CN116388552A - Switching circuit control method, control chip and switching circuit - Google Patents

Switching circuit control method, control chip and switching circuit Download PDF

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Publication number
CN116388552A
CN116388552A CN202310668140.5A CN202310668140A CN116388552A CN 116388552 A CN116388552 A CN 116388552A CN 202310668140 A CN202310668140 A CN 202310668140A CN 116388552 A CN116388552 A CN 116388552A
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valley
switching
current
valley bottom
working stage
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CN116388552B (en
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林思聪
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Fanta Semiconductor Technology Hangzhou Co ltd
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Fanta Semiconductor Technology Hangzhou Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H02M1/4225—Arrangements for improving power factor of AC input using a non-isolated boost converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The embodiment of the invention provides a switching circuit control method, a control chip and a switching circuit. The switching circuit control method is used for controlling a switching circuit, the switching circuit at least comprises an inductor and a switching tube capable of controlling the inductor to perform excitation, and the switching circuit at least comprises an N-th working stage, an (N+1) -th working stage … … and an (N+M) -th working stage; in the N working stage, the switching tube is opened at the Nth valley bottom, in the (N+1) working stage, the switching tube is opened … … at the (N+1) th valley bottom, in the (N+M) working stage, the switching tube is opened at the (N+M) th valley bottom; when the first preset condition group is met, the switching circuit is sequentially switched to the (N+M) th working stage from the N-th working stage and the (N+1) th working stage … …; wherein N and M are positive integers; the first preset condition group characterizes that the reference current of the inductor gradually decreases. The control method can sequentially and adaptively control the switching tube to be turned on at the valley bottom, and has a more stable control effect.

Description

Switching circuit control method, control chip and switching circuit
Technical Field
The present invention relates to the field of switch circuit control, and in particular, to a switch circuit control method, a control chip, and a switch circuit.
Background
Figure 1 illustrates a single phase BOOST PFC controller and its circuitry operating with a conventional CRM or DCM. Taking this circuit as an example, in a switching circuit operating in the CRM/DCM multimode, the dead time Tdcmaff in the DCM mode is calculated, if Tdcmaff time is between 3 and 4, it is possible to jump to 3 on, if 5 is the bottom of the previous switching cycle, it is possible to start the bottom from the frontThe valley bottom 5 of one switching period jumps to the valley bottom 3, so that not only the input current is distorted (the average value current is inaccurate) because the valley bottom 3 is selected to be opened, but also the problem that the input current is distorted because of oscillation because the valley bottom is opened at different valley bottoms can occur, and the iTHD is increased; fig. 2 illustrates this situation. In CRM mode, the switching tube is turned on in the first valley, and when switching to DCM, it is possible to directly jump from the first valley to the third valley or more, sometimes even not, which may lead to peak jump of inductor current, such as I dcm-pk2 Jump to I crm-pk3 If the current peak value is suddenly changed greatly, oscillation is easily caused, and input current is distorted.
Disclosure of Invention
In view of the above, the embodiment of the invention provides a switch circuit control method, a control chip and a switch circuit. The control method can select different valley numbers to be opened according to different working phases, so that stable switching between different working phases can be realized.
In order to solve the technical problems, the application adopts the following technical scheme:
a control method of a switching circuit, which is used for controlling the switching circuit, wherein the switching circuit at least comprises an inductor and a switching tube capable of controlling the inductor to be excited, and the switching circuit at least comprises an N-th working stage, an (n+1) -th working stage … … and an (n+M) -th working stage; in the N working stage, the switching tube is opened at the Nth valley bottom, and in the (N+1) working stage; the switching tube is opened … … at the (N+1) th valley bottom in the (N+M) th working stage, and the switching tube is opened at the (N+M) th valley bottom; when the first preset condition group is met, the switching circuit is sequentially switched from an N-th working stage and an (N+1) -th working stage … … to an (N+M) -th working stage; wherein N and M are positive integers; the first preset condition group characterizes that the reference current of the inductor gradually decreases.
According to the control method, the number of the bottoms of the valleys is increased one by one to control the switching tube to be turned on according to whether the first preset condition group is met, and the energy difference generated is small because only one change of the number of the bottoms of the valleys is turned on in the adjacent working stages, namely the change of the inductance current is small, so that the switching stability is ensured.
A switch circuit control chip, which is suitable for controlling a switch circuit, wherein the switch circuit at least comprises an inductor and a switch tube capable of controlling the inductor to be excited, and the switch circuit at least comprises an N-th working stage and an (n+1) -th working stage … … and an (n+M) -th working stage; in the N working stage, the switching tube is opened at the Nth valley bottom; in the (n+1) th working stage, the switching tube is opened … … at the (n+1) th valley bottom, and in the (n+m) th working stage, the switching tube is opened at the (n+m) th valley bottom; the switch circuit control chip at least comprises an adaptive valley bottom number generating unit and an adaptive valley bottom locking control unit; the self-adaptive valley bottom number generating unit is used for adding 1 to N to obtain an open valley bottom number of the next working state when a first preset condition group is met, updating N by using (N+1) until the open valley bottom number (N+M) of the (N+M) th working stage is obtained, and sending the open valley bottom number of each working stage to the self-adaptive valley bottom locking control unit; the first preset condition group represents that the reference current of the inductor gradually decreases; the self-adaptive valley locking control unit is used for generating a corresponding control signal for controlling the switching tube to be switched on according to the switching valley bottom number calculated by the self-adaptive valley bottom number parameter generation unit; wherein N and M are positive integers.
The control chip can realize that the number of the bottoms of the valleys is increased one by one according to whether the first preset condition group is met or not to control the switching tube to be turned on, and the energy difference generated is small because only one change of the number of the bottoms of the valleys turned on in the adjacent working stages is generated, namely the change of the inductance current is small, so that the switching stability is ensured.
A switching circuit comprises a switching unit, an output voltage sampling unit, an input voltage sampling unit, a current sampling unit, an inductance current zero-crossing sampling unit and the switching circuit control chip; the output voltage sampling unit is electrically connected with the output end of the switch unit and is used for sampling an output voltage sampling signal; the input voltage sampling unit is electrically connected with the input end of the switch unit and is used for sampling an input voltage sampling signal; the output voltage sampling unit and the input voltage sampling unit are also electrically connected with a reference current generating unit of the switch circuit control chip; the current sampling unit is electrically connected with the switch unit and is used for sampling an inductance current sampling signal of the switch unit; the inductance current zero-crossing sampling unit is electrically connected with the switching unit and is used for acquiring an inductance current zero-crossing signal of the inductance of the switching unit; the current sampling unit is electrically connected with the Ton signal control unit of the switch circuit control chip; the inductance current zero-crossing sampling unit is electrically connected with the self-adaptive valley locking control unit of the switch circuit control chip; the switch circuit control chip is at least used for controlling the switch unit to work according to the output voltage sampling signal, the input voltage sampling signal, the inductance current sampling signal and the inductance current zero crossing signal.
Under the control of the switch circuit control chip, the switch circuit can realize that the number of the bottoms of the valleys is increased one by one to turn on the switch tube, and the energy difference generated is small because the number of the bottoms of the valleys which are turned on in the adjacent working stages is changed only by one, namely the change of inductance current is small, so that the stability of circuit control is ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art, but shall fall within the scope of protection of the present application.
FIG. 1 is a schematic diagram of a boost circuit in the prior art;
FIG. 2 is a schematic waveform diagram of the boost circuit shown in FIG. 1;
FIG. 3 is a flowchart of a control method according to an embodiment of the present invention;
FIG. 4 is a schematic waveform diagram illustrating a control method according to the embodiment of the present invention shown in FIG. 3;
FIG. 5 is a schematic waveform diagram of a first/second predetermined condition group according to an embodiment of the present invention;
FIG. 6 is another waveform diagram of a first predetermined condition group/second predetermined condition group according to an embodiment of the present invention;
FIG. 7 is a schematic waveform diagram of a second first/second predetermined condition group according to an embodiment of the present invention;
FIG. 8 is a waveform diagram of a third first/second predetermined condition set according to an embodiment of the present invention;
fig. 9 is a schematic diagram of waveforms for obtaining a valley bottom by using a timing manner according to an embodiment of the present invention;
FIG. 10 is a flowchart of a switching tube on control with maximum off time according to an embodiment of the present invention;
FIG. 11 is a schematic flow chart of obtaining the maximum number of bottom of grains according to an embodiment of the present invention;
fig. 12 is a block diagram of a control chip of a switch circuit according to an embodiment of the present invention;
FIG. 13 is a block diagram of another switch circuit control chip according to an embodiment of the present invention;
fig. 14 is a schematic diagram of a switching circuit according to an embodiment of the present invention.
Detailed Description
For a better understanding of the technical solution of the present invention, the following detailed description of the embodiments of the present invention refers to the accompanying drawings.
It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Electrical connections include direct electrical connections and indirect electrical connections.
It should be understood that the term "and/or" as used herein is merely one way of describing an association of associated objects, meaning that there may be three relationships, e.g., a and/or b, which may represent: the first and second cases exist separately, and the first and second cases exist separately. In addition, the character "/" herein generally indicates that the front and rear associated objects are an "or" relationship.
The topology of the switch circuit is a BOOST circuit, a totem pole bridgeless BOOST PFC circuit, a buck circuit, a flyback circuit and the like. The switching circuit at least comprises a switching tube and an inductor, and a common single-phase boost circuit is shown in fig. 1, and a power conversion function or a power factor correction function is realized by controlling the switching tube Q. According to the control form of the inductor current, the switching circuit has 3 modes of operation: CCM operation mode (Continuous Conduction Mode: inductor current continuous mode), DCM operation mode (Discontinuous Conduction Mode: inductor current discontinuous mode), and CRM operation mode (Critical Conduction mode: critical conduction mode). The control method for switching the DCM operation mode or the CRM operation mode to the DCM operation mode is mainly improved to realize more optimal control.
Specifically, the embodiment of the application provides a control method of a switching circuit, which is used for controlling the switching circuit, wherein the switching circuit at least comprises an inductor and a switching tube capable of controlling the inductor to be excited, and the switching circuit at least comprises (M+1) working phases: an nth working phase, an (n+1) th working phase … … an (n+m) th working phase. The switching tube in each working stage is different in opening the valley, but 1 is increased or decreased in sequence: in the N working stage, the switching tube is opened at the Nth valley bottom; in the (n+1) th working stage, the switching tube is turned on … … at the (n+1) th valley bottom, and in the (n+m) th working stage, the switching tube is turned on at the (n+m) th valley bottom. Wherein N and M are positive integers. The switching conditions of the adjacent working phases are determined by a first preset condition group, as shown in fig. 3, the control method includes step S11: judging whether the related parameters of the switch circuit meet a first preset condition group or not; s12: if yes, switching the working stage. That is, when the first preset condition group is satisfied, the switching circuit is sequentially switched from the nth operating stage, the (n+1) th operating stage … …, to the (n+m) th operating stage. When the second preset condition group is met, the switching circuit is sequentially switched from the (n+m) th working stage to the nth working stage, namely, the switching circuit is sequentially switched from the (n+m) th working stage, the (n+m-1) th working stage … … the (n+1) th working stage to the nth working stage, and the number of the working stages is determined by the size of M. The first preset condition group characterizes the reference current of the inductor to gradually decrease, and the second preset condition group characterizes the reference current of the inductor to gradually increase.
The control method can enable the CRM to DCM to switch or enable the dead time Tdcmaff to change when the DCM works, and the change of the dead time Tdcmaff is realized according to a certain rule that the number of the bottoms of the valleys is increased one by one to be turned on or the number of the bottoms of the valleys is decreased one by one to be turned on. In the CRM working mode, the switching tube is turned on at the 1 st valley. In addition, in the control method, since the valley of each turn-on is known in advance, the average value of the inductance current can be calculated more accurately. This not only enables high efficiency to be achieved, but also small input current distortion and small iTHD.
Inductor current waveform I of the control method in DCM operation mode and when DCM is switched to CRM operation mode L The Vds waveform of the switching tube, the Vrst timing chart of the switching tube turn-off signal, the Vsetzcd timing chart of the Vds valley, and the Vgate timing chart of the driving signal of the switching tube are shown in fig. 4, specifically, the third working stage (third valley turn-on) and the second working stage (second valley turn-on) in the DCM working mode are used to switch the first working stage (first valley turn-on) in the CRM working mode. Vds refers to the voltage between the drain (D pole) and source (S pole) of the switching tube, and the change in Vds during dead time is due to parasitic capacitance/electricity of the switching tube The sense is generated by resonance with other devices. As shown in fig. 4, in DCM operation mode and when DCM is switched to CRM, the DCM is opened at different valleys according to a certain specification, and the number of valleys is increased or decreased one by one, that is, the valley is locked. When the valley bottom is locked, the Tdcmaff (n) time can be obtained in a timed manner, so that the reference current peak value I of the corresponding working phase in the DCM working mode can be regulated according to the formula (1) dcm-PK (n) or, indirectly adjusting I by switching tube on time Tdcmon (n) dcm-PK (n) making the inductance current average value of each working stage equal to I in-ac ，I in-ac Is an alternating current signal of the same frequency and phase as the input voltage.
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n）+T dcmoff （n））/ T dcmzcd (n) … formula (1);
wherein I is ref-ac (n) is the reference average value of the inductance current in the nth working stage, and I in-ac Proportional to the ratio; t (T) dcmzcd (n) is the sum of the times of excitation and demagnetization of the inductor in the nth working phase; the T is dcmoff (n) is the dead time after the inductor is demagnetized in the nth working stage; the nth working stage is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductance current reaches the peak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is not less than N and not more than (N+M).
In addition, the information of the previous switching period can also be used for adjusting the reference current peak value I dcm-PK (n), i.e. the reference current peak I of the corresponding working phase in DCM working mode is regulated by the formula (2) dcm-PK （n）；
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n-1）+T dcmoff （n-1））/T dcmzcd (n-1) … formula (2);
wherein I is ref-ac (n) is the reference average value of the inductance current in the nth working stage, and I in-ac Proportional to the ratio; t (T) dcmzcd (n-1) isThe sum of the times of excitation and demagnetization of the inductor in the (n-1) th working stage; the T is dcmoff (n-1) is dead time after the inductor is demagnetized in the (n-1) th working stage; the nth working stage is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductance current reaches the peak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is less than or equal to (N-1) and less than or equal to (N+M).
Specifically, in one embodiment, referring to fig. 5 and 6, in one power frequency cycle, the switching circuit has a plurality of modes (DCM/CRM/CCM), and the switching between modes is determined by a reference instantaneous value of the inductor current and a preset mode switching threshold value, fig. 5 has DCM, CRM and CCM operation modes; while figure 6 has CRM and DCM modes of operation. The present application does not limit the control of the CCM operation mode or the switching conditions of the modes. In this embodiment, a plurality of working phases occur in the same power frequency period, and in one power frequency period, (m+1) preset reference values are preset: refN, ref (n+1) … … Ref (n+m). The first preset condition group comprises a reference instantaneous value I of the inductor current ref_ac_trans Sequentially reducing the (N) th preset reference value RefN to the (N+M) th preset reference value Ref (N+M); the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in the same power frequency period.
The second preset condition group comprises instantaneous reference value I of inductance current ref_ac_trans Sequentially increasing the (N+M) th preset reference value Ref (N+M) to the (N) th preset reference value RefN; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in the same power frequency period.
In the embodiments shown in fig. 5 and fig. 6, the valley opening is an indication that the real-time value of the reference signal changes according to the number of valleys within a certain range within one power frequency voltage or current period. Taking n=1, m=4 as an example, ref5<Ref4<Ref3<Ref2<Ref1, when I ref_ac_trans <Ref5, the switching circuit works in a fifth working stage, and the switching tube is opened at the bottom of a fifth valley; when Ref5<I ref_ac_trans <Ref4, the switching circuit operates in the fourth operation stageThe switching tube is opened at the bottom of the fourth valley; when Ref4<I ref_ac_trans <Ref3, the switching circuit works in a third working stage, and the switching tube is opened at the third valley bottom; when Ref3<I ref_ac_trans <Ref2, the switching circuit works in the second working stage, and the switching tube is opened at the second valley bottom; when Ref2<I ref_ac_trans <Ref1, the switching circuit works in the first working stage, and the switching tube is opened at the first valley bottom and is also in the CRM working mode. The Ref1 may also be used as a mode switching threshold for switching between the CCM and the CRM operating modes, and the Rer2 may be used as a mode switching threshold for switching between the CRM and the DCM operating modes.
In another embodiment, as shown in fig. 7, the present application provides a control method of the switching circuit, that is, the number of open valleys is changed according to the reference current peak value of the inductor, but the number of open valleys is inconvenient to keep in a power frequency period. This mode of operation is appropriate for the case of CRM or DCM operation. In fig. 7, n=1 is taken as an example, and the case where the material is turned on from the valley bottom 1 to the valley bottom (1+m) is described. In this embodiment, (m+1) preset peaks are preset: refpkN, refpk (n+1) … … Refpk (n+m). The first preset condition group comprises that the reference current peak value of the inductance current is sequentially reduced from the (N) th preset peak value to the (N+M) th preset peak value; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in different power frequency periods.
The second preset condition group comprises that the reference current peak value of the inductance current is sequentially increased to an Nth preset peak value from the (N+M) th preset peak value; the nth working stage, the (n+1) th working stage … … and the (n+m) th working stage are located in different power frequency periods.
In another embodiment, to obtain the switching conditions of the different working phases, the first preset condition group may be obtained by using the following steps:
step1: determining a reference signal for determining the change in the number of valleys, the reference signal being used as a reference signal I for characterizing the input average current ref_valley Or for characterizing the reference signal I ref_valley A combination of instantaneous values and peaks of (c).
step2: the step adjustment factor A is configured. A is a constant, step is set according to efficiency, is used for optimizing efficiency debugging, step values are different, the depth advancing speed of DCM is different, and the final step value is determined according to on-state loss and switching loss.
step3: the valley switching threshold is calculated using the following formula.
I ref_valley (n~ n+1)=I ref_set /（A+n×step）;
Wherein: i ac_valley (n-n+1) refers to a current reference threshold that switches from the nth valley to the (n+1) th valley.
Let CCM be defined as 0 valleys and CRM be 1 valley. I ref_set May be defined as a mode switch threshold for a CCM operation mode to a CRM operation mode or a mode switch threshold for a CRM operation mode to a DCM operation mode.
The system may automatically configure the handoff threshold between CCM/CRM/DCM according to the above formula. And the valley bottom can be automatically locked according to the input average current and the configured parameters. And after the valley bottom is locked, a specific calculation formula is used for calculating a current loop reference in the DCM working mode, so that the input current is ensured to always follow the input voltage.
In fig. 8, the switching threshold a between CCM/CRM operation modes is configured to be 1, and the switching threshold of different step values at parameter a=1 is 0.33, 0.45, 0.59, 0.75, 0.96, 1.22, 1.56, 2, according to A, step and I ref_set The switching curve of fig. 8 is constructed. It can be seen that the step value can be set to multiple steps, and in actual operation, if the CRM operation mode frequency is too high to exceed a certain limit value, the step can be automatically switched to the next step, so as to avoid the CRM operation frequency from being too high, assuming that the default step=2 is used. The change trend of the drawing is beneficial to the switching circuit, such as a BOOST PFC converter, to work at the 1 st to 3 rd valley bottom when the power is larger, and to work at a lower valley bottom number when the power is lighter, so that the efficiency is improved.
In this embodiment, the first preset condition group is that the reference value representing the inductor current is reduced to I ref_valley (n-n+1); wherein I is ref_valley (n~ n+1)=I ref_set /（A+n×step). And the second preset condition group is that the reference value of the inductance current is increased to I ref_valley (n~n-1)=I ref_set /[A+(n-1）×Step]，I ac_valley (n-1) refers to a current reference threshold that switches from the nth valley to the (n-1) th valley.
Of course, other preset condition groups besides the first/second preset condition groups can be set to meet the working stage switching requirement. I ref_valley (n~n+1)/I ref_valley The calculation formula of (n-1) is not limited to the above example, and may be a direct proportion function, an inverse proportion function, a quadratic equation, etc., and the number of step adjustment factors is not limited to 2, and may be any number.
Further, in the above embodiment, the valley may be detected by an inductor current zero crossing detection circuit, for example, by a ZCD winding of the inductor. However, during the turn-off time of DCM operation, the oscillation amplitude of Vds gradually decreases with time, so that the inductance current also gradually decreases, and the zero-crossing detection circuit cannot detect the Vsetzcd signal, as in fig. 9, vsetzcd can be detected at the valley bottom 5, and Vsetzcd cannot be detected at the valley bottom 6 to the valley bottom 8. Under the condition, the technology of the invention provides a self-adaptive accurate simulation method for detecting the bottom of the valley, so that the bottom of the valley can be increased and opened according to the set target. The method for detecting the valley bottom by self-adaptive accurate simulation can time the time between two adjacent Vsetzcd signals, such as Tr1, tr2 and the like, wherein Tr1 and Tr2 … … are real resonance periods, a first time length Trto is used for recording the time length between the two nearest valley bottoms and a certain increment time Td is reserved, namely Trto=Tr+Td, trto is equivalent to the resonance period, and the time length is also the resonance time length of the two adjacent valley bottoms. At the beginning of each Vsetzcd signal, trto is clocked with a timer cnt_to. If the Vsetzcd signal is not asserted at a certain time and cnt_to=trto is found, then the valley has been found, and the time of this valley is taken as the time of the equivalent adjacent two valleys. If the number of the bottoms reaches the target value, generating a signal Vset for triggering the switching tube to be switched on; if not, the number of the valleys is increased by one, and the timing is repeated until the number of the valleys reaches the target value. For example, in fig. 9, taking the eighth on-valley bottom as an example, the valley bottom 5 can detect the Vsetzcd signal, but no Vsetzcd signal is detected between the valley bottom 6 and the valley bottom 8, and trto=tr4+td. When cnt_to timing reaches Trto, it is considered that the bottom is detected, the number of the bottom increases by 1, and this repetition timing generates a signal Vset that triggers the off-tube TO be turned on when the number of the bottom reaches the target bottom 8.
In this embodiment, each time the zero-crossing detection circuit detects a zero-crossing signal, the zero-crossing detection circuit counts time by using a timer cnt_t0, and if the zero-crossing detection circuit detects a zero-crossing signal during the counting time, the zero-crossing detection circuit considers that a valley is found and counts time to be zero; if the zero crossing signal is not detected and the timing duration reaches the first time length Trto, judging that the moment is the valley moment; and calculating Gu Deshu according to the zero crossing signal and the first time length Trto until Gu Deshu reaches a valley bottom number for determining that the switching tube is opened. Generally, the front several bottoms can be detected by a zero-crossing detection circuit to obtain the bottoms, and along with the decrease of the resonance capability, the bottoms of the rear resonance period need to be obtained by timing by a timer cnt_t0.
Further, in the above embodiment, if the switching circuit is operated in DCM, the open valley of each working stage can be calculated according to the above switching circuit control method (also referred to as the valley self-adaptive control algorithm). However, the time corresponding to the number of the on-valley bottom does not exceed the maximum turn-off time T of the switching tube offmax . Therefore, when the valley of the switching tube is not reached but the maximum off time is reached, the switching tube is controlled to be turned on. Maximum off time T for Gu Deshu n maximum operated by DCM offmax And a period Tr between the valleys, the period Tr being determined by the hardware design if the maximum off-time is limited to 40us or less, so that the maximum valley count is limited. In this embodiment, if the maximum valley count set according to the first preset condition group is not reached, the maximum off time of DCM operation has reached T offmax And the maximum valley bottom can generate a Vset signal without reaching a set maximum value, trigger Vgate to be positive and control the switching tube to be turned on. Fig. 10 shows a schematic flow chart for realizing the embodiment.
In the switching circuit, the minimum operating frequency is often required to be limited, and the noise recognizable by human ears is caused by the excessively low operating frequency, and current ripples caused by the excessively low operating frequency are difficult to filter. And the Gu Deshu operating frequency is different when the different input voltages are operating at the lowest frequency. The prior art often limits a fixed maximum valley bottom number, but the maximum valley bottom number is often limited by the lowest frequency before being triggered under low pressure, and the valley bottom number is easy to exceed the maximum valley bottom limit under high pressure, so that the control is unreliable, the compatibility of high pressure and low pressure cannot be realized, and the application is greatly limited. In the control method provided by the application, the value of Gu Deshu n can be adaptively changed, and the valley bottom n can be adaptively changed according to the peak value and/or the instantaneous value of the reference signal (current). The larger the reference signal value, the smaller the value of Gu Deshu n.
In addition, considering noise problems, the switching circuit is typically provided with a minimum frequency limit, such as 25kHz, which will force on when the switching period reaches a preset value, at which time the valley floor is no longer as expected, as shown in formula (1) I dcm-PK (n) input Current I under operation in-ac (n) would violate the expectation, i.e., I in-ac Distortion occurs. Therefore, the maximum valley bottom number needs to be limited, and when the parasitic capacitance of the switching tube is larger or the PFC inductance is larger, the corresponding maximum valley bottom number should take a smaller value so as to avoid I caused by the lowest frequency limitation in-ac Distortion occurs.
As mentioned above, considering that different systems need to set different maximum valley numbers to realize optimal operation, the present application also provides a self-adaptive maximum valley number selection strategy. As shown in fig. 11, an initial value N of the valley bottom configuration is preset valley_max The method comprises the steps of carrying out a first treatment on the surface of the The detection of the switching frequency is carried out in each (or every N, i.e. a plurality of) power frequency half-waves, and the switching times of the lower switching frequency (which is close to the value of the lowest limiting frequency of 25kHz, such as lower than 35 kHz) are counted and recorded as N fsw_low If N fsw_low Is greater than a preset value N fsw_th_H The maximum valley bottom number N in the next power frequency period valley_max Automatically decrease by 1, when N fsw_low Less than another preset value N fsw_th_L When the maximum valley bottom number N in the next power frequency period valley_max Automatically increasing by 1.
Under such a strategy, N, whether for different input voltages or different loads valley_max The method is characterized in that the method automatically adjusts to a comparatively optimized value, and realizes that distortion is not limited by the minimum frequency of 25kHz, and the minimum switching frequency in the power frequency half wave is adjusted to a comparatively low value; therefore, the manual debugging configuration time can be reduced, and efficiency optimization and THD optimization are both achieved in the whole working range. That is, when the switching circuit works, the maximum number of the bottoms calculated according to the first/second preset condition group is less than or equal to the number N of the bottoms determined by the maximum number of the bottoms determining module valley_max The maximum open valley bottom number, namely the valley bottom number (N+M) in the (N+M) th working stage is less than or equal to N valley_max 。
Sampling the switch circuit control method provided in the above embodiment has at least one or more of the following advantages:
1. the characteristics of high efficiency of multi-mode operation are maintained, and meanwhile, under the operation of CRM/DCM, the valley opening is ensured to be changed according to a specified rule, and the average value of the inductance current is ensured not to vibrate and distort due to the jump of the inductance current.
2. The valley bottom adjustment curve can be configured in a self-adaptive mode, so that the working frequency of the CRM mode is prevented from being too high.
3. The supplemental strategy can avoid operating below the lowest operating frequency, noise identifiable by the human ear, and large current ripple.
4. The complementary strategy can avoid switching loss and EMI interference caused by non-valley opening.
5. The supplement strategy can automatically identify the required maximum number of the valleys and lock the valleys before the lowest frequency, thereby being convenient for engineers to design and realizing the combination of efficiency optimization and THD optimization in the whole working range.
In order to implement the method for controlling a switching circuit provided by the foregoing embodiment, the embodiment of the present application provides a switching circuit control chip IC, which is adapted to control a switching circuit, where the switching circuit includes at least an inductor and a switching tube capable of controlling the inductor to perform excitation, and the switching circuit includes at least an nth working phase, an (n+1) th working phase … … (n+m) th working phase; in the N working stage, the switching tube is opened … … at the Nth valley bottom and in the (N+M) working stage, the switching tube is opened at the (N+M) valley bottom. As shown in fig. 12, the switching circuit control chip IC includes at least an adaptive valley bottom generation unit 11 and an adaptive valley bottom control unit 12;
the self-adaptive valley bottom number generating unit 11 is configured to, when a first preset condition group is satisfied, add 1 to N to obtain an open valley bottom number of a next working state, update N with (n+1) until an open valley bottom number (n+m) of an (n+m) th working stage is obtained, and send the open valley bottom number of each working stage to the self-adaptive valley bottom locking control unit;
The self-adaptive valley locking control unit 12 is used for generating a corresponding control signal for controlling the switching tube to be switched on according to the switching valley bottom number calculated by the self-adaptive valley bottom number parameter generating unit; wherein N and M are positive integers.
The technical effects of the switch circuit control chip refer to those of the switch circuit control method, and are not described in detail herein and hereinafter, the two can be cited and referred to each other.
In one embodiment, the control chip further comprises a shaping and adjusting unit 13 for calculating the peak reference current I of the inductor according to the following formula (1) dcm-PK （n），
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n）+T dcmoff （n））/ T dcmzcd （n）；
Wherein I is ref-ac (n) is the inductor current reference average value for the nth operating phase; t (T) dcmzcd (n) is the sum of the times of excitation and demagnetization of the inductor in the nth working phase; the T is dcmoff (n) is the dead time after demagnetization of the inductor in the nth working phase; the nth working stage is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductor current reaches thePeak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is not less than N and not more than (N+M).
In addition, the shaping and adjusting unit can also adjust the reference current peak value Idcm-PK (n) by utilizing the information of the previous switching period, namely, adjust the reference current peak value Idcm-PK (n) of the corresponding working phase in the DCM working mode through a formula (2);
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n-1）+T dcmoff （n-1））/ T dcmzcd (n-1) … formula (2);
wherein I is ref-ac (n) is the inductor current reference average value for the nth stage of operation; t (T) dcmzcd (n) is the sum of the times of excitation and demagnetization of the inductor in the nth working phase; the T is dcmoff (n) is the dead time after demagnetization of the inductor in the nth working phase; the nth working stage is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductance current reaches the peak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is less than or equal to (N-1) and less than or equal to (N+M).
In one embodiment, the adaptive valley bottom generation unit includes an inductor current input port and a comparison module;
the self-adaptive valley bottom number generating unit is preset with an N < th > preset reference value, an (n+1) th preset reference value … … (n+M) th preset reference value; the inductive current input port is used for receiving a reference instantaneous value of the inductive current; the comparison module is used for comparing the reference instantaneous value with each preset reference value; when the reference instantaneous value is sequentially reduced from an Nth preset reference value to an (N+M) th preset reference value, the self-adaptive valley bottom number generation unit sequentially sends an opening valley bottom number N, (N+1) … … (N+M) to the self-adaptive valley bottom locking control unit; when the (N+M) th preset reference value of the reference instantaneous value is sequentially increased to the N th preset reference value, the self-adaptive valley bottom generating unit sequentially sends the opening Gu Deshu (N+M) … … (N+1) and N to the self-adaptive valley bottom locking control unit; the N working stage, the (N+1) working stage … … and the (N+M) working stage are positioned in the same power frequency period;
In another embodiment, the adaptive valley bottom generating unit presets an nth preset peak value, an (n+1) th preset peak value … … (n+m) th preset peak value; the inductance current input port is used for receiving a reference current peak value of the inductance; the comparison module is used for comparing the reference current peak value with each preset peak value; when the reference current peak value is reduced from an Nth preset peak value to an (N+M) th preset peak value in sequence, the self-adaptive valley bottom number generation unit sequentially sends an opening valley bottom number N, (N+1) … … (N+M) to the self-adaptive valley bottom locking control unit; when the reference current peak value is increased from the (N+M) th preset peak value to the (N) th preset peak value in sequence, the self-adaptive valley bottom generating unit sequentially sends the opening Gu Deshu (N+M), … …, (N+1) and N to the self-adaptive valley bottom control unit; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in different power frequency periods.
Referring to fig. 13, in one embodiment, the adaptive valley count generating unit 11 is preset with the switching step adjustment factors a and step, and the adaptive valley count generating unit 11 is also preset with the reference signal threshold I ref_set ，I ref_set A mode switching threshold value for switching the switching circuit from the CCM operation mode to the CRM operation mode or a mode switching threshold value for switching the switching circuit from the CRM operation mode to the DCM operation mode; the self-adaptive valley parameter generating unit 11 comprises an inductance current input port, a calculating module and a judging module;
an inductor current input port is used for receiving a reference value representing the inductor current, such as a reference instantaneous value I of the inductor current ref_ac_trans And/or inductor current reference peak value I ref_ac_pk 。
The calculation module is used for calculating a current reference threshold I switched from the nth valley bottom to the (n+1) th valley bottom ref_valley (n~ n+1)，I ref_valley (n~ n+1)=I ref_set /（A+n×step）；
The judging module is used for judging the reference of the inductance currentWhether or not the value is reduced to said I ref_valley (n-n+1); if yes, adding 1 to n to obtain the open valley bottom number of the (n+1) th working stage. Further, N is updated with n+1 until switching from the nth operating phase to the (n+m) th operating phase.
In addition, the judging module can also be used for judging whether the reference value of the inductance current is increased to I ref_valley (n-1); if yes, subtracting 1 from n to obtain the open valley bottom number of the (n-1) th working stage. Further, N is updated with (N-1) until switching from the (n+m) th working phase to the nth working phase.
Further, as shown in fig. 13, the switching circuit control chip IC includes a zero-crossing detection port; the self-adaptive lock valley bottom control unit 12 is electrically connected with a zero-crossing detection port, and receives a zero-crossing signal Vzcd of the inductance current through the zero-crossing detection port. In order to realize control, the adaptive valley lock control unit 12 is electrically connected with the zero crossing detection port, so as to find the moment when the turn-on control signal of the switching tube needs to be generated according to the valley number sent by the adaptive valley parameter generating unit 11.
In one embodiment, the adaptive valley parameter generating unit 11 includes a timing module and a counting module;
the timing module is used for timing the time between zero crossing signals of two adjacent inductive currents to obtain resonance time Tr; increasing the increment time Td on the basis of the resonance time Tr to obtain a first time length Trto; wherein the zero crossing signal characterizes the valley bottom;
when the zero-crossing detection circuit detects a zero-crossing signal, a timer cnt_T0 is utilized to count time, and if the zero-crossing detection circuit detects the zero-crossing signal during the counting time, the counting time is cleared; if the zero crossing signal is not detected and the timing time length reaches the first time length Trto, judging that the time is the valley time, and equating the first time length Trto to two adjacent fixed resonance time lengths; the valley bottom is then obtained by timing the first time period Trto.
And the counting module is used for calculating Gu Deshu at least according to the zero crossing signal and the first time length Trto until Gu Deshu reaches the valley bottom for determining that the switching tube is opened.
Further, in one embodiment, the adaptive valley bottom generating unit 11 may further be configured to include a maximum valley bottom determining module; the maximum valley bottom number determining module presets a valley bottom configuration initial value N valley_max The method comprises the steps of carrying out a first treatment on the surface of the The maximum valley bottom number determining module is used for:
detecting the switching frequency of the switching circuit in 1 or more power frequency half waves;
if the frequency of the switching frequency is smaller than the preset limiting frequency (such as 35 kHz) and is larger than the preset value N fsw_th_H In the next power frequency period, the maximum valley bottom number is set to be (N) valley_max -1) and using (N) valley_max -1) updating N valley_max The method comprises the steps of carrying out a first treatment on the surface of the If the number of times that the switching frequency is smaller than the preset limiting frequency (such as 35 kHz) is smaller than the preset value N fsw_th_L In the next power frequency period, the maximum valley bottom number is set to be (N) valley_max +1), and using (N) valley_max +1) updating N valley_max The method comprises the steps of carrying out a first treatment on the surface of the (N+M) is less than or equal to N valley_max . That is, when the switching circuit works, the maximum number of the bottoms calculated according to the first/second preset condition group is less than or equal to the number N of the bottoms determined by the maximum number of the bottoms determining module valley_max 。
Further, in one embodiment, the switching tube of the switching circuit is provided with a maximum off time; when the switching tube is determined to be on, the valley bottom is not reached, but the maximum off time is reached, the self-adaptive valley bottom locking control unit generates a control signal for controlling the switching tube to be on.
Fig. 13 shows a control chip of a switching circuit including an adaptive valley bottom control function, the switching circuit control chip including an adaptive valley bottom generation unit 11, an adaptive valley bottom control unit 12, a shaping condition unit 13, a reference current generation unit 14, a pattern control unit 15, a Ton signal control unit 16, and a CCM-Toff control unit 17; the control manners of the reference current generating unit 14, the mode control unit 15, the Ton signal control unit 16, and the CCM-Toff control unit 17 are referred to the prior art.
Reference current sampling unitA unit 14 for generating an inductor current reference value based on the input voltage sample Vin and the output voltage sample Vo of the switching circuit; the inductor current reference value comprises an inductor current reference average value I ref-ac Reference instantaneous value of inductor current (I ref_ac_trans ) And/or the reference current peak (I) ref_ac_pk ）；
A mode control unit 15, configured to determine an operation mode of the switching circuit according to the inductor current reference value generated by the reference current sampling unit 14;
The Ton signal control unit 16 is configured to control the inductance reference current (i.e. inductance reference current I in DCM generated by the shaping and adjusting unit) according to the determined operation mode and the inductance reference current in each operation mode ref—DCM And a peak reference current I in CRM/CCM operation mode generated by the reference current sampling unit 14 ref—CCM /I ref—CRM ) And the inductor current sampling signal Vcs generates a control signal for controlling the switching tube to be turned off. The inductor current sampling signal can be obtained by directly sampling the inductor current, and also can be obtained by sampling the switching tube circuit.
The CCM-Toff control unit 17 is configured to generate a control signal for controlling the switching tube to be turned off according to an operation mode (CCM operation mode), an input voltage sampling value, an output voltage sampling value, and a switching period Ts.
The self-adaptive valley bottom generating unit 11 is used for generating a turn-on Gu Deshu; the adaptive valley lock control unit 12 is configured to generate a control signal for switching off the switching tube in CRM and/or DCM operation mode at least according to the Gu Deshu, zero crossing signal of the inductor current. That is, the shaping and adjusting unit 13, the adaptive valley count generating unit 11 and the adaptive valley count control unit 12 are configured to perform switching-off control of the switching tube in CRM and DCM operation modes. In fig. 13, the adaptive valley bottom number generating unit implements the valley bottom number control rule of fig. 8, and the shaping and adjusting unit 13 implements I ref—DCM The signal varies with the valley bottom. The adaptive valley bottom generation unit 11 and the adaptive valley bottom control unit 12 realize the control strategy of fig. 4 to 11 and the signal control of Toff.
Characterization inputs may also be utilized in the present applicationReference current (I) into average current ref_ac ) Instantaneous value (I) ref_ac_trans ) And controlling the CCM/CRM/DCM combination to work in a power frequency period. The three modes of operation are based on the instantaneous value (I ref_ac_trans ) Size is freely switched; peak values (I) ref_ac_pk ) And controlling one working mode of CCM, CRM and DCM only in one power frequency period. Or the CCM/CRM/DCM three working modes comprise the situation of combination of CCM, CRM/DCM and DCM in one power frequency period.
The switch circuit control chip has at least one or more of the following advantages:
1. the characteristics of high efficiency of multi-mode operation are maintained, and meanwhile, under the operation of CRM/DCM, the valley opening is ensured to be changed according to a specified rule, and the average value of the inductance current is ensured not to vibrate and distort due to the jump of the inductance current.
2. The valley bottom adjustment curve can be configured in a self-adaptive mode, so that the working frequency of the CRM mode is prevented from being too high.
3. The supplemental strategy can avoid operating below the lowest operating frequency, noise identifiable by the human ear, and large current ripple.
4. The complementary strategy can avoid switching loss and EMI interference caused by non-valley opening.
5. The supplement strategy can automatically identify the required maximum number of the valleys and lock the valleys before the lowest frequency, thereby being convenient for engineers to design and realizing the combination of efficiency optimization and THD optimization in the whole working range.
Based on the above-mentioned switching circuit control method and control chip, the embodiment of the present application further provides a switching circuit, which is shown in fig. 1 and 14, and includes a switching unit 20, an output voltage sampling unit 22, an input voltage sampling unit 21, a current sampling unit 23, an inductance current zero-crossing sampling unit 24, and the above-mentioned switching circuit control chip IC; the switching unit may be a Flyback converter, a BOOST converter (as shown in fig. 1), or a single-phase totem pole bridgeless BOOST PFC converter (as shown in fig. 14); the switch circuit control chip IC is used for controlling the switch tubes in the switch unit 20, so that the switch circuit has better performance.
The output voltage sampling unit 22 is electrically connected with the output end of the switch unit 20 and samples an output voltage sampling signal Vo; the input voltage sampling unit 21 is electrically connected with the input end of the switch unit 20 and samples an input voltage sampling signal Vin; the output voltage sampling unit 22 and the input voltage sampling unit 21 are also electrically connected with the reference current generating unit 14 of the switching circuit control chip IC; the current sampling unit 23 is electrically connected with the switch unit 23, and samples the inductance current of the switch unit 20 to obtain an inductance current sampling signal Vcs; the inductor current zero-crossing sampling unit 24 is electrically connected with the switching unit 20, and is used for acquiring an inductor current zero-crossing signal Vzcd of the switching unit 20, wherein the signal is used for representing a resonant valley; the current sampling unit 23 is electrically connected with the Ton signal control unit 16 of the switch circuit control chip IC; the inductive current zero-crossing sampling unit 24 is electrically connected with the self-adaptive lock valley bottom control unit 12 of the switch circuit control chip IC; the switch circuit control chip IC is at least used for controlling the switch unit to work according to the output voltage sampling signal Vo, the input voltage sampling signal Vin, the inductance current sampling signal Vcs and the inductance current zero crossing signal Vzcd. The specific control manner is described with reference to the foregoing embodiments of the switch circuit control method and the switch circuit control chip, and will not be described herein.
The switching circuit control method and the switching circuit control chip provided by the embodiment of the application are not only suitable for the traditional single-phase BOOST PFC converter, but also suitable for the single-phase totem-pole bridgeless BOOST PFC converter. As shown in FIG. 14, the single-phase totem-pole bridgeless BOOST PFC converter has slightly different requirements on a control chip from the traditional BOOST PFC converter (shown in FIG. 1), and because of different reference grounds, the output of the control chip is different from the output of the VGda, and a Vdgb needs to be generated, a dead time is needed to be inserted between the VGdb and the VGda to ensure the working safety, and the VGda and the VGdb need to exchange the master-slave relationship in the positive half cycle and the negative half cycle of the power frequency period.
The foregoing disclosure is directed to the preferred embodiment of the present application and is not intended to limit the scope of the claims, but rather to cover any and all modifications, equivalents, alternatives, and improvements within the spirit and principles of the present application.

Claims (18)

1. A control method of a switching circuit, for controlling the switching circuit, the switching circuit at least comprises an inductor and a switching tube capable of controlling the inductor to excite, characterized in that the switching circuit at least comprises an nth working stage, an (n+1) th working stage … … (n+m) th working stage; in the nth working stage, the switching tube is opened at the nth valley bottom; in the (n+1) th working stage, the switching tube is turned on … … at the (n+1) th valley bottom, and in the (n+m) th working stage, the switching tube is turned on at the (n+m) th valley bottom; when a first preset condition group is met, the switching circuit is sequentially switched from the N-th working stage, the (n+1) -th working stage … … to the (n+M) -th working stage; wherein N and M are positive integers; the first preset condition group characterizes that the reference current of the inductor gradually decreases.
2. The method of claim 1, wherein the peak reference current I of the inductor dcm-PK (n) is calculated according to formula (1) or (2):
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n）+T dcmoff （n））/ T dcmzcd (n) … formula (1); wherein I is ref-ac (n) is the inductor current reference average value for the nth stage of operation; t (T) dcmzcd (n) is the sum of the times of excitation and demagnetization of the inductor in the nth working phase; the T is dcmoff (n) is the dead time after demagnetization of the inductor in the nth working phase; in the nth working stage, the switching tube is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductance current reaches the peak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is not less than N and not more than (N+M);
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n-1）+T dcmoff （n-1））/ T dcmzcd (n-1) … formula (2); wherein I is ref-ac (n) is the inductor current reference average value for the nth stage of operation; t (T) dcmzcd (n) is the sum of the times of excitation and demagnetization of the inductor in the nth working phase; the T is dcmoff (n) is the dead time after demagnetization of the inductor in the nth working phase; in the nth working stage, the switching tube is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductance current reaches the peak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is less than or equal to (N-1) and less than or equal to (N+M).
3. The method according to claim 2, wherein the first preset condition group includes that a reference instantaneous value of the inductor current is sequentially reduced from an nth preset reference value to an (n+m) th preset reference value; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in the same power frequency period.
4. The method according to claim 2, wherein the first preset condition group includes that a reference current peak value of the inductor current is sequentially reduced from an nth preset peak value to an (n+m) th preset peak value; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in different power frequency periods.
5. The method according to claim 2, wherein the first predetermined condition group is that a reference value characterizing the inductor current is reduced to I ref_valley (n~ n+1)；
Wherein I is ref_valley (n~ n+1)=I ref_set /（A+n×step），
Wherein I is ac_valley (n-n+1) refers to a current reference threshold that switches from the nth valley to the (n+1) th valley; a and step are switching step adjustment factors, step is determined based on efficiency A set of values, a being a constant; i ref_set A mode switching threshold for switching the switching circuit from CCM operation mode to CRM operation mode or a mode switching threshold for switching the switching circuit from CRM operation mode to DCM operation mode.
6. The method according to any one of claims 1 to 5, wherein the valley is obtained by detecting a zero-crossing signal by a zero-crossing detection circuit;
if the zero-crossing detection circuit cannot detect and obtain a zero-crossing signal along with the reduction of the resonance amplitude of the voltage between the drain electrode and the source electrode of the switching tube, the valley bottom is obtained through the following steps:
timing the time between two adjacent valley bottoms detected by the zero-crossing detection circuit to obtain resonance time;
increasing the increment time on the basis of the resonance time to obtain a first time length;
when the zero-crossing detection circuit detects a zero-crossing signal, a timer cnt_T0 is utilized to count time, and if the zero-crossing detection circuit detects the zero-crossing signal during the counting time, the counting time is cleared; if the zero crossing signal is not detected but the timing time length reaches the first time length, judging that the time is the valley bottom time, and equivalent the first time length to the resonance time length of two adjacent valley bottoms;
Gu Deshu is calculated at least from the zero crossing signal and the first time period until Gu Deshu reaches a valley bottom which determines that the switching tube is open.
7. The method according to any one of claims 1 to 5, wherein the switching circuit operates in DCM; and when the valley bottom which is determined to be on by the switching tube is not reached, but the maximum off time is reached, controlling the switching tube to be on.
8. The switching circuit control method according to any one of claims 1 to 5, characterized by further comprising the step of:
presetting a valley bottom configuration initial value N valley_max ；
Detecting the switching frequency of the switching circuit in 1 or more power frequency half waves;
if the frequency of the switching frequency smaller than the preset limiting frequency is larger than the preset value N fsw_th_H In the next power frequency period, the maximum valley bottom number is set to be (N) valley_max -1) and using (N) valley_max -1) updating N valley_max ；
If the frequency of the switching frequency is smaller than the preset limiting frequency is smaller than the preset value N fsw_th_L In the next power frequency period, the maximum valley bottom number is set to be (N) valley_max +1), and using (N) valley_max +1) updating N valley_max ；
(N+M) is less than or equal to N valley_max 。
9. The method according to claim 1, wherein when a second preset condition group is satisfied, the switching circuits are sequentially switched from an (n+m) -th operation stage … … to an N-th operation stage; the second preset condition group represents the reference current of the inductor to be gradually increased;
The second preset condition group comprises that the instantaneous reference value of the inductance current is sequentially increased to an Nth preset reference value from an (N+M) th preset reference value … …; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in the same power frequency period;
or alternatively, the process may be performed,
the second preset condition group comprises that the reference current peak value of the inductance current is sequentially increased from an (N+M) th preset peak value … … to an Nth preset peak value; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in different power frequency periods;
or alternatively, the process may be performed,
the second preset condition group comprises that the reference value of the inductance current is increased to I ref_valley (n~n-1)=I ref_set /[A+(n-1）×Step]，I ac_valley (n-1) refers to the current switched from the nth valley to the (n-1) th valleyA reference threshold; wherein I is ac_valley (n-1) refers to a current reference threshold that switches from the nth valley to the (n-1) th valley; a and step are switching step adjustment factors, step is determining a set of values according to efficiency, and A is a constant; i ref_set A mode switching threshold for switching the switching circuit from CCM operation mode to CM operation mode or a mode switching threshold for switching the switching circuit from CRM operation mode to DCM operation mode.
10. A switch circuit control chip, which is suitable for controlling a switch circuit, wherein the switch circuit at least comprises an inductor and a switch tube capable of controlling the inductor to be excited, and is characterized in that the switch circuit at least comprises an N-th working stage, an (n+1) -th working stage … … and an (n+M) -th working stage; in the nth working stage, the switching tube is opened at the nth valley bottom; in the (n+1) th working stage, the switching tube is turned on … … at the (n+1) th valley bottom, and in the (n+m) th working stage, the switching tube is turned on at the (n+m) th valley bottom; the switch circuit control chip at least comprises an adaptive valley bottom number generating unit and an adaptive valley bottom locking control unit;
the self-adaptive valley bottom number generating unit is used for adding 1 to N to obtain an open valley bottom number of the next working state when a first preset condition group is met, updating N by using (N+1) until the open valley bottom number (N+M) of the (N+M) th working stage is obtained, and sending the open valley bottom number of each working stage to the self-adaptive valley bottom locking control unit; the first preset condition group represents that the reference current of the inductor gradually decreases;
the self-adaptive valley locking control unit is used for generating a corresponding control signal for controlling the switching tube to be switched on according to the switching valley bottom number calculated by the self-adaptive valley bottom number parameter generation unit; wherein N and M are positive integers.
11. The switching circuit control chip of claim 10, further comprising a shaping adjustment unit for adjusting the shaping adjustment unit according to the following formula(1) Or (2) calculating the peak reference current I of the inductor dcm-PK （n），
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n）+T dcmoff （n））/ T dcmzcd (n) … formula (1); wherein I is ref-ac (n) is the inductor current reference average value for the nth operating phase; t (T) dcmzcd (n) is the sum of the times of excitation and demagnetization of the inductor in the nth working phase; the T is dcmoff (n) is the dead time after demagnetization of the inductor in the nth working phase; in the nth working stage, the switching tube is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductance current reaches the peak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is not less than N and not more than (N+M);
I dcm-PK （n）=2*I ref-ac （n）*（T dcmzcd （n-1）+T dcmoff （n-1））/T dcmzcd (n-1) … formula (2); wherein I is ref-ac (n) is the inductor current reference average value for the nth stage of operation; t (T) dcmzcd (n) is the sum of the times of excitation and demagnetization of the inductor in the nth working phase; the T is dcmoff (n) is the dead time after demagnetization of the inductor in the nth working phase; in the nth working stage, the switching tube is opened at the nth valley, and the dead time is (n-1) resonance period; when the inductance current reaches the peak reference current I dcm-PK (n) when controlling the switch tube to be turned off; wherein N is a positive integer and N is less than or equal to (N-1) and less than or equal to (N+M).
12. The switching-circuit control chip of claim 11, wherein the adaptive valley-count generation unit includes an inductor current input port and a comparison module;
the self-adaptive valley bottom number generating unit is preset with an N < th > preset reference value, an (N+1) th preset reference value … … (N+M) th preset reference value; the inductive current input port is used for receiving a reference instantaneous value of the inductive current; the comparison module is used for comparing the reference instantaneous value with each preset reference value; when the reference instantaneous value is sequentially reduced to an (N+M) th preset reference value from an (N+1) th preset reference value and an (N+1) th preset reference value … …, the self-adaptive valley bottom number generating unit sequentially sends an opening valley bottom number N, (N+1) … … (N+M) to the self-adaptive valley bottom control unit; when the (N+M) th preset reference value of the reference instantaneous value is sequentially increased to the N th preset reference value, the self-adaptive valley bottom generating unit sequentially sends the opening Gu Deshu (N+M) … … (N+1) and N to the self-adaptive valley bottom locking control unit; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in the same power frequency period;
Or alternatively, the process may be performed,
the self-adaptive valley bottom number generating unit is preset with an N < th > preset peak value, an (N+1) th preset peak value … … (N+M) th preset peak value; the inductance current input port is used for receiving a reference current peak value of the inductance; the comparison module is used for comparing the reference current peak value with each preset peak value; when the reference current peak value is reduced from an Nth preset peak value to an (N+M) th preset peak value in sequence, the self-adaptive valley bottom number generation unit sequentially sends an opening valley bottom number N, (N+1) … … (N+M) to the self-adaptive valley bottom locking control unit; when the reference current peak value is increased from the (n+m) th preset peak value … … to the (n+1) th preset peak value in turn, the self-adaptive valley bottom number generating unit sequentially sends the open Gu Deshu (n+m) … … (n+1) and N to the self-adaptive valley bottom control unit; the N working stage and the (N+1) working stage … … and the (N+M) working stage are positioned in different power frequency periods.
13. The switch circuit control chip of claim 11, wherein the adaptive valley bottom generation unit is pre-configured with switching step adjustment factors a and step, and further pre-configured with a reference signal threshold I ref_set ，I ref_set Switching the switching circuit from CCM operation mode to CRM operationA mode switching threshold of a mode or a mode switching threshold of the switching circuit from a CRM operation mode to a DCM operation mode; the self-adaptive valley parameter generating unit comprises an inductance current input port, a calculating module and a judging module;
the inductor current input port is used for receiving a reference value representing the inductor current;
the calculation module is used for calculating a current reference threshold I switched from the nth valley bottom to the (n+1) th valley bottom ref_valley (n~ n+1)，I ref_valley (n~ n+1)=I ref_set /（A+n×step）；
The judging module is used for judging whether the reference value of the inductance current is reduced to the I ref_valley (n-n+1); if yes, adding 1 to n to obtain the open valley bottom number of the (n+1) th working stage; the judging module is also used for judging whether the reference value of the inductance current is increased to I ref_valley (n-1); if yes, subtracting 1 from n to obtain the open valley bottom number of the (n-1) th working stage.
14. The switching-circuit control chip according to any one of claims 10 to 13, wherein the switching-circuit control chip includes a zero-crossing detection port; the self-adaptive lock valley bottom control unit is electrically connected with the zero-crossing detection port, and receives a zero-crossing signal of the inductance current through the zero-crossing detection port;
The self-adaptive valley locking control unit comprises a timing module and a counting module;
the timing module is used for timing the time between zero crossing signals of two adjacent inductive currents to obtain resonance time; increasing the increment time on the basis of the resonance time to obtain a first time length; wherein the zero crossing signal characterizes the valley bottom;
when the zero-crossing detection circuit detects a zero-crossing signal, a timer cnt_T0 is utilized to count time, and if the zero-crossing detection circuit detects the zero-crossing signal during the counting time, the counting time is cleared; if the zero crossing signal is not detected but the timing time length reaches the first time length, judging that the time is the valley bottom time, and equivalent the first time length to the resonance time length of two adjacent valley bottoms;
the counting module is used for calculating Gu Deshu at least according to the zero crossing signal and the first time length until Gu Deshu reaches the valley bottom which determines that the switching tube is opened.
15. The switching-circuit control chip according to any one of claims 10 to 13, wherein the adaptive valley bottom generation unit further includes a maximum valley bottom determination module; the maximum valley bottom number determining module presets a valley bottom configuration initial value N valley_max The method comprises the steps of carrying out a first treatment on the surface of the The maximum valley bottom number determining module is used for:
detecting the switching frequency of the switching circuit in 1 or more power frequency half waves;
if the frequency of the switching frequency smaller than the preset limiting frequency is larger than the preset value N fsw_th_H In the next power frequency period, the maximum valley bottom number is set to be (N) valley_max -1) and using (N) valley_max -1) updating N valley_max ；
If the frequency of the switching frequency is smaller than the preset limiting frequency is smaller than the preset value N fsw_th_L In the next power frequency period, the maximum valley bottom number is set to be (N) valley_max +1), and using (N) valley_max +1) updating N valley_max ；
(N+M) is less than or equal to N valley_max 。
16. The switching circuit control chip according to any one of claims 10 to 13, wherein the switching circuit has a maximum off time of the switching tube; when the switching tube is determined to be on, the valley bottom is not reached, but the maximum off time is reached, the self-adaptive valley bottom locking control unit generates a control signal for controlling the switching tube to be on.
17. The switching circuit control chip according to any one of claims 11 to 13, further comprising a reference current generation unit, a mode control unit, a Ton signal control unit, and a CCM-Toff control unit;
The reference current sampling unit is used for generating an inductance current reference value according to an input voltage sampling value and an output voltage sampling value of the switching circuit;
the mode control unit is used for determining the working mode of the switching circuit according to the inductance current reference value;
the Ton signal control unit is used for generating a control signal for controlling the switching tube to be switched off according to the working modes, the inductance reference current and the inductance current sampling signal in each working mode;
the CCM-Toff control unit is used for generating a control signal for controlling the switching tube to be switched off according to the working mode, the input voltage sampling value, the output voltage sampling value and the switching period;
the self-adaptive valley bottom number generating unit is used for generating a turn-on Gu Deshu; the self-adaptive lock valley bottom control unit is used for generating a control signal for switching off a switching tube in a CRM and/or DCM working mode at least according to Gu Deshu and zero crossing signals of the inductance current.
18. A switching circuit, characterized by comprising a switching unit, an output voltage sampling unit, an input voltage sampling unit, a current sampling unit, an inductor current zero crossing sampling unit and a switching circuit control chip according to any one of claims 10-17; the output voltage sampling unit is electrically connected with the output end of the switch unit and is used for sampling an output voltage sampling signal; the input voltage sampling unit is electrically connected with the input end of the switch unit and is used for sampling an input voltage sampling signal; the output voltage sampling unit and the input voltage sampling unit are also electrically connected with a reference current generating unit of the switch circuit control chip; the current sampling unit is electrically connected with the switch unit and is used for sampling an inductance current sampling signal of the switch unit; the inductance current zero-crossing sampling unit is electrically connected with the switching unit and is used for acquiring an inductance current zero-crossing signal of the inductance of the switching unit; the current sampling unit is electrically connected with the Ton signal control unit of the switch circuit control chip; the inductance current zero-crossing sampling unit is electrically connected with the self-adaptive valley locking control unit of the switch circuit control chip; the switch circuit control chip is at least used for controlling the switch unit to work according to the output voltage sampling signal, the input voltage sampling signal, the inductance current sampling signal and the inductance current zero crossing signal.
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