CN116463727A - Liquid source substance bubbler for silicon carbide epitaxial equipment and gas supply system - Google Patents
Liquid source substance bubbler for silicon carbide epitaxial equipment and gas supply system Download PDFInfo
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- CN116463727A CN116463727A CN202310179828.7A CN202310179828A CN116463727A CN 116463727 A CN116463727 A CN 116463727A CN 202310179828 A CN202310179828 A CN 202310179828A CN 116463727 A CN116463727 A CN 116463727A
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- Prior art keywords
- bubbler
- liquid
- pipeline
- liquid source
- silicon carbide
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- 239000007788 liquid Substances 0.000 title claims abstract description 126
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000000126 substance Substances 0.000 title claims abstract description 14
- 239000012159 carrier gas Substances 0.000 claims abstract description 30
- 238000000407 epitaxy Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 16
- 238000005273 aeration Methods 0.000 claims abstract description 13
- 230000001502 supplementing effect Effects 0.000 claims description 25
- 238000005192 partition Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 14
- 238000004321 preservation Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 15
- 238000001802 infusion Methods 0.000 abstract description 12
- 230000008016 vaporization Effects 0.000 abstract description 8
- 238000009834 vaporization Methods 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 6
- 238000005457 optimization Methods 0.000 abstract 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 12
- 239000005052 trichlorosilane Substances 0.000 description 12
- 238000009423 ventilation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses a liquid source substance bubbler and a gas supply system for silicon carbide epitaxy equipment. The liquid source substance bubbler includes: the tank body, the tip of the tank body is provided with the end plate, dispose the pipeline on the end plate, be provided with aeration pipe, fluid infusion pipe and plural layer baffle in the tank body, baffle spaced configuration is in the tank body, and be provided with the bleeder vent on the baffle, aeration pipe intercommunication first pipeline and communicate to the carrier gas source through it, the aeration pipe is including the first pipeline section that is located the below of baffle of lower floor, and dispose plural perforation on the first pipeline section, the carrier is in the perforation entering liquid source of first pipeline section, the fluid infusion pipe is the heliciform, just the inlet of fluid infusion pipe is connected to the second pipeline, the exit of fluid infusion pipe is located the below side of baffle of lower floor. The stable vaporization liquid source is provided for the epitaxial growth process of the silicon carbide epitaxial equipment through the optimization of the design of the tank of the bubbler by improving the structure inside the bubbler.
Description
Technical Field
The application relates to the technical field of silicon carbide chemical vapor deposition equipment, in particular to a liquid source substance bubbler and an air supply system for silicon carbide epitaxial equipment.
Background
Liquid source materials commonly used in silicon carbide epitaxy equipment, including Trichlorosilane (TCS), are stored, transported, and added in a liquid form, and are required to participate in a process reaction in a gaseous form during an epitaxial process. The gaseous state is used because the epitaxial growth process requires that the source material be uniformly distributed and even microscopically sufficiently uniform.
Therefore, based on the needs of the epitaxial process, it is necessary to convert TCS from a liquid state to a gas state safely and reliably with a suitable apparatus, which is currently commonly used as a bubbler, through which a precisely metered amount of process gas or inert gas is introduced as a carrier gas into a liquid source to carry out bubbles containing vapor of the liquid source, and then to transport the bubbles to a desired location in a process tool. The structure of a bubbler commonly used in the current epitaxial process is shown in fig. 1, a liquid source enters the tank body of the bubbler through a liquid supplementing pipe, carrier gas is introduced below the liquid level of the tank bottom, a certain amount of vaporized liquid source is carried by bubbling to reach a gas phase space above the liquid level, and the liquid source is communicated to a reaction cavity of silicon carbide epitaxial equipment through an air outlet pipe for reaction. When the liquid level of the liquid source in the tank body is lower than a preset threshold value, manual liquid supplementing operation is carried out, and the supply of the vaporized liquid source to the reaction cavity is usually controlled manually. The output of the liquid source is influenced by the flow rate and carrying efficiency of the carrier gas, and the linearity between the flow rate of the carrier gas and the carrying amount of the liquid source, namely the carrying efficiency determines the quality of the product. The carrying efficiency of the carrier gas is related to the temperature of the liquid source, the height of the liquid surface, and the pressure in the space above the liquid surface, and when the pressure in the space above the liquid surface is stable, the higher the temperature of the liquid source is, the higher the carrying efficiency is, and the higher the liquid surface of the liquid source is, the higher the carrying efficiency is.
The TCS bubbler system used for silicon carbide epitaxy at present mainly comprises a TCS pot and a pipe fitting connected with the pot at the upstream and the downstream, wherein carrier gas is introduced after a liquid source is filled, and the carrier gas carrying TCS which flows out is transported into a reaction cavity of silicon carbide epitaxy equipment for epitaxial growth. The TCS bubbler system has the following problems in practice:
the output of the liquid source fluctuates greatly and cannot be supplied stably. The liquid level position generally fluctuates greatly, and after the liquid source is replenished, a temperature difference exists between the liquid source and the original liquid source in the tank body, and the temperature difference causes the carrying efficiency of the carrier gas to change, so that the output quantity of the liquid source fluctuates, and the growth speed and the surface morphology of the silicon carbide film are finally affected.
The vaporized source material is easily liquefied during the pipeline transportation process to generate liquid drops. If the liquid drops enter the reaction cavity, defects can be generated, and the process growth is affected; and the contaminated residues caused by cleaning the droplets also require opening the reaction chamber, resulting in low utilization rate of the epitaxial apparatus. The reduced pipeline temperature during pipeline transportation will lead to the vaporized liquid source being supersaturated and re-liquefied into droplets, and the liquid source will also re-liquefy when entering components on the pipeline such as MFC mass flow meters and valves, such as reduced temperature.
The operations such as liquid supplementing of the liquid source are needed to be manually carried out, and the degree of automation is not high.
Disclosure of Invention
To solve the above-mentioned drawbacks, the present application aims to: a bubbler for a liquid source material for a silicon carbide epitaxial apparatus is provided, which provides a stable vaporized liquid source for an epitaxial growth process of the silicon carbide epitaxial apparatus by optimizing the design of a tank of the bubbler itself through structural modification of the inside of the bubbler.
In order to achieve the above purpose, the present application adopts the following technical scheme:
a liquid source bubbler for a silicon carbide epitaxy apparatus comprising:
the tank body, the tip of the tank body is provided with the end plate, be provided with the pipeline on the end plate, the pipeline includes at least: a first pipeline, a second pipeline and a third pipeline,
an aeration pipe, a liquid supplementing pipe and a plurality of layers of partition boards are arranged in the tank body,
the partition board is arranged on the tank body at intervals, and the partition board is provided with air holes,
the aeration pipe is communicated with the first pipeline and is communicated with the carrier gas source through the first pipeline, the aeration pipe comprises a first pipe section positioned below the baffle plate at the lowest layer, a plurality of perforations are arranged on the first pipe section, the carrier enters the liquid source through the perforations of the first pipe section,
the liquid supplementing pipe is spiral, a liquid inlet of the liquid supplementing pipe is connected to the second pipeline, and an outlet of the liquid supplementing pipe is positioned at the lower side of the baffle plate at the lowest layer.
In one embodiment, the outlet of the liquid supplementing pipe is flush with or slightly lower than the first pipe section in the horizontal direction.
In one embodiment, the outlet of the liquid supplementing pipe is 2-7cm away from the baffle plate at the lowest layer.
In one embodiment, the first tube section is configured to be parallel to the separator.
In an embodiment, the fluid infusion tube is made of a high heat conduction material.
In one embodiment, the separator has less than 10 layers. Preferably, the number of layers of the separator is 2-5.
In one embodiment, the area ratio of the air holes to the corresponding separator is 50-70%.
In one embodiment, the positions of the ventilation holes on the partition boards of two adjacent layers are staggered.
In one embodiment, the included angle between the axis of the air hole and the axis of the tank body is 0-90 degrees.
In one embodiment, the direction of the ventilation holes on two adjacent layers of the partition boards is different, so that the flow direction is changed when the air flow continuously passes through the ventilation holes of the two layers of the partition boards. This facilitates the capture of droplets.
The embodiment of the application provides a gas supply system, it includes TCS liquid supply system, and it is connected to the aforesaid is used for the liquid source material bubbler of carborundum epitaxy equipment, the source material of liquid source material bubbler vaporization is carried by the carrier gas and is carried to carborundum epitaxy through the pipeline and establishes, be provided with heat preservation part on the pipeline. The design prevents the source substances vaporized during carrier gas transportation from being liquefied again, and improves the quality of epitaxy.
Advantageous effects
The bubbler ensures that the replenished liquid source substances slowly enter the tank and flow with the liquid source substances (liquid) in the tank through the improvement of the internal structure of the bubbler, and the liquid source substances slowly enter the tank to reduce disturbance on the liquid in the tank, so that a stable vaporization liquid source is provided for the epitaxial growth process of the silicon carbide epitaxial equipment. Through optimizing the connection method between the outlet of the bubbler and the reaction cavity of the equipment, the upper computer of the epitaxial equipment can realize automatic control of the switching action and the liquid supplementing action of the liquid source.
Drawings
The accompanying drawings are included to provide an understanding of the technical aspects of the present disclosure, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present disclosure and together with the embodiments of the disclosure, not to limit the technical aspects of the present disclosure. The shapes and sizes of the various components in the drawings are not to scale, and are intended to be illustrative only of the present application.
Fig. 1 is a schematic structural view of a conventional bubbler.
Fig. 2 is a schematic structural diagram of a bubbler according to an embodiment of the present application.
Fig. 2a is a schematic structural view of the separator shown in fig. 2.
Fig. 3 is a schematic diagram of a bubbler connection epitaxy apparatus and TCS liquid supply system according to an embodiment of the present application.
Detailed Description
The above-described aspects are further described below in conjunction with specific embodiments. It should be understood that these examples are illustrative of the present application and are not limiting the scope of the present application. The implementation conditions employed in the examples may be further adjusted as in the case of the specific manufacturer, and the implementation conditions not specified are typically those in routine experiments.
The application discloses a liquid source substance bubbler and a gas supply system for silicon carbide epitaxy equipment. The liquid source substance bubbler includes: the tank body, the tip of the tank body is provided with the end plate, dispose the pipeline on the end plate, be provided with aeration pipe, fluid infusion pipe and plural layer baffle in the tank body, baffle spaced configuration is in the tank body, and be provided with the bleeder vent on the baffle, aeration pipe intercommunication first pipeline and communicate to the carrier gas source through it, the aeration pipe is including the first pipeline section that is located the below of baffle of lower floor, and dispose plural perforation (a plurality of perforation) on the first pipeline section, the carrier is in penetrating the perforation entering liquid source of first pipeline section, the fluid infusion pipe is the heliciform, and the inlet of fluid infusion pipe is connected to the second pipeline, the exit of fluid infusion pipe is located the below side of baffle of lower floor. In the mode, through improving the internal structure of the bubbler, the design of the tank body of the bubbler is optimized, and a stable vaporization liquid source (MO source) is provided for the epitaxial growth process of the silicon carbide epitaxial equipment.
A bubbler (hereinafter referred to as a bubbler) for a liquid source material for a silicon carbide epitaxial apparatus according to the present application will be described with reference to the accompanying drawings.
Fig. 2 and 2a are schematic structural diagrams of a bubbler according to an embodiment of the present application.
The bubbler 100 includes: the end of the tank 120 is provided with an end plate 110, and a plurality of pipelines are connected to the end plate 110, and the pipelines at least comprise: a first pipeline, a second pipeline and a third pipeline,
the tank 120 is provided with a gas carrying pipe 140, a liquid supplementing pipe 151 and a plurality of layers of partition boards 130,
the partition 130 is disposed in the tank 120 at intervals, and has ventilation holes 131,
the carrier gas pipe 140 is connected to the first pipe and is connected to the carrier gas source through the first pipe, the carrier gas pipe 140 includes a first pipe section 141 that is horizontal (substantially horizontal), the first pipe section 141 is disposed parallel to the partition 130 (substantially horizontal), the first pipe section 141 is located below the lowermost partition 130, a plurality of perforations 142 are disposed on the first pipe section 141, and the carrier gas enters the liquid source through the perforations 142. Preferably, the main body 143 of the carrier gas pipe 140 extends along the axial direction of the can 120. In one embodiment, the first conduit is integrally designed with the carrier gas tube 140. In one embodiment, the body portion 143 is integrally designed with the first tube segment 141. In one embodiment, the end of the first tube segment 141 is provided with a seal 144 so that the carrier gas is introduced into the carrier tube 140 such that the first tube segment 141 flows out of the perforations 142 in the circumference of the first tube segment 141 into the liquid source.
The fluid-filling pipe 151 is spiral, and the fluid inlet of the fluid-filling pipe 151 is connected to a fluid supply system (not shown) through a second pipe 152, and the outlet 151a of the fluid-filling pipe is located below the lowermost separator 130 (e.g. 2-7cm below the lowermost separator). Preferably, the outlet of the liquid supplementing pipe is flush with or slightly lower than the position of the aeration pipe. By such design, the replenishment of the inflowing liquid source liquid reduces disturbance of the original liquid in the tank. Preferably, the tank body is a metal tank. In this embodiment, be provided with the through-hole on this baffle, this through-hole is used for passing the fluid infusion pipe, and this through-hole still is used for fixed fluid infusion pipe, is convenient for in the fluid infusion pipe jar internal setting into the heliciform like this. In this embodiment, the liquid replenishing pipe is made of a high heat-conducting material, and the flow rate of the liquid source which is replenished and flows in can be slowed down by utilizing the spiral shape, so that disturbance to the original liquid in the tank is reduced, the replenished liquid source slowly flows in the liquid replenishing pipe and exchanges heat with the original liquid in the tank through the liquid replenishing pipe, and when the replenished liquid source flows to the outlet, the temperature of the liquid source in the liquid replenishing pipe is the same as or approximately the same as the original liquid temperature in the tank, thus avoiding temperature fluctuation caused by the replenishment liquid source entering the tank, affecting the output fluctuation of the liquid source, and enabling the bubbler to stably supply. In this embodiment, a plurality of layers of spaced partition plates 130 are arranged in the tank body, the partition plates 130 are horizontally arranged, the number of layers is less than 10 (preferably, the number of layers is between 2 and 5), ventilation holes 131 are formed in the partition plates, and the diameter of the ventilation holes is less than 5mm (preferably, the diameter is between 2 and 3 mm). Preferably, the area ratio of the air holes to the area of the partition board is 50-70%. Further, the positions of the ventilation holes on the two adjacent layers of the partition boards are staggered (namely, the projection of one partition board on the other partition board in the two adjacent layers of the partition boards is not overlapped or partially overlapped). By the design, the rising path of the bubbles is zigzag, so that gas-liquid contact and evaporation are promoted, and carrier gas is prevented from taking away more liquid sources in the tank.
In one embodiment, referring to fig. 2, a temperature sensing part 160 is provided in the can 120, one side of which is fixed to the end plate 110. The third pipe 181 is connected to the epitaxial apparatus through a pipe to transfer the carrier gas carrying the source substances to the reaction chamber. In other embodiments, the end plate 110 is also provided with a bleed conduit 171 for use in maintenance or emergency situations.
In an embodiment, with continued reference to fig. 2 and 2a, in the gas phase and liquid drop region above the liquid level 121 of the liquid source in the tank, 2 layers of horizontal baffles (near the end plate 110 side) are disposed, the positions of the ventilation holes of two adjacent layers are staggered, the axial direction of the ventilation holes forms a certain included angle α with the axis of the tank, (0 ° < α <90 °), and the directions of the small holes of two adjacent layers are different, so that when the gas flow continuously passes through the two layers of pore plates, the flow direction changes suddenly. Part of the droplets are removed using the principle of inertia. The baffle is provided with a gap 131a, the gap 131a is used for the liquid supplementing pipe to pass through, and the positions of the gap 131a are different when different layers of baffles are arranged so as to meet the requirement that the liquid supplementing pipe presents a spiral shape in the space in the tank 120. The partition plate is provided with a first through hole 143 through which the carrier gas pipe passes, and a second through hole 161 through which the sheath pipe of the temperature detecting part 160 passes.
The bubbler connection epitaxy apparatus and TCS liquid supply system are described next in connection with figure 3,
the carrier gas carrying the vaporized source material is connected to the reaction chamber 210 of the silicon carbide epitaxial apparatus 200 (hereinafter referred to as apparatus) via a pipe on which a second pneumatic valve V2 is disposed, the second pneumatic valve V2 being configured to be normally closed, which is electrically connected to the control module 220, the second pneumatic valve V2 being actuated (opened/closed) based on an instruction of the control module 220. When the silicon carbide epitaxial device is operated 200, the upper computer can automatically control the output of the source of the bubbler 100 to be turned on and off through the second pneumatic valve V2. The carrier gas is always in an open state, and the second pneumatic valve V2 can automatically supply source substances into the epitaxial reaction chamber 210 as long as it is opened. In the epitaxial reaction, the bubbling gas supply mode gas needs a concentration stabilizing process, and before each epitaxial process runs, the introduced source needs to be firstly introduced into a vent pipeline, and after 5-15 minutes, the stabilized source is introduced into an epitaxial reaction cavity for epitaxial growth.
The fluid replenishment pipe is connected to the TCS fluid supply system 300 via a second pipe, and the second pipe or the pipe in communication with the second pipe is provided with a first pneumatic valve V1, wherein the first pneumatic valve V1 is normally closed, and is electrically connected to the control module 220, and the first pneumatic valve V1 is actuated (opened/closed) based on a command of the control module. The liquid must be automatically replenished immediately after each epitaxial growth of silicon carbide to ensure stable liquid level, and thus stable saturated vapor pressure and concentration, and stable concentration of the source that can be carried in the carrier gas. After each epitaxial growth is completed, the upper computer of the epitaxial device combines a state signal of the dissatisfaction of the TCS pot, immediately gives a signal to the bubbler 200, and after the bubbler receives the signal, the bubbler starts the fluid supplementing valve V1 to carry out fluid supplementing operation, and after fluid supplementing is carried out to a preset position (namely, the state when the wafer is considered to be full), the pneumatic valve V1 is automatically closed to stop fluid supplementing.
There are 2 signals between the device 200 and the bubbler 100, one is a fault signal (including a level alarm) and the other is a make-up signal. The tank is purged with argon prior to injecting the liquid source into the bubbler. After installation, the saturation test is performed first, and the results of the saturation tests are highly coincident (or the difference is within a preset range), so that the vaporization of the liquid source can be proved to reach a stable saturation state.
During operation of the apparatus, the carrier gas carries the vaporized liquid source through the conduit and is introduced into the reaction chamber 210 of the apparatus 200, and if there is a significant temperature drop, the vaporized source material can easily re-liquefy and condense on the inner walls of the conduit and even into the reaction chamber, resulting in epitaxial defects. In this embodiment, in order to avoid re-liquefying the vaporization source during carrier gas transportation, a vaporization source supply pipe from the bubbler to the reaction chamber of the epitaxial apparatus is modified, and a heat-retaining member is provided on the vaporization source supply pipe. Preferably, when the distance between the bubbler and the silicon carbide epitaxy equipment is less than 10 meters, heat preservation cotton is arranged on the source supply pipeline; when the distance between the bubbler and the silicon carbide epitaxy apparatus is greater than 20 meters, an electric heating belt is arranged on the source supply pipeline, and the temperature of the heating belt is set to be gradually increased (generally, the temperature is increased at intervals of 0.5 ℃ or 1 ℃) from the bubbler to the gas holder 230 and from the gas holder 230 to the reaction chamber 210, but the highest temperature cannot be higher than 55 ℃, so that the source is prevented from being liquefied again after contacting with gas components such as a flowmeter with lower temperature.
The foregoing embodiments are provided to illustrate the technical concept and features of the present application and are intended to enable those skilled in the art to understand the contents of the present application and implement the same according to the contents, and are not intended to limit the scope of the present application. All such equivalent changes and modifications as come within the spirit of the disclosure are desired to be protected.
Claims (10)
1. A liquid source bubbler for a silicon carbide epitaxy apparatus, comprising:
the tank body, the tip of the tank body is provided with the end plate, be provided with the pipeline on the end plate, the pipeline includes at least: a first pipeline, a second pipeline and a third pipeline,
an aeration pipe, a liquid supplementing pipe and a plurality of layers of partition boards are arranged in the tank body,
the partition board is arranged on the tank body at intervals, and the partition board is provided with air holes,
the aeration pipe is communicated with the first pipeline and is communicated with the carrier gas source through the first pipeline, the aeration pipe comprises a first pipe section positioned below the baffle plate at the lowest layer, a plurality of perforations are arranged on the first pipe section, the carrier enters the liquid source through the perforations of the first pipe section,
the liquid supplementing pipe is spiral, a liquid inlet of the liquid supplementing pipe is connected to the second pipeline, and an outlet of the liquid supplementing pipe is positioned at the lower side of the baffle plate at the lowest layer.
2. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 1,
in the horizontal direction, the outlet of the liquid supplementing pipe is flush with or slightly lower than the first pipe section.
3. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 1,
the outlet of the liquid supplementing pipe is 2-7cm away from the baffle plate at the lowest layer.
4. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 1,
the first tube section is disposed parallel to the separator.
5. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 1,
the liquid supplementing pipe is made of high-heat-conductivity materials.
6. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 1,
the number of layers of the separator is less than 10.
7. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 1,
the area ratio of the air holes to the corresponding partition plates is 50-70%.
8. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 6 or 7,
the positions of the air holes on the partition boards of two adjacent layers are staggered.
9. A liquid source bubbler for a silicon carbide epitaxy apparatus according to claim 8,
the included angle between the axis of the air hole and the axis of the tank body is 0-90 degrees.
10. A gas supply system, comprising:
a TCS liquid supply system connected to a liquid source substance bubbler for a silicon carbide epitaxy apparatus as claimed in any one of claims 1 to 9,
the source material vaporized by the liquid source material bubbler is carried by the carrier gas and conveyed to the silicon carbide epitaxy device through the pipeline,
and a heat preservation part is arranged on the pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310179828.7A CN116463727A (en) | 2023-02-28 | 2023-02-28 | Liquid source substance bubbler for silicon carbide epitaxial equipment and gas supply system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310179828.7A CN116463727A (en) | 2023-02-28 | 2023-02-28 | Liquid source substance bubbler for silicon carbide epitaxial equipment and gas supply system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116463727A true CN116463727A (en) | 2023-07-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310179828.7A Pending CN116463727A (en) | 2023-02-28 | 2023-02-28 | Liquid source substance bubbler for silicon carbide epitaxial equipment and gas supply system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116463727A (en) |
-
2023
- 2023-02-28 CN CN202310179828.7A patent/CN116463727A/en active Pending
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