CN116463061A - Ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling and preparation and polishing methods thereof - Google Patents
Ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling and preparation and polishing methods thereof Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 148
- 239000000126 substance Substances 0.000 title claims abstract description 58
- 239000013078 crystal Substances 0.000 title claims abstract description 57
- 230000008878 coupling Effects 0.000 title claims abstract description 22
- 238000010168 coupling process Methods 0.000 title claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000008367 deionised water Substances 0.000 claims abstract description 29
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000007800 oxidant agent Substances 0.000 claims abstract description 27
- 239000002270 dispersing agent Substances 0.000 claims abstract description 23
- 230000001590 oxidative effect Effects 0.000 claims abstract description 23
- 239000011941 photocatalyst Substances 0.000 claims abstract description 23
- 238000012545 processing Methods 0.000 claims abstract description 15
- 230000003746 surface roughness Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims description 22
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910000859 α-Fe Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 5
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 4
- HDMGAZBPFLDBCX-UHFFFAOYSA-M potassium;sulfooxy sulfate Chemical group [K+].OS(=O)(=O)OOS([O-])(=O)=O HDMGAZBPFLDBCX-UHFFFAOYSA-M 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 150000002191 fatty alcohols Chemical class 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004439 roughness measurement Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000002572 peristaltic effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides an ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling and a preparation and polishing method thereof. The polishing solution used comprises A, B components, wherein the component A consists of an oxidant, an abrasive, a dispersing agent and deionized water, and the component B consists of an ultraviolet photocatalyst and deionized water. The experimental setting shows that the rotation speed of the polishing disc is 60-80r/min, the polishing pressure is 20-40KPa, the flow rate of the polishing solution is 6-10ml/min, the ultraviolet light is irradiated, and A, B components are dripped on the polishing pad at the same flow rate. The laser crystal processed by the polishing method has the surface roughness of Ra0.15-0.3nm, the surface precision PV value of lambda/7 (lambda=632.8 nm), the material removal rate of 26nm/min, no scratch and obvious damage on the surface of the processed crystal, and can realize the high-efficiency and high-quality processing of the laser crystal. Compared with the traditional silica sol chemical mechanical polishing, the surface roughness of the crystal is reduced, the surface type precision is improved, the processing efficiency is improved by more than 2 times, and the working time can be effectively shortened.
Description
Technical Field
The invention belongs to the field of ultra-thin laser crystal ultra-precise machining, and relates to ultra-thin laser crystal chemical mechanical polishing solution based on optical field coupling and a preparation and polishing method thereof.
Background
The laser crystal has high thermal conductivity, stable physical and chemical properties and excellent optical performance, and is one of the most widely used laser gain media in solid lasers. With the continuous development of laser technology, higher requirements are put forward on the surface quality of a laser gain medium, and the surface quality of the medium directly influences the service life and the performance of a solid laser, so that the high-efficiency ultra-precise machining of a laser crystal is of great significance.
Chemical mechanical polishing belongs to a technology combining chemical and mechanical actions, and is considered as the only ultra-precise machining method capable of realizing global planarization and atomic-level removal of the surface of a machined workpiece. The basic principle is as follows: the surface of the workpiece is chemically reacted with an oxidant or a catalyst in the polishing solution to generate a layer of relatively soft intermediate product, and the soft layer is removed under the combined action of abrasive particles and a polishing pad, so that a smooth surface is obtained.
At present, al is generally adopted in the chemical mechanical polishing process of ultrathin laser crystals 2 O 3 The hard abrasive or the silica sol soft abrasive is used for polishing, the former has the problems of poor surface processing quality, serious subsurface damage and the like, and the latter has the problems of low processing efficiency, poor surface type precision and the like. The ultra-thin laser crystal has weak rigidity, and long processing time is easy to cause accumulation of wafer processing stress, and finally deformation is caused. Meanwhile, the wafer plane type precision PV value can directly act on the optical performance of the gain medium. Therefore, the research and development of the high-efficiency high-quality laser crystal chemical mechanical polishing method has important effects on reducing the processing cost of the laser crystal and improving the performance of a laser.
Disclosure of Invention
The invention provides an ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling and a preparation and polishing method thereof, which are used for solving the problems of single polishing solution type, poor processing quality, low processing efficiency, poor surface type precision and the like in the traditional chemical mechanical polishing method of laser crystals. The invention adopts the following technical means:
an ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling comprises an oxidant, a photocatalyst, an abrasive, a dispersing agent and deionized water; the polishing solution A component is prepared by uniformly mixing and stirring an oxidant, an abrasive, a dispersing agent and deionized water; the polishing solution B component is formed by uniformly mixing and stirring a photocatalyst and deionized water, wherein the concentration of an oxidant in the polishing solution A component is 0.0025-0.04 g/ml, the concentration of an abrasive is 0.04-0.10 g/ml, the particle size is 0.03-0.3 mu m, and the concentration of a dispersing agent is 0.5-1.5 g/L; the component B comprises the following components: the concentration of the ultraviolet light photocatalyst is 0.08-0.16 g/L
Further, the oxidant is potassium hydrogen persulfate or potassium peroxodisulfate, and the concentration of the oxidant is 0.01g/ml.
Further, the abrasive is one or more of silicon dioxide, cerium oxide, zirconium oxide and aluminum oxide.
Further, the abrasive is zirconia, the zirconia concentration is preferably 0.08g/ml, and the zirconia average particle diameter is 0.08 μm.
Further, the dispersing agent is one or more of sodium dodecyl benzene sulfonate, sodium dodecyl sulfate and sodium fatty alcohol sulfate.
Further, the ultraviolet photocatalyst is one or more of manganese ferrite, cobalt ferrite, titanium dioxide and graphene.
Further, A, B components are simultaneously added dropwise at the same flow rate and are suitable for the final processing stage of the laser crystal, and the flow rate of the polishing solution is 6-10 ml/min.
The invention also discloses a preparation method of the ultrathin laser crystal chemical mechanical polishing solution based on light field coupling, which comprises the following steps:
respectively adding an abrasive, an oxidant and a dispersing agent into deionized water at room temperature, stirring uniformly, and performing ultrasonic vibration to obtain a polishing solution A component; and adding the photocatalyst into deionized water at room temperature, stirring uniformly, and performing ultrasonic vibration to obtain a polishing solution B component.
The invention also discloses a high-quality and high-efficiency chemical mechanical polishing method of the ultrathin laser crystal body based on optical field coupling, which comprises the following steps:
firstly, preparing chemical mechanical polishing solution;
mixing and stirring an oxidant, an abrasive, a dispersing agent and deionized water uniformly at room temperature, and performing ultrasonic vibration to obtain a polishing solution A component; at room temperature, mixing and stirring an ultraviolet photocatalyst and deionized water uniformly, and carrying out ultrasonic vibration to obtain a polishing solution B component;
second, using the IC1000 polishing pad as the polishing pad for chemical mechanical polishing, and trimming the polishing pad;
thirdly, under the irradiation of an ultraviolet light source, the components of the polishing solution A, B are dripped on a polishing pad at the same flow rate, the laser crystal is subjected to chemical mechanical polishing, the surface of the crystal with the surface roughness Ra0.15-0.3nm can be obtained after processing for 1 hour, the surface type precision PV value is lambda/7, and the material removal rate can reach 26nm/min.
Further, the rotation speed of the polishing disc is 60-80r/min, the polishing pressure is 20-40KPa, the flow rate of the polishing solution is 6-10ml/min, the wavelength of ultraviolet light is 254nm, and an ultraviolet light source is arranged at a position 10-20 cm above a polishing solution outlet; the ultrasonic vibration time of the polishing solution is 5-10 minutes.
The technical scheme can also be used for chemical mechanical polishing of silicon wafers, silicon carbide, gallium nitride and metal materials.
The invention has the following effects and benefits: the material removal rate of the invention is 26nm/min, which is more than 2 times of that of the traditional chemical mechanical polishing. The surface roughness of the laser crystal is reduced, the surface type precision is improved, and the surface of the processed workpiece is free from scratches and obvious damage.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to the drawings without inventive effort to a person skilled in the art.
FIG. 1 is a graph showing the surface morphology of an ultra-thin laser crystal after chemical mechanical polishing in example 1 of the present invention.
FIG. 2 is a graph showing the surface roughness measurement of an ultra-thin laser crystal after chemical mechanical polishing in example 1 of the present invention.
FIG. 3 is a graph showing the surface morphology of an ultra-thin laser crystal after chemical mechanical polishing in example 2 of the present invention.
FIG. 4 is a graph showing the surface roughness measurement of an ultra-thin laser crystal after chemical mechanical polishing in example 2 of the present invention.
Fig. 5 is a graph of surface type accuracy measurement of an ultra-thin laser crystal after chemical mechanical polishing.
FIG. 6 is a graph showing the comparison of the surface quality and the removal rate after polishing by using the conventional chemical mechanical polishing liquid and the novel photo-assisted chemical mechanical polishing liquid.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention discloses an ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling, which comprises an oxidant, a photocatalyst, an abrasive, a dispersing agent and deionized water; the polishing solution A component is prepared by uniformly mixing and stirring an oxidant, an abrasive, a dispersing agent and deionized water; the polishing solution B component is formed by uniformly mixing and stirring a photocatalyst and deionized water, wherein the concentration of an oxidant in the polishing solution A component is 0.0025-0.04 g/ml, the concentration of an abrasive is 0.04-0.10 g/ml, the particle size is 0.03-0.3 mu m, and the concentration of a dispersing agent is 0.5-1.5 g/L; the component B comprises the following components: the concentration of the ultraviolet light photocatalyst is 0.08-0.16 g/L
Further, the oxidizing agent is potassium hydrogen persulfate or potassium peroxodisulfate, and the concentration of the oxidizing agent is preferably 0.01g/ml.
Further, the abrasive is one or more of silicon dioxide, cerium oxide, zirconium oxide and aluminum oxide.
Further, the abrasive is zirconia, the zirconia concentration is preferably 0.08g/ml, and the zirconia average particle diameter is 0.08 μm.
Further, the dispersing agent is one or more of sodium dodecyl benzene sulfonate, sodium dodecyl sulfate and sodium fatty alcohol sulfate.
Further, the ultraviolet photocatalyst is one or more of manganese ferrite, cobalt ferrite, titanium dioxide and graphene.
Further, A, B components are simultaneously added dropwise at the same flow rate and are suitable for the final processing stage of the laser crystal, and the flow rate of the polishing solution is 6-10 ml/min.
The invention also discloses a preparation method of the ultrathin laser crystal chemical mechanical polishing solution based on light field coupling, which comprises the following steps:
respectively adding an abrasive, an oxidant and a dispersing agent into deionized water at room temperature, stirring uniformly, and performing ultrasonic vibration to obtain a polishing solution A component; and adding the photocatalyst into deionized water at room temperature, stirring uniformly, and performing ultrasonic vibration to obtain a polishing solution B component.
The invention also discloses a high-quality and high-efficiency chemical mechanical polishing method of the ultrathin laser crystal body based on optical field coupling, which comprises the following steps:
firstly, preparing chemical mechanical polishing solution;
mixing and stirring an oxidant, an abrasive, a dispersing agent and deionized water uniformly at room temperature, and performing ultrasonic vibration to obtain a polishing solution A component; at room temperature, mixing and stirring an ultraviolet photocatalyst and deionized water uniformly, and carrying out ultrasonic vibration to obtain a polishing solution B component;
second, using the IC1000 polishing pad as the polishing pad for chemical mechanical polishing, and trimming the polishing pad;
thirdly, under the irradiation of an ultraviolet light source, the components of the polishing solution A, B are dripped on a polishing pad at the same flow rate, the laser crystal is subjected to chemical mechanical polishing, the surface of the crystal with the surface roughness Ra0.15-0.3nm can be obtained after processing for 1 hour, the surface type precision PV value is lambda/7 (lambda=632.8 nm), and the material removal rate can reach 26nm/min.
Further, the rotation speed of the polishing disc is 60-80r/min, the polishing pressure is 20-40KPa, the flow rate of the polishing solution is 6-10ml/min, the wavelength of ultraviolet light is 254nm, and an ultraviolet light source is arranged at a position 10-20 cm above a polishing solution outlet; the ultrasonic vibration time of the polishing solution is 5-10 minutes.
Example 1
The embodiment discloses an ultrathin laser crystal high-quality high-efficiency chemical mechanical polishing method based on optical field coupling, which specifically comprises the following steps:
and 1, preparing chemical mechanical polishing solution. The grinding material selects zirconia with the concentration of 0.08g/ml and the granularity of 0.08 mu m; the oxidant is potassium hydrogen persulfate with the concentration of 0.01g/ml; the dispersing agent is sodium dodecyl benzene sulfonate, and the concentration is 1g/L; the photocatalyst selects manganese ferrite with the concentration of 0.10g/L. Adding an abrasive, an oxidant and a dispersing agent into deionized water, uniformly stirring, and performing ultrasonic vibration for 10min to obtain a polishing solution A component; adding the ultraviolet photocatalyst into deionized water, stirring uniformly, and performing ultrasonic oscillation for 10min to obtain a polishing solution B component.
Step 2, adopting the dimensionThe IC1000 polishing pad of (C) was used as a polishing pad for chemical mechanical polishing, and the polishing pad was dressed and cleaned with deionized water.
And 3, conveying the polishing solutions of the components in the steps 3 and A, B by adopting two peristaltic pumps respectively, and simultaneously dripping the polishing solutions of the two components onto the polishing pad at a flow rate of 8 ml/min.
And 4, setting the polishing pressure to be 30KPa, setting the rotating speed of a polishing disc to be 80r/min, and placing an ultraviolet light source at a position 10cm above a polishing liquid outlet.
FIG. 1 is a graph of the surface morphology of an ultrathin laser crystal after chemical mechanical polishing, which is 10 times enlarged, and the graph shows that the crystal surface has no scratches and obvious damage.
FIG. 2 is a graph of surface roughness measurements after chemical mechanical polishing of an ultra-thin laser crystal, where the roughness is seen to be Ra0.170nm.
Example 2
The embodiment discloses an ultrathin laser crystal high-quality high-efficiency chemical mechanical polishing method based on optical field coupling, which specifically comprises the following steps:
and 1, preparing chemical mechanical polishing solution. The abrasive material is alumina with the concentration of 0.07g/ml and the granularity of 0.05 mu m; the oxidant is potassium peroxodisulfate with the concentration of 0.015g/ml; the dispersing agent is sodium dodecyl benzene sulfonate, and the concentration is 0.75g/L; the photocatalyst selects titanium dioxide with the concentration of 0.08g/L. Adding an abrasive, an oxidant and a dispersing agent into deionized water, uniformly stirring, and performing ultrasonic vibration for 10min to obtain a polishing solution A component; adding the ultraviolet photocatalyst into deionized water, stirring uniformly, and performing ultrasonic oscillation for 10min to obtain a polishing solution B component.
Step 2, adopting the dimensionThe IC1000 polishing pad of (C) was used as a polishing pad for chemical mechanical polishing, and the polishing pad was dressed and cleaned with deionized water.
And 3, conveying the polishing solutions of the components in the steps 3 and A, B by adopting two peristaltic pumps respectively, and simultaneously dripping the polishing solutions of the two components onto the polishing pad at a flow rate of 8 ml/min.
And 4, setting the polishing pressure to be 30KPa, setting the rotating speed of a polishing disc to be 80r/min, and placing an ultraviolet light source at a position 10cm above a polishing liquid outlet.
FIG. 3 is a graph of the surface morphology of an ultrathin laser crystal after chemical mechanical polishing, which is 10 times enlarged, and the graph shows that the crystal surface has no scratches and obvious damage.
FIG. 4 is a graph of surface roughness measurements after chemical mechanical polishing of an ultra-thin laser crystal, which can be seen to have a roughness of Ra0.274nm.
Fig. 5 is a graph of surface type accuracy measurement of an ultra-thin laser crystal after chemical mechanical polishing. Fig. 6 is a bar graph comparing surface quality and removal rate after polishing with a conventional silica sol chemical mechanical polishing solution and a novel photo-assisted chemical mechanical polishing solution, and it can be seen that the material removal rate is higher than that of the prior art by more than 2 times. The surface roughness of the laser crystal is reduced, and the surface type precision is improved.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. An ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling is characterized by comprising an oxidant, a photocatalyst, an abrasive, a dispersing agent and deionized water; the polishing solution A component is prepared by uniformly mixing and stirring an oxidant, an abrasive, a dispersing agent and deionized water; the polishing solution B component is formed by uniformly mixing and stirring a photocatalyst and deionized water, wherein the concentration of an oxidant in the polishing solution A component is 0.0025-0.04 g/ml, the concentration of an abrasive is 0.04-0.10 g/ml, the particle size is 0.03-0.3 mu m, and the concentration of a dispersing agent is 0.5-1.5 g/L; the component B comprises the following components: the concentration of the ultraviolet photocatalyst is 0.08-0.16 g/L.
2. The ultra-thin laser crystal chemical mechanical polishing solution based on optical field coupling according to claim 1, wherein the oxidizing agent is potassium hydrogen persulfate or potassium peroxodisulfate, and the concentration of the oxidizing agent is 0.01g/ml.
3. The ultra-thin laser crystal chemical mechanical polishing solution based on optical field coupling as claimed in claim 1, wherein the abrasive is one or more of silicon dioxide, cerium oxide, zirconium oxide and aluminum oxide.
4. The ultra-thin laser crystal chemical mechanical polishing solution based on optical field coupling according to claim 1, wherein the abrasive is zirconia, the zirconia concentration is preferably 0.08g/ml, and the average grain size of the zirconia is 0.08 μm.
5. The ultrathin laser crystal chemical mechanical polishing solution based on light field coupling as recited in claim 1, wherein the dispersing agent is one or more of sodium dodecyl benzene sulfonate, sodium dodecyl sulfate and sodium fatty alcohol sulfate.
6. The ultrathin laser crystal chemical mechanical polishing solution based on light field coupling as claimed in claim 1, wherein the ultraviolet photocatalyst is one or more of manganese ferrite, cobalt ferrite, titanium dioxide and graphene.
7. The ultra-thin laser crystal chemical mechanical polishing solution based on optical field coupling as claimed in claim 1, wherein A, B is simultaneously added dropwise at the same flow rate to be suitable for the final processing stage of the laser crystal, and the flow rate of the polishing solution is 6-10 ml/min.
8. A method for preparing the ultrathin laser crystal chemical mechanical polishing solution based on optical field coupling as claimed in any one of claims 1 to 7, which is characterized by comprising the following steps:
respectively adding an abrasive, an oxidant and a dispersing agent into deionized water at room temperature, stirring uniformly, and performing ultrasonic vibration to obtain a polishing solution A component; and adding the photocatalyst into deionized water at room temperature, stirring uniformly, and performing ultrasonic vibration to obtain a polishing solution B component.
9. The high-quality and high-efficiency chemical mechanical polishing method for the ultrathin laser crystal body based on optical field coupling is characterized by comprising the following steps of:
firstly, preparing chemical mechanical polishing solution;
mixing and stirring an oxidant, an abrasive, a dispersing agent and deionized water uniformly at room temperature, and performing ultrasonic vibration to obtain a polishing solution A component; at room temperature, mixing and stirring an ultraviolet photocatalyst and deionized water uniformly, and carrying out ultrasonic vibration to obtain a polishing solution B component;
second, using the IC1000 polishing pad as the polishing pad for chemical mechanical polishing, and trimming the polishing pad;
thirdly, under the irradiation of an ultraviolet light source, the components of the polishing solution A, B are dripped on a polishing pad at the same flow rate, the laser crystal is subjected to chemical mechanical polishing, the surface of the crystal with the surface roughness Ra0.15-0.3nm can be obtained after processing for 1 hour, the surface type precision PV value is lambda/7, and the material removal rate can reach 26nm/min.
10. The method according to claim 9, wherein the rotation speed of the polishing disc is 60-80r/min, the polishing pressure is 20-40KPa, the flow rate of the polishing liquid is 6-10ml/min, the wavelength of ultraviolet light is 254nm, and the ultraviolet light source is arranged at a position 10-20 cm above the outlet of the polishing liquid; the ultrasonic vibration time of the polishing solution is 5-10 minutes.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108838745A (en) * | 2018-06-27 | 2018-11-20 | 大连理工大学 | A kind of efficient chemical mechanical polishing method of yag crystal |
| CN113831845A (en) * | 2021-10-29 | 2021-12-24 | 大连理工大学 | Visible light-assisted diamond chemical mechanical polishing solution and polishing method |
| CN115851137A (en) * | 2022-12-20 | 2023-03-28 | 青岛福禄泰科表面材料科技有限公司 | Polishing solution for semiconductor material and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108838745A (en) * | 2018-06-27 | 2018-11-20 | 大连理工大学 | A kind of efficient chemical mechanical polishing method of yag crystal |
| CN113831845A (en) * | 2021-10-29 | 2021-12-24 | 大连理工大学 | Visible light-assisted diamond chemical mechanical polishing solution and polishing method |
| CN115851137A (en) * | 2022-12-20 | 2023-03-28 | 青岛福禄泰科表面材料科技有限公司 | Polishing solution for semiconductor material and preparation method thereof |
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