjuster 160. The dimension d of the first refractive index adjuster 160 along the light emitting direction of the semiconductor light emitting structure ensures that the propagation distance of the light in the light emitting direction in any one of the first refractive index adjusters 160 does not exceed a period T, where t=λ/v, v is the transmission speed of the light emitted by the semiconductor light emitting structure in the first refractive index adjuster 160, and the light is prevented from being modulated by the gratings formed by the plurality of first refractive index adjusters 160, which is beneficial to the high-power performance improvement of the semiconductor light emitting structure.
In one embodiment, the spacing between adjacent first refractive index adjuster 160 is less than λ/2n 1 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 1 Is the refractive index of the second sub-upper waveguide layer 142. The advantages are that: the first refractive index adjuster 160 prevents the grating from being formed to modulate light, so that the semiconductor light emitting structure is advantageous for high power performance.
In one embodiment, referring to fig. 2, the first refractive index adjuster 160 has a truncated cone shape.
In another embodiment, referring to fig. 3, the first refractive index adjuster 160a is square-mesa-shaped.
In another embodiment, referring to fig. 4, the first refractive index adjuster 160b is strip-shaped.
In one embodiment, referring to fig. 5, a plurality of first refractive index adjusting members 160 are uniformly distributed in the light emitting direction of the semiconductor light emitting structure.
In another embodiment, referring to fig. 6, a plurality of first refractive index adjusters 160c are unevenly distributed.
In a specific embodiment, the number of the first refractive index adjusting members 160c increases along the light emitting direction of the semiconductor light emitting structure. The advantages are that: the light field distribution and the electric injection distribution in the semiconductor light-emitting structure are adjusted, the heat dissipation performance of the semiconductor light-emitting structure is enhanced, and the electro-optical conversion efficiency of the semiconductor light-emitting structure is further improved.
In one embodiment, the material of the upper waveguide layer 140 includes Al doped with conductive ions x Ga 1-x As, wherein x is 0 to 0.45. In one embodiment, x is greater than zero and less thanOr equal to 0.45.
In one embodiment, the doping concentration of the second sub-upper waveguide layer 142 is greater than the doping concentration of the first sub-upper waveguide layer 141. The advantages are that: the conductivity of the upper waveguide layer 140 is improved, and the resistance of the semiconductor light emitting structure is reduced; the doping concentration of the first sub-upper waveguide layer 141 is relatively small so that the absorption loss of the conductive ions in the first sub-upper waveguide layer 141 to light is small.
In one embodiment, the doping concentration of the second sub-upper waveguide layer 142 is 2 to 1000 times, for example 10 times, 100 times, 500 times or 1000 times, that of the first sub-upper waveguide layer 141.
In one embodiment, the doping concentration of the second sub-upper waveguide layer 142 is 1×10 17 atom/cm 3 ~1×10 20 atom/cm 3 . The doping concentration of the first sub-upper waveguide layer 141 is 1×10 15 atom/cm 3 ~1×10 18 atom/cm 3 。
In other embodiments, the doping concentration of the second sub-upper waveguide layer 142 is equal to the doping concentration of the first sub-upper waveguide layer 141. In other embodiments, the doping concentration of the second sub-upper waveguide layer 142 and the doping concentration of the first sub-upper waveguide layer 141 are not limited.
In one embodiment, the total resistance of the semiconductor light emitting structure is less than 10mΩ.
In this embodiment, the semiconductor light emitting structure further includes: further comprises: a contact layer 150 located at a side of the second sub-upper waveguide layer 142 facing away from the first sub-upper waveguide layer 141 and contacting the second sub-upper waveguide layer 142; the first refractive index adjuster 160 also extends into the contact layer 150. The first refractive index adjuster 160 penetrates the second sub-upper waveguide layer 142.
In this embodiment, the semiconductor light emitting structure further includes: a front electrode layer (not shown) on a side of the contact layer 150 facing away from the semiconductor substrate layer 100, the contact layer 150 being configured to reduce contact resistance between the upper waveguide layer 140 and the front electrode layer; and a back electrode layer on a side surface of the semiconductor substrate layer 100 facing away from the active layer 130.
In other embodiments, no contact layer is provided between the front electrode layer and the upper waveguide layer.
In this embodiment, no upper confinement layer is provided on the side of the upper waveguide layer 140 facing away from the semiconductor substrate layer 100.
Example 2
The embodiment provides a method for manufacturing a semiconductor light-emitting structure, which comprises the following steps: forming an active layer; forming an upper waveguide confinement structure on one side of the active layer; the step of forming the upper waveguide confinement structure includes: forming an upper waveguide layer, the step of forming the upper waveguide layer comprising: forming a first sub-upper waveguide layer; forming a second sub-upper waveguide layer on one side of the first sub-upper waveguide layer away from the active layer; and forming a plurality of first refractive index adjusting parts which are arranged at intervals in the second sub-upper waveguide layer, wherein the first refractive index adjusting parts do not extend to the first sub-upper waveguide layer, and the refractive index of the first refractive index adjusting parts is smaller than that of the second sub-upper waveguide layer.
The method of fabricating the semiconductor light emitting structure is described in detail below with reference to fig. 7 to 9.
Referring to fig. 7, a semiconductor substrate layer 100 is provided; forming a lower confinement layer 110 on one side of the semiconductor substrate layer 100; forming a lower waveguide layer 120 on a side of the lower confinement layer 110 facing away from the semiconductor substrate layer 100; an active layer 130 is formed on a side of the lower waveguide layer 120 facing away from the semiconductor substrate layer 100.
Referring to fig. 8 and 9, an upper waveguide confinement structure is formed at one side of the active layer 130.
The step of forming the upper waveguide confinement structure on one side of the active layer 130 is: an upper waveguide confinement structure is formed on a side of the active layer 130 facing away from the semiconductor substrate layer 100.
The step of forming the upper waveguide confinement structure includes: referring to fig. 8, forming the upper waveguide layer 140, the step of forming the upper waveguide layer 140 includes: forming a first sub-upper waveguide layer 141; forming a second sub-upper waveguide layer 142 on a side of the first sub-upper waveguide layer 141 facing away from the active layer 130; referring to fig. 9, a plurality of first refractive index adjuster 160 disposed at intervals are formed in the second sub-upper waveguide layer 142, and the first refractive index adjuster 160 does not extend to the first sub-upper waveguide layer 141, and the refractive index of the first refractive index adjuster 160 is smaller than that of the second sub-upper waveguide layer 142.
Referring to fig. 9, a contact layer 150 is formed on a side of the second sub-upper waveguide layer 142 facing away from the active layer 130; in the step of forming the first refractive index adjuster 160, the first refractive index adjuster 160 also extends into the contact layer 150.
In other embodiments, the contact layer may not be formed.
In this embodiment, the semiconductor light emitting structure further includes: forming a front electrode layer (not shown), wherein the front electrode layer is positioned on one side of the contact layer 150 away from the semiconductor substrate layer 100, and the contact layer 150 is used for reducing the contact resistance between the upper waveguide layer 140 and the front electrode layer; a back electrode layer is formed on a side surface of the semiconductor substrate layer 100 facing away from the active layer 130.
Example 3
The present embodiment provides a semiconductor light emitting structure, referring to fig. 10, including: an active layer 230; an upper waveguide confinement structure located at one side of the active layer 230; the upper waveguide confinement structure includes: an upper waveguide layer 240, wherein the upper waveguide layer 240 includes a first sub upper waveguide layer 241 and a second sub upper waveguide layer 242, and the second sub upper waveguide layer 242 is located at a side of the first sub upper waveguide layer 241 facing away from the active layer 230; a plurality of first refractive index adjusting members 260 disposed at intervals in the second sub-upper waveguide layer 242, wherein the first refractive index adjusting members 260 do not extend into the first sub-upper waveguide layer 241, and the refractive index of the first refractive index adjusting members 260 is smaller than that of the second sub-upper waveguide layer 242; a lower waveguide layer 220 on a side of the active layer 230 facing away from the upper waveguide confinement structure; the lower waveguide layer 220 includes a first sub lower waveguide layer 221 and a second sub lower waveguide layer 222 between the first sub lower waveguide layer 221 and the active layer 230; a plurality of second refractive index adjusters 270 disposed at intervals in the first sub-lower waveguide layer 221; the side of the lower waveguide layer 220 facing away from the active layer 230 is not provided with a semiconductor substrate layer and a lower confinement layer.
The second refractive index adjuster 270 penetrates the first sub-lower waveguide layer 221.
In one embodiment, the second refractive index adjuster 270 has a refractive index less than 2.5 for light having a wavelength in the range of 500nm to 1200 nm.
In one embodiment, the refractive index of the first sub-lower waveguide layer 221 is greater than or equal to the refractive index of the second sub-lower waveguide layer 222.
In one embodiment, the difference between the refractive index of the first sub-lower waveguide layer 221 and the refractive index of the second refractive index adjuster 270 is 1-2.5. If the difference between the refractive index of the first sub-lower waveguide layer 221 and the refractive index of the second refractive index adjuster 270 is too small, the degree of optical field confinement is improved to a small extent; if the difference between the refractive index of the first sub-lower waveguide layer 221 and the refractive index of the second refractive index adjuster 270 is too large, the material selection of the second refractive index adjuster 270 is limited.
In one embodiment, the second refractive index adjuster 270 has an absorption coefficient of less than or equal to 0.03 for light having a wavelength in the range of 500nm to 1200 nm. The advantages are that: the loss of light generated in the cavity of the semiconductor light emitting structure is small.
In one embodiment, the material of the second refractive index adjuster 270 comprises indium tin oxide, silicon nitride, aluminum oxide, caF 2 、HfO 2 MgO or ZrO 2 。
In one embodiment, the ratio of the thickness of the second sub-lower waveguide layer 222 to the thickness of the first sub-lower waveguide layer 221 is 1: 5-5: 1. if the ratio of the thickness of the second sub-lower waveguide layer 222 to the thickness of the first sub-lower waveguide layer 221 is less than 1:5, the thickness of the first sub-lower waveguide layer 221 is too thick, which causes process waste; if the ratio of the thickness of the second sub-lower waveguide layer 222 to the thickness of the first sub-lower waveguide layer 221 is greater than 5:1, the ability to improve the confinement of the light field is weak.
In one embodiment, the dimension of each second refractive index adjuster 270 along the light emitting direction of the semiconductor light emitting structure is smaller than λ/2n 2 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 2 Is of a second refractive indexThe refractive index of the adjuster 270.
In one embodiment, the spacing between adjacent second refractive index adjustment members 270 is less than λ/2n 3 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 3 Is the refractive index of the first sub-lower waveguide layer 221.
In one embodiment, the shape of the second refractive index adjuster 270 includes a truncated cone shape, a square truncated cone shape, or a stripe shape.
In one embodiment, the plurality of second refractive index adjusting members 270 are uniformly distributed in the light emitting direction of the semiconductor light emitting structure.
In another embodiment, the plurality of second refractive index adjustment members 270 are unevenly distributed.
In another embodiment, the number of second refractive index adjuster 270 increases along the light emitting direction of the semiconductor light emitting structure. The advantages are that: the light field distribution and the electric injection distribution in the semiconductor light-emitting structure are adjusted, the heat dissipation performance of the semiconductor light-emitting structure is enhanced, and the electro-optical conversion efficiency of the semiconductor light-emitting structure is further improved.
In one embodiment, the material of the lower waveguide layer 220 comprises Al doped with conductive ions x Ga 1-x As, where x is 0-0.45, in one embodiment x is greater than zero and less than or equal to 0.45.
In one embodiment, the doping concentration of the first sub-lower waveguide layer 221 is greater than the doping concentration of the second sub-lower waveguide layer 222. The advantages are that: the conductivity of the lower waveguide layer 220 is improved, and the resistance of the semiconductor light emitting structure is reduced; the doping concentration of the second sub-lower waveguide layer 222 is relatively small so that the absorption loss of light by the conductive ions in the second sub-lower waveguide layer 222 is small.
In one embodiment, the doping concentration of the first sub-lower waveguide layer 221 is 2 to 1000 times, for example 10 times, 100 times, 500 times or 1000 times, the doping concentration of the second sub-lower waveguide layer 222.
In one embodiment, the doping concentration of the first sub-lower waveguide layer 221 is x 10 17 atom/cm 3 ~1×10 20 atom/cm 3 . The doping concentration of the second sub-lower waveguide layer 222 is 10 15 atom/cm 3 ~1×10 18 atom/cm 3 。
In this embodiment, the semiconductor light emitting structure further includes: and a contact layer 250 on a side surface of the second sub-upper waveguide layer 242 facing away from the first sub-upper waveguide layer 241, the first refractive index adjuster 260 further extending into the contact layer 250.
In this embodiment, the semiconductor light emitting structure further includes: a front electrode layer (not shown), wherein the front electrode layer is positioned on one side of the contact layer 250 away from the semiconductor substrate layer 200, and the contact layer 250 is used for reducing the contact resistance between the upper waveguide layer 240 and the front electrode layer; and a back electrode layer on a side surface of the first sub-lower waveguide layer 221 facing away from the second sub-lower waveguide layer 222.
In other embodiments, no contact layer may be provided.
Example 4
The embodiment provides a method for manufacturing a semiconductor light-emitting structure, which comprises the following steps: providing a semiconductor substrate layer; forming a lower waveguide layer on one side surface of the semiconductor substrate layer; the lower waveguide layer comprises a first sub lower waveguide layer and a second sub lower waveguide layer positioned on one side of the first sub lower waveguide layer away from the semiconductor substrate layer; forming an active layer on a side of the lower waveguide layer facing away from the semiconductor substrate layer; the step of forming the upper waveguide confinement structure on one side of the active layer is: forming an upper waveguide confinement structure on a side of the active layer facing away from the semiconductor substrate layer; the step of forming the upper waveguide confinement structure includes: forming an upper waveguide layer, the step of forming the upper waveguide layer comprising: forming a first sub-upper waveguide layer; forming a second sub-upper waveguide layer on one side of the first sub-upper waveguide layer away from the active layer; forming a plurality of first refractive index adjusting parts which are arranged at intervals in the second sub-upper waveguide layer, wherein the first refractive index adjusting parts do not extend to the first sub-upper waveguide layer, and the refractive index of the first refractive index adjusting parts is smaller than that of the second sub-upper waveguide layer; the preparation method of the semiconductor light-emitting structure further comprises the following steps: removing the semiconductor substrate layer after forming the upper waveguide confinement structure; after the semiconductor substrate layer is removed, a plurality of second refractive index adjusting parts are formed in the first sub-lower waveguide layer, and the second refractive index adjusting parts do not extend into the second sub-lower waveguide layer, and the refractive index of the second refractive index adjusting parts is smaller than that of the first sub-lower waveguide layer.
Referring to fig. 11, a semiconductor substrate layer 200 is provided; forming a lower waveguide layer 220 on one side surface of the semiconductor substrate layer 200; the lower waveguide layer 220 includes a first sub-lower waveguide layer 221 and a second sub-lower waveguide layer 222 located on a side of the first sub-lower waveguide layer 221 facing away from the semiconductor substrate layer 200; forming an active layer 230 on a side of the lower waveguide layer 220 facing away from the semiconductor substrate layer 200; forming the upper waveguide layer 240, the step of forming the upper waveguide layer 240 includes: forming a first sub-upper waveguide layer 241; a second sub-upper waveguide layer 242 is formed on a side of the first sub-upper waveguide layer 241 facing away from the active layer 230.
In this embodiment, the method further includes: a contact layer 250 is formed on the side of the second sub-upper waveguide layer 242 facing away from the first sub-upper waveguide layer 241.
Referring to fig. 12, a plurality of first refractive index adjusters 260 are formed in the second sub-upper waveguide layer 242 to be spaced apart, and the first refractive index adjusters 260 do not extend to the first sub-upper waveguide layer 241, and the refractive index of the first refractive index adjusters 260 is smaller than that of the second sub-upper waveguide layer 242.
In this embodiment, in the step of forming the first refractive index adjuster 260, the first refractive index adjuster 260 also extends into the contact layer 250.
Referring to fig. 13, after the upper waveguide confinement structure is formed, the semiconductor substrate layer 200 is removed.
Referring to fig. 14, after the semiconductor substrate layer 200 is removed, a plurality of second refractive index adjusters 270 are formed in the first sub-lower waveguide layer 221, and the second refractive index adjusters 270 do not extend into the second sub-lower waveguide layer 222, and the refractive index of the second refractive index adjusters 270 is smaller than that of the first sub-lower waveguide layer 221.
In this embodiment, the method further includes: forming a front electrode layer (not shown), wherein the front electrode layer is positioned on one side of the contact layer 250 away from the semiconductor substrate layer 200, and the contact layer 250 is used for reducing the contact resistance between the upper waveguide layer 240 and the front electrode layer; a back electrode layer is formed on a side surface of the first sub-lower waveguide layer 221 facing away from the second sub-lower waveguide layer 222.
In other embodiments, no contact layer may be provided.
Example 5
The embodiment also provides a packaging module, including: a heat sink; the semiconductor light emitting structure of embodiment 1 or embodiment 3; the semiconductor light-emitting structure is positioned on the heat sink; the upper waveguide layer is located between the active layer and the heat sink. The front electrode layer is welded with the heat sink.
Comparative example
The comparative example provides a semiconductor light emitting structure comprising: a semiconductor substrate layer 11; a lower confinement layer 12 on the semiconductor substrate layer 11; a lower waveguide layer 13 located on the lower confinement layer 12; an active layer 14 on the lower waveguide layer; an upper waveguide layer 15 on the active layer 14; an upper confinement layer 16 on the upper waveguide layer 15; a contact layer 17 located on the upper confinement layer 16.
Fig. 15 shows the optical field distribution curve and the refractive index curve of the semiconductor light emitting structure of the comparative example, in which the horizontal axis in fig. 15 shows the position in the epitaxial thickness direction, and the horizontal axis shows the semiconductor substrate layer 11, the lower confinement layer 12, the lower waveguide layer 13, the active layer 14, the upper waveguide layer 15, the upper confinement layer 16, and the contact layer 17 in this order from left to right.
The curve L1 in fig. 15 is the light field distribution in the semiconductor light emitting structure of comparative example 1, and the curve L2 is the refractive index of each film layer in the semiconductor light emitting structure.
In the comparative example, the refractive index difference between the lower confinement layer 12 and the lower waveguide layer 13 is small, less than 1, and the light field confinement ability is weak. The refractive index difference between the upper confinement layer 16 and the upper waveguide layer 15 is small, less than 1, and the light field confinement capability is weak. As shown in fig. 15, the optical fields (such as in the virtual coil) in the lower confinement layer 12 and the upper confinement layer 16 are still strong, the carriers in this region have more absorption loss to light, and the electro-optical conversion efficiency of the semiconductor light emitting structure is poor.
Fig. 16 is a light field distribution curve and a refractive index curve of the semiconductor light emitting structure of embodiment 1. The curve L11 in fig. 16 is the light field distribution in the semiconductor light emitting structure of embodiment 1, and the curve L21 is the refractive index of each film layer in the semiconductor light emitting structure. In fig. 16, the horizontal axis represents the position in the epitaxial thickness direction, and the horizontal axis represents the semiconductor substrate layer 100, the lower confinement layer 110, the lower waveguide layer 120, the active layer 130, the first sub-upper waveguide layer 141, the second sub-upper waveguide layer 142, and the composite layer and the contact layer 150 of the first refractive index adjuster 160 in this order from left to right. As can be seen from fig. 16, the average refractive index of the composite layer of the second sub-upper waveguide layer 142 and the first refractive index adjuster 160 is smaller than that of the first sub-upper waveguide layer 141, and the refractive index of the first sub-upper waveguide layer 141 is greatly different from that of the composite layer of the second sub-upper waveguide layer 142 and the first refractive index adjuster 160. And the average refractive index of the composite layer of the second sub-upper waveguide layer 142 and the first refractive index adjuster 160 is smaller than that of the upper confinement layer in the comparative example. In embodiment 1, the optical field is limited by the composite layer of the second sub-upper waveguide layer 142 and the first refractive index adjuster 160, and the optical field on the side of the active layer 130 facing away from the semiconductor substrate layer 100 hardly penetrates into the composite layer of the second sub-upper waveguide layer 142 and the first refractive index adjuster 160.
Fig. 17 is a light field distribution curve and a refractive index curve of the semiconductor light emitting structure of embodiment 3. Curve L12 in fig. 17 is the light field distribution in the semiconductor light emitting structure of embodiment 3, and curve L22 is the refractive index of each film layer in the semiconductor light emitting structure. In fig. 17, the horizontal axis represents the position in the epitaxial thickness direction, and the horizontal axis represents the composite layer of the first sub-lower waveguide layer 221 and the second refractive index adjuster 270, the second sub-lower waveguide layer 222, the active layer 230, the first sub-upper waveguide layer 241, the second sub-upper waveguide layer 242, and the composite layer of the first refractive index adjuster 260, and the contact layer 250 in this order from left to right. As can be seen from fig. 17, the average refractive index of the composite layer of the second sub-upper waveguide layer 242 and the first refractive index adjuster 260 is smaller than that of the first sub-upper waveguide layer 241, and the refractive index of the first sub-upper waveguide layer 241 is greatly different from that of the composite layer of the second sub-upper waveguide layer 242 and the first refractive index adjuster 260. And the average refractive index of the composite layer of the second sub-upper waveguide layer 242 and the first refractive index adjuster 260 is smaller than that of the upper confinement layer in the comparative example. The average refractive index of the composite layer of the first sub-lower waveguide layer 221 and the second refractive index adjuster 270 is smaller than the refractive index of the second sub-lower waveguide layer 222. The refractive index of the second sub-lower waveguide layer 222 is greatly different from the average refractive index of the composite layers of the first sub-lower waveguide layer 221 and the second refractive index adjuster 270. In embodiment 3, the composite layer of the first sub-lower waveguide layer 221 and the second refractive index adjuster 270 has a strong confinement ability to the optical field, and the optical field on the side of the active layer 230 facing the semiconductor substrate layer 100 hardly penetrates into the composite layer of the first sub-lower waveguide layer 221 and the second refractive index adjuster 270. The composite layer of the second sub-upper waveguide layer 242 and the first refractive index adjuster 260 has a strong confinement ability to the optical field, and the optical field on the side of the active layer 230 facing away from the semiconductor substrate layer 100 hardly penetrates into the composite layer of the second sub-upper waveguide layer 242 and the first refractive index adjuster 260.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (23)
1. A semiconductor light emitting structure, comprising:
an active layer;
an upper waveguide confinement structure located on one side of the active layer;
the upper waveguide confinement structure includes: the upper waveguide layer comprises a first sub upper waveguide layer and a second sub upper waveguide layer, the second sub upper waveguide layer is positioned on one side of the first sub upper waveguide layer, which is away from the active layer, and the ratio of the thickness of the second sub upper waveguide layer to the thickness of the first sub upper waveguide layer is 1: 5-5: 1, a step of; the first refractive index adjusting pieces are arranged in the second sub-upper waveguide layer at intervals, the first refractive index adjusting pieces do not extend into the first sub-upper waveguide layer, and the refractive index of the first refractive index adjusting pieces is smaller than that of the second sub-upper waveguide layer;
Wherein the dimension of each first refractive index adjusting member along the light emitting direction of the semiconductor light emitting structure is smaller than lambda/2 n, and the interval between adjacent first refractive index adjusting members is smaller than lambda/2 n 1 Lambda is the light emitting wavelength of the semiconductor light emitting structure, n is the refractive index of the first refractive index adjuster, n 1 Is the refractive index of the waveguide layer on the second sub.
2. The semiconductor light emitting structure of claim 1, wherein the first refractive index adjuster has a refractive index of less than 2.5 for light having a wavelength in a range of 500nm to 1200 nm.
3. The semiconductor light emitting structure according to claim 1, wherein an absorption coefficient of the first refractive index adjuster for light having a wavelength in a range of 500nm to 1200nm is less than or equal to 0.03.
4. The semiconductor light emitting structure of claim 1 wherein the material of the first refractive index adjuster comprises indium tin oxide, silicon nitride, aluminum oxide, caF 2 、HfO 2 MgO or ZrO 2 。
5. The semiconductor light emitting structure of claim 1, wherein a total thickness of the upper waveguide layer is 0.1-5 microns.
6. The semiconductor light emitting structure of claim 1, wherein the shape of the first refractive index adjuster comprises a truncated cone shape, a square truncated cone shape, or a stripe shape.
7. The semiconductor light emitting structure of claim 1, wherein the plurality of first refractive index adjustment members are uniformly distributed in a light emitting direction of the semiconductor light emitting structure.
8. The semiconductor light emitting structure of claim 1, wherein the plurality of first refractive index adjustment members are unevenly distributed.
9. The semiconductor light emitting structure of claim 8, wherein the number of first refractive index adjustment members increases progressively along a light exit direction of the semiconductor light emitting structure.
10. The semiconductor light emitting structure of claim 1, wherein a doping concentration of the second sub-upper waveguide layer is greater than a doping concentration of the first sub-upper waveguide layer.
11. The semiconductor light emitting structure of claim 1 wherein the material of the upper waveguide layer comprises conductive ion doped Al x Ga 1-x As, wherein x is 0 to 0.45.
12. The semiconductor light emitting structure of claim 1, further comprising: the contact layer is positioned at one side of the second sub-upper waveguide layer, which is away from the first sub-upper waveguide layer, and is in contact with the second sub-upper waveguide layer; the first refractive index adjuster also extends into the contact layer.
13. The semiconductor light emitting structure of claim 1, further comprising: the semiconductor substrate layer is positioned on one side of the active layer, which is away from the upper waveguide limiting structure; a lower confinement layer located between the semiconductor substrate layer and the active layer;
a lower waveguide layer located between the lower confinement layer and the active layer.
14. The semiconductor light emitting structure of claim 1, further comprising: a lower waveguide layer positioned on a side of the active layer facing away from the upper waveguide confinement structure; the lower waveguide layer comprises a first sub lower waveguide layer and a second sub lower waveguide layer positioned between the first sub lower waveguide layer and the active layer; a plurality of second refractive index adjustment members located in the first sub-lower waveguide layer; the side of the lower waveguide layer facing away from the active layer is not provided with a semiconductor substrate layer and a lower confinement layer.
15. The semiconductor light emitting structure of claim 14, wherein the second refractive index adjuster has a refractive index of less than 2.5 for light having a wavelength in a range of 500nm to 1200 nm.
16. The semiconductor light emitting structure of claim 14 wherein the material of the second refractive index adjuster comprises indium tin oxide, silicon nitride or aluminum oxide, caF 2 、HfO 2 MgO or ZrO 2 。
17. The semiconductor light emitting structure of claim 14, wherein a dimension of each of the second refractive index adjuster along a light emitting direction of the semiconductor light emitting structure is smaller than λ/2n 2 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 2 The refractive index of the second refractive index adjuster.
18. The semiconductor light emitting structure of claim 14, wherein a spacing between adjacent second refractive index adjustment members is less than λ/2n 3 Lambda is the light-emitting wavelength of the semiconductor light-emitting structure, n 3 Is the refractive index of the first sub-lower waveguide layer.
19. A method of manufacturing a semiconductor light emitting structure according to any one of claims 1 to 18, comprising:
forming an active layer;
forming an upper waveguide confinement structure on one side of the active layer;
the step of forming the upper waveguide confinement structure includes: forming an upper waveguide layer, the step of forming the upper waveguide layer comprising: forming a first sub-upper waveguide layer; forming a second sub-upper waveguide layer on one side of the first sub-upper waveguide layer away from the active layer; and forming a plurality of first refractive index adjusting parts which are arranged at intervals in the second sub-upper waveguide layer, wherein the first refractive index adjusting parts do not extend to the first sub-upper waveguide layer, and the refractive index of the first refractive index adjusting parts is smaller than that of the second sub-upper waveguide layer.
20. The method of manufacturing a semiconductor light emitting structure according to claim 19, further comprising: forming a contact layer on one side of the second sub-upper waveguide layer away from the active layer; in the step of forming the first refractive index adjuster, the first refractive index adjuster also extends into the contact layer.
21. The method of manufacturing a semiconductor light emitting structure according to claim 19, further comprising: providing a semiconductor substrate layer; forming a lower confinement layer on one side of the semiconductor substrate layer; forming a lower waveguide layer on one side of the lower confinement layer away from the semiconductor substrate layer;
the step of forming the active layer is: forming an active layer on a side of the lower waveguide layer facing away from the semiconductor substrate layer; the step of forming the upper waveguide confinement structure on one side of the active layer is: an upper waveguide confinement structure is formed on a side of the active layer facing away from the semiconductor substrate layer.
22. The method of manufacturing a semiconductor light emitting structure according to claim 19, further comprising: providing a semiconductor substrate layer; forming a lower waveguide layer on one side surface of the semiconductor substrate layer; the lower waveguide layer comprises a first sub lower waveguide layer and a second sub lower waveguide layer positioned on one side of the first sub lower waveguide layer away from the semiconductor substrate layer;
The step of forming the active layer is: forming an active layer on a side of the lower waveguide layer facing away from the semiconductor substrate layer; the step of forming the upper waveguide confinement structure on one side of the active layer is: forming an upper waveguide confinement structure on a side of the active layer facing away from the semiconductor substrate layer;
the preparation method of the semiconductor light-emitting structure further comprises the following steps: removing the semiconductor substrate layer after forming the upper waveguide confinement structure; after the semiconductor substrate layer is removed, a plurality of second refractive index adjusting parts are formed in the first sub-lower waveguide layer, and the second refractive index adjusting parts do not extend into the second sub-lower waveguide layer, and the refractive index of the second refractive index adjusting parts is smaller than that of the first sub-lower waveguide layer.
23. A package module, comprising:
a heat sink;
the semiconductor light emitting structure of any one of claims 1 to 18; the semiconductor light-emitting structure is positioned on the heat sink; the upper waveguide layer is located between the active layer and the heat sink.
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