CN116425193A - Gallium arsenide cluster and preparation method and application thereof - Google Patents
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 116
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 90
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000002245 particle Substances 0.000 claims abstract description 32
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 43
- 229910052785 arsenic Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 7
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 24
- 229910002804 graphite Inorganic materials 0.000 description 18
- 239000010439 graphite Substances 0.000 description 18
- 239000002699 waste material Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010431 corundum Substances 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 239000004570 mortar (masonry) Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 238000010183 spectrum analysis Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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Abstract
本发明提供了一种砷化镓团簇及其制备方法和应用，属于半导体领域。本发明提供的砷化镓团簇的制备方法，包括以下步骤：将砷化镓颗粒进行加热分解，得到所述砷化镓团簇。在砷化镓颗粒受热分解的过程中，一部分砷原子和镓原子没有分开而是团聚在一起形成了团簇。同时本发明的制备方法的操作流程短、环境友好。实施例结果表明，本发明成功制备得到了砷化镓团簇。
The invention provides a gallium arsenide cluster and its preparation method and application, belonging to the field of semiconductors. The preparation method of the gallium arsenide cluster provided by the invention comprises the following steps: decomposing the gallium arsenide particles by heating to obtain the gallium arsenide cluster. During the thermal decomposition of gallium arsenide particles, a part of arsenic atoms and gallium atoms are not separated but agglomerated together to form clusters. At the same time, the preparation method of the present invention has a short operation flow and is environmentally friendly. The results of the examples show that the present invention successfully prepares gallium arsenide clusters.
Description
技术领域technical field
本发明涉及半导体领域，尤其涉及一种砷化镓团簇及其制备方法和应用。The invention relates to the field of semiconductors, in particular to a gallium arsenide cluster and its preparation method and application.
背景技术Background technique
砷化镓是拥有高饱和电子速度、高电子透射率、半绝缘性能的二代半导体材料，在计算机、发光二极管、电子通信、航天、军事等领域应用广泛。作为尺寸介于宏观与微观的新体系，由几个乃至上千个原子、分子或离子通过物理或化学结合力组成的砷化镓团簇具有许多独特的性质。但是目前的砷化镓团簇是通过动力学模拟出来研究的，其制备方法未见报道。Gallium arsenide is a second-generation semiconductor material with high saturation electron velocity, high electron transmittance, and semi-insulating properties. It is widely used in computers, light-emitting diodes, electronic communications, aerospace, military and other fields. As a new system whose size is between macroscopic and microscopic, gallium arsenide clusters composed of several or even thousands of atoms, molecules or ions through physical or chemical bonding have many unique properties. However, the current gallium arsenide clusters are studied through dynamic simulations, and their preparation methods have not been reported.
发明内容Contents of the invention
本发明的目的在于提供一种砷化镓团簇及其制备方法和应用，本发明的制备方法成功制备了砷化镓团簇。The object of the present invention is to provide a gallium arsenide cluster and its preparation method and application. The preparation method of the present invention successfully prepares the gallium arsenide cluster.
为了实现上述发明目的，本发明提供以下技术方案：In order to achieve the above-mentioned purpose of the invention, the present invention provides the following technical solutions:
本发明提供了一种砷化镓团簇的制备方法，包括以下步骤：The invention provides a method for preparing gallium arsenide clusters, comprising the following steps:
将砷化镓颗粒在真空条件下进行加热分解，得到所述砷化镓团簇；thermally decomposing gallium arsenide particles under vacuum conditions to obtain the gallium arsenide clusters;
所述加热分解的温度为900～1100℃。The thermal decomposition temperature is 900-1100°C.
优选的，所述砷化镓颗粒中镓元素物质的量高于砷元素物质的量。Preferably, the amount of the gallium element substance in the gallium arsenide particles is higher than the amount of the arsenic element substance.
优选的，所述砷化镓颗粒的粒径不高于10mm。Preferably, the particle size of the gallium arsenide particles is not higher than 10 mm.
优选的，所述砷化镓颗粒中含镓元素的质量含量为47～52％，所述镓元素与砷元素的摩尔比≥1。Preferably, the mass content of the gallium element in the gallium arsenide particles is 47-52%, and the molar ratio of the gallium element to the arsenic element is ≥1.
优选的，所述砷化镓颗粒的原料包括砷化镓头尾废料或砷化镓。Preferably, the raw materials of the gallium arsenide particles include gallium arsenide head and tail waste or gallium arsenide.
优选的，所述加热分解的保温时间为120～240min，所述真空条件的压力为1～5Pa。Preferably, the heat preservation time of the thermal decomposition is 120-240 min, and the pressure of the vacuum condition is 1-5 Pa.
本发明还提供了上述方案所述制备方法制备的砷化镓团簇，所述砷化镓团簇中镓元素与砷元素的质量比为1.5～3：1。The present invention also provides the gallium arsenide cluster prepared by the preparation method described in the above scheme, wherein the mass ratio of gallium element to arsenic element in the gallium arsenide cluster is 1.5-3:1.
优选的，所述砷化镓团簇为片状结构。Preferably, the gallium arsenide cluster is a sheet structure.
优选的，所述砷化镓团簇的尺寸为10～50μm，厚度为4～6μm。Preferably, the gallium arsenide cluster has a size of 10-50 μm and a thickness of 4-6 μm.
本发明还提供了上述方案所述砷化镓团簇在计算机、发光二极管或电子通信领域中的应用。The present invention also provides the application of the gallium arsenide cluster described in the above solution in the field of computer, light-emitting diode or electronic communication.
本发明提供了一种砷化镓团簇的制备方法，包括以下步骤：将砷化镓颗粒在真空条件下进行加热分解，得到所述砷化镓团簇；所述加热分解的温度为900～1100℃。在砷化镓颗粒受热分解的过程中，一部分砷原子和镓原子没有分开而是团聚在一起形成了团簇。同时本发明的制备方法的操作流程短、环境友好。实施例结果表明，本发明成功制备得到了砷化镓团簇。The invention provides a preparation method of gallium arsenide clusters, comprising the following steps: thermally decomposing gallium arsenide particles under vacuum conditions to obtain the gallium arsenide clusters; the temperature of the thermal decomposition is 900- 1100°C. During the thermal decomposition of gallium arsenide particles, a part of arsenic atoms and gallium atoms are not separated but agglomerated together to form clusters. At the same time, the preparation method of the present invention has a short operation flow and is environmentally friendly. The results of the examples show that the present invention successfully prepares gallium arsenide clusters.
进一步地，本发明通过使砷化镓颗粒中镓元素物质的量高于砷元素物质的量，使镓原子和砷原子在受热结合成镓原子数目较多的团簇。富镓砷化镓团簇比富砷砷化镓团簇具有更低的电阻率。进一步地，本发明采用砷化镓头尾废料制备砷化镓团簇，在降低制造成本的同时实现了砷化镓头尾废料的资源化利用。Furthermore, in the present invention, the amount of the gallium element substance in the gallium arsenide particles is higher than the amount of the arsenic element substance, so that the gallium atoms and the arsenic atoms are combined into clusters with a large number of gallium atoms when heated. GaAs-rich GaAs clusters have lower resistivity than GaAs-rich GaAs clusters. Furthermore, the present invention uses gallium arsenide head and tail scraps to prepare gallium arsenide clusters, and realizes resource utilization of gallium arsenide head and tail scraps while reducing manufacturing costs.
附图说明Description of drawings
图1为本发明所述富镓砷化镓团簇的基态结构图；Fig. 1 is the ground state structural diagram of gallium-rich gallium arsenide cluster described in the present invention;
图2为实施例1富镓砷化镓团簇500倍的电子显微图；Fig. 2 is the electron micrograph of
图3为实施例1富镓砷化镓团簇5000倍的电子显微图；Fig. 3 is the electron micrograph of
图4为实施例1富镓砷化镓团簇的XRD分析图；Fig. 4 is the XRD analysis diagram of the gallium-rich gallium arsenide cluster in
图5为实施例1富镓砷化镓团簇的X射线光电子能谱表征图；Fig. 5 is the X-ray photoelectron spectroscopy characterization diagram of the gallium-rich gallium arsenide cluster in Example 1;
图6为实施例1富镓砷化镓团簇中镓元素的X射线能谱分析图；6 is an X-ray energy spectrum analysis diagram of the gallium element in the gallium-rich gallium arsenide cluster in
图7为实施例1富镓砷化镓团簇中砷元素的X射线能谱分析图。7 is an X-ray energy spectrum analysis diagram of the arsenic element in the gallium-rich gallium arsenide cluster in
具体实施方式Detailed ways
本发明提供了一种砷化镓团簇的制备方法，包括以下步骤：The invention provides a method for preparing gallium arsenide clusters, comprising the following steps:
将砷化镓颗粒在真空条件下进行加热分解，得到所述砷化镓团簇；thermally decomposing gallium arsenide particles under vacuum conditions to obtain the gallium arsenide clusters;
所述加热分解的温度为900～1100℃。The thermal decomposition temperature is 900-1100°C.
在本发明中，所述砷化镓颗粒的粒径优选不高于10mm，更优选为2～8mm，进一步优选为4～6mm。本发明通过使砷化镓颗粒中镓元素物质的量高于砷元素物质的量，优选具体的所述砷化镓颗粒中含镓元素的质量含量为47～52％，所述镓元素与砷元素的摩尔比≥1，制备得到了富镓砷化镓团簇。本发明所述富镓砷化镓团簇的基态结构如图1所示。In the present invention, the particle size of the gallium arsenide particles is preferably not higher than 10 mm, more preferably 2-8 mm, and even more preferably 4-6 mm. In the present invention, the amount of the gallium element substance in the gallium arsenide particle is higher than the amount of the arsenic element substance, preferably the mass content of the gallium element in the gallium arsenide particle is 47-52%, and the gallium element and arsenic The molar ratio of elements is greater than or equal to 1, and gallium-rich gallium arsenide clusters are prepared. The ground state structure of the gallium-rich gallium arsenide cluster described in the present invention is shown in FIG. 1 .
在本发明中，所述砷化镓颗粒的原料包括砷化镓头尾废料或砷化镓，所述砷化镓的纯度优选≥99％。在本发明中，所述砷化镓颗粒的制备方法优选包括：将原料依次进行切割和/或研磨。本发明对所述切割和研磨没有特殊的限定，采用本领域技术人员熟知的方案得到目标粒径的砷化镓颗粒即可。具体的，在本发明实施例中，采用金刚线将砷化镓头尾废料切割；采用刚玉研钵将砷化镓头尾废料研磨。小的粒径有利于团簇的生成。In the present invention, the raw materials of the gallium arsenide particles include gallium arsenide head and tail scraps or gallium arsenide, and the purity of the gallium arsenide is preferably ≥99%. In the present invention, the preparation method of the gallium arsenide particles preferably includes: sequentially cutting and/or grinding the raw materials. In the present invention, there is no special limitation on the cutting and grinding, as long as gallium arsenide particles with a target particle size are obtained by adopting a scheme well known to those skilled in the art. Specifically, in the embodiment of the present invention, diamond wire is used to cut the head and tail scraps of GaAs; and a corundum mortar is used to grind the head and tail scraps of GaAs. Small particle size is conducive to the formation of clusters.
在本发明中，所述加热分解的温度优选为900～1100℃，更优选为950～1050℃；保温时间优选为120～240min，更优选为150～200min，进一步优选为160～180min；压力优选为1～5Pa，更优选为3～4Pa。In the present invention, the thermal decomposition temperature is preferably 900-1100°C, more preferably 950-1050°C; the holding time is preferably 120-240min, more preferably 150-200min, further preferably 160-180min; the pressure is preferably It is 1 to 5 Pa, more preferably 3 to 4 Pa.
在本发明中，所述加热分解优选在真空管式炉石英管中进行。在本发明中，进行加热分解前优选将所述砷化镓颗粒装入石墨坩埚后推入所述真空管式炉石英管的加热区。In the present invention, the thermal decomposition is preferably carried out in a vacuum tube furnace quartz tube. In the present invention, before thermal decomposition, the gallium arsenide particles are preferably loaded into a graphite crucible and then pushed into the heating zone of the quartz tube of the vacuum tube furnace.
在本发明中，所述真空管式炉石英管的内侧铺由石墨纸。在本发明中，所述石墨纸优选为纯碳材质，所述石墨纸的含碳量优选为99.9wt％，厚度优选为0.1～0.3mm。所述石墨纸用来收集砷化镓团簇。In the present invention, the inner side of the quartz tube of the vacuum tube furnace is covered with graphite paper. In the present invention, the graphite paper is preferably made of pure carbon, the carbon content of the graphite paper is preferably 99.9 wt%, and the thickness is preferably 0.1-0.3 mm. The graphite paper is used to collect gallium arsenide clusters.
加热分解后，本发明优选将所得加热分解产物进行冷却，得到所述砷化镓团簇。本发明对所述冷却没有特殊的限定，采用本领域技术人员熟知的方案冷却至室温即可。冷却过程中，生成的砷化镓团簇沉积在石墨纸上。After thermal decomposition, the present invention preferably cools the obtained thermal decomposition product to obtain the gallium arsenide clusters. The present invention has no special limitation on the cooling, and it can be cooled to room temperature using a solution well known to those skilled in the art. During cooling, the resulting gallium arsenide clusters are deposited on graphite paper.
本发明还提供了上述方案制备的砷化镓团簇，所述砷化镓团簇中镓元素与砷元素的质量比为1.5～3：1，优选为2～2.5:1。在本发明中，所述砷化镓团簇优选为片状结构，所述砷化镓团簇的尺寸优选为10～50μm，更优选为20～40μm，进一步优选为25～35μm；厚度优选为4～6μm，更优选为4.5～5μm。在本发明中，所述砷化镓团簇优选不带电。本发明的砷化镓团簇呈现出半导体性与半绝缘性，且拥有比富砷砷化镓团簇更低的电阻率。The present invention also provides the gallium arsenide cluster prepared by the above scheme, wherein the mass ratio of gallium element to arsenic element in the gallium arsenide cluster is 1.5-3:1, preferably 2-2.5:1. In the present invention, the gallium arsenide cluster is preferably a sheet structure, and the size of the gallium arsenide cluster is preferably 10-50 μm, more preferably 20-40 μm, further preferably 25-35 μm; the thickness is preferably 4 to 6 μm, more preferably 4.5 to 5 μm. In the present invention, the gallium arsenide cluster is preferably uncharged. The gallium arsenide cluster of the present invention exhibits semiconducting and semi-insulating properties, and has a lower resistivity than the rich gallium arsenide cluster.
本发明还提供了上述方案所述砷化镓团簇在计算机、发光二极管或电子通信中的应用。The present invention also provides the application of the gallium arsenide cluster described in the above solution in computers, light-emitting diodes or electronic communications.
下面结合实施例对本发明提供的砷化镓团簇及其制备方法和应用进行详细的说明，但是不能把它们理解为对本发明保护范围的限定。The gallium arsenide cluster provided by the present invention and its preparation method and application will be described in detail below in conjunction with the examples, but they should not be construed as limiting the protection scope of the present invention.
实施例1Example 1
采用金刚线将9.42g砷化镓头尾废料(镓与砷的含量为51.01wt％与48.04wt％)切割为10mm大小的方形晶体，在真空管式炉石英管内铺上一层厚度为0.3mm、含碳量为99.9wt％的石墨纸，并将装有砷化镓废料的石墨舟坩埚推入真空管式炉加热区；将炉内压强抽至1Pa，在1050℃温度下加热3h，冷却至室温后关闭真空泵，在石墨纸上收集得到1.84g富镓砷化镓团簇。Using a diamond wire, 9.42g of gallium arsenide head and tail waste (the content of gallium and arsenic is 51.01wt% and 48.04wt%) was cut into square crystals with a size of 10mm, and a layer of 0.3mm thick, Graphite paper with a carbon content of 99.9wt%, and push the graphite boat crucible containing gallium arsenide waste into the heating zone of the vacuum tube furnace; pump the pressure in the furnace to 1Pa, heat at 1050°C for 3h, and cool to room temperature Finally, the vacuum pump was turned off, and 1.84 g of gallium-rich gallium arsenide clusters were collected on graphite paper.
对实施例1制备的富镓砷化镓团簇进行不同倍率的电镜扫描分析，结果如图2～3所示。由图2～3可知，实施例1制备的富镓砷化镓团簇粒径大小在10～40μm范围内，厚度为5μm。Scanning electron microscopes with different magnifications were performed on the gallium-rich gallium arsenide clusters prepared in Example 1, and the results are shown in FIGS. 2-3 . It can be seen from FIGS. 2-3 that the gallium-rich gallium arsenide clusters prepared in Example 1 have a particle size in the range of 10-40 μm and a thickness of 5 μm.
对实施例1制备的富镓砷化镓团簇进行XRD分析，结果如图4所示。由图4可知，实施例1制备的富镓砷化镓团簇呈现出砷化镓半导体的物相。XRD analysis was performed on the gallium-rich gallium arsenide cluster prepared in Example 1, and the results are shown in FIG. 4 . It can be seen from FIG. 4 that the gallium-rich gallium arsenide cluster prepared in Example 1 presents a gallium arsenide semiconductor phase.
对实施例1制备的富镓砷化镓团簇进行X射线光电子能谱表征，结果如图5所示。由图5可知，实施例1制备的富镓砷化镓团簇中镓、砷元素质量占比分别为66.51％与33.49％，镓、砷质量比为1.98。X-ray photoelectron spectroscopy was performed on the gallium-rich gallium arsenide cluster prepared in Example 1, and the results are shown in FIG. 5 . It can be seen from FIG. 5 that the mass ratios of gallium and arsenic elements in the gallium-rich gallium arsenide cluster prepared in Example 1 are 66.51% and 33.49%, respectively, and the mass ratio of gallium and arsenic is 1.98.
对实施例1制备的富镓砷化镓团簇中的镓、砷元素进行X射线能谱分析，结果如图6～7所示。由图6～7可知，实施例1制备的砷化镓团簇以分子化合物形式存在，为中性砷化镓团簇，且团簇中镓、砷两种元素的价态与砷化镓晶体相比具有明显变化。X-ray energy spectrum analysis was performed on the gallium and arsenic elements in the gallium-rich gallium arsenide cluster prepared in Example 1, and the results are shown in FIGS. 6-7 . It can be seen from Figures 6-7 that the gallium arsenide clusters prepared in Example 1 exist in the form of molecular compounds, which are neutral gallium arsenide clusters, and the valence states of gallium and arsenic in the clusters are similar to those of gallium arsenide crystals. Significantly changed compared to .
实施例2Example 2
采用刚玉研钵将8.30g砷化镓头尾废料(镓与砷的含量为51.01wt％与48.04wt％)研磨至粒径小于1mm，在真空管式炉石英管内铺上一层厚度为0.3mm、含碳量为99.9wt％的石墨纸，并将装有砷化镓废料的石墨舟坩埚推入真空管式炉加热区；将炉内压强抽至1Pa，在1050℃温度下加热3h，冷却至室温后关闭真空泵，在石墨纸上收集得到1.87g富镓砷化镓团簇。Use a corundum mortar to grind 8.30 g of gallium arsenide head and tail waste (the content of gallium and arsenic is 51.01wt% and 48.04wt%) to a particle size of less than 1mm, and spread a layer of 0.3mm thick in the quartz tube of the vacuum tube furnace. Graphite paper with a carbon content of 99.9wt%, and push the graphite boat crucible containing gallium arsenide waste into the heating zone of the vacuum tube furnace; pump the pressure in the furnace to 1Pa, heat at 1050°C for 3h, and cool to room temperature Finally, the vacuum pump was turned off, and 1.87 g of gallium-rich gallium arsenide clusters were collected on graphite paper.
实施例2富镓砷化镓团簇中镓、砷元素质量占比分别为64.10％与35.90％，镓、砷质量比为1.79。Example 2 The mass proportions of gallium and arsenic elements in the gallium-rich gallium arsenide cluster are 64.10% and 35.90% respectively, and the mass ratio of gallium and arsenic is 1.79.
实施例3Example 3
采用刚玉研钵将12.37g砷化镓头尾废料(镓与砷的含量为51.01wt％与48.04wt％)研磨至粒径小于1mm，在真空管式炉石英管内铺上一层厚度为0.3mm、含碳量为99.9wt％的石墨纸，并将装有砷化镓废料的石墨舟坩埚推入真空管式炉加热区；将炉内压强抽至1Pa，在900℃温度下加热3h，冷却至室温后关闭真空泵，在石墨纸上收集得到0.705g富镓砷化镓团簇。Use a corundum mortar to grind 12.37g of gallium arsenide head and tail waste (the content of gallium and arsenic is 51.01wt% and 48.04wt%) to a particle size of less than 1mm, and spread a layer of 0.3mm thick in the quartz tube of the vacuum tube furnace. Graphite paper with a carbon content of 99.9wt%, and a graphite boat crucible filled with gallium arsenide waste is pushed into the heating zone of a vacuum tube furnace; the pressure in the furnace is pumped down to 1Pa, heated at 900°C for 3h, and cooled to room temperature Finally, the vacuum pump was turned off, and 0.705 g of gallium-rich gallium arsenide clusters were collected on graphite paper.
对比例1Comparative example 1
采用刚玉研钵将13.09g砷化镓头尾废料(镓与砷的含量为51.01wt％与48.04wt％)研磨至粒径小于1mm，在真空管式炉石英管内铺上一层厚度为0.3mm、含碳量为99.9wt％的石墨纸，并将装有砷化镓废料的石墨舟坩埚推入真空管式炉加热区；将炉内压强抽至1Pa，在850℃温度下加热3h，冷却至室温后关闭真空泵，在石墨纸上未收集到砷化镓团簇。Use a corundum mortar to grind 13.09g of gallium arsenide head and tail waste (the content of gallium and arsenic is 51.01wt% and 48.04wt%) to a particle size of less than 1mm, and spread a layer of 0.3mm in thickness in the quartz tube of the vacuum tube furnace. Graphite paper with a carbon content of 99.9wt%, and a graphite boat crucible filled with gallium arsenide waste is pushed into the heating zone of a vacuum tube furnace; the pressure in the furnace is pumped down to 1Pa, heated at 850°C for 3h, and cooled to room temperature After the vacuum pump was turned off, GaAs clusters were not collected on the graphite paper.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that, for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications can also be made. It should be regarded as the protection scope of the present invention.
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| CN1598016A (en) * | 2004-07-19 | 2005-03-23 | 昆明理工大学 | Process for comprehensive recovering gallium and arsenic from industrial waste material of gallium arsenide |
| CN201358292Y (en) * | 2009-03-02 | 2009-12-09 | 南京金美镓业有限公司 | Vacuum decomposer capable of decomposing gallium arsenicde into metallic gallium and metallic arsenic |
| CN115451700A (en) * | 2022-09-05 | 2022-12-09 | 昆明理工大学 | Device and method for recovering arsenic and gallium |
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| CN1598016A (en) * | 2004-07-19 | 2005-03-23 | 昆明理工大学 | Process for comprehensive recovering gallium and arsenic from industrial waste material of gallium arsenide |
| CN201358292Y (en) * | 2009-03-02 | 2009-12-09 | 南京金美镓业有限公司 | Vacuum decomposer capable of decomposing gallium arsenicde into metallic gallium and metallic arsenic |
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