CN116445859A - Multi-layer metal layer evaporation device and evaporation method - Google Patents
Multi-layer metal layer evaporation device and evaporation method Download PDFInfo
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- CN116445859A CN116445859A CN202310431952.8A CN202310431952A CN116445859A CN 116445859 A CN116445859 A CN 116445859A CN 202310431952 A CN202310431952 A CN 202310431952A CN 116445859 A CN116445859 A CN 116445859A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 182
- 239000002184 metal Substances 0.000 title claims abstract description 182
- 238000001704 evaporation Methods 0.000 title claims abstract description 124
- 230000008020 evaporation Effects 0.000 title claims abstract description 112
- 238000000137 annealing Methods 0.000 claims abstract description 88
- 238000000034 method Methods 0.000 claims abstract description 59
- 230000005540 biological transmission Effects 0.000 claims abstract description 32
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000007740 vapor deposition Methods 0.000 claims description 51
- 238000010438 heat treatment Methods 0.000 claims description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 43
- 206010040844 Skin exfoliation Diseases 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 165
- 235000012431 wafers Nutrition 0.000 description 106
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 238000007747 plating Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010301 surface-oxidation reaction Methods 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical group [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a multi-layer metal layer evaporation device and an evaporation method. The multilayer metal layer evaporation device comprises: the transmission chamber, the arm that the transmission intracavity set up includes: the wafer annealing device comprises a wafer tray, an annealing assembly and an electrostatic chuck, wherein the annealing assembly is used for performing annealing, and the electrostatic chuck is used for adsorbing and fixing a wafer on the surface of the wafer tray; the evaporation cavity is positioned at one side of the transmission cavity and is used for performing front-stage evaporation on the wafer so as to form a first metal layer on the surface of the wafer by evaporation; the annealing component is used for annealing the wafer subjected to the front-stage evaporation so as to form a metal silicide layer between the first metal layer and the wafer; the evaporation cavity is also used for performing back-stage evaporation on the annealed wafer so as to form a second metal layer on the surface of the first metal layer by evaporation. By improving the device, the quality of the evaporation process is improved on the premise of not increasing the process cost, the adhesiveness between the metal layers and the wafer is increased, gaps among multiple metal layers are reduced, and the risk of peeling the metal layers is reduced.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a multilayer metal layer evaporation device and an evaporation method.
Background
The vapor deposition is a process method for evaporating and vaporizing a coating material (or film material) by a certain heating and evaporating mode under a vacuum condition, and allowing the vaporized particles to fly to the surface of a substrate to form a film by condensation. The vapor deposition technology is earlier and widely used, and compared with the sputtering technology, the vapor deposition technology has the advantages of simple film forming method, high purity and compactness of the film, unique film structure and performance and the like. Vapor deposition processes are typically used to connect semiconductor and metal layers so that subsequent packages can be wired or otherwise connected to copper sheets. Typical evaporation processes often require the deposition of multiple metal layers and are typically accomplished in a vacuum chamber.
Fig. 1 is a schematic structural diagram of an evaporation device in the prior art. As shown in fig. 1, the evaporation device comprises a process chamber 11, a crucible 12 and a slide tray 13. The process chamber 11 is internally provided with a plurality of crucibles 12, and different metal materials are placed in the crucibles 12. The slide tray 13 is located above the crucible 12, and can hold a plurality of silicon substrates. By sequentially heating the metal materials in the plurality of crucibles 12 and depositing the metal materials on the silicon substrate, the purpose of completing the deposition of the plurality of metal materials in one process chamber is achieved, and finally, the connection of the silicon substrate and the outside with low impedance is achieved. The evaporation device further comprises a vacuum pump 14 for providing a vacuum environment for the process chamber 11.
A typical back evaporation process of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT for short) sequentially deposits metal layers of aluminum, titanium, nickel, silver and the like on a silicon substrate by a method of exciting a metal target at a high temperature, wherein aluminum metal is directly deposited on the silicon substrate, titanium and nickel metal are generally used as transition layers due to good adhesion, so that better connection between the aluminum metal and the silver metal is realized, and the silver metal is used as an excellent low-resistance conductive material, so that the device and an external circuit are connected. In practical production application, the evaporating process temperature is generally lower than 250 ℃ according to the vacuum degree requirement, and aluminum-silicon alloy cannot be effectively formed between the silicon substrate and the aluminum metal layer at the evaporating process temperature, so that adhesion between the aluminum metal layer and the silicon substrate is deviated, gaps are easily formed between the aluminum metal layer and the silicon substrate or peeling is easily caused between the aluminum metal layer and the silicon metal layer, contact resistance between the aluminum metal layer and the silicon metal layer is increased, conduction loss is increased, and product performance and yield are greatly affected. Fig. 2 is a diagram showing a product structure after a multi-layer metal vapor deposition process in the prior art. As shown in fig. 2, since a plurality of holes 201 are formed between the first metal layer 21 and the silicon substrate 20 during evaporation, the metal layer of the second metal layer 22 deposited in the subsequent process is wrinkled, so that gaps are easy to occur between the metal layers, and the risk of peeling is increased.
Aiming at the problems existing in the existing evaporation process, several solutions are provided in the industry at present: in the vapor plating process, after the first layer of aluminum metal is vapor plated on a substrate, the substrate is directly taken out from vapor plating equipment and placed into another annealing equipment to be annealed to form sufficient aluminum-silicon alloy, and then the excessive aluminum metal on the surface is etched and then placed into the vapor plating equipment again to complete the vapor plating of the subsequent layers of metal. The method can solve the problem of adhesion between metal layers, but has complex process steps and higher cost, and needs to be separated from a vacuum environment, so that the problems of substrate pollution and surface oxidation exist. And in addition, a metal sputtering mode is adopted, argon is introduced in a vacuum environment, the argon is ionized by a high-voltage direct-current power supply, and under the action of bias voltage, argon ions with positive charges bombard a metal target where the negative electrode is positioned, and the target metal is deposited on the substrate sequentially to form a film. The sputtering process temperature can be generally higher than 400 ℃, and better metal silicide can be formed between the silicon substrate and the aluminum metal layer, but sputtering equipment generally adopts a single-chip processing mode, the unit price of the equipment is expensive, and the integrated processing cost of the unit silicon substrate is obviously higher than that of evaporation equipment.
The metal vapor plating process directly affects the production yield of semiconductor devices and has a critical effect on the application of the semiconductor devices, but no special vapor plating equipment has been available to date for effectively solving the problem of stripping of vapor plating aluminum-silicon alloy on the back of IGBT devices. Therefore, how to improve the quality of the vapor plating process, reduce the gaps between metal layers and improve the production yield of the process without increasing the process cost is a problem to be solved at present.
Disclosure of Invention
The invention aims to solve the technical problems of improving the quality of an evaporation process without increasing the process cost, reducing gaps between metal layers, improving the process production yield and providing a multi-layer metal layer evaporation device and an evaporation method.
In order to solve the above problems, the present invention provides a multi-layered metal layer vapor deposition apparatus comprising: the transmission cavity, be provided with the arm in the transmission cavity for get and put and the transmission wafer, the arm further includes: the wafer annealing device comprises a pedestal, an annealing assembly and an electrostatic chuck, wherein the pedestal is used for bearing a wafer, the annealing assembly is used for performing annealing, and the electrostatic chuck is used for fixedly adsorbing the wafer on the surface of the pedestal; the evaporation cavity is adjacent to the transmission cavity and is used for performing front-stage evaporation on the wafer so as to form a first metal layer on the surface of the wafer by evaporation; the annealing component is used for annealing the wafer subjected to front-stage evaporation so as to form a metal silicide layer between the first metal layer and the wafer; the evaporation cavity is further used for performing back-stage evaporation on the annealed wafer so as to form a second metal layer on the surface of the first metal layer by evaporation; the device can take the wafer out to the transmission cavity and anneal through the annealing component after the wafer completes the front-stage evaporation in the evaporation cavity, and then transport the wafer back to the evaporation cavity to complete the rear-stage evaporation so as to reduce gaps among the multiple metal layers formed by evaporation.
In order to solve the above problems, the present invention provides a multi-layer metal layer vapor deposition method, which adopts the multi-layer metal layer vapor deposition device of the present invention, comprising the following steps: transmitting the wafer to the evaporation cavity through a mechanical arm in the transmission cavity; performing front-stage evaporation on the wafer in the evaporation cavity so as to form a first metal layer on the surface of the wafer by evaporation; the wafer is taken out to the transmission cavity through the mechanical arm, and is adsorbed and fixed on the surface of the base through the electrostatic chuck; annealing the wafer subjected to front-stage evaporation in the transmission cavity through the annealing assembly to form a metal silicide layer between the first metal layer and the wafer; transferring the wafer back to the evaporation cavity; and performing back-end evaporation on the annealed wafer in the evaporation cavity to form a second metal layer on the surface of the annealed first metal layer of the wafer by evaporation, thereby reducing gaps among the multiple metal layers formed by evaporation
According to the technical scheme, the annealing assembly is additionally arranged on the mechanical arm of the transmission cavity in the evaporation device, when the wafer is subjected to front-stage evaporation in the evaporation cavity of the evaporation device, the wafer is transferred to the transmission cavity and annealed through the annealing assembly, and then the wafer is transferred back to the evaporation cavity to be subjected to rear-stage evaporation. In the annealing process, a metal silicide layer can be formed between the first metal layer formed by front-stage evaporation and the wafer, so that the adhesiveness between the first metal layer formed by front-stage evaporation and the wafer is increased. Because the interface of the annealed first metal layer is relatively flat, the coverage of the second metal layer formed by the back-stage evaporation is correspondingly improved, the gaps among the multiple metal layers formed by the evaporation can be reduced, the risk of peeling the metal layers is reduced, and finally, the device with high reliability and low impedance is formed. The annealing can be completed without opening equipment in the evaporation process, so that the problems of wafer pollution and surface oxidation are avoided. By improving the device, the quality of the evaporation process is improved on the premise of not increasing the process cost, the adhesiveness between the metal layers and the wafer is increased, gaps among multiple layers of metal layers are reduced, the risk of peeling the metal layers is reduced, and the process production yield is improved.
Drawings
Fig. 1 is a schematic structural diagram of a vapor deposition apparatus in the prior art.
Fig. 2 is a diagram of a product structure after a multi-layer metal vapor deposition process in the prior art.
Fig. 3 is a schematic structural diagram of an embodiment of a multi-layer metal layer vapor deposition device according to the present invention.
Fig. 4A is a schematic structural diagram of an embodiment of a mechanical arm according to the present invention.
Fig. 4B is a top view of an embodiment of a robot arm according to the present invention.
Fig. 5 is a flowchart illustrating steps of an embodiment of a method for vapor deposition of multiple metal layers according to the present invention.
Fig. 6A to 6D are process flow diagrams of an embodiment of a multi-layer metal layer evaporation method according to the present invention.
Detailed Description
The following describes in detail a specific embodiment of a multilayer metal layer vapor deposition apparatus and a vapor deposition method according to the present invention with reference to the drawings.
An embodiment of the invention provides a multi-layer metal layer evaporation device.
Referring to fig. 3 to fig. 4B, fig. 3 is a schematic structural diagram of an embodiment of the multi-layer metal layer vapor deposition device according to the present invention, fig. 4A is a schematic structural diagram of an embodiment of the mechanical arm according to the present invention, and fig. 4B is a top view of an embodiment of the mechanical arm according to the present invention.
As shown in fig. 3, the multi-layer metal layer vapor deposition apparatus includes: a transfer chamber 30, and a vapor deposition chamber 31. A robot 301 is disposed in the transfer chamber 30, and the robot 301 is configured to pick and place and transfer the wafer 40 (shown in fig. 4A).
As shown in fig. 4A, the mechanical arm 301 further includes: the wafer annealing device comprises a base 41, an annealing assembly 42 and an electrostatic chuck 43, wherein the base 41 is used for bearing the wafer 40, the annealing assembly 42 is used for performing annealing, and the electrostatic chuck 43 is used for fixedly adsorbing the wafer 40 on the surface of the base 41.
With continued reference to fig. 3, the evaporation chamber 31 is adjacent to the transmission chamber 30, and is used for performing front-stage evaporation on the wafer 40 to form a first metal layer on the surface of the wafer 40 by evaporation. The annealing component 42 is configured to anneal the wafer 40 after the front-end evaporation, so as to form a metal silicide layer between the first metal layer and the wafer 40. The evaporation chamber 31 is further configured to perform a back-end evaporation on the annealed wafer 40, so as to form a second metal layer on the surface of the first metal layer by evaporation. The device can take the wafer 40 out to the transmission cavity 30 and anneal through the annealing assembly 42 after the wafer 40 completes the front-stage vapor deposition in the vapor deposition cavity 31, and then transfer the wafer 40 back to the vapor deposition cavity 31 to complete the rear-stage vapor deposition, so as to reduce the gaps among the multiple metal layers formed by the vapor deposition.
The first metal layer is of a different material than the second metal layer. When the first metal layer is a single-layer aluminum metal layer, the second metal layer may be a titanium, nickel, silver multilayer metal stack. When the first metal layer is an aluminum-titanium multilayer metal laminate, the second metal layer may be a nickel-silver multilayer metal laminate. When the first metal layer is a multi-layer metal stack of aluminum, titanium and nickel, the second metal layer may be a single silver metal layer. That is, one metal layer or a plurality of metal layers may be formed in the preceding-stage vapor deposition, and the subsequent plurality of metal layers or one metal layer may be formed in the subsequent-stage vapor deposition after annealing. Aluminum metal is directly deposited on a silicon substrate, titanium and nickel metal are generally used as transition layers due to good adhesiveness, better connection between aluminum and silver metal is achieved, and silver metal is used as an excellent low-resistance conductive material, so that the device and an external circuit are connected; the order of the metal layers can be adjusted according to the process and the product requirements.
According to the technical scheme, the annealing assembly 42 is additionally arranged in the mechanical arm 301 of the transmission cavity 30 in the vapor deposition device, when the wafer 40 completes the front-stage vapor deposition in the vapor deposition cavity 31 of the vapor deposition device, the wafer 40 is transferred to the transmission cavity 30 and annealed through the annealing assembly 42, and then the wafer 40 is transferred back to the vapor deposition cavity 31 to complete the rear-stage vapor deposition. Because a metal silicide layer can be formed between the first metal layer formed by the front-stage vapor deposition and the wafer 40 in the annealing process, the adhesion between the first metal layer formed by the front-stage vapor deposition and the wafer 40 is increased. Because the interface of the annealed first metal layer is relatively flat, the coverage of the second metal layer formed by the back-stage evaporation is correspondingly improved, the gaps among the multiple metal layers formed by the evaporation can be reduced, the risk of peeling the metal layers is reduced, and finally, the device with high reliability and low impedance is formed. The annealing can be completed without opening equipment in the evaporation process, so that the problems of pollution and surface oxidation of the wafer 40 are avoided. By improving the device, the quality of the vapor deposition process is improved on the premise of not increasing the process cost, the adhesiveness between the first metal layer and the wafer 40 is increased, gaps between multiple metal layers are reduced, the risk of peeling of the metal layers is reduced, and the process production yield is improved.
In some embodiments, the annealing assembly 42 includes: heating element 421, gas channel 422, sensing element 433. The heating element 421 is disposed on a side of the susceptor 41 near the wafer 40, and is electrically connected to an external power source (not shown). The gas channel 422 is located at a side of the heating element 421 away from the wafer 40, and is used for introducing annealing gas to the wafer 40 after being heated by the heating element 421. The sensing element 423 is used to detect an annealing temperature. When the gas channel is opened to supply the annealing gas, the heating element 421 generates heat by supplying power from an external power source, heats the annealing gas, and conveys the heated annealing gas to the wafer 40; and simultaneously detecting an annealing temperature through the sensing element 421, and realizing an annealing process requirement when the annealing temperature reaches a target temperature (i.e., when the annealing gas is heated to the target temperature); a metal silicide layer is formed between the first metal layer and the wafer 40 by heat exchange of the wafer 40 with the annealing gas.
In this embodiment, the heating element 421 comprises a resistive wire. In other embodiments, the heating element 421 may also include a single bulb, or include a plurality of bulbs connected in parallel and placed side by side, or include a plurality of resistive wires connected in parallel and placed side by side.
In some embodiments, the sensing elements 423 are thermocouples symmetrically disposed on both sides of the heating element.
In some embodiments, the electrostatic chuck 43 is a bipolar electrostatic chuck, and includes a first electrode 431 and a second electrode 432. The first electrode 431 and the second electrode 432 are respectively located at two sides of the heating element 421 and between the heating element 421 and the sensing element 423, and are connected to an external power source (not shown) through metal wires; the first electrode 431 and the second electrode 432 can polarize and adsorb and fix the wafer 40 on the surface of the susceptor 41 in the on state. The first electrode 431 and the second electrode 432 are respectively connected to the positive and negative electrodes of an external power source. In some embodiments, the first electrode 431 is connected to an external power source positive electrode and the second electrode 432 is connected to an external power source negative electrode.
As shown in fig. 4B, in some embodiments, the surface of the susceptor 41 has a plurality of through holes 411 for passing an annealing gas such that the annealing gas is delivered to the surface of the wafer 40 (mainly the surface of the wafer near the susceptor).
In this embodiment, the base 41 further includes: two supporting legs 412 are located on the surface of the base 41, and are used for supporting the wafer 40. The supporting legs 412 have a certain height, so that a certain gap exists between the wafer 40 and the susceptor 41, and the annealing gas can pass between the wafer 40 and the susceptor 41, thereby fully realizing heat exchange between the wafer 40 and the susceptor 41. The two support legs 412 may be symmetrically disposed to smoothly support the wafer 40. In other embodiments, the base 41 may further include one, three, or more support feet 412.
With continued reference to fig. 3, in some embodiments, the apparatus further includes a cassette placement stage 32 adjacent the transfer chamber 30 for placing a cassette loaded with wafers. The robot 301 is further configured to transfer the wafer 40 between the wafer cassette on the cassette placement stage 32 and the evaporation chamber 31.
In some embodiments, the transfer chamber 30 is a vacuum chamber that can be provided with a vacuum environment by a vacuum pump (not shown).
Based on the same inventive concept, the invention also provides a multi-layer metal layer evaporation method, which can complete multi-layer metal layer evaporation by adopting the multi-layer metal layer evaporation device.
Referring to fig. 5 to fig. 6D together, fig. 5 is a flowchart illustrating steps of an embodiment of a multi-layer metal layer vapor deposition method according to the present invention, wherein the method employs the multi-layer metal layer vapor deposition apparatus shown in fig. 3 to fig. 4B, and fig. 6A to fig. 6D are process flow diagrams of an embodiment of the multi-layer metal layer vapor deposition method according to the present invention.
As shown in fig. 5, the method in this embodiment includes the following steps: step S51, a wafer is transmitted to the evaporation cavity through a mechanical arm in the transmission cavity; step S52, performing front-stage evaporation on the wafer in the evaporation cavity so as to form a first metal layer on the surface of the wafer by evaporation; step S53, taking the wafer out to the transmission cavity through the mechanical arm and fixing the wafer on the surface of the base through the electrostatic chuck in an adsorption manner; step S54, annealing the wafer subjected to front-stage evaporation in the transmission cavity through the annealing component so as to form a metal silicide layer between the first metal layer and the wafer; step S55, the wafer is transported back to the evaporation cavity; and step S56, performing back-stage evaporation on the annealed wafer in the evaporation cavity so as to form a second metal layer on the surface of the annealed first metal layer of the wafer by evaporation, thereby reducing gaps among the multiple metal layers formed by evaporation. A detailed explanation is given below in connection with the process flow diagrams.
Referring to fig. 6A and step S51, the wafer 60 is transferred to the evaporation chamber 31 by the robot 301 in the transfer chamber 30. In some embodiments, the step of transferring the wafer 60 to the evaporation chamber 31 by the robot 301 in the transfer chamber 30 further includes the following steps:
(1) Placing the wafer 60 in a cassette and in a cassette placement stage 32 adjacent to the transfer chamber 30; (2) evacuating the interior of the wafer cassette; (3) The wafer 60 is taken out of the wafer cassette to the transfer chamber 30 by the robot 301 and then transported to the vapor deposition chamber 31.
Referring to fig. 6B and step S52, a front-stage vapor deposition is performed on the wafer 60 in the vapor deposition chamber 31 to form a first metal layer 61 on the surface of the wafer 60 by vapor deposition. In this embodiment, the first metal layer 61 may be a single aluminum metal layer. In other embodiments, the first metal layer 61 may be a multi-layer metal stack of aluminum, titanium, or nickel. Due to the characteristics of the process, a plurality of holes 601 are formed between the first metal layer 61 and the wafer 60, and the holes 601 may cause wrinkles on the surface of the first metal layer 61, thereby affecting the flatness of the subsequent metal layers and increasing the risk of peeling the metal layers.
Referring to fig. 6C, and steps S53 to S54, the wafer 60 is taken out to the transfer chamber 30 by the mechanical arm 301, and the wafer 60 is fixed on the surface of the base 41 by the electrostatic chuck 43; the wafer 60 after the front-stage evaporation is annealed in the transfer chamber 30 by the annealing assembly 42 to form a metal silicide layer 602 between the first metal layer 61 and the wafer 60. The electrostatic chuck 43 is a bipolar electrostatic chuck, and includes a first electrode 431 and a second electrode 432. The first electrode 431 and the second electrode 432 are respectively located at two sides of the heating element 421 and between the heating element 421 and the sensing element 423, and are connected to an external power source (not shown) through metal wires; the first electrode 431 and the second electrode 432 can polarize and adsorb and fix the wafer 40 on the surface of the susceptor 41 in the on state.
In this embodiment, the step of annealing the first metal layer 61 formed by vapor deposition in the transmission chamber 30 through the annealing component 42 of the mechanical arm 301 further includes the following steps: (1) Powering the heating element 421 in the annealing assembly 42 (in particular, it may be powered by an external power source); (2) Introducing annealing gas through a gas channel 422 in the annealing assembly 42, heating by the heating element 421, and conveying the heated gas to the surface of the wafer 60; (3) Detecting an annealing temperature by a sensing element 423 in the annealing assembly 42; (4) When the annealing temperature reaches a target temperature, heat exchange is performed between the wafer 60 and the annealing gas to form a metal silicide layer 602 between the first metal layer 61 and the wafer 60; (5) Stopping the supply of the annealing gas and stopping the power supply to the heating element 421, and completing the annealing. The metal silicide layer 602 increases the adhesion of the first metal layer 61 to the wafer 60, reducing the risk of spalling of the first metal layer 61 and subsequent metal layers. After annealing, the holes 601 are removed, and the annealed first metal layer 61 is relatively flat, providing a good surface for the deposition of subsequent metal layers.
Referring to fig. 6D, and steps S54 to S55, the wafer 60 is transferred back to the evaporation chamber 31 by the robot 301; the annealed wafer 60 is subjected to a post-vapor deposition in the vapor deposition chamber 31 to form a second metal layer 62 on the surface of the annealed first metal layer 61 of the wafer 60 by vapor deposition, thereby reducing the gaps between the metal layers formed by vapor deposition. In some embodiments, the second metal layer 62 is a different material than the first metal layer 61. When the first metal layer 61 is a single aluminum metal layer, the second metal layer 62 may be a titanium, nickel, silver multilayer metal stack. When the first metal layer 61 is a multi-layered metal stack of aluminum and titanium, the second metal layer 62 may be a multi-layered metal stack of nickel and silver. When the first metal layer 61 is a multi-layered metal stack of aluminum, titanium, nickel, the second metal layer 62 may be a single silver metal layer. Aluminum metal is directly deposited on a silicon substrate, titanium and nickel metal are generally used as transition layers due to good adhesiveness, better connection between aluminum and silver metal is achieved, and silver metal is used as an excellent low-resistance conductive material, so that the device and an external circuit are connected; the order of the metal layers can be adjusted according to the process and the product requirements.
In some embodiments, the step of performing the post-evaporation on the annealed wafer 60 in the evaporation chamber 31 further includes: the wafer 60 after the back-stage evaporation is taken out from the evaporation chamber 31 to the transmission chamber 30 by the mechanical arm 301, and then transported back to the wafer cassette of the wafer cassette placing platform 32.
According to the technical scheme, the annealing assembly 42 is additionally arranged on the mechanical arm 301 of the transmission cavity 30 in the vapor deposition device, when the wafer 60 completes the front-stage vapor deposition in the vapor deposition cavity 31 of the vapor deposition device, the wafer 60 is transferred to the transmission cavity 30 and annealed through the annealing assembly 42, and then the wafer 60 is transferred back to the vapor deposition cavity 31 to complete the rear-stage vapor deposition. In the annealing process, a metal silicide layer may be formed between the first metal layer 61 formed by the front-stage evaporation and the wafer 60, so that the adhesion between the first metal layer 61 formed by the front-stage evaporation and the wafer 60 is increased. Because the interface of the annealed first metal layer 61 is relatively flat, the coverage of the second metal layer 62 formed by back-end evaporation will be correspondingly improved, so that the gaps between the multiple metal layers formed by evaporation can be reduced, the risk of peeling of the metal layers is reduced, and finally, a device with high reliability and low impedance is formed. The annealing can be completed without opening equipment in the evaporation process, so that the problems of pollution and surface oxidation of the wafer 60 are avoided. By improving the device, the quality of the evaporation process is improved on the premise of not increasing the process cost, the adhesiveness between the first metal layer 61 and the wafer 60 is increased, gaps among multiple metal layers are reduced, the risk of peeling of the metal layers is reduced, and the process production yield is improved.
It should be noted that references in the specification to "one embodiment," "an example embodiment," "some embodiments," etc., indicate that the embodiment described may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure, or characteristic is described in connection with an embodiment, it is submitted that it is within the knowledge of one skilled in the relevant art to effect such feature, structure, or characteristic in connection with other embodiments whether or not explicitly described.
Generally, the terms may be understood, at least in part, from the usage in the context. For example, the term "one or more" as used herein, depending at least in part on the context, may be used to describe any feature, structure, or characteristic in a singular sense, or may be used to describe a feature, structure, or combination of features in a plural sense. Similarly, terms such as "a," "an," or "the" may also be construed to express singular usage or plural usage depending at least in part on the context. In addition, the term "based on" may be understood as not necessarily intended to express a set of exclusive factors, but may instead, depending at least in part on the context, allow for other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected/coupled" means not only that one component is directly coupled to another component, but also that one component is indirectly coupled to another component through intervening components.
It should be noted that the terms "comprising" and "having" and their variants are referred to in the document of the present invention and are intended to cover non-exclusive inclusion. The terms "first," "second," and the like are used to distinguish similar objects and not necessarily to describe a particular order or sequence unless otherwise indicated by context, it should be understood that the data so used may be interchanged where appropriate. In addition, the embodiments of the present invention and the features in the embodiments may be combined with each other without collision. In addition, in the above description, descriptions of well-known components and techniques are omitted so as to not unnecessarily obscure the present invention. In the foregoing embodiments, each embodiment is mainly described for differences from other embodiments, and the same/similar parts between the embodiments are referred to each other.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A multilayer metal layer vapor deposition device, comprising:
the transmission cavity, be provided with the arm in the transmission cavity for get and put and the transmission wafer, the arm further includes: the wafer annealing device comprises a pedestal, an annealing assembly and an electrostatic chuck, wherein the pedestal is used for bearing a wafer, the annealing assembly is used for performing annealing, and the electrostatic chuck is used for fixedly adsorbing the wafer on the surface of the pedestal;
the evaporation cavity is adjacent to the transmission cavity and is used for performing front-stage evaporation on the wafer so as to form a first metal layer on the surface of the wafer by evaporation;
the annealing component is used for annealing the wafer subjected to front-stage evaporation so as to form a metal silicide layer between the first metal layer and the wafer;
the evaporation cavity is further used for performing back-stage evaporation on the annealed wafer so as to form a second metal layer on the surface of the first metal layer through evaporation.
2. The apparatus of claim 1, wherein the annealing assembly comprises:
the heating element is positioned at one side of the base close to the wafer and is electrically connected to an external power supply;
the gas channel is positioned at one side of the heating element far away from the wafer and is used for introducing annealing gas to be conveyed to the wafer after being heated by the heating element;
and the sensing element is used for detecting the annealing temperature.
3. The apparatus of claim 2, wherein the device comprises a plurality of sensors,
the heating element comprises at least one resistance wire or bulb;
the sensing elements are thermocouples symmetrically arranged on two sides of the heating element.
4. The device of claim 2, wherein the electrostatic chuck is a bipolar electrostatic chuck comprising a first electrode and a second electrode, the first electrode and the second electrode being located on either side of the heating element and between the heating element and the sensing element, respectively, and connected to an external power source by a metal wire; the first electrode and the second electrode can polarize and adsorb and fix the wafer positioned on the surface of the base under the conducting state.
5. The apparatus of claim 2, wherein the susceptor surface has a plurality of through holes for passing an annealing gas such that the annealing gas is delivered to the surface of the wafer.
6. The apparatus of claim 1, wherein the base further comprises: and the at least two supporting feet are positioned on the surface of the base and are used for supporting the wafer.
7. The apparatus as recited in claim 1, further comprising:
the wafer box placing platform is adjacent to the transmission cavity and is used for placing the wafer box loaded with the wafer;
the mechanical arm is further used for conveying the wafer between the wafer box on the wafer box placing platform and the evaporation cavity.
8. A multilayer metal layer vapor deposition method, characterized by using the multilayer metal layer vapor deposition apparatus according to any one of claims 1 to 7, comprising the steps of:
transmitting the wafer to the evaporation cavity through a mechanical arm in the transmission cavity;
performing front-stage evaporation on the wafer in the evaporation cavity so as to form a first metal layer on the surface of the wafer by evaporation;
the wafer is taken out to the transmission cavity through the mechanical arm, and is adsorbed and fixed on the surface of the base through the electrostatic chuck;
annealing the wafer subjected to front-stage evaporation in the transmission cavity through the annealing assembly to form a metal silicide layer between the first metal layer and the wafer;
transferring the wafer back to the evaporation cavity; and
and performing back-stage evaporation on the annealed wafer in the evaporation cavity so as to form a second metal layer on the surface of the annealed first metal layer of the wafer by evaporation, thereby reducing gaps among the multiple metal layers formed by evaporation.
9. The method of claim 8, wherein the step of annealing the first metal layer formed by vapor deposition in the transfer chamber by the annealing assembly of the robot further comprises: powering a heating element in the annealing assembly;
introducing annealing gas through a gas channel in the annealing assembly, heating by the heating element, and conveying the heated gas to the surface of the wafer;
detecting an annealing temperature by a sensing element in the annealing assembly;
when the annealing temperature reaches a target temperature, forming a metal silicide layer between the first metal layer and the wafer through heat exchange between the wafer and the annealing gas;
stopping introducing the annealing gas and stopping supplying power to the heating element to finish annealing.
10. The method of claim 8, wherein the first metal layer is a different material than the second metal layer.
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