CN116526290A - Bulk Bragg grating and slow axis collimating lens integrated semiconductor laser and component - Google Patents
Bulk Bragg grating and slow axis collimating lens integrated semiconductor laser and component Download PDFInfo
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- CN116526290A CN116526290A CN202310337530.4A CN202310337530A CN116526290A CN 116526290 A CN116526290 A CN 116526290A CN 202310337530 A CN202310337530 A CN 202310337530A CN 116526290 A CN116526290 A CN 116526290A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
Abstract
The invention discloses a bulk Bragg grating and slow axis collimating lens integrated semiconductor laser and an assembly. The laser comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis lens and grating integrated piece, a focusing lens and an optical fiber. The fast axis collimating lens, the slow axis lens and the grating integrated piece, the focusing lens and the optical fiber are distributed along the light emergent direction of the semiconductor laser chip in sequence. The fast axis collimating lens is a cylindrical lens arranged horizontally, the slow axis lens and the grating integrated piece are cylindrical lenses arranged vertically, the convex side of the slow axis lens and the grating integrated piece is adjacent to the focusing lens, and the convex side of the fast axis collimating lens is adjacent to the plane side of the slow axis lens and the grating integrated piece. The invention effectively solves the problems of complicated and inconvenient adjustment caused by the need of independent adjustment of each optical element in the traditional semiconductor laser structure and the problem of easy burning of the optical element when the film plating effect on the interface of the adjacent optical element is poor or pollution is caused.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a bulk Bragg grating and slow axis collimating lens integrated semiconductor laser and a component.
Background
The information disclosed in the background of the invention is only for enhancement of understanding of the general background of the invention and is not necessarily to be taken as an admission or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
The semiconductor laser has the advantages of high efficiency, small volume, light weight, long service life, high reliability, easy modulation, low price and the like, and is widely applied to the fields of industry, medical treatment, communication, military and the like. The breakthrough progress is made in the 90 s of the 20 th century, and the sign is that the output power of the semiconductor laser is obviously increased, the foreign kilowatt-level high-power semiconductor laser is commercialized, and the output of the domestic sample device is above 600W.
The semiconductor laser has a certain divergence angle in the X-axis/Y-axis direction after being excited to emit light, wherein the X-axis divergence angle is large and is called a fast axis direction, and the Y-axis divergence angle is small and is called a slow axis direction. In practical applications it is desirable to use lenses to focus the fast/slow axis direction spots for coupling into the fiber.
The conventional method of semiconductor laser packaging is to couple the collimated and focused light emitted by the semiconductor laser chip into the fiber output. However, as the driving current of the laser increases, the emission spectrum line can be widened, and as the temperature is accumulated in the working process, the output spectrum of the laser can be subjected to red shift, the instability of the output wavelength limits the application of the laser in the fields of solid laser pumping, medical instruments and the like, an external cavity is generally formed between a Volume Bragg Grating (VBG) and a semiconductor laser chip in the industry, the output spectrum width of the laser is compressed by using an external cavity feedback method, the temperature drift coefficient is small, and the output spectrum range is stable.
The optical components need to be adjusted independently, and the procedure is complex; and each optical piece has two interfaces, the interfaces need to be coated with films separately, and the film coating effect is poor or pollution easily causes burning of the optical pieces, thereby affecting the performance of the whole laser. For example, chinese patent application No. 201721230434.6 discloses a wavelength-stabilized semiconductor laser in which each optical element in the semiconductor structure serves only one function and requires individual tuning. In summary, the existing semiconductor laser has more optical parts, and each optical part needs to be manufactured, regulated and coated separately, so that inconvenience in regulation and the like exists, and the risk of burning out the laser due to uneven coating or pollution exists.
Disclosure of Invention
The invention provides a bulk Bragg grating and slow axis collimating lens integrated semiconductor laser and a component, which effectively solve the problems of complicated and inconvenient adjustment caused by the need of independent adjustment of each optical element in the traditional semiconductor laser structure and the problem of easy burning of the optical element when the coating effect on the interface of the adjacent optical element is poor or pollution is caused. In order to achieve the above purpose, the present invention discloses the following technical solutions.
First, the invention discloses a bulk Bragg grating and slow axis collimating lens integrated semiconductor laser, comprising: the laser comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis lens and grating integrated piece, a focusing lens and an optical fiber. Wherein: the fast axis collimating lens, the slow axis lens and the grating integrated part, the focusing lens and the optical fiber are sequentially distributed along the light emergent direction of the semiconductor laser chip, the fast axis collimating lens is a cylindrical lens arranged horizontally, the slow axis lens and the grating integrated part are cylindrical lenses arranged vertically, the convex side of the slow axis lens and the grating integrated part are adjacent to the focusing lens, and the convex side of the fast axis collimating lens is adjacent to the plane side of the slow axis lens and the grating integrated part.
Next, the present invention discloses a bulk bragg grating and slow axis collimating lens integrated semiconductor laser assembly comprising: the laser comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis lens and grating integrated piece, a focusing lens, an optical fiber and a reflecting mirror. Wherein: the fast axis collimating lens, the slow axis lens and the grating integrated piece are sequentially distributed along the light emergent direction of the semiconductor laser chip to form a component. The components are arranged in parallel, and the front end of the slow axis lens and the grating integrated piece of each component is provided with one reflecting mirror. The fast axis collimating lens is a cylindrical lens arranged horizontally, the slow axis lens and the grating integrated piece are cylindrical lenses arranged vertically, the convex side of the slow axis lens and the grating integrated piece is adjacent to the reflecting mirror, and the convex side of the fast axis collimating lens is adjacent to the plane side of the slow axis lens and the grating integrated piece. The focusing lens is arranged on the reflecting light path of the reflecting mirror, and the optical fibers are arranged on the emergent light path of the focusing lens, so that laser light of a plurality of groups of semiconductor laser chips is simultaneously concentrated on one optical fiber.
Further, the light path emitted by the reflecting mirror, the slow axis lens and the grating integrated piece is 45 degrees.
Further, both sides or one side of the reflecting mirror are coated with films. Preferably, the reflectivity of the coating is greater than 99%.
Further, the focal length of the fast axis collimating lens is 300-500 μm, and the fast axis collimating lens is mainly used for collimating the divergence angle of the fast axis direction of the light beam.
Further, the thickness of the slow axis lens and grating integrated piece is between 2 and 3mm, so that the production requirement can be met, the thickness can be reduced as much as possible, and heat absorption of the slow axis lens and grating integrated piece is reduced.
Optionally, the material of the slow axis lens and the grating integrated piece is glass or the like.
Further, the focusing lens includes a plano-convex lens or an aspherical lens, which mainly plays a role in focusing the laser beam. Therefore, the focusing lens is preferably an aspheric lens, so that the influence of edge light can be eliminated better, and focusing can be performed better.
Further, the optical fiber is a multimode optical fiber or the like. Optionally, the core diameter of the optical fiber is 105-400 μm. Preferably, one end of the fiber is fed with an SMA905 or FC output stud.
Furthermore, the semiconductor laser chip, the fast axis collimating lens, the slow axis lens and the grating integrated piece, the focusing lens and the input end face of the optical fiber are all provided with high-permeability films. Preferably, the high-permeability film has a reflectance of greater than 99%.
Further, the semiconductor laser chip is fixed on a copper gold-plated heat sink, so that good heat dissipation is performed in the working process, and the stability and the service life extension of the chip are facilitated.
Compared with the prior art, the invention has at least the following beneficial effects: the invention sets a slow axis lens and grating integral piece between the fast axis collimating lens and the focusing lens, the fast axis collimating lens can collimate the light emitted by the semiconductor laser chip in the fast axis direction (X direction) so as to keep the light in the fast axis horizontal as much as possible. The slow axis lens and grating integrated piece not only can perform the function of collimating the slow axis divergence angle, but also is photosensitive glass, and the permanent change of the refractive index of the photosensitive glass (PTR) with some special components is caused by the thermal processing function of ultraviolet light, so that internal refractive index distribution according to a certain rule is formed in the PTR, an external cavity resonant cavity is formed together with the rear cavity surface of a semiconductor laser chip, and the wavelength selectivity of output laser is realized by utilizing the reflection function of a periodic grating in a Volume Bragg Grating (VBG), and finally the laser output with stable wavelength with narrow spectrum width is realized. The parallel light passes through the focusing lens after the collimation in the fast axis direction and the slow axis direction to realize the focusing of light spots, and finally the light beam is output through the optical fiber, so that the problems of complicated and inconvenient adjustment caused by the need of independent adjustment of each optical element in the traditional semiconductor laser structure and the problem of burning out of the optical element caused by poor film coating effect or pollution on the interface of the adjacent optical elements are effectively solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention.
Fig. 1 is a schematic diagram of a bulk bragg grating and slow axis collimating lens integrated semiconductor laser in the following embodiment.
Fig. 2 is a schematic diagram of a bulk bragg grating and slow axis collimating lens integrated semiconductor laser assembly in another embodiment.
The reference numerals in the above figures represent respectively: the laser comprises a 1-semiconductor laser chip, a 2-fast axis collimating lens, a 3-slow axis lens and grating integrated piece, a 4-focusing lens, a 5-optical fiber and a 6-reflecting mirror.
Detailed Description
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the invention. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
For convenience of description, the words "upper", "lower", "left" and "right" in the present invention, if they mean only that the directions are consistent with the upper, lower, left, and right directions of the drawings per se, and do not limit the structure, only for convenience of description and simplification of the description, but do not indicate or imply that the apparatus or element to be referred to needs to have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. In addition, any methods and materials similar or equivalent to those described herein can be used in the methods of the present invention.
Referring to fig. 1, an example of a bulk bragg grating and slow axis collimating lens integrated semiconductor laser includes: the laser comprises a semiconductor laser chip 1, a fast axis collimating lens 2, a slow axis lens and grating integrated piece 3, a focusing lens 4 and an optical fiber 5. Wherein:
the semiconductor laser chip 1 is fixed on a copper gold-plated heat sink so as to perform good heat dissipation in the working process, thereby being beneficial to the stability of the chip and the extension of the service life of the chip. The fast axis collimating lens 2, the slow axis lens and the grating integrated part 3, the focusing lens 4 and the optical fiber 5 are sequentially distributed from left to right along the light emergent direction of the semiconductor laser chip 1, the fast axis collimating lens 2 is a cylindrical lens arranged horizontally, the slow axis lens and the grating integrated part 3 are cylindrical lenses arranged vertically, the convex side of the slow axis lens and the grating integrated part 3 is adjacent to the focusing lens 4, and the convex side of the fast axis collimating lens 2 is adjacent to the plane side of the slow axis lens and the grating integrated part 3.
The focal length of the fast axis collimating lens 2 is arbitrarily selectable between 300 μm and 500 μm, such as 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, etc., and the fast axis collimating lens 2 can collimate the light emitted from the semiconductor laser chip 1 in the fast axis direction (X direction) so that the light in the fast axis is kept as horizontal as possible. The thickness of the slow axis lens and grating integrated part 3 is arbitrarily selected from 2-3 mm, such as 2mm, 2.5mm, 3mm and the like.
The slow axis lens and grating integrated piece 3 not only can perform the function of collimating the slow axis divergence angle, but also is photosensitive glass, the refractive index of the photosensitive glass (PTR) is permanently changed through the thermal processing function of ultraviolet light, so that internal refractive index distribution according to a certain rule is formed inside the PTR, an external cavity resonant cavity is formed together with the rear cavity surface of a semiconductor laser chip, the wavelength selectivity of output laser is realized by utilizing the reflection function of a periodic grating in a Volume Bragg Grating (VBG), the laser output with stable wavelength of narrow spectrum width is finally realized, and the problems that the adjustment is complicated and inconvenient due to the fact that each optical piece needs to be independently adjusted in the traditional semiconductor laser structure and the problem that the optical piece is easy to burn out when the film plating effect on the interface of the adjacent optical piece is poor or polluted are effectively solved.
The focusing lens 4 is an aspheric lens, so that the influence of marginal light can be eliminated better, and focusing can be performed better. The optical fiber 5 is a multimode optical fiber, and the core diameter of the multimode optical fiber is arbitrarily selected from 105-400 μm, such as 105 μm, 200 μm, 400 μm, etc. The collimated parallel light passes through the focusing lens 4 to focus light spots in the directions of the fast axis and the slow axis, and the final light beam is output through the optical fiber 5.
Referring to fig. 2, an example bulk bragg grating and slow axis collimating lens integrated semiconductor laser assembly includes: the laser comprises a semiconductor laser chip 1, a fast axis collimating lens 2, a slow axis lens and grating integrated piece 3, a focusing lens 4, an optical fiber 5 and a reflecting mirror 6. Wherein:
the fast axis collimating lens 2, the slow axis lens and the grating integrated piece 3 are distributed along the light emergent direction of the semiconductor laser chip 1 in sequence to form a component. The components are arranged in parallel, and the front end of the slow axis lens and grating integrated piece 3 of each component is provided with one reflecting mirror 6.
The fast axis collimating lens 2 is a cylindrical mirror arranged horizontally, the slow axis lens and the grating integrated piece 3 are cylindrical mirrors arranged vertically, the convex side of the slow axis lens and the grating integrated piece 3 is adjacent to the reflecting mirror 6, and the convex side of the fast axis collimating lens 2 is adjacent to the plane side of the slow axis lens and the grating integrated piece 3. The focusing lens 4 is disposed on the reflection light path of the reflecting mirror 6, and the optical fiber 5 is disposed on the outgoing light path of the focusing lens 4, so that the laser light of a plurality of groups of the semiconductor laser chips 1 is simultaneously concentrated into one optical fiber 5. The semiconductor laser chip 1, the fast axis collimating lens 2, the slow axis lens and grating integrated unit 3, the focusing lens 4, and the optical fiber 5 of the present embodiment are the same as those of the previous embodiment in terms of specifications, etc., except that the present embodiment finally concentrates several groups of laser light into one optical fiber 5 by using the reflecting mirror 6, thereby realizing high-power laser output. For this purpose, the angle between the mirror 6 and the optical path emerging from the slow axis lens and grating body 3 is chosen to be 45 °.
In another embodiment, the reflective mirror 6 in the above embodiment is coated on both sides or on one side, and the reflectivity of the coated film is greater than 99%. The plating film can be made of gold, silver, aluminum, chromium and the like.
In another embodiment, the focusing lens 4 in the above embodiment is a plano-convex lens, and one end of the optical fiber 5 is turned to have an SMA905 or an FC output head.
In another embodiment, the semiconductor laser chip 1, the fast axis collimating lens 2, the slow axis lens and grating integrated unit 3, the focusing lens 4, and the input end face of the optical fiber 5 in the above embodiment all have a high-transmittance film, the reflectivity of the high-transmittance film is greater than 99%, and the material of the high-transmittance film may be selected from magnesium oxide, zirconium oxide, silicon dioxide, and the like.
Finally, it should be noted that any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention. While the foregoing description of the embodiments of the present invention has been presented in conjunction with the drawings, it should be understood that it is not intended to limit the scope of the invention, but rather, it is intended to cover all modifications or variations within the scope of the invention as defined by the claims of the present invention.
Claims (10)
1. The utility model provides a volume Bragg grating and slow axis collimating lens integrated semiconductor laser which characterized in that includes: the device comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis lens and grating integrated piece, a focusing lens and an optical fiber; wherein: the fast axis collimating lens, the slow axis lens and the grating integrated part, the focusing lens and the optical fiber are sequentially distributed along the light emergent direction of the semiconductor laser chip, the fast axis collimating lens is a cylindrical lens arranged horizontally, the slow axis lens and the grating integrated part are cylindrical lenses arranged vertically, the convex side of the slow axis lens and the grating integrated part are adjacent to the focusing lens, and the convex side of the fast axis collimating lens is adjacent to the plane side of the slow axis lens and the grating integrated part.
2. The utility model provides a volume Bragg grating and slow axis collimating lens integration semiconductor laser subassembly which characterized in that includes: the device comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis lens and grating integrated piece, a focusing lens, an optical fiber and a reflecting mirror; wherein: the fast axis collimating lens, the slow axis lens and the grating integrated piece are sequentially distributed along the light emergent direction of the semiconductor laser chip to form a component; the groups of the components are arranged in parallel, and the front end of the slow axis lens and the grating integrated piece of each group of the components is provided with one reflecting mirror; the fast axis collimating lens is a cylindrical lens arranged horizontally, the slow axis lens and grating integrated piece is a cylindrical lens arranged vertically, the convex side of the slow axis lens and grating integrated piece is adjacent to the reflecting mirror, and the convex side of the fast axis collimating lens is adjacent to the plane side of the slow axis lens and grating integrated piece; the focusing lens is arranged on the reflecting light path of the reflecting mirror, and the optical fiber is arranged on the emergent light path of the focusing lens.
3. The bulk bragg grating and slow axis collimating lens integrated semiconductor laser assembly of claim 2, wherein the optical path of the light emitted by the mirror and slow axis lens and grating integrated piece is 45 °;
preferably, both sides or one side of the reflecting mirror are coated with films; preferably, the reflectivity of the coating is greater than 99%; optionally, the material of the coating film comprises any one of gold, silver, aluminum and chromium.
4. The bulk bragg grating and slow axis collimating lens integrated semiconductor laser or laser assembly of claim 1 or 2, wherein the fast axis collimating lens has a focal length of 300-500 μm.
5. The bulk bragg grating and slow axis collimating lens integrated semiconductor laser or laser assembly of claim 1 or 2, wherein the slow axis lens and grating integrated piece has a thickness of between 2 and 3 mm.
6. The bulk bragg grating and slow axis collimating lens integrated semiconductor laser or laser assembly of claim 1 or 2, wherein the slow axis lens and grating integrated piece is made of glass.
7. The bulk-bragg grating and slow-axis collimating lens integrated semiconductor laser or laser assembly of claim 1 or 2, wherein said focusing lens comprises a plano-convex lens or an aspheric lens; the focusing lens is preferably an aspherical lens.
8. The bulk-bragg-grating-and-slow-axis collimating-lens-integrated semiconductor laser or laser assembly of claim 1 or 2, wherein said optical fiber is a multimode optical fiber; optionally, the core diameter of the optical fiber is 105-400 μm; preferably, one end of the fiber is fed with an SMA905 or FC output stud.
9. The bulk bragg grating and slow axis collimating lens integrated semiconductor laser or laser assembly of claim 1 or 2, wherein the semiconductor laser chip, the fast axis collimating lens, the slow axis lens and grating integrated piece, the focusing lens, the input end face of the optical fiber all have high transmission films; preferably, the high-permeability film has a reflectivity of greater than 99%; optionally, the material of the high-permeability membrane comprises any one of magnesia, zirconia and silica.
10. The bulk bragg grating and slow axis collimating lens integrated semiconductor laser or laser assembly of claim 1 or 2, wherein the semiconductor laser chip is affixed to a copper gold plated heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310337530.4A CN116526290A (en) | 2023-03-31 | 2023-03-31 | Bulk Bragg grating and slow axis collimating lens integrated semiconductor laser and component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310337530.4A CN116526290A (en) | 2023-03-31 | 2023-03-31 | Bulk Bragg grating and slow axis collimating lens integrated semiconductor laser and component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116526290A true CN116526290A (en) | 2023-08-01 |
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