CN116403882B - Semiconductor manufacturing system and method for improving semiconductor manufacturing quality - Google Patents
Semiconductor manufacturing system and method for improving semiconductor manufacturing quality Download PDFInfo
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- CN116403882B CN116403882B CN202310677932.9A CN202310677932A CN116403882B CN 116403882 B CN116403882 B CN 116403882B CN 202310677932 A CN202310677932 A CN 202310677932A CN 116403882 B CN116403882 B CN 116403882B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 345
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 285
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000007789 gas Substances 0.000 claims description 82
- 229910052733 gallium Inorganic materials 0.000 claims description 81
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 80
- 238000007789 sealing Methods 0.000 claims description 46
- 239000011229 interlayer Substances 0.000 claims description 29
- 239000007788 liquid Substances 0.000 claims description 28
- 238000001816 cooling Methods 0.000 claims description 27
- 238000009423 ventilation Methods 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 25
- 238000002156 mixing Methods 0.000 claims description 24
- 239000006227 byproduct Substances 0.000 claims description 20
- 238000004891 communication Methods 0.000 claims description 20
- 238000005192 partition Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005086 pumping Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 30
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 29
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 28
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 22
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 22
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 235000019270 ammonium chloride Nutrition 0.000 description 14
- 239000012535 impurity Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 239000000110 cooling liquid Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a semiconductor manufacturing system and a method for improving the quality of semiconductor manufacture, comprising a semiconductor manufacturing shell, a semiconductor manufacturing inner cavity and a semiconductor manufacturing lower shell, wherein the semiconductor manufacturing shell and the semiconductor manufacturing inner cavity are cylindrical shells; the invention ensures the safety of equipment and the quality of produced semiconductors by the reconstruction design of a semiconductor manufacturing system and the re-regulation of a production method.
Description
Technical Field
The invention relates to the technical field of gallium nitride manufacture, in particular to a semiconductor manufacturing system and a method for improving the manufacturing quality of a semiconductor.
Background
In the field of manufacturing third generation semiconductor (gallium nitride), the third generation semiconductor gallium nitride prepared by a method of elongating crystal seeds by vapor phase epitaxy has advantages of high purity, high quality, high lattice matching, etc., but as an emerging semiconductor manufacturing technology, a reaction kettle for gallium nitride manufacturing has the following disadvantages:
(1) Gallium liquid contained in a gallium boat in a reaction kettle is not fully contacted with the introduced hydrogen chloride gas, the gallium chloride gas with sufficient concentration cannot be generated, the fact that the conventional reaction kettle adopts a pipeline to directly introduce the hydrogen chloride gas is particularly reflected in that the hydrogen chloride gas is not fully contacted with the surface of the gallium liquid or only the hydrogen chloride introduced into the gallium boat is simply split (wherein even a vent hole for directly inserting the hydrogen chloride gas into the pipeline is used for directly inserting the gallium liquid, the service life of the pipeline in an inserted part is seriously damaged by the design;
(2) The hydrogen chloride feeding pipeline communicated with the gallium boat is not provided with a device for preventing gallium liquid from volatilizing upwards under the condition that the reaction kettle is not ventilated, the gallium liquid is used as liquid metal, has the characteristic of high boiling point, but can volatilize the gallium liquid and is also the characteristic of liquid substances, and the gallium liquid is used as a substance capable of rapidly decomposing metal, and the volatilization of the gallium liquid into the hydrogen chloride feeding pipeline is destructive to a valve above the hydrogen chloride feeding pipeline, so that the device for preventing the volatilization of the gallium liquid is necessary for prolonging the service life of the reaction kettle;
(3) When preparing gallium nitride by a vapor phase epitaxy method, ammonia gas and gallium chloride gas which is generated in advance are required to be fully mixed to form gallium nitride growth mixed gas, then the gallium nitride growth mixed gas is covered on gallium nitride seeds to grow gallium nitride, in the process, the mixed degree of the growth mixed gas directly influences the growth degree of gallium nitride, the traditional reaction kettle directly feeds the ammonia gas and the gallium chloride gas into the reaction kettle, and crystal seeds are directly arranged below a gallium chloride pipeline feeding port.
Disclosure of Invention
The present invention is directed to a semiconductor manufacturing system and a method for improving the quality of semiconductor manufacturing, which solve the above-mentioned problems.
The invention is realized by the following technical scheme:
generally, a semiconductor manufacturing system includes a semiconductor manufacturing housing, a semiconductor manufacturing cavity, and a semiconductor manufacturing lower shell, the semiconductor manufacturing housing and the semiconductor manufacturing cavity being cylindrical shells, the semiconductor manufacturing cavity being disposed inside the semiconductor manufacturing housing and concentric with the semiconductor manufacturing housing, the semiconductor manufacturing lower shell being disposed at a bottom of the semiconductor manufacturing housing and communicating with the semiconductor manufacturing cavity, the semiconductor manufacturing lower shell being for collecting byproducts generated during manufacturing of a semiconductor.
Preferably, the top of the semiconductor manufacturing shell is provided with a circular semiconductor first sealing cover, the semiconductor first sealing cover is provided with a pipeline communication port, the axle center of the semiconductor first sealing cover is provided with a first communication port of a first pipeline, and the first communication port is provided with a second communication port with a plurality of second pipelines in a circumferential surrounding manner; the first pipeline and the second pipeline penetrate through the first communication port and the second communication port of the corresponding sealing cover to enter the inside of the semiconductor manufacturing shell and are communicated with the semiconductor manufacturing inner cavity; the middle part position of first pipeline is provided with the condensation subassembly, the inside cooling cone that is provided with of condensation subassembly, the axle center of cooling cone and first pipeline are coaxial, and its toper head is towards the semiconductor manufacturing inner chamber, the circumference outside of cooling cone still is fixed with multiunit fin, after the fin is connected outside pipeline and continue to extend outside the pipeline, the fin can take the heat of cooling cone out of the first pipeline, let in hydrogen chloride gas and ammonia gas respectively to the semiconductor reaction inner chamber through first pipeline and second pipeline, make the semiconductor manufacturing inner chamber generate semiconductor environment, and through setting up the condensation subassembly at first pipeline, when making first pipeline stop ventilating, the gallium of volatilizing first pipeline in the gallium boat can be at the condensation subassembly backward flow, prevent volatilizing gallium corruption first pipeline front end's pneumatic valve and first pipeline itself.
Preferably, a circular semiconductor second sealing cover is arranged at the top of the semiconductor manufacturing inner cavity, the axis of the semiconductor second sealing cover and the circumference outer side of the axis are correspondingly communicated with penetrating holes of the first pipeline and the second pipeline, and the first pipeline penetrates through the semiconductor second sealing cover to enter the semiconductor manufacturing inner cavity and is communicated with a gallium boat fixed on the lower side of the semiconductor second sealing cover; the second pipeline circumferentially surrounds the gallium boat of the semiconductor manufacturing inner cavity; the gallium boat is cylindrical, the axis is the same as the axis of the first pipeline, the gallium boat comprises a boat cover and a boat body arranged below the boat cover, a boat diverter is further arranged in the boat cover and the boat body, the boat body is cylindrical, the boat body is circularly sunken along the axis direction to form a boat pool, an output hole is formed in the middle of the boat body, a boat pipe is further fixed on the inner side of the boat body, and the boat pipe can prevent gallium liquid in the boat pool from flowing out; the boat diverter comprises a ventilation disk, wherein the ventilation disk is provided with a strip-shaped through hole with a circumferential array, the axis of the circumferential array of the strip-shaped through hole coincides with the axis of the gallium boat, the direction of the strip-shaped through hole coincides with the circular diameter of the ventilation disk, the edge of the ventilation disk is tightly attached to the circumferential edge of the inner side of the boat body, the ventilation disk can uniformly disperse the air flow which is introduced into the gallium boat by a first pipeline into a boat pool of the boat body, a partition pipe is also vertically fixed at the center of the lower part of the ventilation disk, a ladder strip through hole facing along the partition pipe is also circumferentially arranged on the pipe wall of the partition pipe, the axis of the circumferential array of the ladder strip through hole coincides with the axis of the partition pipe, and the ladder strip through hole gradually expands from top to bottom air holes; the partition tube is sleeved on the outer side of the boat tube, an inter-tube interlayer is reserved between the partition tube and the boat tube, and a gap is arranged between the top of the boat tube and the bottom of the ventilation disk; the boat pipe is also sleeved with a third pipeline, the gallium boat is communicated with the semiconductor manufacturing inner cavity through the third pipeline, and the boat diverter is arranged in the gallium boat, so that the hydrogen chloride gas introduced into the gallium boat can fully react with gallium liquid to generate gallium chloride gas with sufficient concentration, and the growth speed of crystals is promoted.
Preferably, the lower end of the third pipeline is provided with a stop valve, and the stop valve can prevent volatile matters in the inner cavity of the semiconductor manufacture from entering the gallium boat through the third pipeline; the bottom of the third pipeline is also connected with a semiconductor gas mixing cylinder, the semiconductor gas mixing cylinder is a conical cylinder with a downward opening, the conical cylinder is contracted from top to bottom, the axis of the semiconductor gas mixing cylinder is coincident with the axis of the third pipeline, the upper end of the semiconductor gas mixing cylinder is a circular semiconductor third sealing cover, and the third pipeline is communicated with the inside of the semiconductor gas mixing cylinder through the semiconductor third sealing cover; the second pipeline circumferentially surrounds the third pipeline, the lower end of the second pipeline penetrates through the third semiconductor sealing cover to be communicated with the inside of the semiconductor gas mixing cylinder, a leakage cylinder is further arranged in the semiconductor gas mixing cylinder and is in a circular tube shape and coaxial with the conical cylinder, the opening edge of the upper end of the bottom of the leakage cylinder is connected with the third circular sealing cover, the circular opening edge of the bottom of the leakage cylinder is connected with the bottom edge of the conical cylinder, a separation cavity gradually shrinking from top to bottom is formed between the leakage cylinder and the conical cylinder, the second pipeline penetrates through the third semiconductor sealing cover to be communicated with the separation cavity, a plurality of through holes are formed in the leakage cylinder circumferentially, the separation cavity is communicated with the semiconductor manufacturing inner cavity through the plurality of through holes in the leakage cylinder, and through the communication of the output ports of the third pipeline and the second pipeline into the semiconductor gas mixing cylinder, gallium chloride gas of the third pipeline and ammonia gas of the second pipeline can be efficiently and fully mixed to generate crystal growth mixed gas, the crystal growth mixed gas is improved, the contact uniformity of the crystal growth mixed gas and seeds is improved, and the growth speed of semiconductor crystal seeds is improved.
Preferably, the semiconductor manufacturing lower shell comprises a semiconductor manufacturing lower shell outer barrel, at least two vacuum pumps are further communicated with the semiconductor manufacturing lower shell outer barrel, a semiconductor manufacturing lower shell inner barrel is arranged in the semiconductor manufacturing lower shell outer barrel, an interlayer is arranged in the semiconductor manufacturing lower shell inner barrel, a fourth pipeline is communicated with the upper position of the interlayer, a division bar is further arranged on the interlayer, the division bar divides the interlayer into two parts, the two parts of the interlayer are communicated through a hole reserved at the bottom of the division bar, an interlayer for cooling is arranged in the semiconductor manufacturing lower shell inner barrel and is communicated with the fourth pipeline, cooling liquid is introduced into the interlayer through the fourth pipeline, and ammonium chloride byproducts sucked into the semiconductor manufacturing lower shell by the vacuum pumps are cooled, so that the ammonium chloride is cooled and crystallized and accumulated and collected in the semiconductor manufacturing lower shell.
Preferably, the semiconductor manufacturing lower shell outer cylinder and the semiconductor manufacturing lower shell inner cylinder of the semiconductor manufacturing lower shell are coaxial, the upper openings of the semiconductor manufacturing lower shell outer cylinder and the semiconductor manufacturing lower shell inner cylinder are flush, an interlayer between the upper opening of the semiconductor manufacturing lower shell outer cylinder and the upper opening of the semiconductor manufacturing lower shell inner cylinder is closed by an annular sealing plate, and the annular sealing plate extends towards the circumference of the shaft center after closing the interlayer to form an annular extension part; the upper end of the semiconductor manufacturing lower shell is also provided with a semiconductor generating stand which is circular, the center of the semiconductor generating stand is located at the axis position of the semiconductor manufacturing lower shell outer cylinder, the bottom of the center of the stand is provided with a telescopic rod, the rod head of the telescopic rod is connected with a circular sealing plate, the circular sealing plate can be attached to the annular extension part to seal the semiconductor manufacturing lower shell, the telescopic rod is arranged on the semiconductor manufacturing lower shell, the rod head of the telescopic rod is provided with the circular sealing plate, when the telescopic rod is contracted, the circular sealing plate can be tightly attached to the annular extension part to seal the semiconductor manufacturing shell, and the semiconductor manufacturing shell can be sealed to effectively prevent air, moisture and ammonium chloride byproducts in the semiconductor manufacturing shell from volatilizing upwards and filling the semiconductor manufacturing inner cavity.
Preferably, a method for improving the quality of semiconductor manufacture is implemented by the semiconductor manufacturing system according to the present invention, the method comprising the steps of:
before a semiconductor preparation system prepares a semiconductor, opening a semiconductor manufacturing lower shell through a control telescopic rod to enable the semiconductor manufacturing lower shell to be communicated with a semiconductor manufacturing inner cavity, pumping gas in the semiconductor manufacturing inner cavity through a vacuum pump communicated with the semiconductor manufacturing lower shell to enable the semiconductor manufacturing inner cavity to be in vacuum, pumping water and air in the semiconductor manufacturing inner cavity through the vacuum pump, and removing water and partial volatile impurities in the semiconductor manufacturing inner cavity for the first time;
step two, the semiconductor manufacturing lower shell is sealed by controlling the telescopic rod, nitrogen is filled into the semiconductor manufacturing inner cavity in the step one, nitrogen is filled into the semiconductor manufacturing inner cavity, a heat conducting medium is provided for subsequent heating, and heat of the external heating component can be fully conducted in the semiconductor manufacturing inner cavity through the nitrogen;
a heating component is arranged outside the semiconductor manufacturing shell, the semiconductor manufacturing inner cavity in the second step is heated by the heating component, so that the temperature in the semiconductor manufacturing inner cavity is higher than 340 ℃, the moisture and byproducts in the semiconductor manufacturing inner cavity are vaporized, and the temperature in the semiconductor manufacturing inner cavity can completely evaporate the moisture in the semiconductor manufacturing inner cavity and enable the ammonium chloride crystal to be fully volatilized and fused into the nitrogen in the semiconductor manufacturing inner cavity by raising the temperature in the semiconductor manufacturing inner cavity to be higher than 340 ℃;
opening a semiconductor manufacturing lower shell through a telescopic rod, pumping the semiconductor manufacturing inner cavity in the third step to vacuum through the vacuum pump again, and keeping the vacuum state of the semiconductor manufacturing inner cavity for at least three hours, vaporizing and pumping away byproducts attached to the inner side of the semiconductor manufacturing inner cavity, pumping away nitrogen mixed with moisture and impurities in the third step, further ensuring that the moisture and impurities in the semiconductor manufacturing inner cavity are sufficiently discharged, and ensuring the preparation quality of gallium nitride;
turning off the vacuum pump, charging nitrogen into the inner cavity of the semiconductor manufacture in the step four again, after the inner cavity of the semiconductor manufacture reaches normal pressure, introducing the gas produced by the semiconductor through the first pipeline and the second pipeline to manufacture the semiconductor, simultaneously turning on the other vacuum pump to suck byproducts of the inner cavity of the semiconductor manufacture into the lower shell of the semiconductor manufacture, and introducing a cooling medium into the inner cylinder of the lower shell of the semiconductor manufacture through the fourth pipeline to solidify the byproducts; when the semiconductor manufacturing system is stopped in the semiconductor manufacturing process, the semiconductor manufacturing lower shell is closed; when the semiconductor manufacturing system is started and operated, the semiconductor manufacturing lower shell is opened, and when the semiconductor manufacturing system is operated, the other vacuum pump is started to continuously pump out the reaction gas in the semiconductor manufacturing inner cavity, so that the byproduct compound generated by the reaction gas introduced into the semiconductor manufacturing inner cavity naturally flows downwards, and the byproduct compound is accumulated and collected in the semiconductor manufacturing lower shell through the cooling interlayer effect of the semiconductor manufacturing lower shell inner cavity, thereby avoiding the accumulation of byproduct ammonium chloride in the semiconductor manufacturing inner cavity and influencing the generation quality of gallium nitride.
Further, the second pipeline and the first pipeline are adopted in the second, third and fifth steps, nitrogen is filled into the inner cavity of the semiconductor manufacturing cavity, and the nitrogen is filled into the second pipeline and the first pipeline, so that the gases in the first pipeline and the second pipeline can bring out moisture or ammonium chloride impurities in the pipelines while being filled.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. according to the gallium boat, the boat flow divider is arranged in the gallium boat, hydrogen chloride gas which is fused into the gallium boat through the first pipeline is uniformly divided by the ventilation disc of the boat flow divider and is fully contacted with the surface of gallium liquid, in an actual test, the effect of dividing a hydrogen chloride system into multiple paths of tiny air flows and directly pushing one large air flow to the gallium liquid is far better than that of directly pushing the other large air flow to the gallium liquid, although the contact areas are the same, the large air flow is pushed to the surface of the gallium liquid, a large reverse pushing force is formed on the contact surface of the air flow, a part of the hydrogen chloride gas cannot be contacted with the surface of the gallium liquid by the reverse pushing force, the hydrogen chloride gas is divided into multiple paths of tiny air flows to be contacted with the gallium liquid, the air flow is more mild to contact the gallium liquid, the concentration of gallium chloride generated by contact is higher, and the reaction efficiency is better; meanwhile, a partition pipe is arranged at the lower part of the ventilation disk of the boat flow divider, the partition pipe is provided with a pore space which is gradually enlarged from top to bottom, hydrogen chloride gas is required to be output and is required to pass through the pore space, the pore space is enlarged from top to bottom, so that more airflow passing through the pore space passes through the bottom, and the concentration of gallium chloride is further enlarged;
2. according to the invention, a condensing device is arranged on a first pipeline (when the first pipeline stops introducing hydrogen chloride gas, gallium liquid in a gallium boat is used as a liquid substance, a small part of gallium can volatilize upwards (similar water does not volatilize until the boiling point is reached), the gallium can decompose metal, and corrosiveness is very intense, so that the gallium boat adopts a non-metal material, in order to prevent volatilized gaseous gallium from corroding a vent valve at the front end of the first pipeline), the volatilized gallium flows back through a cone of the condensing device, a condensing cone is arranged on the condensing reflux device, and the upwards volatilized substance can contact the cone to condense and reflux, so that the pipeline and the vent valve at the front end of the pipeline are prevented from being damaged continuously upwards;
3. according to the invention, the second pipeline and the third pipeline are connected into the semiconductor gas mixing cylinder, and ammonia is introduced into the separation cavity formed by the conical cylinder and the leakage cylinder of the semiconductor gas mixing cylinder, the third pipeline flows from top to bottom at the axial position of the semiconductor gas mixing cylinder, and the ammonia gas flow entering the separation cavity is extruded and radially penetrates into the gallium chloride gas of the third pipeline through a plurality of round holes formed in the leakage cylinder, so that the ammonia gas and the gallium chloride are fully mixed in high concentration (the semiconductor gas mixing cylinder is small in volume and high in concentration after efficient mixing) to form crystal growth mixed gas, and the crystal growth mixed gas flows to crystal seeds arranged below, so that the growth speed of the crystal seeds is greatly improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the invention. In the drawings:
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a longitudinal cross-sectional view;
FIG. 3 is a schematic diagram of a detail at A in FIG. 2;
FIG. 4 is a schematic diagram of a detail at B in FIG. 2;
FIG. 5 is a schematic diagram of detail C in FIG. 2;
FIG. 6 is an overall schematic diagram of a tube and gallium boat assembly;
FIG. 7 is a schematic view of a pipeline and gallium boat assembly disassembled;
FIG. 8 is a schematic view of gallium boat disassembly and dicing;
FIG. 9 is a schematic view of a boat-inside-boat flow divider structure;
FIG. 10 is a schematic view of a first conduit and condensing assembly cut;
FIG. 11 is a schematic view of the cut-in valve;
FIG. 12 is a schematic view of radial cutting of a semiconductor fabrication lower shell;
FIG. 13 is a schematic view of detail D in FIG. 12;
FIG. 14 is a schematic view of an axial cut of a semiconductor fabrication lower shell;
FIG. 15 is a schematic view of detail E in FIG. 14;
fig. 16 is a cross-sectional view of a semiconductor fabrication lower case.
The reference numerals are represented as follows: 1-semiconductor manufacturing housing, 2-semiconductor manufacturing inner cavity, 201-first pipe, 202-cooling cone, 203-cooling fin, 204-second pipe, 205-boat pipe, 206-crystal growth stage, 207-boat body, 208-boat diverter, 209-boat cover, 2011-third pipe, 2012-leak cartridge, 2013-cone cartridge, 2014-cap plug, 2015-loop-back cavity, 2016-condensing unit, 2017-stop valve, 2018-semiconductor mixing cartridge, 2019-gallium boat, 2020-spacer, 2021-gas permeable disk, 3-semiconductor manufacturing lower housing, 301-vacuum pump communication pipe, 302-fourth pipe, 303-telescoping rod, 304-telescoping rod protective housing, 305-semiconductor manufacturing lower housing inner cylinder, 306-aperture, 307-parting bead, 308-semiconductor manufacturing lower housing, 309-round seal plate, 3011-semiconductor manufacturing outer cylinder stage.
Detailed Description
For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.
Examples:
as shown in fig. 1 to 16, the present embodiment includes a semiconductor manufacturing housing 1, a semiconductor manufacturing inner cavity 2 and a semiconductor manufacturing lower shell 3, wherein the semiconductor manufacturing housing 1 is a cylindrical shell, the semiconductor manufacturing inner cavity 2 is disposed inside the semiconductor manufacturing housing 1, the semiconductor manufacturing inner cavity is also a cylindrical shell, the semiconductor manufacturing inner cavity 2 and the semiconductor manufacturing housing 1 are coaxial, the upper end of the semiconductor manufacturing housing 1 is closed by a first sealing cover, the first sealing cover adopts a flange, a flange shaft center is provided with a through hole connected with the first pipeline 201, the first pipeline 201 is a hydrogen chloride feeding pipeline, a plurality of communication ports of second pipelines 204 are further disposed outside the circumference of the communication port of the first pipeline 201, the second pipeline 204 is an ammonia feeding pipeline, the first pipeline 201 enters the inside of the semiconductor manufacturing housing 1 after passing through the communication port of the flange, and is communicated with the second sealing cover disposed at the upper end of the semiconductor manufacturing inner cavity 2, and similarly, the second pipeline 204 is also communicated with the semiconductor manufacturing inner cavity 2 through the second sealing cover after passing through the flange.
The first pipeline 201 is further provided with a condensing assembly 2016, the condensing assembly 2016 comprises a cooling cone 202 and cooling fins 203, the axis of the cooling cone 202 is coaxial with the first pipeline 201, meanwhile, the cone head of the cooling cone 202 faces downwards vertically, the cooling cone 202 is arranged inside the first pipeline 201, the cooling fins 203 are further arranged on the circumferential shell of the cooling cone 202 in an array mode, the cooling fins 203 extend to the periphery of the periphery to be connected with the first pipeline 201 and then extend to penetrate out of the first pipeline 201 again to form a cooling part, the cooling fins 203 cool the cooling cone 202 through the first cooling part, the cooling fins 203 of the condensing assembly 2016 are matched with the condensing effect of metal cones of the cooling fins 203, when the first pipeline 201 is stopped to be ventilated, gallium volatilized to the first pipeline 201 in the gallium boat 2019 condenses and flows back, and gallium volatilized to the first pipeline 201 is prevented from corroding and decomposing a ventilation valve arranged at the front end of the first pipeline 201.
The first pipeline 201 is communicated with a second sealing cover of the semiconductor manufacturing inner cavity 2, then is communicated with a gallium boat 2019 arranged below the second sealing cover, and after the second pipeline 204 surrounding the first pipeline 201 is communicated with the second sealing cover, the gallium boat 2019 continues to extend downwards from the periphery; gallium boat 2019 is cylindrical, gallium boat 2019 comprises a boat cover 209 and a boat body 207, boat body 207 is arranged below boat cover 209, the axes of boat cover 209 and boat body 207 are provided with round communicating ports, first pipeline 201 is communicated with gallium boat 2019 through the communicating ports of boat cover 209, boat pipe 205 is also arranged at the inner side of the communicating ports of boat body 207, boat pipe 205 prevents gallium liquid from overflowing from the axes communicating ports of shaft body, boat diverter 208 is also arranged between boat cover 209 and boat body 207, boat diverter 208 is correspondingly provided with a ventilation disk 2021 and a partition 2020, the circumferential array of ventilation disk 2021 is provided with strip-shaped holes, the directions of the strip-shaped holes are the same as the diameter direction of the ventilation holes, hydrogen chloride gas introduced into gallium boat 2019 by first pipeline 201 is fully split by the strip-shaped ventilation holes of the array through ventilation disk 2021, enters the lower part of ventilation disk 2021 to be contacted with gallium liquid, the center of lower side of ventilation disk 2021 is also vertically fixed with partition 2020, the circumferential array of the tube 2020 is provided with trapezoid holes which are gradually enlarged from the upper part to the lower part, the tube 2020 is sleeved on the outer side of the boat 205, a ventilation interlayer is reserved between the tube 2020 and the boat 205, a gap is reserved between the boat 205 and the upper end of the tube 2020, gas fully contacted with gallium liquid through the ventilation disk 2021 passes through the tube 2020 and enters the upper side through hole of the boat 205, in the process, hydrogen chloride gas passes through the bigger holes 306 from the lower part due to trapezoid holes of the tube 2020, the contact time with gallium liquid is further increased, the boat diverter 208 can divert the hydrogen chloride gas conveyed by the first pipeline 201 to be contacted with the gallium liquid, the required substance, namely the concentration of gallium chloride is increased, and it is worth mentioning that the conventional gallium boat 2019 is not correspondingly forced to be contacted with the design, but the hydrogen chloride gas is directly introduced into the gallium boat 2019 and then is output through the boat 205, in practice, most of the hydrogen chloride is not in contact with the gallium liquid and is directly output, the generation concentration of the gallium chloride is not ideal, but the concentration of the gallium chloride directly influences the growth period of the gallium chloride as a gallium chloride production device of a vapor phase epitaxy growth mechanism.
The boat pipe 205 of the boat body 207 of the gallium boat 2019 is sleeved with a third pipeline 2011, the gallium boat 2019 is communicated with the semiconductor manufacturing inner cavity 2 through the third pipeline 2011, the third pipeline 2011 is coaxial with the semiconductor manufacturing inner cavity 2, the second pipeline 204 is circumferentially surrounded by the third pipeline 2011, the lower ports of the third pipeline 2011 and the second pipeline 204 are both connected to the semiconductor gas mixing cylinder 2018, the semiconductor gas mixing cylinder 2018 comprises a conical cylinder 2013 and a leakage cylinder 2012, the conical cylinder 2013 and the third pipeline 2011 are coaxial, the conical cylinder 2013 gradually contracts from top to bottom, the upper end of the conical cylinder 2013 is closed through a third sealing cover, the third pipeline 2011 and the second pipeline 204 are communicated with the conical cylinder 2013 through the third sealing cover, the lower end of the conical cylinder 2013 is an opening and communicated with the semiconductor manufacturing inner cavity 2, the conical cylinder 2013 is internally provided with a leakage cylinder 2012 with the same axis, the upper end of the leakage cylinder 2012 is connected with the third sealing cover, the lower end of the leakage cylinder 2012 is connected with the opening edge of the lower end of the conical port, the leakage tube 2012 is provided with a plurality of dense round holes, a gap between the leakage tube 2012 and the cone 2013 forms a separation cavity, the second pipeline 204 is communicated with the cone 2013 to convey ammonia gas into the separation cavity, and the ammonia gas entering the separation cavity flows from the axis of the cone 2013 from top to bottom through the third pipeline 2011, so that the ammonia gas entering the separation cavity is extruded, and flows out of the round holes of the leakage tube 2012 from the direction of the ammonia gas converging jet formed in the cone 2013 towards the axis in radial direction, the ammonia converging jet circumferentially surrounds the axis gas flow penetrating into the gallium chloride gas, the ammonia gas and the gallium chloride gas are fully mixed to a high degree to form gallium nitride crystal growth mixed gas, and when the rear gallium nitride crystal growth mixed gas flows to crystal seeds above the crystal growth table 206 arranged below the semiconductor mixed gas cylinder 2018, the gallium nitride grows on the epitaxial layer of the crystal seeds, in the process, the gallium chloride gas flows to and contacts with the crystal seeds, the flow force formed by the gallium chloride gas and the diffusion airflow impulsive force formed by the gallium chloride gas after the gallium chloride gas impacts the crystal growth platform 206 can prevent the ammonia gas from further mixing with the gallium chloride gas, in other words, the gallium chloride gas flows downwards in a circular jet and contacts with the seeds, in the process, if the ammonia gas does not contact with the gallium chloride gas in a powerful jet, the gas at the axis part of the gallium chloride is shielded by the gas outside the gallium chloride, so that the gallium chloride at the axis part of the gallium chloride airflow is not contacted with the ammonia gas but directly acts on the crystal seeds, thereby delaying the growth speed of the crystal seeds;
further, the third pipeline is further provided with a check valve 2017, the check valve 2017 is provided with a return cavity 2015 and a cap plug 2014, when the third pipeline is filled with gas from top to bottom, the gas pushes away the cap plug 2014 through the return cavity 2015 and is discharged from the lower part, when the third pipeline is not filled with gas, the cap plug falls back to close an inlet and an outlet below under the action of gravity, and the check valve 2017 is designed to prevent moisture, ammonium chloride and oxides in air from volatilizing into the gallium boat 2019 and reacting with gallium in the gallium boat 2019 to generate impurities when the equipment is stopped.
The gallium boat 2019 position of the semiconductor manufacturing inner chamber 2 and the seed position on the crystal growth stage 206 are respectively provided with heating components outside the semiconductor manufacturing enclosure 1, and the heating components are not described in detail in the embodiment, and provide suitable temperatures for the generation of gallium chloride compounds in the gallium boat 2019 and the growth environment of the crystal growth stage 206, and suitable temperature environments when the equipment cleans moisture and impurities, respectively, with respect to the upper and lower heating components outside the semiconductor manufacturing enclosure 1.
The semiconductor manufacturing inner cavity 2 is further communicated with the semiconductor manufacturing lower shell 3, the semiconductor manufacturing lower shell 3 comprises a semiconductor manufacturing lower shell inner cylinder 305 and a semiconductor manufacturing lower shell outer cylinder 308, the semiconductor manufacturing lower shell inner cylinder 305 and the semiconductor manufacturing lower shell outer cylinder 308 are coaxial, the upper edge of the semiconductor manufacturing lower shell inner cylinder 305 is flush with the upper edge of the semiconductor manufacturing lower shell outer cylinder 308, openings of the semiconductor manufacturing lower shell inner cylinder 305 and the semiconductor manufacturing lower shell outer cylinder 308 are sealed through an annular sealing plate, the annular sealing plate is sealed, the opening is sandwiched and then continues to axially extend to form an annular extension part, the semiconductor manufacturing lower shell 3 is communicated with the semiconductor manufacturing inner cavity 2 through a cavity hole in the middle of the annular extension part, a semiconductor generating stand 3011 is further arranged above the annular extension part, a crystal growing stand 206 is arranged on the semiconductor generating stand 3011, a telescopic rod 303 is further arranged at the middle position of the lower side of the semiconductor generating stand 3011, a round sealing plate 309 is further arranged at the bottom end of the telescopic rod 303, and when the telescopic rod 303 is contracted, the round sealing plate 309 is tightly adhered to the annular extension part, so that the semiconductor manufacturing lower shell is sealed, otherwise, the semiconductor manufacturing outer shell 1 is opened, and the semiconductor manufacturing outer shell 1 is communicated with the semiconductor manufacturing inner cavity 2;
further, the inner cylinder 305 of the lower shell of the semiconductor manufacturing is provided with an interlayer for cooling, the upper end of the cooled interlayer is communicated with a fourth pipeline 302, the fourth pipeline 302 is filled with cooling liquid, the interlayer is radially provided with a division bar 307, the division bar 307 divides the interlayer into two parts of interlayers, the lower end of the division bar 307 is provided with a hole 306, the cooling liquid can be communicated with the lower end, the fourth pipeline 302 is filled with the cooling liquid from the upper end of one side, the cooling liquid fills the interlayer of the side, then enters the other interlayer from the hole 306 of the lower side, and is input from the fourth pipeline 302 at the upper end of the other interlayer, heat is taken away, and then crystal growth byproducts ammonium chloride entering the lower shell 3 of the semiconductor manufacturing is cooled, so that the ammonium chloride is crystallized;
further, the lower end of the inner semiconductor manufacturing lower shell cylinder 305 is higher than the lower edge of the outer semiconductor manufacturing lower shell cylinder 308, at least two vacuum pumps are connected to the upper end of the interlayer between the inner semiconductor manufacturing lower shell cylinder and the outer semiconductor manufacturing lower shell cylinder, and the vacuum pumps pump the gas of the lower semiconductor manufacturing shell 3, so that the gas phase of the inner semiconductor manufacturing cavity 2 can flow from top to bottom; the upper side of the outer cylinder 308 of the semiconductor manufacturing lower shell is also provided with two vacuum pump communication pipelines 301, the two vacuum pump communication pipelines 301 are respectively connected with two vacuum pumps, the vacuum pumps pump the gas of the lower shell 3 of the semiconductor manufacturing through the vacuum pump communication pipelines 301, meanwhile, the outer side of the telescopic rod 303 is also provided with a telescopic rod protecting shell 304, the telescopic rod protecting shell 304 surrounds the outer sleeve of the telescopic rod 303, and corrosive gas in the embodiment is prevented from corroding the outer sleeve of the telescopic rod 303.
Further, the semiconductor manufacturing system of the present embodiment is correspondingly matched with a method for improving the manufacturing quality of a semiconductor, and the steps of the method include a preferred method for improving the manufacturing quality of a semiconductor, which is implemented by using the semiconductor manufacturing system of the present invention, and the method includes the following steps:
step one, before a semiconductor preparation system prepares a semiconductor, opening a semiconductor manufacturing lower shell 3 by controlling a telescopic rod 303 to enable the semiconductor manufacturing lower shell 3 to be communicated with a semiconductor manufacturing inner cavity 2, pumping gas in the semiconductor manufacturing inner cavity 2 through a vacuum pump communicated with the semiconductor manufacturing lower shell 3 to enable the semiconductor manufacturing inner cavity 2 to be in vacuum, and removing moisture and ammonium chloride impurities in semiconductor manufacturing equipment in a first step by evacuating the gas; step two, the semiconductor manufacturing lower shell 3 is sealed by controlling the telescopic rod 303, and nitrogen is filled into the semiconductor manufacturing inner cavity 2 in the step one; a heating component is arranged outside the semiconductor manufacturing shell 1, the semiconductor manufacturing inner cavity 2 in the second step is heated by the heating component, so that the temperature in the semiconductor manufacturing inner cavity 2 is higher than 340 ℃, and the moisture and byproducts in the semiconductor manufacturing inner cavity 2 are vaporized; opening the semiconductor manufacturing lower shell 3 through the telescopic rod 303, pumping the semiconductor manufacturing inner cavity 2 in the third step to vacuum again through the vacuum pump, and keeping the semiconductor manufacturing inner cavity 2 in a vacuum state for at least three hours, so that byproducts attached to the inner side of the semiconductor manufacturing inner cavity 2 are vaporized and pumped away; turning off the vacuum pump, re-filling nitrogen into the semiconductor manufacturing cavity 2 in the step four, after the semiconductor manufacturing cavity 2 reaches normal pressure, introducing semiconductor manufacturing gas through the first pipeline 201 and the second pipeline 204 to manufacture the semiconductor, simultaneously turning on the other vacuum pump to suck byproducts of the semiconductor manufacturing cavity 2 into the semiconductor manufacturing lower shell 3, and introducing cooling medium into the semiconductor manufacturing lower shell inner cylinder 305 through the fourth pipeline 302 to solidify the byproducts; when the semiconductor manufacturing system is stopped in the semiconductor manufacturing process, the semiconductor manufacturing lower shell 3 is closed; at the start-up and operation of the semiconductor manufacturing system, the semiconductor manufacturing lower case 3 is opened. Through carrying out the steps, moisture, ammonium chloride impurities and oxides in the semiconductor manufacturing inner cavity 2 can be fully removed, the gallium nitride crystal which is formed by oxidizing and growing oxygen elements (oxygen elements are easy to become oxygen ions at high temperature) in oxygen and water molecules is effectively prevented, the gallium nitride crystal is prevented from being oxidized and blackening, meanwhile, when a semiconductor manufacturing system is stopped, the semiconductor manufacturing lower shell 3 is closed, the ammonium chloride crystal in the semiconductor manufacturing lower shell 3 can be effectively closed to volatilize upwards, and before equipment is started, the ammonium chloride in the semiconductor manufacturing inner cavity 2 is removed, the accumulation of the ammonium chloride impurities on the crystal growth table 206 is effectively prevented, the growth environment of gallium nitride is effectively cleaned, and the quality of gallium nitride is ensured.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (7)
1. A semiconductor manufacturing system comprising a semiconductor manufacturing shell (1), a semiconductor manufacturing inner cavity (2) and a semiconductor manufacturing lower shell (3), wherein the semiconductor manufacturing shell (1) and the semiconductor manufacturing inner cavity are cylindrical shells, the semiconductor manufacturing inner cavity (2) is arranged inside the semiconductor manufacturing shell (1) and is coaxial with the semiconductor manufacturing shell (1), the semiconductor manufacturing lower shell (3) is arranged at the bottom of the semiconductor manufacturing shell (1) and is communicated with the semiconductor manufacturing inner cavity (2), and the semiconductor manufacturing lower shell is used for collecting byproducts generated during manufacturing semiconductors;
the top of the semiconductor manufacturing shell (1) is provided with a circular semiconductor first sealing cover, the semiconductor first sealing cover is provided with a pipeline communication port, the axle center of the semiconductor first sealing cover is provided with a first communication port of a first pipeline (201), and the first communication port is provided with a second communication port with a plurality of second pipelines (204) circumferentially surrounding; the first pipeline (201) and the second pipeline (204) penetrate through the first communication port and the second communication port of the corresponding sealing cover to enter the semiconductor manufacturing shell (1) and are communicated with the semiconductor manufacturing inner cavity (2); the utility model discloses a semiconductor manufacturing device, including first pipeline (201), condenser subassembly (2016) are provided with cooling cone (202) inside, the axle center of cooling cone (202) and first pipeline (201) coaxial, and its toper head is towards semiconductor manufacturing inner chamber (2), the circumference outside of cooling cone (202) still is fixed with multiunit fin (203), after fin (203) connect outside pipeline and continue to extend outside the pipeline, fin (203) can take out outside first pipeline (201) the heat of cooling cone (202).
2. A semiconductor manufacturing system according to claim 1, wherein a circular semiconductor second cover is arranged on the top of the semiconductor manufacturing cavity (2), the axis of the semiconductor second cover and the outer side of the circumference of the axis are correspondingly communicated with penetrating holes of the first pipeline (201) and the second pipeline (204), and the first pipeline (201) penetrates through the semiconductor second cover to enter the semiconductor manufacturing cavity (2) and is communicated with a gallium boat (2019) fixed on the lower side of the semiconductor second cover; a second tube (204) circumferentially surrounding the gallium boat (2019) of the semiconductor fabrication chamber (2); the gallium boat (2019) is cylindrical, the axis is the same as the axis of the first pipeline (201), the gallium boat (2019) comprises a boat cover (209) and a boat body (207) arranged below the boat cover (209), a boat diverter (208) is further arranged in the boat cover (209) and the boat body (207), the boat body (207) is cylindrical, the boat body (207) is circularly sunken along the axis direction to form a boat pool, an output hole is formed in the middle of the boat body (207), the output hole is further fixedly provided with a boat pipe (205) inside the boat body (207), and the boat pipe (205) can prevent gallium liquid in the boat pool from flowing out; the boat diverter (208) comprises a ventilation disk (2021), the ventilation disk (2021) is provided with a strip-shaped through hole with a circumferential array, the axis of the circumferential array of the strip-shaped through hole coincides with the axis of the gallium boat (2019), the direction of the strip-shaped through hole coincides with the circular diameter of the ventilation disk (2021), the edge of the ventilation disk (2021) is tightly attached to the circumferential edge of the inner side of the boat body (207), the ventilation disk (2021) can uniformly disperse the air flow which is introduced into the gallium boat (2019) by the first pipeline (201) into a boat pool of the boat body (207), a partition tube (2020) is vertically fixed at the center of the lower part of the ventilation disk (2021), a ladder-shaped through hole facing along the partition tube (2020) is also circumferentially arranged on the wall of the partition tube, the axis of the circumferential array of the ladder-shaped through hole coincides with the axis of the partition tube (2020), and the ladder-shaped through hole is gradually enlarged from top to bottom; the partition tube (2020) is sleeved on the outer side of the boat tube (205), an inter-tube interlayer is reserved between the partition tube (2020) and the boat tube (205), and a gap is arranged between the top of the boat tube (205) and the bottom of the ventilation disc (2021); the boat pipe (205) is also sleeved with a third pipeline (2011), and the gallium boat (2019) is communicated with the semiconductor manufacturing inner cavity (2) through the third pipeline (2011).
3. A semiconductor manufacturing system according to claim 2, characterized in that the lower end of the third pipe (2011) is provided with a stop valve (2017), the stop valve (2017) being capable of preventing volatile substances in the semiconductor manufacturing cavity (2) from entering the gallium boat (2019) through the third pipe (2011); the bottom of the third pipeline (2011) is also connected with a semiconductor gas mixing cylinder (2018), the semiconductor gas mixing cylinder (2018) is a conical cylinder (2013) with a downward opening, the conical cylinder is contracted from top to bottom, the axle center of the semiconductor gas mixing cylinder (2018) is overlapped with the axle center of the third pipeline (2011), the upper end of the semiconductor gas mixing cylinder (2018) is a circular semiconductor third sealing cover, and the third pipeline (2011) passes through the semiconductor third sealing cover to be communicated with the inside of the semiconductor gas mixing cylinder (2018); the second pipeline (204) circumferentially surrounds the third pipeline (2011), the lower end of the second pipeline penetrates through the third semiconductor sealing cover to be communicated with the inside of the semiconductor gas mixing cylinder (2018), a leakage cylinder (2012) is further arranged in the semiconductor gas mixing cylinder (2018), the leakage cylinder (2012) is in a circular tube shape and coaxial with the conical cylinder (2013), the opening edge of the upper end of the bottom of the leakage cylinder (2012) is connected with the third circular sealing cover, the circular opening edge of the bottom of the leakage cylinder is connected with the bottom edge of the conical cylinder (2013), a cavity gradually shrinking from top to bottom is formed between the leakage cylinder (2012) and the conical cylinder (2013), the second pipeline (204) penetrates through the third semiconductor sealing cover to be communicated, a plurality of through holes are formed in the circumference of the leakage cylinder (2012), and the cavity is communicated with the semiconductor manufacturing cavity (2) through the through holes in the leakage cylinder.
4. A semiconductor manufacturing system according to claim 1, characterized in that the semiconductor manufacturing lower shell (3) comprises a semiconductor manufacturing lower shell outer cylinder (308), the semiconductor manufacturing lower shell outer cylinder (308) is also communicated with at least two vacuum pumps, the semiconductor manufacturing lower shell inner cylinder (305) is arranged in the semiconductor manufacturing lower shell outer cylinder (308), the semiconductor manufacturing lower shell inner cylinder (305) is provided with an interlayer, a fourth pipeline (302) is communicated with the upper part of the interlayer, a division bar (307) is also arranged in the interlayer, the division bar (307) divides the interlayer into two parts, and the two parts of the interlayer are communicated through a hole (306) reserved at the bottom of the division bar (307).
5. A semiconductor manufacturing system according to claim 4, wherein the semiconductor manufacturing lower shell outer cylinder (308) and the semiconductor manufacturing lower shell inner cylinder (305) of the semiconductor manufacturing lower shell (3) are coaxial and upper openings of the two are flush, an interlayer between the upper opening of the semiconductor manufacturing lower shell outer cylinder (308) and the upper opening of the semiconductor manufacturing lower shell inner cylinder (305) is closed by an annular sealing plate, and the annular sealing plate extends circumferentially towards the axis after closing the interlayer to form an annular extension; the upper end of the semiconductor manufacturing lower shell (3) is also provided with a semiconductor generating stand (3011) which is circular, the center of the semiconductor generating stand is positioned at the axis position of the outer cylinder (308) of the semiconductor manufacturing lower shell, the bottom of the center of the stand is provided with a telescopic rod (303), the rod head of the telescopic rod (303) is connected with a circular sealing plate (309), and the circular sealing plate (309) can be attached to the annular extension part to seal the semiconductor manufacturing lower shell (3).
6. A method of improving semiconductor manufacturing quality, implemented using a semiconductor manufacturing system according to any one of claims 1-5, comprising the steps of:
before a semiconductor preparation system prepares a semiconductor, a lower semiconductor manufacturing shell (3) is opened through a control telescopic rod (303), the lower semiconductor manufacturing shell (3) is communicated with an inner semiconductor manufacturing cavity (2), and a vacuum pump communicated with the lower semiconductor manufacturing shell (3) is used for pumping gas in the inner semiconductor manufacturing cavity (2) to enable the inner semiconductor manufacturing cavity (2) to be in vacuum;
step two, a semiconductor manufacturing lower shell (3) is sealed by controlling a telescopic rod (303), and nitrogen is filled into the semiconductor manufacturing inner cavity (2) in the step one;
a heating component is arranged outside the semiconductor manufacturing shell (1), and the semiconductor manufacturing inner cavity (2) in the second step is heated by the heating component, so that the temperature in the semiconductor manufacturing inner cavity (2) is higher than 340 ℃, and the moisture and byproducts in the semiconductor manufacturing inner cavity (2) are vaporized;
opening the semiconductor manufacturing lower shell (3) through the telescopic rod (303), pumping the semiconductor manufacturing inner cavity (2) in the third step to vacuum again through the vacuum pump, and keeping the semiconductor manufacturing inner cavity (2) in a vacuum state for at least three hours, so that byproducts attached to the inner side of the semiconductor manufacturing inner cavity (2) are vaporized and pumped away;
turning off the vacuum pump, re-filling nitrogen into the semiconductor manufacturing inner cavity (2) in the step four, introducing semiconductor manufacturing gas through the first pipeline (201) and the second pipeline (204) after the semiconductor manufacturing inner cavity (2) reaches normal pressure for semiconductor manufacturing, simultaneously turning on the other vacuum pump to suck byproducts of the semiconductor manufacturing inner cavity (2) into the semiconductor manufacturing lower shell (3), and introducing cooling medium into the semiconductor manufacturing lower shell inner cylinder (305) through the fourth pipeline (302) to solidify the byproducts; when the semiconductor manufacturing system is stopped in the semiconductor manufacturing process, the semiconductor manufacturing lower shell (3) is closed; the semiconductor manufacturing lower case (3) is opened when the semiconductor manufacturing system is started and operated.
7. A method for improving the quality of semiconductor manufacturing according to claim 6, wherein the second, third and fifth steps are performed by filling the semiconductor manufacturing chamber (2) with nitrogen gas through the second pipe (204) and the first pipe (201).
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| EP3760766B1 (en) * | 2019-07-03 | 2022-03-09 | SiCrystal GmbH | System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same |
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| CN1799150A (en) * | 2003-10-24 | 2006-07-05 | 通用电气公司 | Group iii-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
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