CN116417020A - Magnetic storage structure and interference detection method based on same - Google Patents

Magnetic storage structure and interference detection method based on same Download PDF

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Publication number
CN116417020A
CN116417020A CN202111650578.8A CN202111650578A CN116417020A CN 116417020 A CN116417020 A CN 116417020A CN 202111650578 A CN202111650578 A CN 202111650578A CN 116417020 A CN116417020 A CN 116417020A
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data
storage area
check
monitoring
verification
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汤易
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Hikstor Technology Co Ltd
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Hikstor Technology Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G11B20/18—Error detection or correction; Testing, e.g. of drop-outs
    • G11B20/1833—Error detection or correction; Testing, e.g. of drop-outs by adding special lists or symbols to the coded information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G11B20/18—Error detection or correction; Testing, e.g. of drop-outs
    • G11B20/1833—Error detection or correction; Testing, e.g. of drop-outs by adding special lists or symbols to the coded information
    • G11B2020/1843—Error detection or correction; Testing, e.g. of drop-outs by adding special lists or symbols to the coded information using a cyclic redundancy check [CRC]

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  • Signal Processing (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The invention provides a magnetic storage structure and a detection interference method based on the same. The magnetic storage area comprises a main storage area and a monitoring storage area, wherein the monitoring storage area is used for writing initial monitoring data. The non-magnetic storage area includes a check storage area for writing check data. The checking circuit is used for acquiring the monitoring data currently stored in the monitoring storage area and checking the monitoring data by using the checking data so as to judge whether the initial monitoring data written in the monitoring storage area is rewritten or not. Based on the fact that the main storage area and the monitoring storage area which are also magnetic storage have the same interference characteristics, whether the data stored in the main storage area are rewritten is deduced through the data rewriting condition of the monitoring storage area, whether the stored data are rewritten under the interference of severe environments such as high temperature and high intensity magnetic fields of the magnetic storage structure is deduced, and accuracy of deducing interference can be improved. Simplifying the structure and reducing the cost.

Description

Magnetic storage structure and interference detection method based on same
Technical Field
The invention relates to the technical field of storage, in particular to a magnetic storage structure and a method for ascertaining interference based on the magnetic storage structure.
Background
In a magnetic random access memory, there is a possibility that data stored in the magnetic random access memory is rewritten under severe environments such as a high temperature and a high intensity magnetic field. In order to cope with such a situation, the following two technical ideas are mainly adopted. First, from the viewpoint of protection, anti-magnetic, high temperature resistant protective materials, structures, and the like are added to perform anti-magnetic inclusion, such as anti-magnetic packaging, plastic packaging with heat sinks, and the like. Secondly, from the perspective of prevention, structures or devices for detecting the external severe environment such as a high temperature or high intensity magnetic field are added, interference detection is performed, for example, by adding induction devices such as magnetic sensing and thermal sensing, the change of the surrounding environment condition of the magnetic random access memory is detected, and data information is provided for a subsequent response mechanism. However, in the second technical idea shown in the second embodiment, an additional sensor device is required to be added, and corresponding different sensing devices are required to be added to different interferences, which increases additional cost and complexity of production.
Disclosure of Invention
The invention provides a magnetic memory structure and a method for ascertaining interference based on the magnetic memory structure, which can realize monitoring whether data in a main memory area of the magnetic memory is rewritten due to external interference without adding additional sensing devices or additional preparation step processes, simplify the structure and reduce the cost.
In a first aspect, the present invention provides a magnetic storage structure comprising a magnetic storage region, a non-magnetic storage region, and a verification circuit. The magnetic storage area comprises a main storage area and a monitoring storage area, and the monitoring storage area is used for writing initial monitoring data. The non-magnetic storage area includes a check storage area for writing check data generated from the initial monitoring data. The checking circuit is used for acquiring the monitoring data currently stored in the monitoring storage area and checking the monitoring data by using the checking data so as to judge whether the initial monitoring data written in the monitoring storage area is rewritten or not.
In the above scheme, the monitoring storage area is divided into the magnetic storage area, and the initial monitoring data is written into the monitoring storage area; dividing a check storage area in the non-magnetic storage area to store check data generated according to the initial monitoring data; the checking circuit is used for checking the monitoring data currently stored in the monitoring storage area by using the checking data to judge whether the initial monitoring data written in the monitoring storage area is rewritten or not. Based on the fact that the main storage area and the monitoring storage area which are also magnetic storage have the same interference characteristics, when the temperature and the magnetic field strength of the external environment change, the situation that the data of the monitoring storage area is rewritten can fully represent the situation of the main storage area, whether the data stored in the main storage area is rewritten is deduced through the situation that the data of the monitoring storage area is rewritten, whether the stored data is rewritten under the interference of severe environments such as high temperature and high strength magnetic fields of the magnetic storage structure is ascertained, and the accuracy of ascertaining the interference can be improved. The above-mentioned shown ascertaining interference structure is implemented by utilizing the magnetic memory array and non-magnetic memory array existing in the magnetic random access memory itself, and can implement monitoring whether the data in the main memory area of the magnetic memory is rewritten due to external interference without adding additional sensor devices or additional preparation step processes, so that the structure is simplified and the cost is reduced. That is, the present invention makes the magnetic memory structure detect the data rewriting condition caused by the disturbance itself and feed back to the external system, and the external system makes countermeasures. In addition, the structure and the method for detecting the interference are higher in detection effect and higher in accuracy in application scenes in which interference factors such as high temperature, a strong magnetic field and the like are not normal, namely when the occurrence of the strong interference environment in the scenes is low probability (abnormal) or artificial intention.
In a specific embodiment, the non-magnetic storage area is further provided with a configuration storage area containing a check identification bit. The verification identification bit is used for writing a first identification and a second identification; the first flag indicates that the initial monitoring data written in the monitoring storage area is not rewritten, and the second flag indicates that the initial monitoring data written in the monitoring storage area is rewritten. The configuration storage area containing the check identification bits is partitioned in the non-magnetic storage area, so that the check result can be stored, and an external system can conveniently obtain the data interference condition of the main storage area by reading the check identification bits.
In a specific embodiment, the number of the monitoring storage areas is at least one; and at least one monitoring storage area is distributed in the main storage area, so that the data rewriting condition of the monitoring storage area can be reflected more accurately.
In a specific embodiment, the main storage area comprises at least one storage block, and at least one monitoring storage area is distributed in each storage block, so that the data rewriting condition of the monitoring storage area can be reflected more accurately by considering the uneven distribution phenomenon of the interference magnetic field.
In a specific embodiment, the non-magnetic storage area is a one-time programmable memory, which prevents the verification data from being rewritten due to interference.
In a specific embodiment, the magnetic storage structure further comprises: and the verification trigger circuit is connected with the verification circuit to trigger the verification circuit to verify, so that the verification circuit is conveniently triggered to detect.
In a specific embodiment, the magnetic storage structure further comprises: an input control circuit and an output control circuit. The input control circuit is connected with the check trigger circuit and is used for inputting a data stream containing check trigger bits; and the 0 and the 1 on the check trigger bit respectively indicate that the check circuit is triggered to perform check detection and the check circuit is not triggered to perform check. The output control circuit is connected with the verification circuit and is used for outputting a data stream containing verification completion bits and verification result data bits; the 0 and 1 on the check completion bit respectively indicate that the check circuit does not complete the check and the check circuit completes the check; when the data bit of the check result is the first data string, the initial monitoring data in the monitoring storage area is not rewritten; when the check result data bit is the second data string, the initial monitoring data in the monitoring storage area is rewritten. The external system is convenient to embed a trigger signal for detecting the trigger check circuit in the input data stream, and the magnetic storage structure is convenient to output a check result to the outside.
In a second aspect, the present invention further provides a method for ascertaining interference based on the magnetic storage structure, where the method for ascertaining interference includes: writing initial monitoring data into the monitoring storage area; generating check data according to the initial monitoring data; writing the verification data into a verification storage area; acquiring monitoring data currently stored in a monitoring storage area; the check data is used to check the detection data to determine whether the initial monitoring data written into the monitoring storage area is rewritten.
In the above scheme, the monitoring storage area is divided into the magnetic storage area, and the initial monitoring data is written into the monitoring storage area; dividing a check storage area in the non-magnetic storage area to store check data generated according to the initial monitoring data; the checking circuit is used for checking the monitoring data currently stored in the monitoring storage area by using the checking data to judge whether the initial monitoring data written in the monitoring storage area is rewritten or not. Based on the fact that the main storage area and the monitoring storage area which are also magnetic storage have the same interference characteristics, when the temperature and the magnetic field strength of the external environment change, the situation that the data of the monitoring storage area is rewritten can fully represent the situation of the main storage area, whether the data stored in the main storage area is rewritten is deduced through the situation that the data of the monitoring storage area is rewritten, whether the stored data is rewritten under the interference of severe environments such as high temperature and high strength magnetic fields of the magnetic storage structure is ascertained, and the accuracy of ascertaining the interference can be improved. The above-mentioned shown ascertaining interference structure is implemented by utilizing the magnetic memory array and non-magnetic memory array existing in the magnetic random access memory itself, and can implement monitoring whether the data in the main memory area of the magnetic memory is rewritten due to external interference without adding additional sensor devices or additional preparation step processes, so that the structure is simplified and the cost is reduced. That is, the present invention makes the magnetic memory structure detect the data rewriting condition caused by the disturbance itself and feed back to the external system, and the external system makes countermeasures. In addition, the structure and the method for detecting the interference are higher in detection effect and higher in accuracy in application scenes in which interference factors such as high temperature, a strong magnetic field and the like are not normal, namely when the occurrence of the strong interference environment in the scenes is low probability (abnormal) or artificial intention.
In a specific embodiment, the non-magnetic storage area is further provided with a configuration storage area containing a check identification bit. The method for ascertaining the interference further comprises the following steps: when the initial monitoring data in the monitoring storage area is not rewritten, the verification identification bit is written into the first identification; when the initial monitoring data in the monitoring storage area is rewritten, the verification identification bit is written into the second identification. The configuration storage area containing the check identification bits is partitioned in the non-magnetic storage area, so that the check result can be stored, and an external system can conveniently obtain the data interference condition of the main storage area by reading the check identification bits.
In a specific embodiment, writing initial monitoring data to the monitoring storage area includes: and writing factory information of the magnetic storage structure into the monitoring storage area, and adopting the factory information which is required to be stored into the magnetic storage structure as initial monitoring data to reduce the loss of the storage space.
In a specific embodiment, generating the verification data from the initial monitoring data includes: the initial monitoring data is used as the check data, so that the check data is generated only by copying without calculation, and the calculated amount is reduced.
In a specific embodiment, generating the verification data from the initial monitoring data includes: the initial monitoring data is input into a checking algorithm to generate checking data corresponding to the initial monitoring data, and the corresponding checking data is obtained according to the input initial monitoring data through the checking algorithm, so that the length of the checking data can be reduced, and the storage space required by a checking storage area is reduced.
In a specific embodiment, the verification algorithm is a parity algorithm, a Hamming code algorithm, a CRC16/32 verification algorithm, an Adler-32 verification algorithm, an MD5 verification algorithm, or a SHA1/256/512 verification algorithm, so as to generate verification data corresponding to the initial monitoring data.
In a specific embodiment, the verification circuit is further connected with a verification trigger circuit. Before acquiring the monitoring data currently stored in the monitoring storage area, the interference detection method comprises the following steps: the verification trigger circuit is used for triggering the verification circuit to verify, so that the verification circuit is conveniently triggered to detect.
In a specific embodiment, the verification trigger circuit is further connected with an input control circuit, and the verification circuit is further connected with an output control circuit. Before the verification is performed by triggering the verification circuit through the verification trigger circuit, the interference detection method further comprises the following steps: the input control circuit inputs a data stream containing a check trigger bit; the "0" and "1" on the check trigger bit respectively represent that the check circuit is triggered to perform check detection and the check circuit is not triggered to perform check. After checking the detection data using the check data to determine whether the initial monitoring data written in the monitoring storage area is rewritten, the interference ascertaining method further includes: the output control circuit outputs a data stream containing a check completion bit and a check result data bit; wherein, 0 and 1 on the check completion bit respectively indicate that the check circuit does not complete the check and the check circuit completes the check; when the data bit of the check result is the first data string, the initial monitoring data in the monitoring storage area is not rewritten; when the check result data bit is the second data string, the initial monitoring data in the monitoring storage area is rewritten. The external system is convenient to embed a trigger signal for detecting the trigger check circuit in the input data stream, and the magnetic storage structure is convenient to output a check result to the outside.
Drawings
FIG. 1 is a block diagram of a magnetic memory structure according to an embodiment of the present invention;
FIG. 2 is a block diagram of another magnetic storage structure provided in accordance with an embodiment of the present invention;
FIG. 3 is a block diagram of another magnetic storage structure provided in accordance with an embodiment of the present invention;
FIG. 4 is a block diagram of another magnetic storage structure provided in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram of a monitoring storage area distributed in a main storage area according to an embodiment of the present invention;
fig. 6 is a flowchart of a method for ascertaining interference according to an embodiment of the present invention;
fig. 7 is a flowchart of another interference detection method according to an embodiment of the present invention.
Reference numerals:
11-Main memory area 12-monitoring memory area 21-check memory area
22-configuration memory area 221-check identification bit 30-check circuit
31-check trigger circuit 41-input control circuit 42-output control circuit
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to facilitate understanding of the magnetic storage structure provided by the embodiments of the present invention, an application scenario of the magnetic storage structure provided by the embodiments of the present invention will be first described, where the magnetic storage structure is applied to a memory such as, but not limited to, MRAM, and the like, and of course, may also be applied to a server including a magnetic memory. The magnetic memory structure is described in detail below with reference to the accompanying drawings.
Referring to fig. 1 and 6, the magnetic memory structure provided in the embodiment of the present invention includes a magnetic memory area, a non-magnetic memory area, and a verification circuit 30. The magnetic memory area includes a main memory area 11 and a monitor memory area 12, and the monitor memory area 12 is used for writing initial monitor data. The non-magnetic storage area includes a check storage area 21, and the check storage area 21 is used for writing check data, which is generated based on the initial monitoring data. The checking circuit 30 is used for acquiring the monitoring data currently stored in the monitoring storage area 12, and checking the monitoring data by using the checking data to determine whether the initial monitoring data written in the monitoring storage area 12 is rewritten.
In the above-described scheme, by dividing the monitoring storage area 12 in the magnetic storage area, initial monitoring data is written in the monitoring storage area 12; a check memory area 21 is partitioned in the non-magnetic memory area to store check data generated from the initial monitoring data; the initial monitoring data written in the monitoring storage area 12 is judged whether to be rewritten or not by the verification circuit 30 verifying the monitoring data currently stored in the monitoring storage area 12 using the verification data. Based on the fact that the main storage area 11 and the monitoring storage area 12 which are also magnetic storage have the same interference characteristics, when the temperature and the magnetic field intensity of the external environment change, the situation that the data of the monitoring storage area 12 is rewritten can fully represent the situation of the main storage area 11, whether the data stored in the main storage area 11 is rewritten is deduced by monitoring the data rewriting situation of the storage area 12, whether the stored data is rewritten under the interference of the severe environments such as high temperature, high intensity magnetic field and the like of the magnetic storage structure is ascertained, and the accuracy of ascertaining the interference can be improved. The above-described detection interference structure is implemented by using the magnetic memory array and the nonmagnetic memory array existing in the magnetic random access memory, so that it is possible to monitor whether the data in the main memory area 11 of the magnetic memory is rewritten due to external interference without adding additional sensor devices or additional manufacturing processes, thereby simplifying the structure and reducing the cost. That is, the present invention makes the magnetic memory structure detect the data rewriting condition caused by the disturbance itself and feed back to the external system, and the external system makes countermeasures. In addition, the structure and the method for detecting the interference are higher in detection effect and higher in accuracy in application scenes in which interference factors such as high temperature, a strong magnetic field and the like are not normal, namely when the occurrence of the strong interference environment in the scenes is low probability (abnormal) or artificial intention. The following describes each of the above structures in detail with reference to the accompanying drawings.
When the main memory area 11 is provided, referring to fig. 1, the magnetic memory area includes a plurality of magnetic memory units, and each magnetic memory unit uses a flipping magnetic field to flip between two states respectively representing "0" and "1", thereby realizing data storage, and is specifically used for storing data of an external system. In particular, each magnetic memory cell may include a magnetic tunnel junction for storing data. The magnetic memory area is divided into a main memory area 11 and a monitor memory area 12. The main memory area 11 is used for normal data storage, which is not used for verification by the subsequent verification circuit 30. When the main memory area 11 is specifically provided, referring to fig. 5, at least one memory block (Bank) may be included in the main memory area 11, and a plurality of magnetic tunnel junctions arranged in an array are arranged in each memory block. For example, when the memory space supported by the main memory area 11 is 1GB, four memory blocks each supporting 256MB may be provided.
As shown in fig. 1 and 6, the magnetic storage area is further divided into a monitor storage area 12, and the monitor storage area 12 is used for writing initial monitor data, and whether the primary storage area 11 is rewritten due to disturbance is determined by checking whether the initial monitor data in the monitor storage area 12 is rewritten later. In particular dividing the monitor storage region 12, at least one monitor storage region 12 may be divided in the magnetic storage region. The monitoring storage area 12 may be located outside the main storage area 11, i.e. the monitoring storage area 12 is located at an edge position of the main storage area 11. Of course, at least one monitoring storage area 12 may be arranged in the main storage area 11, so that the data rewriting condition of the monitoring storage area 12 can more accurately reflect the data rewriting condition in the main storage area 11. Specifically, 1, 2, 3, 4, 8, 12, etc. of the monitoring memory areas 12 may be divided among the magnetic memory areas. For example, one monitoring storage area 12 may be divided at each of four corner areas of the magnetic storage area, and one monitoring storage area 12 may be divided at a central position area of the magnetic storage area. Of course, referring to fig. 5, at least one monitoring storage area 12 may be distributed in each storage block, so that the data rewriting condition of the monitoring storage area 12 can be reflected more accurately by considering the uneven distribution phenomenon of the disturbing magnetic field. It should be understood that the above only illustrates a few ways of distinguishing the monitoring storage area 12 in the magnetic storage area, but that other ways may be used.
When the initial monitoring data is specifically selected, any data string may be used as the monitoring data. In a preferred embodiment, factory information, such as but not limited to a chip serial number, that needs to be identified at the time of factory shipment, may be used as the initial monitoring data. At this time, when the initial monitoring data is written into the monitoring storage area 12, specifically, the factory information of the magnetic storage structure is written into the monitoring storage area 12, the factory information which must be stored in the magnetic storage structure is adopted as the initial monitoring data, and the verification data corresponding to the initial monitoring data is also stored in the verification storage area 21 of the magnetic storage structure, and the monitoring data can be reversely pushed out through the verification data, so that no additional storage space is required to be allocated to store the factory information which is the initial monitoring data, and the loss of the storage space is reduced. In addition, the monitoring data may be written into the monitoring memory area 12 after initializing the monitoring memory area 12 when performing wafer level testing of the magnetic memory structure.
With continued reference to fig. 1, the magnetic memory structure is further provided with a non-magnetic memory area, and specifically, the memory area of the magnetic memory structure may be divided into a magnetic memory area and a non-magnetic memory area during a chip design stage of the magnetic memory structure. The storage principle of the memory cells in the non-magnetic storage area does not depend on the switching magnetic field, so that the data stored in the non-magnetic storage area is not rewritten when the magnetic storage structure is magnetically disturbed. When the non-magnetic storage area is specifically set, other non-magnetic NVM (non-volatile memory) may be used, and specifically, a one-time programmable memory may be used as the non-magnetic storage area for storing configuration information, identification information, and the like of the magnetic storage structure. Prevent the verification data from being rewritten due to interference. It should be understood that the non-magnetic memory area is not limited to the one-time programmable memory arrangement, and that other non-magnetic memories may be used as the non-magnetic memory area. As shown in fig. 1 and 6, a check memory area 21 is divided into a non-magnetic memory area, and the check memory area 21 is used for writing check data, wherein the check data is generated according to initial monitoring data, that is, the check data has a corresponding association relation with the initial detection data. When there is a change between the monitoring data read out from the monitoring storage area 12 and the initial detection data, it can be verified that the monitoring data has changed by verifying the data, thereby verifying whether the initial monitoring data written into the monitoring storage area 12 is rewritten. In addition, the verification data may be written into the verification memory bits after initializing the configuration memory area 22 when wafer level testing is performed on the magnetic memory structure.
When the check data is specifically generated, the check data may be the same as the monitor data, that is, the lengths of the data strings of the check data and the data strings of the monitor data and the values of each data bit are the same, so that when the check is performed subsequently, the check data and the monitor data are directly compared, whether the monitor data are different from the check data or not can be found, and whether the initial monitor data written into the monitor storage area 12 is rewritten or not can be judged. And when the verification data is generated, only copying is needed, calculation is not needed, and the calculated amount is reduced.
It should be noted that the way the verification data is generated may take other ways than those shown above. For example, a verification algorithm may also be employed to generate verification data corresponding to the initial monitoring data. Specifically, the initial monitoring data may be input into a verification algorithm to generate verification data corresponding to the initial monitoring data. Corresponding check data is obtained according to the input initial monitoring data through a check algorithm, so that the length of the check data can be reduced, and the storage space required by the check storage area 21 can be reduced. When the verification algorithm is specifically selected, a plurality of verification algorithms capable of generating a unique corresponding verification code may be employed. Specifically, the checking algorithm may be a parity checking algorithm, a Hamming code algorithm, a CRC16/32 checking algorithm, an Adler-32 checking algorithm, an MD5 checking algorithm, or an SHA1/256/512 checking algorithm, so as to generate checking data corresponding to the initial monitoring data.
As shown in fig. 1, 6 and 7, a checking circuit 30 is further provided, where the checking circuit 30 can obtain the currently stored monitoring data in the monitoring storage area 12, and the specifically provided checking circuit 30 may include a reading circuit that directly reads the currently stored monitoring data from the monitoring storage area 12. It is also possible that the verification circuit 30 does not have a read circuit for directly reading the monitoring data currently stored in the monitoring storage area 12, but is connected to a read circuit of the magnetic storage area, from which the monitoring data currently stored in the monitoring storage area 12 is obtained. Of course, the verification circuitry 30 may also be capable of obtaining the verification data stored therein from the verification memory area 21, and a specific implementation may include a read circuit for reading the verification memory area 21, or may be connected to the read circuit without including the read circuit, so as to obtain the verification data stored in the verification memory area 21. The verification circuit 30 is also configured to verify the monitor data using the verification data to determine whether the initial monitor data written into the monitor storage area 12 is overwritten. When judging whether the magnetic storage structure is interfered, based on the fact that the main storage area 11 and the monitoring storage area 12 which are also magnetic storage have the same interference characteristics, when the temperature and the magnetic field intensity of the external environment change, the situation that the data of the monitoring storage area 12 is rewritten can fully represent the situation of the main storage area 11, whether the data stored in the main storage area 11 is rewritten is deduced through the situation that the data of the monitoring storage area 12 is rewritten, whether the stored data is rewritten under the interference of the severe environment such as a high temperature and a high intensity magnetic field of the magnetic storage structure is ascertained, and the accuracy of ascertaining the interference can be improved. The above-described detection interference structure is implemented by using the magnetic memory array and the nonmagnetic memory array existing in the magnetic random access memory, so that it is possible to monitor whether the data in the main memory area 11 of the magnetic memory is rewritten due to external interference without adding additional sensor devices or additional manufacturing processes, thereby simplifying the structure and reducing the cost. That is, the magnetic memory structure detects the data rewriting condition due to the disturbance itself, and feeds back the data rewriting condition to the external system, thereby performing countermeasures by the external system. In addition, the structure and the method for detecting the interference are higher in detection effect and higher in accuracy in application scenes in which interference factors such as high temperature, a strong magnetic field and the like are not normal, namely when the occurrence of the strong interference environment in the scenes is low probability (abnormal) or artificial intention.
In addition, referring to fig. 2, 6 and 7, the non-magnetic storage area may be further provided with a configuration storage area 22, that is, the storage units in the configuration storage area 22 are all non-magnetic storage units. As shown in fig. 2, a check identification bit 221 is divided in the configuration storage area 22, and the check identification bit 221 is used to write the first identification and the second identification. Wherein the first identification may indicate that the initial monitoring data written into the monitoring storage area 12 has not been overwritten, i.e., that it is ascertained that the magnetic storage structure is disturbed sufficiently to overwrite the data stored therein; the second flag indicates that the initial monitoring data written into the monitoring storage area 12 is overwritten, i.e., that it is ascertained that the magnetic storage structure is not disturbed sufficiently to overwrite the data stored therein. The first flag may be a high level signal and the second flag may be a low level signal. Of course, the reverse arrangement is also possible. In addition, a first one of the identifiers may be represented by a binary "1" and a second one of the identifiers may be represented by a binary "0" or vice versa. By dividing the configuration storage area 22 containing the check identification bit 221 in the non-magnetic storage area, the check result can be stored, so that an external system can conveniently obtain the data interference condition of the main storage area 11 by reading the check identification bit 221.
In addition, referring to fig. 3, a verification trigger circuit 31 may be further provided, where the verification trigger circuit 31 is connected to the verification circuit 30 to send a signal for triggering verification to the verification circuit 30, so as to trigger the verification circuit 30 to perform verification, so as to trigger the verification circuit 30 to perform detection. The verification trigger circuit 31 may be connected to the read circuit of the magnetic storage area to automatically trigger the verification circuit 30 to verify by the verification trigger circuit 31 after each read operation. Of course, the verification trigger circuit 31 may also be connected to a general control module in the magnetic storage structure, and the general control module issues an instruction for triggering the verification circuit 30 to perform verification.
Even further, the verify trigger circuit 31 may trigger the verify circuit 30 by a verify command signal received from the outside through the magnetic storage structure. Specifically, referring to fig. 4 and 7, the magnetic memory structure may further include an input control circuit 41 and an output control circuit 42. The input control circuit 41 is connected to the check trigger circuit 31, and is configured to input a data stream containing check trigger bits, where the data stream may contain other data to be stored in the main memory area 11 in addition to the data stored in the check trigger bits. A binary "0" or "1" may be written on the check trigger bit, where binary "0" and "1" respectively indicate that the check circuit 30 is triggered to perform check detection and that the check circuit 30 is not triggered to perform check. Specifically, when "0" is written on the check trigger bit, it may indicate that the check circuit 30 is not triggered to perform check detection, and when "1" is written on the check trigger bit, it may indicate that the check circuit 30 is triggered to perform check detection, and the check trigger circuit 31 triggers the check circuit 30 to perform check in the above manner. Of course, the opposite representation may also be used. Of course, the data stream received by the input control circuit 41 may have other data besides the check trigger bit, and the data may be the data to be stored to be written into the main storage area 11, that is, the command signal for triggering the check is embedded into the check trigger bit to control the check trigger circuit 31 to trigger the check circuit 30 to perform the check. When the input control circuit 41 inputs the received data stream to the read-write circuit of the magnetic memory area to perform normal read-write operation, and when the check trigger bit is written with "0" to indicate that the check detection is not triggered, normal read-write operation is performed, and the data to be stored in the data stream to be written into the main memory area 11 is written into the corresponding memory area, specifically, the write operation can be realized through a row decoder, a column decoder, an input control module and an input module. When the data stream received by the control input current also contains command information for executing read operation, corresponding read operation can be executed through the input control module, the input module, the row decoder, the column decoder and the sense amplifier, so as to acquire target data.
The output control circuit 42 is connected to the verification circuit 30 and is configured to output a data stream including the verification completion bits and the verification result data bits. The "0" and "1" on the check completion bits indicate that the check circuit 30 has not completed the check and the check circuit 30 has completed the check, respectively. Specifically, a "0" on the check completion bit may be made to indicate that the check circuit 30 does not complete the check, and when the check trigger bit in the data stream received by the input control circuit 41 is also "0" to indicate that the check is not triggered, the control output circuit outputs a "0" to indicate that the check circuit 30 does not complete the check. When the check trigger in the data stream received by the input control circuit 41 is "1", which indicates that the check circuit 30 is triggered to perform the check, the output control circuit 42 writes "1" on the check completion bit of the data stream output by the output control circuit when the check circuit 30 is triggered to complete the check, which indicates that the check circuit 30 completes the check. Of course, the opposite representation may also be used.
Correspondingly, when the output control circuit 42 writes "1" on the verification completion bit in the data stream outputted by the output control circuit, which indicates that the verification circuit 30 completes verification, the output control circuit 42 needs to further obtain the verification result, where the verification result may be that the initial monitoring data in the monitoring storage area 12 is not rewritten, or that the initial monitoring data in the monitoring storage area 12 is rewritten. And writing the verification result on the verification result data bit when the verification result is embedded into the output data stream. For example, when the check result data bit is a first data string, the first data string may be, for example, a data string such as AA. When the check result data bit is a second data string, the first data string may be, for example, a 55..55 data string, etc., identifying that the initial monitoring data in the monitoring storage area 12 is rewritten, i.e., that the data is rewritten by interference. The trigger signal for detecting the trigger check circuit 30 is conveniently embedded in the input data stream by an external system, and the check result is conveniently output to the outside by the magnetic storage structure. In addition, when the output control circuit 42 writes "0" on the verification completion bit in the data stream that it outputs, indicating that the verification circuit 30 has not completed the verification, a third data string, such as 00..00, that is different from the first data string and the second data string, may be written on the verification result data bit, indicating that the verification result has not been output this time because the verification has not been completed. So that the verification result is output at the same time each time the control output circuit outputs the data stream.
In the above-described arrangement, by dividing the monitoring storage area 12 in the magnetic storage area, initial monitoring data is written in the monitoring storage area 12; a check memory area 21 is partitioned in the non-magnetic memory area to store check data generated from the initial monitoring data; the initial monitoring data written in the monitoring storage area 12 is judged whether to be rewritten or not by the verification circuit 30 verifying the monitoring data currently stored in the monitoring storage area 12 using the verification data. Based on the fact that the main storage area 11 and the monitoring storage area 12 which are also magnetic storage have the same interference characteristics, when the temperature and the magnetic field intensity of the external environment change, the situation that the data of the monitoring storage area 12 is rewritten can fully represent the situation of the main storage area 11, whether the data stored in the main storage area 11 is rewritten is deduced by monitoring the data rewriting situation of the storage area 12, whether the stored data is rewritten under the interference of the severe environments such as high temperature, high intensity magnetic field and the like of the magnetic storage structure is ascertained, and the accuracy of ascertaining the interference can be improved. The above-described detection interference structure is implemented by using the magnetic memory array and the nonmagnetic memory array existing in the magnetic random access memory, so that it is possible to monitor whether the data in the main memory area 11 of the magnetic memory is rewritten due to external interference without adding additional sensor devices or additional manufacturing processes, thereby simplifying the structure and reducing the cost. That is, the present invention makes the magnetic memory structure detect the data rewriting condition caused by the disturbance itself and feed back to the external system, and the external system makes countermeasures. In addition, the structure and the method for detecting the interference are higher in detection effect and higher in accuracy in application scenes in which interference factors such as high temperature, a strong magnetic field and the like are not normal, namely when the occurrence of the strong interference environment in the scenes is low probability (abnormal) or artificial intention.
In addition, the embodiment of the invention also provides a method for ascertaining interference based on the magnetic storage structure, referring to fig. 1 and 6, the method for ascertaining interference comprises the following steps:
writing initial monitoring data to the monitoring storage area 12;
generating check data according to the initial monitoring data;
writing the verification data into the verification storage area 21;
acquiring monitoring data currently stored in the monitoring storage area 12;
the check data is used to check the detection data to determine whether the initial monitoring data written in the monitoring storage area 12 is rewritten.
In the above-described scheme, by dividing the monitoring storage area 12 in the magnetic storage area, initial monitoring data is written in the monitoring storage area 12; a check memory area 21 is partitioned in the non-magnetic memory area to store check data generated from the initial monitoring data; the initial monitoring data written in the monitoring storage area 12 is judged whether to be rewritten or not by the verification circuit 30 verifying the monitoring data currently stored in the monitoring storage area 12 using the verification data. Based on the fact that the main storage area 11 and the monitoring storage area 12 which are also magnetic storage have the same interference characteristics, when the temperature and the magnetic field intensity of the external environment change, the situation that the data of the monitoring storage area 12 is rewritten can fully represent the situation of the main storage area 11, whether the data stored in the main storage area 11 is rewritten is deduced by monitoring the data rewriting situation of the storage area 12, whether the stored data is rewritten under the interference of the severe environments such as high temperature, high intensity magnetic field and the like of the magnetic storage structure is ascertained, and the accuracy of ascertaining the interference can be improved. The above-described detection interference structure is implemented by using the magnetic memory array and the nonmagnetic memory array existing in the magnetic random access memory, so that it is possible to monitor whether the data in the main memory area 11 of the magnetic memory is rewritten due to external interference without adding additional sensor devices or additional manufacturing processes, thereby simplifying the structure and reducing the cost. That is, the present invention makes the magnetic memory structure detect the data rewriting condition caused by the disturbance itself and feed back to the external system, and the external system makes countermeasures. In addition, the structure and the method for detecting the interference are higher in detection effect and higher in accuracy in application scenes in which interference factors such as high temperature, a strong magnetic field and the like are not normal, namely when the occurrence of the strong interference environment in the scenes is low probability (abnormal) or artificial intention.
For the description of the above steps, reference may be made specifically to the foregoing description of the magnetic storage structure portion, and details are not repeated herein.
Referring to fig. 2 and 6, the non-magnetic storage area may be provided with a configuration storage area 22 including a verification flag bit 221. The method for ascertaining the interference further comprises the following steps: upon judging that the initial monitoring data in the monitoring storage area 12 is not rewritten, the check identification bit 221 is written into the first identification; upon determining that the initial monitoring data in the monitoring storage area 12 is rewritten, the check flag bit 221 is written with the second flag. By dividing the configuration storage area 22 containing the check identification bit 221 in the non-magnetic storage area, the check result can be stored, so that an external system can conveniently obtain the data interference condition of the main storage area 11 by reading the check identification bit 221. Specific implementations refer to the foregoing description of the magnetic storage structure and are not repeated here.
Specifically, when initial monitoring data is written into the monitoring storage area 12, factory information of the magnetic storage structure can be written into the monitoring storage area 12, and factory information which must be stored in the magnetic storage structure is adopted as the initial monitoring data, so that the loss of storage space is reduced. The selection manner of the factory information can refer to the description of the magnetic storage structure part, and further is not described in detail.
When the verification data is generated specifically according to the initial monitoring data, the initial monitoring data can be used as the verification data, so that the verification data is generated only by copying without calculation, and the calculated amount is reduced. The specific alignment may refer to the description of the foregoing magnetic storage structure portion, and further description is omitted.
In addition, the verification data may be generated in other manners, for example, the initial monitoring data may be input into a verification algorithm to generate verification data corresponding to the initial monitoring data, and the verification algorithm obtains the corresponding verification data according to the input initial monitoring data, so that the length of the verification data can be reduced, and the storage space required by the verification storage area 21 can be reduced. The verification algorithm may be a parity algorithm, a Hamming code algorithm, a CRC16/32 verification algorithm, an Adler-32 verification algorithm, an MD5 verification algorithm, or a SHA1/256/512 verification algorithm, so as to generate verification data corresponding to the initial monitoring data. The specific generation manner may refer to the description of the foregoing magnetic storage structure portion, and further description is omitted.
In addition, referring to fig. 3, a verification trigger circuit 31 may be further connected to the verification circuit 30. Prior to acquiring the monitoring data currently stored in the monitoring storage area 12, the method of ascertaining the interference includes: the verification trigger circuit 31 triggers the verification circuit 30 to verify, so that the verification circuit 30 is triggered to detect conveniently. Specific implementation is referred to the description of the foregoing magnetic storage structure portion, and will not be repeated here.
Referring to fig. 4, 6 and 7, the verification trigger circuit 31 may be connected to an input control circuit 41, and the verification circuit 30 may be connected to an output control circuit 42. The method of ascertaining interference further includes, before the verification by the verification trigger circuit 31 triggers the verification circuit 30: the input control circuit 41 inputs a data stream containing check trigger bits; wherein "0" and "1" on the check trigger bit respectively indicate that the check circuit 30 is triggered to perform check detection and that the check circuit 30 is not triggered to perform check. After verifying the detection data using the verification data to determine whether the initial monitoring data written in the monitoring storage area 12 is rewritten, the tamper-evident method further includes: the output control circuit 42 outputs a data stream including the check completion bits and the check result data bits; wherein "0" and "1" on the check completion bits respectively indicate that the check circuit 30 does not complete the check and the check circuit 30 completes the check; when the check result data bit is the first data string, it indicates that the initial monitoring data in the monitoring storage area 12 is not rewritten; when the check result data bit is the second data string, the initial monitoring data in the monitoring storage area 12 is rewritten. The trigger signal for detecting the trigger check circuit 30 is conveniently embedded in the input data stream by an external system, and the check result is conveniently output to the outside by the magnetic storage structure. Specific implementation is referred to the description of the foregoing magnetic storage structure portion, and will not be repeated here.
Writing initial monitoring data in the monitoring storage area 12 by dividing the monitoring storage area 12 in the magnetic storage area; a check memory area 21 is partitioned in the non-magnetic memory area to store check data generated from the initial monitoring data; the initial monitoring data written in the monitoring storage area 12 is judged whether to be rewritten or not by the verification circuit 30 verifying the monitoring data currently stored in the monitoring storage area 12 using the verification data. Based on the fact that the main storage area 11 and the monitoring storage area 12 which are also magnetic storage have the same interference characteristics, when the temperature and the magnetic field intensity of the external environment change, the situation that the data of the monitoring storage area 12 is rewritten can fully represent the situation of the main storage area 11, whether the data stored in the main storage area 11 is rewritten is deduced by monitoring the data rewriting situation of the storage area 12, whether the stored data is rewritten under the interference of the severe environments such as high temperature, high intensity magnetic field and the like of the magnetic storage structure is ascertained, and the accuracy of ascertaining the interference can be improved. The above-described detection interference structure is implemented by using the magnetic memory array and the nonmagnetic memory array existing in the magnetic random access memory, so that it is possible to monitor whether the data in the main memory area 11 of the magnetic memory is rewritten due to external interference without adding additional sensor devices or additional manufacturing processes, thereby simplifying the structure and reducing the cost. That is, the present invention makes the magnetic memory structure detect the data rewriting condition caused by the disturbance itself and feed back to the external system, and the external system makes countermeasures. In addition, the structure and the method for detecting the interference are higher in detection effect and higher in accuracy in application scenes in which interference factors such as high temperature, a strong magnetic field and the like are not normal, namely when the occurrence of the strong interference environment in the scenes is low probability (abnormal) or artificial intention.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (15)

1. A magnetic memory structure comprising:
the magnetic storage area comprises a main storage area and a monitoring storage area, wherein the monitoring storage area is used for writing initial monitoring data;
a non-magnetic storage area including a check storage area; the check storage area is used for writing check data, and the check data is generated according to the initial monitoring data;
and the verification circuit is used for acquiring the monitoring data currently stored in the monitoring storage area and verifying the monitoring data by using the verification data so as to judge whether the initial monitoring data written in the monitoring storage area is rewritten or not.
2. The magnetic memory structure of claim 1 wherein the non-magnetic memory area is further provided with a configuration memory area containing a check identification bit;
The check identification bit is used for writing a first identification and a second identification; the first flag indicates that the initial monitoring data written in the monitoring storage area is not rewritten, and the second flag indicates that the initial monitoring data written in the monitoring storage area is rewritten.
3. The magnetic memory structure of claim 1 wherein the number of the monitor storage areas is at least one; and the at least one monitoring storage area is distributed within the primary storage area.
4. A magnetic storage structure as claimed in claim 3, wherein said primary storage area comprises at least one storage block, each storage block having at least one of said monitor storage areas distributed therein.
5. The magnetic memory structure of claim 1 wherein the non-magnetic memory region is a one-time programmable memory.
6. The magnetic storage structure of claim 1, further comprising: and the verification trigger circuit is connected with the verification circuit to trigger the verification circuit to verify.
7. The magnetic storage structure of claim 6, further comprising:
the input control circuit is connected with the check trigger circuit and is used for inputting a data stream containing check trigger bits; wherein, 0 and 1 on the check trigger bit respectively indicate that the check circuit is triggered to check and detect and the check circuit is not triggered to check;
The output control circuit is connected with the checking circuit and is used for outputting a data stream containing checking completion bits and checking result data bits; wherein, 0 and 1 on the check completion bit respectively indicate that the check circuit does not complete check and the check circuit completes check; when the check result data bit is a first data string, the initial monitoring data in the monitoring storage area is not rewritten; and when the check result data bit is a second data string, the initial monitoring data in the monitoring storage area is identified to be rewritten.
8. A method of ascertaining interference based on the magnetic memory structure of claim 1, comprising:
writing initial monitoring data into the monitoring storage area;
generating check data according to the initial monitoring data;
writing the check data into the check storage area;
acquiring monitoring data currently stored in the monitoring storage area;
and verifying the detection data by using the verification data to judge whether the initial monitoring data written into the monitoring storage area is rewritten or not.
9. The tamper-evident method of claim 8, wherein the non-magnetic storage area is further provided with a configuration storage area containing a check identification bit;
The interference ascertaining method further comprises the following steps:
when the initial monitoring data in the monitoring storage area is not rewritten, the verification identification bit is written into a first identification;
and when the initial monitoring data in the monitoring storage area is judged to be rewritten, the verification identification bit is written into a second identification.
10. The tamper-detection method of claim 8, wherein the writing initial monitoring data to the monitoring storage area comprises:
and writing factory information of the magnetic storage structure into the monitoring storage area.
11. The method of ascertaining interference as claimed in claim 8, wherein said generating check data from said initial monitoring data comprises:
and taking the initial monitoring data as the verification data.
12. The method of ascertaining interference as claimed in claim 8, wherein said generating check data from said initial monitoring data comprises:
and inputting the initial monitoring data into a verification algorithm to generate the verification data corresponding to the initial monitoring data.
13. The method of ascertaining interference as claimed in claim 12, wherein the checking algorithm is a parity checking algorithm, a Hamming code algorithm, a CRC16/32 checking algorithm, an Adler-32 checking algorithm, an MD5 checking algorithm, or an SHA1/256/512 checking algorithm.
14. The method of ascertaining interference as claimed in claim 8, wherein the verification circuitry is further coupled to a verification trigger circuit;
before the monitoring data currently stored in the monitoring storage area are acquired, the interference ascertaining method comprises the following steps: and triggering the verification circuit to verify through the verification triggering circuit.
15. The method of detecting interference of claim 14, wherein the verification trigger circuit is further connected with an input control circuit, and the verification circuit is further connected with an output control circuit;
before the verification is performed by triggering the verification circuit by the verification triggering circuit, the interference ascertaining method further comprises the following steps:
the input control circuit inputs a data stream containing a check trigger bit; wherein, 0 and 1 on the check trigger bit respectively indicate that the check circuit is triggered to check and detect and the check circuit is not triggered to check;
after verifying the detection data using the verification data to determine whether the initial monitoring data written in the monitoring storage area is rewritten, the ascertaining interference method further includes:
the output control circuit outputs a data stream containing a check completion bit and a check result data bit; wherein, 0 and 1 on the check completion bit respectively indicate that the check circuit does not complete check and the check circuit completes check; when the check result data bit is a first data string, the initial monitoring data in the monitoring storage area is not rewritten; and when the check result data bit is a second data string, the initial monitoring data in the monitoring storage area is identified to be rewritten.
CN202111650578.8A 2021-12-29 2021-12-29 Magnetic storage structure and interference detection method based on same Pending CN116417020A (en)

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