CN116425108A - Preparation method of suspension film and suspension film - Google Patents
Preparation method of suspension film and suspension film Download PDFInfo
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- CN116425108A CN116425108A CN202310425298.XA CN202310425298A CN116425108A CN 116425108 A CN116425108 A CN 116425108A CN 202310425298 A CN202310425298 A CN 202310425298A CN 116425108 A CN116425108 A CN 116425108A
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- Prior art keywords
- photoresist
- film
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- suspension
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- 239000000725 suspension Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 73
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000004528 spin coating Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000001312 dry etching Methods 0.000 abstract description 3
- 238000001039 wet etching Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W10/00—Technologies for wastewater treatment
- Y02W10/10—Biological treatment of water, waste water, or sewage
Abstract
The invention provides a preparation method of a suspension film and the suspension film, wherein the method comprises the steps of photoresist spin coating: spin coating photoresist on a clean and flat substrate; placing a copper net: placing a copper mesh for a transmission electron microscope on the surface of the photoresist, and standing for a period of time; and (3) curing: placing the copper mesh, the photoresist and the substrate on a hot plate for curing at a certain temperature; and (3) a thin film sputtering step: sputtering a film with a certain thickness on the surfaces of the solidified copper net, the photoresist and the substrate; a suspension film acquisition step: and (3) placing the obtained film, copper net, photoresist and substrate in photoresist stripping solution, and dissolving the photoresist to obtain a suspension film. The invention solves the problems of complex process, strong randomness and the like of the prior method and obtains the suspension film with controllable thickness. The copper net is used as a supporting structure and combined with photoresist removal, so that the problem of random scooping of the suspended film in the prior art is solved; the method has simple flow, does not need dry etching and wet etching, and is suitable for preparing the batch suspension film of various materials.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a preparation method of a suspension film and the suspension film.
Background
With the development of semiconductor process technology, in particular, the rapid development of micro-electro-mechanical systems (MEMS), the demand for suspended structures is increasing, and particularly, the demand for suspended films is increasing in recent years due to the development of three-dimensional superstructures.
The preparation method of the suspended film is mainly based on the semiconductor process technology, and is completed through graphic design, photoetching, dry etching and wet etching and other auxiliary processes. The method has long process flow and complex process, so the method has relatively long time, high cost and lower yield. In addition, in recent years, a relatively simple gold suspension film is produced by dispersing a gold film of a certain thickness and size in a solvent such as water, then scooping the dispersed gold film in the solution using a copper mesh for transmission electron microscope test to obtain a suspension film, and then performing processing. The method has the advantages of relatively low cost, strong randomness, limited applicable film, poor compatibility with other process technologies, inconvenient operation and difficult popularization.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a preparation method of a suspension film and the suspension film.
The preparation method of the suspension film provided by the invention comprises the following steps:
photoresist spin coating: spin coating photoresist on a clean and flat substrate;
placing a copper net: placing a copper mesh for a transmission electron microscope on the surface of the photoresist, and standing for a period of time;
and (3) curing: placing the copper mesh, the photoresist and the substrate on a hot plate for curing at a certain temperature;
and (3) a thin film sputtering step: sputtering a film with a certain thickness on the surfaces of the solidified copper net, the photoresist and the substrate;
a suspension film acquisition step: and (3) placing the obtained film, copper net, photoresist and substrate in photoresist stripping solution, and dissolving the photoresist to obtain a suspension film.
Preferably, the substrate is a silicon substrate or a glass substrate.
Preferably, the photoresist is a positive photoresist.
Preferably, the rest time is 0.5 to 30 minutes.
Preferably, the curing temperature is 50-150 ℃.
Preferably, the film is a metal film, a metal oxide film, a semiconductor film or a dielectric film.
Preferably, the sputtered film has a thickness of 50nm to 300nm.
Preferably, the photoresist stripper is acetone or isopropanol.
Preferably, the method further comprises a cleaning step: and cleaning the substrate to obtain a clean and flat substrate.
According to the suspension film provided by the invention, the preparation method of the suspension film is adopted.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a simple and controllable preparation method of a suspended membrane, which solves the problems of complex process, strong randomness and the like of the existing method and obtains the suspended membrane with controllable thickness.
2. According to the invention, the copper net is used as a supporting structure and is combined with photoresist removal, so that the problem of random scooping of the suspended film in the prior art is solved;
3. compared with the traditional method, the method has simple flow, does not need dry etching and wet etching, and is suitable for preparing the batch suspension film of various materials.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, given with reference to the accompanying drawings in which:
FIG. 1 is a flow chart of a suspension membrane preparation.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will assist those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any way. It should be noted that variations and modifications could be made by those skilled in the art without departing from the inventive concept. These are all within the scope of the present invention.
As shown in fig. 1, the preparation method of the suspension film and the suspension film provided by the invention comprise the following cleaning steps: cleaning the substrate to obtain a clean and flat substrate; photoresist spin coating: spin coating photoresist on a clean and flat substrate; placing a copper net: placing a copper mesh for a transmission electron microscope on the surface of the photoresist, and standing for a period of time; and (3) curing: placing the copper mesh, the photoresist and the substrate on a hot plate for curing at a certain temperature; and (3) a thin film sputtering step: sputtering a film with a certain thickness on the surfaces of the solidified copper net, the photoresist and the substrate; a suspension film acquisition step: and (3) placing the obtained film, copper net, photoresist and substrate in photoresist stripping solution, and dissolving the photoresist to obtain a suspension film.
Further, the substrate is a silicon substrate or a glass substrate. The photoresist is a positive photoresist. The standing time is 0.5-30 minutes. The curing temperature is 50-150 ℃. The film is a metal film, a metal oxide film, a semiconductor film or a dielectric film. The thickness of the sputtered film is 50nm-300nm. The photoresist stripping solution is acetone or isopropanol.
Example 1:
step S1: spin coating AZ4300 photoresist on the silicon wafer;
step S2: placing a copper mesh for a transmission electron microscope on the surface of the photoresist in the step S1, and standing for 0.5 minute;
step S3: placing the copper mesh/photoresist/silicon substrate obtained in the step S2 on a hot plate at 90 ℃ and heating for 1 minute for curing;
step S4: depositing a 50nm gold film on the surface of the solidified copper mesh/photoresist/silicon substrate by adopting electron beam evaporation;
step S5: and (3) placing the gold film/copper net/photoresist/silicon substrate obtained in the step (S4) in acetone, and dissolving the photoresist to obtain a gold suspension film with the thickness of 50 nm.
Example 2:
step S1: spin coating AZ4620 photoresist on the silicon wafer;
step S2: placing a copper mesh for a transmission electron microscope on the surface of the photoresist in the step S1, and standing for 15 minutes;
step S3: placing the copper mesh/photoresist/silicon substrate obtained in the step S2 on a hot plate at 65 ℃ for heating for 3 minutes, and then heating to 110 ℃ for heating for 15 minutes for curing;
step S4: depositing an ITO film of 300nm on the surface of the solidified copper mesh/photoresist/silicon substrate by magnetron sputtering;
step S5: and (3) placing the ITO film/copper net/photoresist/silicon substrate obtained in the step (S4) in acetone, and dissolving the photoresist to obtain the ITO suspension film with the thickness of 150 nm.
Example 3:
step S1: spin coating PMMA photoresist on the glass sheet;
step S2: placing a copper mesh for a transmission electron microscope on the surface of the photoresist in the step S1, and standing for 5 minutes;
step S3: placing the copper mesh/photoresist/glass substrate obtained in the step S2 on a hot plate at 90 ℃ and heating for 10 minutes for curing;
step S4: depositing a 100nm silicon nitride film on the surface of the solidified copper mesh/photoresist/glass substrate by adopting a plasma enhanced chemical vapor deposition method;
step S5: and (3) placing the silicon nitride film/copper mesh/photoresist/glass substrate obtained in the step (S4) in isopropanol, and dissolving the photoresist to obtain a 100nm thick silicon nitride suspension film.
Example 4:
step S1: spin-coating AZ4903 photoresist;
step S2: placing a copper mesh for a transmission electron microscope on the surface of the photoresist in the step S1, and standing for 30 minutes;
step S3: placing the copper mesh/photoresist/glass substrate obtained in the step S2 on a hot plate at 50 ℃ for heating for 10 minutes, heating for 60 minutes at 80 ℃, and heating for 15 minutes at 150 ℃ for curing;
step S4: depositing a 150nm silicon oxide film on the surface of the solidified copper mesh/photoresist/glass substrate by adopting a plasma enhanced chemical vapor deposition method;
step S5: and (3) placing the silicon oxide film/copper mesh/photoresist/glass substrate obtained in the step (S4) in isopropanol, and dissolving the photoresist to obtain a 150 nm-thick silicon oxide suspension film.
In the description of the present application, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, merely to facilitate description of the present application and simplify the description, and do not indicate or imply that the devices or elements being referred to must have a specific orientation, be configured and operated in a specific orientation, and are not to be construed as limiting the present application.
The foregoing describes specific embodiments of the present invention. It is to be understood that the invention is not limited to the particular embodiments described above, and that various changes or modifications may be made by those skilled in the art within the scope of the appended claims without affecting the spirit of the invention. The embodiments of the present application and features in the embodiments may be combined with each other arbitrarily without conflict.
Claims (10)
1. The preparation method of the suspension film is characterized by comprising the following steps of:
photoresist spin coating: spin coating photoresist on a clean and flat substrate;
placing a copper net: placing a copper mesh for a transmission electron microscope on the surface of the photoresist, and standing for a period of time;
and (3) curing: placing the copper mesh, the photoresist and the substrate on a hot plate for curing at a certain temperature;
and (3) a thin film sputtering step: sputtering a film with a certain thickness on the surfaces of the solidified copper net, the photoresist and the substrate;
a suspension film acquisition step: and (3) placing the obtained film, copper net, photoresist and substrate in photoresist stripping solution, and dissolving the photoresist to obtain a suspension film.
2. The method of claim 1, wherein the substrate is a silicon substrate or a glass substrate.
3. The method of claim 1, wherein the photoresist is a positive photoresist.
4. The method for producing a suspended membrane according to claim 1, wherein the standing time is 0.5 to 30 minutes.
5. The method of claim 1, wherein the curing temperature is 50-150 ℃.
6. The method of claim 1, wherein the film is a metal film, a metal oxide film, a semiconductor film, or a dielectric film.
7. The method for producing a suspended film according to claim 1, wherein the thickness of the sputtered film is 50nm to 300nm.
8. The method of claim 1, wherein the photoresist stripper is acetone or isopropanol.
9. The method for preparing a suspended membrane according to claim 1, further comprising a cleaning step of: and cleaning the substrate to obtain a clean and flat substrate.
10. A suspension membrane, characterized in that a method for producing a suspension membrane according to any one of claims 1 to 9 is employed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310425298.XA CN116425108A (en) | 2023-04-17 | 2023-04-17 | Preparation method of suspension film and suspension film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310425298.XA CN116425108A (en) | 2023-04-17 | 2023-04-17 | Preparation method of suspension film and suspension film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116425108A true CN116425108A (en) | 2023-07-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310425298.XA Pending CN116425108A (en) | 2023-04-17 | 2023-04-17 | Preparation method of suspension film and suspension film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116425108A (en) |
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2023
- 2023-04-17 CN CN202310425298.XA patent/CN116425108A/en active Pending
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