CN116520113A - Light source device in test system - Google Patents
Light source device in test system Download PDFInfo
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- CN116520113A CN116520113A CN202210077701.XA CN202210077701A CN116520113A CN 116520113 A CN116520113 A CN 116520113A CN 202210077701 A CN202210077701 A CN 202210077701A CN 116520113 A CN116520113 A CN 116520113A
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- 238000012423 maintenance Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 9
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- 239000013256 coordination polymer Substances 0.000 description 5
- 238000013100 final test Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
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- DCPDZFRGNJDWPP-UHFFFAOYSA-N 1,2,3,4,5-pentachloro-6-(2,4,5-trichlorophenyl)benzene Chemical compound C1=C(Cl)C(Cl)=CC(Cl)=C1C1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl DCPDZFRGNJDWPP-UHFFFAOYSA-N 0.000 description 3
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- 230000009286 beneficial effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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Abstract
The application provides a light source device in a test system, which is characterized by comprising: an optical mirror for reflecting light; a light source for providing light required for testing, the light source having a light emitting face; the probe card is arranged below the light source and is provided with a through hole; and the wafer is arranged below the probe card and is provided with a chip light sensitive surface. By adopting a reflection mode, the optical path of light emitted by the light source reaching the wafer surface is enlarged in a smaller space; and by selecting light sources with different divergence angles, different wafer ranges can be covered; the chips with different sizes of chip light sensitive surfaces can be completely covered only by the hole opening rule and the light source space position placement rule, and further, the light source is arranged on the independent PCB, so that later maintenance and replacement are facilitated.
Description
Technical Field
The application relates to the field of chip testing, in particular to the field of light source devices of chip testing systems.
Background
The IC chip needs to go through two most critical test points: wafer probe testing (CP) and Final Test (FT). The CP test is a wafer-level chip test before packaging. While the FT test is the final test performed after the chip has completed packaging. The CP test is to directly load an excitation signal to each chip on a wafer through a special probe, and test the function of each chip. Failure of different items will be indicated in different colors, respectively. After CP testing, the wafer is diced, and the diced chips are sorted according to the previous results, and only good chips are sent to a packaging factory for packaging. The CP test can screen out bad chips, save packaging cost, bear a plurality of test items of the chips, reduce test items of the FT test and improve overall test efficiency.
The wafer level chip is tested, complete light coverage (covering the light sensing area of the chip) is provided for the chip through shielding of the through holes of the probe card, and when the chip is detected, the light sensing area of the chip needs to be covered through the through holes of the probe card. However, the conventional wafer testing light source is combined with the tester, so that the wafer testing light source has the problems of complex structure, large volume, complex operation and high cost.
Disclosure of Invention
The present application aims to provide a light source device in a test system, which expands the optical path of light emitted by a light source to a wafer surface in a small space by adopting a reflection mode, aiming at the defects in the prior art; and by selecting light sources with different divergence angles, different wafer ranges can be covered; the chips with different sizes of chip light sensitive surfaces can be completely covered only by the hole opening rule and the light source space position placement rule, and further, the light source is arranged on the independent PCB, so that later maintenance and replacement are facilitated.
In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
the application provides a light source device in a test system, which is characterized by comprising:
an optical mirror for reflecting light;
a light source for providing light required for testing, the light source having a light emitting face;
the probe card is arranged below the light source and is provided with a through hole;
and the wafer is arranged below the probe card and is provided with a chip light sensitive surface.
Optionally, an included angle between the optical reflector and the wafer in a horizontal direction is zero.
Optionally, the maximum distance between the center of the light source and the center of the through hole in the horizontal direction is determined by the dimension of the through hole in the horizontal direction, the dimension of the light sensing surface of the chip in the horizontal direction, the distance between the lower surface of the optical reflector and the light sensing surface of the chip in the vertical axis direction, the distance between the upper surface of the probe card and the light emitting surface of the light source in the vertical direction, and the thickness of the probe card and the distance between the lower surface of the probe card and the light sensing surface of the chip in the vertical direction.
Optionally, the minimum distance between the center of the light source and the center of the through hole in the horizontal direction is determined by the dimension of the through hole in the horizontal direction, the dimension of the light sensitive surface of the chip in the horizontal direction, the dimension of the light source in the horizontal direction, the distance between the lower surface of the optical reflector and the light sensitive surface of the chip in the vertical axis direction, the distance between the upper surface of the probe board card and the light emitting surface of the light source in the vertical direction, and the thickness of the probe board card and the distance between the lower surface of the probe board card and the light sensitive surface of the chip in the vertical direction.
Optionally, the distance from the center of the light source to the edge of the through hole has no direct relation with the dimension of the light sensitive surface of the chip in the horizontal direction.
Optionally, the light source is disposed on an independent PCB board.
Optionally, the optical reflector has a certain included angle with the wafer in the horizontal direction.
Optionally, the vertical distance between the optical reflector and the wafer is obtained according to the difference between the horizontal dimensions of the chip light emitting surface and the through hole, the vertical distance between the upper surface of the probe card and the chip light emitting surface, and the dimension of the light source.
Optionally, the horizontal position of the center of the light source relative to the center of the through hole is obtained according to the difference between the dimensions of the light emitting surface of the chip and the horizontal direction of the through hole, the vertical distance between the upper surface of the probe card and the light emitting surface of the chip, the dimension of the light source and the vertical distance between the optical reflector and the wafer.
The beneficial effects of this application are:
the application provides a light source device in a test system, which is characterized by comprising:
an optical mirror for reflecting light;
a light source for providing light required for testing, the light source having a light emitting face;
the probe card is arranged below the light source and is provided with a through hole;
and the wafer is arranged below the probe card and is provided with a chip light sensitive surface.
By adopting a reflection mode, the optical path of light emitted by the light source reaching the wafer surface is enlarged in a smaller space; and by selecting light sources with different divergence angles, different wafer ranges can be covered; the chips with different sizes of chip light sensitive surfaces can be completely covered only by the hole opening rule and the light source space position placement rule, and further, the light source is arranged on the independent PCB, so that later maintenance and replacement are facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a probe card of the prior art;
FIG. 2 is a schematic diagram of a reflective optical system in a chip test system according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a light source position of a reflective optical module in a chip test system according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of a reflective optical system in another chip testing system according to an embodiment of the present application.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
FIG. 1 is a schematic diagram of a probe card of the prior art; the schematic diagram shown in fig. 1 includes, a wafer 101 to be tested; a probe head 102; pad 103; and a PCB board 104 in the probe card that assumes the primary architecture functions. In order to transfer a test signal outputted from a test apparatus to a semiconductor wafer, a probe card having a plurality of conductive probes is used in performing a wafer level test. Typically in wafer level testing, the dice on a semiconductor wafer are inspected using a probe card 102 such that the probes individually contact the pads 103 of each die. After the conductive probe is contacted, a test signal is input to facilitate the inspection and detect bad products.
Fig. 2 is a schematic diagram of a reflective optical system in a chip test system according to an embodiment of the present application, where, as shown in fig. 2, the reflective optical system includes an optical reflector 201, a light source 202, a pcb 203, a chip photosurface 205 of a probe card 204, and a wafer 206. In the embodiment shown in fig. 2, the optical mirror 201 is disposed above the probe card 204, and the light source 202 may be mounted on the probe card 204 or on a separate PCB 203 for easy replacement. When the light source 202 is placed on a separate PCB 203, the separate PCB 203 is placed between the optical mirror 201 and the probe 204. Wherein the probe card is provided with a through hole. A wafer 206 is placed under the probe card and has a photosensitive area 205. In the embodiment shown in fig. 2, the optical mirror 201 remains parallel to the wafer 206. In fig. 2, Z1 is a distance in the Z-axis direction from the lower surface of the optical mirror 201 to the chip photosurface 205; z2 is the distance between the upper surface of the probe card 204 and the light source light emitting surface 202 in the Z-axis direction; z3 is the thickness of the probe card 204; z4 is the distance between the lower surface of the probe card 204 and the chip photosurface 205 in the Z-axis direction; z5 is a distance from the upper surface of the probe card 204 to the chip light sensing surface 205 in the Z axis direction, wherein z5=z3+z4; x1 is the dimension of the through hole of the probe card 204 in the X-axis direction; x2 is the dimension of the chip photosurface 205 in the X-axis direction; x3 is the distance between the center of the light emitting surface of the light source 202 and the center of the through hole of the probe card 204 in the X-axis direction; x4 is the dimension of the light source 202 in the X-axis direction; x5 is the distance between the edge of the through hole on the probe card and the edge of the chip photosensitive region 205 on the X axis, x5= (X1-X2)/2. In the embodiment shown in fig. 2, the light source 202 and the optical mirror 201 are disposed above the probe card 204, wherein the light source is disposed horizontally and the light exit surface faces away from the surface of the probe card 204, and the light source may be mounted on the upper surface of the probe card 204 or on a separate PCB board 203, and the mirror surface of the optical mirror 201 faces the probe card 204. The divergent light emitted from the light source 202 passes through the through hole of the probe card 204 after being reflected, and reaches the chip photosensitive region 205. By designing the spatial locations of the light source 202, the optical mirror 201, and the aperture size of the probe card 204, full optical coverage of chips of different light sensing area sizes can be achieved.
Fig. 3 is a schematic diagram of a light source position of a reflective optical module in a chip test system according to an embodiment of the present application. As shown in fig. 3, the optical reflection mirror comprises an optical reflection mirror 301, a light source 302, a pcb 303, a chip photosurface 305 of a probe card 304 and a wafer 306. In the embodiment shown in fig. 3, the optical mirror 301 is disposed above the probe card 304, and the light source 302 may be mounted on the probe card 304 or on a separate PCB 303 for easy replacement. When the light source 302 is placed on a separate PCB 303, the separate PCB 303 is placed between the optical mirror 301 and the probe 304. Wherein the probe card is provided with a through hole. A wafer 306 is placed under the probe card and the photosensitive area on the wafer is 305. The actual view shown in FIG. 3Shi Lie similarly to the embodiment shown in fig. 2, the optical mirror 301 remains parallel to the wafer 306. In order to ensure that the light emitted by the center of the light source can completely cover the photosensitive area of the chip, a virtual light can be made from the edge of the photosensitive surface of the chip to the upper edge of the through hole, and the virtual light is reversely transmitted to the center of the light source through the reflecting mirror. The light source is located at the position of the longest distance X3 from the center of the light source to the center of the through hole max The calculation shows that:
X3 max ≤X5Z5*(2*Z1-Z2-Z5)+X2/2 (1)
as can be seen from FIG. 3, in order to avoid the influence of the light source on the light shielding of the light source on the light sensing surface of the chip, the upper edge of the light source, the edge of the light sensing surface of the chip and the upper edge of the through hole are aligned, thereby obtaining the minimum distance X3 from the center of the light source to the center of the through hole min The calculation shows that:
X3 min ≥X5Z5*(Z2+Z5)+X22+X4/2 (2)
as can be seen from the formulas (1) and (2), the distance (X3-X1/2) from the center of the light source to the edge of the through hole is not affected by the size X2 of the photosurface of the chip. Therefore, the light coverage of chips with any photosensitive area size can be satisfied only by satisfying two rules of corresponding hole opening rules and the distance range from the center of the light source to the edge of the through hole.
Fig. 4 is a schematic diagram of a reflective optical system in another chip testing system according to an embodiment of the present application, where, as shown in fig. 4, the reflective optical system includes an optical reflector 401, a light source 402, a pcb 4303, a chip photosurface 405 of a probe card 404, and a wafer 306. In the embodiment shown in fig. 4, the optical mirror 401 is disposed above the probe card 404, and the light source 402 may be mounted on the probe card 404 or on a separate PCB 403 for easy replacement. When the light source 402 is placed on a separate PCB 403, the separate PCB 403 is placed between the optical mirror 401 and the probe 404. Wherein the probe card is provided with a through hole. A wafer 406 is placed under the probe card and the photosensitive area on the wafer is 405. In the embodiment shown in fig. 3, the optical mirror 401 is held at an angle to the wafer 406 that is non-parallel.
The actual form shown in FIG. 4Shi Lie the mirror 401 has its center as the origin, the horizontal direction as the X axis, and the vertical direction as the Z axis. 5 key nodes are selected, which are the origin (x 0 ，z 0 ) The center of the emission surface of the light source (x 1 ，z 1 ) Two side edges (x) of the chip photosensitive area 2 ，z 2 ) And (x) 3 ，z 3 ) Edge points (x) on both sides of the through hole 4 ，z 4 ) And (x) 5 ，z 5 ). The rotation angle α of the mirror about the origin. In the embodiment shown in fig. 4, the meanings represented by Z1 to Z5 and x1 to x5 are the same as those of the embodiment shown in fig. 3, and will not be described again here.
As shown in fig. 4, a beam of light passes through the edge of the through hole and reaches the edge of the chip, the light is called a critical light, the photosurface of the chip is shaded when the incident angle is larger than the incident angle of the critical light, and the photosurface of the chip is fully covered when the incident angle is smaller than the incident angle of the critical light. The apparent critical ray is a straight line, as shown in formula (3):
the projection of the plane of the reflector on the ZX plane is regarded as a straight line, and the formula is as follows:
z＝x·tan(α) (4)
the point of coincidence of the two straight lines, i.e. the coordinate of the critical ray at specular reflection, is (x s ，z s ),
z s ＝x s ·tanα (6)
The included angle between the critical light and the reflecting surface is theta, and the size of the included angle is
The reflection angle of the critical light is gamma, the size is,
γ＝90°+θ (8)
the included angle between the incident light corresponding to the critical light and the horizontal plane is epsilon, the size is,
∈＝180°-(θ+2γ-α)(10)
the formula of the incident ray corresponding to the critical ray is,
z＝tan(ε)·x-(x s ·tan(ε)-z s ) (11)
as can be seen from the formula (11), the maximum distance x of the light source center relative to the through hole center can be obtained by taking the vertical position z of the light source light-emitting surface into the formula,
in the embodiment shown in fig. 4, the distance between the reflecting surface and the wafer is obtained according to the difference between the sizes of the chip and the through hole, the distance between the upper surface of the probe card and the chip, and the size of the light source, and then the position of the center of the light source relative to the center of the through hole is obtained, so as to ensure the full coverage of the light source to the light sensing surface of the chip.
In the embodiment shown in fig. 4, the distance from the upper surface of the probe card to the photosensitive surface of the wafer is set as follows: z5 min ～Z5 max The method comprises the steps of carrying out a first treatment on the surface of the The maximum size of the photosensitive area of the chip is as follows: x2 max *X2 max ；
The maximum size of the light source is: x4 max *X4 max The method comprises the steps of carrying out a first treatment on the surface of the The vertical distance between the light source light-emitting surface and the probe card is as follows: z2 min ～Z2 max The method comprises the steps of carrying out a first treatment on the surface of the The inclination angle range of the reflecting surface is as follows: + -alpha;
the distance from the chip edge to the through hole edge is: x5 min ～X5 max ；
The shortest vertical distance of the reflecting surface relative to the wafer is Z1 by the formula min Is that
In order to ensure the space position allowance of the light source in the horizontal direction, the vertical distance between the reflecting surface and the wafer surface is added with 5mm and 15mm on the basis of the minimum distance, so that the following steps are obtained:
Z1＝Z1 min +5mm～Z1 min +15mm (14)
if α=0, substituting formula (14) into formula (1) and formula (2) results in a horizontal distance of the light source center with respect to the through hole center of: x3 min ～X3 max And distance of the light source center from the edge of the through hole: x3 min -X1/2～X3 max -X1/2
If α is not equal to 0, substituting the formula (14) and the angle α into the formula (12) and the formula (2) for calculation, and obtaining a horizontal distance between the center of the light source and the center of the through hole as follows:
X3 min ～X3 max 。
according to the embodiment shown in fig. 4, the distance from the upper surface of the probe card to the photosensitive surface of the wafer is set to be 5 mm-8 mm; the maximum size of the photosensitive area of the chip is 4mm x 4mm; the maximum size of the light source is 5mm x 5mm; the vertical distance between the light source light-emitting surface and the probe card is 3 mm-5 mm;
the inclination angle alpha=0 of the emission surface; the distance from the edge of the chip to the edge of the through hole is 0.5 mm-1 mm; the following can be obtained according to the embodiment shown in fig. 4: the shortest vertical distance of the reflecting surface relative to the wafer is 30.5mm; the distance between the reflecting surface and the wafer is 35.5 mm-45.5 mm; the distance from the center of the light source to the center of the through hole is 5.3125 mm-5.75 mm; the distance from the center of the light source to the edge of the through hole is 2.8125 mm-3.25 mm.
Setting the distance from the upper surface of the probe card to the photosensitive surface of the wafer to be 5 mm-8 mm; the maximum size of the photosensitive area of the chip is 4mm x 4mm; the maximum size of the light source is 5mm x 5mm; the vertical distance between the light source light-emitting surface and the probe card is 3 mm-5 mm; the inclination angle alpha=0 of the emission surface;
the distance from the edge of the chip to the edge of the through hole is 1 mm-1.5 mm; the embodiment shown in fig. 4 can be obtained: the shortest vertical distance of the reflecting surface relative to the wafer is 20.5mm; the distance between the reflecting surface and the wafer is 25.5 mm-35.5 mm; the distance from the center of the light source to the center of the through hole is as follows: x3=6.125 mm to 7mm; the distance from the center of the light source to the edge of the through hole is 3.12 mm-4 mm.
If the distance from the upper surface of the probe card to the photosensitive surface of the wafer is 5 mm-8 mm; the maximum size of the photosensitive area of the chip is 4mm x 4mm; the maximum size of the light source is 5mm x 5mm; the vertical distance between the light source light-emitting surface and the probe card is 3 mm-5 mm; the inclination angle alpha=0 of the emission surface; the distance from the edge of the chip to the edge of the through hole is 1.5 mm-2 mm; the embodiment shown in fig. 4 can be used to obtain: the shortest vertical distance of the reflecting surface relative to the wafer is 17.1667mm; the distance between the reflecting surface and the wafer is 22.1667 mm-32.1667 mm; the distance from the center of the light source to the center of the through hole is as follows: the distance from the center of the light source to the edge of the through hole is 3.437 mm-4.75 mm, which is 6.9375 mm-8.25 mm.
Setting the distance from the upper surface of the probe card to the photosensitive surface of the wafer to be 5 mm-8 mm; the maximum size of the photosensitive area of the chip is 4mm x 4mm; the maximum size of the light source is 5mm x 5mm; the vertical distance between the light source light-emitting surface and the probe card is 3 mm-5 mm; inclination angle α= ±1° of the emission surface; the distance from the edge of the chip to the edge of the through hole is 0.75 mm-1 mm.
This is achieved by the embodiment shown in fig. 4: the shortest vertical distance between the reflecting surface and the wafer is 23.8mm, and the distance between the reflecting surface and the wafer is 28.8 mm-38.8 mm; the distance from the center of the light source to the center of the through hole is 5.72 mm-6.06 mm; the distance from the center of the light source to the edge of the through hole is 97 mm-3.31 mm.
Setting the distance from the upper surface of the probe card to the photosensitive surface of the wafer to be 5 mm-8 mm; the maximum size of the photosensitive area of the chip is 4mm x 4mm; the maximum size of the light source is 5mm x 5mm; the vertical distance between the light source light-emitting surface and the probe card is 3 mm-5 mm; inclination angle α= ±1° of the emission surface; the distance from the edge of the chip to the edge of the through hole is 1 mm-1.5 mm; the embodiment shown in fig. 4 can be used to obtain: the shortest vertical distance of the reflecting surface relative to the wafer is 20.5mm; the distance between the reflecting surface and the wafer is 25.5 mm-35.5 mm; the distance from the center of the light source to the center of the through hole is 6.125 mm-6.72 mm; the distance from the center of the light source to the edge of the through hole is 3.125 mm-3.74 mm.
Setting the distance from the upper surface of the probe card to the photosensitive surface of the wafer to be 5 mm-8 mm; the maximum size of the photosensitive area of the chip is 4mm x 4mm; the maximum size of the light source is 5mm x 5mm; the vertical distance between the light source light-emitting surface and the probe card is 3 mm-5 mm; inclination angle α= ±1° of the emission surface; the distance from the edge of the chip to the edge of the through hole is 1.5 mm-2 mm; the embodiment shown in fig. 4 can be obtained: the shortest vertical distance of the reflecting surface relative to the wafer is 17.17mm; the distance between the reflecting surface and the wafer is 22.17 mm-32.17 mm; the distance from the center of the light source to the center of the through hole is as follows: 6.94 mm-8.05 mm; the distance from the center of the light source to the edge of the through hole is 3.44 mm-4.55 mm.
It should be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (9)
1. A light source device in a test system, comprising:
an optical mirror for reflecting light;
a light source for providing light required for testing, the light source having a light emitting face;
the probe card is arranged below the light source and is provided with a through hole;
and the wafer is arranged below the probe card and is provided with a chip light sensitive surface.
2. The light source device in the test system of claim 1, wherein the optical mirror forms an angle with the wafer in the horizontal direction of zero.
3. The light source device in the test system according to claim 2, wherein a maximum distance between the light source center and the center of the through hole in the horizontal direction is determined by a dimension of the through hole in the horizontal direction, a dimension of the chip photosurface in the horizontal direction, a distance between the lower surface of the optical mirror and the chip photosurface in the vertical direction, a distance between the upper surface of the probe card and the light source light emitting surface in the vertical direction, a thickness of the probe card, and a distance between the lower surface of the probe card and the chip photosurface in the vertical direction.
4. The light source device in the test system according to claim 2, wherein a minimum distance between the light source center and the center of the through hole in the horizontal direction is determined by a dimension of the through hole in the horizontal direction, a dimension of the chip light sensing surface in the horizontal direction, a distance between the light source in the horizontal direction and the light sensing surface of the chip, a distance between the upper surface of the probe card and the light source emitting surface in the vertical direction, a thickness of the probe card, and a distance between the lower surface of the probe card and the light sensing surface of the chip in the vertical direction.
5. The light source device in the test system according to claim 2, wherein a distance from the center of the light source to the edge of the through hole has no direct relation with a dimension of the light-sensitive surface of the chip in a horizontal direction.
6. The light source device in the test system of claim 1, wherein the light source is disposed on a separate PCB board.
7. The light source device in the test system of claim 1, wherein the optical reflector is at an angle to the wafer in a horizontal direction.
8. The light source device in the test system of claim 7, wherein the vertical distance of the optical mirror with respect to the wafer is obtained based on a difference between the dimensions of the light emitting surface of the chip and the horizontal direction of the through hole, a vertical distance of the upper surface of the probe card with respect to the light emitting surface of the chip, and the dimensions of the light source.
9. The light source device in the test system according to claim 8, wherein the horizontal position of the light source center with respect to the center of the through hole is obtained from a difference between the dimensions of the light emitting surface of the chip and the horizontal direction of the through hole, a vertical distance of the upper surface of the probe card with respect to the light emitting surface of the chip, a size of the light source, and a vertical distance of the optical mirror with respect to the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210077701.XA CN116520113A (en) | 2022-01-24 | 2022-01-24 | Light source device in test system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210077701.XA CN116520113A (en) | 2022-01-24 | 2022-01-24 | Light source device in test system |
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| CN116520113A true CN116520113A (en) | 2023-08-01 |
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| CN202210077701.XA Pending CN116520113A (en) | 2022-01-24 | 2022-01-24 | Light source device in test system |
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2022
- 2022-01-24 CN CN202210077701.XA patent/CN116520113A/en active Pending
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