CN116387198A - Cutting and separating method for QFN (quad Flat No-lead) packaged chips - Google Patents
Cutting and separating method for QFN (quad Flat No-lead) packaged chips Download PDFInfo
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- CN116387198A CN116387198A CN202310364858.5A CN202310364858A CN116387198A CN 116387198 A CN116387198 A CN 116387198A CN 202310364858 A CN202310364858 A CN 202310364858A CN 116387198 A CN116387198 A CN 116387198A
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- separating
- qfn package
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- 238000005520 cutting process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000004806 packaging method and process Methods 0.000 claims abstract description 36
- 239000004033 plastic Substances 0.000 claims abstract description 16
- 238000000926 separation method Methods 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004332 silver Substances 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 9
- 229920000742 Cotton Polymers 0.000 claims description 2
- 238000012805 post-processing Methods 0.000 claims 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 11
- 238000000227 grinding Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000011160 research Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000007767 bonding agent Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 241001391944 Commicarpus scandens Species 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Abstract
The invention provides a cutting and separating method of QFN packaging chips, which comprises the following steps: (1) determining the position of a wafer inside the QFN package chip; (2) And separating the plastic package body of the QFN package chip by adopting laser, and finishing cutting and separating of the QFN package chip after post-treatment. The cutting and separating method of the QFN packaging chip is simple to operate, greatly saves the operation time, reduces the operation cost and improves the success rate of cutting and separating; and the use of the reagent is avoided, and the factor that the mobility of the reagent is uncontrollable is eliminated.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging structures, relates to a cutting and separating method of a packaging structure, and particularly relates to a cutting and separating method of a QFN packaging chip.
Background
For example, a Quad Flat No-lead Package (QFN) Package is a new high-end Package form widely used in terminal products such as mobile phones and digital cameras in recent years.
QFN packaging chip is an emerging surface-mounted chip packaging technology with small size and small volume of bonding pads and plastic as sealing materials. The conductive paths between the inner leads and the pads are short, the self inductance and wiring resistance in the package are low, so that excellent electrical performance can be provided, and in addition, excellent heat dissipation performance is provided by the exposed lead frame pads.
In recent years, QFN packages have been developed as portable electronic device packages, and their applications are rapidly growing due to their good electrical and thermal properties, as well as small size and light weight. Along with the continuous acceleration of the miniaturization process of the packaging element, the requirements on the size and the edge processing precision of the QFN packaging chip are more and more strict, and higher requirements on the cutting method and the cutting efficiency of the QFN packaging are also provided.
The requirements on the QFN package cutting quality are as follows: the chip cutting and opening and the chip copper lead galling size are smaller than the specified values. The composite structure of the QFN packaged chip makes it necessary to cut off the inner copper lead frame and the outer resin matrix inclusion simultaneously during cutting, however, because of the excellent ductility of copper materials, the copper leads are easy to generate galling exceeding standard (larger than 1/4 of the pin spacing) during cutting, and the chip is scrapped.
At present, the separation modes of the QFN single products are mainly two, one is to process by adopting a traditional milling machine, and the rate of finished products is low due to poor processing quality of the milling machine, so that the QFN single products are eliminated; the second is punching QFN (punch type QFN), which is to cut and peel QFN by punching through a shearing machine
Because the traditional QFN cutting and separating technology has low processing precision, poor consistency of cutting effect and low production efficiency, a special die like a stamping QFN needs to be developed, and extra die development cost is required to be increased. With the rapid growth of QFN packaging applications, conventional separation techniques are increasingly unable to meet new manufacturing requirements, and new processing methods are urgently needed for replacement.
Currently, the grinding wheel for cutting QFN packaging chips is mainly a resin bond grinding wheel. The resin bonding agent has relatively poor wear resistance, so that the grinding wheel has good self-sharpening property, the excellent cutting capability of the grinding wheel is ensured, meanwhile, the resin bonding agent has certain elasticity, the cutting quality is improved, and the harsh requirements of small chip lead roughening, small cutting notch and the like can be finally met. However, the resin bond abrasive cutoff wheel also has the prominent defects: because the abrasion resistance of the bonding agent is poor, the whole service life of the grinding wheel is short, the cost of a user is increased, and the production efficiency is reduced due to frequent replacement of the grinding wheel; the grinding wheel has low rigidity and strength, and is easy to break due to the fact that the high load caused by high-speed cutting cannot be borne during high-speed cutting, so that the cutting speed of the resin bond grinding wheel is low, and is usually below 40 mm/s.
CN 101870008A discloses a sintered metal-based diamond saw based on saw type cutting QFN package substrate, the saw provided by the patent has the characteristics of high strength, good wear resistance and long service life, but because the self-sharpening property of the grinding wheel is still poor, although the strength of the metal bond grinding wheel is better, the cutting speed is still limited to be below 50 mm/s. Meanwhile, the cutting quality of the metal bond is greatly different from that of the resin bond grinding wheel, and partial high-precision cutting application cannot be met.
In the prior art, the cutting method of the QFN package chip further comprises the following steps: and corroding the QFN package by a reagent.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a cutting and separating method for QFN packaging chips, which eliminates the factor of uncontrollable reagent fluidity, avoids the use of reagents and greatly improves the operation time and success rate.
To achieve the purpose, the invention adopts the following technical scheme:
the invention provides a cutting and separating method of QFN packaging chips, which comprises the following steps:
(1) Determining the position of a wafer inside the QFN package chip;
(2) And separating the plastic package body of the QFN package chip by adopting laser, and finishing cutting and separating of the QFN package chip after post-treatment.
The laser has the performance, and the QFN packaging chip is cut by the laser, so that the operation time can be reduced to a great extent, and the success rate of cutting and separating is improved.
The laser separation method provided by the invention can not damage the chip in the QFN package chip, and is beneficial to the subsequent further performance research of the chip.
The invention is not limited to the starting point and the separation path of the laser separation, as long as the complete separation of the chips in the QFN package chip can be realized.
As a preferred technical solution of the present invention, the method for determining the position in step (1) is as follows: and determining the position of the wafer inside the QFN package chip through the X-RAY.
Preferably, the laser separation in step (2) is performed in a laser machine.
Preferably, the laser energy in the laser separation in the step (2) is 30-40%, for example, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39% or 40%, but not limited to the recited values, and other values not recited in the numerical range are equally applicable.
The energy of the rays in the laser process is 30-40%, and the energy is too high, so that the internal structure of the QFN packaging chip can be damaged, and even the chip can be damaged; the energy is too low, which can prolong the cutting time or lead to insufficient cutting depth, and the cutting and separating of the QFN package chip can not be successfully completed.
Preferably, the depth of the laser beam in the laser separation in the step (2) is 0.5-0.7 mm above the thickness of the metal pins, for example, 0.5mm, 0.55mm, 0.6mm, 0.65mm or 0.7mm, but not limited to the listed values, and other values not listed in the numerical range are equally applicable.
The invention limits the laser depth in the laser process, if the laser depth is too deep, the internal chip or the pin metal can be damaged, and if the laser depth is not enough, repeated laser separation can be carried out, thereby wasting resources.
Preferably, the plastic package body is the joint of the cooling fin and the package body in the QFN package chip.
The plastic package body is positioned on the inner side of the pin metal, the main component of the plastic package body is epoxy resin, and the chemical structure of the plastic package body cannot be damaged by laser cutting, so that chemical substances harmful to an internal chip are generated.
Preferably, the laser separation in step (2) further comprises a pretreatment process for the QFN package chip.
Preferably, the preprocessing process includes sequentially performing calibration base points, confirming the heat sink and laser positions.
The laser position is the position of the plastic package body.
Preferably, the post-treatment of step (2) comprises: adopting a first jig to detach the radiating fins and expose silver paste; and then cleaning silver paste by adopting a second jig.
Preferably, the shape of the first jig is sharp and flat.
Preferably, the first jig comprises metal tweezers.
Preferably, the second jig comprises a cotton swab.
As a preferable technical scheme of the invention, the cutting and separating method of the QFN package chip comprises the following steps:
(a) Determining the position of the wafer inside the QFN package chip through X-RAY;
(b) Placing the QFN packaging chip in a laser machine, and then sequentially calibrating base points, confirming radiating fins and laser positions;
(c) Using 30-40% of energy to perform laser, and performing laser separation on the plastic package body at the joint of the radiating fin and the package body; the depth of the laser is 0.5-0.7 mm larger than the thickness of the metal of the pin;
(d) And disassembling the radiating fin by using the first jig, exposing the silver paste, cleaning the silver paste by using the second jig, and finishing cutting and separating of the QFN packaging chip after post-treatment.
The numerical ranges recited herein include not only the above-listed point values, but also any point values between the above-listed numerical ranges that are not listed, and are limited in space and for the sake of brevity, the present invention is not intended to be exhaustive of the specific point values that the stated ranges include.
Compared with the prior art, the invention has the beneficial effects that:
(1) The cutting and separating method of the QFN packaging chip is simple to operate, greatly saves the operation time, reduces the operation cost and improves the success rate of cutting and separating;
(2) The cutting and separating method of the QFN packaging chip provided by the invention avoids the use of the reagent and eliminates the factor of uncontrollable reagent mobility.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
Example 1
The embodiment provides a cutting and separating method of QFN packaging chips, which comprises the following steps:
(a) Determining the position of the wafer inside the QFN package chip through X-RAY;
(b) Placing the QFN packaging chip in a laser machine, and then sequentially calibrating base points, confirming radiating fins and laser positions;
(c) Performing laser separation on the plastic package body at the joint of the radiating fin and the package body by using 30% of energy; the depth of the laser is 0.5mm more than the thickness of the metal of the pin
(d) And disassembling the radiating fin by using the first jig, exposing the silver paste, cleaning the silver paste by using the second jig, and finishing cutting and separating of the QFN packaging chip after post-treatment.
The separation method provided by the embodiment can completely separate the QFN package and the internal chip, can ensure that the chip is not damaged, and is beneficial to follow-up research on the chip.
Example 2
The embodiment provides a cutting and separating method of QFN packaging chips, which comprises the following steps:
(a) Determining the position of the wafer inside the QFN package chip through X-RAY;
(b) Placing the QFN packaging chip in a laser machine, and then sequentially calibrating base points, confirming radiating fins and laser positions;
(c) Using 40% of energy to perform laser, and performing laser separation on the plastic package body at the joint of the radiating fin and the package body; the depth of the laser is 0.7mm larger than the thickness of the pin metal;
(d) And disassembling the radiating fin by using the first jig, exposing the silver paste, cleaning the silver paste by using the second jig, and finishing cutting and separating of the QFN packaging chip after post-treatment.
The separation method provided by the embodiment can completely separate the QFN package and the internal chip, can ensure that the chip is not damaged, and is beneficial to follow-up research on the chip.
Example 3
The embodiment provides a cutting and separating method of QFN packaging chips, which comprises the following steps:
(a) Determining the position of the wafer inside the QFN package chip through X-RAY;
(b) Placing the QFN packaging chip in a laser machine, and then sequentially calibrating base points, confirming radiating fins and laser positions;
(c) Using 35% of energy to perform laser, and performing laser separation on the plastic package body at the joint of the radiating fin and the package body; the depth of the laser is 0.6mm larger than the thickness of the pin metal;
(d) And disassembling the radiating fin by using the first jig, exposing the silver paste, cleaning the silver paste by using the second jig, and finishing cutting and separating of the QFN packaging chip after post-treatment.
The separation method provided by the embodiment can completely separate the QFN package and the internal chip, can ensure that the chip is not damaged, and is beneficial to follow-up research on the chip.
Example 4
The embodiment provides a cutting and separating method of QFN packaging chips, which comprises the following steps:
(a) Determining the position of the wafer inside the QFN package chip through X-RAY;
(b) Placing the QFN packaging chip in a laser machine, and then sequentially calibrating base points, confirming radiating fins and laser positions;
(c) Performing laser separation on the plastic package body at the joint of the radiating fin and the package body by using 32% of energy; the depth of the laser is 0.55mm larger than the thickness of the pin metal;
(d) And disassembling the radiating fin by using the first jig, exposing the silver paste, cleaning the silver paste by using the second jig, and finishing cutting and separating of the QFN packaging chip after post-treatment.
The separation method provided by the embodiment can completely separate the QFN package and the internal chip, can ensure that the chip is not damaged, and is beneficial to follow-up research on the chip.
Example 5
The present embodiment provides a method for dicing and separating a QFN package chip, which differs from embodiment 1 only in that:
in this embodiment, the laser energy in the step (c) is changed to 20%.
When the separation method provided by the embodiment is adopted, the energy in the laser process is too low, the cutting process of the QFN package cannot be completed at one time, repeated cutting and separation are needed, and chips inside the QFN package are easily damaged.
Example 6
The present embodiment provides a method for dicing and separating a QFN package chip, which differs from embodiment 1 only in that:
in this embodiment, the laser energy in the step (c) is changed to 50%.
When the separation method provided by the embodiment is adopted, the energy in the laser process is too high, and the laser is extremely easy to puncture the QFN packaging shell in the laser process, so that the difficulty in separating the QFN packaging shell from the chip is increased due to the fact that the jig is adopted to detach the radiating fin in the step (d).
Example 7
The present embodiment provides a method for dicing and separating a QFN package chip, which differs from embodiment 1 only in that:
the embodiment changes the depth of the laser in the step (c) to be more than 0.4mm of the thickness of the metal pin.
When the separation method provided by the embodiment is adopted, the laser depth is lower in the laser process, the depth cannot reach the position of the radiating fin, the radiating fin is not convenient to detach by adopting the jig in the step (d), and the difficulty of separating the QFN package shell from the chip is increased.
Example 8
The present embodiment provides a method for dicing and separating a QFN package chip, which differs from embodiment 1 only in that:
the embodiment changes the depth of the laser in the step (c) to be more than 0.8mm of the thickness of the pin metal.
When the separation method provided by the embodiment is adopted, the laser depth is too deep in the laser process, so that the QFN package shell is very easy to break through, the cooling fin is not convenient to detach by adopting the jig in the step (d), and the difficulty of separating the QFN package shell from the chip is increased.
Comparative example 1
This comparative example provides a dicing separation method of QFN package chips, which differs from embodiment 1 only in that:
in the comparative example, laser separation is changed into separation by adopting a grinding wheel, and the specific steps are as follows:
the QFN package chip was cut at a laser position at a rotational speed of 40mm/s using the grinding wheel provided in example 1 of CN 107378802A.
By adopting the method provided by the comparative example, the cutting precision is not easy to control in the separation process, and the internal chip is extremely easy to damage.
Comparative example 2
The comparative example provides a method for cutting and separating QFN package chips, which comprises the following steps:
1) Determining the position of the wafer inside the QFN package chip through X-RAY;
2) Removing a tin layer on the cooling fin of the QFN packaging chip, and exposing the metal copper outside; then tin paper with rectangular holes is paved on the tin paper; compacting the edges around the tinfoil;
the rectangular holes are consistent with the wafer in position;
3) Adopting a reagent to wash and corrode the metal copper in the step 2) until silver paste leaks out;
4) And cleaning the silver paste to expose the wafer.
By adopting the method provided by the comparative example, the reagent has the factor of uncontrollable fluidity, is extremely easy to corrode the wafer, and reduces the success rate.
In summary, the cutting and separating method of the QFN package chip provided by the invention is simple to operate, greatly saves the operation time, reduces the operation cost and improves the success rate of cutting and separating; and the use of the reagent is avoided, and the factor that the mobility of the reagent is uncontrollable is eliminated.
The applicant states that the detailed structural features of the present invention are described by the above embodiments, but the present invention is not limited to the above detailed structural features, i.e. it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be apparent to those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope of the present invention and the scope of the disclosure.
The applicant states that the detailed process flow of the present invention is illustrated by the above examples, but the present invention is not limited to the above detailed process flow, i.e. it does not mean that the present invention must be implemented depending on the above detailed process flow. It should be apparent to those skilled in the art that any modification of the present invention, equivalent substitution of raw materials for the product of the present invention, addition of auxiliary components, selection of specific modes, etc., falls within the scope of the present invention and the scope of disclosure.
Claims (10)
1. The cutting and separating method of the QFN packaged chip is characterized by comprising the following steps of:
(1) Determining the position of a wafer inside the QFN package chip;
(2) And separating the plastic package body of the QFN package chip by adopting laser, and finishing cutting and separating of the QFN package chip after post-treatment.
2. The method for dicing and separating QFN package chips of claim 1, wherein the method for determining the wafer position inside the QFN package chip of step (1) comprises: and determining the position of the wafer inside the QFN package chip through the X-RAY.
3. The method for dicing and separating QFN package chips of claim 1, wherein said laser separation of step (2) is performed in a laser machine;
the laser energy in the laser separation in the step (2) is 30-40%.
4. The method for dicing and separating the QFN package chips of claim 1, wherein the laser depth in said laser separation of step (2) is 0.5-0.7 mm beyond the thickness of the pin metal.
5. The method for dicing and separating a QFN package chip of claim 1, wherein said molded package is a joint between a heat spreader and a package in the QFN package chip.
6. The method of dicing and separating QFN package chips of claim 1, wherein the laser separation of step (2) is preceded by a pretreatment process for the QFN package chips;
the pretreatment process comprises the steps of sequentially carrying out calibration base points, confirming radiating fins and laser positions;
the laser position is the position of the plastic package body.
7. The method of dicing and separating QFN package chips of claim 1, wherein said post-processing of step (2) comprises: adopting a first jig to detach the radiating fins and expose silver paste; and then cleaning silver paste by adopting a second jig.
8. The method for dicing and separating QFN package chips of claim 7, wherein said first jig has a sharp flat shape;
the first jig comprises metal tweezers.
9. The method of claim 7, wherein the second jig comprises a cotton swab.
10. The dicing separation method of QFN package chips of any of the claims 1-9, characterized in that the dicing separation method of QFN package chips comprises the steps of:
(a) Determining the position of the wafer inside the QFN package chip through X-RAY;
(b) Placing the QFN packaging chip in a laser machine, and then sequentially calibrating base points, confirming radiating fins and laser positions;
(c) Using 30-40% of energy to perform laser, and performing laser separation on the plastic package body at the joint of the radiating fin and the package body; the depth of the laser is 0.5-0.7 mm larger than the thickness of the metal of the pin;
(d) And disassembling the radiating fin by using the first jig, exposing the silver paste, cleaning the silver paste by using the second jig, and finishing cutting and separating of the QFN packaging chip after post-treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310364858.5A CN116387198A (en) | 2023-04-07 | 2023-04-07 | Cutting and separating method for QFN (quad Flat No-lead) packaged chips |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310364858.5A CN116387198A (en) | 2023-04-07 | 2023-04-07 | Cutting and separating method for QFN (quad Flat No-lead) packaged chips |
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| CN116387198A true CN116387198A (en) | 2023-07-04 |
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| CN202310364858.5A Pending CN116387198A (en) | 2023-04-07 | 2023-04-07 | Cutting and separating method for QFN (quad Flat No-lead) packaged chips |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249616A (en) * | 2002-02-22 | 2003-09-05 | New Japan Radio Co Ltd | Lead cutting method for electronic component |
| CN102231372A (en) * | 2011-06-30 | 2011-11-02 | 天水华天科技股份有限公司 | Multi-turn arranged carrier-free IC (Integrated Circuit) chip packaging component and manufacturing method thereof |
| CN102347225A (en) * | 2010-08-03 | 2012-02-08 | 凌力尔特有限公司 | Laser process for side plating of terminals |
| US20150102476A1 (en) * | 2012-04-06 | 2015-04-16 | Huatian Technology (Xi'an) Co., Ltd. | Quad flat no lead package and production method thereof |
| CN106129031A (en) * | 2016-07-07 | 2016-11-16 | 华天科技（昆山）电子有限公司 | Chip-packaging structure and method for packing thereof |
-
2023
- 2023-04-07 CN CN202310364858.5A patent/CN116387198A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003249616A (en) * | 2002-02-22 | 2003-09-05 | New Japan Radio Co Ltd | Lead cutting method for electronic component |
| CN102347225A (en) * | 2010-08-03 | 2012-02-08 | 凌力尔特有限公司 | Laser process for side plating of terminals |
| CN102231372A (en) * | 2011-06-30 | 2011-11-02 | 天水华天科技股份有限公司 | Multi-turn arranged carrier-free IC (Integrated Circuit) chip packaging component and manufacturing method thereof |
| US20150102476A1 (en) * | 2012-04-06 | 2015-04-16 | Huatian Technology (Xi'an) Co., Ltd. | Quad flat no lead package and production method thereof |
| CN106129031A (en) * | 2016-07-07 | 2016-11-16 | 华天科技（昆山）电子有限公司 | Chip-packaging structure and method for packing thereof |
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