CN116400522B - Thin film lithium niobate modulator with layered climbing electrodes and preparation method thereof - Google Patents
Thin film lithium niobate modulator with layered climbing electrodes and preparation method thereof Download PDFInfo
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- CN116400522B CN116400522B CN202310678899.1A CN202310678899A CN116400522B CN 116400522 B CN116400522 B CN 116400522B CN 202310678899 A CN202310678899 A CN 202310678899A CN 116400522 B CN116400522 B CN 116400522B
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 230000009194 climbing Effects 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 56
- 238000002955 isolation Methods 0.000 claims abstract description 54
- 230000005684 electric field Effects 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 7
- 230000009471 action Effects 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000003190 augmentative effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a thin film lithium niobate modulator with layered climbing electrodes and a preparation method thereof, belonging to the technical field of optoelectronic integrated devices; the Mach-Zehnder structure is prepared on the lithium niobate thin film layer, and the Mach-Zehnder structure comprises: the input end is used for injecting input light and dividing the input light into two paths of light; the two optical waveguides are formed on the surface of the lithium niobate thin film layer and are used for respectively transmitting the two paths of light and carrying out electro-optic modulation under the action of an external electric field; the output end is used for combining and outputting the two paths of modulated light; the electrode layer comprises a plurality of strip-shaped electrodes arranged beside each optical waveguide, so that the strip-shaped electrodes form an electric field to modulate light in the two optical waveguides after being electrified, and an overlapping area exists between the strip-shaped electrodes and the optical waveguides; and the multi-layer dielectric isolation layer is arranged in the overlapping area of the strip electrode and the optical waveguide and is clamped between the optical waveguide and the strip electrode to generate an isolation effect.
Description
Technical Field
The invention relates to the technical field of optoelectronic integrated devices, in particular to a thin film lithium niobate modulator with layered climbing electrodes and a preparation method thereof.
Background
With the rise and popularization of technologies such as 5G and multimedia, applications such as internet of things, high-definition video services, virtual Reality (VR), and augmented Reality (Augmented Reality, AR) are gradually moving into our lives, and information capacity and data communication services are continuously and explosively increasing. High-performance electro-optical modulators, which serve as core elements in communication links, play an extremely important role in digital and analog microwave photon links, and have been a research hotspot at home and abroad.
Lithium niobate is widely used as a material for electro-optical modulators due to its excellent electro-optical, non-linearity and large transparent window from visible to mid-infrared. In recent years, a lithium niobate-on-insulator (LNOI) platform has become a promising platform for integrating high performance electro-optic modulators, and in methods based on the LNOI platform, a low refractive index substrate (e.g., siO 2 ) Is adhered with a single layerThe lithium niobate thin film with the thickness of crystal and submicron is formed into a waveguide by dry etching the lithium niobate device layer, so that a series of thin film lithium niobate photon devices have high refractive index contrast and tight optical mode limitation. At present, the integrated electro-optical modulator based on LNOI has been researched by many researchers because of the characteristics of small volume and high performance.
However, the existing electro-optic modulator adopts a coplanar electrode structure, namely, the lower edge of the electrode and the lower edge of the optical waveguide are on the same plane. Through the interaction of the external electric field and the optical field, the electric signal is converted into the optical signal, but the electrode can not turn, which is unfavorable for the back end packaging test, and a test method of a pressure probe is generally directly adopted. In addition, some technologies deposit a layer of silicon dioxide on the surface of the thin film lithium niobate, and then form a gold electrode on the silicon dioxide through a deposition and stripping process, so that the electrode can be bent to facilitate packaging, but because a layer of silicon dioxide is arranged between the electrode and the waveguide in the electro-optical interaction area, the interaction strength of an external electric field and an optical field in the waveguide is limited, a higher driving voltage is required, the power consumption of the electro-optical modulator is increased, and the electro-optical modulator cannot be compatible with CMOS (Complementary Metal Oxide Semiconductor ), and the integration of an optoelectronic device is limited.
Disclosure of Invention
Based on the above problems, the invention provides a thin film lithium niobate modulator with layered climbing electrodes and a preparation method thereof, so as to alleviate the technical problems in the prior art.
Technical scheme (one)
In one aspect of the present invention, there is provided a thin film lithium niobate modulator having layered climbing electrodes, comprising: a substrate layer; a silicon dioxide layer prepared on the substrate; the lithium niobate thin film layer is prepared on the silicon dioxide layer, and a Mach-Zehnder structure is prepared on the lithium niobate thin film layer and comprises: the input end is used for injecting input light and dividing the input light into two paths of light; the two optical waveguides are formed on the surface of the lithium niobate thin film layer, and are used for respectively transmitting the two paths of light and carrying out electro-optic modulation under the action of an external electric field; the output end is used for combining and outputting the two paths of modulated light; the electrode layer comprises a plurality of strip-shaped electrodes arranged beside each optical waveguide, so that the strip-shaped electrodes form an electric field to modulate light in the two optical waveguides after being electrified, and an overlapping area exists between the strip-shaped electrodes and the optical waveguides; and a multi-layer dielectric isolation layer arranged in the overlapping area of the strip electrode and the optical waveguide and clamped between the optical waveguide and the strip electrode to generate isolation effect between the strip electrode and the optical waveguide.
According to the embodiment of the invention, the multi-layer dielectric isolation layers are stacked up and down, and the area of the dielectric isolation layer above is smaller than that of the dielectric isolation layer below the dielectric isolation layer.
According to the embodiment of the invention, when the strip electrode passes through the overlapping area, the strip electrode has a layered step-by-step climbing and lifting structure due to the arrangement of the multi-layer medium isolation layers.
According to the embodiment of the invention, the strip-shaped electrode has a turning structure when passing through the overlapped area.
According to an embodiment of the present invention, the material for preparing the multi-layer dielectric barrier layer is selected from silicon dioxide or silicon nitride.
According to an embodiment of the present invention, the multi-layer dielectric barrier includes two dielectric barriers.
According to an embodiment of the present invention, the multi-layered dielectric barrier layer includes three or more dielectric barrier layers.
According to the embodiment of the invention, the input end comprises a beam splitting structure, the beam splitting ratio of the beam splitting structure is 1:1, and the beam splitting structure is a Y-branch, a directional coupler or a multimode interferometer.
According to an embodiment of the invention, the output end comprises a beam combining structure, which is a Y-branch, a directional coupler or a multimode interferometer.
In another aspect of the present invention, a method for preparing the thin film lithium niobate modulator for layered climbing of the electrode is provided, including: preparing a silicon dioxide layer and a lithium niobate thin film layer on the substrate layer; preparing a Mach-Zehnder structure on the lithium niobate thin film layer; planning a strip electrode path, and preparing a multi-layer dielectric isolation layer on the lithium niobate thin film in the strip electrode path and at the overlapping area of the optical waveguide; and preparing strip-shaped electrodes beside each optical waveguide and at the overlapped area to finish the preparation of the thin film lithium niobate modulator with layered climbing of the electrodes.
(II) advantageous effects
According to the technical scheme, the thin film lithium niobate modulator with the electrode layered climbing and the preparation method thereof have at least one or a part of the following beneficial effects:
(1) The physical separation of the overlapped area of the strip electrode and the optical waveguide is realized, the high electro-optical effect is provided for the non-overlapped area, and meanwhile, the metal absorption of the overlapped area is avoided, so that the high-efficiency electro-optical conversion is realized;
(2) The etching difficulty of each dielectric isolation layer and the thickness non-uniformity of the metal climbing platform are reduced;
(3) The isolation method of the overlapping area of the metal electrode and the optical waveguide is expanded, the metal resistor and the metal electrode can be integrated on the chip, and the chip electro-optic package and the on-chip large-scale integration which are more optimized are facilitated.
Drawings
Fig. 1 is a schematic diagram of a top view angle of a thin film lithium niobate modulator with electrode layered climbing according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a cross-sectional view of a thin film lithium niobate modulator with layered climbing of electrodes according to an embodiment of the present invention.
Fig. 3 is a flowchart of a method for preparing a thin film lithium niobate modulator with layered climbing electrodes according to an embodiment of the present invention.
Detailed Description
The invention provides a thin film lithium niobate modulator with layered climbing electrodes and a preparation method thereof.
The mach-zehnder modulator is the most widely used type of electro-optical modulator at present, and the passive optical waveguide part of the mach-zehnder structure comprises an input waveguide and an output waveguide, two waveguide arms, a beam splitting structure and a beam combining structure, wherein the beam splitting structure and the beam combining structure can be a Y-branch, a directional coupler or a multimode interferometer. The working principle is as follows: the input light is injected by the input waveguide, is divided into two paths by the beam splitting structure, respectively enters the two waveguide arms, and changes the refractive index of the waveguide arms by applying an electric field on the waveguide arms and utilizing the electro-optical effect of lithium niobate, so that the optical paths of the two beams of light are different, and when the two beams of light are converged at the beam combining structure, the phase difference exists, the intensity of the output light is different due to the difference of the phase difference, and the effect of intensity modulation is realized.
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
Fig. 1 is a schematic diagram of a top view angle of a thin film lithium niobate modulator with electrode layered climbing according to an embodiment of the present invention. Fig. 2 is a schematic structural diagram of a cross-sectional angle of a thin film lithium niobate modulator with electrode layered climbing according to an embodiment of the present invention, specifically, a schematic structural diagram of the thin film lithium niobate modulator taken along the position indicated by A-A' in fig. 1.
In an embodiment of the present invention, a thin film lithium niobate modulator with layered climbing of an electrode is provided, and with reference to fig. 1 to 2, the thin film lithium niobate modulator with layered climbing of an electrode includes:
a substrate layer 10;
a silicon dioxide layer 20 prepared on the substrate 10;
the lithium niobate thin film layer 30 is prepared on the silicon dioxide layer 20, and a mach-zehnder structure is prepared on the lithium niobate thin film layer 30, wherein the mach-zehnder structure comprises:
an input terminal 31 for injecting input light and dividing the input light into two paths of light;
two optical waveguides 32 formed on the surface of the lithium niobate thin film layer, the two optical waveguides 32 being configured to transmit the two light paths respectively; and
an output end 33, configured to combine and output the two modulated light paths;
the electrode layer comprises a plurality of strip-shaped electrodes 50 arranged beside each optical waveguide 32, so that the strip-shaped electrodes 50 form an electric field to modulate light in the two optical waveguides 32 after being electrified, and an overlapping area exists between the strip-shaped electrodes 50 and the optical waveguides 32; and
and a multi-layer dielectric isolation layer disposed in an overlapping region of the stripe electrode and the optical waveguide 32 and interposed between the optical waveguide 32 and the stripe electrode to generate an isolation effect between the stripe electrode and the optical waveguide 32.
According to an embodiment of the present invention, the material for preparing the multi-layer dielectric barrier layer is selected from silicon dioxide or silicon nitride.
According to an embodiment of the present invention, the multi-layer dielectric barrier layer includes two dielectric barrier layers; or the multi-layer dielectric isolation layer comprises three layers and more dielectric isolation layers, such as three layers of dielectric isolation layers, four layers of dielectric isolation layers, five layers of dielectric isolation layers or more dielectric isolation layers according to actual requirements.
According to the embodiment of the invention, the multi-layer dielectric isolation layers are stacked up and down, and the area of the dielectric isolation layer above is smaller than that of the dielectric isolation layer below the dielectric isolation layer. The strip electrode 50 has a layered stepwise climbing and lifting structure and a turning structure due to the arrangement of the multi-layer dielectric isolation layers when passing through the overlapping region. As shown in fig. 2, the multi-layered dielectric isolation layer includes two dielectric isolation layers, namely, a first dielectric isolation layer 41 located below and a second dielectric isolation layer 42 located on the first dielectric isolation layer 41, and as can be seen from fig. 2, the area of the second dielectric isolation layer 42 is smaller than that of the first dielectric isolation layer 41, that is, the area of the multi-layered dielectric isolation layer gradually decreases along the direction extending upwards from the substrate, thereby generating a step structure at the edge regions of the first dielectric isolation layer 41 and the second dielectric isolation layer 42, and when the strip electrode passes through the overlap region a, b, c, d, the step structure is lifted up along the climbing of the step structure in a stepwise manner, the above arrangement reduces the etching difficulty of each layer of dielectric isolation layer and the thickness unevenness of the metal electrode climbing table, and the strip electrode 50 is separated from the optical waveguide 32 in the vertical direction by the multi-layered dielectric isolation layer in the overlap region, thereby reducing the light loss caused by metal absorption.
According to the embodiment of the invention, the number of the overlapping areas is determined according to practical application conditions, and as shown in fig. 1, the overlapping areas comprise four overlapping areas, namely an overlapping area a, an overlapping area b, an overlapping area c and an overlapping area d, a modulation area between the overlapping areas a and b is a radio frequency modulation area, and a modulation area between the overlapping areas c and d is a direct current modulation area. The size and the number of layers of the dielectric isolation layers arranged in different overlapping areas can be adjusted according to actual application conditions.
According to an embodiment of the present invention, the input end 31 includes a beam splitting structure, where the beam splitting ratio of the beam splitting structure is 1:1, and the beam splitting structure is a Y-branch, a directional coupler, or a multimode interferometer.
According to an embodiment of the invention, the output 33 comprises a beam combining structure, which is a Y-branch, a directional coupler or a multimode interferometer.
The invention also provides a preparation method of the electrode layered climbing film lithium niobate modulator, which is used for preparing the electrode layered climbing film lithium niobate modulator, and the preparation method of the electrode layered climbing film lithium niobate modulator is shown in combination with fig. 3, 1 and 2 and comprises the following steps:
operation S1: preparing a silicon oxide layer 20 and a lithium niobate thin film layer 30 on the substrate layer 10;
operation S2: preparing a Mach-Zehnder structure on the lithium niobate thin film layer 30, the Mach-Zehnder structure including two optical waveguides 32;
operation S3: planning a strip electrode path, and preparing a multi-layer dielectric isolation layer on the lithium niobate thin film in the strip electrode path and at the overlapping area of the optical waveguide 32; and
operation S4: strip electrodes 50 are prepared at the side and overlapping areas of each optical waveguide 32 to complete the preparation of the thin film lithium niobate modulator with layered climbing of the electrodes.
According to the embodiment of the present invention, in operation S1 and operation S2, the silicon dioxide layer 20 and the lithium niobate thin film layer 30 are prepared on the substrate layer 10 to obtain a thin film lithium niobate on insulator structure, or a mach-zehnder structure may be directly obtained by processing a passive waveguide based on a wafer composed of the thin film lithium niobate on insulator, for example, the input end 31, the two optical waveguides 32, and the output end 33 are prepared on the lithium niobate thin film 30 by photolithography and etching technology; the input end 31 includes a beam splitting structure, the beam splitting ratio of the beam splitting structure is 1:1, and the beam splitting structure is a Y-branch, a directional coupler or a multimode interferometer. The output 33 comprises a beam combining structure, which is a Y-branch, a directional coupler, or a multimode interferometer.
According to an embodiment of the present invention, in operation S3, a dielectric thin film with a certain thickness is deposited on the lithium niobate thin film layer according to the planned stripe-shaped electrode path by using a plasma enhanced chemical vapor deposition process, and then a first dielectric isolation layer located in the stripe-shaped electrode path and at the overlapping region (such as overlapping region a, overlapping region b, overlapping region c, overlapping region d shown in fig. 1) of the optical waveguide 32 is obtained by dry or wet etching; then a second dielectric isolation layer is prepared on the first dielectric isolation layer through the same process, and similarly, more dielectric isolation layers can be prepared according to practical application. The shape of the dielectric barrier may be rectangular, circular, or other shapes.
According to the embodiment of the present invention, in operation S4, a layer of gold is deposited on the lithium niobate thin film layer 30 by an electron beam evaporation process, and an electrode layer is formed according to a planned stripe electrode path by a lift-off process, and as shown in fig. 1 and 2, the electrode layer includes a plurality of stripe electrodes 50 disposed beside each of the optical waveguides 32, so that the stripe electrodes 50 form an electric field to modulate light in the two optical waveguides 32 after being electrified, overlapping areas (such as overlapping area a, overlapping area b, overlapping area c, overlapping area d shown in fig. 1) of the stripe electrodes 50 and the optical waveguides 32 exist, and a multi-layer dielectric isolation layer is interposed between the optical waveguides 32 and the stripe electrodes 50 to generate an isolation effect between the stripe electrodes 50 and the optical waveguides 32, by which the electro-optical interaction area electrode is a coplanar traveling wave electrode, and the overlapping area of the optical waveguides 32 separates the stripe electrodes 50 and the optical waveguides 32 in a vertical direction by the multi-layer dielectric isolation layer, thereby reducing optical loss caused by metal absorption.
Thus, embodiments of the present invention have been described in detail with reference to the accompanying drawings. It should be noted that, in the drawings or the text of the specification, implementations not shown or described are all forms known to those of ordinary skill in the art, and not described in detail. Furthermore, the above definitions of the elements and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and may be simply modified or replaced by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize the thin film lithium niobate modulator of the present invention in which the electrode is layered and climbed, and the preparation method thereof.
In summary, the invention provides a thin film lithium niobate modulator with layered climbing electrodes and a preparation method thereof, and the thin film lithium niobate modulator is characterized in that a multi-layer dielectric isolation layer is manufactured in the overlapping area of an optical waveguide and the electrodes, so that the electrodes are separated from the waveguide in the vertical direction, and the light loss caused by metal absorption is reduced.
It should also be noted that unless specifically described or necessary to occur sequentially, the order of the above operations is not limited to that listed above and may be varied or rearranged depending on the desired design.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (8)
1. A thin film lithium niobate modulator with layered climbing electrodes, comprising:
a substrate layer;
a silicon dioxide layer prepared on the substrate;
the lithium niobate thin film layer is prepared on the silicon dioxide layer, and a Mach-Zehnder structure is prepared on the lithium niobate thin film layer, and comprises the following components:
the input end is used for injecting input light and dividing the input light into two paths of light;
the two optical waveguides are formed on the surface of the lithium niobate thin film layer, and are used for respectively transmitting the two paths of light and carrying out electro-optic modulation under the action of an external electric field; and
the output end is used for combining and outputting the two paths of modulated light;
the electrode layer comprises a plurality of strip-shaped electrodes arranged beside each optical waveguide, so that the strip-shaped electrodes form an electric field to modulate light in the two optical waveguides after being electrified, and an overlapping area exists between the strip-shaped electrodes and the optical waveguides; and
the multi-layer dielectric isolation layer is arranged in the overlapping area of the strip electrode and the optical waveguide and is clamped between the optical waveguide and the strip electrode so as to generate an isolation effect between the strip electrode and the optical waveguide;
the multi-layer dielectric isolation layers are stacked up and down, and the area of the dielectric isolation layer above is smaller than that of the dielectric isolation layer below the dielectric isolation layer; when the strip-shaped electrode passes through the overlapping area, the strip-shaped electrode has a layered gradual climbing and lifting structure due to the arrangement of the multi-layer medium isolating layers.
2. The thin film lithium niobate modulator of claim 1, wherein the strip electrode has a cornering structure when passing through the overlapping region.
3. The thin film lithium niobate modulator of claim 1, wherein the material of the multilayer dielectric barrier layer is selected from silicon dioxide or silicon nitride.
4. The electrode layered climbing thin film lithium niobate modulator of claim 1, wherein the multi-layer dielectric barrier layer comprises two dielectric barrier layers.
5. The thin film lithium niobate modulator of claim 1, wherein the multi-layer dielectric barrier layer comprises three or more dielectric barriers.
6. The thin film lithium niobate modulator of claim 1, wherein the input end comprises a beam splitting structure, the beam splitting structure has a beam splitting ratio of 1:1, and the beam splitting structure is a Y-branch, a directional coupler, or a multimode interferometer.
7. The thin film lithium niobate modulator of claim 1, wherein the output comprises a beam combining structure that is a Y-branch, a directional coupler, or a multimode interferometer.
8. A method for preparing a thin film lithium niobate modulator of electrode layered climbing, for preparing the thin film lithium niobate modulator of electrode layered climbing according to any one of claims 1 to 7, characterized in that the method for preparing the thin film lithium niobate modulator of electrode layered climbing comprises:
preparing a silicon dioxide layer and a lithium niobate thin film layer on the substrate layer;
preparing a Mach-Zehnder structure on the lithium niobate thin film layer;
planning a strip-shaped electrode path, and preparing a multi-layer dielectric isolation layer on the lithium niobate thin film in the strip-shaped electrode path and at the overlapping area of the optical waveguide; and
and preparing strip-shaped electrodes at the side and overlapping areas of each optical waveguide, and finishing the preparation of the thin film lithium niobate modulator with layered climbing of the electrodes.
Priority Applications (1)
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| CN114171642A (en) * | 2021-12-08 | 2022-03-11 | 中国电子科技集团公司第四十四研究所 | Preparation method of coplanar N electrode of InGaAs focal plane photoelectric detector |
| CN115079450A (en) * | 2022-05-06 | 2022-09-20 | 华中科技大学 | Thin film lithium niobate modulator |
| WO2023000966A1 (en) * | 2021-07-20 | 2023-01-26 | 京东方科技集团股份有限公司 | Piezoelectric device and preparation method therefor, panel, and tactile reproduction apparatus |
| CN116133477A (en) * | 2022-12-22 | 2023-05-16 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN116209315A (en) * | 2023-02-24 | 2023-06-02 | 视涯科技股份有限公司 | Display panel and manufacturing method |
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| US9020306B2 (en) * | 2013-03-14 | 2015-04-28 | The Aerospace Corporation | Stable lithium niobate waveguide devices, and methods of making and using same |
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| WO2023000966A1 (en) * | 2021-07-20 | 2023-01-26 | 京东方科技集团股份有限公司 | Piezoelectric device and preparation method therefor, panel, and tactile reproduction apparatus |
| CN114171642A (en) * | 2021-12-08 | 2022-03-11 | 中国电子科技集团公司第四十四研究所 | Preparation method of coplanar N electrode of InGaAs focal plane photoelectric detector |
| CN115079450A (en) * | 2022-05-06 | 2022-09-20 | 华中科技大学 | Thin film lithium niobate modulator |
| CN116133477A (en) * | 2022-12-22 | 2023-05-16 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
| CN116209315A (en) * | 2023-02-24 | 2023-06-02 | 视涯科技股份有限公司 | Display panel and manufacturing method |
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