CN116387788B - Three-mode composite one-to-four power division network - Google Patents
Three-mode composite one-to-four power division network Download PDFInfo
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- CN116387788B CN116387788B CN202310660182.4A CN202310660182A CN116387788B CN 116387788 B CN116387788 B CN 116387788B CN 202310660182 A CN202310660182 A CN 202310660182A CN 116387788 B CN116387788 B CN 116387788B
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- 239000002131 composite material Substances 0.000 title claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000005540 biological transmission Effects 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 abstract description 6
- 238000013329 compounding Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 7
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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Abstract
The invention belongs to the technical field of microwave devices, and particularly provides a three-mode composite one-to-four power division network which is used for realizing three-mode composite one-to-four power division transmission with low loss characteristics while ensuring that devices are easy to integrate. The invention comprises the following steps: the lower metal layer, the lower dielectric substrate layer, the metal floor layer, the upper dielectric substrate layer and the upper metal layer are sequentially stacked along the z-axis direction, and the upper metal layer, the metal floor layer and the lower metal layer are connected through a metal short-circuit post to jointly form a composite waveguide transmission line structure; a gap is formed on the metal floor of the composite waveguide transmission line structure to enable the metal floor to have standard TE 10 Mode, folded in-phase TE 10 Mode and folded inverted TE 10 Mode three transmission modes, good mode isolation is realized, and three-mode compounding is realized; meanwhile, a T-shaped slot is formed at the tail end of the composite waveguide transmission line and a microstrip line is inserted, so that a structure of converting the composite waveguide into a four-way microstrip line is designed, and a one-to-four power division function is realized.
Description
Technical Field
The invention belongs to the technical field of microwave devices, and particularly provides a three-mode composite one-to-four power division network.
Background
The power divider is used as one of important multiport devices, and has the main functions of dividing one path of input signal power into two paths or multiple paths of in-phase, anti-phase or quadrature signal output according to a specific proportion; the device is used as one of important microwave millimeter wave devices and is widely applied to various parts of a wireless transceiver system. For example, in a phased array radar system, a power divider is used as a feed system of an array antenna, and the same feed source can be divided into multiple paths of output signals to respectively provide excitation for different antenna radiating units; in a high-power transmitting system, a power divider is usually used twice, an input signal is divided into multiple paths through the power divider and then amplified respectively, and then the multiple paths of signals are overlapped by an inverse power divider to be synthesized into one path of high-power signal for output; in addition, the power divider is commonly used in devices such as mixers, phase shifters, reflectometers, and the like.
As an important passive device in a wireless system, the performance of a power divider has a great influence on the performance of the whole system. In order to adapt to the rapid development of wireless communication industries in the military and civil fields such as radar, navigation, satellite communication, electronic countermeasure, 5G and the like, a multimode multichannel power divider becomes the key point of extensive research; the multimode multichannel power divider not only can reduce the use quantity of the power divider so as to reduce the space and the cost, but also can realize good port isolation; therefore, multimode power splitters have important research significance.
Disclosure of Invention
The invention aims to provide a three-mode composite one-to-four power division network, which utilizes a simple substrate integrated waveguide (Substrate integrated waveguide, SIW) structure to realize three-mode composite one-to-four power division transmission with low loss characteristics while ensuring that devices are easy to integrate.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
a three-mode compounded one-to-four power division network comprising: a lower metal layer, a lower dielectric substrate layer 7, a metal substrate layer 6, an upper dielectric substrate layer 5 and an upper metal layer which are sequentially stacked along the z-axis direction; the method is characterized in that:
the upper metal layer is in a symmetrical structure about a central line in the y-axis direction of the upper surface of the upper medium substrate layer, the lower metal layer is in a symmetrical structure about a central line in the y-axis direction of the lower surface of the lower medium substrate layer, the upper metal layer is composed of a first upper microstrip line 1, a second upper microstrip line 2 and a composite waveguide upper metal layer 3, and the lower metal layer is composed of a first lower microstrip line 8, a second lower microstrip line 9 and a composite waveguide lower metal layer 10;
the upper metal layer 3, the metal floor layer 6 and the lower metal layer 10 of the composite waveguide are connected through the metal short-circuit column 4, and the metal short-circuit column 4 penetrates through the upper dielectric substrate layer 5 and the lower dielectric substrate layer 7 to jointly form a composite waveguide transmission line structure;
the initial end of the composite waveguide transmission line is used as an input port P0; the composite waveguide upper metal layer 3 and the composite waveguide lower metal layer 10 at the tail end of the composite waveguide transmission line are respectively and symmetrically provided with two T-shaped gaps along the central line in the y-axis direction, the first upper microstrip line 1 and the second upper microstrip line 2 are respectively connected to two sides of the composite waveguide upper metal layer 3 through the T-shaped gaps, the first lower microstrip line 8 and the second lower microstrip line 9 are respectively connected to two sides of the composite waveguide lower metal layer 10 through the T-shaped gaps, and the first upper microstrip line 1, the second upper microstrip line 2, the first lower microstrip line 8 and the second lower microstrip line 9 are respectively in stepped fold line structures; the first upper layer microstrip line 1, the second upper layer microstrip line 2, the first lower layer microstrip line 8 and the second lower layer microstrip line 9 are sequentially connected with output ports P1-P4, and the output ports on the same side are staggered;
the metal floor layer 6 is provided with a rectangular gap along the y-axis direction and is positioned on the central line of the composite waveguide transmission line structure.
Further, the composite waveguide transmission line structure has three transmission modes, namely standard TE 10 Mode, folded in-phase TE 10 Mode and folded inverted TE 10 A mode; wherein, standard TE 10 In the mode, the output ports P1 and P2 output in-phase fields, the output ports P3 and P4 output in-phase fields, and the output ports P1 and P3 output anti-phase fields; folded inverted TE 10 In the mode, the output ports P1 and P3 output in-phase fields, the output ports P2 and P4 output in-phase fields, and the output ports P1 and P2 output anti-phase fields; folding in-phase TE 10 In the mode, the output ports P1, P2, P3 and P4 all output in-phase fields.
Further, the lengths of the upper metal layer 3 of the composite waveguide and the lower metal layer 10 of the composite waveguide are l=23.1 mm, and the widths are w=11.2 mm.
Further, the distance between the outer arm of the T-shaped slot in the upper metal layer 3 of the composite waveguide and the lower metal layer 10 of the composite waveguide is d1=1.96 mm, the arm length of the T-shaped slot is b=5.25 mm, the arm depth is a=3.7 mm, and the arm width is s=0.45 mm.
Further, the thicknesses of the upper dielectric substrate layer 5 and the lower dielectric substrate layer 7 are each h=0.508 mm.
Further, the diameter of the metal shorting post 4 is d=0.48 mm, and the distance between adjacent metal shorting posts is d2=0.72 mm.
Further, the rectangular slit of the metal floor layer 6 has a width wm=1 mm and a length lm=15.9 mm.
In terms of working principle:
the invention provides a three-mode composite one-to-four power division network, which is based on a substrate integrated waveguide structure design to obtain a composite waveguide transmission line, when a gap is formed on a metal floor of the composite waveguide transmission line, the composite waveguide transmission line transmits standard TE except 10 In addition to the modes, two transmission modes are added, namely folding in-phase TE 10 Mode and folded inverted TE 10 A mode; since both modes belong to the standard TE 10 The deformation of the mode, therefore, the three transmission modes have similar cut-off frequencies, so that the composite waveguide can transmit three modes with the same frequency at the same time; and because the three modes are mutually orthogonal, good mode isolation can be realized, so that the three modes can work simultaneously, namely three-mode compounding is realized. Further, a gap is formed at the tail end of the composite waveguide transmission line, and a microstrip line is inserted, so that a structure of converting the composite waveguide into a four-way microstrip line is designed, namely, a one-to-four power division effect is realized; the phases of the single-mode output ports (P1, P2, P3 and P4) in different modes are different due to the different field distribution of the three modes: standard TE 10 In mode, P1 and P2 output in-phase fields, P3 and P4 output in-phase fields, but P1, P2 and P3, P4 output anti-phase fields; folding deviceStacked inverted TE 10 In mode, P1 and P3 output in-phase fields, P2 and P4 output in-phase fields, but P1, P3 and P2, P4 output anti-phase fields; folding in-phase TE 10 In mode, P1, P2, P3 and P4 all output in-phase fields.
In summary, the invention has the following beneficial effects: the three-mode composite one-to-four power division network with a simple structure is provided, three modes of transmission can work simultaneously, four output ports can have different output phases, and when the power division network is used for exciting an antenna structure, the antenna radiation performance diversity can be realized.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of a three-mode composite one-quarter power division network in the invention, wherein 1 and 2 are a first upper microstrip line and a second upper microstrip line, 3 is an upper metal layer of a composite waveguide, 4 is a metal short-circuit post, 5 is an upper dielectric substrate layer, 6 is a metal substrate layer, 7 is a lower dielectric substrate layer, 8 and 9 are a first lower microstrip line and a second lower microstrip line, and 10 is a lower metal layer of the composite waveguide; p0 is an input port, and P1 to P4 are output ports.
Fig. 2 is a schematic top view of a three-mode composite one-to-four power division network according to the present invention.
FIG. 3 is a schematic diagram of a three-mode composite one-quarter power distribution network of a metal floor layer according to the present invention.
Fig. 4 is a VSWR plot for the P0 port of the three-mode composite one-quarter-power network of the example.
Fig. 5 is a graph showing transmission coefficients of a three-mode composite one-to-four power division network at a P0 port and the remaining ports in the embodiment.
Fig. 6 is a graph showing the coupling curves between three modes of a one-to-four power division network of a three-mode composite in an embodiment.
FIG. 7 is a diagram of a three-mode composite one-quarter-power network in a standard TE 10 Schematic of the electric field distribution of the mode.
FIG. 8 is a schematic diagram of a three-mode composite one-quarter-power-division network in folded in-phase TE 10 Schematic of the electric field distribution of the mode.
FIG. 9 shows a quarter-power in a three-mode composite in an embodimentSub-network in folded reverse phase TE 10 Schematic of the electric field distribution of the mode.
FIG. 10 is a diagram of a three-mode composite one-quarter-power network in a standard TE in an embodiment 10 And in the mode, S01/S02/S03/S04 is used for transmitting the coefficient phase characteristic diagram.
FIG. 11 is a schematic diagram of a three-mode composite one-quarter-power-division network in folded in-phase TE 10 And in the mode, S01/S02/S03/S04 is used for transmitting the coefficient phase characteristic diagram.
FIG. 12 is a schematic diagram of a three-mode composite one-quarter-power-division network in folded reverse phase TE 10 And in the mode, S01/S02/S03/S04 is used for transmitting the coefficient phase characteristic diagram.
Detailed Description
In order to make the objects, technical solutions and advantageous effects of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and examples.
The present embodiment provides a three-mode composite one-to-four power division network, whose structure is shown in fig. 1 to 3, and includes an input port P0 and output ports P1 to P4, and the specific structure includes: a lower metal layer, a lower dielectric substrate layer 7, a metal substrate layer 6, an upper dielectric substrate layer 5 and an upper metal layer which are sequentially stacked along the z-axis direction (from bottom to top); specifically:
the lower dielectric substrate layer 7 and the metal substrate layer 6 are tightly connected with the upper dielectric substrate layer, and no air gap exists between the upper dielectric substrate layer 5 and the lower dielectric substrate layer 7;
the upper metal layer is arranged on the upper surface of the upper medium substrate layer 5 and is in a symmetrical structure about a central line in the y-axis direction of the upper surface of the upper medium substrate layer, the lower metal layer is arranged on the lower surface of the lower medium substrate layer 7 and is in a symmetrical structure about a central line in the y-axis direction of the lower surface of the lower medium substrate layer, the upper metal layer is composed of a first upper microstrip line 1, a second upper microstrip line 2 and a composite waveguide upper metal layer 3, and the lower metal layer is composed of a first lower microstrip line 8, a second lower microstrip line 9 and a composite waveguide lower metal layer 10; the upper metal layer 3, the metal floor layer 6 and the lower metal layer 10 of the composite waveguide are connected through the metal short-circuit column 4, and the metal short-circuit column 4 traverses the upper dielectric substrate layer 5 and the lower dielectric substrate layer 7 to jointly form a composite waveguide transmission line structure;
the initial end of the composite waveguide transmission line is used as an input port P0; the composite waveguide upper metal layer 3 and the composite waveguide lower metal layer 10 at the tail end of the composite waveguide transmission line are respectively and symmetrically provided with two T-shaped gaps along the central line in the y-axis direction, the first upper microstrip line 1 and the second upper microstrip line 2 are respectively connected to the two sides of the composite waveguide upper metal layer 3 through the T-shaped gaps, namely, the first upper microstrip line 1 and the second upper microstrip line 2 are arranged along the x-axis direction, the first lower microstrip line 8 and the second lower microstrip line 9 are respectively connected to the two sides of the composite waveguide lower metal layer 10 through the T-shaped gaps, namely, the first lower microstrip line 8 and the second lower microstrip line 9 are also arranged along the x-axis direction, and the first upper microstrip line 1 and the second upper microstrip line 2, the first lower microstrip line 8 and the second lower microstrip line 9 are respectively in a stepped fold line structure; the first upper layer microstrip line 1, the second upper layer microstrip line 2, the first lower layer microstrip line 8 and the second lower layer microstrip line 9 are respectively connected with output ports P1-P4, and the output ports on the same side are staggered;
the metal floor layer 6 is provided with a rectangular slot along the y-axis direction and is positioned on the central line of the composite waveguide transmission line structure, and the rectangular slot enables the composite waveguide transmission line structure to transmit three modes, namely TE respectively 10 Mode, folded in-phase TE 10 Mode and folded inverted TE 10 A mode;
the input port P0 is an energy input port, and the output ports P1, P2, P3 and P4 are energy output ports; after entering from the input port P0, energy is transmitted to the rear end T-shaped structure in the composite waveguide transmission line structure, and then is transmitted to the output ports P1, P2, P3 and P4 through the upper microstrip line 1, the upper microstrip line 2, the lower microstrip line 8 and the lower microstrip line 9 respectively to form a one-to-four power division network.
Specifically, in this embodiment, the upper dielectric substrate layer 5 and the lower dielectric substrate layer 7 are both made of Taconic RF-35 board with a dielectric constant of 3.5, and the thickness h=0.508 mm, the length is 30mm, and the width is 20mm; the lengths of the upper metal layer 3 of the composite waveguide and the lower metal layer 10 of the composite waveguide are L=23.1 mm, and the widths are W=11.2 mm; the distance d1=1.96 mm between the outer arms of the T-shaped slots on the two sides of the upper metal layer 3 of the composite waveguide and the lower metal layer 10 of the composite waveguide and the middle line, the arm length b=5.25 mm, the arm depth a=3.7 mm and the arm width s=0.45 mm of the T-shaped slots; the diameter d=0.48 mm of the metal shorting post 4, and the distance d2=0.72 mm between two adjacent metal shorting posts; the rectangular gap width wm=1 mm and the length lm=15.9 mm in the middle of the metal floor layer 6.
Based on the above structural parameters, the three-mode composite one-to-four power division network in this embodiment is subjected to simulation test, and the results are as follows:
as shown in fig. 4, the VSWR curves of the three-mode composite one-to-four power division network in the embodiment under three modes, and the frequency bands with standing wave coefficients smaller than 1.5 in the three transmission modes are between 15.6 GHz and 20.5 GHz, which indicates that the modes have good matching;
as shown in fig. 5, which shows a transmission coefficient curve of the three-mode composite one-quarter power division network in three modes, and as shown in fig. 6, which shows a coupling (isolation) curve of the three modes of the three-mode composite one-quarter power division network in the embodiment, it can be seen that the transmission coefficients of the three-mode one-quarter power division network are all between 6.25 and 6.75, the loss is relatively small, and the four output ports have equal power division characteristics; the isolation between the three modes exceeds 40dB, which indicates that the modes have good isolation characteristics;
fig. 7 to 9 show electric field distribution diagrams of the three-mode composite one-to-four power division network in three modes in this embodiment, and it can be seen that the standard TE 10 The mode has unidirectional electric field in the plane of the port, and the folded in-phase TE 10 The mode has the characteristics of left-right and up-down opposite phase of an electric field in a port plane, and the folded opposite phase TE 10 The mode has the characteristic of up-down opposite phase of an electric field in a port plane;
as shown in fig. 10 to 12, the phase diagrams of the output ports of the three-mode composite one-to-four power division network in the present embodiment are shown in three modes, and as can be seen from the diagrams, the phase diagrams are in the standard TE 10 In mode, P1 and P2 output in-phase fields, P3 and P4 output in-phase fields, but P1, P2 and P3, P4 output anti-phase fields; folded inverted TE 10 In mode, P1 and P3 output in-phase fields, P2 and P4 output in-phase fields, but P1, P3 and P2, P4 output anti-phase fields; folding at the same timePhase TE 10 In the mode, P1, P2, P3, and P4 all output in-phase fields, without phase differences.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (7)
1. A three-mode compounded one-to-four power division network comprising: a lower metal layer, a lower dielectric substrate layer (7), a metal substrate layer (6), an upper dielectric substrate layer (5) and an upper metal layer which are sequentially stacked along the z-axis direction; the method is characterized in that:
the upper metal layer is in a symmetrical structure about a central line in the y-axis direction of the upper surface of the upper dielectric substrate layer, the lower metal layer is in a symmetrical structure about a central line in the y-axis direction of the lower surface of the lower dielectric substrate layer, the upper metal layer is composed of a first upper microstrip line (1), a second upper microstrip line (2) and a composite waveguide upper metal layer (3), and the lower metal layer is composed of a first lower microstrip line (8), a second lower microstrip line (9) and a composite waveguide lower metal layer (10);
the composite waveguide upper metal layer (3), the metal floor layer (6) and the composite waveguide lower metal layer (10) are connected through the metal short-circuit column (4), and the metal short-circuit column (4) penetrates through the upper dielectric substrate layer (5) and the lower dielectric substrate layer (7) to jointly form a composite waveguide transmission line structure;
the initial end of the composite waveguide transmission line is used as an input port P0; the composite waveguide upper metal layer (3) and the composite waveguide lower metal layer (10) at the tail end of the composite waveguide transmission line are respectively and symmetrically provided with two T-shaped gaps along the central line in the y-axis direction, the first upper microstrip line (1) and the second upper microstrip line (2) are respectively connected to the two sides of the composite waveguide upper metal layer (3) through the T-shaped gaps, the first lower microstrip line (8) and the second lower microstrip line (9) are respectively connected to the two sides of the composite waveguide lower metal layer (10) through the T-shaped gaps, and the first upper microstrip line, the second upper microstrip line, the first lower microstrip line and the second lower microstrip line all adopt stepped broken line structures; the first upper layer microstrip line, the second upper layer microstrip line, the first lower layer microstrip line and the second lower layer microstrip line are sequentially connected with output ports P1-P4, and the output ports on the same side are staggered;
the metal floor layer (6) is provided with a rectangular gap along the y-axis direction and is positioned on the central line of the composite waveguide transmission line.
2. The three-mode composite one-to-four power divider network of claim 1, wherein the composite waveguide transmission line structure has three transmission modes, respectively standard TE 10 Mode, folded in-phase TE 10 Mode and folded inverted TE 10 A mode; wherein, standard TE 10 In the mode, the output ports P1 and P2 output in-phase fields, the output ports P3 and P4 output in-phase fields, and the output ports P1 and P3 output anti-phase fields; folded inverted TE 10 In the mode, the output ports P1 and P3 output in-phase fields, the output ports P2 and P4 output in-phase fields, and the output ports P1 and P2 output anti-phase fields; folding in-phase TE 10 In the mode, the output ports P1, P2, P3 and P4 all output in-phase fields.
3. A three-mode composite quarter-power network according to claim 1, characterized in that the length of the upper metal layer (3) of the composite waveguide and the lower metal layer (10) of the composite waveguide are l=23.1 mm and the width are w=11.2 mm.
4. A three-mode composite one-to-four power division network according to claim 1, characterized in that the distance between the outer arms of the T-slots in the upper (3) and lower (10) metal layers of the composite waveguide is d1=1.96 mm, the arm length of the T-slots is b=5.25 mm, the arm depth is a=3.7 mm, and the arm width is s=0.45 mm.
5. A three-mode composite quarter-power network according to claim 1, characterized in that the thickness of the upper dielectric substrate layer (5) and the lower dielectric substrate layer (7) are each h = 0.508mm.
6. A three-mode composite quarter-power network according to claim 1, characterized in that the diameter of the metal shorting posts (4) is d=0.48 mm and the distance between adjacent metal shorting posts is d2=0.72 mm.
7. A three-mode composite one-quarter power dividing network according to claim 1, characterized in that the rectangular slot width of the metal floor layer (6) is wm=1 mm and the length is lm=15.9 mm.
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