CN116516471A - Epitaxial reactor - Google Patents
Epitaxial reactor Download PDFInfo
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- CN116516471A CN116516471A CN202310554381.7A CN202310554381A CN116516471A CN 116516471 A CN116516471 A CN 116516471A CN 202310554381 A CN202310554381 A CN 202310554381A CN 116516471 A CN116516471 A CN 116516471A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 118
- 239000010439 graphite Substances 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000011144 upstream manufacturing Methods 0.000 claims description 68
- 238000009413 insulation Methods 0.000 claims description 31
- 239000010453 quartz Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004321 preservation Methods 0.000 claims description 11
- 241001272720 Medialuna californiensis Species 0.000 claims description 5
- 230000008859 change Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 21
- 238000009434 installation Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The epitaxial reactor disclosed by the invention comprises a graphite chamber and a reaction chamber, wherein the graphite chamber comprises an upper half month and a lower half month, the upper half month and the lower half month are both arranged in the reaction chamber, an air flow channel for a process air to pass through is formed between the upper half month and the lower half month, and the epitaxial reactor also comprises a distance measuring device which can measure the positions of the upper half month and the lower half month in the reaction chamber so as to realize accurate positioning of the graphite chamber relative to the position of the reaction chamber. Before dismantling the graphite cavity at every turn, can accurately obtain the mounted position of graphite cavity in the reaction chamber through range unit to this is the position benchmark, when reinstalling the graphite cavity, carries out the range finding through range unit again, can clear judgement graphite cavity in the reaction chamber according to the contrast of data from front to back has the skew, in order to realize the accurate location of graphite cavity for the reaction chamber, thereby guaranteed that the graphite cavity can not change at the back of reinstalling, the temperature field of reaction chamber.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to an epitaxial reactor.
Background
With the continuous development of the age, the proportion of semiconductor devices in the microelectronic field is also increasing, wherein epitaxial growth is a particularly important step in the manufacture of semiconductor devices. The most main method of epitaxial growth at present is a vapor phase epitaxy method adopting Chemical Vapor Deposition (CVD), which uses dichlorosilane, trichlorosilane, silicon tetrachloride or silane as reaction gas, and reacts under a certain protective atmosphere to generate silicon atoms and deposits the silicon atoms on a heated substrate, wherein the substrate material is generally selected from Si, siO2, si3N4 and the like.
In the microelectronics field, a CVD reactor is used to deposit thin and uniform layers of semiconductor material onto a substrate, which is then subjected to a series of cleaning, dicing, processing, etc., to obtain electronic devices, in particular wafers for integrated circuits. In the growth process, semiconductor materials are deposited on the substrate and the inner wall of the reaction chamber at the same time, and a thermal wall effect of the CVD reactor is generated, so that a new semiconductor material thin layer can be formed in the inner wall of the graphite chamber in each epitaxial growth process, and after a plurality of different processes, a layer of thick material grows in the graphite chamber, the structure of the chamber is changed by the layer of the material, the trend of reaction gas is changed, and the epitaxial growth process is influenced.
To solve this problem, a solution is generally adopted in which the graphite chamber is periodically removed from the reaction chamber, and the material grown on the inner wall of the graphite chamber is removed by a physical or chemical method, and then the cleaned graphite chamber is reinstalled in the reaction chamber. In the installation process, whether the graphite chamber is installed in place is often judged by a tape measure, a depth gauge, a vernier caliper and even naked eyes, and the positioning mode usually has a large error, and the deviation of the position of the graphite chamber easily causes the change of a temperature field in the reaction chamber, so that the epitaxial growth process is influenced. When the situation happens, the graphite chamber needs to be removed again to adjust the position again for installation of the graphite chamber, so that repeated debugging consumes a great deal of time, and production efficiency is reduced.
Therefore, how to realize the installation and positioning of the graphite chamber is a technical problem to be solved by the person skilled in the art.
Disclosure of Invention
In view of the above, an object of the present invention is to provide an epitaxial reactor for realizing the installation and positioning of a graphite chamber.
In order to achieve the above purpose, the present invention provides the following technical solutions:
an epitaxial reactor, includes graphite cavity and reaction chamber, graphite cavity includes first half month and lower half month, first half month with lower half month all set up in the reaction chamber, just last half month with form the air current passageway that supplies the process air current to pass through between the lower half month, still include:
and the distance measuring device is used for measuring the positions of the upper half month and the lower half month in the reaction chamber so as to realize the positioning of the graphite chamber.
Optionally, in the epitaxial reactor, the reaction chamber includes:
the graphite chamber is arranged in the quartz bell jar;
the air inlet flange is arranged at the first end of the quartz bell jar;
and the tail gas flange is arranged at the second end of the quartz bell jar, and is positioned at the upstream of the tail gas flange along the flow direction of the process gas flow.
Optionally, in the epitaxial reactor, the distance measuring device includes:
the first distance measuring piece is arranged on a first flange and used for measuring the distance between the upper half month and the first flange, and the first flange is the air inlet flange or the tail gas flange;
the second distance measuring piece is arranged on a second flange and is used for measuring the distance between the lower half moon and the second flange, and the second flange is the air inlet flange or the tail gas flange.
Optionally, in the epitaxial reactor, the graphite chamber further includes:
an upstream heat shield disposed at an end of the upper and lower half-months upstream in a flow direction of the process gas stream;
a downstream heat shield disposed at an end of the upper and lower half-months downstream in a flow direction of the process gas stream.
Optionally, in the epitaxial reactor, the distance measuring device includes an upstream distance measuring device, and the upstream distance measuring device is disposed on the air inlet flange and is used for detecting positions of at least two positioning points located at different heights of the upstream heat shield along the vertical direction so as to determine an included angle between the upstream heat shield and the vertical direction;
and if the included angle between the upstream heat shield and the vertical direction is within a preset angle range, positioning the graphite chamber through the distance between the air inlet flange and the upstream heat shield.
Optionally, in the epitaxial reactor, the ranging device includes a downstream ranging device, where the downstream ranging device is disposed on the tail gas flange, and is configured to detect positions of at least two positioning points located at different heights of the downstream heat shield along a vertical direction through a change of a ranging angle, so as to determine an included angle between the downstream heat shield and the vertical direction;
and if the included angle between the downstream heat shield and the vertical direction is within a preset angle range, positioning the graphite chamber through the distance between the tail gas flange and the downstream distance measuring device.
Optionally, in the epitaxial reactor, the graphite chamber further includes:
the graphite upper heat-insulating layer is arranged between the upper half month and the graphite chamber;
the graphite lower heat preservation layer is arranged between the lower half month and the graphite chamber and buckled with the graphite upper heat preservation layer, and the graphite upper heat preservation layer, the graphite lower heat preservation layer, the upstream heat shield and the downstream heat shield form a heat preservation layer.
Optionally, in the above epitaxial reactor, an upper positioning portion is provided on the upper graphite thermal insulation layer, and a lower positioning portion for fastening with the upper positioning portion is provided on the lower graphite thermal insulation layer.
Optionally, in the epitaxial reactor, the graphite upper insulation layer is provided with a limiting step for embedding the upstream heat shield and the downstream heat shield;
the graphite lower heat preservation layer is provided with a limiting step for embedding the upstream heat shield and the downstream heat shield.
Optionally, in the epitaxial reactor, the distance measuring device is a laser distance measuring device.
The epitaxial reactor provided by the invention comprises a graphite chamber and a reaction chamber, wherein the graphite chamber comprises an upper half month and a lower half month, the upper half month and the lower half month are both arranged in the reaction chamber, an air flow channel for the process air to pass through is formed between the upper half month and the lower half month, and the epitaxial reactor also comprises a distance measuring device which can measure the positions of the upper half month and the lower half month in the reaction chamber so as to realize accurate positioning of the graphite chamber relative to the position of the reaction chamber.
Since the upper and lower half-months are in direct contact with the process gas stream, deposits can form, and therefore the graphite chamber needs to be periodically dismantled for deposit treatment. Before dismantling the graphite cavity at every turn, can accurately obtain the mounted position of graphite cavity in the reaction chamber through range unit to this is the position benchmark, when reinstalling the graphite cavity, ranges by range unit again, can clear judgement graphite cavity in the reaction chamber the position whether skew has according to the contrast of data from front to back, if there is the skew, then according to the deviation size readjust graphite cavity in position can, avoid the dismouting again that leads to because the location of graphite cavity is inaccurate. The position reference can be designed according to the actual situation when the graphite chamber is first installed.
Compared with the prior art, the epitaxial reactor provided by the invention has the advantages that the structure is simple, the operation is convenient, the accuracy is high, and the accurate positioning of the graphite chamber relative to the reaction chamber can be realized, so that the temperature field of the reaction chamber is not changed after the graphite chamber is reinstalled, the epitaxial process is more stable, and the epitaxial reactor is suitable for popularization and use.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an epitaxial growth apparatus according to an embodiment of the present invention;
FIG. 2 shows a distance measuring device and a graphite chamber insulation layer according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a connection structure of a graphite insulation layer according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a split structure of a graphite insulation layer according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a graphite insulation layer according to an embodiment of the present invention;
FIG. 6 is a front view of an upstream heat shield according to an embodiment of the present disclosure;
FIG. 7 is a side view of an upstream heat shield according to an embodiment of the present disclosure;
FIG. 8 is a front view of a downstream heat shield according to an embodiment of the present disclosure;
fig. 9 is a side view of a downstream heat shield in accordance with an embodiment of the present disclosure.
Wherein 100 is a reaction chamber, 110 is a quartz bell jar, 120 is an air inlet flange, and 130 is an exhaust flange;
200 is a graphite chamber, 201 is an air flow channel, 210 is a graphite upper heat insulation layer, 211 is an upper half month, 220 is a graphite lower heat insulation layer, 221 is a lower half month, 230 is an upstream heat shield, 240 is a downstream heat shield, and 250 is a power tray;
300 is an induction coil;
400 is an upstream ranging device and 410 is a downstream ranging device.
Detailed Description
The invention discloses an epitaxial reactor for realizing the installation and positioning of a graphite chamber.
Hereinafter, embodiments will be described with reference to the drawings. Furthermore, the embodiments shown below do not limit the summary of the invention described in the claims. The whole contents of the constitution shown in the following examples are not limited to the solution of the invention described in the claims.
Referring to fig. 1, the epitaxial reactor disclosed in the embodiment of the invention comprises a graphite chamber 200 and a reaction chamber 100, wherein the graphite chamber 200 comprises an upper half month 211 and a lower half month 221, the upper half month 211 and the lower half month 221 are both arranged in the reaction chamber 100, and an air flow channel 201 for the process air to pass through is formed between the upper half month 211 and the lower half month 221.
Since the upper and lower half months 211, 221 are in direct contact with the process gas stream, deposits may form, and thus the graphite chamber 200 may need to be periodically removed for deposit treatment. Before the graphite chamber 200 is dismantled every time, the installation position of the graphite chamber 200 in the reaction chamber 100 can be accurately obtained through the distance measuring device, the distance measuring device is used for measuring the distance again when the graphite chamber 200 is reinstalled, whether the position of the graphite chamber 200 in the reaction chamber 100 is offset or not can be clearly judged according to the comparison of front and rear data, if offset exists, the graphite chamber 200 can be readjusted according to the deviation of the position, and the reinstallation and the disassembly caused by inaccurate positioning of the graphite chamber 100 are avoided. The positional reference may be designed according to the actual situation when the graphite chamber 200 is first installed.
Compared with the prior art, the epitaxial reactor disclosed by the embodiment of the invention has the advantages of simple structure, convenience in operation and high accuracy, and can realize the accurate positioning of the graphite chamber 200 relative to the reaction chamber 100, so that the temperature field of the reaction chamber is not changed after the graphite chamber 200 is reinstalled, the epitaxial process is more stable, and the epitaxial reactor is suitable for popularization and use.
Referring to fig. 1, the reaction chamber 100 includes a quartz bell jar 110, an inlet flange 120, and an exhaust flange 130. The graphite chamber 200 is arranged in the quartz bell jar 110, and the air inlet flange 120 is arranged at the first end of the quartz bell jar 110; an exhaust flange 130 is disposed at a second end of the quartz bell jar 110 and an inlet flange 120 is positioned upstream of the exhaust flange 130 in the flow direction of the process gas flow. The process gas stream enters the graphite chamber 200 from the inlet flange 120 and flows through the power tray 250 and growth wafer located on the lower half month 221 and finally out the exhaust flange 130.
In the case of mounting the graphite chamber 200, the upper half month 211 and the lower half month 221 may be sequentially installed in the quartz bell jar 110. In a specific embodiment, to ensure that both the upper half month 211 and the lower half month 221 are in the designated positions after the reloading, the ranging device includes a first ranging member and a second ranging member. The first distance measuring piece can be fixedly arranged on the first flange to measure the distance between the upper half month 211 and the first flange, the first flange can be the air inlet flange 120 or the tail gas flange 130, and whether the installation position of the upper half month 211 is accurate can be judged by comparing the distance with the preset distance. The second distance measuring member may be fixedly disposed on the second flange to measure the distance between the lower half month 221 and the reaction chamber 100, and the second flange may be the air inlet flange 120 or the tail gas flange 130, and by comparing with the preset distance, it may be determined whether the installation position of the lower half month 221 is accurate.
The preset distance is the distance between the upper half month 211 and the lower half month 221 and the intake flange 120 or the exhaust flange 130 before the graphite chamber 200 is reassembled, or the distance designed by the operator.
In order to simplify the installation structure, the first ranging member and the second ranging member may be the same ranging member, the installation positions of which are fixed, and determination of the installation positions of the upper half month 211 and the lower half month 221 may be achieved by detecting the change in the angle.
As shown in fig. 1, an induction coil 300 is provided outside the reaction chamber 100 to heat the reaction chamber of the graphite chamber 100.
The graphite chamber 200 also includes an upstream heat shield 230 and a downstream heat shield 240. Along the flow direction of the process gas stream, an upstream heat shield 230 is disposed at an end of the upper half month 211 and the lower half month 221 upstream, and a downstream heat shield 240 is disposed at an end of the upper half month 211 and the lower half month 221 downstream.
When the graphite chamber 200 is installed outside the reaction chamber 100 and then integrally placed into the reaction chamber 100, if the upper half month 211 and the lower half month 221 are misplaced, the end faces of the upper half month 211 and the lower half month 221 are located on different planes, and then the upstream heat shield 230 or the downstream heat shield 240 attached to the end faces of the upper half month 211 and the lower half month 221 are tilted, and at this time, whether the upper half month 211 and the lower half month 221 have position deviation can be judged by detecting whether the upstream heat shield 230 and the downstream heat shield 240 are placed along the vertical direction. As shown in fig. 1, if there is no misalignment between the upper half month 211 and the lower half month 221, the upstream heat shield 230 and the downstream heat shield 240 are attached to the end faces of the upper half month 211 and the lower half month 221, and are kept in a vertical direction.
In a specific embodiment of the disclosure, the distance measuring device includes an upstream distance measuring device 400, where the upstream distance measuring device 400 is disposed on the air inlet flange 120, and the included angle between the upstream heat shield 230 and the vertical direction can be determined by detecting the positions of at least two positioning points of the upstream heat shield 230 in the vertical direction along the change of the distance measuring angle. If the included angle between the upstream heat shield 230 and the vertical direction is within the preset angle range, it indicates that there is no dislocation between the upper half month 211 and the lower half month 221, and the installation position of the graphite chamber 200 can be positioned by the distance between the air inlet flange 120 and the upstream heat shield 230. If there is a misalignment, an adjustment in the position of the upper half month 211, the lower half month 221, the upstream heat shield 230, and the downstream heat shield 240 is required.
In another specific embodiment disclosed in the present invention, the ranging device includes a downstream ranging device 410, where the downstream ranging device 410 is disposed on the exhaust flange 130, and the included angle between the downstream heat shield 240 and the vertical direction can be determined by detecting the positions of at least two positioning points of the downstream heat shield 240 in the vertical direction along with the change of the ranging angle. If the included angle between the downstream heat shield 240 and the vertical direction is within the preset angle range, it indicates that there is no misalignment between the upper half month 211 and the lower half month 221, and the installation position of the graphite chamber 200 can be positioned by the distance between the air inlet flange 120 and the upstream heat shield 230.
The preset angle may be set according to actual requirements, for example, in a range of ±2°, and it is determined that the upstream heat shield 230 or the downstream heat shield 240 is not inclined.
Since the positions of the end surfaces of the upper half month 211 and the lower half month 221 are located on different planes when the horizontal deviation (dislocation) occurs, and the upstream heat shield 230 and the downstream heat shield 240 are inclined, by selecting positioning points located at different heights, whether the upstream heat shield 230 and the downstream heat shield 240 are inclined or not can be measured when the upper half month 211 and the lower half month 221 are misplaced. Or directly by comparing with the marked distance, whether the upstream heat shield 230 and the downstream heat shield 240 are inclined or not and whether the installation position is accurate or not can be directly obtained.
For example, at least one of the positioning points is at the same height as the upstream ranging device 400 or the downstream ranging device 410, so that the upstream ranging device 400 or the downstream ranging device 410 can directly obtain the relative distance between the graphite chamber 200 and the reaction chamber 100, and the other positioning points can be measured by changing the ranging angle of the upstream ranging device 400 or the downstream ranging device 410. And the interval between the positioning points is controlled to be larger so that the detection result of the upstream ranging device 400 or the downstream ranging device 410 is more obvious when the upstream heat shield 230 and the downstream heat shield 240 are inclined in the presence of the positions.
When the upstream ranging device 400 is a laser ranging device, the upstream ranging device 400 emits a plurality of laser pulses to the upstream heat shield 230 and counts time, when the reflected light is received, the count time is stopped, whether the upstream heat shield 230 is placed right or not can be determined by the time required for round trip, and when the upstream heat shield 230 is placed right, the installation position between the graphite chamber 200 and the reaction chamber 100 can be determined by the distance between the upstream ranging device 400 and the upstream heat shield 230. Correspondingly, the downstream ranging device 410 may also be a laser ranging device.
It should be noted that, the upstream ranging device 400 and the downstream ranging device 410 may be configured at the same time, and the positioning points may be configured in multiple numbers, so as to improve the positioning accuracy.
As shown in fig. 6 and 8, the upstream heat shield 230 is provided with vent holes for purging the upper half month 211 and the lower half month 221, vent holes for supplying power to the power tray 250, functional holes for measuring temperature, and square slots for flowing out process gas, the downstream heat shield 240 is provided with vent holes for purging the upper half month 211 and the lower half month 221, and square slots for flowing in process gas, and positioning points should be set to avoid the positions of these structural holes to avoid errors in making distance measurement.
After confirming the positions of the graphite chamber 200 and the reaction chamber 100, an air intake assembly is installed between the upstream heat shield 230 and the air intake flange 120, and an exhaust gas treatment assembly is installed between the downstream heat shield 240 and the exhaust flange 130 to achieve the fixation of the positions of the graphite chamber 200 and the reaction chamber 100, wherein the exhaust gas treatment assembly includes a quartz cylinder, an exhaust gas treatment barrel, etc.
To achieve thermal insulation of the reaction chamber, the graphite chamber 200 further includes an upper graphite insulation layer 210 and a lower graphite insulation layer 220. The upper graphite thermal insulation layer 210 is disposed between the upper half month 211 and the graphite chamber 200, and the lower graphite thermal insulation layer 220 is disposed between the lower half month 221 and the graphite chamber 200 and is buckled with the upper graphite thermal insulation layer 210. At the same time, the upstream heat shield 230 and the downstream heat shield 240 also have a heat insulating effect, which reduces heat diffusion. The graphite upper thermal insulation layer 210, the graphite lower thermal insulation layer 220, the upstream thermal insulation shield 230 and the downstream thermal insulation shield 240 together form a thermal insulation layer for insulating the reaction chamber.
Referring to fig. 3 and 4, an upper positioning portion is provided on the upper graphite thermal insulation layer 210, and a lower positioning portion for being fastened with the upper positioning portion is provided on the lower graphite thermal insulation layer 220. The upper and lower positioning portions may be positioning steps.
As shown in fig. 2 and 5, the upper graphite insulation layer 210 is provided with a limit step in which the upstream heat shield 230 and the downstream heat shield 240 are embedded, and the lower graphite insulation layer 220 is provided with a limit step in which the upstream heat shield 230 and the downstream heat shield 240 are embedded. Referring to fig. 7 and 9, the upstream heat shield 230 and the downstream heat shield 240 are provided with an insertion step for inserting the stopper step.
The distance measuring device can be a plurality of distance measuring elements such as a laser distance measuring device or an ultrasonic distance measuring device, and only the automatic distance measuring function can be realized.
The terms first and second and the like in the description and in the claims and in the above-described figures are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to the listed steps or elements but may include steps or elements not expressly listed.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description is only illustrative of the preferred embodiments of the present application and the principles of the technology applied, and is not intended to limit the present application. Various modifications and changes may be made to the present application by those skilled in the art. The scope of the application is not limited to the specific combination of the technical features described above, but also covers other technical solutions formed by any combination of the technical features described above or their equivalents without departing from the concept of the application described above. Such as the above-described features and technical features having similar functions (but not limited to) disclosed in the present application are replaced with each other.
Claims (10)
1. An epitaxial reactor comprising a graphite chamber (200) and a reaction chamber (100), the graphite chamber (200) comprising an upper half-month (211) and a lower half-month (221), the upper half-month (211) and the lower half-month (221) both being disposed in the reaction chamber (100), and an air flow channel (201) for a process air flow to pass through being formed between the upper half-month (211) and the lower half-month (221), characterized by further comprising:
distance measuring means for determining the position of the upper half-moon (211) and the lower half-moon (221) inside the reaction chamber (100) to achieve the positioning of the graphite chamber (200).
2. The epitaxial reactor of claim 1, wherein the reaction chamber (100) comprises:
a quartz bell jar (110), the graphite chamber (200) being disposed within the quartz bell jar (110);
an air inlet flange (120) arranged at a first end of the quartz bell jar (110);
and an exhaust flange (130) disposed at a second end of the quartz bell jar (110) and along a flow direction of the process gas stream, the inlet flange (120) being located upstream of the exhaust flange (130).
3. The epitaxial reactor of claim 2, wherein the ranging device comprises:
the first distance measuring piece is arranged on a first flange and is used for measuring the distance between the upper half month (211) and the first flange, and the first flange is the air inlet flange (120) or the tail gas flange (130);
and the second distance measuring piece is arranged on a second flange and is used for measuring the distance between the lower half moon (221) and the second flange, and the second flange is the air inlet flange (120) or the tail gas flange (130).
4. The epitaxial reactor of claim 2, wherein the graphite chamber (200) further comprises:
an upstream heat shield (230), the upstream heat shield (230) being disposed at an end of the upper half-month (211) and the lower half-month (221) upstream in a flow direction of a process gas flow;
a downstream heat shield (240), the downstream heat shield (240) being disposed at an end of the upper half-month (211) and the lower half-month (221) downstream in a flow direction of the process gas flow.
5. The epitaxial reactor of claim 4, wherein the ranging device comprises an upstream ranging device (400), wherein the upstream ranging device (400) is arranged on the air inlet flange (120) and is used for detecting positions of at least two locating points of different heights of the upstream heat shield (230) along the vertical direction so as to judge an included angle between the upstream heat shield (230) and the vertical direction;
and if the included angle between the upstream heat shield (230) and the vertical direction is within a preset angle range, positioning the graphite chamber (200) through the distance between the air inlet flange (120) and the upstream heat shield (230).
6. The epitaxial reactor of claim 4, wherein the ranging device comprises a downstream ranging device (410), the downstream ranging device (410) being disposed on the exhaust flange (130) and configured to detect positions of at least two positioning points of the downstream heat shield (240) at different heights along a vertical direction so as to determine an included angle between the downstream heat shield (240) and the vertical direction;
and if the included angle between the downstream heat shield (240) and the vertical direction is within a preset angle range, positioning the graphite chamber (200) through the distance between the tail gas flange (130) and the downstream distance measuring device (410).
7. The epitaxial reactor of claim 4, wherein the graphite chamber (200) further comprises:
an upper graphite insulation layer (210) disposed between the upper half-moon (211) and the graphite chamber (200);
the graphite lower heat preservation (220) is arranged between the lower half month (221) and the graphite chamber (200) and buckled with the graphite upper heat preservation (210), and the graphite upper heat preservation (210), the graphite lower heat preservation (220), the upstream heat shield (230) and the downstream heat shield (240) form a heat preservation.
8. The epitaxial reactor of claim 7, wherein the upper graphite thermal insulation layer (210) is provided with an upper positioning portion, and the lower graphite thermal insulation layer (220) is provided with a lower positioning portion for buckling with the upper positioning portion.
9. Epitaxial reactor according to claim 7, characterized in that the upper graphite insulation layer (210) is provided with a limit step in which the upstream heat shield (230) and the downstream heat shield (240) are embedded;
the graphite lower heat insulation layer (220) is provided with a limiting step for embedding the upstream heat insulation cover (230) and the downstream heat insulation cover (240).
10. Epitaxial reactor according to any one of claims 1 to 9, characterized in that the distance measuring device is a laser distance measuring device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554381.7A CN116516471A (en) | 2023-05-16 | 2023-05-16 | Epitaxial reactor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554381.7A CN116516471A (en) | 2023-05-16 | 2023-05-16 | Epitaxial reactor |
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| CN202310554381.7A Pending CN116516471A (en) | 2023-05-16 | 2023-05-16 | Epitaxial reactor |
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