CN116397217A - 远程等离子体单元及包括其的衬底处理设备 - Google Patents
远程等离子体单元及包括其的衬底处理设备 Download PDFInfo
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Abstract
公开了一种衬底处理设备。示例性衬底处理设备包括反应室;远程等离子体单元;配置成将远程等离子体单元流体联接到反应室的清洁气体管线;以及设置在反应室的侧壁中的室衬里;其中清洁气体管线通过清洁气体开口连接到反应室的侧壁;其中该室衬里设置有多个孔,流体联接到清洁气体开口。
Description
技术领域
本公开总体涉及远程等离子体单元。更具体地,本公开的示例性实施例涉及远程等离子体单元和包括远程等离子体单元的衬底处理设备。
背景技术
在沉积步骤已经在反应室中执行之后,反应室可能需要清洁以去除可能已经在室壁上形成的不期望的沉积残余物。清洁反应室的一种方法是使用远程等离子体单元(RPU)。在美国专利申请公开号US2021/0071296中公开了一种具有RPU的示例性衬底处理设备,该专利申请通过引用结合于此。
远程等离子体清洁是一种清洁技术,其中利用远程等离子体源在反应室外产生等离子体和活性自由基。需要均匀地清洁反应室。产生的等离子体和活性自由基可以帮助均匀地清洁反应室。
本部分中阐述的任何讨论,包括对问题和解决方案的讨论,已被包括在本公开中,仅仅是为了提供本公开的背景,并且不应被认为是承认任何或所有的讨论在本发明被做出时是已知的,或者以其他方式构成现有技术。
发明内容
提供本发明内容是为了以简化的形式介绍一些概念。这些概念在以下公开的示例实施例的详细描述中被进一步详细描述。本发明内容不旨在标识所要求保护的主题的关键特征或必要特征,也不旨在用于限制所要求保护的主题的范围。
根据本公开的示例性实施例,提供了一种衬底处理设备。该衬底处理设备可以包括反应室;远程等离子体单元;配置成将远程等离子体单元流体联接到反应室的清洁气体管线;以及设置在反应室的侧壁中的室衬里;其中清洁气体管线通过清洁气体开口连接到反应室的侧壁;其中室衬里设置有多个孔,流体联接到清洁气体开口。
在各种实施例中,孔可以在室衬里上等距隔开。
在各种实施例中,衬底处理设备还可以包括位于反应室内的基座,该基座构造和布置成支撑衬底。
在各种实施例中,衬底处理设备还可以包括构造和布置成面对基座的喷淋板。
在各种实施例中,衬底处理设备可以进一步包括设置在远程等离子体单元和喷淋板之间的第二清洁管线。
在各种实施例中,第二清洁气体管线可以设置有过程气体管线,以通过喷淋板向反应室供应过程气体。
在各种实施例中,一种衬底处理设备可以包括反应室;远程等离子体单元;配置成将远程等离子体单元流体联接到反应室的清洁气体管线;设置在反应室的侧壁中的室衬里;以及设置在反应室的底部和室衬里的底部之间的间隙,其中清洁气体管线通过清洁气体开口连接到反应室的侧壁;其中该间隙配置成流体联接清洁气体开口。
在各种实施例中,衬底处理设备还可以包括位于反应室内的基座,该基座构造和布置成支撑衬底。
在各种实施例中,衬底处理设备还可以包括构造和布置成面对基座的喷淋板。
在各种实施例中,衬底处理设备可以进一步包括设置在远程等离子体单元和喷淋板之间的第二清洁管线。
在各种实施例中,第二清洁气体管线可以设置有过程气体管线,以通过喷淋板向反应室供应过程气体。
附图说明
当结合以下说明性附图考虑时,通过参考详细描述和权利要求,可以获得对本公开的示例性实施例的更完整的理解。
图1是可用于本发明实施例的具有双室模块的半导体处理设备的示意平面图。
图2是本发明实施例中双室模块的示意性截面图。
图3是本发明实施例中反应室的示意性截面图。
图4是本发明另一实施例中反应室的示意性截面图。
应当理解,附图中的元件是为了简单和清楚而示出的,并不一定是按比例绘制的。例如,图中一些元件的尺寸可能相对于其他元件被夸大,以帮助理解本公开的所示实施例。
具体实施方式
尽管下面公开了某些实施例和示例,但本领域技术人员将理解,本公开延伸到具体公开的实施例和/或本公开的用途及其明显的修改和等同物之外。因此,意图是本公开的范围不应被这里描述的特定实施例所限制。
本文呈现的图示并不意味着是任何特定材料、装置、结构或设备的实际视图,而仅仅是用于描述本公开的实施例的表示。
在本公开中,“气体”可以包括在常温常压下为气体的材料、蒸发的固体和/或蒸发的液体,并且可以由单一气体或气体混合物构成,这取决于情况。不经过气体供应单元(例如喷淋板等)而引入的气体可以用于例如密封反应空间,并且可以包括密封气体,例如稀有气体或其他惰性气体。术语惰性气体指的是在可感知的程度上不参与化学反应的气体和/或当施加等离子体功率时能够激发前体的气体。
如本文所用,术语“衬底”可以指可以使用或者可以在其上形成器件、电路或膜的任何一种或多种底层材料,其通常是半导体晶片。
如本文所用,术语“膜”和“薄膜”可以指通过本文公开的方法沉积的任何连续或不连续的结构和材料。例如,“膜”和“薄膜”可以包括2D材料、纳米棒、纳米管或纳米颗粒,或者甚至部分或全部分子层或者部分或全部原子层或者原子和/或分子的簇。“膜”和“薄膜”可包括具有针孔的材料或层,但仍至少部分连续。
图1是本发明实施例中具有双室模块的衬底处理设备的示意平面图。衬底处理设备可以包括四个处理模块1a、1b、1c、1d(每个设置有两个反应室12、22)、装载锁定室5和设置有后端机器人3的衬底处理室4。
在该实施例中,衬底处理设备可以包括:(i)四个处理模块1a-1d,每个具有并排布置的两个反应室12、22,它们的前部对准成一条线;(ii)衬底处理室4,包括两个后端机器人3(衬底处理机器人);以及(iii)用于同时装载或卸载两个衬底的装载锁定室5,装载锁定室5附接到衬底处理室4的一个附加边,其中每个后端机器人3可接近装载锁定室5。每个后端机器人3具有至少两个可同时接近每个单元的两个反应室的末端执行器,所述衬底处理室4具有多边形形状,具有分别对应于并附接到四个处理模块1a-1d的四个边,以及用于装载锁定室5的一个附加边,所有边都设置在同一平面上。每个反应室12、22的内部和装载锁定室5的内部可以通过闸阀9与衬底处理室4的内部隔离。
例如,在一些实施例中,控制器(未示出)可以存储被编程为执行衬底转移序列的软件。控制器还可以:检查每个处理室的状态;使用感测系统在每个处理室中定位衬底,控制每个模块的气体箱和电气箱;基于存储在FOUP8和装载锁定室5中的衬底的分布状态,控制设备前端模块6中的前端机器人7;控制后端机器人3;以及控制闸阀9和其他阀。
本领域技术人员可以理解,该设备包括一个或多个控制器,该控制器被编程或以其他方式配置为进行本文其他地方描述的沉积和反应器清洁过程。如本领域技术人员将理解,控制器可以与各种电源、加热系统、泵、机器人、气流控制器或阀通信。
在一些实施例中,该设备可以具有多于一个(例如2、3、4、5、6或7个)的任何数量的反应室和处理模块。在图1中,设备具有八个反应室,但是它可以具有十个或更多个。在一些实施例中,模块的反应器可以是用于加工或处理晶片的任何合适的反应器,包括CVD反应器(例如等离子体增强CVD反应器和热CVD反应器)或ALD反应器(例如等离子体增强ALD反应器和热ALD反应器)。通常,反应室可以是用于在晶片上沉积薄膜或层的等离子体反应器。在一些实施例中,所有模块可以是相同类型的,具有相同的处理晶片的能力,使得卸载/装载可以顺序地和有规律地定时,从而提高生产率或产量。在一些实施例中,模块可以具有不同的能力(例如不同的处理),但它们的处理时间可以基本相同。
图2是本发明实施例中双室模块的示意性截面图。在反应室12中,可以设置喷淋板14和基座13,并且在反应室22中,可以设置喷淋板24和基座23。基座13、23可以支撑衬底,并由内置加热器或外部加热器加热,从而控制衬底的温度。
喷淋板14、24可以构造和布置成面对基座13、23。喷淋板14、24可以设置有多个孔,使得过程气体被供应到放置在基座13、23上的衬底,从而导致薄膜沉积到衬底上。
远程等离子体单元(RPU)40可以设置在反应室12、22上方。清洁气体可以从清洁气体源(未示出)供应到RPU40,从而转变成气体自由基、气体离子或两者(反应性气体)。清洁气体可以是例如Ar、O2、NF3、C2F6或SF6中的至少一种。
可以使用中央清洁气体管线42和第二清洁气体管线17、27通过喷淋头14、24将清洁气体引入反应室12、22。第二清洁气体管线17、27可以从分裂点基本对称地布置在反应室12、22之间。中央清洁气体管线42的第一端可以连接至RPU40。共享清洁气体管线42的另一端可以分成三个气体管线,即第二清洁气体管线17、27和第三清洁气体管线44。
第二清洁气体管线17、27中的每个可以设置有RPU闸阀19、29和过程气体管线11、21。当过程气体通过过程气体管线11、21和喷淋头14、24供应到衬底时,RPU闸阀19、29可以关闭,从而防止清洁气体混合到过程气体中。
也可以使用中央清洁气体管线42、第三清洁气体管线44和第一清洁气体管线15、25将清洁气体引入反应室12、22的下部区域。第一清洁气体管线15、25可以从分裂点基本对称地布置在反应室12、22之间。每个第一清洁气体管线15、25可以设置有阀16、26。
控制器(未示出)可以配置成在打开位置和关闭位置之间控制阀16、26。当过程气体被供应到衬底时,阀16、26可以关闭,从而防止反应室12、22之间的串扰。
图3是本发明实施例中的室模块的示意性截面图。清洁气体管线15可以通过清洁气体开口18连接到反应室12的侧壁。室衬里52可以设置在反应室12的侧壁中。室衬里52可以具有多个孔55,这些孔流体联接到清洁气体开口18。孔55可以在室衬里52上等距间隔,从而均匀地清洁反应室。室衬里可以包括Al2O3或AlN。
图4是本发明另一实施例中反应室的示意性截面图。代替图3中的孔55,可以在反应室12的底部和室衬里52的底部之间提供间隙57。间隙57的距离可以是0.3mm到20mm。
上述公开的示例实施例不限制本发明的范围,因为这些实施例仅仅是本发明实施例的示例。任何等同的实施例都在本发明的范围内。实际上,除了在此示出和描述的那些之外,本公开的各种修改,例如所描述的元件的可替代的有用组合,对于本领域技术人员来说从描述中会变得显而易见。这种修改和实施例也旨在落入所附权利要求的范围内。
Claims (11)
1.一种衬底处理设备,包括:
反应室;
远程等离子体单元;
清洁气体管线,其配置成将远程等离子体单元流体联接到反应室;以及
设置在反应室的侧壁中的室衬里;
其中,清洁气体管线通过清洁气体开口连接到反应室的侧壁;
其中,室衬里设置有多个孔,流体联接到清洁气体开口。
2.根据权利要求1所述的衬底处理设备,其中,所述孔在所述室衬里上等距隔开。
3.根据权利要求1所述的衬底处理设备,还包括位于所述反应室内的基座,所述基座构造和布置成支撑衬底。
4.根据权利要求2所述的衬底处理设备,还包括喷淋板,所述喷淋板构造和布置成面对所述基座。
5.根据权利要求4所述的衬底处理设备,还包括设置在所述远程等离子体单元和喷淋板之间的第二清洁管线。
6.根据权利要求5所述的衬底处理设备,其中,所述第二清洁气体管线设置有过程气体管线,以通过所述喷淋板向所述反应室供应过程气体。
7.一种衬底处理设备,包括:
反应室;
远程等离子体单元;
清洁气体管线,其配置成将远程等离子体单元流体联接到反应室;
设置在反应室的侧壁中的室衬里;以及
设置在反应室的底部和室衬里的底部之间的间隙,
其中,清洁气体管线通过清洁气体开口连接到反应室的侧壁;
其中,间隙配置成流体联接清洁气体开口。
8.根据权利要求7所述的衬底处理设备,还包括位于所述反应室内的基座,所述基座构造和布置成支撑衬底。
9.根据权利要求8所述的衬底处理设备,还包括喷淋板,所述喷淋板构造和布置成面对所述基座。
10.根据权利要求9的衬底处理设备,还包括设置在所述远程等离子体单元和喷淋板之间的第二清洁管线。
11.根据权利要求10所述的衬底处理设备,其中,所述第二清洁气体管线设置有过程气体管线,以通过所述喷淋板向所述反应室供应过程气体。
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