CN116525695A - Silicon detector and forming method - Google Patents

Silicon detector and forming method Download PDF

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Publication number
CN116525695A
CN116525695A CN202310634417.2A CN202310634417A CN116525695A CN 116525695 A CN116525695 A CN 116525695A CN 202310634417 A CN202310634417 A CN 202310634417A CN 116525695 A CN116525695 A CN 116525695A
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layer
electrode region
oxide
epitaxial layer
conductivity type
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CN202310634417.2A
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Inventor
王小艳
宗立超
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Priority to CN202310634417.2A priority Critical patent/CN116525695A/en
Publication of CN116525695A publication Critical patent/CN116525695A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a silicon detector and a forming method thereof, comprising the following steps: providing a substrate of a first conductivity type and an epitaxial layer, the epitaxial layer being located on a surface of the substrate; forming a first oxide layer and a second oxide layer on the surface of the epitaxial layer; forming field oxide on the surface and inside of the epitaxial layer, wherein the field oxide separates the first oxide layer and the second oxide layer; implanting ions into the epitaxial layer to form a first electrode region of a first conductivity type; and implanting ions into the epitaxial layer to form a second electrode region and an isolation layer of a second conductivity type, wherein the second electrode region and the isolation layer are respectively positioned at two sides of the field oxygen, and the isolation layer is positioned between the first electrode region and the field oxygen. According to the isolation layer formed by the invention, induced electrons on the surface of the second electrode area can move to the isolation layer, so that the induced electrons on the surface of the second electrode area are reduced, the leakage current from the second electrode area to the N-type epitaxial layer is reduced, and the dark current of the silicon detector is reduced.

Description

Silicon detector and forming method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a silicon detector and a forming method.
Background
In a conventional BSI silicon detector, X-rays are converted into light by a scintillator, then the light is incident on the silicon detector from the back, and generated photoelectrons are diffused to an active area on the front and then collected as an electrical signal.
Referring to fig. 1, a conventional silicon detector is formed by first forming an N-type substrate 110, then forming an N-type epitaxial layer 120 on the surface of the substrate 110, and then forming a first oxide layer 130 and a second oxide layer 140 on the surface of the epitaxial layer 120, wherein the first oxide layer 130 and the second oxide layer 140 are silicon dioxide films. Next, field oxide 150 is formed, and field oxide 150 separates first oxide layer 130 and second oxide layer 140. Next, referring to fig. 2, ions are implanted into the epitaxial layer through the first oxide layer 130 to form an N-type first electrode region 160; next, ions are implanted into the epitaxial layer through the second oxide layer 140 to form a P-type second electrode region 170, the first electrode region 160 and the second electrode region 170 being separated by a field oxide 150.
However, in the process of forming the P-type second electrode region 170 by implanting ions into the epitaxial layer through the second oxide layer 140, a small amount of non-mobile positive ions are trapped in the second oxide layer 140, and negative ions are formed on the surface of the second electrode region 170 by electrostatic induction, so that an induced electron layer is formed on the surface of the second electrode region 170, and the induced electron layer has the same conductivity type as that of the N-type epitaxial layer 120, resulting in communication of the second electrode region 170 with the N-type epitaxial layer 120, and formation of leakage current. Under the applied bias when using a silicon detector, a dark current is generated, which contains the reverse current of the PN junction and the leakage current generated by this induced electron layer.
Disclosure of Invention
The invention aims to provide a silicon detector and a forming method thereof, which can reduce leakage current of the silicon detector.
In order to achieve the above object, the present invention provides a silicon detector comprising:
a substrate of a first conductivity type and an epitaxial layer, the epitaxial layer being located on a surface of the substrate;
a first electrode region of a first conductivity type within the epitaxial layer and proximate to a surface of the epitaxial layer;
a second electrode region of a second conductivity type within the epitaxial layer and adjacent to a surface of the epitaxial layer, the first electrode region being separated from the second electrode region by field oxide, the second conductivity type and the first conductivity type being opposite conductivity types;
an isolation layer of a second conductivity type located between the first electrode region and the field oxide, the second electrode region and isolation layer being formed simultaneously;
a first oxide layer located on the surfaces of the first electrode region and the isolation layer; and
and the second oxide layer is positioned on the surface of the second electrode region, and the first oxide layer and the second oxide layer are separated by the field oxygen.
Optionally, in the silicon detector, the first conductivity type is N-type.
Optionally, in the silicon detector, the second conductivity type is P-type.
Optionally, in the silicon detector, the silicon detector further includes a plurality of through holes, a plurality of metal wires and an interlayer dielectric layer, wherein the interlayer dielectric layer is located on the surface of the epitaxial layer, the plurality of through holes are located on the surfaces of the first oxide layer and the second oxide layer respectively, the metal wires are located on the surfaces of the through holes, the through holes and the metal wires are located in the interlayer dielectric layer, and adjacent through holes are separated by the interlayer dielectric layer.
Optionally, in the silicon detector, the first oxide layer and the second oxide layer are both silicon dioxide.
The invention also provides a method for forming the silicon detector, which comprises the following steps:
providing a substrate of a first conductivity type and an epitaxial layer, wherein the epitaxial layer is positioned on the surface of the substrate;
forming a first oxide layer and a second oxide layer on the surface of the epitaxial layer;
forming field oxide on the surface and inside of the epitaxial layer, wherein the field oxide separates the first oxide layer and the second oxide layer;
implanting ions into the epitaxial layer through the first oxide layer to form a first electrode region of a first conductivity type; and
and simultaneously implanting ions into the epitaxial layer through the first oxide layer and the second oxide layer to respectively form a second electrode region and an isolation layer of a second conductivity type, wherein the second electrode region and the isolation layer are respectively positioned at two sides of the field oxide, and the isolation layer is positioned between the first electrode region and the field oxide.
Optionally, in the method for forming a silicon detector, after implanting ions into the epitaxial layer to form the second electrode region and the isolation layer of the second conductivity type, the method further includes: and forming a plurality of through holes, a plurality of metal wires and an interlayer dielectric layer, wherein the interlayer dielectric layer is positioned on the surface of the epitaxial layer, the through holes are respectively positioned on the surfaces of the first oxide layer and the second oxide layer, the metal wires are positioned on the surfaces of the through holes, the through holes and the metal wires are positioned in the interlayer dielectric layer, and the adjacent through holes are separated by the interlayer dielectric layer.
Optionally, in the method for forming a silicon detector, P ions are implanted into the epitaxial layer to form a first electrode region.
Optionally, in the method for forming a silicon detector, B ions are implanted into the epitaxial layer to form a second electrode region and an isolation layer.
Optionally, in the method for forming a silicon detector, a first oxide layer and a second oxide layer are formed on the surface of the epitaxial layer by depositing silicon dioxide.
In the silicon detector and the forming method, the conductivity type of the formed isolation layer is the same as that of the second electrode region, so that induced electrons on the surface of the second electrode region move to the isolation layer, thereby reducing leakage current from the second electrode region to the N-type epitaxial layer, and further reducing dark current of the silicon detector. And the isolation layer and the second electrode area are formed at the same time, so that no extra process step is needed, and no extra process time is needed to be wasted.
Drawings
FIGS. 1 and 2 are schematic diagrams of a prior art silicon detector formation process;
FIG. 3 is a flow chart of a method of forming a silicon detector according to an embodiment of the present invention;
FIGS. 4-7 are schematic diagrams of a process of forming a silicon detector according to an embodiment of the invention;
in the figure: 110-substrate, 120-epitaxial layer, 130-first oxide layer, 140-second oxide layer, 150-field oxide, 160-first electrode region, 170-second electrode region, 210-substrate, 220-epitaxial layer, 230-first oxide layer, 240-second oxide layer, 250-field oxide, 260-first electrode region, 270-second electrode region, 280-isolation layer, 291-via, 292-metal line, 293-inter-layer dielectric layer.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In the following, the terms "first," "second," and the like are used to distinguish between similar elements and are not necessarily used to describe a particular order or chronological order. It is to be understood that such terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein comprises a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method.
Referring to fig. 3, an embodiment of the present invention provides a method for forming a silicon detector, including:
s11: providing a substrate of a first conductivity type and an epitaxial layer, wherein the epitaxial layer is positioned on the surface of the substrate;
s12: forming a first oxide layer and a second oxide layer on the surface of the epitaxial layer;
s13: forming field oxide on the surface and inside of the epitaxial layer, wherein the field oxide separates the first oxide layer and the second oxide layer;
s14: implanting ions into the epitaxial layer through the first oxide layer to form a first electrode region of a first conductivity type; and
s15: and simultaneously implanting ions into the epitaxial layer through the first oxide layer and the second oxide layer to respectively form a second electrode region and an isolation layer of a second conductivity type, wherein the second electrode region and the isolation layer are respectively positioned at two sides of the field oxide, and the isolation layer is positioned between the first electrode region and the field oxide.
The first conductive type is N type, and the second conductive type is P type.
Specifically, referring to fig. 4, first, a substrate 210 is provided, the substrate 210 may be a wafer, and N-type ions are implanted into the substrate 210 to form an N-type substrate. Next, an N-type epitaxial layer 220 is formed on the surface of the substrate 210 by means of growth.
Next, an oxide layer, which may be silicon dioxide, is formed on the surface of the epitaxial layer 220 by deposition, and then the oxide layer is etched to form separate first and second oxide layers 230 and 240, with the surface of the epitaxial layer 220 exposed between the first and second oxide layers 230 and 240. Next, a field oxide 250 is formed inside and on the surface of the epitaxial layer 220 between the first oxide layer 230 and the second oxide layer 240, the field oxide 250 isolating the first oxide layer 230 from the second oxide layer 240, and the field oxide 250 being partially inside the epitaxial layer 220 and partially on the surface of the epitaxial layer 220.
Next, referring to fig. 5, N-type ions are implanted into the epitaxial layer 220 through the first oxide layer 230 to form a first electrode region 260 in a specific region inside the epitaxial layer 220 and near the surface of the epitaxial layer 220. At this time, the implanted ions may be P ions (phosphorus ions), the implantation voltage is 50keV to 100keV, and the implantation dose is 3E15cm -2 ～5E15cm -2 . After ion implantation, a rapid thermal annealing process may be performed, the process conditions may be a temperature of 950 ℃ and a time of 30s.
Next, please continue to refer to fig. 5, which shows that the first oxide layer 230 and the second oxide layer 240 are formed by extensionP-type ions are implanted into the layer 220 to form a second electrode region 270 and an isolation layer 280 at a specific region inside the epitaxial layer 220 and near the surface of the epitaxial layer 220, the second electrode region 270 being under the second oxide layer 240, the isolation layer 280 being under the first oxide layer 230, and the isolation layer 280 being between the first electrode region 260 and the field oxide 250. The isolation layer 280 and the first electrode region 260 are separated by field oxide 250. Referring to fig. 6, the cross section of the isolation layer 280 is a ring-shaped structure, which may be a square ring, the field oxide 250 is also ring-shaped, the field oxide 250 surrounds the second electrode region 270, and the isolation layer 280 surrounds the field oxide 250. The isolation layer 280 and the second electrode region 270 are formed simultaneously, so that the embodiment of the invention can not change the process flow and only need to change the layout structure compared with the formation of the silicon detector in the prior art. The implanted ions of the second conductivity type can be B ions with an implantation voltage of 10 keV-30 keV and an implantation dose of 2E14cm -2 ～5E14cm -2 . Then, the rapid thermal annealing treatment may be performed again, and the temperature may be 900 ℃. When P-type ions (B ions) are injected into the epitaxial layer 220 through the second oxide layer 240, the second oxide layer 240 captures the positive ions, resulting in formation of an induced electron layer on the surface of the second electrode region 270, and at this time, holes are generated to attract electrons on the surface of the second electrode region 270 because the isolation layer 280 is of the P-type conductivity. Electrons at the surface of the second electrode region 270 are blocked from moving toward the epitaxial layer 220, thereby reducing leakage current, i.e., dark current.
Next, referring to fig. 7, a plurality of through holes 291 are formed on the first oxide layer 230 and the second oxide layer 240, a metal line 292 is formed on the surface of each through hole 291, and an interlayer dielectric layer 293 is formed. An interlayer dielectric layer 293 is located on the surface of the epitaxial layer 220, the via 291 and the metal line 292 are both located within the interlayer dielectric layer 293, and adjacent vias 291 are separated by the interlayer dielectric layer 293.
Similarly, referring to fig. 7, the embodiment of the present invention further provides a silicon detector formed by using the method for forming a silicon detector, including: an epitaxial layer 220 of the first conductivity type; a first electrode region 260 of the first conductivity type located within the epitaxial layer 220 and proximate to a surface of the epitaxial layer 220; a second electrode region 270 of a second conductivity type located within the epitaxial layer 220 and adjacent to the surface of the epitaxial layer 220, the first electrode region 260 being separated from the second electrode region 270 by a field oxide 250, the second conductivity type and the first conductivity type being opposite conductivity types; an isolation layer 280 of a second conductivity type between the first electrode region 260 and the field oxide 250, the second electrode region 270 and the isolation layer 280 being formed simultaneously; a first oxide layer 230 on the surfaces of the first electrode region 260 and the isolation layer 280; a second oxide layer 240 located on a surface of the second electrode region 270; the first oxide layer 230 and the second oxide layer 240 are separated by a field oxide 250. The semiconductor device further comprises a substrate 210 of a first conductivity type, a plurality of through holes 291, a plurality of metal wires 292 and an interlayer dielectric layer 293, wherein the interlayer dielectric layer 293 is positioned on the surface of the epitaxial layer 220, the plurality of through holes 291 are respectively positioned on the surfaces of the first oxide layer 230 and the second oxide layer 240, the metal wires 292 are positioned on the surfaces of the through holes 291, the through holes 291 and the metal wires 292 are both positioned in the interlayer dielectric layer 293, adjacent through holes 291 are separated by the interlayer dielectric layer 293, and the substrate 210 is positioned at the bottom of the epitaxial layer 220. Wherein the first conductivity type is N type. The second conductivity type is P-type.
Subsequent processes also require bonding of the silicon probes to the PCB board. When it is desired to implement an X-ray silicon detector, a scintillator is also required. When the X-ray silicon detector is of FSI structure, the scintillator is disposed over the front side of the silicon detector, i.e. the front side of the substrate 210, wherein the epitaxial layer 220 is formed on the front side of the substrate 210. When the X-ray silicon detector is of BSI structure, the scintillator is disposed on the backside of the silicon detector, i.e., the backside of the substrate 210.
In summary, in the silicon detector and the forming method provided by the embodiments of the present invention, the conductivity type of the formed isolation layer is the same as the conductivity type of the second electrode region, so that induced electrons on the surface of the second electrode region move to the isolation layer, thereby reducing the leakage current from the second electrode region to the N-type epitaxial layer, and further reducing the dark current of the silicon detector. And the isolation layer and the second electrode area are formed at the same time, so that no extra process step is needed, and no extra process time is needed to be wasted.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.

Claims (10)

1. A silicon detector, comprising:
a substrate of a first conductivity type and an epitaxial layer, the epitaxial layer being located on a surface of the substrate;
a first electrode region of a first conductivity type within the epitaxial layer and proximate to a surface of the epitaxial layer;
a second electrode region of a second conductivity type within the epitaxial layer and adjacent to a surface of the epitaxial layer, the first electrode region being separated from the second electrode region by field oxide, the second conductivity type and the first conductivity type being opposite conductivity types;
an isolation layer of a second conductivity type located between the first electrode region and the field oxide, the second electrode region and isolation layer being formed simultaneously;
a first oxide layer located on the surfaces of the first electrode region and the isolation layer; and
and the second oxide layer is positioned on the surface of the second electrode region, and the first oxide layer and the second oxide layer are separated by the field oxygen.
2. The silicon detector of claim 1, wherein the first conductivity type is N-type.
3. The silicon detector of claim 1, wherein the second conductivity type is P-type.
4. The silicon detector of claim 1, further comprising a plurality of vias, a plurality of metal lines, and an interlayer dielectric layer, the interlayer dielectric layer being located on a surface of the epitaxial layer, the plurality of vias being located on surfaces of the first oxide layer and the second oxide layer, respectively, the metal lines being located on surfaces of the vias, the vias and the metal lines both being located within the interlayer dielectric layer, and adjacent ones of the vias being separated by the interlayer dielectric layer.
5. The silicon detector of claim 1, wherein the first oxide layer and the second oxide layer are each silicon dioxide.
6. A method of forming a silicon detector as claimed in any one of claims 1 to 5, comprising:
providing a substrate of a first conductivity type and an epitaxial layer, wherein the epitaxial layer is positioned on the surface of the substrate;
forming a first oxide layer and a second oxide layer on the surface of the epitaxial layer;
forming field oxide on the surface and inside of the epitaxial layer, wherein the field oxide separates the first oxide layer and the second oxide layer;
implanting ions into the epitaxial layer through the first oxide layer to form a first electrode region of a first conductivity type; and
and simultaneously implanting ions into the epitaxial layer through the first oxide layer and the second oxide layer to respectively form a second electrode region and an isolation layer of a second conductivity type, wherein the second electrode region and the isolation layer are respectively positioned at two sides of the field oxide, and the isolation layer is positioned between the first electrode region and the field oxide.
7. The method of forming a silicon detector according to claim 6, further comprising, after implanting ions into the epitaxial layer to form a second electrode region of a second conductivity type and an isolation layer: and forming a plurality of through holes, a plurality of metal wires and an interlayer dielectric layer, wherein the interlayer dielectric layer is positioned on the surface of the epitaxial layer, the through holes are respectively positioned on the surfaces of the first oxide layer and the second oxide layer, the metal wires are positioned on the surfaces of the through holes, the through holes and the metal wires are positioned in the interlayer dielectric layer, and the adjacent through holes are separated by the interlayer dielectric layer.
8. The method of claim 6, wherein implanting P ions into the epitaxial layer forms a first electrode region.
9. The method of forming a silicon detector according to claim 6, wherein implanting B ions into the epitaxial layer forms a second electrode region and an isolation layer.
10. The method of forming a silicon detector according to claim 6, wherein the first oxide layer and the second oxide layer are formed on the surface of the epitaxial layer by depositing silicon dioxide.
CN202310634417.2A 2023-05-31 2023-05-31 Silicon detector and forming method Pending CN116525695A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310634417.2A CN116525695A (en) 2023-05-31 2023-05-31 Silicon detector and forming method

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Application Number Priority Date Filing Date Title
CN202310634417.2A CN116525695A (en) 2023-05-31 2023-05-31 Silicon detector and forming method

Publications (1)

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CN116525695A true CN116525695A (en) 2023-08-01

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