CN116503400A - Chip glue overflow thickness calculating method and electronic equipment - Google Patents

Chip glue overflow thickness calculating method and electronic equipment Download PDF

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Publication number
CN116503400A
CN116503400A CN202310756535.0A CN202310756535A CN116503400A CN 116503400 A CN116503400 A CN 116503400A CN 202310756535 A CN202310756535 A CN 202310756535A CN 116503400 A CN116503400 A CN 116503400A
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chip
image
glue overflow
glue
overflow
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CN202310756535.0A
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CN116503400B (en
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冀运景
刘鹏飞
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Shenzhen Mingrui Ideal Technology Co ltd
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Shenzhen Magic Ray Technology Co ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/10Segmentation; Edge detection
    • G06T7/13Edge detection
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/60Analysis of geometric attributes
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • G06T2207/30148Semiconductor; IC; Wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)

Abstract

The application relates to the technical field of semiconductor packaging, and discloses a method for calculating the flash thickness of a chip and electronic equipment, wherein the method comprises the following steps: acquiring a chip glue overflow image; determining a contour map of the chip glue overflow image according to the chip glue overflow image; determining the center lines of the glue overflow and the mirror images of the glue overflow according to the profile; and determining the overflow thickness of the chip according to the central line. According to the method and the device, the outline map of the chip glue overflow image is extracted, the center line of the glue overflow and the center line of the glue overflow mirror image are determined, the thickness of the chip glue overflow is further obtained, the clear outline map of the glue overflow and the clear outline map of the glue overflow mirror image can be obtained, and the thickness of the chip glue overflow can be accurately calculated.

Description

Chip glue overflow thickness calculating method and electronic equipment
Technical Field
The embodiment of the application relates to the technical field of semiconductor packaging, in particular to a method for calculating the flash thickness of a chip and electronic equipment.
Background
In general, in the process of assembling articles, the parts are sometimes bonded by glue, too much glue is inevitably injected, so that the situation that the glue overflows the surface after the parts are bonded is caused, the overflow of the glue may affect the functions of products, for example, a camera, if the glue overflows in the process of assembling a chip of the camera, the performance and the stability of the chip are easily affected by the glue overflow, and the photographing quality is further affected. Therefore, it is necessary to find out the glue overflow condition before the product is sold.
At present, because the optical detection system and the detected sample are not on the same plane when the sample is detected, the overflow glue thickness cannot be detected by using a 2D image, and when the overflow glue thickness is detected and reduced by using a 3D image, part of overflow glue information can be lost due to the fact that overflow glue is in a climbing mode, the accuracy of detecting the overflow glue thickness is further caused to be inaccurate, and when the side optical system is used for detection, the situation that clear overflow glue cannot be obtained or the overflow glue contour cannot be obtained due to insufficient shooting depth of field due to the limitation of a space structure and the like can occur, so that the chip overflow glue thickness cannot be accurately detected.
At present, the thickness of the glue overflow in the chip is usually detected by dividing the chip surface image acquired by the 3D camera, and the situation that the glue overflow contour is not acquired clearly enough, so that the calculation of the glue overflow thickness is inaccurate can occur.
Disclosure of Invention
In order to solve the technical problems, the embodiment of the application provides a method for calculating the chip glue overflow thickness and electronic equipment, which solve the problems that the chip glue overflow contour is not clear enough and the chip glue overflow thickness calculation is inaccurate, and can accurately calculate the chip glue overflow thickness.
In order to solve the technical problems, the embodiment of the application provides the following technical scheme:
In a first aspect, an embodiment of the present application provides a method for calculating a thickness of a flash of a chip, including:
acquiring a chip glue overflow image;
determining a contour map of the chip glue overflow image according to the chip glue overflow image;
determining the center lines of the glue overflow and the mirror images of the glue overflow according to the profile;
and determining the overflow thickness of the chip according to the central line.
In some embodiments, the chip includes a chip side that is operable to reflect glue spills to form a glue spilled image;
acquiring a chip glue overflow image, comprising:
acquiring a shooting angle;
and acquiring a chip glue overflow image based on the shooting angle, wherein the chip glue overflow image comprises glue overflow and glue overflow mirror images.
In some embodiments, determining a profile of the chip flash image from the chip flash image includes:
the contrast of the chip glue overflow image is adjusted, and binarization processing is carried out on the chip glue overflow image to obtain an original binary image;
performing background segmentation on the original binary image to obtain a target binary image, wherein the target binary image comprises a binary image of overflow glue and a binary image of overflow glue;
and carrying out contour extraction on the glue overflow and the glue overflow mirror image in the target binary image to obtain a contour image of the chip glue overflow image.
In some embodiments, the profile includes a profile of the flash and a profile of the flash image, and determining a centerline of the flash and the flash image from the profile includes:
Establishing a coordinate system based on the profile map, wherein the profile of the overflow glue and the profile of the overflow glue mirror image are both positioned in the coordinate system;
setting a pixel line at one end of the outline of the overflow glue, wherein the pixel line is parallel to the transverse axis of the coordinate system;
and determining the center line of the glue overflow and the mirror image of the glue overflow based on the movement of the pixel line on the coordinate system.
In some embodiments, determining a centerline of the flash to the flash image based on the movement of the line of pixels on the coordinate system includes:
moving pixel lines from pixel to pixel in the direction from the outline of the overflow glue to the outline of the overflow glue mirror image in a coordinate system, so that the pixel lines traverse the outline map;
acquiring the nearest point of each pixel point on the pixel line to the outline of the glue overflow, and marking the nearest point as a first outline point;
acquiring the nearest point of each pixel point on the pixel line from the outline of the glue overflow mirror image, and marking the nearest point as a second outline point;
the distance between the first contour point and the pixel line is set to be a first distance, and the distance between the second contour point and the pixel line is set to be a second distance;
calculating the distance ratio of the first distance to the second distance;
and determining the center line of the glue overflow and the mirror image of the glue overflow according to the distance proportion.
In some embodiments, determining the center line of the flash and the flash image according to the distance ratio includes:
Determining the score points on the pixel lines according to the distance proportion so as to determine the number of the score points on the same pixel line;
the number of score points for each pixel line is determined, and the pixel line with the largest number of score points is determined as the center line.
In some embodiments, each pixel point on the pixel line corresponds to a distance ratio, and determining the score point on the pixel line according to the distance ratio includes:
setting a threshold range according to the measurement precision, and judging whether the distance proportion is in the threshold range;
and if the distance proportion is in the threshold range, determining the pixel point on the pixel line corresponding to the distance proportion as a score point.
In some embodiments, obtaining the chip flash thickness from the centerline includes:
determining the thickness of the chip which is not covered by the overflow glue according to the central line;
and determining the thickness of the chip overflow glue according to the thickness of the chip which is not covered by the overflow glue and the actual thickness of the chip.
In some embodiments, determining the thickness of the chip not covered by the flash from the centerline includes:
determining the projection length of the thickness of the chip which is not covered by the glue overflow in the direction of the image pickup equipment according to the central line;
and determining the thickness of the chip which is not covered by the glue overflow according to the projection length.
In a second aspect, an embodiment of the present application provides an electronic device, including:
at least one processor, and at least one memory, wherein the memory stores a computer program that, when executed by the processor, causes the processor to perform the method of calculating the flash thickness of the chip of the first aspect.
The beneficial effects of this embodiment of the application are: different from the situation of the prior art, the embodiment of the application provides a method for calculating the flash thickness of a chip, which comprises the following steps: acquiring a chip glue overflow image; determining a contour map of the chip glue overflow image according to the chip glue overflow image; determining the center lines of the glue overflow and the mirror images of the glue overflow according to the profile; and determining the overflow thickness of the chip according to the central line. According to the method and the device, the profile of the chip glue overflow image is extracted, the center line of the glue overflow and the mirror image is determined, the thickness of the chip glue overflow is further obtained, the clear profile of the glue overflow and the clear profile of the glue overflow mirror image can be obtained, and the thickness of the glue overflow is accurately calculated.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which the figures of the drawings are not to scale, unless expressly stated otherwise.
FIG. 1 is a schematic diagram of an application environment provided by an embodiment of the present application;
fig. 2 is a schematic flow chart of a method for calculating a chip flash thickness according to an embodiment of the present application;
fig. 3 is a schematic diagram of a refinement flow of step S201 in fig. 2;
fig. 4 is a schematic diagram of a refinement flow of step S202 in fig. 2;
fig. 5 is an exemplary schematic diagram of an original binary image obtained from a chip flash image according to an embodiment of the present application;
fig. 6 is an exemplary schematic diagram of extracting a profile of a flash and a profile of a flash mirror image according to an embodiment of the present application;
fig. 7 is a schematic diagram of a refinement flow of step S203 in fig. 2;
fig. 8 is a schematic diagram of a refinement flow of step S233 in fig. 7;
fig. 9 is an exemplary schematic diagram of a pixel line traversing contour diagram according to an embodiment of the present application;
fig. 10 is a schematic diagram of a refinement flow of step S2306 in fig. 8;
fig. 11 is a schematic diagram of a refinement flow of step S2316 in fig. 10;
fig. 12 is a schematic diagram of a refinement flow of step S204 in fig. 2;
fig. 13 is a schematic diagram of a refinement flow of step S241 in fig. 12;
fig. 14 is an exemplary schematic diagram of calculating a flash thickness of a chip according to an embodiment of the present application;
fig. 15 is a schematic structural diagram of a device for calculating a chip flash thickness according to an embodiment of the present application;
Fig. 16 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Reference numerals illustrate:
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
It should be noted that, if not conflicting, the various features in the embodiments of the present application may be combined with each other, which is within the protection scope of the present application. In addition, the words "first", "second", and the like used in this application are not limited to data, but merely divide the same or similar items having substantially the same functions and actions.
The technical scheme of the application is specifically described below with reference to the accompanying drawings of the specification:
referring to fig. 1, fig. 1 is a schematic diagram of an application environment according to an embodiment of the present application;
As shown in fig. 1, the application environment 100 includes: the electronic device 10 is used for processing images shot by the image pickup device 20, the image pickup device 20 is used for shooting the side face of the chip 30 capable of reflecting the glue overflow mirror image, and the electronic device 10 is connected with the image pickup device 20 through a wireless network or a wired interface. It will be appreciated that the electronic device 10 includes a tablet computer, a computer terminal, and other devices capable of networking, the image capturing device 20 includes a camera, a video camera, and other devices capable of capturing images, the wired interface includes an interface such as USB, HDMI, fireWire, thunderbolt, and the wireless interface includes a wireless network such as bluetooth, a wireless local area network, and the like.
In the present embodiment, the electronic device 10 includes a tablet computer, a computer terminal, or the like, which is capable of networking. The image pickup apparatus 20 provides a wired interface or a wireless interface for the electronic apparatus 10 to acquire and recognize information of the image pickup apparatus by the electronic apparatus 10, thereby causing the electronic apparatus 10 to acquire an image of the image pickup apparatus.
Prior art known to the inventors of the present application will be briefly described before describing the solution of the present application, so that the following is convenient for understanding the solution of the present application.
Mirror image imaging principle: the image in the plane mirror is formed by the intersection of the extension lines of the reflected rays of light, and the image in the plane mirror is a broken line. The method is characterized in that the size of the object is equal to that of the virtual image, and the distance from the object to the mirror surface is equal to that from the virtual image to the mirror surface.
Contrast ratio: the ratio of black to white in an image is a measure of the different brightness levels between the brightest white and darkest black in the bright-dark areas of the image, and the gradation from black to white.
Referring to fig. 2, fig. 2 is a flow chart of a method for calculating a flash thickness of a chip according to an embodiment of the present application;
the method for calculating the chip glue overflow thickness is applied to electronic equipment, and specifically, an execution main body of the method for calculating the chip glue overflow thickness is one or at least two processors of the electronic equipment.
Wherein the chip comprises a chip side.
As shown in fig. 2, the method includes:
step S201: acquiring a chip glue overflow image;
in the embodiment of the application, an image pickup device is correspondingly arranged in a certain distance from the side surface of the chip, and the image pickup device is used for shooting the side surface of the chip. It can be understood that, due to the small size of the chip, when glue overflow occurs on the chip, the chip is difficult to directly observe visually, and the imaging device is usually required to assist in observation.
Specifically, the image capturing device arranged on the side face of the chip is used for capturing the side face of the chip, and an image of the chip glue overflow is obtained.
Referring to fig. 3 again, fig. 3 is a schematic diagram of a refinement flow of step S201 in fig. 2;
as shown in fig. 3, this step S201 includes:
step S211: acquiring a shooting angle;
in this application implementation, the side of chip is comparatively smooth, and when using the side of light source illumination chip, the chip side becomes the mirror surface, can reflect the glue overflow and form the glue overflow mirror image. It will be appreciated that the glue used to attach the chip is capable of reflecting the light source, and when the light source is used to illuminate the sides of the chip, different chips need to use light sources of different brightness in order to be able to clearly see the glue overflow on the sides of the chip.
In the embodiment of the application, according to the mirror image imaging principle, in the visual range that the imaging device has a certain angle with the vertical direction, the overflow glue and the image formed by the overflow glue mirrored through the side surface of the chip can be obtained.
In the embodiment of the application, the side surface of the chip is mainly shot from the direction of which the included angle between the image pickup device and the vertical direction is 45 degrees, and in the image shot and acquired in the direction of which the image pickup device and the vertical direction are 45 degrees, according to the mirror image imaging principle, when the direction is 45 degrees, the glue overflow mirror image and the glue overflow mirror image are in central symmetry relative to the side surface of the chip. When other angles are selected, such as 30 degrees and 60 degrees, the glue overflow mirror image and the glue overflow mirror image are not symmetrical with respect to the side surface of the chip, and at the moment, the glue overflow mirror image and the glue overflow mirror image are in a certain proportional relation with respect to the side surface of the chip.
Specifically, the side of the chip is photographed within a certain angle between the image pickup device and the vertical direction, and the angle is recorded, and the angle is the photographing angle of the image pickup device.
Step S212: acquiring a chip glue overflow image based on a shooting angle, wherein the chip glue overflow image comprises glue overflow and glue overflow mirror images;
specifically, a shooting angle of the image pickup device is obtained, the side surface of the chip generating the glue overflow is shot on the shooting angle, a chip glue overflow image is obtained, and the chip glue overflow image can observe the glue overflow and the glue overflow mirror image of the chip.
In the embodiment of the application, the shooting angle is acquired through the shooting equipment, the chip glue overflow image is acquired based on the shooting angle, and clear glue overflow and a glue overflow mirror image can be acquired.
Step S202: determining a contour map of the chip glue overflow image according to the chip glue overflow image;
specifically, a chip glue overflow image is obtained, the outline of the glue overflow and the outline of the glue overflow mirror image in the chip glue overflow image are extracted, and an outline image of the extracted chip glue overflow mirror image is obtained.
Referring to fig. 4 again, fig. 4 is a schematic diagram of a refinement flow of step S202 in fig. 2;
as shown in fig. 4, this step S202 includes:
step S221: the contrast of the chip glue overflow image is adjusted, and binarization processing is carried out on the chip glue overflow image to obtain an original binary image;
Specifically, according to the contrast of the chip flash image, the binarization processing is performed on the chip flash image, namely, the contrast of the chip flash image is improved, the flash and the flash mirror image are highlighted in the chip flash image, then the pixel points of the flash and the flash mirror image on the chip flash image are set to 255, the pixel point of the background on the chip flash image is set to 0, the flash and the flash mirror image on the chip flash image are made to be obviously white, the background on the chip flash image is made to be obviously black, the chip flash image is made to be obviously only black and white, the visual effect of the chip flash image is obtained, and the black and white images obtained after the binarization processing of the chip flash image are the original binary image.
In the embodiment of the application, the contrast of the chip glue overflow image is improved, so that the glue overflow in the chip glue overflow image and the glue overflow mirror image are highlighted, and the glue overflow of the binarized chip glue overflow image and the glue overflow mirror image and the background can show an obvious boundary.
In this embodiment of the present application, taking a chip glue overflow image obtained at a shooting angle of 45 ° as an example, an original binary image is obtained after binarizing the chip glue overflow image, and the obtained original binary image is exemplified as follows.
Referring to fig. 5 again, fig. 5 is an exemplary schematic diagram of an original binary image for obtaining a chip glue overflow image according to an embodiment of the present application;
as shown in fig. 5, the image is a certain area in an original binary image obtained by binarizing a chip glue overflow image, wherein an area a is a glue overflow mirror image after binarization, an area B is a glue overflow image after binarization, and an area C is a background of the chip glue overflow image after binarization, and the glue overflow mirror image are symmetrical with each other under the condition that the shooting angle is 45 degrees.
Step S222: performing background segmentation on the original binary image to obtain a target binary image, wherein the target binary image comprises a binary image of overflow glue and a binary image of overflow glue;
specifically, an original binary image is obtained after the binarization processing is carried out on the chip glue overflow image, the original binary image is subjected to background segmentation by using a local threshold method, namely, a black part in the original binary image is segmented, and the remaining white part is a target binary image, wherein the target binary image comprises a glue overflow binary image and a glue overflow mirror image binary image.
In the embodiment of the application, the background of the original binary image is segmented, so that the binarized chip glue overflow image is simplified, and the outline of the glue overflow mirror image are clearer.
Step S223: performing contour extraction on the overflow glue and the overflow glue mirror image in the target binary image to obtain a contour image of the chip overflow glue image;
specifically, a target binary image of a chip glue spilling image is obtained, a contour extraction method is adopted to extract the contour of glue spilling and the contour of a glue spilling mirror image in the target binary image, pixel points in the binary image of the glue spilling and pixel points in the binary image of the glue spilling are deleted, namely, the target pixel points in the binary image of the glue spilling are white, and 8 pixel points adjacent to the target pixel points are white, then the target pixel points are deleted, namely, the target pixel points are set to be black, so that the target pixel points have obvious black-white contrast with the contour of the glue spilling, every pixel of a removed boundary is traversed, the contour of the glue spilling is obtained, the processing method of the binary image of the glue spilling mirror image is the same as that of the binary image of the glue spilling, finally, the contour of the glue spilling and the contour of the glue spilling mirror image are obtained, and the contour of the glue spilling mirror image are combined into the contour image of the chip glue image. The profile of the obtained chip flash image is illustrated as follows.
Referring to fig. 6 again, fig. 6 is an exemplary schematic diagram of extracting a profile of a flash and a profile of a flash mirror image according to an embodiment of the present application;
As shown in fig. 6, the image is a part of the area in the outline image of the chip glue overflow image, wherein the white line of the area a is the outline of the glue overflow mirror image, the white line of the area B is the outline of the glue overflow image, and the outline of the glue overflow mirror image are symmetrical under the condition that the shooting angle is 45 degrees.
In the embodiment of the application, the binarization processing is performed on the chip glue overflow image to obtain an original binary image, the background in the original binary image is segmented to obtain a target binary image, and the contour extraction is performed on the binary image of the glue overflow in the target binary image and the binary image of the glue overflow image to obtain the contour of the chip glue overflow image.
Step S203: determining the center lines of the glue overflow and the mirror images of the glue overflow according to the profile;
in this embodiment of the present application, when the shooting angle is 45 °, the profile of the flash and the profile of the flash mirror image are symmetrical with respect to the center line. When the shooting angle is other angles, the outline of the overflow glue and the outline of the overflow glue mirror image are in proportional relation with each other about the central line.
In the embodiment of the present application, the position of the center line is determined mainly from an angle of 45 ° of the photographing angle.
Specifically, according to the profile map, a central line between the profile of the overflow glue and the profile of the overflow glue mirror image is determined, and the profile of the overflow glue mirror image are symmetrical about the central line.
Referring to fig. 7 again, fig. 7 is a schematic diagram of the refinement flow of step S203 in fig. 2;
as shown in fig. 7, this step S203 includes:
step S231: establishing a coordinate system based on the profile map, wherein the profile of the overflow glue and the profile of the overflow glue mirror image are both positioned in the coordinate system;
specifically, a contour map of a chip glue overflow image is obtained, a coordinate system x-y taking millimeter as a unit is established by taking the lower left corner of the contour map of the chip glue overflow image as an origin, the horizontal axis of a pixel coordinate system is x, the vertical axis of the pixel coordinate system is y, and the contour of the glue overflow mirror image are both in a first quadrant of the coordinate system.
Step S232: setting a pixel line at one end of the outline of the overflow glue, wherein the pixel line is parallel to the transverse axis of the coordinate system;
in the embodiment of the application, when the image capturing device captures the chip glue overflow image, the edge of the upper surface of the chip is horizontal in the image. It will be appreciated that the lines of pixels provided in the outline are parallel to the edges of the top surface of the chip.
Specifically, a pixel line is arranged at the edge of the outline of the glue overflow, the pixel line consists of a plurality of pixel points, and the pixel line is parallel to the transverse axis of the coordinate system.
Step S233: determining the center line of the glue overflow and the mirror image of the glue overflow based on the movement of the pixel line on a coordinate system;
specifically, the pixel line moves from the edge of the profile of the flash to the edge of the profile of the flash mirror image, and when the profile of the flash and the profile of the flash mirror image are symmetrical about the pixel line, the pixel line at the position is determined to be a central line, wherein the pixel line is always parallel to the transverse axis of the coordinate system in the moving process.
In the embodiment of the application, the coordinate system is established on the outline map of the chip glue overflow image, the pixel lines are arranged on the outline map, the center lines of the glue overflow and the mirror image of the glue overflow are further determined, the positions where the pixel lines move can be clearly known through the coordinate system, the center lines of the glue overflow and the mirror image of the glue overflow can be determined, and the boundary line between the glue overflow and the chip can be further and rapidly found.
Referring to fig. 8 again, fig. 8 is a schematic diagram of the refinement procedure of step S233 in fig. 7;
as shown in fig. 8, this step S233 includes:
step S2301: moving pixel lines from pixel to pixel in the direction from the outline of the overflow glue to the outline of the overflow glue mirror image in a coordinate system, so that the pixel lines traverse the outline map;
in the embodiment of the present application, it is assumed that a pixel line that is set at a section of the outline of the flash is a center line, and each time the pixel line moves by one step, it is determined whether the position where the pixel line is located at this time is an actual center line.
Specifically, the pixel line moves along the direction from the outline of the flash to the outline of the flash mirror image until the pixel line traverses the whole outline map, and then the movement of the pixel line is stopped.
Referring to fig. 9 again, fig. 9 is an exemplary schematic diagram of a pixel line traversing contour diagram according to an embodiment of the present application;
as shown in fig. 9, the image is a certain area in the outline of the chip glue overflow image, wherein the white line of the area a is the outline of the glue overflow mirror image, the white line of the area B is the outline of the glue overflow, a is the pixel line, and the pixel line moves from bottom to top until the whole outline is traversed.
Step S2302: acquiring the nearest point of each pixel point on the pixel line to the outline of the glue overflow, and marking the nearest point as a first outline point;
specifically, the position in the coordinate system where the pixel line is located is obtained, and the contour point with the closest distance between each pixel point on the pixel line and the contour of the glue overflow on the position is found, wherein the contour point with the closest distance between the pixel points is marked as a first contour point, and each first contour point corresponds to one pixel point.
Step S2303: acquiring the nearest point of each pixel point on the pixel line from the outline of the glue overflow mirror image, and marking the nearest point as a second outline point;
Specifically, the position in the coordinate system where the pixel line is located is obtained, the contour point with the nearest distance between each pixel point on the pixel line and the contour of the glue overflow mirror image on the position is found, the contour point with the nearest distance between the pixel points is marked as a second contour point, and each second contour point corresponds to one pixel point.
Step S2304: the distance between the first contour point and the pixel line is set to be a first distance, and the distance between the second contour point and the pixel line is set to be a second distance;
specifically, the coordinates of the first contour point, the coordinates of the second contour point and the vertical axis position where the pixel line is located are obtained, the ordinate of the first contour point and the ordinate of the second contour point are the same, the distance between the first contour point and the pixel line is calculated to obtain a first distance, and the distance between the second contour point and the pixel line is calculated to obtain a second distance.
Step S2305: calculating the distance ratio of the first distance to the second distance;
specifically, a first distance is calculated by calculating the distance between the first contour point and the pixel line, a second distance is calculated by calculating the distance between the second contour point and the pixel line, a distance ratio is further calculated by further calculating the ratio of the first distance to the second distance, and the first contour point, the second contour point and the pixel point on the pixel line corresponding to the distance ratio are all located on the same vertical line.
Step S2306: determining the center line of the spilled glue and the spilled glue mirror image according to the distance proportion;
specifically, the distance proportion corresponding to the pixel points on each pixel line is calculated, and the center line of the glue overflow and the mirror image of the glue overflow is further determined according to the distance proportion.
In the embodiment of the application, the first distance is obtained by obtaining the distance between the outline point of the overflow glue and the pixel line, the first distance is obtained by obtaining the distance between the outline point of the overflow glue mirror image and the pixel line, the distance proportion is obtained by calculating the ratio of the first distance to the second distance, and the position of the central line is determined according to the distance proportion.
Referring to fig. 10 again, fig. 10 is a schematic diagram of the refinement procedure of step S2306 in fig. 8;
as shown in fig. 10, this step S2306 includes:
step S2316: determining the score points on the pixel lines according to the distance proportion so as to determine the number of the score points on the same pixel line;
specifically, the distance proportion corresponding to the pixel points on each pixel line is calculated, whether the pixel points corresponding to the distance proportion are the score points is determined according to the distance proportion, if yes, the pixel points are marked as the score points and the pixel lines corresponding to the pixel points, after all the pixel points corresponding to the distance proportion are judged, the number of the marked pixel points on each marked pixel line is counted, and the total score points of each marked pixel line, namely the number of the score points on each pixel line, are obtained.
Step S2326: determining the number of the score points of each pixel line, and determining the pixel line with the largest number of the score points as a central line;
specifically, the number of the score points of each pixel line is determined, the number of the total score points of each pixel line is compared, the pixel line with the largest total score point number is determined as a central line, and the position of the ordinate where the central line is located is recorded.
Referring to fig. 11 again, fig. 11 is a schematic diagram of the refinement procedure of step S2316 in fig. 10;
as shown in fig. 11, this step S2316 includes:
step S2361: determining a score point on the pixel line according to the distance proportion;
specifically, a distance ratio corresponding to the pixel point on each pixel line is calculated, whether the pixel point corresponding to the distance ratio is a score point is determined according to the distance ratio, and if yes, the pixel point is marked as the score point and the pixel line corresponding to the pixel point.
Step S2362: whether the distance ratio is within a threshold range;
in the embodiment of the present application, taking an example when the shooting angle is 45 °, the distance ratio of the pixel points is calculated, and the center line is determined according to the distance ratio.
In this embodiment of the present application, when the shooting angle is 45 °, the profile of the flash and the profile of the flash mirror image are symmetrical with respect to the center line. It can be understood that in an ideal state, the distance ratio corresponding to each pixel point on the central line is 1, and when the shooting angle is other angles, for example, 30 degrees and 60 degrees, the distance ratio corresponding to each pixel point on the central line is respectively 0.5 and 2.0 in an ideal state. In a real state, errors always exist in measuring the distance between the first contour point and the pixel line and the distance between the second contour point and the pixel line, errors also exist in calculating the determined distance proportion, but the distance proportion corresponding to the pixel point on the central line always approaches to 1.
In the embodiment of the present application, when the photographing angle is 45 °, in the case where there is an error, the threshold value range is set to 0.8-1.2 according to the measurement accuracy.
Specifically, the distance ratio of the pixel points on each pixel line is determined, whether the distance ratio corresponding to each pixel point is within the threshold range is determined one by one, if yes, the step is skipped to step S2363, and if not, the step is skipped to step S2364.
Step S2363: determining pixel points on the pixel lines corresponding to the distance proportions as score points;
specifically, if the distance ratio is within the threshold range, determining the pixel point corresponding to the distance ratio as a score point, and marking the pixel line corresponding to the pixel point.
Step S2364: determining that the pixel points on the pixel lines corresponding to the distance proportion are not score points;
specifically, if the distance ratio is not within the threshold range, the pixel point corresponding to the distance ratio is not the score point.
In the embodiment of the application, the distance ratio is obtained by calculating the ratio of the first distance to the second distance, then the score points on the pixel lines are determined according to the distance ratio, and the pixel line with the largest number of score points is further determined as the central line.
Step S204: determining the overflow thickness of the chip according to the central line;
in this embodiment of the present application, the center line of the determined flash and the flash mirror image is the boundary line between the flash and the side of the chip.
Specifically, according to the central line, determining the boundary line between the glue overflow and the side surface of the chip, and then determining the thickness of the glue overflow of the chip according to the boundary line.
Referring to fig. 12 again, fig. 12 is a schematic diagram of a refinement flow of step S204 in fig. 2;
as shown in fig. 12, this step S204 includes:
step S241: determining the thickness of the chip which is not covered by the overflow glue according to the central line;
specifically, according to the central line, determining the boundary line between the flash and the side surface of the chip, obtaining the shooting angle of the image pickup device and the projection length of the thickness of the chip which is not covered by the flash in the direction of the image pickup device, and according to the shooting angle and the projection length, calculating the thickness of the chip which is not covered by the flash.
Referring to fig. 13 again, fig. 13 is a schematic diagram of the refinement flow of step S241 in fig. 12;
as shown in fig. 13, this step S241 includes:
step S2411: determining the projection length of the thickness of the chip which is not covered by the glue overflow in the direction of the image pickup equipment according to the central line;
in the embodiment of the application, the image pickup device can acquire the proportion of the projection length of the thickness of the chip, which is not covered by the flash, on the image of the chip flash on the image in the vertical direction of the image.
Specifically, the center line is determined, that is, the boundary line between the chip and the flash is determined, the shooting angle of the image capturing device is known, the size of the proportion of the projection length of the thickness of the chip, which is not covered by the flash, in the vertical direction of the image of the chip flash on the image of the chip flash is known, the position of the chip is fixed, the position information of the image capturing device is known, and the projection length of the thickness of the chip, which is not covered by the flash, in the direction of the image capturing device can be obtained according to the imaging principle of the image capturing device, the characteristics of the similar triangle and the known conditions by using the position information of the image capturing device and the shooting angle, such as: the projection length of the thickness of the chip, which is not covered by the flash, in the image of the chip flash in the vertical direction of the image of the chip flash can be measured through an OpenCV library of the image pickup device.
Step S2412: determining the thickness of the chip which is not covered by the glue overflow according to the projection length;
specifically, according to the center line, determining the boundary line between the flash and the side surface of the chip, and obtaining the projection length of the thickness of the chip which is not covered by the flash in the direction of the image pickup device and the shooting angle (theta) of the image pickup device, wherein the projection length is divided by sin theta to obtain the thickness of the chip which is not covered by the flash.
Step S242: determining the thickness of the chip overflow glue according to the thickness of the chip which is not covered by the overflow glue and the actual thickness of the chip;
specifically, the thickness of the chip which is not covered by the flash and the actual thickness of the chip are obtained, and the thickness of the chip which is not covered by the flash is subtracted from the actual thickness of the chip to obtain the thickness of the flash of the chip. The specific method for calculating the flash thickness of the chip is as follows.
Referring to fig. 14 again, fig. 14 is a schematic diagram illustrating an example of calculating a thickness of a flash of a chip according to an embodiment of the present application;
as shown in fig. 14, the image is a side structure diagram of a chip flash image when the shooting angle is 45 °, the X area is the chip side flash, the Y area is the flash reflected on the chip side to form a flash mirror image when the shooting angle is 45 °, the flash and the flash mirror image are symmetrical about the center line, the Z area is the other side of the chip, h is the actual thickness of the chip, X is the thickness of the chip not covered by the flash, θ is the shooting angle of the image pickup device, h1 is the projection length of the thickness of the chip not covered by the flash in the direction of the image pickup device, and the position indicated by the arrow is the position of the boundary line when the shooting angle is θ. Knowing h1 and h, θ is 45 degrees, x is calculated, and according to the geometric relationship of triangles, x=h1/sin 45 degrees can be obtained, and the thickness of the chip overflow glue=h-h 1/sin45 degrees.
In this embodiment of the present application, when the shooting angle is other angles, the center line of the flash and the chip is found by using the method for locating the center line, and then the thickness of the flash of the chip is obtained by using a formula, which is not illustrated here.
In the embodiment of the application, the outline of the chip glue overflow image is determined according to the chip glue overflow image by acquiring the chip glue overflow image, the center line of the glue overflow and the mirror image of the glue overflow is determined according to the outline, and the thickness of the glue overflow of the chip is determined according to the center line. The method solves the problem that the overflow glue thickness of the chip is inaccurate in the prior art, a clear overflow glue image of the chip is not required to be acquired, a contour map of the clear overflow glue image of the chip can be acquired, the boundary line between the overflow glue and the chip is accurately positioned according to the contour map, and the overflow glue thickness of the chip is further acquired.
Referring to fig. 15, fig. 15 is a schematic structural diagram of a device for calculating a thickness of a flash of a chip according to an embodiment of the present application;
as shown in fig. 15, the device 150 for calculating the flash thickness of the chip includes:
an image acquiring unit 151, configured to acquire a chip glue overflow image;
a contour map determining unit 152, configured to determine a contour map of the chip glue overflow image according to the chip glue overflow image;
A center line determining unit 153, configured to determine a center line of the flash and the flash mirror image according to the profile;
and a chip overflow glue thickness determining unit 154, configured to determine the chip overflow glue thickness according to the center line.
In this embodiment of the present application, the calculating device for the chip flash thickness may be a software module, where the software module includes a plurality of instructions, and the instructions are stored in a memory, and the processor may access the memory and call the instructions to execute the instructions to complete the calculating method for the chip flash thickness in each embodiment.
In this embodiment of the present application, the device for calculating the thickness of the flash on the chip may also be built by a hardware device, for example, the device for calculating the thickness of the flash on the chip may be built by one or more than two chips, and each chip may work in coordination with each other to complete the method for calculating the thickness of the flash on the chip described in each embodiment above. As another example, the chip flash thickness calculation device may also be built from various types of logic devices, such as general purpose processors, digital Signal Processors (DSPs), application Specific Integrated Circuits (ASICs), field Programmable Gate Arrays (FPGAs), single-chip microprocessors, ARM (Acorn RISC Machine) or other programmable logic devices, discrete gate or transistor logic, discrete hardware components, or any combinations of these components.
The device for calculating the thickness of the chip overflow in the embodiment of the application can be a device, and also can be a component, an integrated circuit or a chip in a terminal. The device may be a mobile electronic device or a non-mobile electronic device. By way of example, the mobile electronic device may be a cell phone, tablet computer, notebook computer, palm computer, vehicle-mounted electronic device, wearable device, ultra-mobile personal computer (ultra-mobile personal computer, UMPC), netbook or personal digital assistant (personal digital assistant, PDA), etc., and the non-mobile electronic device may be a server, network attached storage (Network Attached Storage, NAS), personal computer (personal computer, PC), television (TV), teller machine or self-service machine, etc., and the embodiments of the present application are not limited in particular.
The computing device for the chip flash thickness in the embodiment of the present application may be a device with an operating system. The operating system may be an Android operating system, an ios operating system, or other possible operating systems, which are not specifically limited in the embodiments of the present application.
The device for calculating the thickness of the chip overflow glue provided in the embodiment of the present application can implement each process implemented by the method embodiment of fig. 2, and in order to avoid repetition, a detailed description is omitted here.
It should be noted that, the device can execute the method for calculating the chip glue overflow thickness provided by the embodiment of the application, and has the corresponding functional modules and beneficial effects of the execution method. Technical details which are not described in detail in the device embodiments can be seen in the method for calculating the flash thickness of the chip provided in the embodiments of the present application.
In an embodiment of the application, a device for calculating a chip glue overflow thickness is provided, which includes an image acquisition unit for acquiring a chip glue overflow image; the outline map determining unit is used for determining an outline map of the chip glue overflow image according to the chip glue overflow image; the central line determining unit is used for determining the central lines of the glue overflow and the glue overflow mirror image according to the profile; and the chip glue overflow thickness determining unit is used for determining the chip glue overflow thickness according to the central line.
According to the method and the device, the outline of the chip glue overflow image is obtained, the boundary line between the glue overflow and the chip is accurately positioned, and the thickness of the chip glue overflow can be accurately obtained.
Referring to fig. 16 again, fig. 16 is a schematic structural diagram of an electronic device according to an embodiment of the present disclosure;
as shown in fig. 16, the electronic device 10 includes one or more processors 101 and a memory 102. In fig. 16, a processor 101 is taken as an example.
The processor 101 and the memory 102 may be connected by a bus or otherwise, for example in fig. 16.
The processor is configured to execute the method for calculating the flash thickness of the chip according to any embodiment of the present application, where the method includes:
and acquiring a chip glue overflow image, determining a contour map of the chip glue overflow image according to the chip glue overflow image, determining the central lines of glue overflow and glue overflow mirror images according to the contour map, and determining the thickness of the chip glue overflow according to the central lines.
By acquiring the outline of the chip glue overflow image, the boundary line between the glue overflow and the chip is accurately positioned, and the thickness of the chip glue overflow can be accurately acquired.
The memory 102 is used as a non-volatile computer readable storage medium, and can be used to store non-volatile software programs, non-volatile computer executable programs, and modules, such as program instructions/modules corresponding to the method for calculating the flash thickness of the chip in the embodiment of the present invention. The processor 101 executes various functional applications and data processing of the electronic device by running nonvolatile software programs, instructions and modules stored in the memory 102, that is, implements the method for calculating the flash thickness of the chip according to the above method embodiment.
The memory 102 may include high-speed random access memory and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid state storage device. In some embodiments, memory 102 may optionally include memory located remotely from processor 101. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
One or more modules are stored in memory 102 that, when executed by one or more processors 101, perform the method of calculating the flash thickness of a chip in any of the method embodiments described above, for example, performing the various steps shown in fig. 2 described above.
The present application also provides a computer program product, which includes one or more program codes stored in a non-volatile computer readable storage medium, and a processor of an electronic device reads the program codes from the non-volatile computer readable storage medium, and the processor executes the program codes to complete the steps of the method for calculating the flash thickness of the chip provided in the above embodiments.
Those of ordinary skill in the art will appreciate from the foregoing description of the embodiments that all or a portion of the steps of implementing the embodiments may be implemented by hardware, or may be implemented by program code related hardware, where the program may be stored in a non-volatile computer readable storage medium, where the non-volatile computer readable storage medium may be a read only memory, a magnetic disk, or an optical disk.
From the above description of embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus a general purpose hardware platform, or may be implemented by hardware. Those skilled in the art will appreciate that all or part of the processes implementing the methods of the above embodiments may be implemented by a computer program for instructing relevant hardware, and the program may be stored in a non-volatile computer readable storage medium, and the program may include processes of the embodiments of the methods as above when executed. The non-volatile computer readable storage medium may be a magnetic disk, an optical disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), or the like.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; the technical features of the above embodiments or in the different embodiments may also be combined under the idea of the present application, the steps may be implemented in any order, and there are many other variations of the different aspects of the present application as described above, which are not provided in details for the sake of brevity; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims (10)

1. The method for calculating the flash thickness of the chip is characterized by comprising the following steps of:
acquiring a chip glue overflow image;
determining a contour map of the chip glue overflow image according to the chip glue overflow image;
determining the center lines of the glue overflow and the glue overflow mirror image according to the profile diagram;
and determining the thickness of the chip glue overflow according to the central line.
2. The method of claim 1, wherein the chip includes a chip side operable to reflect glue flash to form a glue flash image;
the obtaining the chip glue overflow image comprises the following steps:
acquiring a shooting angle;
and acquiring the chip glue overflow image based on the shooting angle, wherein the chip glue overflow image comprises glue overflow and glue overflow mirror images.
3. The method according to claim 1 or 2, wherein determining a profile of the chip flash image from the chip flash image comprises:
adjusting the contrast of the chip glue overflow image, and performing binarization processing on the chip glue overflow image to obtain an original binary image;
performing background segmentation on the original binary image to obtain a target binary image, wherein the target binary image comprises a binary image of the glue overflow and a binary image of the glue overflow mirror image;
And carrying out contour extraction on the glue overflow and the glue overflow mirror image in the target binary image to obtain a contour image of the chip glue overflow image.
4. The method according to claim 1 or 2, wherein the profile map includes a profile of the flash and a profile of the flash image, and the determining a centerline of the flash and the flash image according to the profile map includes:
establishing a coordinate system based on the profile map, wherein the profile of the glue overflow and the profile of the mirror image of the glue overflow are both positioned in the coordinate system;
setting a pixel line at one end of the outline of the glue overflow, wherein the pixel line is parallel to the transverse axis of a coordinate system;
and determining the center line of the glue overflow mirror image based on the movement of the pixel line on the coordinate system.
5. The method of claim 4, wherein the determining a centerline of the flash that mirrors the flash based on the movement of the pixel line on the coordinate system comprises:
moving the pixel lines pixel by pixel in the direction from the outline of the overflow glue to the outline of the overflow glue mirror image in the coordinate system, so that the pixel lines traverse the outline map;
acquiring the nearest point of each pixel point on the pixel line to the outline of the glue overflow, and marking the nearest point as a first outline point;
Acquiring the nearest point of each pixel point on the pixel line to the outline of the glue overflow mirror image, and marking the nearest point as a second outline point;
the distance between the first contour point and the pixel line is set to be a first distance, and the distance between the second contour point and the pixel line is set to be a second distance;
calculating a distance ratio of the first distance to the second distance;
and determining the center line of the glue overflow and the mirror image of the glue overflow according to the distance proportion.
6. The method of claim 5, wherein determining the centerline of the flash to flash image based on the distance ratio comprises:
determining the score points on the pixel lines according to the distance proportion so as to determine the number of the score points on the same pixel line;
the number of score points for each pixel line is determined, and the pixel line with the largest number of score points is determined as the center line.
7. The method of claim 6, wherein each pixel point on the pixel line corresponds to a distance scale, and wherein determining the score point on the pixel line based on the distance scale comprises:
setting a threshold range according to the measurement precision, and judging whether the distance proportion is in the threshold range;
And if the distance proportion is in the threshold range, determining the pixel points on the pixel line corresponding to the distance proportion as the score points.
8. The method of any of claims 1, 2, 5-7, wherein obtaining a chip flash thickness from the centerline comprises:
determining the thickness of the chip which is not covered by the overflow glue according to the central line;
and determining the thickness of the chip glue overflow according to the thickness of the chip which is not covered by the glue overflow and the actual thickness of the chip.
9. The method of claim 8, wherein determining the thickness of the chip not covered by the flash based on the centerline comprises:
determining the projection length of the thickness of the chip which is not covered by the glue overflow in the direction of the image pickup equipment according to the central line;
and determining the thickness of the chip which is not covered by the glue overflow according to the projection length.
10. An electronic device, comprising: at least one processor, and at least one memory, wherein the memory stores a computer program that, when executed by the processor, causes the processor to perform the steps of the method of any of claims 1-9.
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