CN116417321A - Temperature measurement structure, upper electrode assembly and plasma processing device - Google Patents

Temperature measurement structure, upper electrode assembly and plasma processing device Download PDF

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Publication number
CN116417321A
CN116417321A CN202111662207.1A CN202111662207A CN116417321A CN 116417321 A CN116417321 A CN 116417321A CN 202111662207 A CN202111662207 A CN 202111662207A CN 116417321 A CN116417321 A CN 116417321A
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China
Prior art keywords
upper electrode
electrode assembly
temperature
mounting base
measuring
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CN202111662207.1A
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Chinese (zh)
Inventor
周艳
李开元
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN202111662207.1A priority Critical patent/CN116417321A/en
Priority to TW111135857A priority patent/TWI828326B/en
Publication of CN116417321A publication Critical patent/CN116417321A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00—Energy generation of nuclear origin
    • Y02E30/10—Nuclear fusion reactors

Abstract

The invention provides a temperature measuring structure, an upper electrode assembly and a plasma processing device. The temperature measuring structure is applied to an upper electrode assembly of a plasma processing device, and comprises: the device comprises N flexible beams capable of transmitting optical signals, wherein each flexible beam comprises a feedback end and a measuring end; the feedback ends of the N flexible beams penetrate out of M positions on the upper surface of the upper electrode assembly and are connected with a processor, wherein M is more than or equal to 1 and less than N; the N measuring ends of the flexible beams are distributed at different positions in the upper electrode assembly, and the temperature of the upper electrode in the upper electrode assembly is obtained by transmitting the optical signals acquired by the measuring ends to the processor for processing. The temperature measuring structure provided by the invention can measure the temperature of a plurality of positions of the upper electrode without being limited by a cooling waterway, a heater pipeline and a gas channel in the existing structure of the upper electrode assembly, and is beneficial to obtaining the temperature distribution of the whole disc surface of the upper electrode.

Description

Temperature measurement structure, upper electrode assembly and plasma processing device
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a temperature measuring structure, an upper electrode assembly and a plasma processing device.
Background
In the fabrication of semiconductor devices, plasma etching is a critical process for processing wafers into design patterns. The plasma processing device generates plasma by means of radio frequency coupling discharge, and further performs etching process by utilizing the plasma. Among them, a capacitively coupled CCP plasma processing apparatus including upper and lower electrodes is one of the main plasma processors. The CCP apparatus as shown in fig. 1 includes a reaction chamber 100, an upper electrode assembly, and a lower electrode assembly 300, the lower electrode assembly 300 being positioned inside the reaction chamber 100, and the upper electrode assembly being positioned at the top of the reaction chamber 100. In the upper electrode assembly, the upper electrode, i.e., the gas shower head 210, simultaneously serves as an electrode to which the lower electrode below is electrically coupled, and also serves as a showerhead for the reaction gas, uniformly injecting the reaction gas into the reaction region below. The shower head 210 needs to be installed on an upper installation base 220, the temperature of the shower head is controlled through the installation base 220, specifically, a cooling water channel 221 and a heater 222 are arranged in the installation base 220 and used for controlling the temperature of the shower head 210, a gas channel 223 is further formed in the installation base 220, and reaction gas is input into the shower head 210 through the gas channel 223 and is uniformly sprayed to a reaction area by the shower head 210.
During etching performed by the CCP apparatus, the temperature uniformity of the showerhead 210 has a great influence on the etching rate and quality of the wafer, so it is necessary to monitor the temperature distribution of the showerhead 210. In the prior art, a contact type temperature measuring device such as a thermocouple or a thermal resistance sensor is adopted to measure the temperature of the shower head 210 in a point-to-point manner during operation. A thermocouple or thermal resistance sensor needs to be inserted through the mounting base 220 from the outside to the upper surface of the showerhead 210 to measure the temperature of the showerhead 210. Specifically, as shown in fig. 1, a plurality of vertical through holes are formed in the mounting base 220, a thermocouple or a thermal resistance sensor 400 sleeved with a stainless steel sleeve penetrates through the through holes, the top of the thermocouple or the thermal resistance sensor 400 is sealed by using a flange 500, and a temperature measuring end contacts with the upper surface of the spray header 210 opposite to the through holes, so that the temperature of the spray header 210 at a temperature measuring point is obtained.
However, since the cooling water channel 221, the heater 222 pipe and the gas passage 223 are distributed in the mounting base 220 and they overlap each other in the radial direction as shown in fig. 1, the through holes on the mounting base for mounting the thermocouple or the thermal resistance sensor 400 need to avoid the cooling water channel 221, the heater 222 pipe and the gas passage 223, which makes the number of holes that can be opened less and the positions limited, more temperature measuring points cannot be added at a later stage, and the temperature of the showerhead 210 obtained by the limited temperature measuring points cannot fully reflect the temperature distribution of the surface of the showerhead 210.
Disclosure of Invention
The invention aims to provide a temperature measuring structure, an upper electrode assembly and a plasma processing device, wherein the temperature measuring structure can measure the temperature of a plurality of positions of an upper electrode without being limited by a cooling waterway, a heater pipeline and a gas channel in the existing structure of the upper electrode assembly, and is beneficial to obtaining the temperature distribution of the whole disc surface of the upper electrode.
In order to achieve the above object, the present invention is realized by the following technical scheme:
a temperature measurement structure for an upper electrode assembly of a plasma processing apparatus, comprising:
the device comprises N flexible beams capable of transmitting optical signals, wherein each flexible beam comprises a feedback end and a measuring end;
the feedback ends of the N flexible beams penetrate out of M positions on the upper surface of the upper electrode assembly and are connected with a processor, wherein M is more than or equal to 1 and less than N;
the N measuring ends of the flexible beams are distributed at different positions in the upper electrode assembly, and the temperature of the upper electrode in the upper electrode assembly is obtained by transmitting the optical signals acquired by the measuring ends to the processor for processing.
Further, the upper electrode assembly comprises a mounting base and a spray header, through holes penetrating through the lower surface and the upper surface of the mounting base are formed in the upper portion of the mounting base, the M positions are the positions of the through holes, the feedback end penetrates through the through holes to the upper surface of the mounting base, and the measuring ends are distributed on the spray header.
Further, the number of the through holes is one.
Further, the through hole is arranged close to the center of the mounting base.
Further, the mounting base is provided with a gas channel, and the through hole avoids the position of the gas channel.
Further, a plurality of mounting grooves are formed in the lower surface of the mounting base or the upper surface of the spray header, each mounting groove is communicated with the through hole and one temperature measuring point of the spray header, and the measuring ends are distributed at the temperature measuring points.
Further, the mounting base is provided with a first air hole, the spray header is provided with a second air hole, and the mounting groove bypasses the first air hole and the second air hole.
Further, at least two of the mounting slots have partial sections that coincide.
Further, the upper surface of the spray header is provided with a central area and a plurality of concentric ring areas concentric with the central area, the temperature measuring points are distributed in the central area and different concentric ring areas, and the number of the temperature measuring points in the outer concentric ring areas is larger than that in the inner concentric ring areas.
Further, the flexible bundle is an optical fiber.
Further, the measuring end is filled with a fluorescent substance.
Further, the measuring end is in close contact with the spray header.
Furthermore, the measuring end is not filled with fluorescent substances, and fluorescent substances are smeared at the temperature measuring point on the spray header.
Further, the processor comprises a transmitter, can emit laser, transmits the laser to the measuring end through the flexible beam, excites the fluorescent substance to generate fluorescence, and processes the optical signal to obtain a temperature value.
Further, the area of the installation base opposite to each temperature measuring point is provided with a heat insulation layer.
Further, a flange is arranged at one end of the through hole, which is located on the upper surface of the mounting base, the flexible beam penetrates through the flange, and the flange is sealed with the through hole and the flexible beam.
An upper electrode assembly provided with a temperature measurement structure as claimed in any one of the preceding claims.
A plasma processing apparatus comprising a reaction chamber and an upper electrode assembly as described above, the upper electrode assembly being mounted at a top opening of the reaction chamber.
Compared with the prior art, the invention has the following advantages:
according to the temperature measuring structure provided by the invention, the rigid temperature measuring devices such as thermocouples or thermal resistance sensors are replaced by the multi-channel flexible beams, and each flexible beam can extend from the same position on the upper surface of the upper electrode assembly to different positions inside, so that each measuring end is distributed at different positions inside the upper electrode assembly, and the temperature at each position of the upper electrode is measured. The number of the flexible bundles is not limited by a cooling water path, a heater pipeline and a gas channel in the upper electrode assembly, the flexible bundles can be arbitrarily selected and divided according to the needs, and the temperature measuring point position of the upper electrode can be arbitrarily added according to the needs. Therefore, the temperature measuring structure can measure the temperature of any position of the upper electrode, and is beneficial to monitoring the temperature distribution of the whole disc surface of the upper electrode.
Drawings
For a clearer description of the technical solutions of the present invention, the drawings that are needed in the description will be briefly introduced below, it being obvious that the drawings in the following description are one embodiment of the present invention, and that, without inventive effort, other drawings can be obtained by those skilled in the art from these drawings:
FIG. 1 is a schematic diagram of a prior art upper electrode assembly temperature measurement;
FIG. 2 is a schematic view of a first embodiment of the present invention with a temperature measurement structure in the upper electrode assembly;
FIG. 3 is a schematic view of the flexible bundle of FIG. 2 positioned in a mounting slot;
FIG. 4 is a schematic view of the upper surface of the showerhead of FIG. 2 having mounting slots;
FIG. 5 is a schematic view of a flexible beam of a temperature measurement structure according to a second embodiment of the present invention placed in a mounting groove;
FIG. 6 is a schematic view of a third embodiment of the present invention, wherein a temperature measuring structure is provided in an upper electrode assembly;
fig. 7 is a schematic view of the flexible bundle of fig. 6 placed in a mounting slot.
Detailed Description
The following provides a further detailed description of the proposed solution of the invention with reference to the accompanying drawings and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
As described in the background art, the existing upper electrode temperature measuring device adopts thermocouple or thermal resistance sensors, and a plurality of through holes need to be formed in the mounting base, and each temperature measuring sensor passes through one through hole and then contacts with the upper electrode to measure the temperature, so that the temperature of one position of the upper electrode can be correspondingly measured only by forming one through hole. Because of the limitation of the cooling waterway, the heater pipeline and the gas channel in the mounting base, the opening positions and the number of the through holes are limited, and therefore the existing temperature measuring device cannot be used for measuring the temperature distribution of the whole disc surface of the upper electrode.
Based on this, the present invention provides a temperature measuring structure of an upper electrode assembly applied to a plasma processing apparatus, comprising: the device comprises N flexible beams capable of transmitting optical signals, wherein each flexible beam comprises a feedback end and a measuring end; the feedback ends of the N flexible beams penetrate out of M positions on the upper surface of the upper electrode assembly and are connected with a processor, wherein M is more than or equal to 1 and less than N; the N measuring ends of the flexible beams are distributed at different positions in the upper electrode assembly, and the temperature of the upper electrode in the upper electrode assembly is obtained by transmitting the optical signals acquired by the measuring ends to the processor for processing. According to the temperature measuring structure provided by the invention, the rigid temperature measuring devices such as thermocouples or thermal resistance sensors are replaced by the multi-channel flexible beams, and each flexible beam can extend from the same position on the upper surface of the upper electrode assembly to different positions inside, so that each measuring end is distributed at different positions inside the upper electrode assembly, and the temperature at each position of the upper electrode is measured. The number of the flexible bundles is not limited by a cooling water path, a heater pipeline and a gas channel in the upper electrode assembly, the flexible bundles can be arbitrarily selected and divided according to the needs, and the temperature measuring point position of the upper electrode can be arbitrarily added according to the needs. Therefore, the temperature measuring structure can measure the temperature of any position of the upper electrode, and is beneficial to monitoring the temperature distribution of the whole disc surface of the upper electrode.
Fig. 2 to 4 show a temperature measuring structure according to a first embodiment of the present invention. The upper electrode assembly includes a mounting base 220 and a shower head 210, a through hole penetrating through the lower surface and the upper surface of the mounting base 220 is formed above the mounting base 220, the feedback end 610 of the flexible beam 600 penetrates through the through hole to the upper surface of the mounting base 220, and the measurement ends 620 are distributed on the shower head 210, that is, the positions of the through hole opening on the upper surface of the mounting base are M positions. Illustratively, the number of through holes is one in fig. 2, where all flexible bundles 600 converge, and all feedback ends 610 pass through the through holes to reach the upper surface of the mounting base 220, because the flexible bundles 600 can be bent inside the through holes, all measurement ends 620 can radiate from the through holes to different measurement locations of the showerhead 210, unlike a thermocouple that cannot be deformed. Therefore, only one through hole is formed in the mounting base 220, so that temperature measurement can be performed at any of a plurality of different positions (i.e., temperature measurement points P) on the showerhead 210, so as to monitor the temperature distribution of the entire disk surface of the showerhead 210. Of course, the number of the through holes is not limited to one, and when the number of the temperature measuring points is large, a plurality of through holes can be arranged, and the specific number can be determined according to practical situations.
Optionally, the through hole is disposed near the center of the mounting base 220. On the one hand, as shown in fig. 2, the center of the mounting base 220 is already provided with a gas channel 223 for flowing the reaction gas, so that the through hole cannot be disposed at the center of the mounting base 220 in order to avoid the gas channel 223, and on the other hand, the through hole should be disposed as close to the center 220 of the mounting base as possible, so that the distance from the measuring end 620 of each flexible beam 600 to the corresponding temperature measuring point P is minimized. In addition, the mounting base 220 is also provided with other necessary structures such as a gas channel 223, a cooling water channel 221, a heater 222, etc. at other positions, and the positions of these structures need to be avoided when the through holes are formed.
As shown in fig. 3 and 4, the upper surface of the showerhead 210 is provided with a plurality of mounting grooves 211, each mounting groove 211 communicates the through hole with a temperature measuring point P of the showerhead 210, and the measuring ends 620 are distributed at the temperature measuring point P. That is, the mounting groove 211 starts from a position corresponding to the through hole of the mounting base 220 and ends at a position of the temperature measuring point P. Thus, each flexible bundle 600 is placed in one of the mounting slots 211, and the measuring end 620 of the flexible bundle 600 is placed at the corresponding temperature measuring point P, with the feedback end 610 passing out of the through hole to the upper surface of the mounting base 220. By providing the mounting slots 211, each flexible bundle 600 and measurement tip 620 are conveniently placed and secured without affecting the tight connection between the showerhead 210 and the mounting base 220.
As shown in fig. 4, the showerhead 210 is provided with a second air hole 212 for injecting the reaction gas, and the installation groove 211 needs to bypass the second air hole 212. Further, the number of the second air holes 212 provided on the showerhead 210 is generally large, so that the positions where the mounting grooves 211 can be formed are limited, and therefore, in order to fully utilize the non-air hole area on the upper surface of the showerhead 210, at least two of the mounting grooves 211 may have partial sections overlapping in the process of extending from the through hole to the P.
Further, as shown in fig. 4, the upper surface of the showerhead 210 has a central area Y0 and a plurality of concentric ring areas Y1 and Y2 concentric with the central area Y0, the temperature measuring points P are distributed in the central area Y0 and different concentric ring areas Y1 and Y2, and the number of temperature measuring points P in the outer concentric ring area Y2 is greater than the number of temperature measuring points P in the inner concentric ring area Y1. It will be appreciated that the area of the central region Y0 is small, fewer temperature measuring points P may be set, and the area of the concentric ring region further from the central region Y0 is larger, so that more temperature measuring points P need to be set, so that the temperature distribution of the entire disk surface of the showerhead 210 can be fully monitored.
In this embodiment, the flexible bundle 600 is an optical fiber, and of course, the flexible bundle 600 may be made of other flexible materials capable of transmitting optical signals. The measuring end 620 is a contact type temperature measuring structure, that is, the inside of the measuring end 620 is filled with fluorescent powder, and the fluorescent powder can generate fluorescence under the excitation action of laser for measuring temperature. Specifically, the processor includes a transmitter 700, the transmitter 700 may emit laser, and the laser is transmitted to the measurement end 620 through the flexible beam 600 to excite the fluorescent material to generate fluorescence, and the generated fluorescence is transmitted back to the transmitter 700 through the flexible beam 600, and the transmitter 700 processes the optical signal to obtain a temperature value. Since the fluorescent powder has different fluorescence life at different temperatures, the temperature value measured by the measuring end 620 can be obtained by detecting the fluorescence life. Because of the contact temperature measurement, the measurement tip 620 should be in close contact with the showerhead 210 in order to ensure measurement accuracy.
Further, a heat insulating layer may be disposed in the area of the mounting base 220 opposite to each temperature measuring point P, so as to isolate the mounting base 220 from the measuring end 620 located at the temperature measuring point P, so as to eliminate the influence of the temperature of the mounting base 220 on the temperature measuring result of the measuring end 620.
In addition, a flange 500 may be provided at one end of the through hole at the upper surface of the mounting base 220, the flexible bundle 600 passing through the flange 500, and sealing between the flange 500 and the through hole and the flexible bundle 600. Thus, flange 500 is used to seal the through hole from the flexible beam 600 for maintaining a sealed environment between the mounting base 220 and the showerhead 210.
Fig. 5 shows a measurement end in a temperature measurement structure according to a second embodiment of the present invention. The temperature measuring structure of this embodiment is different from that of the first embodiment in that the temperature measuring manner of the measuring end 620 is different. In the temperature measuring structure of this embodiment, the measuring end 620 is a non-contact type temperature measurement, that is, the measuring end 620 is not filled with fluorescent material, but the fluorescent material a is coated on the showerhead 210 at the temperature measuring point P. To ensure accuracy of non-contact temperature measurement, measurement end 620 needs to be opposite to phosphor A at P so that the laser of the transmitter can direct the phosphor and the excited fluorescence can enter the flexible beam through measurement end 620 to be fed to the transmitter.
The non-contact temperature measurement mode is adopted in this embodiment, so that the problem that the temperature measurement is inaccurate due to the poor contact between the measurement end 610 and the shower head 210 may be avoided in the contact temperature measurement mode shown in the first embodiment.
Fig. 6 and 7 show a temperature measuring structure according to a third embodiment of the present invention. The temperature measuring structure of this embodiment is different from that of the first embodiment in that the installation groove is opened at a different position. In this embodiment, as shown in fig. 7, a plurality of mounting grooves 224 are formed on the lower surface of the mounting base 220, and the mounting grooves 224 start from the through holes of the mounting base 220 and end at positions corresponding to the positions of the temperature measuring points P on the shower head 210. Thus, each flexible bundle 600 is placed in one of the mounting slots 224, and the measurement end 620 of the flexible bundle 600 is placed in the end position of the mounting slot 224 so as to be in contact with the corresponding temperature measurement point P on the showerhead 210, and the feedback end 610 extends out of the through hole to the upper surface of the mounting base 220. By providing mounting slots 224, each flexible bundle 600 and its measurement end 620 are conveniently placed and secured without affecting the tight connection between the showerhead 210 and the mounting base 220.
In this embodiment, the measurement end 620 is used for measuring temperature in a contact manner, so that the measurement end 620 needs to be in close contact with the showerhead 210 to improve the accuracy of temperature measurement. Specifically, as shown in fig. 7, the depth of the mounting groove 224 may be set to be small such that the measuring end 620 protrudes slightly from the lower surface of the mounting base 220 when the measuring end 620 is placed in the mounting groove 224, thereby ensuring that the measuring end 620 is in close contact with the upper surface of the showerhead 210 when the showerhead 210 is mounted to the mounting base 220. Of course, in other embodiments, the measuring end 620 may be used for non-contact temperature measurement, where fluorescent material needs to be applied at the temperature measuring point P of the showerhead 210, and the measuring end 620 is not required to be in close contact with the showerhead 210.
In this embodiment, the distribution of the mounting slots 224 on the lower surface of the mounting base 220 is similar to the distribution on the upper surface of the showerhead in the first embodiment. The lower surface of the mounting base 220 is provided with a first air hole for transferring the reaction gas to the showerhead 210, and the mounting groove 224 needs to bypass the first air hole. Further, the positions of the first air holes and the second air holes 212 are correspondingly arranged, so that the number of the first air holes arranged on the mounting base 220 is generally large, so that the positions where the mounting grooves 224 can be formed are limited, and therefore, in order to fully utilize the non-air hole area of the lower surface of the mounting base 220, at least two mounting grooves 224 can be partially overlapped.
For the temperature measurement structure of the first embodiment, the upper surface of the showerhead 210 is provided with the mounting groove 211 for mounting the flexible beam 600, so that the showerhead 210 and the flexible beam 600 can be mounted on different mounting bases 220, the temperature distribution of the surface of the showerhead 210 is monitored when the same etching process is operated, and the difference of heat transfer capability between the mounting bases 220 can be determined by comparing the temperature difference generated when the showerhead 210 is mounted on different mounting bases 220.
For the temperature measurement structure of the third embodiment, the mounting groove 224 is formed on the lower surface of the mounting base 220 for mounting the flexible beam 600, so that different showerheads 210 can be mounted on the mounting base 220 with the flexible beam 600, the temperature distribution of the surfaces of the showerheads 210 can be monitored when the same etching process is performed, and the difference between the showerheads 210 can be determined by comparing the temperature differences between the showerheads 210.
As can be seen from the above description, in the existing showerhead temperature measurement method, the rigid temperature measurement device of each channel needs to be provided with a corresponding mounting hole on the mounting base to mount the temperature measurement device, and the positions and the number of the temperature measurement points are limited by the structure of the mounting base. According to the three embodiments of the invention, the temperature distribution of the whole disk surface of the spray header is obtained through the multi-channel flexible temperature measuring device arranged on the spray header or the mounting base. The flexible temperature measuring devices of all channels are introduced to the upper surface of the spray header through one through hole on the mounting base, and the temperature measuring points and the number can be flexibly selected without being influenced by other part structures. The temperature distribution of the surface of the spray header can be obtained through reasonable temperature measurement point distribution. If a temperature measuring point is needed to be added in the later stage, a corresponding mounting groove is only needed to be added on the upper surface of the spray header or the lower surface of the mounting base, and the corresponding flexible beam is buried in the groove.
Based on the same inventive concept, the present invention also provides an upper electrode assembly and a plasma processing apparatus, wherein the upper electrode assembly is provided with the above temperature measuring structure, and the manner of arranging the temperature measuring structure in the upper electrode is as described above, and the description thereof is omitted. The plasma processing apparatus includes a reaction chamber and the upper electrode assembly mounted at a top opening of the reaction chamber. The plasma processing apparatus may be a CCP device as shown in fig. 1, or may be another type of semiconductor device.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.

Claims (18)

1. A temperature measuring structure applied to an upper electrode assembly of a plasma processing apparatus, comprising:
the device comprises N flexible beams capable of transmitting optical signals, wherein each flexible beam comprises a feedback end and a measuring end;
the feedback ends of the N flexible beams penetrate out of M positions on the upper surface of the upper electrode assembly and are connected with a processor, wherein M is more than or equal to 1 and less than N;
the N measuring ends of the flexible beams are distributed at different positions in the upper electrode assembly, and the temperature of the upper electrode in the upper electrode assembly is obtained by transmitting the optical signals acquired by the measuring ends to the processor for processing.
2. The structure of claim 1, wherein the upper electrode assembly comprises a mounting base and a shower head, a through hole penetrating through the lower surface and the upper surface of the mounting base is formed above the mounting base, the M positions are positions of the through hole, the feedback end penetrates through the through hole to the upper surface of the mounting base, and the measuring end is distributed on the shower head.
3. The thermometric construct of claim 2, wherein the number of through holes is one.
4. The thermometric construct of claim 2, wherein the through hole is disposed proximate a center of the mounting base.
5. The structure of claim 2, wherein the mounting base is provided with a gas channel, and the through hole is located away from the gas channel.
6. The structure of claim 2, wherein a plurality of mounting grooves are formed in a lower surface of the mounting base or an upper surface of the shower head, each of the mounting grooves communicates the through hole with a temperature measuring point of the shower head, and the measuring ends are distributed at the temperature measuring points.
7. The structure of claim 6, wherein the mounting base has a first air hole and the showerhead has a second air hole, and the mounting slot bypasses the first air hole and the second air hole.
8. The thermometric construct of claim 6, wherein at least two of said mounting slots have partial sections that coincide.
9. The structure of claim 6, wherein the upper surface of the showerhead has a central region and a plurality of concentric ring regions concentric with the central region, the temperature measurement points are distributed in the central region and different of the concentric ring regions, and the number of temperature measurement points in the outer concentric ring regions is greater than the number of temperature measurement points in the inner concentric ring regions.
10. The thermometric construct of claim 6, wherein the flexible bundle is an optical fiber.
11. The thermometric construct of claim 10, wherein the measurement tip is filled with a fluorescent substance.
12. The thermometric construct of claim 11, wherein the measurement tip is in intimate contact with the showerhead.
13. The structure of claim 10, wherein the measuring tip is not filled with fluorescent material, and wherein fluorescent material is applied to the showerhead at the temperature measurement point.
14. A thermometric construct according to claim 11 or 13, wherein the processor comprises a transducer adapted to emit laser light, transmit the laser light to the measurement end via the flexible beam, excite the fluorescent substance to fluoresce and process the optical signal to obtain a temperature value.
15. The structure of claim 6, wherein the mounting base is provided with a thermal insulating layer in an area opposite each temperature measuring point.
16. The thermometric construct of claim 2, wherein the end of the through hole at the upper surface of the mounting base is provided with a flange through which the flexible bundle passes, the flange being sealed from the through hole and the flexible bundle.
17. An upper electrode assembly provided with a temperature measuring structure as claimed in any one of claims 1 to 16.
18. A plasma processing apparatus comprising a reaction chamber and the upper electrode assembly of claim 17, wherein the upper electrode assembly is mounted at a top opening of the reaction chamber.
CN202111662207.1A 2021-12-31 2021-12-31 Temperature measurement structure, upper electrode assembly and plasma processing device Pending CN116417321A (en)

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US7196283B2 (en) * 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
JP6688172B2 (en) * 2016-06-24 2020-04-28 東京エレクトロン株式会社 Substrate processing system and method
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