CN116411198B - Method for producing aluminum-silicon intermediate alloy by vapor deposition - Google Patents
Method for producing aluminum-silicon intermediate alloy by vapor deposition Download PDFInfo
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- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 56
- 239000000956 alloy Substances 0.000 title claims abstract description 56
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 60
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 238000000748 compression moulding Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims description 22
- 238000005245 sintering Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 20
- 238000012545 processing Methods 0.000 abstract description 6
- 238000003723 Smelting Methods 0.000 abstract description 5
- 238000005204 segregation Methods 0.000 abstract description 4
- 238000005054 agglomeration Methods 0.000 abstract description 3
- 230000002776 aggregation Effects 0.000 abstract description 3
- 238000001556 precipitation Methods 0.000 abstract description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000003825 pressing Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 description 1
- JYJXGCDOQVBMQY-UHFFFAOYSA-N aluminum tungsten Chemical compound [Al].[W] JYJXGCDOQVBMQY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000009768 microwave sintering Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0408—Light metal alloys
- C22C1/0416—Aluminium-based alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/18—Non-metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
- B22F3/1007—Atmosphere
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Materials Engineering (AREA)
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- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a method for producing an aluminum-silicon intermediate alloy by vapor deposition. According to the method, aluminum liquid is heated and evaporated, aluminum vapor is attached to the surface of crystalline silicon powder, and the silicon element and aluminum are initially alloyed by utilizing the characteristic that the silicon element in an aluminum film diffuses fast. And the treated crystalline silicon powder is subjected to compression molding treatment and sintered to prepare the aluminum-silicon intermediate alloy. Compared with a smelting method, the method can effectively avoid local agglomeration segregation caused by silicon element precipitation, and can simplify the crushing processing flow of the aluminum-silicon intermediate alloy, so that the prepared aluminum-silicon intermediate alloy has the advantages of high purity, high uniformity and easiness in processing.
Description
Technical Field
The invention relates to the technical field of nonferrous metal smelting, in particular to a method for producing an aluminum-silicon intermediate alloy by a vapor deposition method.
Background
Along with the continuous improvement of the requirements of key parts such as aeroengine blades and the like on the high-temperature performance and the durability of the titanium alloy, the addition of Si, cr and the like in the titanium alloy is more and more emphasized, silicon oxide or aluminum oxide is respectively formed in an oxide layer after the elements are added into the titanium alloy, and the oxides are continuous and compact, so that the oxidation activation energy is improved, further oxidation of a metal matrix is prevented, and the oxidation resistance of the high-temperature titanium alloy is integrally improved. Aluminum-silicon master alloy is one of important raw materials for preparing high-temperature titanium alloy and is used for introducing silicon element into the high-temperature titanium alloy. The aluminum-silicon intermediate alloy is easy to locally enrich silicon elements in the cooling process, is difficult to be broken due to high viscosity, and is usually processed in a turning mode, but is easy to oxidize in the turning process, so that the oxygen content of the alloy is high.
CN103233135A discloses a method for preparing an aluminum-silicon intermediate alloy by microwave sintering, which takes metal silicon powder and aluminum powder as raw materials, and the aluminum-silicon intermediate alloy is prepared by sintering at 1100-1200 ℃ for 1-3 h after compression molding. The method can reduce the oxidation of alloy and the segregation and agglomeration of silicon element, but the alloying degree of silicon element and aluminum element is lower by adopting a direct sintering method, and the gas discharge in the blank body is blocked.
CN105543517a discloses a method for preparing an aluminum-silicon intermediate alloy, which comprises the steps of coating industrial silicon particles with aluminum foil and smelting. The method can effectively solve the problem of silicon oxidation in the process of preparing the intermediate alloy, but cannot effectively solve the problems of silicon segregation and difficult processing.
Therefore, how to provide a preparation method of an aluminum-silicon intermediate alloy with high purity, high uniformity and easy processing is a problem to be solved by those skilled in the art.
Disclosure of Invention
In view of this, the present invention provides a method for producing an aluminum-silicon master alloy using vapor deposition.
The technical scheme adopted by the invention is as follows: evaporating aluminum liquid by heating, attaching aluminum vapor to the surface of the crystalline silicon powder, and primarily alloying silicon element and aluminum by utilizing the characteristic of rapid diffusion of silicon element in the aluminum film; and the treated crystalline silicon powder is subjected to compression molding treatment and sintered to prepare the aluminum-silicon intermediate alloy.
In order to achieve the above purpose, the present invention provides the following technical solutions:
A method for producing an aluminum-silicon intermediate alloy by vapor deposition specifically comprises the following steps:
(1) Placing the crushed crystalline silicon powder into a flat disc;
(2) Heating the aluminum ingot to boil to generate aluminum steam;
(3) Opening an argon purging device to enable aluminum steam to flow to the deposition chamber;
(4) Taking out the silicon powder after depositing for a certain time;
(5) Pressing the silicon powder in the step (4) into blocks or strips;
(6) And (5) carrying out vacuum sintering on the pressed blank.
Optionally, the aluminum-silicon intermediate alloy comprises the following components in percentage by mass: si: 5-15 wt% of aluminum: the balance and other unavoidable impurities, and the process method can also be used for producing intermediate alloys such as aluminum tantalum, aluminum tungsten and the like.
Optionally, the device for heating and evaporating aluminum liquid and enabling aluminum vapor to adhere to the surface of the crystal silicon powder mainly comprises three parts, wherein the device comprises: argon purging device, heating evaporating chamber and deposition chamber, the deposition chamber is provided with the metal dish that holds silica flour in the room.
The device has compact structure, can effectively reduce the aluminum vapor transmission path by enabling aluminum vapor to be deposited on the surface of crystal silicon powder through the argon purging device, can inhibit boiling splash of aluminum liquid to a certain extent, can prevent serious oxidation of raw materials in the production process, and can ensure the uniformity and purity of the aluminum-silicon intermediate alloy.
Optionally, in the step (1) of the invention, the granularity range of the crystalline silicon powder is 0.01-0.08 mm, the crystalline silicon is tiled in a metal disc in a deposition chamber, and the thickness is not more than 0.1-2 mm, so as to receive aluminum vapor deposition.
Optionally, the temperature of the heated and evaporated aluminum liquid in the step (2) is 2200-2300 ℃.
Optionally, in the step (4) shown in the invention, the content of silicon element in the aluminum-silicon master alloy is controlled by controlling the placing time of the crystalline silicon powder in the deposition chamber, and the placing time is controlled to be 1-10 min.
Optionally, the silicon powder is pressed into blocks or strips in the step (5), and the pressing pressure ranges from 200 MPa to 300MPa, so that the purpose of the method is to facilitate the crushing treatment after sintering.
Optionally, the vacuum sintering temperature in the step (6) is 700-900 ℃ and the sintering time is 5-9 hours, so as to ensure that the aluminum-silicon intermediate alloy is compact and uniform.
Compared with the prior art, the method for producing the aluminum-silicon intermediate alloy by utilizing vapor deposition has the following excellent effects:
According to the invention, the aluminum liquid is heated and evaporated, aluminum vapor is attached to the surface of the crystalline silicon powder, and the silicon element and aluminum are primarily alloyed by utilizing the characteristic of rapid diffusion of the silicon element in the aluminum film. And the treated crystalline silicon powder is subjected to compression molding treatment and sintered to prepare the aluminum-silicon intermediate alloy. Compared with a smelting method, the method can effectively avoid local agglomeration segregation caused by silicon element precipitation, and can simplify the crushing processing flow of the aluminum-silicon intermediate alloy, so that the prepared aluminum-silicon intermediate alloy has the advantages of high purity, high uniformity and easiness in processing.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of an apparatus for preparing an aluminum-silicon master alloy used in the present invention.
1-Deposition chamber, 2-heating evaporation chamber, 3-argon purging device
Detailed Description
The following description of embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention discloses a method for producing an aluminum-silicon intermediate alloy by vapor deposition.
As shown in fig. 1, the device for heating and evaporating aluminum liquid and attaching aluminum vapor to the surface of crystalline silicon powder mainly comprises three parts, including: a deposition chamber 1, a heating evaporation chamber 2 and an argon purging device 3;
And, a metal disc for containing silicon powder is arranged in the deposition chamber 1.
The technical scheme of the invention will be further described by specifically combining examples.
Example 1
The aluminum liquid is heated and evaporated, aluminum vapor is attached to the surface of the crystalline silicon powder, and the silicon element and the aluminum are preliminarily alloyed by utilizing the characteristic that the silicon element in the aluminum film diffuses fast. And the treated crystalline silicon powder is subjected to compression molding treatment and sintered to prepare the aluminum-silicon intermediate alloy. The method comprises the following specific steps:
(1) Placing the crushed crystalline silicon powder into a flat disc, wherein the average granularity of the crystalline silicon powder is 0.02-0.04 mm, and the thickness is controlled below 1 mm;
(2) Heating the aluminum ingot to 2300 ℃ to generate aluminum steam;
(3) Opening an argon purging device to enable aluminum steam to flow to the deposition chamber;
(4) Taking out the silicon powder after depositing for 10 min;
(5) Pressing the silicon powder in the step (4) into blocks under the pressure of 200 MPa;
(6) Sintering the pressed block blank for 5 hours at 900 ℃;
(7) Component inspection is carried out on different parts of the prepared strip-shaped aluminum-silicon intermediate alloy, the main element taste and impurity content of the strip-shaped aluminum-silicon intermediate alloy are determined, and the uniformity of the strip-shaped aluminum-silicon intermediate alloy is evaluated;
(8) The sintered aluminum-silicon intermediate alloy can be directly crushed without turning.
The results of the composition test of the aluminum-silicon master alloy prepared in this example 1 are shown in the following table:
| Sampling point | Al/wt％ | Si/wt％ | O/wt％ | N/wt％ |
| Upper part | Allowance of | 5.51 | 0.011 | 0.001 |
| In (a) | Allowance of | 5.32 | 0.009 | 0.001 |
| Lower part(s) | Allowance of | 5.28 | 0.010 | 0.001 |
Example 2
The aluminum liquid is heated and evaporated, aluminum vapor is attached to the surface of the crystalline silicon powder, and the silicon element and the aluminum are preliminarily alloyed by utilizing the characteristic that the silicon element in the aluminum film diffuses fast. And the treated crystalline silicon powder is subjected to compression molding treatment and sintered to prepare the aluminum-silicon intermediate alloy. The method comprises the following specific steps:
(1) Placing the crushed crystalline silicon powder into a flat disc, wherein the average granularity of the crystalline silicon powder is 0.06-0.08 mm, and the thickness is controlled below 2 mm;
(2) Heating the aluminum ingot to 2200 ℃ to generate aluminum steam;
(3) Opening an argon purging device to enable aluminum steam to flow to the deposition chamber;
(4) Taking out the silicon powder after 3min of deposition;
(5) Pressing the silicon powder in the step (4) into blocks under the pressure of 300 MPa;
(6) Sintering the pressed block-shaped green body for 9 hours at 700 ℃;
(7) Component inspection is carried out on different parts of the prepared strip-shaped aluminum-silicon intermediate alloy, the main element taste and impurity content of the strip-shaped aluminum-silicon intermediate alloy are determined, and the uniformity of the strip-shaped aluminum-silicon intermediate alloy is evaluated;
(8) The sintered aluminum-silicon intermediate alloy can be directly crushed without turning.
The results of the composition test of the aluminum-silicon master alloy prepared in this example 2 are shown in the following table:
Example 3
The aluminum liquid is heated and evaporated, aluminum vapor is attached to the surface of the crystalline silicon powder, and the silicon element and the aluminum are preliminarily alloyed by utilizing the characteristic that the silicon element in the aluminum film diffuses fast. And the treated crystalline silicon powder is subjected to compression molding treatment and sintered to prepare the aluminum-silicon intermediate alloy. The method comprises the following specific steps:
(1) Placing the crushed crystalline silicon powder into a flat disc, wherein the average granularity of the crystalline silicon powder is 0.04-0.06 mm, and the thickness is controlled below 2 mm;
(2) Heating the aluminum ingot to 2250 ℃ to generate aluminum vapor;
(3) Opening an argon purging device to enable aluminum steam to flow to the deposition chamber;
(4) Taking out the silicon powder after depositing for 5 min;
(5) Pressing the silicon powder in the step (4) into blocks under the pressure of 300 MPa;
(6) Sintering the pressed block-shaped green body for 8 hours at 800 ℃;
(7) Component inspection is carried out on different parts of the prepared strip-shaped aluminum-silicon intermediate alloy, the main element taste and impurity content of the strip-shaped aluminum-silicon intermediate alloy are determined, and the uniformity of the strip-shaped aluminum-silicon intermediate alloy is evaluated;
(8) The sintered aluminum-silicon intermediate alloy can be directly crushed without turning.
The results of the composition test of the aluminum-silicon master alloy prepared in this example 3 are shown in the following table:
| Sampling point | Al/wt％ | Si/wt％ | O/wt％ | N/wt％ |
| Upper part | Allowance of | 10.11 | 0.014 | 0.001 |
| In (a) | Allowance of | 10.25 | 0.012 | 0.001 |
| Lower part(s) | Allowance of | 10.19 | 0.011 | 0.001 |
The aluminum-silicon intermediate alloy prepared in the above embodiments 1-3 has uniform Si element distribution, and the content of O, N and other gas impurities is at a lower level, so that the use requirement of smelting high-temperature titanium alloy is met.
In the embodiment 1, the aluminum-silicon intermediate alloy has the design silicon element content of 5wt%, adopts smaller granularity crystalline silicon, higher aluminum liquid heating temperature and longer deposition time to improve the aluminum vapor deposition rate, achieves the design grade, can apply smaller pressure during compression molding due to smaller granularity crystalline silicon powder, has higher sintering temperature, and can properly shorten the sintering time.
In the embodiment 2, the content of silicon element in the aluminum-silicon intermediate alloy design is 15wt%, and the aluminum vapor deposition rate is reduced by adopting larger-granularity crystalline silicon, lower aluminum liquid heating temperature and shorter deposition time, so that the design grade is achieved, and because the granularity of crystalline silicon powder is larger, larger pressure can be applied during compression molding, and the sintering temperature and sintering time are moderate.
| Parameters (parameters) | Example 1 | Example 2 | Example 3 |
| Grain size of crystalline silicon/mm | 0.02～0.04 | 0.06～0.08 | 0.04～0.06 |
| Thickness of crystalline silicon/mm | 1 | 2 | 2 |
| Heating temperature/DEGC of aluminum liquid | 2300 | 2200 | 2250 |
| Deposition time/min | 10 | 3 | 5 |
| Compression pressure/MPa | 200 | 300 | 300 |
| Sintering temperature/DEGC | 900 | 700 | 800 |
| Sintering time/h | 5 | 9 | 8 |
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (2)
1. A method for producing an aluminum-silicon intermediate alloy by vapor deposition is characterized in that aluminum liquid is heated and evaporated, aluminum vapor is attached to the surface of crystalline silicon powder, and the silicon element and aluminum are preliminarily alloyed by utilizing the characteristic of rapid diffusion of the silicon element in an aluminum film; the treated crystalline silicon powder is subjected to compression molding treatment and sintered to prepare an aluminum-silicon intermediate alloy;
The device for heating and evaporating aluminum liquid and enabling aluminum vapor to adhere to the surface of crystalline silicon powder mainly comprises three parts, and comprises: a deposition chamber (1), a heating evaporation chamber (2) and an argon purging device (3);
A metal disc for containing silicon powder is arranged in the deposition chamber (1);
The temperature of the heated and evaporated aluminum liquid is 2200-2300 ℃; the granularity range of the crystalline silicon powder is 0.01-0.08 mm, the crystalline silicon is tiled in a metal disc in a deposition chamber, and the thickness is 0.1-2 mm;
Controlling the silicon element content in the aluminum-silicon intermediate alloy by controlling the placing time of the crystalline silicon powder in a deposition chamber, wherein the placing time is 1-10 min;
the pressure range of the compression molding is 200-300 MPa, and the compression molding is block-shaped or strip-shaped;
The sintering is vacuum sintering, the sintering temperature is 700-900 ℃, and the sintering time is 5-9 h.
2. The method for producing an aluminum-silicon master alloy by vapor deposition according to claim 1, wherein the aluminum-silicon master alloy comprises the following components in percentage by mass: si: 5-15 wt% of aluminum: the balance and other unavoidable impurities.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310450542.8A CN116411198B (en) | 2023-04-24 | 2023-04-24 | Method for producing aluminum-silicon intermediate alloy by vapor deposition |
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| CN202310450542.8A CN116411198B (en) | 2023-04-24 | 2023-04-24 | Method for producing aluminum-silicon intermediate alloy by vapor deposition |
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| CN116411198B true CN116411198B (en) | 2024-05-28 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811225A (en) * | 2019-03-18 | 2019-05-28 | 河北四通新型金属材料股份有限公司 | A kind of molybdenum aluminium silicon intermediate alloy and preparation method thereof |
| CN111531135A (en) * | 2020-06-01 | 2020-08-14 | 昆明冶金高等专科学校 | Production process of aluminum-silicon intermediate alloy |
| CN112746200A (en) * | 2020-12-29 | 2021-05-04 | 中南大学 | Dispersion strengthening high-silicon aluminum alloy and preparation method thereof |
| WO2022000864A1 (en) * | 2020-06-29 | 2022-01-06 | 西安斯瑞先进铜合金科技有限公司 | Copper-titanium 50 intermediate alloy and method for preparing same by using magnetic suspension smelting process |
| CN115679154A (en) * | 2022-10-27 | 2023-02-03 | 北京航空材料研究院股份有限公司 | Ti-W-Ta-Nb intermediate alloy and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811225A (en) * | 2019-03-18 | 2019-05-28 | 河北四通新型金属材料股份有限公司 | A kind of molybdenum aluminium silicon intermediate alloy and preparation method thereof |
| CN111531135A (en) * | 2020-06-01 | 2020-08-14 | 昆明冶金高等专科学校 | Production process of aluminum-silicon intermediate alloy |
| WO2022000864A1 (en) * | 2020-06-29 | 2022-01-06 | 西安斯瑞先进铜合金科技有限公司 | Copper-titanium 50 intermediate alloy and method for preparing same by using magnetic suspension smelting process |
| CN112746200A (en) * | 2020-12-29 | 2021-05-04 | 中南大学 | Dispersion strengthening high-silicon aluminum alloy and preparation method thereof |
| CN115679154A (en) * | 2022-10-27 | 2023-02-03 | 北京航空材料研究院股份有限公司 | Ti-W-Ta-Nb intermediate alloy and preparation method thereof |
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