CN116510187B - Implantable photoelectrode device and preparation method thereof - Google Patents
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Classifications
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- A61N5/00—Radiation therapy
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- A61N5/0622—Optical stimulation for exciting neural tissue
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- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N5/0601—Apparatus for use inside the body
- A61N2005/0612—Apparatus for use inside the body using probes penetrating tissue; interstitial probes
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- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
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- A61N2005/0632—Constructional aspects of the apparatus
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- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
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- A61N2005/065—Light sources therefor
- A61N2005/0651—Diodes
Abstract
The application relates to the technical field of optical waveguides, in particular to an implantable photoelectrode device and a preparation method thereof.
Description
Technical Field
The application relates to the technical field of optical waveguides, in particular to an implantable photoelectrode device and a preparation method thereof.
Background
In optogenetic technology, photoelectrodes are implantable devices that direct light into the brain to regulate and record neuronal activity. Currently, the light sources of the photoelectrodes mainly include two types of LED (Micro Light Emitting Diode, LED) and LD light source (Laser Diode, LD, semiconductor Laser).
When the mu LED is used as a light source, the mu LED is directly arranged on the recording electrode and provides light stimulation, the mu LED emits more heat while emitting light, so that nerve cell burn is easy to cause, and when a plurality of point position stimulations are needed, a plurality of mu LEDs are needed to be arranged, so that the size of a photoelectrode device is larger; when the LD is used as a light source, light emitted by the LD directly enters the optical waveguide by taking the optical fiber as a medium, the optical waveguide conducts the light to the vicinity of the recording electrode and provides optical stimulation, and the stimulated point is not influenced by the heat of the LD light source because the light source is far away from the stimulated point; in addition, the multi-point optical stimulation can be realized by only a single LD light source and combining the light path beam splitting design of the optical waveguide, so that the compactness of the photoelectrode device is ensured; further, the biocompatibility and the waterproofness of the optical waveguide are better than those of the mu LED.
However, due to the characteristics of the single-point light source of the LD light source, whether single-point stimulation is directly performed by using a single straight-through optical waveguide or multi-point stimulation is performed by using optical path splitting, the light output (stimulation amount) of each optical stimulation point is fixed, and therefore, the sensitivity threshold of the cell cannot be studied.
Therefore, it is necessary to design a new photoelectrode device based on an LD light source and an optical waveguide structure and to use for neural stimulation of brain implantation, thereby achieving light stimulation amount adjustment.
In view of the above problems, no effective technical solution is currently available.
Disclosure of Invention
The application aims to provide an implantable photoelectrode device and a preparation method thereof, which can realize the control of the light stimulation quantity of a stimulated point position, thereby being beneficial to the research of the sensitivity threshold value of cells.
The application provides an implantable photoelectrode device, which comprises a substrate, wherein the substrate is provided with a side part and a probe part, the side part is connected with the probe part, and a light source module is arranged on the side part;
the probe part is provided with a recording electrode, and a conical optical fiber, an optical switch assembly and an output grating which are sequentially connected through a first optical wave channel, wherein the conical optical fiber is connected with the light source module and is used for coupling the optical waves of the light source module, the optical switch assembly is used for realizing the on/off and luminous flux adjustment of the first optical wave channel by adjusting the temperature, the recording electrode is opposite to the output grating, and the output grating is used for focusing the light adjusted by the optical switch assembly above the recording electrode so as to provide controllable light stimulation.
The application realizes the control of the light stimulation quantity of the stimulated point position by the arrangement, and is beneficial to the research of the sensitivity threshold value of cells.
Optionally, the optical fiber recording device comprises a first optical wave channel, an optical switch assembly, an output grating and a recording electrode, wherein the first optical wave channel is used for sequentially connecting the tapered optical fiber, the optical switch assembly and the output grating, and the recording electrode is opposite to the output grating.
The tapered optical fiber, the optical switch component and the output grating are sequentially connected through the first optical wave channel, so that the optical switch component can adjust the temperature to realize the on/off and luminous flux adjustment of the first optical wave channel, the size control of the optical stimulation quantity of a single stimulated point location is realized, and the research of the sensitivity threshold of cells is facilitated.
Optionally, the optical fiber recording device comprises a plurality of first optical wave channels, a plurality of optical switch assemblies, a plurality of output gratings and a plurality of recording electrodes, and further comprises a waveguide beam splitter, wherein the input end of the waveguide beam splitter is connected with the output end of the tapered optical fiber, the plurality of output ends of the waveguide beam splitter are respectively connected with one first optical wave channel, each first optical wave channel is used for sequentially connecting one optical switch assembly with one output grating, and each recording electrode is opposite to each output grating in a one-to-one correspondence manner.
By arranging the waveguide beam splitter, the selection of a plurality of stimulated points and the control of the light stimulation quantity of each stimulated point can be realized, and the differential stimulation of a plurality of cells can be studied at the same time.
Optionally, the optical switch assembly includes an optical switch and a heating electrode, the heating electrode is disposed on the optical switch, and the heating electrode is used for heating the optical switch to realize on/off of the first optical wave channel and light flux adjustment.
Optionally, the optical switch is a mach-zehnder optical switch having two oppositely disposed phase-shifting arms, and the heating electrode is configured to heat one of the phase-shifting arms.
Optionally, the width of the tapered optical fiber is gradually reduced from one end close to the light source module to one end far away from the light source module, the longitudinal direction of the tapered optical fiber is parallel to the direction of the central axis of the tapered optical fiber, the width direction of the tapered optical fiber is perpendicular to the longitudinal direction, and the two end points of the output end of the tapered optical fiber and the positions of the edge points of the adjacent side edges on the tapered optical fiber satisfy the following relationship:
;
in the method, in the process of the application,a first normalization for the distance between the edge point and the adjacent end point in the width directionThe value of the transformation, e is the base of natural logarithm, < ->Is a second normalized value of the distance in the longitudinal direction between the edge point and the adjacent end point.
Optionally, the light wave energy of the output end of the optical switch meets the following conditions:
；
in the method, in the process of the application,for the light wave energy of the optical switch output, +.>Is the wave function of the input end of the Mach-Zehnder optical switch, < >>Is the incident wavelength of the optical switch input, < >>Is the effective refractive index difference of the first optical channel before and after heating, < ->Is the length of the phase shifting arm.
Optionally, a first cladding layer is disposed above the substrate, the first cladding layer wraps all the optical switches, and a vacuum enclosed space is enclosed between the first cladding layer, the two phase-shifting arms and the substrate to isolate heat transfer between the two phase-shifting arms.
Optionally, the spacing between two adjacent optical switch assemblies is greater than 0.3um.
In a second aspect, the present application provides a method for preparing an implantable photoelectrode device, the method comprising the steps of:
s1: based on a silicon-on-insulator silicon wafer, the preparation of a first light wave channel, an optical switch assembly, a plurality of output gratings and a plurality of recording electrodes is realized by using technologies including spin coating, vacuum evaporation, photoetching, wet etching, reactive ion etching, bonding, deep silicon etching and low-pressure chemical vapor deposition;
s2: through MEMS technology, utilize the optic fibre constant head tank to realize the alignment of toper optic fibre and light waveguide input, utilize the light source standing groove to realize the LD light source with the alignment of toper optic fibre, realize the bonding of LD bonding pad and LD light source standing groove and LD light source through ACF conducting resin, realize the preparation of light source module.
The beneficial effects are that: the application provides an implantable photoelectrode device, which is characterized in that a recording electrode, a conical optical fiber, an optical switch assembly and an output grating are arranged on a probe part, wherein the conical optical fiber, the optical switch assembly and the output grating are sequentially connected through a first optical wave channel, the conical optical fiber is connected with a light source module and is used for coupling optical waves of the light source module, the optical switch assembly is used for realizing the on-off and luminous flux adjustment of the first optical wave channel by adjusting the temperature, the recording electrode is arranged opposite to the output grating, and the output grating is used for focusing the light adjusted by the optical switch assembly above the recording electrode so as to provide controllable optical stimulation quantity, thereby realizing the size control of the optical stimulation quantity of a stimulated point location and being beneficial to the research of a sensitivity threshold value of cells.
Drawings
Fig. 1 is a schematic diagram of an overall structure of an implantable photoelectrode device according to the present application.
Fig. 2 is a schematic structural diagram of an implantable photoelectrode device according to the present application.
Fig. 3 is a schematic structural diagram of an optical switch provided by the present application.
Fig. 4 is a schematic diagram showing a simulation effect of the implantable photoelectrode device according to the present application.
FIG. 5 is a schematic diagram of the light field effect at point A in FIG. 4.
FIG. 6 is a schematic diagram of the light field effect at point B in FIG. 4.
Fig. 7 is a schematic diagram of a tapered optical fiber according to the present application in a top view.
Description of the reference numerals: 11. a side portion; 12. a probe section; 13. a first optical wave channel; 14. a light source module; 21. a tapered optical fiber; 22. an optical switch; 221. a phase shifting arm; 23. heating the electrode; 24. outputting a grating; 25. a recording electrode; 30. a waveguide beam splitter; 41. a first bonding pad; 42. a power supply pad; 43. a bond pad; 44. a controller; 45. a second bonding pad; 46. an external power source.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the application, as presented in the figures, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
Referring to fig. 1-7, fig. 1 is a schematic diagram of an overall structure of an implantable photoelectrode device according to an embodiment of the present application, so as to control the light stimulation amount of a stimulated point, thereby facilitating the study of a sensitivity threshold of a cell.
The application provides an implantable photoelectrode device, which comprises a substrate, wherein the substrate is provided with a side part 11 and a probe part 12, the side part 11 is connected with the probe part 12, and a light source module 14 is arranged on the side part 11;
the probe portion 12 is provided with a recording electrode 25, and a tapered optical fiber 21, an optical switch assembly and an output grating 24 which are sequentially connected through the first optical wave channel 13, wherein the tapered optical fiber 21 is connected with the light source module 14 and is used for coupling optical waves of the light source module 14, the optical switch assembly is used for realizing the on/off and luminous flux adjustment of the first optical wave channel 13 by adjusting the temperature, the recording electrode 25 is arranged opposite to the output grating 24, and the output grating 24 is used for focusing light adjusted by the optical switch assembly above the recording electrode 25 so as to provide controllable optical stimulation.
Specifically, the probe portion 12 is provided with the recording electrode 25, and the tapered optical fiber 21, the optical switch assembly and the output grating 24 which are sequentially connected through the first optical wave channel 13, the tapered optical fiber 21 is connected with the light source module 14 and is used for coupling the optical waves of the light source module 14, the optical switch assembly is used for realizing the on/off and luminous flux adjustment of the first optical wave channel 13 by adjusting the temperature, the recording electrode 25 is arranged opposite to the output grating 24, the output grating 24 is used for focusing the light adjusted by the optical switch assembly above the recording electrode 25 so as to provide controllable light stimulation amount, thereby realizing the control of the light stimulation amount of the stimulated point location, being beneficial to the research of the sensitivity threshold value of cells, and the recording electrode 25 is used for forming corresponding electric signals by the feedback of the cells to the light.
In some embodiments, the optical fiber system comprises a first optical wave channel 13, an optical switch assembly, an output grating 24 and a recording electrode 25, wherein the first optical wave channel 13 connects the tapered optical fiber 21, the optical switch assembly and the output grating 24 in sequence, and the recording electrode 25 is arranged opposite to the output grating 24.
The output grating 24 and the recording electrode 25 are both of the prior art, and are not described in detail herein.
Specifically, as shown in fig. 1, the tapered optical fiber 21, the optical switch assembly and the output grating 24 are sequentially connected through a first optical wave channel 13, so that the optical switch assembly adjusts the temperature to realize the on/off and luminous flux adjustment of the first optical wave channel 13, thereby realizing the control of the optical stimulation quantity of a single stimulated point location, and being beneficial to the research of the sensitivity threshold of cells.
In some embodiments, the optical fiber recording device comprises a plurality of first optical wave channels 13, a plurality of optical switch assemblies, a plurality of output gratings 24 and a plurality of recording electrodes 25, and further comprises a waveguide beam splitter 30, wherein an input end of the waveguide beam splitter 30 is connected with an output end of the tapered optical fiber 21, a plurality of output ends of the waveguide beam splitter 30 are respectively connected with one first optical wave channel 13, each first optical wave channel 13 sequentially connects one optical switch assembly and one output grating 24, and each recording electrode 25 is arranged opposite to each output grating 24 in a one-to-one correspondence manner.
Specifically, as shown in fig. 2, by providing the waveguide beam splitter 30, selection of a plurality of stimulated sites and control of the light stimulation amount of each stimulated site can be realized, which is beneficial to research on differential stimulation of a plurality of cells at the same time.
In some embodiments, the optical switch assembly includes an optical switch 22 and a heating electrode 23, the heating electrode 23 is disposed on the optical switch 22, and the heating electrode 23 is used to heat the optical switch 22 to implement the on/off of the first optical wave channel 13 and the light flux adjustment.
Specifically, by providing the optical switch 22 and the heating electrode 23, the on, off, and light flux adjustment of the first optical wave channel 13 can be controlled, respectively, as shown in fig. 1, 1 optical switch 22 and 1 heating electrode 23 are provided in this embodiment, and the temperature of the optical switch 22 is adjusted by the heating electrode 23, so that the phase of the optical wave in the optical switch 22 is changed to realize the on, off, and light flux adjustment of the first optical wave channel 13; as shown in fig. 2, in this embodiment, a plurality of optical switches 22 and a plurality of heating electrodes 23 are provided, and the temperature of the corresponding optical switch 22 is adjusted by the heating electrodes 23, so that the phase of the light wave in the corresponding optical switch 22 is changed to realize the on/off and the light flux adjustment of the corresponding first light wave channel 13, and the specific number of the optical switches 22 and the heating electrodes 23 in the embodiment shown in fig. 2 can be set according to actual needs.
In some embodiments, the light source module 14 is an LD light source.
Specifically, by setting the light source module 14 as an LD light source and combining the tapered optical fiber 21, the waveguide beam splitter 30, the optical switch assembly, the plurality of output gratings 24 and the plurality of recording electrodes 25, brain stimulation can be realized, the overall device size is small, the structure is compact, and the damage degree to brain tissues during brain implantation is small.
In some embodiments, the optical switch 22 is a mach-zehnder type optical switch having two oppositely disposed phase-shifting arms 221, and the heating electrode 23 is used to heat one of the phase-shifting arms 221.
Specifically, as shown in fig. 1 and fig. 2, in both embodiments, the heating electrode 23 is provided to heat one of the phase-shifting arms 221 to realize the on/off and luminous flux adjustment of the corresponding first optical channel 13 (which refers to the first optical channel 13 connected to the output end of the optical switch 22), in practical application, the first optical channel 13 can be opened only by not heating the heating electrode 23, if the first optical channel 13 needs to be closed, the heating electrode 23 is operated, the refractive index of the heating electrode 23 corresponding to the heated phase-shifting arm 221 is changed (the magnitude of the refractive index is related to the magnitude of the power of the heating electrode 23), so that the phase of the optical wave in the phase-shifting arm 221 is changed, and the phase of the optical wave of the other phase-shifting arm 221 not provided with the heating electrode 23 is not changed, then, after the converging the optical waves of different phases of the two phase-shifting arms 221 at the output end of the optical switch 22, the two optical waves of the two phase-shifting arms 221 are mutually offset each other under the conditions that the magnitude of the optical wave of the two optical channels 221 is identical and the phase-shifting arms are opposite, and the energy of the output end of the optical switch 22 is 0, so as to realize the closing of the first channel 13; in order to adjust the light flux, the power of the heating electrode 23 can be adjusted to make the output light wave energy of the phase-shifting arm 221 corresponding to the heating electrode 23 different from the light wave energy of the unheated phase-shifting arm 221, and the phases are opposite, so that the required light flux is adjusted, and the light flux is controllable; in the specific structure of the optical switch shown in fig. 3, in some embodiments, the cross-sectional dimensions of the input end and the output end of the phase shift arm 221 are: the width is 2um and the height is 1um, the included angle (at e in fig. 3) between the two phase-shifting arms 221 is 30 °, and the total length of the two phase-shifting arms 221 is 4mm.
Wherein the light wave propagates in a single mode transmission manner in the present application.
In some embodiments, the heating electrodes 23 of each optical switch 22 are disposed on the phase-shifting arm 221 on the same side, as shown in fig. 2, to further reduce interference of the heating electrodes 23 with adjacent phase-shifting arms 221.
In some embodiments, the width of the tapered optical fiber 21 gradually decreases from one end near the light source module 14 to one end far from the light source module 14, the longitudinal direction of the tapered optical fiber 21 is parallel to the direction of the central axis of the tapered optical fiber 21, the width direction of the tapered optical fiber 21 is perpendicular to the longitudinal direction, and the following relationship is satisfied between two end points of the output end of the tapered optical fiber 21 and positions of edge points of adjacent sides on the tapered optical fiber 21:
;
in the method, in the process of the application,a first normalized value of the distance between the edge point and the adjacent end point in the width direction, e is the base of natural logarithm,>is a second normalized value of the distance in the longitudinal direction between the edge point and the adjacent end point.
As shown in fig. 7, the vertical direction in fig. 7 is the longitudinal direction, the horizontal direction is the width direction, the first normalized value is the ratio of the distance from the edge point to the adjacent end point to the reference distance, the second normalized value is the ratio of the distance between the edge point and the adjacent end point in the longitudinal direction to the distance from the input end face to the output end face of the tapered optical fiber 21, and the reference distance is one half of the difference of the width of the input end face minus the width of the output end face of the tapered optical fiber 21.
Specifically, the tapered optical fiber 21 can convert the mode of the light emitted from the light source module 14 (i.e., LD light source) into the mode of the light in the optical waveguide, and the tapered optical fiber 21 of the present application can improve the transmission efficiency of the tapered optical fiber 21 by satisfying the above conditions, and can reach more than 90%, and if the conventional tapered waveguide is adopted in a linear relationship, the transmission efficiency is low.
In some embodiments, the width of the input end of the tapered optical fiber 21 is 150um, the width of the output end of the tapered optical fiber 21 is 2um, and the thickness of the tapered optical fiber 21 is 1um.
Specifically, by setting the specific size of the tapered optical fiber 21, the taper pattern of the width of the tapered optical fiber 21 is satisfied.
In some embodiments, the light wave energy at the output of the optical switch 22 satisfies the following condition:
；
in the method, in the process of the application,for the light energy at the output of the optical switch 22, < >>Is the wave function of the input end of Mach-Zehnder optical switch,>is the incident wavelength at the input of the optical switch 22, < >>Is the effective refractive index difference of the first optical channel 13 before and after heating, +.>Is the length of the phase shift arm 221.
Specifically, the light wave energy at the output end of the optical switch 22 of the present application satisfies the above conditions, thereby controlling the luminous flux at the output end of the optical switch 22 to vary within the range of 0-1 to 1, and the present application verifies through the simulation of the beam PROP software, as shown in FIGS. 4, 5 and 6, the abscissa in FIG. 4 represents the temperature, the ordinate represents the light wave energy, the X-axis in FIGS. 5 and 6 represents the width, the Z-axis represents the length, and the energy at the output end of the optical switch 22 after the temperature of the corresponding phase shift arm 221 is raised by the heating electrode 23And periodically varies between 0 and 1. Wherein when the electrode 23 is heated to 34℃ for the corresponding phase-shifting arm 221At that time (fig. 4, a schematic diagram of the light field effect corresponding to a is shown in fig. 5), the energy of the light wave at the output end of the optical switch 22 is about 95%; when the heating temperature is 38 ℃ (the corresponding light field effect at B in fig. 4 is schematically shown in fig. 6), the light wave energy at the output end of the optical switch 22 is about 5%; the energy of the light wave at the output of the optical switch 22 is about 50% when the heating temperature is 36 c. Accordingly, the heating electrode 23 can be controlled to control the light wave energy of the output end of the optical switch 22, so that the luminous flux of the corresponding first light wave channel 13 is adjusted, and the optical stimulation quantity at the corresponding output grating 24 is adjusted.
In some embodiments, a first cladding layer is disposed over the substrate, the first cladding layer surrounding all of the optical switches 22, the first cladding layer, the two phase-shifting arms 221, and the substrate enclosing a vacuum enclosure therebetween to insulate heat transfer between the two phase-shifting arms 221.
Specifically, in order to isolate heat transfer between the two phase-shifting arms 221, the first cladding is specially provided in the application, so that the space between the two phase-shifting arms 221 in the optical switch 22 is in a vacuum environment, and the interference of the heating electrode 23 on the adjacent phase-shifting arms 221 can be effectively reduced.
In some embodiments, the spacing between adjacent two optical switch assemblies is greater than 0.3um.
Specifically, as shown in fig. 3, the interval between two adjacent optical switch assemblies (i.e., the interval between two adjacent phase-shifting arms 221 on two optical switches 22, as shown in d in fig. 3) is set to be greater than 0.3um, which is advantageous in reducing the interference degree of the heating electrodes 23 in two adjacent optical switches 22, so as to more accurately adjust the luminous flux of each first optical wave channel 13.
In some embodiments, the output grating 24 has an arcuate grating scale with any point coordinates on the scale,) The phase matching condition is satisfied: />Wherein->Is the diffraction order>Is the incident wavelength, +.>Is the effective refractive index of the output grating 24, < >>Is the ambient refractive index, +.>Is the light wave exit angle so that the light waves in the output grating 24 are emitted at a specific angle.
In some embodiments, the first bonding pad 41, two power supply pads 42, and two bonding pads 43 are disposed on the side 11, the first bonding pad 41 is connected to the recording electrode 25 and an external electrophysiology workstation (in the related art, not described in detail herein), the two bonding pads 43 are respectively connected to the positive and negative electrodes of the light source module 14, and the two bonding pads 43 are also respectively connected to the two power supply pads 42 to connect the positive and negative electrodes of the external power source 46, wherein the number of the first bonding pads 41 may be correspondingly disposed according to the number of the recording electrodes 25, as shown in fig. 1 and 2.
In some embodiments, the probe portion 12 is provided with a controller 44 and a second pad 45, the second pad 45 is connected to the controller 44, the heating electrode 23 is connected to the second pad 45, the controller 44 is used to control the power of the heating electrode 23, and the number of the second pads 45 is correspondingly set according to the number of the heating electrodes 23, as shown in fig. 1 and 2.
In a second aspect, the present application provides a method for preparing an implantable photoelectrode device, the method comprising the steps of:
s1: the preparation of the first optical wave channel 13, the optical switch assembly, the plurality of output gratings 24 and the plurality of recording electrodes 25 is realized based on a silicon-on-insulator wafer by using technologies including spin coating, vacuum evaporation, lithography, wet etching, reactive ion etching, bonding, deep silicon etching and low-pressure chemical vapor deposition;
s2: the light source module 14 is prepared by aligning the tapered optical fiber 21 with the optical waveguide input end by the MEMS technique using the optical fiber positioning groove, aligning the LD light source with the tapered optical fiber 21 using the light source placing groove, and bonding the LD bonding pad 43 with the LD light source placing groove and the LD light source by the ACF conductive adhesive.
Specifically, the preparation method can prepare the implantable photoelectrode device.
In some embodiments, the specific process of step S1 includes:
(1) Taking a silicon wafer on an insulator as a substrate, sequentially putting the silicon wafer into acetone, absolute ethyl alcohol and distilled water, respectively ultrasonically cleaning for 5 minutes, then drying the surface of the silicon wafer by using nitrogen, and putting the silicon wafer into an oven for baking until the silicon wafer is completely dried;
(2) Forming a polyimide film on the front surface of the silicon-on-insulator silicon wafer by using a spin coating technology as a lower insulating layer;
(3) Generating a layer of copper on the lower insulating layer by using a vacuum evaporation technology to serve as a conductive layer;
(4) Preparing photoresist on the conductive layer, and patterning the photoresist on the conductive layer by using a photolithography technique and making the photoresist into a mask;
(5) Patterning the conductive layer using wet etching techniques to form the recording electrode 25 and the conductive layer circuitry;
(6) Forming a polyimide film on the conductive layer by using a spin coating technology as an upper insulating layer;
(7) Preparing photoresist on the upper insulating layer, and patterning the photoresist of the upper insulating layer by using a photolithography technique and making the photoresist into a mask;
(8) The upper insulating layer is windowed using reactive ion etching techniques to expose the recording electrode 25;
(9) Preparing photoresist on the upper insulating layer again, and patterning the photoresist on the upper insulating layer into a mask by using a photolithography technique;
(10) Patterning the upper and lower insulating layers using a reactive ion etching technique;
(11) Depositing a silicon nitride film on the upper insulating layer by using a low-pressure chemical vapor deposition technology;
(12) Patterning the photoresist on the silicon nitride film twice using a photolithography technique and making it an optical waveguide layer structure having a first optical waveguide channel 13, an optical switching element, an output grating 24, and a recording electrode 25;
(13) Bonding a silicon dioxide film on the optical waveguide layer as a first cladding layer by using a bonding technology under a vacuum condition, and annealing at a high temperature in an inert gas environment to enhance the stability of a bonding interface;
(14) Generating a layer of aluminum on the first cladding layer by using a vacuum evaporation technology as a heating circuit layer;
(15) Patterning the photoresist on the heating circuit layer using a photolithography technique and making it a mask;
(16) Patterning the heating circuit layer using a wet etching technique to form a heating electrode 23 and a heating circuit;
(17) Generating a layer of photoresist on the front side and the back side of the silicon-on-insulator silicon wafer by using a spin coating technology;
(18) Patterning the photoresist on the back surface of the silicon-on-insulator wafer by using a photolithography technique and making the photoresist be a mask;
(19) Removing an oxide layer on the back surface of the silicon-on-insulator silicon wafer by using a reactive ion etching technology;
(20) Removing silicon on the back surface of the silicon-on-insulator silicon wafer by using a deep silicon etching technology;
(21) Removing the buried oxide layer on the back surface of the silicon wafer on the insulator by using a reactive ion etching technology;
(22) And placing the silicon wafer on insulator into acetone for photoresist removal.
Thus, by the above-described manufacturing method, the first optical wave channel 13, the optical switch assembly, the output grating 24, and the recording electrode 25 can be manufactured on the substrate.
In some embodiments, the process (12) in step S1 is specifically: the photoresist on the silicon nitride film is patterned twice using a photolithography technique and made into an optical waveguide layer structure having a plurality of first optical wave channels 13, a waveguide beam splitter 30, a plurality of optical switching elements, a plurality of output gratings 24, and a plurality of recording electrodes 25, and the other steps repeat the processes (1) - (11), (13) - (22) in step S1, thereby realizing the preparation of the plurality of first optical wave channels 13, the waveguide beam splitter 30, the plurality of optical switching elements, the plurality of output gratings 24, and the plurality of recording electrodes 25 on the substrate, and the detailed process will not be described herein.
In some embodiments, the specific process of step S2 includes:
(1) Placing the tapered optical fiber 21 into an optical fiber positioning groove and aligning and connecting the output end of the tapered optical fiber 21 with the input end of the optical waveguide;
(2) Attaching ACF conductive adhesive to the light source placing groove and performing light pressure;
(3) Placing the LD light source into a light source placing groove and aligning and connecting the output end of the LD light source with the input end of the tapered optical fiber 21;
(4) Attaching ACF conductive adhesive to LD light source and lightly pressing;
(5) The LD bond pads 43 are attached to ACF conductive adhesive and pressed with a certain pressure.
Thus, the preparation of the light source module 14 can be achieved through the specific procedure of step S2 described above.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. The above-described apparatus embodiments are merely illustrative, for example, the division of units is merely a logical function division, and there may be other manners of division in actual implementation, and for example, multiple units or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be through some communication interface, device or unit indirect coupling or communication connection, which may be in electrical, mechanical or other form.
Further, the units described as separate units may or may not be physically separate, and units displayed as units may or may not be physical units, may be located in one place, or may be distributed over a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
Furthermore, functional modules in various embodiments of the present application may be integrated together to form a single portion, or each module may exist alone, or two or more modules may be integrated to form a single portion.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above embodiments of the present application are only examples, and are not intended to limit the scope of the present application, and various modifications and variations will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (6)
1. An implantable photoelectrode device comprising a substrate, characterized in that the substrate is provided with a side part (11) and a probe part (12), the side part (11) is connected with the probe part (12), and a light source module (14) is arranged on the side part (11);
the probe part (12) is provided with at least one recording electrode (25), and a tapered optical fiber (21), at least one optical switch component and at least one output grating (24) which are sequentially connected through at least one first optical wave channel (13), wherein the tapered optical fiber (21) is connected with the light source module (14) and is used for coupling optical waves of the light source module (14), the optical switch component is used for realizing the on-off and luminous flux adjustment corresponding to the first optical wave channel (13) by adjusting the temperature, the recording electrodes (25) are arranged opposite to the output grating (24) in a one-to-one correspondence manner, and the output grating (24) is used for focusing the light adjusted by the optical switch component above the recording electrode (25) so as to provide controllable light stimulation;
the light waves of the light source module (14) are transmitted in a single-mode transmission mode;
the optical switch assembly comprises an optical switch (22) and a heating electrode (23), wherein the heating electrode (23) is arranged on the optical switch (22), and the heating electrode (23) is used for heating the optical switch (22) to realize the switching and the switching of the first optical wave channel (13) and the adjustment of luminous flux;
the optical switch (22) is a Mach-Zehnder optical switch with two opposite phase-shifting arms (221), and the heating electrode (23) is used for heating one of the phase-shifting arms (221);
the width of the tapered optical fiber (21) gradually becomes smaller from one end close to the light source module (14) to one end far away from the light source module (14), the longitudinal direction of the tapered optical fiber (21) is parallel to the direction of the central axis of the tapered optical fiber (21), the width direction of the tapered optical fiber (21) is perpendicular to the longitudinal direction, and the two end points of the output end of the tapered optical fiber (21) and the positions of the edge points of the adjacent side edges on the tapered optical fiber (21) meet the following relation:
;
in the method, in the process of the application,e is a base of natural logarithm, which is a first normalized value of the distance in the width direction between the edge point and the adjacent end point, +.>A second normalized value that is a distance in the longitudinal direction between the edge point and the adjacent end point;
a first cladding layer is arranged above the substrate, the first cladding layer wraps all the optical switches (22), and a vacuum closed space is formed by the first cladding layer, the two phase-shifting arms (221) and the substrate in a surrounding mode so as to isolate heat transfer between the two phase-shifting arms (221).
2. The implantable photoelectrode device according to claim 1, characterized by comprising one of said first lightwave circuit (13), one of said optical switch assemblies, one of said output gratings (24) and one of said recording electrodes (25), said first lightwave circuit (13) connecting said tapered optical fiber (21), said optical switch assembly and said output grating (24) in sequence, said recording electrode (25) being disposed opposite said output grating (24).
3. The implantable photoelectrode device according to claim 1, characterized by comprising a plurality of said first optical wave channels (13), a plurality of said optical switch assemblies, a plurality of said output gratings (24) and a plurality of said recording electrodes (25), further comprising a waveguide beam splitter (30), an input end of said waveguide beam splitter (30) being connected to an output end of said tapered optical fiber (21), a plurality of output ends of said waveguide beam splitter (30) being respectively connected to one of said first optical wave channels (13), each of said first optical wave channels (13) connecting one of said optical switch assemblies and one of said output gratings (24) in turn, and each of said recording electrodes (25) being arranged in one-to-one correspondence to each of said output gratings (24).
4. The implantable photoelectrode device according to claim 1, wherein the light wave energy at the output of said optical switch (22) satisfies the following condition:
；
in the method, in the process of the application,for the light wave energy at the output of the optical switch (22), -a switch for switching the light wave energy to the output of the optical switch (22)>Is the wave function of the input end of the Mach-Zehnder optical switch, < >>Is the incident wavelength of the input of the optical switch (22), -is>Is the effective refractive index difference of the first optical channel (13) before and after heating,/and>is the length of the phase shift arm (221).
5. An implantable photoelectrode device according to claim 3 wherein the spacing between adjacent two of said optical switch assemblies is greater than 0.3um.
6. A method of manufacturing an implantable photoelectrode device according to any of claims 1 to 5, wherein said method of manufacturing comprises the steps of:
s1: the preparation of at least one first optical wave channel (13), at least one optical switch assembly, at least one output grating (24) and at least one recording electrode (25) is realized on the basis of a silicon-on-insulator wafer using techniques including spin coating, vacuum evaporation, lithography, wet etching, reactive ion etching, bonding, deep silicon etching, low-pressure chemical vapor deposition;
s2: the method comprises the steps of realizing the alignment of a conical optical fiber (21) and an optical waveguide input end by utilizing an optical fiber positioning groove through MEMS technology, realizing the alignment of an LD light source and the conical optical fiber (21) by utilizing a light source placing groove, realizing the bonding of an LD bonding pad (43) and the LD light source placing groove and the LD light source by utilizing ACF conductive adhesive, and realizing the preparation of a light source module (14);
the specific process of the step S1 includes:
(1) Taking a silicon wafer on an insulator as a substrate, sequentially putting the silicon wafer into acetone, absolute ethyl alcohol and distilled water, respectively ultrasonically cleaning for 5 minutes, then drying the surface of the silicon wafer by using nitrogen, and putting the silicon wafer into an oven for baking until the silicon wafer is completely dried;
(2) Forming a polyimide film on the front surface of the silicon-on-insulator silicon wafer by using a spin coating technology as a lower insulating layer;
(3) Generating a layer of copper on the lower insulating layer by using a vacuum evaporation technology to serve as a conductive layer;
(4) Preparing photoresist on the conductive layer, and patterning the photoresist on the conductive layer by using a photolithography technique and making the photoresist into a mask;
(5) Patterning the conductive layer using wet etching techniques to form a recording electrode (25) and a conductive layer circuit;
(6) Forming a polyimide film on the conductive layer by using a spin coating technology as an upper insulating layer;
(7) Preparing photoresist on the upper insulating layer, and patterning the photoresist of the upper insulating layer by using a photolithography technique and making the photoresist into a mask;
(8) Windowing the upper insulating layer using reactive ion etching techniques to expose the recording electrode (25);
(9) Preparing photoresist on the upper insulating layer again, and patterning the photoresist on the upper insulating layer into a mask by using a photolithography technique;
(10) Patterning the upper and lower insulating layers using a reactive ion etching technique;
(11) Depositing a silicon nitride film on the upper insulating layer by using a low-pressure chemical vapor deposition technology;
(12) Patterning the photoresist on the silicon nitride film twice using a photolithography technique and making it an optical waveguide layer structure having a first optical waveguide channel (13), an optical switching element, an output grating (24) and a recording electrode (25);
(13) Bonding a silicon dioxide film on the optical waveguide layer as a first cladding layer by using a bonding technology under a vacuum condition, and annealing at a high temperature in an inert gas environment to enhance the stability of a bonding interface;
(14) Generating a layer of aluminum on the first cladding layer by using a vacuum evaporation technology as a heating circuit layer;
(15) Patterning the photoresist on the heating circuit layer using a photolithography technique and making it a mask;
(16) Patterning the heating circuit layer using a wet etching technique to form a heating electrode (23) and a heating circuit;
(17) Generating a layer of photoresist on the front side and the back side of the silicon-on-insulator silicon wafer by using a spin coating technology;
(18) Patterning the photoresist on the back surface of the silicon-on-insulator wafer by using a photolithography technique and making the photoresist be a mask;
(19) Removing an oxide layer on the back surface of the silicon-on-insulator silicon wafer by using a reactive ion etching technology;
(20) Removing silicon on the back surface of the silicon-on-insulator silicon wafer by using a deep silicon etching technology;
(21) Removing the buried oxide layer on the back surface of the silicon wafer on the insulator by using a reactive ion etching technology;
(22) And placing the silicon wafer on insulator into acetone for photoresist removal.
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