CN112072898B - NMOS power tube grid clamping driving module, driving circuit and switching power supply - Google Patents
NMOS power tube grid clamping driving module, driving circuit and switching power supply Download PDFInfo
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- CN112072898B CN112072898B CN202011255119.5A CN202011255119A CN112072898B CN 112072898 B CN112072898 B CN 112072898B CN 202011255119 A CN202011255119 A CN 202011255119A CN 112072898 B CN112072898 B CN 112072898B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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Abstract
The invention provides an NMOS power tube grid clamping driving module, a driving circuit and a switching power supply, wherein the NMOS power tube grid clamping driving module comprises a BOOST capacitor charging module, a reference current source module, a level transfer module and a power tube driving module and is realized by adopting a transistor integrated circuit process. The NMOS drive function with complete functions can be realized by fewer transistors, the NMOS drive circuit has the characteristics of simple structure, low cost and high reliability, and each device in the transistor process is isolated from each other, so the circuit has good latch-up resistance and interference resistance, and is suitable for a high-voltage high-power switching power supply.
Description
Technical Field
The invention relates to the field of switching power supplies, in particular to an NMOS power tube grid clamping driving module, a switching power supply driving circuit and a switching power supply.
Background
The power tube inside the switching power supply chip has two types, namely a power triode and a power MOS tube, the power MOS tube is divided into a PMOS power tube and an NMOS power tube, and due to the fact that most of current carriers are different when the power tube works inside the power tube, the NMOS power tube is smaller in on-resistance under the same unit area compared with the PMOS power tube, namely the performance of the NMOS power tube is relatively better, and therefore the application prospect of the NMOS power tube is wider.
A common switching power supply chip can be divided into a voltage reduction chip and a voltage boosting chip according to different internal structures, if an NMOS power tube is selected as a power tube inside the voltage reduction chip, an external BOOST capacitor is generally selected to provide a stable power supply for a driving circuit, and a capacitor charging circuit is arranged inside the chip. In a switching power supply chip based on a CMOS (complementary metal oxide semiconductor) process, because the MOS is higher in parasitic capacitance and the MOS device is not completely isolated, the circuit design consideration inside the chip is more, and the whole driving circuit is large in scale and high in cost.
Disclosure of Invention
The invention provides an NMOS power tube grid clamping driving module, a switch power supply driving circuit and a switch power supply in order to overcome the defects of the prior art, wherein the NMOS power tube grid clamping driving module is realized by adopting a transistor integrated circuit process, can realize an NMOS driving function with complete functions by using fewer transistors, and has the characteristics of simple structure, low cost and high reliability.
In order to achieve the above object, an embodiment of the present invention provides an NMOS power transistor gate clamp driving module, including: the BOOST circuit comprises a BOOST capacitor charging module, a reference current source module, a level transfer module and a power tube driving module, wherein the BOOST capacitor charging module, the reference current source module, the level transfer module and the power tube driving module are realized by adopting a transistor integrated circuit process; the input end of the BOOST capacitor charging module comprises a VREF control signal end and an ON control signal end, the output end of the BOOST capacitor charging module is connected with the BS signal output end of the power tube driving module, and a first control signal of the ON control signal end and the reference voltage of the VREF control signal end are used for charging the BOOST capacitor of the driving circuit externally connected with the BS signal output end; the output end of the reference current source module is connected with the first input end of the power tube driving module and provides bias current for the current mirror of the power tube driving module; the input end of the level transfer module comprises a PWM control signal end, and a second control signal is generated after the PWM signal is subjected to level transfer and serves as an input control signal of the power tube driving module; the output end of the power tube driving module comprises a BS signal output end, a GATE signal output end and a SW signal output end, and the output signal of the GATE signal output end is controlled by obtaining the bias current of the reference current source module and the second control signal of the level transfer module, so that the on and off of an NMOS power tube externally connected with the GATE signal output end are controlled.
Optionally, the output end of the BOOST capacitor charging module is connected to the power input end of the reference current source module, the power input end of the level transfer module, and the power input end of the power tube driving module.
Optionally, the BOOST capacitor charging module includes: triodes Q1, Q2, Q3, Q4, Q5, Q6, a resistor R1 and a voltage-stabilizing tube DZ1, wherein emitting electrodes of the triodes Q1 and Q3 are connected with a VCC input voltage end, bases of the triodes Q1 and Q3 are connected, a collector electrode of the triode Q1 and a collector electrode of the triode Q2 are connected, a base electrode of the triode Q2 is connected with a VREF control signal end, an emitting electrode of the triode Q2 is connected with one end of the resistor R1, and the other end of the resistor R1 is grounded; a collector of the triode Q3 is connected with a base of the triode Q5, a first end of a voltage regulator tube DZ1 and a collector of the triode Q4, a base of the triode Q4 is connected with an ON control signal end, and an emitter of the triode Q4 is grounded; the second end of the voltage regulator tube DZ1 is grounded; the collector of triode Q5 links to each other with VCC input voltage end, the projecting pole of triode Q5 links to each other with the input of one-way conduction device, the output of one-way conduction device is as the output of BOOST electric capacity module of charging.
Optionally, the unidirectional device is a diode or a triode, and when the unidirectional device is a triode, an emitter of the triode is used as an input end, and a base and a collector of the triode are connected to be used as an output end.
Optionally, the reference current source module includes a transistor Q7, a transistor Q8, a resistor R2, a resistor R3, a diode D1, and a resistor D2, one end of the resistor R2 and an emitter of the transistor Q7 are connected to an output end of the BOOST capacitor charging module, the other end of the resistor R2 is connected to a base of the transistor Q8 and one end of the diodes D1 and D2 connected in series, the other end of the diodes D1 and D2 connected in series is connected to a SW signal output end of the power tube driving module, a base of the transistor Q7 is used as an output end of the reference current source module and is connected to the power tube driving module, a base and a collector of the transistor Q7 are connected to a collector of the transistor Q8, an emitter of the transistor Q8 is connected to one end of the resistor R3, and the other end of the resistor R3 is connected to a SW signal output end of the power.
Optionally, the level shift module includes: triodes Q9, Q10, Q11, Q12 and a resistor R4, the emitting electrodes of triodes Q9 and Q11 are connected and are connected with the BS signal output end, the bases of triodes Q9 and Q11 are connected and are connected with the collector electrode of the triode Q9 and the collector electrode of the triode Q10, the emitting electrode of the triode Q10 is grounded, the base electrode of the triode Q10, the base electrode of the triode Q12 and the collector electrode are connected and are connected with the PWM control signal end, the emitting electrode of the triode Q12 is grounded, the collector electrode of the triode Q11 is connected with one end of a resistor R4 and serves as the output end of the level shift module, and the other end of the resistor R4 is connected with the SW signal output end of the power tube driving module.
Optionally, the power transistor driving module includes transistors Q13, Q14, Q15, Q16, Q17, Q18, Q19, Q20, Q21, Q22, Q23, Q24, resistors R5, R6, R7, and R8, emitters of the transistors Q13, Q15, Q17, Q19, and Q21 are connected to the BS signal output terminal of the power transistor driving module, bases of the transistors Q13, Q15, Q17, Q19, Q21 are connected to the output terminal of the reference current source module as a first input terminal of the power transistor driving module, a collector of the transistor Q21 is connected to a collector of the transistor Q21, a base of the transistor Q21 is connected to the output terminal of the level shift module as a second input terminal of the power transistor driving module, a collector of the transistor Q21 is connected to a collector of the transistor Q21, a resistor R21, a collector of the transistor R21, a base of the transistor R21 is connected to the transistor 21, and a base of the transistor R21, the collector of the triode Q17, the collector of the triode Q18 and the base of the triode Q22 are connected, the other end of the resistor R7 is connected with the base of the triode Q20, the collector of the triode Q19, the collector of the triode Q20 and the base of the triode Q24 are connected, the collector of the triode Q21, the collector of the triode Q22 and the base of the triode Q23 are connected, the collector of the triode Q23 is connected with the output end of the BOOST capacitor charging module, the emitter of the triode Q23 is connected with one end of the collector of the triode Q24 and the resistor R8 and serves as the GATE signal output end of the power tube driving module, and the emitters of the triodes Q14, Q16, Q18, Q20, Q22 and Q24 and the other ends of the resistors R6 and R8 are connected and connected with the SW signal output end of the power tube driving module.
The embodiment of the present invention further provides a switching power supply driving circuit, including: the grid clamping driving circuit comprises an NMOS power tube, a BOOST capacitor and the NMOS power tube grid clamping driving module, wherein one end of the BOOST capacitor is connected with a BS signal output end of the NMOS power tube grid clamping driving module, the other end of the BOOST capacitor is connected with a SW signal output end of the NMOS power tube grid clamping driving module and is connected with a source electrode of the NMOS power tube, a grid of the NMOS power tube is connected with a GATE signal output end of the NMOS power tube grid clamping driving module, and a drain electrode of the NMOS power tube is connected with a VCC input voltage end of the NMOS power tube grid clamping driving module.
The embodiment of the invention also provides a switching power supply which comprises the switching power supply driving circuit.
In conclusion, the beneficial effects of the invention are as follows:
the NMOS power tube grid clamping driving module is realized by adopting a transistor integrated circuit process, can realize the NMOS driving function with complete functions by using fewer transistors, has the characteristics of simple structure, low cost and high reliability, and has good latch-up resistance and interference resistance because each device in the transistor process is mutually isolated, thereby being suitable for a high-voltage high-power switching power supply.
In order to make the aforementioned and other objects, features and advantages of the invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a schematic structural diagram of a switching power supply according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a gate clamping driving module of an NMOS power transistor according to an embodiment of the present invention;
FIG. 3 shows waveforms according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below with reference to specific examples in order to facilitate understanding by those skilled in the art.
Referring to fig. 1, a switching power supply according to an embodiment of the present invention includes a power circuit 20, an output circuit 30, and a switching power supply driving circuit 10. One end of the switching power supply driving circuit 10 is connected to the power supply circuit 20, and the other end of the switching power supply driving circuit 10 is connected to the output circuit 30.
In this embodiment, the power circuit 20 includes an input dc power VCC and an input filter capacitor C1 connected in parallel. The input direct current power supply VCC of the embodiment of the invention can be direct current voltage within the range of 4.5V-90V. The switching power supply driving circuit has good latch-up resistance and interference resistance, so the switching power supply driving circuit is suitable for high-voltage high-power switching power supplies.
The output circuit 30 comprises a schottky diode D3, a power inductor L1, an output filter capacitor C3 and a load R, wherein a cathode of the schottky diode D3 is connected with a source of an NMOS power tube Q25 and one end of the power inductor L1, the other end of the power inductor L1 is connected with one end of the output filter capacitor C3 and one end of the load R, and an anode of the schottky diode D3, the other end of the output filter capacitor C3 and the other end of the load R are grounded.
The switching power supply drive circuit 10 includes: the power supply circuit comprises an NMOS power tube Q25, a BOOST capacitor C2 and an NMOS power tube grid clamping driving module U1, wherein one end of the BOOST capacitor C2 is connected with a BS signal output end of the NMOS power tube grid clamping driving module U1, the other end of the BOOST capacitor C2 is connected with a SW signal output end of the NMOS power tube grid clamping driving module U1, a source electrode of the NMOS power tube Q25, a cathode of a Schottky diode D3 and one end of a power inductor L1, a grid electrode of the NMOS power tube Q25 is connected with a GATE signal output end of the NMOS power tube grid clamping driving module U1, and a drain electrode of the NMOS power tube Q25 is connected with a VCC input voltage end of the NMOS power tube grid clamping driving module U1 and is connected with an input direct current power supply VCC.
In the embodiment of the present invention, the power circuit 20 and the output circuit 30 are only one implementation manner of a switch circuit, and a person skilled in the art may select different power circuits and output circuits as needed, which is not described herein again.
In the embodiment of the present invention, referring to fig. 2, the NMOS power transistor gate clamp driving module includes a BOOST capacitor charging module 11, a reference current source module 12, a level shift module 13, and a power transistor driving module 14, and the BOOST capacitor charging module, the reference current source module, the level shift module, and the power transistor driving module are implemented by using a transistor integrated circuit process. Compared with a traditional switching power supply chip of a CMOS (complementary metal oxide semiconductor) process, the high parasitic capacitance of the MOS device and the incomplete isolation of the MOS device are avoided, the circuit design inside the chip is more considered, and the whole driving circuit is large in scale and high in cost. However, the switching power supply chip of the invention, namely the NMOS power tube grid clamping driving module U1, is realized by adopting a high-voltage transistor integrated circuit process, can realize the NMOS driving switching power supply chip with complete functions by using fewer transistors, has the characteristics of simple structure, low cost and high reliability, and has good latch-up resistance and anti-interference capability because each device in the high-voltage transistor process is mutually isolated, thereby being suitable for a high-voltage high-power switching power supply.
In this embodiment, the input end of the BOOST capacitor charging module 11 includes a VREF control signal end, an ON control signal end and a VCC input voltage end, the output end of the BOOST capacitor charging module 11 is connected to the BS signal output end of the power tube driving module 14 and is connected to the power input end of the reference current source module 12, the power input end of the level shift module 13 and the power input end of the power tube driving module 14, and the BOOST capacitor of the driving circuit externally connected to the BS signal output port is charged by using the first control signal of the ON control signal end and the reference voltage of the VREF control signal end; the output end of the reference current source module 12 is connected with the first input end of the power tube driving module 14, and provides bias current for the current mirror of the power tube driving module; the input end of the level shift module 13 includes a PWM control signal end, and generates a second control signal after the PWM signal is subjected to level shift, where the second control signal is used as an input control signal of the power tube driving module 14; the output end of the power tube driving module 14 includes a BS signal output end, a GATE signal output end and a SW signal output end, and the output signal of the GATE signal output end is controlled by obtaining the bias current of the reference current source module 12 and the second control signal of the level shift module 13, so as to control the on and off of an NMOS power tube externally connected to the GATE signal output end.
Specifically, in this embodiment, the BOOST capacitor charging module 11 includes: triodes Q1, Q2, Q3, Q4, Q5, Q6, a resistor R1 and a voltage-stabilizing tube DZ1, wherein emitting electrodes of the triodes Q1 and Q3 are connected with a VCC input voltage end, bases of the triodes Q1 and Q3 are connected, a collector electrode of the triode Q1 and a collector electrode of the triode Q2 are connected, a base electrode of the triode Q2 is connected with a VREF control signal end, an emitting electrode of the triode Q2 is connected with one end of the resistor R1, and the other end of the resistor R1 is grounded; a collector of the triode Q3 is connected with a base of the triode Q5, a first end of a voltage regulator tube DZ1 and a collector of the triode Q4, a base of the triode Q4 is connected with an ON control signal end, and an emitter of the triode Q4 is grounded; the second end of the voltage regulator tube DZ1 is grounded; the collector of triode Q5 links to each other with VCC input voltage end, the projecting pole of triode Q5 links to each other with the input of one-way conduction device, the output of one-way conduction device is as the output of BOOST electric capacity module of charging.
In this embodiment, the unidirectional conducting device is a triode, an emitter of the triode is used as an input terminal to be connected with an emitter of the triode Q5, and a base and a collector of the triode are connected to be used as an output terminal of the BOOST capacitor charging module. Because the voltage input end of the BOOST capacitor charging module 11 is VCC, the output end is connected with the BS signal output end, the BS signal output end is connected with the BOOST capacitor, the BS signal output end can be higher than VCC in the working process, the voltage backflow is caused, the BOOST capacitor charging module 11 is easily damaged, and therefore the BOOST capacitor charging module can play a role in preventing backflow through the arrangement of the triode Q6 in a one-way conduction mode.
In other embodiments, the unidirectional conducting device may also be a unidirectional conducting device such as a diode.
In this embodiment, the reference current source module 12 includes a transistor Q7, a transistor Q8, a resistor R2, a transistor R3, a diode D1, and a resistor D2, one end of the resistor R2 and an emitter of the transistor Q7 are connected to an output terminal of the BOOST capacitor charging module, the other end of the resistor R2 is connected to a base of the transistor Q8 and one end of the series-connected diodes D1 and D2, the other end of the series-connected diodes D1 and D2 is connected to a SW signal output terminal of the power tube driving module, a base of the transistor Q7 is connected to the power tube driving module as the output terminal of the reference current source module, a base and a collector of the transistor Q7 are connected to a collector of the transistor Q8, an emitter of the transistor Q8 is connected to one end of the resistor R3, and the other end of the resistor R3 is connected to the SW signal output terminal of the power tube driving module.
In this embodiment, the level shift module 13 includes: triodes Q9, Q10, Q11, Q12 and a resistor R4, the emitting electrodes of triodes Q9 and Q11 are connected and are connected with the BS signal output end, the bases of triodes Q9 and Q11 are connected and are connected with the collector electrode of the triode Q9 and the collector electrode of the triode Q10, the emitting electrode of the triode Q10 is grounded, the base electrode of the triode Q10 and the base electrode and the collector electrode of the triode Q12 are connected and are connected with the PWM control signal end, the emitting electrode of the triode Q12 is grounded, the collector electrode of the triode Q11 is connected with one end of a resistor R4 and is used as the output end of the level shift module, and the other end of the resistor R4 is connected with the SW signal output end of the power tube driving module.
In this embodiment, the power transistor driving module 14 includes transistors Q13, Q14, Q15, Q16, Q17, Q18, Q19, Q20, Q21, Q22, Q23, Q24, resistors R5, R6, R7, and R8, emitters of the transistors Q13, Q15, Q17, Q19, and Q21 are connected to the BS signal output terminal of the power transistor driving module, bases of the transistors Q13, Q15, Q17, Q19, and Q21 are connected to the output terminal of the reference current source module as a first input terminal of the power transistor driving module, a collector of the transistor Q21 is connected to a collector of the transistor Q21, a base of the transistor Q21 is connected to the output terminal of the level shift module as a second input terminal of the power transistor Q21, a collector of the transistor Q21 is connected to a collector of the transistor R21, a resistor R21, a collector of the transistor R21 is connected to the other terminal of the transistor 21, the collector of the triode Q17, the collector of the triode Q18 and the base of the triode Q22 are connected, the other end of the resistor R7 is connected with the base of the triode Q20, the collector of the triode Q19, the collector of the triode Q20 and the base of the triode Q24 are connected, the collector of the triode Q21, the collector of the triode Q22 and the base of the triode Q23 are connected, the collector of the triode Q23 is connected with the BS signal output end, the emitter of the triode Q23 is connected with the collector of the triode Q24 and one end of the resistor R8 and serves as the GATE signal output end of the power tube driving module, and the emitters of the triodes Q14, Q16, Q18, Q20, Q22, Q24 and the other ends of the resistors R6 and R8 are connected and connected with the SW signal output end of the power tube driving module.
The working principle of the invention patent is as follows:
when the ON control signal end of the BOOST capacitor charging module 11 is at a low level, the triode Q4 is turned off, the current of the triode Q3 establishes a clamping voltage through the voltage regulator tube DZ1, the VBE voltage of the triode Q5 is established at this time, the triode Q5 is turned ON, and the current charges the BOOST capacitor C2 through the signal output end of the BS through the triode Q6; the maximum value of the voltage of the upper electrode plate of the BOOST capacitor C2, namely the voltage of the BS signal output end, is VDZ1-VBE-VEB (wherein VDZ1 is the breakdown voltage of a voltage regulator tube, VBE is the conduction voltage of the triode Q5, and VEB is the conduction voltage drop of a diode corresponding to the triode Q6), and the triode Q6 plays a role in preventing backflow. The breakdown voltage of the voltage regulator tube DZ1 can be changed by adjusting process parameters, in the embodiment, the breakdown voltage of the voltage regulator tube DZ1 is designed to be 8.2V, the VBE of the NPN transistor and the VEB of the PNP transistor are both around 0.7V, and the maximum voltage difference between the BS signal output end and the SW signal output end in the application is 6.8V.
The reference current source module 12 provides a bias current for the current mirror of the power transistor driving module 14. The current through transistors Q7, Q8, R3 is determined by the voltage drop across diodes D1, D2, the VBE turn-on voltage of transistor Q8, and the voltage across the R3 resistor.
When the PWM signal at the PWM control signal terminal is high, the VBE voltages of the transistors Q12 and Q10 of the level shift module 13 are established, and at this time, the VBE voltages of the transistors Q9 and Q11 are established, after the transistor Q11 is turned on, the current flows through the base of the R4 and the transistor Q14, the VBE voltage of the transistor Q14 is established, and the transistor Q14 is turned on. When the PWM signal is low, the VBE voltage of the transistors Q12, Q10 of the level shift module 13 is 0. The transistors Q10, Q12 are turned off, at which time the transistors Q9, Q11 are also turned off. The base voltage of transistor Q14 is pulled down to SW by R4, the VBE voltage of transistor Q14 is 0V, and transistor Q14 is turned off.
When the PWM signal is high, the transistor Q14 of the power transistor driving module 14 is turned on, the transistor Q16 is turned off, the transistors Q18 and Q20 are turned on, the transistors Q22 and Q24 are turned off, and the transistor Q23 is turned on, at this time, the BOOST capacitor C2 loads voltage to the gate and the source of the NMOS power transistor Q25 through the transistor Q23, a voltage difference exists between the gate and the source of the NMOS power transistor Q25, and the power transistor is turned on.
Since the NMOS power transistor Q25 is connected to the SW signal output terminal, the voltage at the SW signal output terminal will be raised to VCC power supply voltage after the NMOS power transistor is turned on (the voltage drop of the NMOS transistor is ignored here), and since the voltage difference of the BOOST capacitor C2 will not change suddenly, the voltage at the BS signal output terminal will also be raised to VCC + VC2 (VC 2 is the voltage of the BOOST capacitor C2). Due to the existence of the BOOST capacitor C2, a stable voltage difference (the difference is equal to VC 2) is ensured to exist between the BS and the SW all the time in the process, namely, a stable voltage difference always exists between the grid source and the grid source of the NMOS power tube, and the power tube can be ensured to be always conducted. The triode Q6 of the BOOST capacitor charging module 11 is a high-voltage PNP transistor, and in the transistor integrated circuit process, the forward conduction voltage is 0.7V, and the reverse breakdown voltage is process withstand voltage, and plays a role in preventing charge from flowing backwards.
When the PWM signal is low, the triode Q14 is turned off, the triode Q16 is turned on, the triodes Q18 and Q20 are turned off, the triodes Q22 and Q24 are turned on, the triode Q23 is turned off, at the moment, the emitter of the triode Q24 is short-circuited to the SW signal output end, the voltage difference between the grid and the source of the NMOS power tube is 0V, and the NMOS power tube is turned off.
Please refer to fig. 3, which is a waveform diagram according to an embodiment of the present invention. The waveforms shown in FIG. 3 are VCC, VREF, ON, BS, PWM, GATE, and SW, in this order from top to bottom.
When the ON signal goes low, the capacitor begins to charge and a voltage differential is established between BS and SW. PWM is a square wave signal of fixed frequency and duty cycle. When the PWM signal is high, the NMOS power tube is turned on. The BS and SW signals are driven high (their differential pressure remains constant). When the PWM signal is low, the power tube is turned off. It can be seen that the whole system has normal functional logic and can be used as an NMOS power tube driving circuit in a switching power supply circuit.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (9)
1. An NMOS power tube grid clamping driving module, which is characterized in that the driving module comprises: the BOOST circuit comprises a BOOST capacitor charging module, a reference current source module, a level transfer module and a power tube driving module, wherein the BOOST capacitor charging module, the reference current source module, the level transfer module and the power tube driving module are realized by adopting a transistor integrated circuit process; the input end of the BOOST capacitor charging module comprises a VREF control signal end and an ON control signal end, the output end of the BOOST capacitor charging module is connected with the BS signal output end of the power tube driving module, and a first control signal of the ON control signal end and the reference voltage of the VREF control signal end are used for charging the BOOST capacitor of a driving circuit externally connected with the BS signal output end; the output end of the reference current source module is connected with the first input end of the power tube driving module and provides bias current for the current mirror of the power tube driving module; the input end of the level transfer module comprises a PWM control signal end, and a second control signal is generated after the PWM signal is subjected to level transfer and serves as an input control signal of the power tube driving module; the output end of the power tube driving module comprises a BS signal output end, a GATE signal output end and a SW signal output end, and the output signal of the GATE signal output end is controlled by obtaining the bias current of the reference current source module and the second control signal of the level transfer module, so that the on and off of an NMOS power tube externally connected with the GATE signal output end are controlled.
2. The NMOS power transistor gate clamp driver module of claim 1 wherein the output of said BOOST capacitor charging module is connected to the power input of the reference current source module, the power input of the level shifter module, and the power input of the power transistor driver module.
3. The NMOS power tube gate clamp driver module of claim 1, wherein said BOOST capacitor charging module comprises: triodes Q1, Q2, Q3, Q4, Q5, a one-way conduction device, a resistor R1 and a voltage-regulator tube DZ1, wherein emitting electrodes of the triodes Q1 and Q3 are connected with a VCC input voltage end, bases of the triodes Q1 and Q3 are connected with a collector electrode of the triode Q1 and a collector electrode of the triode Q2, a base electrode of the triode Q2 is connected with a VREF control signal end, an emitting electrode of the triode Q2 is connected with one end of the resistor R1, and the other end of the resistor R1 is grounded; a collector of the triode Q3 is connected with a base of the triode Q5, a first end of a voltage regulator tube DZ1 and a collector of the triode Q4, a base of the triode Q4 is connected with an ON control signal end, and an emitter of the triode Q4 is grounded; the second end of the voltage regulator tube DZ1 is grounded; the collector of triode Q5 links to each other with VCC input voltage end, the projecting pole of triode Q5 links to each other with the input of one-way conduction device, the output of one-way conduction device is as the output of BOOST electric capacity module of charging.
4. The NMOS power transistor gate clamp driver module of claim 3 wherein said unidirectional conducting device is a diode or a transistor, and when said unidirectional conducting device is a transistor, the emitter of the transistor serves as the input terminal and the base and collector of the transistor are connected as the output terminal.
5. The NMOS power tube gate clamp driver module of claim 1, the reference current source module comprises a triode Q7, a Q8, resistors R2, R3, a diode D1 and a diode D2, one end of the resistor R2 and the emitter of the triode Q7 are connected with the output end of the BOOST capacitor charging module, the other end of the resistor R2 is connected with the base of the triode Q8 and one end of the diodes D1 and D2 which are connected in series, the other end of the diodes D1 and D2 which are connected in series is connected with the SW signal output end of the power tube driving module, the base electrode of the triode Q7 is used as the output end of the reference current source module and is connected with the power tube driving module, the base electrode and the collector electrode of the triode Q7 are connected and are connected with the collector electrode of the triode Q8, the emitter electrode of the triode Q8 is connected with one end of the resistor R3, and the other end of the resistor R3 is connected with the SW signal output end of the power tube driving module.
6. The NMOS power tube gate clamp driver module of claim 1, wherein said level shifter module comprises: triodes Q9, Q10, Q11, Q12 and a resistor R4, wherein emitting electrodes of the triodes Q9 and Q11 are connected and are connected with a BS signal output end, bases of the triodes Q9 and Q11 are connected and are connected with a collector electrode of the triode Q9 and a collector electrode of the triode Q10, an emitting electrode of the triode Q10 is grounded, a base electrode of the triode Q10, a base electrode of the triode Q12 and a collector electrode of the triode Q12 are connected and are connected with a PWM control signal end, an emitting electrode of the triode Q12 is grounded, a collector electrode of the triode Q11 is connected with one end of the resistor R4 and serves as an output end of the level shift module, and the other end of the resistor R4 is connected with a SW signal output end of the power tube driving module.
7. The NMOS power transistor gate clamp driver module of claim 1, wherein said power transistor driver module comprises a transistor Q13, Q14, Q15, Q16, a resistor R16, and R16, wherein an emitter of said transistor Q16, Q16 is connected to a BS signal output terminal of said power transistor driver module, a base of said transistor Q16, Q16 is connected to an output terminal of said reference current source module as a first input terminal of said power transistor driver module, a collector of said transistor Q16 is connected to a collector of said transistor Q16, a base of said transistor Q16 is connected to a second input terminal of said power transistor driver module, and a collector of said transistor Q16 is connected to a collector of said transistor Q16 One ends of the resistors R5, R6 and R7 are connected, the other end of the resistor R5 is connected with the base electrode of the triode Q18, the collector of the transistor Q17 and the collector of the transistor Q18 are connected with the base of the transistor Q22, the other end of the resistor R7 is connected with the base electrode of a triode Q20, the collector electrode of the triode Q19, the collector electrode of the triode Q20 and the base electrode of the triode Q24 are connected, the collector of the triode Q21, the collector of the triode Q22 and the base of the triode Q23 are connected, the collector of the transistor Q23 is connected to the BS signal output terminal, the emitter of the transistor Q23 is connected to the collector of the transistor Q24 and one end of the resistor R8 and serves as the GATE signal output terminal of the power tube driving module, and the emitters of the triodes Q14, Q16, Q18, Q20, Q22 and Q24 are connected with the other ends of the resistors R6 and R8 and are connected with the SW signal output end of the power tube driving module.
8. A switching power supply driving circuit, comprising: the GATE clamping driving circuit comprises an NMOS power tube, a BOOST capacitor and the GATE clamping driving module of the NMOS power tube as claimed in any one of claims 1 to 7, wherein one end of the BOOST capacitor is connected with a BS signal output end of the GATE clamping driving module of the NMOS power tube, the other end of the BOOST capacitor is connected with a SW signal output end of the GATE clamping driving module of the NMOS power tube and is connected with a source electrode of the NMOS power tube, a GATE of the NMOS power tube is connected with a GATE signal output end of the GATE clamping driving module of the NMOS power tube, and a drain of the NMOS power tube is connected with a VCC input voltage end of the GATE clamping driving module of the NMOS power tube.
9. A switching power supply characterized by comprising the switching power supply drive circuit according to claim 8.
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| CN113067464B (en) * | 2021-06-02 | 2021-08-24 | 上海芯龙半导体技术股份有限公司 | NMOS power tube grid driving module, driving circuit and switching power supply |
| CN113078804B (en) * | 2021-06-04 | 2021-08-24 | 上海芯龙半导体技术股份有限公司南京分公司 | Power tube driving circuit, power chip and power system |
| CN113535619A (en) * | 2021-06-30 | 2021-10-22 | 北京航天时代光电科技有限公司 | High-speed serial interface for satellite based on Virtex-5 series FPGA and TLK2711 |
| CN115528892B (en) * | 2022-11-28 | 2023-04-14 | 上海芯龙半导体技术股份有限公司 | NMOS power tube driving circuit, chip and system |
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| CN102790516A (en) * | 2012-08-02 | 2012-11-21 | 电子科技大学 | Feedback clamping power metal oxide semiconductor (MOS) pipe drive circuit for power supply management |
| CN108880254A (en) * | 2018-08-20 | 2018-11-23 | 电子科技大学 | A kind of pre-biased circuit applied to DC-DC converter |
| CN110244813A (en) * | 2019-07-15 | 2019-09-17 | 电子科技大学 | The grid driving current charging circuit and grid drive control circuit of power device |
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|---|---|---|---|---|
| CN102790516A (en) * | 2012-08-02 | 2012-11-21 | 电子科技大学 | Feedback clamping power metal oxide semiconductor (MOS) pipe drive circuit for power supply management |
| CN108880254A (en) * | 2018-08-20 | 2018-11-23 | 电子科技大学 | A kind of pre-biased circuit applied to DC-DC converter |
| CN110244813A (en) * | 2019-07-15 | 2019-09-17 | 电子科技大学 | The grid driving current charging circuit and grid drive control circuit of power device |
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