CN116449088A

CN116449088A - Transient test circuit for realizing rapid jump of input voltage

Info

Publication number: CN116449088A
Application number: CN202310399732.1A
Authority: CN
Inventors: 陈旭
Original assignee: Wuhan Xinbida Microelectronics Co ltd
Current assignee: Wuhan Xinbida Microelectronics Co ltd
Priority date: 2023-04-14
Filing date: 2023-04-14
Publication date: 2023-07-18

Abstract

The invention discloses a transient test circuit for realizing rapid jump of input voltage, which comprises a jump unit consisting of a high-side switch and a low-side switch; when the input end of the hopping unit inputs high voltage, the low-side switch is turned off, the high-side switch is turned on, and a first power supply communicated with the high-side switch provides high hopping voltage to the output end of the hopping unit; when the input end of the hopping unit inputs low voltage, the high-side switch is turned off, the low-side switch is turned on, and a second power supply communicated with the low-side switch provides low hopping voltage to the output end of the hopping unit. The invention has simple circuit, extremely low cost and strong universality, and can realize the testing capability of professional equipment by matching with conventional instrument equipment.

Description

Transient test circuit for realizing rapid jump of input voltage

Technical Field

The invention relates to the field of electrical performance testing of semiconductor power chips, DCDC power products and automobile electronic products, in particular to a testing circuit for realizing continuous and rapid transient change and instantaneous interruption drop of power input voltage.

Background

Products adopting DC direct current power supply, such as semiconductor chips, data communication products, automobile electronic products and the like, relate to an input voltage transient response test and an EMC electromagnetic compatibility immunity test in order to verify the strain capacity and immunity of the electronic products to the transient abrupt change of input voltage. In the test of LDO and DCDC chips with rapid transient response characteristics, the change slope of the input voltage is required to reach more than 1V/us; in data communication products, as specified in IEC61000-4-29, the rise and fall time of the required voltage is within 1us to 50 us; in a test of an electronic product of a vehicle, such as ISO16750, which simulates that a fuse of other loads in the vehicle is blown to cause instantaneous drop of the voltage of the battery, the voltage is required to be increased to a time less than 100us. For these test scenarios, the faster and better the slope of the output voltage change of the device instrument is required.

The prior art has the defects that:

1. the jump slope of the output voltage of the common programmable direct current power supply which is usually used is basically below 0.1V/us, the slope requirement of 1V/us or even more than tens of V/us can not be met, and the electrical performance of the product can not be well verified.

2. Only professional EMC testing institutions or a few expensive high-performance instruments and equipment can meet the testing requirements, so that the testing cost is high and the universality is poor. And these instruments cannot simultaneously have a wide voltage range (0-100V) and a rapid jump of a wide current range (0-10A).

Disclosure of Invention

In order to overcome the defects in the prior art, the invention provides a transient test circuit for realizing rapid jump of input voltage, which is used for solving at least one technical problem through a simple circuit scheme and meeting the test requirements of the scene.

According to an aspect of the present disclosure, a transient test circuit for implementing rapid jump of an input voltage is provided, including a jump unit composed of a high-side switch and a low-side switch; when the input end of the hopping unit inputs high voltage, the low-side switch is turned off, the high-side switch is turned on, and a first power supply communicated with the high-side switch provides high hopping voltage to the output end of the hopping unit; when the input end of the hopping unit inputs low voltage, the high-side switch is turned off, the low-side switch is turned on, and a second power supply communicated with the low-side switch provides low hopping voltage to the output end of the hopping unit.

According to the technical scheme, the low-side switch is turned on when low voltage is input, the high-side switch is turned on when high voltage is input, the high-side switch and the low-side switch are not turned on at the same time, when the input voltage is switched between low voltage and high voltage, the voltage can be quickly hopped through the conduction or the cut-off of the high-side switch and the low-side switch, the corresponding hopping voltage is output, and therefore the input voltage is quickly hopped through a simple and low-cost circuit.

Further, the first power supply is set to a high voltage to be hopped, and the second power supply is set to a low voltage to be hopped.

Further, the input voltage acquired by the hopping unit may be generated by a signal generator. When the signal generator generates a square wave voltage signal of 0-10V, the high-side switch and the low-side switch can realize the rapid switching and jump of the output voltage within the range of 0-10V.

As a further technical scheme, the high-side switch comprises a triode and a current limiting resistor, and the low-side switch comprises a MOS tube; the emitter of the triode is connected with a first power supply, and the base of the triode is connected with a current-limiting resistor; the source electrode of the MOS tube is connected with a second power supply, and the grid electrode of the MOS tube is connected with the current limiting resistor at the input end of the jumping unit; and the collector electrode of the triode and the drain electrode of the MOS light are connected to the output end of the hopping unit.

Specifically, when the input voltage is 0V, the triode works in a cut-off area, and the high-side switch is turned off; the MOS tube is in a conducting state, the low-side switch is conducted, and the second power supply outputs low voltage to the tested equipment through the MOS tube. When the input voltage jumps from 0V to 10V, the MOS tube is turned off rapidly, namely the low-side switch is turned off; meanwhile, the triode is rapidly switched to a saturation region to work, namely the high-side switch is conducted, and the first power supply outputs high voltage to tested equipment through the triode. When the input voltage jumps from 10V to 0V again, the process is repeated, the high-side switch is turned off, the low-side switch is turned on, and the second power supply outputs low voltage to the tested equipment through the MOS tube.

As a further technical scheme, the transient test circuit further includes a level shift module, disposed at an input end of the hopping unit, for increasing an input voltage range to a preset voltage range.

Considering that the voltage range of the existing signal generator is generally 0-10V, the current range is generally 0-50mA, and the test requirements of wide-range output voltage and wide-range output current cannot be met, the level transfer module is arranged to improve the voltage and current output range, and realize wide-range voltage output and wide-range current output so as to meet the test requirements.

Furthermore, as the rising and falling time of the signal generator is adjustable, the rising and falling time of the output voltage of the level shifting module can be directly adjusted by adjusting the rising and falling time of the signal generator, and the rising and falling time of the output voltage of the level shifting module directly controls the on and off speeds of the high-side switch and the low-side switch, thereby realizing the adjustable jump slope of the final output voltage. Therefore, the level transfer module can be matched with the signal generator to realize the jump slope of tens of V/us on the basis of realizing the voltage output and the current output in a wide range, which is far higher than the jump rate which can be achieved by the conventional programmable direct current power supply at present, and can well meet the electrical performance test requirement of the product.

As a further technical scheme, in the transient test circuit provided with the level transfer module, the low-side switch comprises a MOS transistor and a zener diode, and the high-side switch comprises a triode and a current limiting resistor.

Because the level transfer module performs level transfer on the input voltage, the input voltage entering the low-side switch is increased, and therefore the voltage stabilizing diode is arranged to prevent the grid overvoltage of the MOS tube of the low-side switch from being damaged.

As a further technical scheme, the level transfer module is realized by adopting a mode of combining a resistor with a triode or combining a resistor with an MOS tube.

Preferably, the level transfer module consists of an N-type channel MOS tube and a resistor. The drain electrode of the N-type channel MOS tube is connected with the resistor in series and is connected with the first power supply, so that level transfer is realized, the drain electrode output voltage of the N-type channel MOS tube can reach the first power supply voltage, and the problem that the output voltage capacity of the existing signal generator is insufficient to drive the rear-stage low-side switch MOS tube is solved.

As a further technical scheme, the transient test circuit further includes a discharging module, which is located at an output end of the jumping unit, and is configured to discharge the high jumping voltage generated by the high-side switch when the high-side switch is switched on to the low-side switch.

When the wide-range voltage/current output is realized, the high voltage energy is rapidly consumed through the discharging module, so that the voltage of the output end is reduced to 0V, and the stability of the low jump voltage is ensured.

As a further technical scheme, the discharging module comprises a high-capacity electrolytic capacitor, a pure power resistor or an MOS tube.

As a further technical scheme, the transient test circuit further comprises an anti-reflection module which is positioned between the low-side switch and the second power supply and used for preventing the discharge current of the output end from flowing into the second power supply when the high-low voltage is rapidly switched.

As a further technical scheme, the anti-reverse module comprises a diode or an MOS tube.

As a further technical scheme, the second power supply is a double-image-limit direct current power supply. In the case that the second power supply is a dual-image power supply, that is, the supporting current flows into the device, the bleeder module and the anti-reflection module may not be selected even if the level shifting module is arranged in the transient test circuit.

Compared with the prior art, the invention has the beneficial effects that:

(1) The invention can realize the jump slope of tens V/us at maximum through simulation test, and the jump slope is adjustable and is far higher than the jump rate which can be achieved by the conventional programmable DC power supply at present.

(2) The invention can support the wide output voltage range (0-100V), the wide output current range (0-10A), the voltage jump slope is adjustable, and the invention can almost cover the test requirements of all semiconductor chips, and the test requirements of most medium-low power DCDC communication power supply products (48V power supply systems) and most automobile electronic products (12V/24V/48V power supply systems).

(3) The invention designs a special bleeder circuit, and the risk of equipment damage caused by the fact that bleeder current flows into power equipment is avoided.

(4) The invention has simple circuit, extremely low cost and strong universality, and can realize the testing capability of professional equipment by matching with conventional instrument equipment.

Drawings

Fig. 1 is a schematic circuit diagram of a transient test circuit for implementing rapid transitions of an input voltage according to an embodiment of the present invention.

Fig. 2 is a schematic circuit diagram of a transient test circuit for implementing rapid transitions of an input voltage according to yet another embodiment of the present invention.

Fig. 3 is a circuit block diagram of a transient test circuit for implementing rapid transitions of an input voltage according to yet another embodiment of the present invention.

Fig. 4 is a schematic diagram of a transient test waveform of a transient test circuit for implementing a rapid jump in input voltage according to another embodiment of the invention.

Fig. 5 is a schematic circuit diagram of a transient test circuit for implementing a rapid transition of an input voltage according to another embodiment of the present invention.

Detailed Description

The following description of the embodiments of the present invention will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.

In the description of the present invention, it should be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.

In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.

Aiming at the defects of the current common programmable direct current power supply and the problems of high price and poor universality of the test equipment of the professional test mechanism, the invention provides a transient test circuit which can realize the wide output voltage range (0-100V), the wide output current range (0-10A), the adjustable voltage jump slope and the maximum slope of 30V/us, and has no risk of equipment damage caused by the fact that the discharge current flows into the power equipment. The electrical characteristics of the technical scheme can almost meet the power supply crosstalk test requirements of all semiconductor chips, and most of the power supply crosstalk test requirements of medium-low power DCDC communication power supply products (48 Vdc power supply systems) and automobile electronic products (12V/24V/48V power supply systems).

The core part of the transient test circuit is the fast switching and jump realized by the high-side switch and the low-side switch, and in practical application, a level transfer module, an anti-reflection module or a bleeder module can be additionally arranged according to the voltage or current range which is switched according to practical requirements. By way of example only, a level shifting block may not be required when performing a 0-10V low voltage switch. Alternatively, in the case where the second power supply V2 is a two-pixel power supply, i.e., a supporting current flowing into the inside of the apparatus, the anti-reverse module and the bleeder module may not be required.

Example 1

The embodiment provides a transient test circuit for realizing rapid jump of input voltage, which is used for realizing switching and jump of the input voltage by a simple circuit with low cost. As shown in fig. 1, the hopping unit includes a high-side switch and a low-side switch, the high-side switch is composed of a triode Q2 and a current-limiting resistor R2, and the low-side switch is composed of a MOS transistor Q3.

The emitter of the triode Q2 is connected with a first power supply V1, the base is connected with a current limiting resistor R2, and the collector is connected with the drain of the MOS tube Q3. The grid electrode of the MOS tube Q3 is connected with the signal generator, the source electrode is connected with the second power supply V2, and the drain electrode is connected with the collector electrode of the triode Q2. The collector of the triode Q2 is connected with the drain of the MOS tube Q3 to the output end VOUT.

The signal generator can generate a square wave voltage signal of 0-10V, and the rising and falling slopes of the square wave voltage signal can be adjusted. The output voltage of the signal generator is the input voltage of the jumping unit, and the output voltage VOUT of the jumping unit is the input voltage of the tested equipment.

The working principle of the embodiment is as follows:

(1) Acquiring the rising and falling slope requirements of a voltage jump range (such as 0V-10V) required to be generated and a signal generator;

(2) Setting a first power supply V1 as high voltage to be hopped, setting a second power supply V2 as low voltage to be hopped, and starting the first power supply V1 and the second power supply V2;

(3) Setting a signal generator to generate a square wave voltage signal of 0-10V, wherein the rising and falling slopes can be adjusted to 100us, and starting the signal generator;

(4) When the voltage output by the signal generator is 0V, the triode Q2 works in a cut-off area, and the high-side switch is turned off; the MOS tube Q3 is in a conducting state, the low-side switch is conducted, the second power supply V2 outputs low voltage to the tested equipment through the MOS tube, and VOUT is the output voltage of the second power supply V2 at the moment;

when the voltage output by the signal generator jumps from 0V to 10V, the MOS transistor Q3 is rapidly turned off, namely the low-side switch is turned off; meanwhile, the triode Q2 is rapidly switched to a saturation region for working, namely a high-side switch is conducted, the first power supply V1 outputs high voltage to tested equipment through the triode Q2, and VOUT is output voltage of the first power supply V1 at the moment;

when the voltage output by the signal generator jumps from 10V to 0V again, the triode Q2 is cut off, and the high-side switch is turned off; the MOS tube Q3 is conducted, the low-side switch is conducted, the second power supply V2 outputs low voltage to tested equipment through the MOS tube, and VOUT is output voltage of the second power supply V2 at the moment;

the voltage of VOUT will jump back and forth between 0V-10V-0V quickly by repeating the above steps, and the jump slope can be regulated by the rising and falling time set by the signal generator.

It should be noted that, when the voltage is switched in a narrower range, the high voltage may be discharged through the second power V2, which may damage the common single-quadrant power supply device. Here, the dual-quadrant power supply can be selected as the second power supply according to actual needs.

Example 2

Unlike embodiment 1, this embodiment provides a level shift module for increasing the input voltage range to a desired voltage range, thereby achieving a wide range of voltage/current output.

Considering that when high voltage jumps to low voltage, high output voltage or electric current can not be released fast and can influence low voltage jump stability, and the leakage current flows into the second power supply and can lead to the inside damage of power, therefore, this embodiment has still set up the module of releasing and has prevented reverse the module, realizes the quick release of high voltage high current through the module of releasing, prevents through preventing reverse the module that the leakage current flows into the second power supply inside.

A transient test circuit block diagram including a high side switch, a low side switch, a level shifting module, a bleeding module, and an anti-reflection module is shown in fig. 3.

The level transfer module can be realized by adopting a resistor+NPN triode, a resistor+PNP triode or a resistor+P MOS tube, and the like, and is only exemplified by the resistor+P MOS tube, and the level transfer module is not used for limiting the protection scope of the invention.

The discharging module can be realized by adopting a high-capacity electrolytic capacitor, a pure power resistor or an MOS tube and the like, and aims to quickly reduce output voltage or current and realize quick switching of the voltage or the current. The capacitor C1 is only illustrated as being connected in parallel with the resistor R1, and is not intended to limit the scope of the present invention.

The anti-reflection module can be realized by adopting devices such as a common diode or an MOS tube, and the anti-reflection module aims to prevent reverse current from flowing into the power supply and avoid the problem that the power supply equipment is damaged due to the fact that the discharge current flows into the second power supply. The diode D1 is only used for illustration, and is not used for limiting the protection scope of the invention.

As shown in fig. 2, the level shift module is composed of a MOS transistor Q1 and a resistor R3, where a gate of the MOS transistor Q1 is connected to a signal generator, a source is grounded, and a drain is connected to the resistor R3 and a cathode of a zener diode Z1. The other end of the resistor R3 is also connected with a first power supply V1.

Furthermore, the Q1 is an N-channel MOS tube, the drain electrode serial resistor R3 of the N-channel MOS tube is connected to the first power supply V1 to realize level conversion, and the problem of lower output voltage capability of the signal generator is solved by the partial circuit. The highest output voltage of the common signal generator is only 10V, which is insufficient to drive the later-stage MOS transistor Q3, and the drain output voltage of the MOS transistor Q1 can reach the voltage of the first power supply V1 through the level shift module.

The high-side switch consists of a triode Q2 and a current limiting resistor R2. Q2 is PNP triode, its projecting pole is connected with first power V1 directly, and base series current-limiting resistor R2 is connected to MOS pipe Q1's drain electrode output, controls triode Q2's base electric current. The triode Q2 and the current limiting resistor R2 control the on and off of the high voltage V1.

The low-side switch consists of a MOS tube Q3 and a voltage stabilizing diode Z1. Q3 is an N-type channel MOS tube, and the grid electrode of the N-type channel MOS tube and the anode of the zener diode Z1 are connected in series to the drain electrode of the MOS tube Q1. The zener diode Z1 is used to reduce the gate driving voltage of the MOS transistor Q3, and prevent the gate overvoltage of the MOS transistor Q3 from being damaged. The combination of the MOS transistor Q3 and the zener diode Z1 is used for controlling the on and off of the low voltage V2.

The collector of the triode Q2 is connected with the drain of the MOS tube Q3 to form an output end VOUT of the circuit, and the output end VOUT is used for being connected with a tested product to provide a jump voltage with high rising and falling slopes for the tested product.

The anti-reflection module consists of a diode D1, and the source electrode of the MOS tube Q3 is connected with the diode D1 in the reverse direction to a second power supply V2. The diode D1 is a Schottky diode, has low voltage drop and rapid switching characteristics, and prevents the risk of damaging the power supply caused by the fact that the discharge current of the tested device flows into the second power supply V2 when the high voltage and the low voltage are rapidly switched.

The discharging module consists of a capacitor C1 and a resistor R1, the second power supply V2 is connected with the capacitor C1 in parallel, a rapid discharging path is provided for the voltage of VOUT, the resistor R1 is connected with the two ends of the capacitor C1 in parallel at the same time, excessive energy absorbed by the capacitor C1 is consumed to cause voltage rising, and the stability of low jump voltage is ensured.

The working principle of the embodiment is as follows:

(1) And acquiring the rising and falling slope requirements of a voltage jump range (such as 5V-60V-5V) required to be generated and a signal generator.

(2) The first power supply V1 is set to be 60V which is high in voltage and needs to be hopped, the second power supply V2 is set to be 5V which is low in voltage and needs to be hopped, and the first power supply V1 and the second power supply V2 are started.

(3) The signal generator is set to generate a square wave voltage signal of 0-10V, the rising and falling slopes can be adjusted to be 100us, and the signal generator is started.

(4) When the voltage output by the signal generator is 0V, the MOS transistor Q1 is in an off state, the 60V voltage of the first power supply V1 generates 60V voltage at the drain electrode of the MOS transistor Q1 through the resistor R3, and the 60V voltage is applied to the emitting electrode of the triode Q2 by the first power supply V1, and the 60V voltage is also applied to the base electrode of the triode Q2, so that the triode Q2 works in an off region and is in an off state, namely the high-side switch is turned off; the 60V voltage generated on the drain electrode of the MOS tube Q1 is reduced to about 20V through the voltage stabilizing diode Z1 and then is applied to the grid electrode of the MOS tube Q3, and as the source electrode of the MOS tube Q3 is applied with 5V voltage by the second power supply V2, the VGS voltage of the MOS tube Q3 is about 15V, the MOS tube Q3 is in a conducting state, and the low-side switch is conducted; the second power supply V2 outputs the voltage to the tested device through the conducted MOS transistor Q3 to VOUT, and VOUT is 5V output voltage at the moment.

(5) When the output voltage signal of the signal generator jumps from 0V to 10V, 10V voltage is applied between the grid electrode and the source electrode of the MOS tube Q1, the MOS tube Q1 is switched to a conducting state, the voltage of the drain electrode of the MOS tube Q1 is rapidly reduced to 0V, the grid voltage of the MOS tube Q3 is rapidly reduced to be close to 0V through the forward conducting zener diode Z1 and the conducting MOS tube Q1, and the MOS tube Q3 is rapidly turned off, namely the low-side switch is turned off; meanwhile, the voltage of the base electrode of the triode Q2 also drops rapidly, the emitter electrode of the triode Q2 always has 60V voltage applied by the first power supply V1, the 60V voltage generates current at the base electrode of the triode Q2 through the base electrode, the emitter electrode and the current limiting resistor R2 of the triode Q2, the triode Q2 is switched to a saturation region rapidly to work, the triode Q2 is conducted, namely, a high-side switch is conducted, the first power supply V1 supplies power to tested equipment through the triode Q2, and the VOUT voltage is 60V at the moment.

(6) When the voltage of the signal generator is switched to 0V again, the MOS transistor Q1 is cut off, the drain voltage of the MOS transistor Q1 starts to rise, and the triode Q2 is cut off rapidly, namely the high-side switch is cut off rapidly; the MOS transistor Q3 is turned on again, i.e. the low side switch is turned on rapidly. The voltage of 60V of VOUT will be discharged through MOS pipe Q3, because zener diode D1 is in reverse off state, the bleeder current that produces can not flow into the inside risk that produces the damage power of power through second power V2 this moment, and only can discharge rapidly through MOS pipe Q3 and give electric capacity C1, and the capacity of electric capacity C1 can select to be than the parasitic capacitance of VOUT more than several tens times, and the voltage of electric capacity C1 will not rise obviously like this to can discharge through resistance R1.

(7) By repeating the steps, the voltage of VOUT can jump back and forth between 5V and 60V and 5V rapidly, and the jump slope can be regulated by the rising and falling time set by the signal generator. Through simulation and experimental tests, as shown in fig. 4, voltage jump in the voltage range of 0-100V and the output current range of 0-10A can be realized, and the rising and falling rate of the voltage can reach tens of V/us at the highest.

In FIG. 4, VIN is a 1-10V transition voltage waveform; when VOUT_1mA is output load 1mA, the output voltage is circularly changed from 5V to 100V to 5V to the waveform, and the rising slope can reach 3.07us; when VOUT_10A is output load 10A, the output voltage is cyclically changed from 5V to 100V to 5V to the waveform, and the rising slope can reach 3.05us.

By way of illustration only, typical models and parameters of the devices involved in this embodiment may be as follows: a typical model of Q1 is FDT86246; a typical model of Q2 is MJ15004G; a typical model of Q3 is BSC190N12NS3-G; typical model of D1 is STPS60150CT; r3 has a resistance of 10KΩ; the resistance value of R2 is 100 omega; c1 has a capacity of 1000uF.

Example 3

Unlike embodiment 2, the transient test circuit of this embodiment includes only a level shift module, a high-side switch, and a low-side switch, and uses a double-limit dc power supply as the second power supply V2, thereby eliminating the bleeder module and the anti-reflection module.

As shown in fig. 5, the level shift module is composed of a MOS transistor Q1 and a resistor R3, where a gate of the MOS transistor Q1 is connected to a signal generator, a source is grounded, and a drain is connected to the resistor R3 and a cathode of a zener diode Z1. The other end of the resistor R3 is also connected with a first power supply V1.

When the high voltage is switched to the low voltage, the 60V voltage of VOUT is discharged through the MOS transistor Q3, and the discharged current directly enters the second power supply because the second power supply V2 supports the current to flow into the equipment.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced with equivalents; these modifications or substitutions do not depart from the essence of the corresponding technical solutions from the technical solutions of the embodiments of the present invention.

Claims

1. The transient test circuit for realizing rapid jump of input voltage is characterized by comprising a jump unit consisting of a high-side switch and a low-side switch; when the input end of the hopping unit inputs high voltage, the low-side switch is turned off, the high-side switch is turned on, and a first power supply communicated with the high-side switch provides high hopping voltage to the output end of the hopping unit; when the input end of the hopping unit inputs low voltage, the high-side switch is turned off, the low-side switch is turned on, and a second power supply communicated with the low-side switch provides low hopping voltage to the output end of the hopping unit.

2. The transient test circuit for realizing rapid jump of input voltage according to claim 1, wherein the high-side switch comprises a triode and a current limiting resistor, and the low-side switch comprises a MOS tube; the emitter of the triode is connected with a first power supply, and the base of the triode is connected with a current-limiting resistor; the source electrode of the MOS tube is connected with a second power supply, and the grid electrode of the MOS tube is connected with the current limiting resistor at the input end of the jumping unit; and the collector electrode of the triode and the drain electrode of the MOS light are connected to the output end of the hopping unit.

3. The transient test circuit for realizing rapid jump of input voltage according to claim 1, further comprising a level shifting module, disposed at an input end of the jump unit, for increasing the input voltage range to a preset voltage range.

4. A transient test circuit for implementing rapid jump of input voltage according to claim 3, wherein in the transient test circuit provided with level shifting module, said low side switch comprises MOS transistor and zener diode, and said high side switch comprises triode and current limiting resistor.

5. The transient test circuit for realizing rapid jump of input voltage according to claim 3, wherein the level transfer module is realized by adopting a mode of combining a resistor with a triode or combining a resistor with a MOS tube.

6. A transient test circuit for implementing rapid transitions in input voltage as claimed in claim 3 further comprising a bleed module at an output of said transition unit for bleeding high transition voltage generated by high side switch turn-on when switching from high side switch turn-on to low side switch turn-on.

7. The transient test circuit for realizing rapid jump of input voltage according to claim 6, wherein the bleeder module comprises a high-capacity electrolytic capacitor, a pure power resistor or a MOS tube.

8. A transient test circuit for implementing a rapid jump in an input voltage according to claim 3, further comprising an anti-reflection module between said low side switch and the second power supply for preventing a bleed current at the output terminal from flowing into the second power supply during a rapid high-low voltage switching.

9. The transient test circuit for realizing rapid jump of input voltage according to claim 8, wherein the anti-reverse module comprises a diode or a MOS tube.

10. A transient test circuit for enabling rapid transitions in input voltage as claimed in claim 3 wherein said second power supply is a dual-quadrant dc power supply.