CN116420224A - Air-tight connection device, housing and method for producing the same - Google Patents
Air-tight connection device, housing and method for producing the same Download PDFInfo
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- CN116420224A CN116420224A CN202180075351.7A CN202180075351A CN116420224A CN 116420224 A CN116420224 A CN 116420224A CN 202180075351 A CN202180075351 A CN 202180075351A CN 116420224 A CN116420224 A CN 116420224A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
- B23K26/206—Laser sealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Joining Of Glass To Other Materials (AREA)
- Ceramic Products (AREA)
- Making Paper Articles (AREA)
Abstract
The invention discloses an airtight connection device, comprising: a first metal substrate, a second substrate, at least some areas and/or at least a part of the second substrate being designed to be transparent with respect to at least one wavelength range, wherein the first substrate is provided with a contact surface adjacent to the contact surface of the second substrate, the gas-tight connection device further having at least one laser bonding wire or attachment points for directly bonding the first metal substrate to the second substrate on or in the contact surface, wherein the laser bonding wire or attachment points extend on the one hand into the first substrate and on the other hand into the second substrate and fuse the at least two substrates directly to each other.
Description
Technical Field
The present invention relates to an airtight connection device, a housing, a method of producing an airtight sealed composite material, and an airtight connection device produced by the method.
Background
In principle, it is known to join together a plurality of components by means of different laser methods. For example, the glass-to-glass transition of a gas-tight connection is known from the applicant's european patent document EP 3012059 B1. This document discloses a method for producing transparent components for protecting optical components, a novel laser method being proposed.
Joining methods involving the interconnection of dissimilar materials are of increasing interest. Among these, metal-to-glass conversion is of particular interest, as specific combinations of metals and glass have a variety of possible applications. For example, improvements and new applications in the biophysical and technical medical fields, in particular in the field of biological processors, and in aerospace technology, can be realized virtually.
If a hermetically sealed enclosure is constructed, one or more components inside the enclosure may be protected therein from adverse environmental conditions. For example, sensitive electronics, circuitry, or e.g. sensors, may be arranged in a hermetically sealed enclosure in order to construct and use a medical implant (e.g. in the heart area, retina, or typically in a biological processor). It can also find application in MEMS (microelectromechanical systems), in sensor systems such as barometers, blood gas sensors or glucose sensors, and in electronic applications such as in particular in the field of watch production, or in wearable devices in general and other devices with waterproof or pressure-protection configurations. It can also find a wide application in the field of aeronautics, high temperature applications, electric car fields, for example in the production of mobile batteries, and in the field of micro-optics.
The use of different materials presents problems compared to two similar components being connected to each other: the two parts to be joined are poorly adhered to each other or in fact they must be bonded together.
Disclosure of Invention
The object of the present invention is therefore to provide a gas-tight connection between two components of different materials, wherein this has not been possible to achieve successfully up to now, in particular for metals. It is also an object of the present invention to provide a housing in which two parts of different materials are connected to each other. In particular, a part of one aspect of the invention is the ability to make a sufficiently strong air-tight connection or housing to ensure that the two parts do not separate from each other or from each other with only a small force. Another part of an aspect of the invention is that possible material damage due to the application of certain bonding methods can be investigated and that a channel can be provided for inspection, and that such possible damage should also be avoided or reduced. It is therefore a possible object of the present invention to provide a more reliable, more durable airtight connection device or housing.
The airtight connection device according to the present invention comprises: a first metal substrate and a second substrate that is transparent in at least some areas and/or at least partially for at least one wavelength range. The first substrate is disposed adjacent to the contact region of the second substrate via the contact region.
In the context of the present application, a contact area refers to a region or a part of a surface, or the entire side, of a respective substrate, by means of which region or a part of the surface or the entire side the respective substrate is placed or arranged adjacent to the respective other substrate. Typically, the substrates are arranged adjacent to each other or one on top of the other. When two substrates touch each other directly and immediately, a touch contact area is formed. The touching contact surface is thus, for example, a subregion of the contact region in which the distance between the two substrates is too small to be measured visually anymore.
Typically, at least two substrates are first arranged one on top of the other, for example stacked one on top of the other, so that a connection is formed. Then, the upper portion, typically the second substrate, is pressed against the lower portion, typically the first metal substrate, due to gravity. In this case, the direction above or below is merely illustrative, and the arrangement of the substrates can of course assume any orientation in space, even if adjacent arrangements are not out of the scope of protection. The two substrates are usually arranged with their more extended sides resting against each other.
For example, two substrates have a pane shape or planar shape, so that each substrate has at least one larger planar side, which is preferably aligned in the direction of the respective other substrate.
The hermetic connection means further comprises at least one laser bonding wire or a plurality of bonding points for bonding said first metal substrate directly and immediately to said second substrate on or in the contact area. The laser bond wire or bonds extend partially into the first substrate and partially into the second substrate and directly fusion bond at least two substrates to one another. In other words, the two substrates are bonded to each other in the laser bonding wire.
Each substrate has a planar form in the contact region. In this respect, an absolutely planar surface can only be realized theoretically, since, depending on the dimensions considered, depressions, projections or curves or all of the previously mentioned can be found even for polished surfaces. Therefore, it is difficult to establish touch contact over the entire surface area. In contrast, the substrate is domed, sloped, curved, or concave or convex, even to a small extent.
For example, when the average distance between the first substrate and the second substrate is less than or equal to 1 μm, preferably less than or equal to 0.5 μm, more preferably less than or equal to 0.2 μm, it may be defined as a touch contact area.
Within the scope of the present application, it has proved to be advantageous if the distance between the first substrate and the second substrate is small. For example, it is advantageous if the surface in the contact area of the first substrate and/or the surface in the contact area of the second substrate is polished before one substrate is arranged on the other substrate, in order to further reduce the average distance between the substrates. For the first metal substrate, it may be advantageous when the absolute height above the average surface of the metal substrate does not exceed 0.5 μm.
This is therefore surprising, since the polished surface of the metal substrate is in principle disadvantageous for laser bonding methods, since more reflections occur on the polished surface, so that precise positioning and power deposition for the bonding operation becomes more difficult, or the bonding operation may therefore not be possible. However, in particular for a first metal substrate with polished contact areas, this may result in a good connection arrangement firmly bonded to each other.
There is a mixing zone in the laser bonding wire or bonding points, where the material of the second substrate and the material of the first substrate are fused.
In the mixing zone, the metallic material of the first substrate may have entered the second substrate, the material of the second substrate may have entered the first metallic substrate as well, and particularly preferably, in the mixing zone, it is possible to let the metallic material of the first substrate have entered the second substrate and let the material of the second substrate have entered the metallic substrate.
The mixing zone has a thickness measured in a direction perpendicular to the contact area, wherein the mixing zone may have a thickness of preferably at least 1 μm, more preferably 2 μm or more, more preferably 5 μm or more.
The mixing zone preferably extends into the second substrate to a value of 1 μm or more. Preferably, the value of the extension of the mixing zone into the second substrate is 5 μm or more. More preferably, the mixing zone extends in the second substrate as far as the resolidification zone such that the mixing zone overlies the resolidification zone. For example, the mixing region extends into the second substrate approximately the same distance as the first substrate. This initially appears to be surprising because, for example, in the case of metal-glass composites, the CTE of the first substrate is 3 to 10 times higher than the CTE of the glass. The heat capacity and thermal conductivity of the metal are typically significantly higher than the heat capacity and thermal conductivity of the second substrate. However, it has been shown that the mixing zone can be advantageously arranged in the laser bonding wire or bonding point such that it extends substantially the same distance into the first substrate as into the second substrate, thereby improving the bonding connection.
The mixing zone has a width, wherein the width of the mixing zone is preferably greater than the thickness of the mixing zone in the second substrate. The width of the mixing zone may also be 50% or more greater than the thickness of the mixing zone, more preferably 100% or more greater than the thickness of the mixing zone.
In this respect, the width of the mixing zone may be measured, for example, at the contact area between the first substrate and the second substrate, and in a direction parallel to the contact area and perpendicular to the laser bonding wire.
The at least one laser bond line or the plurality of bond points may further comprise a resolidified region, wherein the resolidified region has a thickness measured in a direction perpendicular to the contact region. The thickness of the resolidified region may preferably be less than or equal to 20 μm, preferably less than or equal to 10 μm, more preferably less than or equal to 5 μm.
The depth to which the resolidified region extends to the second substrate may also be less than or equal to 20 μm, preferably less than or equal to 10 μm, even more preferably less than or equal to 5 μm.
The resolidified areas of the at least one laser bond line or the plurality of bond points may extend along the laser bond line or be disposed in the respective bond points. At the contact area between the first substrate and the second substrate and in a direction parallel to the contact area, the resolidification area may have a width of 10 μm, for example may be ±5 μm. This width may be preferably 20 μm.+ -. 10. Mu.m, more preferably 30 μm.+ -. 10. Mu.m.
The resolidified region may also have a width that is greater than the thickness of the resolidified region in a direction parallel to the contact region and perpendicular to the laser bond line.
It is particularly advantageous that the resolidified area is as small as possible, i.e. the parameters by means of the joining laser radiation can be selected such that the resolidified area is as small as possible. The resolidified areas are not useful for the bonding operation because there are no materials that cause an interlocking engagement or bond between the first and second substrates to be mixed therein. Therefore, the resolidified areas absorb laser energy without aiming at improving adhesion. Meanwhile, when the resolidification region is cooled, cracks and/or holes or cavities are generated in the resolidification region, which may be interpreted as that the material of the corresponding substrate expands when heated, thus generating stress, and contracts again when cooled.
The mixing zone is also set as large as possible, while the resolidification zone is set as small as possible. Preferably, the height of the mixing zone is at least 1/5 the height of the resolidification zone, more preferably 1/2 the height of the resolidification zone, more preferably the mixing zone is as high as the resolidification zone. For example, in this aspect, assuming a height of the mixing zone of 5 μm, if the height of the mixing zone is 1/5 of the height of the resolidification zone, the height of the resolidification zone above the mixing zone is 25 μm. If the height of the mixing zone is 10 μm and the height of the resolidification zone of the second substrate thereon is also 10 μm, the height of the resolidification zone corresponds to the thickness of the mixing zone. The mixing zone may also have a thickness greater than the resolidified zone, for example a thickness 1.5 times or more, for example 5 times, the thickness of the resolidified zone.
The first metal substrate also typically has a resolidification zone below the mixing zone. So far, it has not been possible to declare the dimensions of the resolidified area of the first substrate as being detrimental to the bonding operation as in the case of the second substrate. Conversely, it may be shown that the material of the second substrate may penetrate the resolidified area of the first substrate, thereby forming dendrites, that is, the anchored connection of the second substrate on the first substrate may be achieved by one or more dendrites, wherein the dendrites may extend into the resolidified area of the first substrate.
In the mixing zone, the material of the first substrate and the material of the second substrate may be arranged such that a form-fitting interlocking engagement is formed between the material of the first substrate and the material of the second substrate. The gas-tight connection means may comprise an interlocking structure fused between the first metal substrate and said second substrate. In the fused interlocking structure, the material of the respective other substrate can be pushed out, pushed in or undercut, thus significantly reinforcing the adhesive bond of the air-tight connection device. Such fused interlocking structures provide a form-fitting bond between the two substrates, which is particularly advantageous when the material bond between the different materials may only provide a small retention force or a weak material bond. The interlocking structure between the first and second substrates acts as a microscopic zipper fastener.
In the mixing zone, the metallic material of the metallic substrate may be present in the form of droplets and/or dendrites, wherein the arrangement of the droplets and/or dendrites causes bonding between the first substrate and the second substrate to solidify.
It is further noted that the metallic material of the metallic substrate and/or the material of the second substrate may also penetrate the at least one resolidified area, in particular in the form of droplets, melted portions and/or dendrites, and cause bonding between the first substrate and the second substrate to solidify. In other words, the material of the component to be joined, i.e. the material of the first substrate and/or the material of the second substrate, and/or the provision and/or alignment of the beam generator is selected to adjust the joining process such that the metallic material of the metallic substrate and/or the material of the second substrate penetrates the resolidified areas allocated to the respective other substrate.
For example, the material of the first substrate and/or the second substrate may have amorphous regions or zones as a result of or after the introduction of the laser bonding wires. Such amorphous regions, i.e., amorphous metal material, for example, may further enhance interlocking engagement.
The contact region of the first substrate may have at least one touch contact region in which the first substrate is in planar touch contact with the second substrate. The average distance between the touch contact area and the first and second substrates may in particular be less than or equal to 1 μm, preferably less than or equal to 0.5 μm, more preferably less than or equal to 0.2 μm. In this case, very small pockets of air or impurities (e.g., dust particles or irregularities resulting from polishing operations) between the substrate layers may not be avoided for technical or other reasons, for example. This may also be due to possible non-uniformities even into micro-areas between the substrate layers or on the surface of the substrate layers. When contact between the two substrates can be established over their entire surface area, the touch contact area can correspond to the contact area.
The laser bonding wire may connect the first substrate to the second substrate such that the two substrates can be separated from each other only when a holding force is applied. If the holding force is greater than the force required to break the second substrate, the joint between the two substrates can also be obtained to such a strong extent that the separation of the two substrates from each other can only be achieved by breaking the second substrate. The holding force of the second substrate on the first substrate may be, for example, greater than 10N/mm 2 Preferably greater than 25N/mm 2 More preferably greater than 50N/mm 2 Even more preferably greater than 75N/mm 2 And ultimately most preferably greater than 100N/mm 2 。
The first substrate may be characterized as having a flat form on the contact side, that is to say as having a specific planar form. The contact side of the first substrate may be polished.
In this case, the average roughness Ra of the contact side of the first substrate may be less than or equal to 0.5 μm, preferably less than or equal to 0.2 μm, more preferably less than or equal to 0.1 μm, even more preferably less than or equal to 50nm, and finally preferably less than or equal to 20nm.
The second substrate may be characterized by having a flat form, in particular a planar form, and more particularly, having an average roughness Ra of less than or equal to 0.5 μm at the contact area.
The laser bond wire is introduced by the bond laser. For example, if the bonding laser is an infrared laser, the wavelength is preferably 1030nm. For example, an ultrashort pulse laser having a pulse length in the range of 50ps or less, preferably 20ps or less, more preferably 10ps or more preferably 1ps or less may be used.
The joining laser has a beam focus. The beam focus may have a beam waist width 2w0. For the bonding process, the bonding laser also has a beam width of 2W Laser light Which may be greater than or equal to the beam waist width 2w0. The focal plane for introducing the laser bonding wire may be displaced distally relative to the bonding plane. If the focal plane for introducing the laser bonding wire is shifted distally, the beam width is 2W Laser light Particularly in this case greater than the beam waist width 2w0. In particular, when a laser bonding wire is introduced, the focal plane is in the first substrate. The focal plane is preferably shifted distally by 10 μm + -10 μm, more preferably 20 μm + -10 μm into the first substrate.
Beam width in the joining plane 2W Laser light Preferably 4 μm.+ -. 1. Mu.m, more preferably 4 μm.+ -. 2. Mu.m, still more preferably 4 μm.+ -. 3. Mu.m. This can be achieved, for example, when introducing the laser bonding wire, the focal plane being in the first substrate, that is to say, for example, displaced distally by 10 μm±10 μm or 20 μm±10 μm into the first substrate. Alternatively or additionally, the laser beam may be widened or narrowed upstream of an inscription lens (inscription lens), for example due to an aperture or telescope, in order to set the beam width 2W laser to the desired width.
Preferably, the first substrate is entirely composed of a metallic material. In this case, the first substrate includes a metal within the definition of the periodic table of elements.
The first substrate may include or consist of at least one of molybdenum, tungsten, silicon, platinum, silver, or gold. The first substrate may also comprise an alloy.
In particular, the first substrate may include or consist of at least one of carbon, copper, manganese, chromium, magnesium, cobalt, nickel, tin, zinc, niobium, palladium, rhenium, indium, tantalum, titanium, or iridium.
The second substrate is preferably a transparent substrate. The second substrate may comprise or consist of glass, glass-ceramic, silicon, sapphire, or a combination of the foregoing materials. The second substrate may also comprise or consist of a ceramic material, in particular an oxide ceramic material.
The second substrate may include or consist of at least one of quartz glass, borosilicate glass, aluminosilicate glass, glass-ceramic (e.g., zerodur, ceran or Robax), optical ceramic (e.g., alumina, spinel, pyrochlore, or aluminum oxynitrite), calcium fluoride crystal, or chalcogenide glass.
In an improved or alternative arrangement, the gas-tight connection means may comprise a first metal substrate and a second substrate, the second substrate being at least partially transparent to at least one wavelength range and/or at least in some areas. In this case, the first substrate is arranged adjacent to the contact region of the second substrate through the contact region. The gas-tight connection device further comprises at least one spacer for establishing a distance between the first substrate and the second substrate.
A gasket may be interposed or included between the first metal substrate and the second substrate. For example, in this case, the first substrate may be in contact with the second substrate via a spacer. In other words, for example, the pads may be arranged in certain areas on one of the contact areas such that the respective other substrate is in contact or touching contact with the pads, whereas the distance remaining between the contact area of the first substrate and the contact area of the second substrate is the distance outside the pads, e.g. the pad thickness.
Thus, the first substrate may be in contact or touch contact with the second substrate via the spacer. The spacer may be arranged between the first substrate and the second substrate, respectively.
The gasket may be composed of a metallic material. For example, the spacer may be in the form of a coating on the first substrate or on the second substrate. The spacer may also be integrally formed with the first substrate.
The spacer may be integrally formed with the surface of the first substrate and/or the second substrate, for example, to form an offset or protrusion thereon. For example, if the area of the contact area of the first substrate or the second substrate is not polished and thus the protrusions remain, a pad can be generated during polishing. In particular, in the case of sapphire as second substrate, for example in particular in the form of clock glass, in the case of sapphire glass which has been subjected to a typically complex polishing, the sapphire glass can be subjected to an additional or modified polishing in combination when the polishing step is carried out, so that no additional working step is required for production.
The spacer may be made as a thin film of, for example, aluminum, and may be secured to the first substrate or the second substrate. The spacer may be sputtered, may comprise a directly deposited layer of photolithographic glass, may be printed on the first substrate or the second substrate, for example by means of ink jet printing, or may be made by means of 3D printing.
The pads may extend at least along the laser bond line or in the bond site area, may extend outside the laser bond line or outside the bond site area, or may be formed over the entire surface area.
In one example, the pad is formed such that the first metal substrate is polished, but not polished to be entirely flat, at its contact area; instead, a spacer, for example, a mesh, is retained in the contact area of the first substrate. Thus, the spacer is integrally formed with the first substrate and is a bump of the contact area of the first substrate. Preferably, the pads may be arranged at the locations where the laser bonding wires are introduced. This may further reduce the distance remaining between the substrates in the region of the laser bond wire and/or improve the bonding result or improve the adhesion of the two substrates to each other.
The spacer may have a thickness of at least 5 μm, more preferably a thickness of at least 10 μm, and even more preferably a thickness of at least 20 μm. This is advantageous in particular when the shim is inserted in the region of the laser bonding wire.
If the spacer is not inserted in the area where the laser bonding wire is to be placed, but, for example, adjacent thereto, it is advantageous if the thickness of the spacer does not exceed 5 μm. For example, the spacer may have a thickness preferably greater than 1 μm, preferably 2 to 3 μm or more.
In the context of the present invention, there is also disclosed an airtight connection device comprising: a first metal substrate, a second substrate that is transparent in at least some regions and/or at least partially to at least one wavelength range, wherein the first substrate is arranged adjacent to a contact region of the second substrate by a contact region; and having at least one flow region for receiving molten material from a laser bonding wire or bonding point, wherein the laser bonding wire or bonding points are used to directly melt bond a first metal substrate to the second substrate.
In this aspect, preferably, at least one flow region is arranged adjacent to the laser bonding line or bonding points. In other words, the flow region is arranged such that the molten material can flow in, in particular at the moment of the creation of the laser joining line. For example, the flow region may be arranged around and thus in communication with the laser joining line, whereby material heated to a molten state on the laser joining line may slightly flow into the flow region. In this process, the molten material may follow a pressure gradient during the flow operation.
For example, expansion, such as thermal expansion, may be exhibited when laser bonding wires of the first substrate and/or the second substrate are introduced. Since the laser heats the material only locally, that is, the material remains solid around the laser bond line, large stresses may develop between the material on the laser bond line and the material near the laser bond line and cracks, such as stress cracks or cavities, may develop. By providing a flow region, molten material may flow into the flow region, thereby reducing the occurrence of cracks or cavities.
More preferably, at least one flow region, or buffer region or relaxation region, is provided between the first substrate and the second substrate, for example at the contact region.
For example, when the second substrate is arranged on the first substrate, for example when one or both of the two substrates has no plane in the area of the contact area or on the side facing the respective other substrate, at least one flow area may be formed in the contact area.
It is particularly preferred that the flow area is formed in that it comprises a gasket allowing the two contact areas to overlap each other at a defined distance from each other when the second substrate is arranged on the first substrate. In this process, the cavities formed between the first and second substrates in the areas without shims may be preconfigured or arranged so that they may serve as flow areas for material flow during the laser bonding operation. Thus, the generated laser bonding wire is subjected to less stress, and thus may provide stronger or higher adhesion, while the stress may be maintained outside the second substrate, that is, stress cracks or cavities formed in the second substrate.
If a region where the molten materials of the two substrates are mixed together is designated as a mixed region, and a region adjacent thereto of the laser bonding wire is designated as a resolidification region, specifically, a resolidification region is a problem that may be induced by the laser bonding wire to generate cracks or cavities. This is particularly disadvantageous when the second substrate is a single crystal, for example sapphire, in which damage due to the introduction of the laser bond wires cannot be repaired by the subsequently introduced non-uniform, subsequent laser bond wires. Thus, the inventive concept, particularly the flow zone and/or gasket, may keep the resolidification zone as small as possible, but at the same time allow the mixing zone to be as large as possible, or to extend maximally into both substrates. Ideally, the mixing zone is as large as the resolidification zone such that the mixing zone is fully superimposed on the resolidification zone and no resolidification zone is noticeable. In that case, the adhesion of the two substrates to each other is particularly good, while minimizing the occurrence of cracks or cavities.
An airtight connection device includes: a first metal substrate, a second substrate that is transparent in at least some regions and/or at least partially to at least one wavelength range, wherein the first substrate is arranged adjacent to a contact region of the second substrate by a contact region; a first laser bond wire or a first set of bond points for directly and immediately bonding the first metal substrate to the second substrate on or within the contact region, wherein a portion of the first laser bond wire or the first set of bond points extends into the first substrate and another portion extends into the second substrate and at least two substrates are directly fusion bonded to each other; a second laser bond wire or a second set of bond points for directly and immediately bonding the first metal substrate to the second substrate on or within the contact area, wherein the second laser bond wire or the second set of bond points extends into the first laser bond wire or the first set of bond points and modification or improvement of material mixing is achieved by the first laser bond wire or the first set of bond points.
Such a second laser bonding wire may be achieved by resetting the same laser to a previous bonding position or a similar bonding position, i.e. a new laser aggregation overlapping an already set or already activated focus. The introduction of the second laser bonding wire, in particular the introduction of the still warm or hot first laser bonding wire, can also be produced by using double focusing on the laser generator. For example, a beam splitter or diffraction grating, or two laser generators may be used. In this case, the second laser bonding wire is introduced into the still warm, in particular still molten, material of the first and second substrate.
For example, when the laser generator has a burst function, the effect can also be produced that laser energy is introduced into the still warm, even still molten material, and in this way overlapping laser spots can be introduced into the device in a short time sequence. In other words, another focal point may be activated, or a second laser bonding wire may be introduced at the focal point of the first laser bonding wire at defined time intervals and/or at defined spatial distances.
In the context of the present invention, a hermetically sealed enclosure, in particular with a hermetically sealed connection device as described in detail above, is also disclosed. The hermetically sealed enclosure includes: a first metal substrate, a second substrate that is transparent in at least some areas and/or at least partially for at least one wavelength range, wherein the first substrate is arranged adjacent to the contact area of the second substrate by the contact area.
The housing further comprises at least one functional area, in particular a cavity, arranged between the first substrate and the second substrate. The housing further comprises at least one laser bonding wire or a plurality of bonding points for bonding the first substrate directly and immediately to the second substrate on or in the contact area, in particular around the functional area, for hermetically sealing the functional area. In this regard, a portion of the laser bond wire or bond sites extends into the first substrate and another portion extends into the second substrate, and at least two substrates are directly, fusion bonded to one another by the laser bond wire or bond sites.
In hermetically sealed enclosures, the laser bond line of the enclosure may be formed around the functional area to seal it. Additionally or alternatively, the distance between the laser bonding line and the first and second substrates is constantly less than 0.75 μm, preferably less than 0.5 μm, more preferably less than 0.2 μm.
The functional area of the housing may have a hermetically sealed accommodation chamber for accommodating an object to be accommodated, such as an electronic circuit, a sensor or a MEMS.
The gas-tight connection means or the gas-tight sealed housing may also have a first cover layer or coating on the first metal substrate, at least on the laser bonding wire or on the area of the plurality of bonding points on the side facing the second substrate. The laser bonding wire or bonding sites are particularly useful for bonding a first metal substrate directly and immediately to a second substrate. In this case, it is preferable to apply a first cover layer or coating on the first metal substrate before hermetically connecting at least two substrates to each other by direct bonding.
For the gas-tight connection or the gas-tight sealing housing, the material of the first substrate and the material of the first cover layer or coating may also be mixed in the mixing zone and/or at least in the area of the first substrate close to the surface.
Furthermore, it is particularly possible for the gas-tight connection or the gas-tight sealing housing to change the morphology of the microstructure in the mixing region by means of the material of the first cover layer or coating. In the mixing zone, an alloy of materials comprising at least a first metal substrate and a first cover layer or coating may be formed at least in certain areas.
Preferably, the alloy may form a eutectic.
The first metal substrate of the sealing connection or the sealing housing may also comprise or consist of iron, steel or an iron-containing alloy. The first cover layer or coating may also comprise or consist of carbon.
For a gas-tight connection or a gas-tight sealed housing, it is also possible for the mixed material of the first cover layer or coating to consolidate the bond between the first substrate and the second substrate.
For a gas-tight connection device or a gas-tight sealed housing, in particular before connecting at least two substrates gas-tightly to each other by direct bonding, a second cover layer or coating is arranged on the second substrate, in particular in order to directly and immediately bond the first metal substrate to the second substrate, at least in the region of the laser bonding wire or of the plurality of bonding points on the side facing the first substrate.
As described above, the first cover layer or coating or the second cover layer or coating on the second substrate may comprise or consist of a composition by which compressive stress may be generated in the second substrate in a region of the second substrate that is close to the surface and extends perpendicularly relative to the surface of the second substrate (at least up to a depth DoL).
The material of the second substrate and the material of the second cover layer or coating may be mixed or introduced in the mixing zone and/or at least in the area of the second substrate close to the surface.
The second substrate of the gas-tight connection means or the gas-tight sealed housing may also comprise or consist of a material in which a compressive stress at least close to the surface can be introduced into the compressive stress region Ds, and the first cover layer or coating comprises or consists of a material which can introduce compressive stress into the material of the second substrate, in particular by ion exchange.
In this respect, the material of the second substrate may comprise or consist of glass, in particular soda lime silicate glass or borosilicate glass. The material of the second cover layer or coating may also comprise a compound suitable for discarding exchangeable ions, in particular a sodium and/or lithium compound, in particular sodium nitrate and/or lithium nitrate.
The mixed material or introduced material of the second cover layer or coating enables consolidation of the bond between the first substrate and the second substrate.
Also within the scope of the present invention is a method for producing a hermetic seal assembly of at least two parts, the method comprising the steps of: at least one first metal substrate is arranged planarly on a second substrate, wherein at least two substrates are arranged adjacent to each other or on each other, thereby forming a contact area between the at least two substrates, wherein the first substrate is in contact with the second substrate, and wherein the second substrate comprises a transparent material. The method further comprises the steps of: by directly joining at least two substrates to each other in the region of at least one contact region, whereby the at least two substrates are connected to each other in a gastight manner, a mixing zone is formed, a part of which extends into the first substrate and another part of which extends into the second substrate, and the at least two substrates are directly fusion-joined to each other.
In the process according to the method, a first cover layer or coating is arranged on the first substrate before the at least one first metal substrate is arranged planarly on the second substrate.
It may also be advantageous to arrange a second cover layer or coating on the second substrate before arranging the at least one first metal substrate planarly on the second substrate.
The name of the first cover layer or coating and the second cover layer or coating is not limited to two cover layers or coatings in this respect. It is within the scope of the present disclosure that various embodiments may also include only a first or second cover layer or coating therein.
The contact area is understood to be the plane of the mutually inclined surfaces of the two substrates to be contacted. A touch contact surface refers to a sub-area of a contact area where the distance between two substrates is too small to be measured visually anymore. Finally, in the context of the present invention, a good area is defined in which the distance between the substrates is sufficiently small, or the two substrates are in actual contact, as described below. Typically, in this aspect, the contact area is greater than or equal to the good area, which in turn is greater than or equal to the touch contact area. The first substrate and the second substrate may each have at least one contact region. The contact area is also understood to be the plane of contact between the two existing between the first substrate and the second substrate.
In other words, first, two substrates are arranged one on the other, i.e. for example, stacked one on the other, wherein the second substrate is pressed, typically by gravity, against the upper part of the first substrate. In this case the direction above or below is only described, since the substrate can of course be in any direction in space, even adjacent arrangements not being out of the protective scope. The two substrates are typically arranged against each other on the side where they extend more.
If the two substrates have an absolute planar form, that is to say no depressions, projections or bends at all, which can only be achieved theoretically, the first substrate and the second substrate will touch each other over their entire surface area. Thus, the two substrates will be in contact with each other at all points of the mutually facing surfaces. In general, in a realistic configuration, this is not possible. In contrast, the substrate is still dome-shaped, slanted, curved, or concave or convex, even to a small extent, so that full contact is only achieved in very specific cases. In this regard, a touch contact area (e.g., defined as a "good area", as described below) where the substrates are in contact with each other or where the distance between the substrates is smaller than a certain degree is formed.
If one substrate is arranged directly next to another substrate or on top of each other, it is meant that at least two substrates are arranged one on top of the other or applied to each other such that they rest on each other over their entire surface area, in particular no other material or layer is present or interposed between the at least two substrates. For technical reasons, very small air pockets between the substrates or impurities such as dust particles may not be avoided. This may also be due to the fact that irregularities may exist even on the micro-areas between the substrates or the surface of the substrate layers. For example, if the bonding region or laser bonding line created by the laser preferably provides a height HL of between 4-25 μm, a hermetic seal may be ensured by the laser bonding line, since the distance that may occur between the two substrates may be bridged.
One of the laser bonding lines or the laser bonding line may enclose the entire functional area with a distance DF. The distance DF around the entire functional area may be constant, and thus the laser bonding lines are arranged around the functional area at about the same distance on all sides. The distance DF may also vary depending on the use case, for example, if multiple housings are joined in a common working step, or if the functional area has a circular or arbitrary shape and the laser bonding lines are drawn in a straight line, it may be more advantageous in terms of production. Even if the cavity has optical properties, for example being shaped in the form of a lens such as a peripheral pyramid, the laser bonding line may be formed around the cavity and possibly at different distances from the cavity. The housing may also include a plurality of cavities.
The method may further comprise the steps of: an airtight assembly having at least two substrates is inspected by determining a distance distribution between the at least two substrates. The method may further comprise the steps of: a first bonding quality index Q1 for checking mechanical strength or air tightness of the component is determined.
The first binding mass index Q1 is determined by q1=1- (a-G)/a. In this case, a represents the area of the contact region, and G represents the good region. The good area G corresponds in particular to the touch contact area; the good area G represents a portion of the contact area in which the distance between the substrates is less than 5 μm, preferably less than 1 μm, more preferably less than 0.5 μm, most preferably less than 0.2 μm. The bonding quality index Q1 may be greater than or equal to 0.8, preferably greater than or equal to 0.9, and more preferably greater than or equal to 0.95.
The contact region has a useful region N for calculating a first bond quality index Q 1 。Q 1 From Q 1 =1- (N-G)/N.
In the context of the method, a reflection of radiation generated by irradiating a substrate stack having at least one contact area of the substrate stack with radiation input may be detected. In other words, the radiation or illumination of the substrate stack causes a reflection of the radiation on the surface of the substrate due to the radiation input. Such radiation reflection may be a reflection of the radiation input, which has some degree of reflection on one of the surfaces. In the case of two substrates, where the first substrate is metallic, three surfaces on which such reflection has occurred may be relevant for this purpose. These surfaces are the top side of the first metal substrate, the inner side of the second metal substrate, in particular the transparent substrate, and the outer side of the second substrate.
In other words, the first substrate has an outer or external flat side aligned with the surrounding environment and having a substantially planar or flat form. The rounded narrow side bordering the outer flat side is generally oriented at right angles to the outer flat side and is configured to extend, for example, around the edge of the outer flat side. In one example, the first substrate may be described as a plate or block having two large area sides (i.e., an outer side and an inner side) and four smaller sides disposed between the large area sides, in particular, perpendicular to and bordering the two large area sides. In that case, the four smaller sides together form a circular narrow side, the top side forming the outer flat side of the first substrate. Typically, the surface area of the top side is larger than the sum of all smaller sides of the rounded narrow sides. These statements about dimensions and proportions can also apply to the second substrate by analogy.
In the area where the two substrates touch and contact, the inner sides of the two substrates are not reflected or are not significantly reflected, and thus this portion is relatively small. However, if the two substrates are separated, there is a distance between the two substrates, and the two substrates are not in contact in this portion of the area, then in either case a portion of the radiation input on all three surfaces of the two substrates is reflected. In case there are more substrates, for example three substrates, more surfaces can be considered accordingly.
According to incidence from the substrate stackReflection of radiation into a measuring or viewing device, determining a first bond quality index Q of the contact surface of the substrate stack 1 。
For example, before the first substrate and the second substrate are bonded to each other, the first bonding quality index Q is determined 1 。
The method may further comprise the steps of: determining a second bond quality index Q of the contact surface of the hermetic joint assembly 2 Wherein in particular Q 2 Greater than Q 1 . More particularly, Q 2 /Q 1 Greater than 1.001.
Preferably, the radiation reflection produces a pattern, in particular an interference pattern, and more particularly, the pattern is produced by superposition of back-scattering in at least one contact area of the radiation input with the housing. In that case, a measuring or viewing device may be provided, which recognizes or detects the interference pattern and from which the distance between the two substrates can be calculated or deduced.
The pattern from the reflection of the radiation may have an arrangement in which the pattern extends around one or more defects. In other words, the pattern may be particularly arranged around those places where the at least two substrates do not touch contact. In this case, it is particularly simple to use a measuring or viewing device to locate the position where at least two substrates do not touch contact. The defects here may be characterized by a distance between the substrates of more than 5 μm, preferably more than 2 μm, more preferably more than 1 μm, more than 0.5 μm, or preferably more than 0.2 μm at these defects. In other words, the defect is located at a point that is specific to a good region G criterion not being met. In this case, the contact area between at least two substrates may be completely divided into a good area G and a defective area F.
In one example, the corresponding region allocations may be identified from an interference pattern in the form of newton rings. If the radiation input is set in the visible range, for example λ=500 nm, the height difference per newton ring is λ/2=250 nm. For example, if the presence or absence of three newton rings is set as a boundary criterion to determine whether there are good regions, then in the optical image analysis of the reflection of radiation from the housing, the region defined as a good region may be a region where the distance between the substrates is less than or equal to 3 x λ/2=750 nm.
The method may further comprise the steps of: a plasma discharge is initiated by the laser in the mixing zone in preparation for the laser joining operation.
The scope of the present invention also includes a housing produced by the above method.
The connecting device according to the invention or the sealing housing according to the invention can be used in such a way that it is used in contact or touching contact with biological materials, in particular with plant, human or animal cells. For example, the shell may be grown with biological material. Because the airtight connection device may be conveniently configured to not contain toxic and/or allergenic substances, these substances are not released either. Thus, preferably, the airtight connection means or housing is arranged and configured so as not to exert a damaging effect on the biological material. Advantageously, according to the invention, the connection device has a reduced potential for allergic reactions when in contact with human or animal or plant material, for example when incorporated therein and/or applied thereto.
According to the invention, an exemplary application of the connection device is a medical implant, in particular a medical in-vivo sensor and/or a wearable device, applied or arranged in an operational state in a human or animal body or other plant material. Typical wearable devices are fitness trackers and smart watches, i.e. in particular electronic devices that can measure or monitor physical states or physiological (physical) parameters. Of course, further applications are possible and are also included in the present invention, such as such wearable devices, or other applications, that may affect physiological (physical) parameters.
The invention will be described in more detail below based on exemplary embodiments and with reference to the drawings, wherein identical and similar elements are provided with the same reference numerals and features of various exemplary embodiments may be combined with each other.
Drawings
The method comprises the following steps:
fig. 1 shows a first embodiment of the gas-tight device.
Fig. 2 shows a plan view of an air-tight device, here in the form of a housing with functional areas.
Fig. 3 shows a transverse section through an airtight device with a functional area as a cavity.
Figure 4 shows a cross-sectional view of a detailed description of the landing zone in one embodiment.
Fig. 4a shows a cross-sectional view of a detailed description of a landing zone in another embodiment.
Fig. 5 shows a cross-sectional view of a detailed description of another junction region.
Figure 6 shows a transverse cross-section of an air-tight device with a junction area.
Fig. 7 shows a lateral cross-sectional view of a substrate stack with shims.
Fig. 8 shows a transverse cross-section of an air-tight device with gaskets.
Figure 9 shows a digital photograph of the joined air-tight device.
Fig. 10 shows a transverse cross-section of an air-tight device with multiple laser spots.
Fig. 11 shows a transverse cross-section of an air-tight device with multiple laser spots and gaskets.
Fig. 12 shows a laser device for generating a laser bond.
Fig. 13 to 17 show microscopic images of the respective bonded substrate stacks.
Fig. 18 shows a photographic reproduction for evaluating a sample that can achieve airtightness.
Fig. 19 shows a schematic diagram of a quality factor measurement.
Fig. 20 shows a flow chart for quality factor measurement.
Fig. 21 shows a flow chart of the various steps involved in determining a quality factor.
Detailed Description
Referring to fig. 1, a first embodiment of an air tight assembly 1 according to the present invention is shown, wherein a first metal substrate 3 is arranged below a dielectric 4. The dielectric 4 or the second substrate 4 is placed on the metal substrate 3 such that the dielectric 4 is located by its inner side 11 on the inner side 12 of the first substrate 3. The two substrates 3, 4 are thus in contact with each other. Depending on the particular surface finish (see e.g. fig. 6), the contact areas may constitute the entire respective inner side 11, 12 and/or the substrates 3, 4 may be in planar contact with each other. The substrates 3, 4 may also be in touch contact only partially or in certain areas. When the substrates 3, 4 are stacked one on top of the other, gravity causes a minimum amount of touching contact between the two substrates 3 and 4 unless they are separated by, for example, a spacer 35 (see, for example, fig. 7).
In the example of fig. 1, three laser bonding wires 6a, 6b, 6c or bonding points 6a, 6b, 6c are introduced in order to bond the two substrates 3, 4 to each other. The joints/ lines 6a, 6b, 6c are arranged along the sides of the substrates 3, 4, wherein the joints are inserted from above (with respect to the drawing) by means of a laser (see fig. 12). Here, the focal plane is provided in the region of the inner surfaces 11, 12. Preferably, the focal plane is set to be already in the metal substrate 3, for example offset by 10 to 20 μm into the metal substrate 3, that is to say 10 to 20 μm below the inner surface 12 of the metal substrate 3. The effect may be that the laser beams 6a, 6b, 6c in the contact plane 15 reach a desired width, preferably 4 μm + -1 μm, more preferably 4 μm + -2 μm, more preferably 4 μm + -3 μm. The width can also be achieved by a corresponding beam shaping upstream of the lens.
As in the case of fig. 1, when the two substrates 3, 4 are stacked on top of each other and their inner sides 11, 12 are directly adjacent, that is to say in particular in planar touch contact, the contact plane 15 is also equivalent to the two inner sides 11, 12, as shown in fig. 1.
Fig. 1 has shown three laser bonding wires 6a, 6b, 6c, one offset overlapping the other, so that the laser bonding wires 6a, 6b, 6c also interact. In this regard, various effects may be produced or realized depending on the purpose. For example, the laser bonding wires cannot be stacked in a state of being respectively warm, but the laser bonding wire 6b of the next one is inserted only when the preceding laser bonding wire 6a has cooled. The cooling process of the laser bonding wire at this time proceeds very fast because only a very small amount of thermal energy is input, and mainly because the metal material of the metal substrate 3 has excellent thermal conductivity. By means of the first laser bonding wire 6a, the materials of the two substrates 3, 4 are mixed with one another and the possible irregularities and the spacing (air gap 26) are melt bridged. Depending on the quality of the surface, for example, in the case of a large air gap 26 of up to 5 μm occurring in the region of the contact region 15 to be bonded, the bonding with the first laser bonding wire 6a may be just insufficient at this time. However, since the area to be bonded of the contact area 15 is closed by introducing the first laser bonding wire 6a, if an air gap 26 is pre-existing, the air gap 26 is closed and at least the materials are already "mixed", an optimal further mixing of the two materials of the substrates 3, 4 can be achieved by introducing the second laser bonding wire 6b and, if appropriate, the third laser bonding wire 6 c.
Fig. 2 shows a plan view of the gas-tight component 1, wherein laser bonding wires 6a, 6b, 6c are guided around the functional area 2. In the figure, for simplicity, conventional three laser bonding wires 6a, 6b, 6c are shown, but fewer or more laser bonding wires 6, 6a, 6b, 6c may be inserted. The laser bonding wires 6a, 6b, 6c are led around the functional area 2 so as to hermetically seal the functional area 2. In this case, the molten zone around the laser bonding wire has a width w. For example, an object 5 to be accommodated such as an electronic circuit may be arranged in the functional area 2 (see fig. 3).
Fig. 3 shows a gas-tight housing 9 with a gas-tight assembly 1, wherein the cavity 2 is gas-tight sealed. By introducing three laser bonding wires 6a, 6b, 6c around the cavity 2, the second substrate 4 is hermetically bonded to the first substrate 3 in a completely closed manner and an inseparable bond is established. Like reference numerals refer to like parts compared to fig. 1.
Fig. 4 shows a detailed description of the laser bond wire 6 or the laser bond point of the bond point 6, by means of which a wide variety of improvements of the invention can be explained. In the context of known bonding methods that the applicant has already flowed domestically, the present invention relates to the subsequent further development and optimization of various bonding processes between the substrates 3, 4. The present invention focuses on bonding or joining two different substrates 3, 4, in particular in the case of a metal substrate 3 and a dielectric 4, in particular for glass, glass ceramic, sapphire, etc. In this respect, very different CTE values, in particular different brittleness etc. of the different materials have to be considered. For example, when bonding materials, unwanted cracks, even holes or voids, may occur in the dielectric 4. In part, due to thermal expansion in the laser bond wire 6 that occurs due to the ultra-rapid input of heat by the laser to the dielectric 4. They cause considerable damage such that the second substrate 4 is easily broken from the first substrate 3, that is to say the material of the second substrate is broken "in the vicinity of the bonding wire". However, such cracks may impair the optical properties in addition to the mechanical properties, jeopardizing the established gas tightness. These cracks 67 and voids 68 should therefore be avoided particularly effectively.
The laser junction 6 shown in the transverse cross-section of fig. 4 has a mixing region 62, which mixing region 62 extends into the metal substrate 3 and the dielectric 4 and in the process also bridges the air gap 26 drawn. For example, in the region of the laser joint 6, the size of the air gap 26 should be less than or equal to 5 μm to ensure adequate production of the laser joint 6. For this purpose, it is important, for example, that the plasma in the laser junction 6 is first initiated by inserting a laser, which plasma may not bridge the larger gap. In turn, plasma excitation is a prerequisite for the ability to apply a considerable amount of punctiform heat to the laser joints 6 by means of a laser. The example of fig. 4 shows a re-solidified region 64 in the dielectric 4 (second substrate) that extends a long distance into the second substrate 4. This therefore represents a disadvantageous situation which has led to a number of cracks 67 and voids 68. The boundary 66 of the resolidified area, which is the boundary of the material modification in the second substrate 4, should then also be inspected in the finished product using, for example, a microscope.
The resolidification zone below the mixing zone 62, that is to say in the first substrate 3, is not shown in the example of fig. 4, since the effect in the dielectric 4 is explained first (for this purpose, however, see fig. 5). In the mixing zone 62, when the material of the first substrate 3 and the material of the second substrate 4 are simultaneously converted to a molten state, the two materials are mixed. In a simple case, the two materials of the substrates 3, 4 have sufficient affinity, with the result that, as a result of the mixing in the mixing zone 64, a sufficient adhesion and a sufficient holding force of the second substrate 4 on the first substrate 3 (and vice versa) has been established.
The first substrate 3 may comprise, for example, copper, silver, gold, iron, aluminum, titanium or other alloys such as steel, which list is not exhaustive.
In the region of the (rear) laser joining region 6, an air gap 26 of less than or equal to 0.5 μm may be present. When the distance in the contact area 15 is less than or equal to 0.5 μm, the contact area 15 is also marked as, for example, a good area G.
In the case of only one laser bonding wire 6, 6a, 6b, 6c or bonding point, the width W of the laser bonding wire corresponds approximately to the beam width 2W in the contact region (15) produced by the laser generator Laser light (see FIG. 12). For N parallel laser bonding wires 6, 6a, 6b, 6c, the width W of the resulting laser bonding wire is typically less than or equal to the beam width 2W in the contact area (15) Laser light Because of, for example, overlapping of the laser active regions. H m Describing the height of mixing zone 62, H r The height of resolidification zone 64 is described. Ideally, H m Greater than or equal to H r The method comprises the steps of carrying out a first treatment on the surface of the However, to explicitly show this relationship, it is apparent that this is not the case in the example of fig. 4.
Fig. 4a shows a cross-sectional view of a detailed description of a bonding zone in a further embodiment, in which, in particular before at least two substrates 3, 4 are air-tightly connected to one another by direct bonding, a first cover layer or coating 70 is arranged on the first metal substrate 3 at least in the region of the laser bonding wires 6, 6a, 6b, 6c, 6d or of a plurality of bonding points on the side facing the second substrate 4, in particular in order to bond the first metal substrate directly and immediately to the second substrate.
The cover layer or coating 70 may be applied by various methods including, for example, physical and/or chemical deposition methods, such as Physical Vapor Deposition (PVD), chemical vapor deposition methods, or ALD methods (atomic layer deposition), and in particular, the cover layer or coating may also be applied as a localized structure by printing techniques such as screen printing or 3D printing. Another form of application may be performed while the substrate is floating on the liquid metal.
By the joining method described in the present case, the material of the first substrate 3 and the material of the first cover layer or coating can be mixed in the mixing zone 62 and/or at least in the area of the first substrate 3 close to the surface.
In this respect, advantageously and in particular, the morphology of the microstructure in the mixing region can be modified by the material of the first cover layer or coating.
In some embodiments, an alloy of materials including at least the first metal substrate 3 and the first cover layer or coating may be formed in at least some of the mixing zone.
It is particularly advantageous that the alloy can form eutectic when a corresponding amount of coating or covering is available for the joining operation. By selecting the thickness D of the first coating layer or layer 1 This amount may be achieved. For example, the thickness D 1 And may be between 0.1 and 5 μm.
Preferably, the first metal substrate 3 may comprise or consist of iron, steel or an iron-containing alloy, and the first cover layer or coating may comprise or consist of carbon. By this choice of materials, a localized higher carbon containing region may be provided in or on the mixing zone 62.
Without being limited by generality and by the examples described above, consolidation of the bond between the first substrate and the second substrate may be achieved by a hybrid material of the first cover layer or coating.
In this respect, within the scope of the present disclosure, consolidation refers to an increase in the force required to separate the joined substrates 3, 4 after the joining operation. These forces can be introduced perpendicular to the respective surface of the substrates 3, 4 with which they are in contact, so that the strength against pulling-off can be determined and specified, or transversely with respect to this surface, and in the other case the strength with respect to proportional shear forces can be determined and specified.
With respect to the first and second cover layers or coatings disclosed herein, consolidation is understood to be an increase in the aforementioned forces in the case of a bonded connection using the first and/or second cover layers or coatings, as compared to a bonded connection without the first and/or second cover layers or coatings.
Alternatively or additionally, in particular before the at least two substrates 3, 4 are air-tightly connected to each other by direct bonding, a second cover layer or coating 71 is arranged on the second substrate 4 at least in the area of the laser bonding wires 6, 6a, 6b, 6c, 6d or of the plurality of bonding points on the side facing the first substrate 3, in particular in order to bond the first metal substrate 3 directly and immediately to the second substrate 4.
The cover layer or coating 71 on the second substrate 4 may comprise or consist of a composition by means of which compressive stresses may be generated in the region of compressive stress Ds within the second substrate 4, close to the surface of the second substrate 4 and extending perpendicularly relative to the surface of the second substrate, at least up to a depth DoL.
In a preferred embodiment, the material of the second substrate 3 is mixed with or introduced into the mixing zone 62 and/or at least in the region of the second substrate 4 close to the surface, whereby a corresponding localized compressive stress zone can be formed. In this respect, the second substrate 4 comprises or consists of a material in which at least the compressive stress near the surface can be introduced into the compressive stress region Ds, and the first cover layer or coating comprises or consists of a material which is capable of introducing compressive stress into the material of the second substrate 4, in particular by means of ion exchange. Some patent documents describe such glasses and/or glass articles and materials for introducing compressive stress into the compressive stress region Ds, for example in patent documents US2018/0057401A1, US2018/0029932A1, US2017/0166478A1, US9908811B2, US 2016/012240 A1, US 2016/012329 A1, US2017/0295657A1, US8312739B2, US9359251B2, US9718727B2, US2012/0052271A1, US2015/0030840A1 or DE102010009584B4 and CN102690059a.
For example, the material of the second substrate may typically comprise or consist of glass, in particular soda lime silicate glass or borosilicate glass, and the material of the second cover layer or coating 71 may comprise a compound suitable for releasing exchangeable ions, in particular a sodium and/or lithium compound, in particular sodium and/or lithium nitrate.
Here, the thickness of the second cover layer or coating layer 71 may also be made preferably 0.1 to 5 μm, and here the bonding between the first substrate and the second substrate may also be consolidated by a mixed or introduced material of the second cover layer or coating layer 71.
Fig. 5 shows a detailed illustration of a laser bonding wire 6 of another embodiment, and again, the same reference numerals used in the other figures are used to designate the same features as well. In this embodiment, the laser bonding wire 6 additionally has a resolidification zone 69 extending below the mixing zone 62 in the first substrate 3. It should be assumed that the mixing zone 62 merges directly into the corresponding resolidification zone 64, 69. Here, the mixing region 62 is different in that there is a mixture of materials, that is, the mixing region 62 includes the material of the first substrate 3 and the material of the second substrate 4. However, it is also possible to introduce the material of the substrates 3, 4 into the respective other substrate, for example in the form of a slice 4a or dendrite 4b, and to observe and adjust it as well. The metallic material of the first substrate 3 may also be guided into the second substrate 4, for example in the form of droplets 3 a. Such droplets 3a may be "guided" into the second substrate 4 at a plurality of micrometers.
The dendrite 4b shown in fig. 5 may be of particular interest, as such an embodiment enables a significant improvement of the adhesion of the two substrates 3, 4 to each other. In this regard, dendrite 4b may act as an anchor or nail when it engages with the material of another substrate in an interlocking manner or inserted at an angle to the vertical. In this respect, for example, the two materials of the different substrates 3, 4 have little affinity with each other and do not adhere to each other even in a molten state. In that case, such dendrites 4b or interlocking engagement in the mixing zone 62 may be the best choice for providing adhesion or retention between the two substrates 3, 4.
Referring to fig. 6, there is shown a laser bonding wire 6 on one side of the assembly 1. In this example, the air gap 26 in the contact region 15 of the laser bonding wire 6 is just small enough to introduce the laser bonding wire 6, but in other regions of the inner sides 11, 12, the air gap is large due to the surface irregularities 31, 32. In this respect, both the recess 31 and the projection 32 are disadvantageous for introducing the laser bonding wire 6. In principle, it has been found to be advantageous when the surfaces 11, 12 are smooth, for example with an average roughness of 0.1 μm or less. This was initially surprising, because particularly smooth surfaces reflect well, and it was therefore difficult to introduce energy deposition into the assembly by laser.
Fig. 7 shows an embodiment of a substrate stack 1 that has not yet been joined, wherein a spacer 35 is inserted between the substrates 3, 4 in order to set a defined distance between the substrates 3, 4. Within the scope of the invention it has been shown that the air gap 26 is tolerable as long as the distance between the regions of the substrates 3, 4 in the contact region 15 to be joined is sufficiently small, for example less than 5 μm, preferably less than 2 μm, preferably less than 0.5 μm. The example of fig. 7 also shows that even coarser irregularities of the substrates 3, 4 can be easily compensated for using the spacer 35, since it is no longer necessary to establish the distance between the substrates by planar contact between the inner sides 11, 12. Furthermore, the air gap 26 can assume another task, since it provides a flow area 40 into which the material of the substrates 3, 4, in this case of particular importance the material of the substrate 4, can enter when the material is melted. In this way, if appropriate, cracks and gaps in the second substrate 4 can be reduced or even completely avoided.
Fig. 8 shows the exemplary embodiment of fig. 7, in which the laser spot 6 is introduced on the left side in the area of the contact area 15. Here, the material of the second substrate 4 has flowed into the flow region 40. In the mixing zone 62, the material of the first substrate 3 is mixed with the material of the spacer 35 and the material of the second substrate 4. The mixing zone 62 extends both into the first substrate 3 and into the second substrate 4. In view of the appropriate choice of materials for the spacer 35, even in the case of selecting materials having a certain affinity with the material of the first substrate 3 and the material of the second substrate 4, for example, the adhesion characteristics can be further improved.
The flow area 40 may also be provided as a recess in one of the substrates 3, 4 (not shown). Advantageously, the flow region 40 extends along the intended laser junction so that material can flow continuously into the flow region 40 to absorb pressure peaks or even not allow them to form in the first place, thereby reducing the creation of cracks and voids 67, 68.
Fig. 9 shows a photographic illustration of the gas-tight assembly 1 corresponding to fig. 6. Irregularities such as scratches 31 or burrs 32, which may impair the air tightness of the assembly 1, have been eliminated.
Referring to fig. 10, another aspect of the present invention is explained in more detail. A sequence of a plurality of laser spots for the continuous generation of a laser joining line 6 is shown, with spots 1, 2, 3, 4, 5 being inserted in succession. In this case, since the width w of the beam focus is larger than the distance d between the target points or laser spots, the spots generated by the spots here are warm and partially overlap. This allows for further improvements in the mixing zone 62 and the resulting bonding.
A similar effect is achieved in all other respects if the laser spot shown in fig. 10 is not considered to belong to a certain laser bonding wire 6, but to 5 different laser bonding wires 6, 6a, 6b, 6c, 6d, which are inserted into the material adjacent to each other. In both cases, the tightness and/or the retention of the substrates 3, 4 to each other is enhanced.
Next, fig. 11 shows another embodiment, in which a plurality of laser spots 6 are inserted into the contact area 15, with the two substrates 3, 4 being arranged spaced apart from one another by means of a spacer 35. When, for example, one or more shims 35 are made sufficiently small, i.e., for example, thinner than 5 μm (e.g., in the form of a film, metal foil, or vapor deposition, sputtering thereon, or in the form of a photolithographic glass layer), the remaining air gap 26 may be bridged directly by the laser. The air gap is no longer an obstacle here for subsequent laser spots that partially overlap with the corresponding preceding laser spot, since the air gap has already been partially bridged or closed. When the distance is set larger, the spacer 35 may serve as a "start point" for the laser bonding process and may be melted (as shown in fig. 6). The additional laser spot partially overlaps the first "start point" and thus can also be generated at a larger distance between the substrates. This also allows distances between the substrates of more than 5 μm to bridge, for example more than 10 μm, even up to 20 μm or even more. The height of the laser spot can here be set to 50 μm, even up to, for example, 100 μm. For example, the distance d from one laser spot to the next may be set to d < 10 μm, preferably d < 6 μm, more preferably d < 4 μm.
In the example of fig. 11, the mixing zone 62 extends only slightly into the second substrate 4, since the interaction zone 62 is held to a greater extent outside the second substrate 4 by the spacer 35. For example, the penetration value of the mixing zone 62 may be set to only 1 μm±0.8 μm. In this case, in particular, the resolidified areas 64 in the second substrate 4 may disappear completely or mostly, and the mixing areas 62 may still extend deep enough into the second substrate 4 to ensure bonding.
The left side of fig. 12 depicts a laser generator 80 for generating a laser spot 6 in the gas tight assembly 1. In this possible embodiment, the processing head 801 contains a mirror 802 and inscription lens 803 tilted 45 °. Here, the processing head moves in an x-direction 804 parallel to the laser beam of the laser source 806. In contrast, the apparatus 1 or the substrate stack is moved perpendicular to the y direction 805 of the separation stage. Further, on the right side of fig. 12, the intensity distribution 82 of the heat output is plotted for the case where three laser bonding wires 6a, 6b, 6c are introduced into the airtight assembly 1 while being respectively still warm. The lateral laser bonding wires 6a, 6c may create a further intensive mixing in the intermediate bonding wire 6 b.
Fig. 13 shows a photomicrograph of the resulting hermetic assembly 1, with the first substrate 3 made of aluminum and the second substrate 4 made of sapphire. The presence of the mixing zone 62 has been successfully achieved in practice only in the second substrate 4 and the occurrence of cracks or holes in the second substrate can be largely prevented. Dendrites 4b can be clearly seen, wherein the sapphire 4 has penetrated or mixed in the metal of the first substrate 3 and in the resolidification zone 69. This can significantly increase the holding force holding the sapphire 4 to the aluminum 3. The particles 4a of sapphire may also be identified in the resolidified area 69 of the first substrate 3.
Fig. 14 shows another photomicrograph, with the assembly shown in fig. 13 shown enlarged and again shown as a false color chart. The generation of dendrites 4b is very surprising and can be said to be pioneering. For this reason, this pleasant new development project of the applicant will be presented as completely as possible by various illustrations. Overall, however, the quality of the resulting connection and the significant reduction in the resolidified area 64 in the second substrate 4 are also powerful indicators, indicating that the present invention can pave the way for a wider range of products.
Fig. 15 shows another micrograph, with steel chosen as the first substrate 3 and sapphire as the second substrate 4. In this example, a clear resolidified zone 64 above the mixing zone 62 in sapphire 4 can be seen, along with a clear crack 67. In this example, the sapphire does not penetrate the steel. For this purpose, by means of the beam arrangement, a rough, interlocking surface with the laser spot 6 can be produced on the first substrate 3, providing an interlocking structure 37, which also enhances the adhesion of the gas-tight assembly 1.
Fig. 16 shows another micrograph, with titanium being chosen as the first substrate 3 and sapphire as the second substrate 4. In this example, too, there may have been an effect that there is no clearly noticeable resolidified area 64 in the second substrate 4, and thus little stress or crack 67 is introduced in the second substrate 4. In the mixing zone 62, the material of the first substrate 3 has surprisingly been guided into the second substrate 4 and there formed a comb-like structure which likewise has the extraordinary, interlocking engagement effect of the gas-tight component 1.
Fig. 17 finally shows another micrograph, with copper as the first substrate 3 and sapphire as the second substrate 4. In this example, the resolidified areas 64 in the second substrate 4 may also be virtually eliminated. In this example, it is possible to see the droplets 3a that have penetrated a few microns into the second substrate 4, as well as the dendrites 4b and the melted portions 4a of the second substrate that have penetrated the first substrate 3. In this example, the adhesion can also be significantly improved.
Within the scope of the present invention, a series of measurements were also made to determine the hermeticity. In this respect, for 61 samples 1a, the leak rate (mbar x liters/sec) of the respective sample 1a was determined. Fig. 18 shows, by way of example, a copper sample 1a for determining the leakage rate, in which a sapphire disk 4 is laser bonded to a metal part 3.
The leak rate is determined by spray techniques. For example, helium is suitable for spraying gas onto the sample and measuring the conditions that may diffuse into the interior of sample 1, either at standard pressure or in a low pressure environment (vacuum). A pressure difference of 1 bar between the outside and the inside of sample 1a has proven to be advantageous. Various metal samples 1a, in particular, an airtight assembly 1 made by disposing a sapphire disk 4 on a metal member 3 and bonding them with a laser was measured. Sample aluminum, sample titanium, sample steel, and sample copper were measured as the metal member 3, wherein each sample was bonded to the sapphire substrate 4 by laser. The lower limit of measurement of the apparatus for checking airtightness is 1×10 -9 Leak rate of mbar x liters per second. It can be assumed that applications by spray testing and up to 1X 10 -7 Millibar×ls -1 Or less, preferably 1X 10 -8 Millibar×ls -1 Or smaller, more preferably 1X 10 -9 ×ls - A leak rate of 2 or less, achieving a complete seal. The following table shows by way of example 12 samples 1a, wherein the metal part 3 for producing the hermetic assembly 1 consists of (substantially) aluminium in the case of three samples denoted "Al", tin in the case of samples denoted "Ti", iron in the case of samples denoted "St", and copper in the case of samples denoted "Cu".
Therefore, all samples 1a reproduced herein are designated as airtight within the meaning previously defined. In particular, it should be emphasized here that the samples with aluminum and steel have such a small sizeSo that at a given 1 x 10 leakage rate -9 ×ls -1 With the lower measurement range limits of (2), it is no longer possible to resolve them further by the device used. Therefore, the actually realized air tightness is better than the lower limit of the measuring range and is smaller than 1×10 -9 ×ls -1 。
Optionally, the quality of the created airtight assembly 1 should be inspectable. For this purpose, it is in any case appropriate to establish a distance distribution in the region of the laser joining connection before introducing the laser joining connection. For ease of understanding, fig. 19 shows a detailed illustration of the substrate stack 9, wherein the failure region 17, the touch contact region 18 and the good region 19 can be seen. The double arrow 21 indicates the position of the maximum height of the defective area 17.
The radiation input 22 is directed towards the substrate stack 9, wherein in the defect region 17, the radiation input is reflected both at the inner side 11 of the first substrate 3 and at the inner side 12 of the second substrate 4. The radiation reflection 24, 24a can be detected by a detector 30. In this case, the difference in the paths taken by the radiation reflection 24 and the radiation reflection 24a creates an interference pattern, which is created by the two radiation reflections relative to each other. For the transparent substrate (4) fresnel effects are involved, i.e. for example reflection. For glass without an anti-reflection coating, for example, the reflection may be up to about 4% per interface in each case. For the metal substrate (3), the reflection is due to the polished surface. In this case, the radiation input 22 comprises monochromatic light. Thus, interference patterns, in particular newton rings, can be read, from which the magnitude of the distance between the substrates can be obtained.
Fig. 20 shows steps of a method for producing or inspecting a hermetic assembly of a substrate stack. In a first step 100, a first substrate is planarly arranged on a second substrate. In a second step 110, the height distribution of the gaps within the substrate stack 9 is determined from the detection of radiation reflections generated by irradiating the substrate stack 9 with a radiation input 22 on at least one contact area of the substrate stack 9. In step 120, a combined quality index Q is determined from the height distribution 1 . In decision step 130, if the combined quality index Q determined in step 120 1 Greater than a prescribed permissible threshold value Q 1 threshold value It is determined that the substrate stack can in this case be released for further processing, i.e. in particular for laser bonding by means of laser bonding wires 6. However, if Q 1 Less than the achieved or desired Q 1 threshold value In step 135, the substrate stack 9 is reworked, i.e. disassembled, if appropriate cleaned again, or fed for some other type of reuse, for example.
Next, in step 140, the substrate stack 1 is laser bonded to form one or more shells. Subsequently, a second height distribution of the gaps within the substrate stack of the attached substrate stack 1 is determined in step 150, and Q is calculated therefrom in step 160 2 . In step 170, Q is determined 2 Whether or not it is greater than Q 2 Prescribed threshold value Q 2 threshold value . For example, Q 2 threshold value Less than or equal to Q 1 threshold value . Preferably, in step 170, Q is likewise determined or checked 2 Whether or not in any way equal to or greater than Q 1 . If both conditions are met, the bonded enclosure or enclosures 1 may be further processed in step 180, e.g., the plurality of enclosures 1 may be separated from the wafer stack 9 at separation line 8. Conversely, if one or both of the two conditions specified in step 170 are not, or are not, met, then in step 175, an alternative further treatment of the substrate stack 9 may be introduced; in this case, for example, the failure region F17 may be marked, or the wafer stack 9 may be supplied for recycling.
FIG. 21 depicts some steps that may be performed to calculate the combined quality index Q 1 And/or Q 2 . In step 121, image data from the detector 30 is first obtained by means of, for example, an operating computer tailored for this purpose. In step 122, the image data obtained in step 121 is converted into a grayscale pattern, or a red channel is extracted from the image data. The processing can be carried out by means of an image processing function, as in the same way by step 121 run on the same computer that obtained the image data. The physical boundaries of the substrate stacks 3, 4, 9 are determined, via step 123, in the recorded image from the detector 30, for example in the form of angular recognition. At step 124, the viewing angle may be corrected or equalized, if necessary. In step 125, the contrast may be improved, for example, in the region of the substrate stack. In this case, for example, it is possible to simply subtract the darkest gray background value and generate a gray-scale image from a black-and-white image. Finally, in step 126, the height distribution is calculated from the image data obtained by the detector 30, e.g. based on established newton rings. Thereafter, in step 127, the areas in which the critical height or profile has been established, which in particular relates to the areas that have been established as the failure area F17, can be marked and integrated. Finally, in step 128, a corresponding Q factor Q is calculated from the corrected or modified image data as described above 1 Or Q 2 。
Thus, by the present specification, a method of joining two different substrates, in particular a metal substrate, with a dielectric such as a glass substrate or a crystal by a laser joining method can be fully and understandably disclosed. The corresponding air tight joint assembly may also be described in detail and explained so as to be reproducible. This specification includes a description of a wide variety of findings that may contradict or be surprising with "conventional" knowledge. For this reason, the results were also recorded using photomicrographs to illustrate that it has been possible to convert the invention into actual results.
It is obvious to the person skilled in the art that the above-described embodiments are to be understood as illustrative, and that the invention is not limited thereto, but may be varied in many ways without departing from the scope of the claims. It is also apparent that the essential components of the present invention are defined separately, whether or not these features are disclosed in the specification, claims, drawings or other parts, even if they are described together with other features. In all the figures, the same reference numerals denote the same technical features, so that the description of features which may be mentioned in only one figure or at least not in relation to all the figures may also be transferred to those figures in the description which do not describe the features.
List of reference numerals
1. A component or substrate stack;
1a sample;
2. functional areas or cavities;
2a, 2b in the defect region 17;
3. a first substrate (comprising a metal);
3a droplets;
4. a second substrate (dielectric, e.g., glass);
4a molten portions or droplets of a second substrate;
4b dendrites of the second substrate;
5. an object to be accommodated;
6. 6a, 6b, 6c bonding areas or laser bonding lines;
8. a separation line;
9. a housing;
11. a contact region or inner side of the first substrate;
12. a contact region or inner side of the second substrate;
15. a contact region;
17. a failure region or defect region F;
18. touching the contact area B;
19. good region G;
20. a radiation source;
21. a maximum distance between the two substrates;
22. radiation input;
24. 24a radiation reflection;
26. a possible air gap;
30. a detector;
31. a recess;
32. a protrusion;
35. a gasket;
37. an interlocking structure;
40. a flow region;
62. a melting zone or mixing zone;
64. a resolidification zone;
66. boundaries of the resolidified region;
67. cracking and fissure;
68. a void;
69. a resolidification zone;
70. a first cover layer or coating;
71. a second cover layer or coating;
80. a laser generator;
82. an intensity distribution;
100. an arrangement step;
110. A step of determining a height distribution;
120. first combined quality index Q 1 A calculation step of (a);
121. providing data;
122. a conversion step;
123. a detection step;
124. correcting;
125. contrast is improved;
126. a step of calculating the height distribution;
127. a marking step;
128 Q factor Q 1 And/or Q 2 A calculation step of (a);
130 Q 1 is performed in the evaluation step;
135. a feedback step;
140. a further processing step, in particular laser bonding;
150. determining a second height distribution;
160 Q 2 a calculation step of (a);
170 Q 2 is performed in the evaluation step;
175. a marking step when a fault occurs;
180. final treatment, in particular segmentation (singulation) of the device 1 or the housing 9;
801. a processing head of a laser generator;
802. a deflection mirror;
803. a laser lens;
804. the direction of motion of the processing head;
805. the direction of motion of the substrate;
806. a laser beam of a laser beam source;
d the distance between two laser bonding wires or two bonding points;
n protected areas;
the width of the W laser bonding wire 6;
D 1 the thickness of the first cover layer or coating 70;
D 2 the thickness of the second cover layer or coating 71;
a Ds compressive stress region;
depth of DoL compressive stress region.
Claims (40)
1. An airtight connection device (1), comprising:
a first metal substrate (3);
A second substrate (4) which is transparent at least in certain regions and/or at least partially for at least one wavelength range,
wherein the first substrate is arranged adjacent to a contact area (12) of the second substrate by a contact area (11); and
at least one laser bonding wire (6, 6a, 6b, 6c, 6 d) or a plurality of bonding points for bonding the first metal substrate directly and immediately to the second substrate on or in the contact area (11, 12, 15);
wherein a portion of the laser bond wire or bond sites extends into the first substrate and another portion extends into the second substrate and the at least two substrates are directly fusion bonded to one another.
2. The gas-tight connection (1) according to the preceding claim,
wherein a mixing zone (62) is present in the laser bonding wire (6, 6a, 6b, 6c, 6 d) or in the plurality of bonding points, the material of the second substrate (4) and the material of the first substrate (3) being fused in the mixing zone (62).
3. The gas-tight connection (1) according to the preceding claim,
wherein in the mixing zone (62) the metallic material of the first metallic substrate (3) has entered the second substrate (4); and/or the number of the groups of groups,
Wherein in the mixing zone (62) material of the second substrate (4) has entered the first substrate (3).
4. The gas-tight connection device (1) according to any of the preceding claims,
wherein the mixing zone (62) has a thickness measured in a direction perpendicular to the contact areas (11, 12, 15); and is also provided with
Wherein the thickness of the mixing zone is preferably at least 1 μm, preferably 2 μm or more, more preferably 5 μm or more; and/or
Wherein the mixing region (62) extends into the second substrate by 1 μm or more.
5. The gas-tight connection (1) according to one of the two preceding claims,
wherein the mixing zone (62) has a width; and is also provided with
The width of the mixing zone is greater than the thickness of the mixing zone in the second substrate (4); and/or
The width of the mixing zone (62) is 50% or more greater than the thickness of the mixing zone, more preferably 100% or more greater than the thickness of the mixing zone;
wherein the width of the mixing zone (62) is measured in particular at a contact region (15) between the first substrate (3) and the second substrate (4) in a direction parallel to the contact region and perpendicular to the laser bonding lines (6, 6a, 6b, 6c, 6 d).
6. The gas-tight connection device (1) according to any of the preceding claims,
the at least one laser bonding wire (6, 6a, 6b, 6c, 6 d) or the plurality of bonding points further has a resolidified region (64, 69), wherein the resolidified region has a thickness measured in a direction perpendicular to the contact region (11, 12, 15); and is also provided with
Wherein the thickness of the resolidified region is preferably less than or equal to 20 μm, preferably less than or equal to 10 μm, more preferably less than or equal to 5 μm; and/or
Wherein the depth to which the resolidified areas (64, 69) extend into the second substrate is less than or equal to 20 μm, preferably less than or equal to 10 μm, more preferably less than or equal to 5 μm.
7. The gas-tight connection (1) according to the preceding claim,
wherein the resolidified areas (64, 69) extend along the laser bond lines (6, 6a, 6b, 6c, 6 d); and/or
Wherein at the contact region (11, 12, 15) between the first substrate (3) and the second substrate (4) and in a direction parallel to the contact region, the resolidification zone (64, 69) has a width of 10 μm±5 μm, preferably 20 μm±10 μm, more preferably 30 μm±10 μm; and/or
Wherein the width of the resolidification area (64, 69) is greater than the thickness of the resolidification area at the contact area (11, 12, 15) between the first substrate (3) and the second substrate (4) in a direction parallel to the contact area and perpendicular to the laser bonding line.
8. The gas-tight connection device (1) according to any of the preceding claims,
wherein in the mixing zone (62) the material of the first substrate (3) and the material of the second substrate (4) are arranged such that a form-fitting interlocking engagement is formed between the material of the first substrate and the material of the second substrate; and/or
The first metal base plate (3) and the second base plate (4) of the airtight connection device (1) are provided with an interlocking structure (37) which is fused together.
9. The gas-tight connection device (1) according to any of the preceding claims,
wherein in the mixing zone (62) and/or the resolidification zone (64, 69) the metallic material of the metallic substrate (3) is present in the form of droplets (3 a) and/or dendrites and/or the material of the second substrate (4) is present in the form of melted portions (4 a) and/or dendrites (4 b), wherein the arrangement of droplets and/or dendrites is such that the bond between the first and second substrate is consolidated.
10. The gas-tight connection device (1) according to any of the preceding claims,
wherein the metallic material of the metallic substrate (3) and/or the material of the second substrate (4) has penetrated into at least one of the resolidification areas (64, 69), in particular in the form of droplets (3 a), melted portions (4 a) and/or dendrites (4 b), and such that the bond between the first and second substrates is consolidated.
11. The gas-tight connection device (1) according to any of the preceding claims,
wherein the contact region (11) of the first substrate (3) has at least one touch contact region in which the first substrate touches the second substrate (4) in a planar manner;
wherein the average distance between the touch contact area and the first and second substrates is in particular less than or equal to 1 μm, preferably less than or equal to 0.5 μm, more preferably less than or equal to 0.2 μm; and/or
Wherein the touch contact area corresponds in particular to the contact area (15).
12. The gas-tight connection device (1) according to any of the preceding claims,
wherein the laser bonding wires (6, 6a, 6b, 6c, 6 d) connect the first substrate (3) to the second substrate (4) such that the two substrates can be separated from each other only by applying a holding force or by breaking the second substrate if the holding force is greater than the force required to break the second substrate; and/or
Wherein the retention force of the second substrate on the first substrate is greater than 10N/mm 2 Preferably greater than 25N/mm 2 More preferably greater than 50N/mm 2 Even more preferably less than 75N/mm 2 Even more preferably still greater than 100N/mm 2 。
13. The gas-tight connection device (1) according to any of the preceding claims,
wherein the first substrate (3) is characterized in that the contact region (11) has a flat form, in particular a planar form; and/or
Wherein the contact area (11) of the first substrate (3) is polished; and/or
Wherein the contact region (11) of the first substrate (3) has an average roughness Ra of less than or equal to 0.5 μm, preferably less than or equal to 0.2 μm, more preferably less than or equal to 0.1 μm, even more preferably less than or equal to 50nm, and finally preferably less than or equal to 20nm, and/or
Wherein the second substrate (4) is characterized in that it has a flat form, in particular a planar form, more particularly an average roughness Ra of less than or equal to 0.5 μm at the contact area (12).
14. The gas-tight connection (1) according to the preceding claim,
wherein the bonding laser has a beam focus, and wherein a focal plane for introducing the laser bonding wires (6, 6a, 6b, 6c, 6 d) is distally offset, in particular in the first substrate (3);
and wherein the focal plane is shifted distally preferably 10 μm±10 μm, more preferably 20 μm±10 μm into the first substrate (3).
15. The gas-tight connection device (1) according to any of the preceding claims,
wherein the beam width (2W) in the contact plane (11, 12, 15) Laser light ) 4 μm.+ -. 1. Mu.m, preferably 4 μm.+ -. 2. Mu.m, more preferably 4 μm.+ -. 3. Mu.m.
16. The gas-tight connection device (1) according to any of the preceding claims,
wherein the first substrate (3) is composed of a metallic material; and/or
Wherein the first substrate (3) comprises a metal within the definition of the periodic table of elements.
17. The gas-tight connection device (1) according to any of the preceding claims,
wherein the first substrate (3) comprises or consists of at least one of molybdenum, tungsten, silicon, platinum, silver or gold, and/or
Wherein the first substrate (3) comprises an alloy, in particular comprises or consists of at least one of carbon, copper, manganese, chromium, magnesium, cobalt, nickel, tin, zinc, niobium, palladium, rhenium, indium, tantalum, titanium or iridium.
18. The gas-tight connection device (1) according to any of the preceding claims,
wherein the second substrate (4) is a transparent substrate; and/or
Wherein the second substrate (4) comprises or consists of glass, glass ceramic, silicon, sapphire or a combination of the foregoing materials;
And/or wherein the second substrate (4) comprises or consists of a ceramic material, in particular an oxide ceramic material.
19. The gas-tight connection (1) according to the preceding claim,
wherein the second substrate (4) comprises or consists of at least one of quartz glass, borosilicate glass, aluminosilicate glass, glass ceramics such as Zerodur, ceran or Robax, optical ceramics such as alumina, spinel, pyrochlore or aluminum oxynitrite, calcium fluoride crystals or chalcogenide glass.
20. The airtight connection device (1) in particular according to any one of the preceding claims, comprising:
a first metal substrate (3);
a second substrate (4) which is transparent at least in certain regions and/or at least partially for at least one wavelength range,
wherein the first substrate is arranged adjacent to a contact area (12) of the second substrate by a contact area (11); and
at least one spacer (35) for establishing a distance between the first substrate and the second substrate.
21. The airtight connection device (1) according to the preceding claim, further comprising:
at least one laser bonding wire (6, 6a, 6b, 6c, 6 d) or a plurality of bonding points for directly and immediately bonding the first metal substrate (3) to the second substrate;
Wherein a portion of the laser bond wire or bond sites extends into the first substrate and another portion extends into the second substrate and the at least two substrates are directly fusion bonded to one another.
22. The gas-tight connection (1) according to any one of the two preceding claims,
wherein the first substrate (3) is in contact with the second substrate (4) through a spacer (35); and/or
Wherein the spacer (35) is arranged between the first substrate (3) and the second substrate (4).
23. The gas-tight connection device (1) according to any one of the three preceding claims,
wherein the shim (35) extends at least along the laser joining line (6, 6a, 6b, 6c, 6 d) or in the region of the joining point, or
Wherein the pad (35) extends beyond the laser bonding wire (6, 6a, 6b, 6c, 6 d) or beyond the region of the bonding point, or
Wherein the pad (35) is formed over the entire surface area, and/or
Wherein the spacer (35) has a thickness of at least 5 μm, more preferably a thickness of at least 10 μm, more preferably a thickness of at least 20 μm.
24. The gas-tight connection device (1) according to any one of the three preceding claims,
Wherein the gasket (35) consists of a metallic material, and/or
Wherein the spacer (35) is in the form of a coating on the first substrate (3) or the second substrate (4), and/or
Wherein the spacer (35) is integrally formed with the first substrate (3) and/or the second substrate (4).
25. The airtight connection device (1) in particular according to any one of the preceding claims, comprising:
a first metal substrate (3);
a second substrate (4) which is transparent at least in certain regions and/or at least partially for at least one wavelength range,
wherein the first substrate is arranged adjacent to a contact area (12) of the second substrate by a contact area (11); and
at least one flow region (40) for receiving molten material from a laser bonding wire (6, 6a, 6b, 6c, 6 d) or bonding point, wherein the laser bonding wire or bonding points are used to directly and immediately fusion bond the first metal substrate to the second substrate.
26. The gas-tight connection (1) according to the preceding claim,
wherein the at least one flow region (40) is arranged adjacent to the laser bonding wire (6, 6a, 6b, 6c, 6 d) or the plurality of bonding points, and/or
Wherein the at least one flow region (40) is arranged between the first substrate (3) and the second substrate (4), and/or
Wherein the at least one flow region (40) is formed on the contact region (11, 12, 15) when the second substrate (4) is arranged on the first substrate (3).
27. The airtight connection device (1) in particular according to any one of the preceding claims, comprising:
a first metal substrate (3);
a second substrate (4) which is transparent at least in certain regions and/or at least partially for at least one wavelength range,
wherein the first substrate is arranged adjacent to a contact area (12) of the second substrate by a contact area (11);
-a first laser bonding wire (6, 6a, 6b, 6c, 6 d) or a first set of bonding points for directly and immediately bonding the first metal substrate to the second substrate on or in the contact area (11, 12, 15), wherein a part of the first laser bonding wire or the first set of bonding points extends into the first substrate and another part extends into the second substrate and the at least two substrates are directly fusion bonded to each other; and
A second laser bonding wire (6 a, 6b, 6c, 6 d) or a second set of bonding points for bonding the first metal substrate directly and immediately to the second substrate on or within the contact area, wherein the second laser bonding wire or the second set of bonding points extend into the first laser bonding wire or the first set of bonding points, respectively, and a modification or improvement of material mixing is achieved by the first laser bonding wire or the first set of bonding points.
28. Hermetically sealed housing (9), in particular with a hermetically sealed connection device (1) according to any one of the preceding claims, the hermetically sealed housing (9) comprising:
a first metal substrate (3);
a second substrate (4) which is transparent at least in certain regions and/or at least partially for at least one wavelength range,
wherein the first substrate is arranged adjacent to a contact area (12) of the second substrate by a contact area (11);
at least one functional region (2), in particular a cavity, which is arranged between the first substrate and the second substrate;
at least one laser bonding wire (6, 6a, 6b, 6c, 6 d) or a plurality of bonding points for bonding the first substrate directly and immediately to the second substrate on or in the contact area, in particular around the functional area, in order to hermetically seal the functional area; and
Wherein a portion of the laser bonding wire or the plurality of bonding points extends into the first substrate and another portion extends into the second substrate and the at least two substrates are directly fusion bonded to each other.
29. Hermetically sealed enclosure (9) according to the preceding claim,
wherein the laser bonding wires (6, 6a, 6b, 6c, 6 d) of the housing are formed around the functional area (2) in order to seal the functional area, and/or
Wherein the distance between the first substrate (3) and the second substrate (4) in the laser bonding wires (6, 6a, 6b, 6c, 6 d) is constantly less than 0.75 μm, preferably less than 0.5 μm, more preferably less than 0.2 μm.
30. Hermetically sealed enclosure (1) according to any one of the preceding claims, wherein the functional area (2) comprises a hermetically sealed accommodation cavity for receiving an object (5) to be accommodated, such as an electronic circuit, a sensor or a MEMS.
31. In particular a gas-tight connection device (1) or a gas-tight sealed housing (1) according to any of the preceding claims 1 to 30, in which case a first cover layer or coating is arranged on the first metal substrate (3), in particular before the at least two substrates are gas-tightly sealed connected to each other by direct bonding of the at least two substrates, at least in the region of the laser bonding wires (6, 6a, 6b, 6c, 6 d) or in the region of the plurality of bonding points on the side facing the second substrate, in particular in order to directly and immediately bond the first metal substrate to the second substrate.
32. A method of producing a gas-tight seal assembly (1) from at least two components, the method comprising the steps of:
-arranging at least one first metal substrate (3) planarly on a second substrate (4), wherein the at least two substrates are arranged adjacent to each other or on each other, thereby forming a contact area (11, 12, 15) between the at least two substrates, wherein the first substrate is in contact with the second substrate, and wherein the second substrate comprises a transparent material; and
by directly joining the at least two substrates to each other in the region of the at least one contact region, thereby connecting the at least two substrates to each other in a hermetically sealed manner, a mixing region (62) is formed, a part of which extends into the first substrate, another part extends into the second substrate, and the at least two substrates are directly fusion-joined to each other.
33. Method according to the preceding claim, during which method a first cover layer or coating is arranged on the first substrate (3) before the at least one first metal substrate (3) is arranged planarly on the second substrate (4).
34. The method according to any of the preceding claims 32 or 33, further comprising the step of:
inspecting the airtight assembly of the at least two substrates (3, 4) by determining the distance distribution between the at least two substrates, and/or
Determining a first binding quality index Q 1 To check the mechanical strength and/or the tightness of the assembly (1).
35. The method according to the preceding claim,
wherein the firstCombined quality index Q 1 From Q 1 =1- (a-G)/a, wherein,
a represents the area of the contact areas (11, 12, 15), G represents a good area;
wherein the good area G corresponds in particular to the touch contact area, and/or
Wherein the good region G describes a portion of the contact region (11, 12, 15) in which the distance between the substrates (3, 4) is less than 5 μm, preferably less than 1 μm, more preferably less than 0.5 μm, even more preferably less than 0.2 μm, and/or
Wherein the binding quality index Q 1 Greater than or equal to 0.8, preferably greater than or equal to 0.9, more preferably greater than or equal to 0.95.
36. The method according to any one of the preceding claims 32 to 35,
wherein the contact region (11, 12, 15) has a useful region N and is used for calculating a first bonding quality index Q of the useful region N 1 A kind of electronic device
Q 1 From Q 1 =1- (N-G)/N.
37. The method according to the preceding claim,
wherein the first bonding quality index Q is determined before bonding the first substrate (3) and the second substrate (4) to each other 1 A kind of electronic device
The method comprises the following steps: determining a second bonding quality index Q of the contact areas (11, 12, 15) of the hermetically sealed components (1) 2 Wherein, in particular, Q 2 Greater than Q 1 More particularly, Q 2 /Q 1 > 1.001 holds.
38. The method according to any of the preceding claims 32 to 37, comprising the steps of:
a plasma discharge is initiated in the mixing zone (62) by the laser to provide for a laser joining operation.
39. A housing (9) or an airtight connection device (1) produced by the method of any of the preceding claims 32 to 38.
40. Use of the airtight connection device (1) according to any one of the preceding claims 1 to 27 or the airtight sealed housing (9) according to any one of the preceding claims 28 to 31 in contact with human, animal or plant cells, in particular as a medical implant, in particular as a medical in vivo sensor, or as a wearable device.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102020129382 | 2020-11-08 | ||
| DE102020129382.8 | 2020-11-08 | ||
| DE102020129380.1A DE102020129380A1 (en) | 2020-11-08 | 2020-11-08 | Hermetically bonded assembly |
| DE102020129380.1 | 2020-11-08 | ||
| PCT/EP2021/080975 WO2022096724A2 (en) | 2020-11-08 | 2021-11-08 | Hermetically connected arrangement, enclosure and method for the production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116420224A true CN116420224A (en) | 2023-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180075351.7A Pending CN116420224A (en) | 2020-11-08 | 2021-11-08 | Air-tight connection device, housing and method for producing the same |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4241301A2 (en) |
| JP (1) | JP2023547667A (en) |
| CN (1) | CN116420224A (en) |
| AU (1) | AU2021373322A1 (en) |
| WO (1) | WO2022096724A2 (en) |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110038701A (en) | 2008-07-29 | 2011-04-14 | 코닝 인코포레이티드 | Dual stage ion exchange for chemical strengthening of glass |
| JP5690051B2 (en) * | 2009-05-27 | 2015-03-25 | 公益財団法人名古屋産業科学研究所 | Method of joining members using laser |
| DE102010009584B4 (en) | 2010-02-26 | 2015-01-08 | Schott Ag | Chemically toughened glass, process for its preparation and use thereof |
| JP5835945B2 (en) * | 2010-08-11 | 2015-12-24 | 株式会社日立製作所 | Laser bonding method |
| US20120052271A1 (en) | 2010-08-26 | 2012-03-01 | Sinue Gomez | Two-step method for strengthening glass |
| US9625713B2 (en) * | 2011-01-10 | 2017-04-18 | UNIVERSITé LAVAL | Laser reinforced direct bonding of optical components |
| CN102690059B (en) | 2011-03-23 | 2016-08-03 | 肖特玻璃科技(苏州)有限公司 | Aluminosilicate glass for chemical tempering and glass ceramics |
| US9359251B2 (en) | 2012-02-29 | 2016-06-07 | Corning Incorporated | Ion exchanged glasses via non-error function compressive stress profiles |
| US9315417B2 (en) * | 2013-02-17 | 2016-04-19 | Invenias Inc | Attachment of a cap to a substrate-based device with in situ monitoring of bond quality |
| WO2017156048A1 (en) * | 2016-03-10 | 2017-09-14 | Corning Incorporated | Sealed devices comprising transparent laser weld regions |
| FI125807B (en) * | 2014-04-17 | 2016-02-29 | Primoceler Oy | A method of welding two substrate bodies together using a focused laser beam |
| FI125935B (en) | 2014-09-26 | 2016-04-15 | Primoceler Oy | A method of manufacturing a transparent body for protection of an optical component |
| TWI749406B (en) | 2014-10-08 | 2021-12-11 | 美商康寧公司 | Glasses and glass ceramics including a metal oxide concentration gradient |
| US10150698B2 (en) | 2014-10-31 | 2018-12-11 | Corning Incorporated | Strengthened glass with ultra deep depth of compression |
| JP6839077B2 (en) | 2014-11-04 | 2021-03-03 | コーニング インコーポレイテッド | Deep non-fragile stress profile and how to create it |
| KR102393206B1 (en) | 2015-12-11 | 2022-05-03 | 코닝 인코포레이티드 | Fusion-Formable glass-based articles including a metal oxide concentration gradient |
| KR20240019381A (en) | 2016-04-08 | 2024-02-14 | 코닝 인코포레이티드 | Glass-based articles including a stress profile comprising two regions, and methods of making |
| EP3807624A1 (en) * | 2018-06-13 | 2021-04-21 | Carl Zeiss Industrial Metrology, LLC | Inspection of bonding quality of transparent materials using optical coherence tomography |
-
2021
- 2021-11-08 EP EP21810304.2A patent/EP4241301A2/en active Pending
- 2021-11-08 CN CN202180075351.7A patent/CN116420224A/en active Pending
- 2021-11-08 JP JP2023526983A patent/JP2023547667A/en active Pending
- 2021-11-08 WO PCT/EP2021/080975 patent/WO2022096724A2/en active Application Filing
- 2021-11-08 AU AU2021373322A patent/AU2021373322A1/en active Pending
Also Published As
| Publication number | Publication date |
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| WO2022096724A2 (en) | 2022-05-12 |
| WO2022096724A3 (en) | 2022-08-18 |
| AU2021373322A1 (en) | 2023-06-22 |
| JP2023547667A (en) | 2023-11-13 |
| EP4241301A2 (en) | 2023-09-13 |
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