CN116479408A - Coating equipment - Google Patents
Coating equipment Download PDFInfo
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- CN116479408A CN116479408A CN202310240225.3A CN202310240225A CN116479408A CN 116479408 A CN116479408 A CN 116479408A CN 202310240225 A CN202310240225 A CN 202310240225A CN 116479408 A CN116479408 A CN 116479408A
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- coating
- inner cylinder
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- substrate
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- 238000000576 coating method Methods 0.000 title claims abstract description 90
- 239000011248 coating agent Substances 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 40
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 33
- 238000007747 plating Methods 0.000 claims abstract description 29
- 238000000605 extraction Methods 0.000 claims description 21
- 238000012544 monitoring process Methods 0.000 claims description 19
- 239000002243 precursor Substances 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 18
- 238000004891 communication Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 5
- 230000000712 assembly Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 20
- 230000008569 process Effects 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 241001522301 Apogonichthyoides nigripinnis Species 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to a coating equipment. Comprising the following steps: the magnetron sputtering device comprises an outer shell, an inner cylinder, an atomic layer deposition assembly and a magnetron sputtering assembly, wherein a first opening and a second opening are formed in the circumferential side wall of the outer shell; the inner cylinder body is connected to the inside of the outer shell, a working cavity is formed by the circumferential outer wall of the inner cylinder body and the inner wall of the outer shell, and in a working state, the working cavity is in a vacuum state and is used for accommodating a substrate; the atomic layer deposition assembly is disposed on the outer shell. When the common plane substrate material is plated, the magnetron sputtering component can be selected to carry out magnetron coating, and the coating speed is high; when a substrate with a larger curvature radius or a product with a higher requirement on the quality of a film layer is plated, a film plating process of an atomic layer deposition mode or a film plating process combining atomic layer deposition and magnetic control can be selected, so that various film plating requirements can be met, and the production efficiency is improved.
Description
Technical Field
The application relates to the technical field of coating machines, in particular to coating equipment.
Background
With the development of automatic processing technology, a film plating machine technology is developed. The existing coating machine mainly comprises the following types: PVD (Physical Vapor Deposition ) equipment mainly comprises a magnetron sputtering coating machine, an ion sputtering coating machine and an electron gun evaporation coating machine. There are also conventional CVD (Chemical Vapor Deposition ) coaters and a special class of CVD-ALD (Atomic Layer Deposition ) coaters.
In the related art, ALD can meet the coating requirements of a coating substrate with a complex shape, and the quality of a coated film is far higher than that of other types of coating equipment, but has the obvious defect that the coating speed is far lower than that of PVD coating equipment and a conventional CVD coating machine.
Disclosure of Invention
Based on this, it is necessary to provide a coating apparatus capable of improving the coating effect and coating efficiency in view of the low rate in the existing ALD coating process.
The technical scheme is as follows: a coating apparatus, the coating apparatus comprising: the outer shell is provided with a first opening and a second opening on the circumferential side wall; the inner cylinder body is connected to the inside of the outer shell, a working cavity is formed by the circumferential outer wall of the inner cylinder body and the inner wall of the outer shell, and in a working state, the working cavity is in a vacuum state and is used for accommodating a substrate; the atomic layer deposition assembly is arranged on the shell body and communicated with the working cavity through the first opening, and is used for coating a substrate; and the magnetron sputtering assembly is arranged on the outer shell, and is communicated with the working cavity through the second opening, and is used for coating the substrate.
According to the coating equipment, in the working process, the substrate to be coated is placed in the working cavity, and the atomic layer deposition assembly and the magnetron sputtering assembly on the outer wall of the outer shell can respectively carry out a coating processing process on the substrate in the working cavity through the first opening and the second opening. Because of the existence of the inner cylinder body, the middle area of the inner cylinder body is not required to be kept in vacuum and is in a normal pressure state, so that the actual volume of the working cavity is reduced, the usage amount of the precursor in the coating process is greatly reduced, the production cost is reduced, the energy consumption of the pump body and the heating is effectively reduced, and the economic benefit is improved. In addition, when the common plane substrate material is plated, the magnetron sputtering component can be selected to carry out magnetron coating, so that the coating speed is high; when a substrate with a larger curvature radius or a product with a higher requirement on the quality of a film layer is plated, a film plating process of an atomic layer deposition mode or a film plating process combining atomic layer deposition and magnetic control can be selected, so that various film plating requirements can be met, and the production efficiency is improved.
In one embodiment, the coating apparatus further includes a transporting member, the transporting member is located in the working chamber, and the transporting member is capable of moving in the working chamber, and the transporting member is used for carrying the substrate to move in the working chamber.
In one embodiment, the inner cylinder is detachably connected with the bottom wall of the outer housing, and after the inner cylinder is detached, the inner part of the outer housing is in a vacuum state.
In one embodiment, the atomic layer deposition assembly includes a precursor supply and an anode layer ion source, the precursor supply being coupled to the anode layer ion source, the precursor supply being for processing of a substrate precursor.
In one embodiment, the number of the magnetron sputtering components is at least two, the number of the second openings is at least two, the two second openings are arranged on the outer shell at intervals, and each magnetron sputtering component is communicated with the working cavity through each second opening.
In one embodiment, the magnetron sputtering assembly comprises a mounting piece and a target, wherein the mounting piece is provided with a mounting cavity, and the mounting cavity is communicated with the working cavity through the second opening.
In one embodiment, the number of targets is more than two, and more than two targets are arranged in the mounting cavity at intervals.
In one embodiment, the coating device further comprises an optical monitoring module, wherein the optical monitoring module is mounted on the outer shell and/or the inner cylinder, and is communicated with the working cavity, and the optical monitoring module is used for monitoring the thickness of the coating.
In one embodiment, the coating device further comprises a cover plate assembly, the cover plate assembly can be connected to the outer shell in an openable and closable mode, in an opened state, the cover plate assembly is in sealing fit with the cavity opening of the working cavity, and in a closed state, the cover plate assembly is in sealing fit with the cavity opening of the working cavity.
In one embodiment, the coating equipment further comprises an air extraction pipeline, the air extraction pipeline is arranged in the inner cavity of the inner cylinder body, an air extraction opening is formed in the inner cavity of the inner cylinder body, and the air extraction pipeline is communicated with the working cavity through the air extraction opening.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application, illustrate and explain the application and are not to be construed as limiting the application.
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of the overall structure of a plating apparatus according to an embodiment.
Fig. 2 is a schematic diagram showing an internal structure of a plating apparatus according to an embodiment.
FIG. 3 is a schematic view showing another state of the plating apparatus according to the embodiment.
Reference numerals illustrate:
100. coating equipment; 110. an outer housing; 111. a working chamber; 120. an inner cylinder; 130. an atomic layer deposition assembly; 131. a precursor supply; 132. an anode layer ion source; 140. a magnetron sputtering assembly; 141. a target material; 142. a mounting member; 150. an optical monitoring module; 160. an air extraction pipeline; 170. a frame; 171. a gas supply chamber; 172. a moving wheel; 180. a cover plate assembly; 181. a cover plate body; 182. a driving member; 200. a substrate.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that, if there are terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., these terms refer to the orientation or positional relationship based on the drawings, which are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or element referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the terms "plurality" and "a plurality" if any, mean at least two, such as two, three, etc., unless specifically defined otherwise.
In this application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, the meaning of a first feature being "on" or "off" a second feature, and the like, is that the first and second features are either in direct contact or in indirect contact through an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that if an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. If an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein, if any, are for descriptive purposes only and do not represent a unique embodiment.
Atomic layer deposition (atomiclayer deposition, ALD), also known as atomic layer epitaxy (atomiclayer epitaxy, ALE), is a chemical vapor deposition technique based on an ordered, surface self-saturation reaction. The atomic layer deposition technique is a method of forming a thin film by alternately pulsing a vapor precursor into a reaction chamber and performing a vapor-solid phase chemisorption reaction on the surface of a deposition substrate. The atomic layer deposition process is performed in four primitive steps by A, B two half reactions: 1) Pulse adsorption reaction of the precursor A; 2) Purging excess reactants and byproducts with inert gas; 3) Pulse adsorption reaction of the precursor B; 4) The inert gas sweeps the redundant reactants and byproducts, and then circulates in turn, so that the film grows layer by layer on the surface of the substrate. In the prior art, ALD (atomic layer deposition) coating equipment has special advantages, can meet the coating requirements of coating substrates with complex shapes, and has the quality of a coated film far higher than that of other types of coating equipment, however, the coating speed of the traditional ALD coating equipment is lower than that of PVD (physical vapor deposition) coating equipment and a conventional CVD (chemical vapor deposition) coating machine in the working process.
Referring to fig. 1, 2 and 3, fig. 1 is a schematic diagram illustrating an overall structure of a coating apparatus 100 according to an embodiment of the present application. Fig. 2 shows a schematic internal structure of the plating apparatus 100 according to an embodiment of the present application. Fig. 3 is a schematic view showing a structure of another state of the plating apparatus 100 according to an embodiment of the present application. The embodiment of the present application provides a coating apparatus 100, the coating apparatus 100 includes: an outer housing 110, an inner cylinder 120, an atomic layer deposition assembly 130, and a magnetron sputtering assembly 140. The circumferential side wall of the outer shell 110 is provided with a first opening and a second opening, and the inner cylinder 120 is connected to the inside of the outer shell 110. The working chamber 111 is defined by the circumferential outer wall of the inner cylinder 120 and the inner wall of the outer housing 110, and in the working state, the working chamber 111 is in a vacuum state, and the working chamber 111 is used for accommodating the substrate 200. The atomic layer deposition assembly 130 is disposed on the outer housing 110, and the atomic layer deposition assembly 130 is in communication with the working chamber 111 through the first opening, and the atomic layer deposition assembly 130 is used for coating the substrate 200. The magnetron sputtering assembly 140 is disposed on the outer housing 110, and the magnetron sputtering assembly 140 is in communication with the working chamber 111 through the second opening, and the magnetron sputtering assembly 140 is used for coating the substrate 200.
In the above-mentioned coating apparatus 100, during operation, the substrate 200 to be coated is placed in the working chamber 111, and the atomic layer deposition assembly 130 and the magnetron sputtering assembly 140 on the outer wall of the outer housing 110 can perform a coating processing process on the substrate 200 in the working chamber 111 through the first opening and the second opening, respectively. Because of the existence of the inner cylinder 120, the middle area of the inner cylinder 120 is not required to be kept in vacuum and is in a normal pressure state, so that the actual volume of the working cavity 111 is reduced, the usage amount of the precursor in the coating process is greatly reduced, the production cost is reduced, the energy consumption of a pump body and heating is effectively reduced, and the economic benefit is improved. In addition, when the material of the common plane substrate 200 is plated, the magnetron sputtering component 140 can be selected for magnetron coating, so that the coating speed is high; when the substrate 200 with larger curvature radius or a product with higher requirement on film quality is plated, a film plating process of an atomic layer deposition mode or a film plating process combining atomic layer deposition and magnetic control can be selected, so that various film plating requirements can be met, and the production efficiency is improved.
Alternatively, the inner cylinder 120 and the inner wall of the outer housing 110 may be fixedly connected or detachably connected.
In one embodiment, referring to fig. 1 and 3, the inner cylinder 120 is detachably connected to the bottom wall of the outer housing 110, and after the inner cylinder 120 is detached, the inside of the outer housing 110 is in a vacuum state. For example, the inner cylinder 120 and the outer housing 110 are detachably connected to the bottom wall of the outer housing 110 by means of a snap-fit, a plug-in, a pin-in, a screw connection, a bolt connection, a magnetic connection, or the like. Thus, the coating apparatus 100 has two modes of operation: when the inner cylinder 120 is installed inside the outer casing 110, the normal operation of the two coating modes of the above technical scheme can be realized, and the volume of the vacuum working chamber 111 is reduced. When the inner cylinder 120 is taken out from the inner wall of the outer housing 110, the normal ALD coating process can be performed on the substrate 200 to form a conventional ALD apparatus, or to form a conventional magnetron sputtering coating apparatus 100 to perform magnetron sputtering coating, thereby realizing one machine for two purposes.
Further, the plating apparatus 100 further includes a transport member (not shown) disposed in the working chamber 111 and movable in the working chamber 111, the transport member being for carrying the substrate 200 for movement in the working chamber 111. Therefore, the substrate 200 is placed on the transport member, and the substrate 200 is moved in the working chamber 111 during the production process, so that the different magnetron sputtering assemblies 140 and the atomic layer deposition assemblies 130 are experienced, frequent replacement is not needed, the time of the atomic layer deposition process is shortened, and the coating efficiency is improved.
Alternatively, the transportation member may be mounted in the working chamber 111 in such a manner that the transportation member is disposed on the bottom wall of the working chamber 111, and the inner cylinder 120 is disposed adjacent to or spaced apart from the transportation member. For example, the transport member is a conveyor belt having jigs, and each substrate 200 is disposed on a corresponding jig. Or the transport member is mounted on the inner cylinder 120 and moves on the circumferential outer wall of the inner cylinder 120, thereby driving the substrate 200 to move. It is also possible that the transport member is provided on the inner wall of the outer case 110 to move on the circumferential inner wall of the outer case 110, thereby moving the substrate 200.
Further, the outer wall of the annular working chamber 111 and the inner wall space of the working chamber 111 may be divided into different areas; meets the requirements of different stages in the coating process. Specifically, the working chambers 111 may include a precursor region, a nitrogen gas cleaning region, a moisture region, and a Plasma (Plasma processing) region, respectively. The transport member carries the substrate 200 through different regions during the transport process in the working chamber 111, thereby completing the whole atomic layer deposition process.
In one embodiment, referring to fig. 1, the atomic layer deposition assembly 130 includes a precursor supply 131 and an anode layer ion source 132, the precursor supply 131 being coupled to the anode layer ion source 132, the precursor supply 131 being configured for processing a precursor of the substrate 200. As such, the ALD assembly 130 with the anode layer ion source 132 is suitable for a wide variety of coating materials, and is advantageous for satisfying different quality coating requirements of the coating apparatus 100.
In one embodiment, referring to fig. 1 and 2, there are at least two magnetron sputtering assemblies 140, at least two second openings, two second openings are disposed on the outer housing 110 at intervals, and each magnetron sputtering assembly 140 is in communication with the working chamber 111 through each second opening. For example, in fig. 1, the magnetron sputtering assembly 140 is two. Thus, the two magnetron sputtering assemblies 140 can sequentially complete the coating operation, which is beneficial to further improving the coating speed.
In one embodiment, referring to fig. 1 and 2, the magnetron sputtering assembly 140 includes a mounting member 142 and a target 141, the mounting member 142 is provided with a mounting cavity, and the mounting cavity is communicated with the working cavity 111 through a second opening. Thus, the overall structural stability of the coating device is improved.
In one embodiment, referring to fig. 1 and 2, the number of targets 141 is more than two, and more than two targets 141 are disposed at intervals in the mounting cavity. For example, referring to fig. 2, the number of targets 141 is two. Thus, the two targets 141 work, which is advantageous to increase the coating area and the coating rate, thereby being advantageous to increase the productivity.
Alternatively, the shape of the target 141 may be a planar target 141, a cylindrical target 141, a strip target 141, a cylindrical planar target 141, or other target 141 types.
In one embodiment, referring to fig. 2, the target 141 is a cylindrical target 141. The target 141 is rotatably connected to the inner wall of the installation cavity. In particular in fig. 2, the target 141 is a cylindrical target 141. Thus, the coating has good uniformity, and when the bulls-eye rotates, the surface of the target 141 can be uniformly sputtered layer by layer, no pits exist, and the utilization rate of the target 141 is improved. The present embodiment provides only a material selection of the target 141, but is not limited thereto.
In one embodiment, referring to fig. 1 and 3, the plating apparatus 100 further includes an optical monitoring module 150, where the optical monitoring module 150 is mounted on the outer housing 110 and/or the inner cylinder 120, and the optical monitoring module 150 is in communication with the working chamber 111, and the optical monitoring module 150 is used for monitoring the thickness of the plating film. Therefore, the optical monitoring module 150 can monitor the thickness of the plating film during the plating process, and ensure the quality of the plating film.
In the above embodiment, the optical monitoring module 150 is used to monitor the thickness of the coating film by using various detection methods, and in this embodiment, a beam of white light is emitted to the surface of the film by using an optical interferometry method, and when the white light is incident into the film sample, the reflection spectrum or the transmission spectrum from the sample has a direct relationship with the thickness of the film, and the thickness of the film can be measured by detecting the interference fringes of the reflected light.
It should be further noted that, the optical monitoring module 150 is mounted on the outer housing 110 and/or the inner cylinder 120, it should be understood that the optical monitoring module 150 may be mounted on the outer housing 110 or the inner cylinder 120, and in other embodiments, the optical monitoring module 150 may further include two components that are respectively mounted on the outer housing 110 and the inner cylinder 120, and the two components cooperate.
Specifically, the outer housing 110 is provided with a first mounting hole (not shown in the drawing), and the inner cylinder 120 is provided with a second mounting hole disposed opposite to the first mounting hole, and both the first mounting hole and the second mounting hole are in communication with the working chamber 111. The optical monitoring module 150 includes a transmitting member and a receiving member, the transmitting member is disposed on the first mounting hole, and the receiving member is disposed on the second mounting hole.
In one embodiment, referring to fig. 1 and 2, the coating apparatus 100 further includes a frame 170 and a gas supply chamber 171, the gas supply chamber 171 is connected between the outer housing 110 and the frame 170, and the gas supply chamber 171 is in communication with the working chamber 111, and the gas supply chamber 171 is used to provide isolation gas and/or process gas to the working chamber 111. Therefore, in the atomic layer deposition coating and magnetron sputtering coating processes, a corresponding working environment can be provided for the working chamber 111 through the air supply chamber 171, and the air supply chamber 171 arranged between the outer housing 110 and the frame 170 is beneficial to improving the structural compactness, reducing the overall volume of the coating device 100, and improving the convenience of transportation and movement.
Magnetron sputtering coating is mostly carried out in the presence of a reaction gas, and the stability and optical constants of the compound deposited film depend on the type of gas and the cathode material. The common reactant gas is oxygen, and the common cathode materials are iron, nickel, copper lead, and the like, and sometimes, electro-gold, platinum, palladium, indium, and other metals. The oxide formed by reactive sputtering is a coating material having absorption and not very high refractive index.
In one embodiment, referring to fig. 1 and 3, the coating apparatus 100 further includes a cover assembly 180, and the cover assembly 180 is openably and closably connected to the outer housing 110. In the open state, the cover plate assembly 180 is out of sealing engagement with the cavity opening of the working chamber 111, and in the closed state, the cover plate assembly 180 is in sealing engagement with the cavity opening of the working chamber 111.
Thus, the openable cover plate assembly 180 is provided to facilitate the convenience of operation when the substrate 200 is placed and taken out, and to improve the working efficiency.
Specifically, referring to fig. 1, the cover assembly 180 includes a cover body 181 and a driving member 182 (not shown), the driving member 182 is disposed on the frame 170 and spaced from the outer housing 110, the cover body 181 is connected to an output end of the driving member 182, and the driving member 182 drives the cover body 181 to move in an open state and a closed state. Therefore, the cover body 181 can be moved by the driving action of the driving member 182, thereby realizing automatic opening and closing of the cover body 181.
Alternatively, the driving member 182 may be driven by a motor, a cylinder, a hydraulic or other driving means.
Specifically, the driving member 182 is an air pump. Therefore, the cover plate body 181 is driven by the air pump to rotate, so that the cover plate body 181 can be opened and closed on the outer shell 110, the operation is simple, and the tightness between the cover plate body 181 and the working cavity 111 is guaranteed. The embodiment provides only one specific embodiment of the driving member 182, but is not limited thereto.
In an embodiment, referring to fig. 1 and 3, the film plating apparatus 100 further includes an air extraction pipe 160, the air extraction pipe 160 is disposed in the inner cavity of the inner cylinder 120, the inner cavity of the inner cylinder 120 is provided with an air extraction opening, and the air extraction pipe 160 is communicated with the working cavity 111 through the air extraction opening. In this way, the working chamber 111 can be vacuumized through the air exhaust pipeline 160, and the air exhaust pipe is arranged on one side of the inner wall of the inner cylinder 120, so that the inner space of the inner cylinder 120 can be fully utilized, the structural compactness is improved, and the whole volume of the device is reduced.
Further, referring to fig. 1 and 2, the air extraction pipes 160 and the air extraction openings are multiple, and the air extraction openings are arranged on the inner cylinder 120 at intervals, and the air extraction pipes 160 and the air extraction openings are arranged in a one-to-one correspondence. In this way, on the one hand, the plurality of air extraction pipelines 160 can improve the vacuumizing efficiency and the coating efficiency. In addition, when one air extraction pipeline 160 is damaged, other pipelines can still work normally, so that too much maintenance and production stopping time is not delayed, and the work reliability is guaranteed.
In one embodiment, referring to fig. 3, the coating apparatus 100 further includes a plurality of moving wheels 172, and the plurality of moving wheels 172 are connected to the bottom wall of the frame 170 at intervals. Thus, the whole movement of the plating apparatus 100 is facilitated, and the convenience of installation is improved. Specifically, the moving wheel 172 is a universal wheel.
Alternatively, the outer contour of the outer housing 110 may be circular, rectangular, triangular, regular polygonal, or other irregular shape. The outer contour of the inner cylinder 120 may be circular, rectangular, triangular, regular polygonal, or other irregular shape.
Specifically, referring to fig. 1 and 2, the outer contour of the outer housing 110 is circular, the outer contour of the inner cylinder 120 is circular, the working chamber 111 is annular, and the transporting member is used for carrying the substrate 200 to move circumferentially in the annular working chamber 111. In this way, the plurality of substrates 200 are arranged and rotated along the circumferential direction of the inner cylinder 120, so that the ALD coating process and the magnetron sputtering coating process are performed at different positions, which is beneficial to further improving the utilization rate of the working chamber 111, reducing the volume of the working chamber 111 and reducing the production cost. The present embodiment provides only a specific shape selection of the working chamber 111, but is not limited thereto.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A coating apparatus, characterized in that the coating apparatus comprises:
the outer shell is provided with a first opening and a second opening on the circumferential side wall;
the inner cylinder body is connected to the inside of the outer shell, a working cavity is formed by the circumferential outer wall of the inner cylinder body and the inner wall of the outer shell, and in a working state, the working cavity is in a vacuum state and is used for accommodating a substrate;
the atomic layer deposition assembly is arranged on the shell body and communicated with the working cavity through the first opening, and is used for coating a substrate; and
the magnetron sputtering assembly is arranged on the outer shell and is communicated with the working cavity through the second opening, and the magnetron sputtering assembly is used for coating the substrate.
2. The plating apparatus of claim 1, further comprising a transport member positioned within the working chamber and movable within the working chamber, the transport member for carrying a substrate for movement within the working chamber.
3. The plating apparatus according to claim 1, wherein the inner cylinder is detachably connected to the bottom wall of the outer case, and the inside of the outer case is in a vacuum state after the inner cylinder is detached.
4. The plating apparatus of claim 1, wherein the atomic layer deposition assembly includes a precursor supply and an anode layer ion source, the precursor supply being coupled to the anode layer ion source, the precursor supply being for processing a substrate precursor.
5. The plating apparatus according to claim 1, wherein the number of the magnetron sputtering assemblies is at least two, the number of the second openings is at least two, the two second openings are arranged at intervals on the outer shell, and each magnetron sputtering assembly is communicated with the working cavity through each second opening.
6. The plating apparatus according to claim 5, wherein the magnetron sputtering assembly includes a mounting member and a target, the mounting member being provided with a mounting chamber, the mounting chamber being in communication with the working chamber through the second opening.
7. The plating apparatus according to claim 6, wherein the number of the targets is two or more, and the two or more targets are arranged at intervals in the mounting chamber.
8. The coating apparatus of claim 1, further comprising an optical monitoring module mounted on the outer housing and/or on the inner cylinder, and in communication with the working chamber, the optical monitoring module for monitoring coating thickness.
9. The coating apparatus of claim 1, further comprising a cover plate assembly, the cover plate assembly being openably and closably coupled to the outer housing, the cover plate assembly being out of sealing engagement with the cavity opening of the working chamber in an open condition, and the cover plate assembly being in sealing engagement with the cavity opening of the working chamber in a closed condition.
10. The coating apparatus of any one of claims 1-9, further comprising an extraction duct disposed in the inner cavity of the inner cylinder, the inner cavity of the inner cylinder being provided with an extraction port through which the extraction duct communicates with the working chamber.
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CN202310240225.3A CN116479408A (en) | 2023-03-14 | 2023-03-14 | Coating equipment |
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CN202310240225.3A CN116479408A (en) | 2023-03-14 | 2023-03-14 | Coating equipment |
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