CN116380327A - Film pressure sensor and preparation method thereof - Google Patents
Film pressure sensor and preparation method thereof Download PDFInfo
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- CN116380327A CN116380327A CN202310302337.7A CN202310302337A CN116380327A CN 116380327 A CN116380327 A CN 116380327A CN 202310302337 A CN202310302337 A CN 202310302337A CN 116380327 A CN116380327 A CN 116380327A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention relates to the technical field of piezoresistive sensing, in particular to a film pressure sensor and a preparation method thereof. The preparation method comprises the following steps: forming at least part of a non-complete conducting layer on one surface of the piezoresistive film layer, and forming a conductive film layer on the other surface by silk screen printing; silk screen printing conductive paste on the surface of the non-complete conducting layer, and drying to form at least a conductive film layer on the surface of the non-complete conducting layer; or forming a non-complete conduction layer on the two opposite surfaces of the piezoresistive film layer respectively, silk-screen printing conductive paste on the surface of each non-complete conduction layer, and drying to form at least part of the conductive film layer on the surface of each non-complete conduction layer. The preparation method can effectively solve the tunneling path problem when the layer structure of the film pressure sensor is reduced, and the obtained sensor is lighter and thinner and has better piezoresistive detection characteristics.
Description
[ field of technology ]
The invention relates to the technical field of piezoresistive sensing, in particular to a film pressure sensor and a preparation method thereof.
[ background Art ]
The resistance strain sensor mainly comprises a substrate, a pressure sensitive layer and an electrode, and generally comprises a first temperature resistant film, a first electrode layer, a piezoresistive film layer, a second electrode layer and a second temperature resistant film which are sequentially laminated. The first temperature-resistant film and the second temperature-resistant film play roles of reliability and function modules simultaneously, the two layers of temperature-resistant films not only need to bear the substrate of the electrode, but also bear the function of protecting the piezoresistive film layer, and further bear the function of contacting materials, and the functions are mutually coupled together, so that the selection surface of the materials is greatly reduced, and the appearance and touch diversity are influenced. More importantly, because the hardness and the curvature radius of the materials are different, stress concentration easily occurs on the inner surface of the resistance type strain sensor in the bending use process, so that folds and local arching are caused, water vapor and sundries are introduced along with degumming, and finally, the sensor is subjected to water absorption denaturation, electrode oxidation, even short circuit or open circuit and the like.
The prior art generally reduces stiffness and improves bending performance by reducing the number of layers of the resistive strain sensor. But tunneling occurs with reduced number of layer structures. As shown in fig. 1, the tunneling path is that the piezoresistive film layer includes a base material (light gray point) and conductive particles (dark gray point), and the cross section of the tunneling path is randomly distributed, so that long chains formed by adjacent conductive particles can form a conductive channel, so that a pair of special contact points a-B (a '-B') exist on two opposite surfaces of the piezoresistive film layer, the resistance between the special contact points a-B and the special contact points is a fixed value R0, at the moment, a pair of non-special contact points C-D are randomly selected, the expected resistance between the non-special contact points C-D is R1, R0 is far smaller than R1, and because all the special contact points a-B (a '-B') must be communicated, a large number of conductive channels exist in the parallel circuit, and a variable resistance signal generated by the piezoresistive effect is submerged by the conductive channel with lower resistance, so that piezoresistive detection cannot be performed.
Based on the above-mentioned drawbacks, it is necessary to provide a new technical solution to solve the above-mentioned technical problems of the existing film pressure sensor.
[ invention ]
The invention aims to provide a preparation method of a film pressure sensor, which aims to solve the problem that the piezoresistance detection cannot be carried out due to the tunneling passage phenomenon existing in the thin-layer structure of the traditional film pressure sensor.
In order to achieve the technical aim, the following technical scheme is adopted:
a preparation method of a film pressure sensor comprises the following steps:
forming a non-complete conducting layer on one surface of the piezoresistive film layer, and forming a conductive film layer on the other surface by screen printing;
silk screen printing conductive paste on the surface of the non-complete conduction layer, and drying to form at least part of a conductive film layer on the surface of the non-complete conduction layer;
or forming a non-complete conduction layer on two opposite surfaces of the piezoresistive film layer respectively, silk-screen printing conductive paste on the surface of each non-complete conduction layer, and drying to form at least part of the conductive film layer on the surface of each non-complete conduction layer.
In some embodiments, the non-fully conductive layer comprises any one of an aluminum oxide layer, a mixed layer of aluminum oxide and zinc oxide, an anisotropic conductive film, and an anisotropic conductive coating.
In some embodiments, the aluminum oxide layer and the mixed layer are obtained by a magnetron sputtering mode;
the anisotropic conductive adhesive film is obtained by attaching anisotropic conductive adhesive to the surface of the piezoresistive film layer;
the anisotropic conductive coating is obtained by adopting anisotropic conductive slurry screen printing.
In some embodiments, the conductive paste contains conductive particles therein.
In some embodiments, the conductive paste has at least one of the following technical features:
(1) The conductive particles comprise at least one of silver particles, copper particles, and carbon particles;
(2) The mass content of the conductive particles is 60-90%;
(3) The average particle diameter of the conductive particles is between 1nm and 10 mu m.
In some embodiments, the piezoresistive film layer has at least one of the following technical features:
the piezoresistive film layer contains at least one of graphene and carbon black and at least one of polypropylene, polyurethane and polyimide;
the thickness of the piezoresistive film layer is between 0.025mm and 0.2 mm.
In some embodiments, the piezoresistive film layer has a first surface and a second surface opposite the first surface, a first non-fully conductive layer is formed on the first surface, and at least a portion of a first conductive film layer is formed on the surface of the first non-fully conductive layer; and forming a second conductive film layer on the second surface.
In some embodiments, the positive electrode structure is stacked on the first non-complete conductive layer, the negative electrode structure is stacked on the void region, the first conductive film layer includes a positive electrode structure and a negative electrode structure, a gap is formed between the positive electrode structure and the negative electrode structure, the positive electrode structure is stacked on the first non-complete conductive layer, and the negative electrode structure is stacked on the void region;
or alternatively, the process may be performed,
the first conductive film layer is of a positive electrode structure and is fully overlapped with the first non-fully conductive layer, and the second conductive film layer is of a negative electrode structure;
or alternatively, the process may be performed,
the first conductive film layer is of a negative electrode structure and is completely overlapped with the first non-complete conducting layer, and the second conductive film layer is of a positive electrode structure.
In some embodiments, the piezoresistive film layer has a first surface and a second surface opposite the first surface, a first non-fully conductive layer is formed on the first surface, a second non-fully conductive layer is formed on the second surface, at least a portion of the first conductive film layer is formed on the first non-fully conductive layer, and a second conductive film layer is formed on the second non-fully conductive layer.
In some embodiments, the positive electrode structure is stacked on the first non-complete conductive layer, the negative electrode structure is stacked on the void region, the first conductive film layer includes a positive electrode structure and a negative electrode structure, a gap is formed between the positive electrode structure and the negative electrode structure, the positive electrode structure is stacked on the first non-complete conductive layer, and the negative electrode structure is stacked on the void region;
or alternatively, the process may be performed,
the first conductive film layer is of a positive electrode structure and is fully overlapped with the first non-fully conductive layer, and the second conductive film layer is of a negative electrode structure;
or alternatively, the process may be performed,
the first conductive film layer is of a negative electrode structure and is completely overlapped with the first non-complete conducting layer, and the second conductive film layer is of a positive electrode structure.
Compared with the prior art, the preparation method of the film pressure sensor provided by the embodiment of the invention has the advantages that the non-complete conduction layer is formed on at least one surface of the piezoresistive film layer, and then the conductive layers are respectively silk-screened on the non-complete conduction layer and the surface opposite to the first surface, so that when the formed film pressure sensor has a tunneling path in the piezoresistive film layer, the problem of piezoresistance detection failure caused by the tunneling path can be effectively solved due to the existence of the non-complete conduction layer, and meanwhile, the thinner film pressure sensor can be obtained.
Another object of the present invention is to provide a film pressure sensor. The technical scheme adopted by the method is as follows:
a diaphragm pressure sensor, comprising:
a piezoresistive film layer having a first surface and a second surface opposite the first surface;
a first non-fully conductive layer attached to the first surface;
a first conductive film layer at least partially attached to the first non-fully conductive layer;
a second conductive film layer attached to the second surface; the film pressure sensor is prepared according to the preparation method;
or alternatively, the process may be performed,
the film pressure sensor includes:
a piezoresistive film layer having a first surface and a second surface opposite the first surface;
a first non-fully conductive layer attached to the first surface;
a second non-fully conductive layer attached to the second surface;
a first conductive film layer at least partially attached to the first non-fully conductive layer;
a second conductive film layer attached to the second non-fully conductive layer;
The film pressure sensor is prepared according to the preparation method.
Compared with the prior art, the thin film pressure sensor provided by the embodiment of the invention has the characteristics of fewer layer structures, light weight and thinness, and effectively solves the tunneling path effect existing in the piezoresistive film layer, thus having good piezoresistive detection performance, good flexibility and higher bending use performance.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a tunneling phenomenon of a conventional thin film pressure sensor;
FIG. 2 is a schematic diagram of a film pressure sensor according to an embodiment of the present invention to avoid tunneling;
FIG. 3 is a simplified flow chart of a method for manufacturing a thin film pressure sensor according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a thin film pressure sensor prepared by the method for preparing a thin film pressure sensor according to example 1, example 4, and example 7 of the present invention;
FIG. 5 is a schematic cross-sectional view of a thin film pressure sensor prepared by the method for preparing a thin film pressure sensor according to example 3 and example 6 of the present invention;
FIG. 6 is a schematic perspective view of a thin film pressure sensor according to the method for manufacturing a thin film pressure sensor of the present invention in example 3, example 6 and example 9;
FIG. 7 is a simplified schematic diagram of the process flow of the method for manufacturing a thin film pressure sensor according to the present invention in examples 2, 5, 7 and 9;
FIG. 8 is a schematic cross-sectional view of a thin film pressure sensor prepared by the method for preparing a thin film pressure sensor according to embodiment 2, embodiment 5, and embodiment 8 of the present invention;
FIG. 9 is a schematic cross-sectional view of a thin film pressure sensor prepared by the method for preparing a thin film pressure sensor according to embodiment 9 of the present invention;
fig. 10 is a schematic diagram of detection sampling points of the thin film pressure sensor provided in embodiment 1.
The arrows in the analog circuits shown in fig. 4, fig. 5, fig. 8, and fig. 9 indicate the current flow direction during piezoresistive detection.
Reference numerals:
10. a membrane pressure sensor;
11. a piezoresistive membrane layer; 1101. a first surface; 1102. a second surface;
12. a non-complete conductive layer; 121. a first non-fully conductive layer; 122. a second non-fully conductive layer;
13. a first conductive film layer; 131. a positive electrode structure; 132. a negative electrode structure; 133. a positive electrode lead-out portion; 134. a negative electrode lead-out portion;
14. And a second conductive film layer.
[ detailed description ] of the invention
The invention will be further described with reference to the drawings and embodiments. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
Noun interpretation:
the non-complete conduction layer refers to a layer of film layer formed on the surface of the piezoresistive film layer, and due to the existence of the film layer, even if tunneling occurs in the piezoresistive film layer, when the conductive film layer is formed on the film layer, the film layer can effectively block direct conduction between the tunneling site and the conductive film layer under the condition that the piezoresistive film layer is not extruded.
Referring to fig. 2 to 6 and fig. 7 to 9, a method for manufacturing a thin film pressure sensor 10 is provided in an embodiment of the invention. In one embodiment, the method of preparation comprises the steps of:
in step S11, a non-complete conductive layer 12 is formed on one surface of the piezoresistive film layer 11.
Step S12, silk-screen printing a conductive film layer on the other surface of the piezoresistive film layer 11, silk-screen printing conductive paste on the surface of the non-fully conductive layer 12, and drying to form the conductive film layer on the surface of the non-fully conductive layer 12.
In some embodiments of step S11, the piezoresistive film layer 11 has a first surface 1101 and a second surface 1102, and the first surface 1101 and the second surface 1102 are opposite to each other, and the non-fully conductive layer 12 may be formed on the first surface 1101 or the non-fully conductive layer 12 may be formed on the second surface 1102. The non-fully conductive layer 12 may be formed by magnetron sputtering of an electrically insulating material such as aluminum oxide (Al) 2 O 3 ) Obtained, or by magnetron sputtering of electrically insulating material with semiconductor material, e.g. simultaneous magnetron sputtering of Al 2 O 3 And zinc oxide (ZnO), etc., the magnetron sputtering power is 30W-50W, the magnetron sputtering time is 0.5 min-2 min, and the magnetron sputtering speed is 0.05 nm/s-0.09 nm/s. In some embodiments, the non-fully conductive layer 12 may also be formed by attaching an anisotropic conductive film (Anisotropic Conductive Film; abbreviated as ACF) or applying an anisotropic conductive ink to the first surface 1101 And (3) a conductive coating. In some embodiments, the anisotropic conductive ink contains anisotropic conductive particles, the anisotropic conductive particles have a core-shell structure, the core part is a resin, such as at least one of Polystyrene (PS), polycarbonate (PC) and High Density Polyethylene (HDPE), and the shell part is at least one of a gold layer, a nickel layer, a silver layer and a copper layer, and the gold, nickel, silver and copper are plated on the surface of the resin by electroplating. In some embodiments, the anisotropic conductive particles have a particle size between 3 μm and 5 μm. In some embodiments, the anisotropic conductive particles are at least one conductive gold sphere (Conductive Particle) available from the company, inc. of the Welch technology Co., ltd. Under the model MCC-04IT-013C, MCC-04IT-003C, MCC-05CP-053C, MCC-05SE-053C, MCC-05SK-023C, MCC-05 SK-003C. In some embodiments, the thickness of the non-fully conductive layer 12 obtained by magnetron sputtering is between 10nm and 60nm, while the thickness of the non-fully conductive layer 12 obtained by attaching ACF or coating anisotropic conductive ink to form an anisotropic conductive coating is between 100nm and 10 μm, if the thickness is too thin, a non-fully conductive layer structure cannot be formed, if the thickness is too thick, the film layer is completely insulating and is brittle, has no flexibility, and cannot realize a function of conducting under the action of external pressure.
In some embodiments, the non-fully conductive layer 12 is attached to the first surface 1101 in a pattern such that a portion of the first surface 1101 is exposed to form a void region. These patterned non-complete conductive layers 12 are beneficial to forming positive electrode structures on the non-complete conductive layers 12 and forming negative electrode structures on the void areas during subsequent screen printing of conductive paste on the non-complete conductive layers 12, so that the positive electrode structures and the negative electrode structures can be obtained on the same side, and the obtained thin film pressure sensor 10 is lighter and thinner. Naturally, the negative electrode structure may be formed on the surface of the non-fully conductive layer 12, and the positive electrode structure may be formed in the void region.
In some embodiments of step S12, the non-fully conductive layer 12 and the second surface 1102 are screen-printed with a layer of conductive paste, and after drying to obtain a conductive film layer, the second surface 1102 is screen-printed with a layer of conductive paste, and finally drying is performed to obtain a conductive film layer attached to the second surface 1102. Of course, the two conductive film layers may be formed in reverse, and the order of formation is not limited.
In some embodiments, the conductive paste contains conductive particles, and the conductive particles are present such that the conductive particles left behind after the conductive paste is dried form a conductive film layer.
In some embodiments, the conductive particles have a particle size on the order of nanometers to facilitate thinner conductive film layers. In some embodiments, the conductive particles have an average particle size between 1nm and 500 nm.
In some embodiments, the conductive particles include at least one of silver particles, copper particles, and carbon particles, such as silver particles in the conductive paste, copper particles in the conductive paste, or carbon particles in the conductive paste, or both silver particles and copper particles in the conductive paste, or both silver particles and carbon particles in the conductive paste, or both copper particles and carbon particles in the conductive paste, or both silver particles, copper particles, and carbon particles in the conductive paste.
In some embodiments, the mass content of the conductive particles in the conductive paste is between 60% and 90%, the content of the conductive particles is too small, so that a continuous conductive film layer is not easy to form, and if the conductive particles are more, the coating is not easy to form a uniform conductive film layer.
In some embodiments, the drying temperature is 80 ℃ to 300 ℃ and the drying time is 30min to 180min. In some embodiments, the thickness of the conductive film layer is between 1 μm and 5 μm, and it is difficult to form a complete conductive layer if the conductive film layer is too thin, which is disadvantageous in obtaining a thin and lightweight thin film pressure sensor, and may deteriorate flexibility and bending performance of the thin film pressure sensor.
According to the thin film pressure sensor 10 prepared in steps S11 to S12, the non-complete conductive layer 12 is formed on only one surface of the piezoresistive film layer 11, so in some embodiments, the conductive film layer silk-screened on the surface of the non-complete conductive layer 12 is the first conductive film layer 13, and the conductive film layer silk-screened on the second surface 1102 is the second conductive film layer 14, where the first conductive film layer 13 may be used as the positive electrode structure 131 or the negative electrode structure 132, and when the first conductive film layer 13 is used as the positive electrode structure 131, the second conductive film layer 14 is used as the negative electrode structure 132; when the first conductive film layer 13 is used as the negative electrode structure 132, the second conductive film layer 14 is used as the positive electrode structure 131. In some embodiments, the first conductive film layer 13 includes a positive electrode structure 131 and a negative electrode structure 132, and a gap is formed between the positive electrode structure 131 and the negative electrode structure 132, where a portion of the first conductive film layer 13 is directly screen-printed on the first surface 1101, the remaining portion is directly screen-printed on the 1 non-fully conductive layer 12, a portion screen-printed on the first surface 1101 forms the negative electrode structure 132, and a portion screen-printed on the non-fully conductive layer 12 forms the positive electrode structure 131, or a portion screen-printed on the first surface 1101 forms the positive electrode structure 131, and a portion screen-printed on the non-fully conductive layer 12 forms the negative electrode structure 132, and the second conductive film layer 14 is only used as a conductive layer. In some embodiments, the positive electrode structure and the negative electrode structure on the same side of the piezoresistive film layer 11 are in an interdigitated distribution.
In another embodiment, the method of preparation comprises the steps of:
in step S21, a non-complete conductive layer 12 is formed on each of the opposite surfaces of the piezoresistive film layer 11.
Step S22, silk screen printing conductive paste on the surface of each non-fully conductive layer 12, and drying to form a conductive film layer on the surface of each non-fully conductive layer 12.
In some embodiments of step S21, piezoresistive film layer 11 has a first surface 1101 and a second surface 1102, and first surface 1101 and second surface 1102 are opposite to each other, forming a first non-fully conductive layer 121 on first surface 1101 and a second non-fully conductive layer 122 on second surface 1102. The first non-fully conductive layer 121 and the second non-fully conductive layer 122 may each be formed by magnetron sputtering of an electrically insulating material such as aluminum oxide (Al) 2 O 3 ) Obtained, or by magnetron sputtering of electrically insulating material with semiconductor material, e.g. simultaneous magnetron sputtering of Al 2 O 3 And oxygenZinc oxide (ZnO) and the like, the magnetron sputtering speed is between 0.05nm/s and 0.09nm/s, the magnetron sputtering power is between 30W and 50W, and the magnetron sputtering time is between 0.5min and 2min.
In some embodiments, the first non-fully conductive layer 121 or the second non-fully conductive layer 122 may be further obtained by attaching an anisotropic conductive film or coating an anisotropic conductive ink on the first surface 1101.
In some embodiments, the thickness of the first non-fully conductive layer 1201 obtained by magnetron sputtering is between 10nm and 60nm, while the thickness of the first non-fully conductive layer 1201 obtained by attaching ACF or coating anisotropic conductive ink to form an anisotropic conductive coating is between 100nm and 10 μm, if the thickness is too thin, a non-fully conductive layer structure cannot be formed, if the thickness is too thick, the film layer is fully insulating and is brittle, has no flexibility, and cannot realize a function of conducting under the action of external pressure.
In some embodiments, the thickness of the second non-fully conductive layer 1202 obtained by magnetron sputtering is between 10nm and 60nm, while the thickness of the second non-fully conductive layer 1202 obtained by attaching ACF or coating anisotropic conductive ink to form an anisotropic conductive coating is between 100nm and 10 μm, if the thickness is too thin, a non-fully conductive layer structure cannot be formed, if the thickness is too thick, the film layer is completely insulating and brittle, has no flexibility, and cannot realize a function of conducting under the action of external pressure.
In some embodiments, the first non-complete conductive layer 1201 is attached to the first surface 1101 in a patterned manner, such that a portion of the first surface 1101 is exposed to form a void region. These patterned first non-complete conductive layers 1201 are beneficial to forming positive electrode structures on the surfaces of the first non-complete conductive layers 1201 and forming negative electrode structures in the void areas or forming negative electrode structures on the surfaces of the first non-complete conductive layers 1201 and forming positive electrode structures in the void areas when the conductive paste is screen printed on the first non-complete conductive layers 1201, so that the positive electrode structures and the negative electrode structures can be obtained on the same side, and the obtained thin film pressure sensor 10 is lighter and thinner. In some embodiments, the positive electrode structure and the negative electrode structure on the same side of the piezoresistive film layer 11 are in an interdigitated distribution.
In some embodiments of step S22, a layer of conductive paste may be silk-screened on the surface of the first non-fully conductive layer 121, and then dried to obtain a conductive film layer attached to the first non-fully conductive layer 121, and then silk-screened on the surface of the second non-fully conductive layer 122, and finally dried to obtain a conductive film layer attached to the second surface 1102. Of course, the two conductive film layers may be formed in reverse order. In some embodiments, the conductive paste contains conductive particles, and the conductive particles are present such that the conductive particles left behind after the conductive paste is dried form a conductive film layer.
In some embodiments, the conductive particles have a particle size on the order of nanometers to facilitate thinner conductive film layers.
In some embodiments, the conductive particles include at least one of silver particles, copper particles, and carbon particles, such as silver particles in the conductive paste, copper particles in the conductive paste, or carbon particles in the conductive paste, or both silver particles and copper particles in the conductive paste, or both silver particles and carbon particles in the conductive paste, or both copper particles and carbon particles in the conductive paste, or both silver particles, copper particles, and carbon particles in the conductive paste.
In some embodiments, the mass content of the conductive particles in the conductive paste is between 60% and 90%, the content of the conductive particles is too small, so that a continuous conductive film layer is not easy to form, and if the conductive particles are more, the coating is not easy to form a uniform conductive film layer.
In some embodiments, the drying temperature is 80 ℃ to 300 ℃ and the drying time is 30min to 180min.
According to the thin film pressure sensor 10 prepared in steps S21 to S22, the non-complete conduction layer 12 is formed on two opposite surfaces of the piezoresistive film layer 11, so in some embodiments, the non-complete conduction layer 12 formed on the first surface 1101 is the first non-complete conduction layer 121, the conductive film layer silk-screened on the surface of the first non-complete conduction layer 121 is the first conductive film layer 13, the non-complete conduction layer 12 formed on the second surface 1102 is the second non-complete conduction layer 122, the conductive film layer silk-screened on the second non-complete conduction layer 122 is the second conductive film layer 14, and the first conductive film layer 13 can be used as the positive electrode structure 131 or the negative electrode structure 132 when the first conductive film layer 13 is used as the positive electrode structure 131, and the second conductive film layer 14 is used as the negative electrode structure 132; when the first conductive film layer 13 is used as the negative electrode structure 132, the second conductive film layer 14 is used as the positive electrode structure 131. In some embodiments, the first non-complete conductive layer 121 is attached to the first surface 1101 in a patterned manner, so that a portion of the first surface 1101 is exposed to form a void region, and when the patterned first non-complete conductive layer 121 facilitates silk screen printing of a conductive paste, a positive electrode structure is formed on the surface of the first non-complete conductive layer 121 and a negative electrode structure is formed in the void region, or a negative electrode structure is formed on the surface of the first non-complete conductive layer 121 and a positive electrode structure is formed in the void region.
In some embodiments, the first conductive film layer 13 includes a positive electrode structure 131 and a negative electrode structure 132, and a gap is formed between the positive electrode structure 131 and the negative electrode structure 132, and the second conductive film layer 14 is used as a conductive layer, where the first conductive film layer 13 is patterned, and the positive electrode structure 131 and the negative electrode structure 132 may both form an interdigital electrode, or of course, other patterned structures may also be used.
In the two preparation embodiments, the piezoresistive film layer 11 may include a composite film of Polyurethane (PU), polyimide (PI), polypropylene (PP) and graphene (or carbon black), where the composite film is formed by mixing polypropylene and graphene (or carbon black) with each other or by doping graphene (or carbon black) in polypropylene. The graphene (or carbon black) is mixed in the polypropylene, so that the piezoresistive performance can be improved. In addition, a composite film of PI and graphene (or carbon black), or a composite film of PU and graphene (or carbon black) may be used. In some embodiments, the thickness of the composite membrane is between 0.025mm and 0.2mm, thereby facilitating the light weight and thin profile of the thin film pressure sensor 10.
Referring to fig. 5 and 7, the film pressure sensor 10 prepared by the above two embodiments has the following three structures.
The first thin film pressure sensor 10 has the following structure: one surface of the piezoresistive film layer 11 is laminated with a non-complete conduction layer 12, the other surface is screen printed with a second conductive film layer 14, and the surface of the non-complete conduction layer 12 is screen printed with a first conductive film layer 13.
Referring to fig. 4 and 5, the basic operation of the first film pressure sensor 10 is as follows:
when the first conductive film layer 13 and the piezoresistive film layer 11 are pressed, the non-full contact area is pressed, at this time, the first conductive film layer 13 and the piezoresistive film layer 11 are conducted, current flows into the first conductive film layer 13 from the positive electrode lead-out portion 133, and traverses the piezoresistive film layer 11 to the second conductive film layer 14 and flows out through the negative electrode lead-out portion 134, and a change in current is detected when the positive electrode lead-out portion 133 and the negative electrode lead-out portion 134 are connected, so that pressure-sensitive information is obtained. In the absence of pressure, the first conductive film layer 13 and the piezoresistive film layer 11 are in a non-complete contact state, i.e., the first conductive film layer 13 and the piezoresistive film layer 11 are not conductive to the piezoresistive film layer 11 due to the non-complete conductive layer 12.
The structure of the second type of film pressure sensor 10 is: the opposite surfaces of the piezoresistive film layer 11 are respectively laminated with a non-complete conduction layer 12 (i.e. a first non-complete conduction layer 121 and a second non-complete conduction layer 122), and the surface of each non-complete conduction layer 12 is silk-screened with a conductive film layer (i.e. the surface of the first non-complete conduction layer 121 is silk-screened with a first conductive film layer 13, and the surface of the second non-complete conduction layer 122 is silk-screened with a second conductive film layer 14). The basic operation of the second type of film pressure sensor 10 is the same as the basic operation of the first type of film pressure sensor 10, and for economy of description, no further explanation will be given here.
Referring to fig. 6 and 7, the structure of the third film pressure sensor 10 is as follows: the non-complete conducting layer 12 is laminated on one surface of the piezoresistive film layer 11, the second conducting film layer 14 is screen printed on the other surface, the non-complete conducting layer 12 is patterned, so that the partial surface of the piezoresistive film layer 11 is exposed to form a hollowed-out area, the first conducting film layer 13 is screen-printed on the surface of the non-complete conducting layer 12 and the hollowed-out area, the first conducting film layer 13 comprises a positive electrode structure 131 and a negative electrode structure 132, a gap is reserved between the positive electrode structure 131 and the negative electrode structure 132, the positive electrode structure 131 is laminated on the non-complete conducting layer 12, the negative electrode structure is laminated on the hollowed-out area, the positive electrode structure 131 and the negative electrode structure 132 are positioned on the same layer, the tail end of the positive electrode structure 131 is provided with a positive electrode lead-out part 133, and the tail end of the negative electrode structure 132 is provided with a negative electrode lead-out part 134.
Referring to fig. 7, the basic operation of the third type of thin film pressure sensor 10 is as follows:
when the piezoresistive film layer 11 is extruded, the positive electrode structure 131 and the piezoresistive film layer 11 are changed from incomplete contact to complete contact, at this time, the positive electrode structure 131 and the piezoresistive film layer 11 are conducted, current enters the positive electrode structure 131 from the positive electrode lead-out part 133, flows to the piezoresistive film layer 11 along the positive electrode structure 131, traverses the piezoresistive film layer 11 until reaching the second conductive film layer 14, flows along the second conductive film layer 14, and flows through the part where the negative electrode structure 132 is completely contacted with the piezoresistive film layer 11, and the current traverses the piezoresistive film layer 11 to enter the negative electrode structure 132, so that the change of the current can be detected when the positive electrode lead-out part 133 and the negative electrode lead-out part 134 are connected, so as to obtain pressure sensing information. When the pressure is not present, the positive electrode structure 131 and the piezoresistive film layer 11 are in a non-complete contact state, the positive electrode structure 131 and the piezoresistive film layer 11 are not conducted, and the negative electrode structure 132 and the piezoresistive film layer 11 can be conducted or not conducted.
The thin film pressure sensor 10 obtained by the preparation method of the thin film pressure sensor 10 provided by the embodiment of the invention can be used as a pressure-sensitive thin film sensor, parts of a robot (such as robot skin), parts of electronic equipment and the like.
In some embodiments, the robot includes skin, i.e., the film pressure sensor 10 prepared by embodiments of the present invention, i.e., the robot skin. The electronic device includes a thin film circuit including the thin film pressure sensor 10 prepared in accordance with the embodiments of the present invention.
In order to better illustrate the technical solution of the present invention, the following description will be made by a plurality of embodiments.
Example 1
Referring to fig. 3 and 4, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; the piezoresistive film layer 11 is a composite film with PP as a substrate and graphene doped, and has a thickness of 0.1mm.
(2) Magnetron sputtering a non-complete conducting layer 12 on the first surface 1101 of the piezoresistive film layer 11, wherein the magnetron sputtered target is aluminum oxide (Al 2 O 3 ) The sputtering power was 35W, the sputtering rate was 0.07nm/s, the sputtering time was 1min, and the average thickness of the obtained non-fully conductive layer 12 was 15nm.
(3) And screen-printing conductive paste on the second surface 1102 of the piezoresistive film layer 11, wherein the conductive paste contains silver particles, the mass content of the silver particles in the conductive paste is 80%, then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 100 ℃ for 60min to obtain a combination of the piezoresistive film layer 11 and the second conductive film layer 14, and the thickness of the second conductive film layer 14 is 3 mu m.
(4) And (3) screen printing conductive paste on the surface of the non-complete conducting layer 12 obtained in the step (2), wherein the conductive paste contains silver particles, the mass content of the silver particles in the conductive paste is 80%, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 140 ℃ for 30min to obtain a first conductive film layer 13, wherein the thickness of the first conductive film layer 13 is 3 mu m.
The obtained film pressure sensor was subjected to resistance value detection under pressure, specifically, a detection area of 2cm×2cm (for example, ABCD area as shown in fig. 10) was randomly defined, and then four points were uniformly taken in the detection area, such as midpoints (E, F, G, H points) along AO line, BO line, CO line and DO line, were pressed with a manometer at different pressures to detect resistance, each point was detected three times, and the results were averaged as shown in table 1.
TABLE 1 summary of resistance measurement results (unit: kΩ)
As can be seen from table 1, the E, F, G, H points have larger resistance under the pressure of 20g, and the resistance of each point gradually decreases with the increase of the pressure value until the resistance of E, H points is reduced to below 1kΩ under the pressure of 1500g, and the resistance of F, G points is still above 1kΩ, which indicates that the obtained film pressure sensor has better blocking effect of the non-fully conductive layer 12 and is not easy to generate tunneling effect.
Example 2
Referring to fig. 7 and 8, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; wherein, the piezoresistive film layer 11 is PU and has the thickness of 0.1mm.
(2) Magnetron sputtering a non-complete conducting layer 12 on the first surface 1101 and the second surface 1102 of the piezoresistive film layer 11 respectively, wherein the magnetron sputtering target is Al 2 O 3 The sputtering power was 35W, the sputtering rate was 0.07nm/s, the sputtering time was 1.5min, and the average thickness of the resulting non-fully conductive layer 12 was 20nm.
(3) And respectively screen-printing conductive paste on the surfaces of the two non-fully conductive layers 12, wherein the conductive paste contains silver particles with the mass content of 80%, then placing the piezoresistive film layers 11 printed with the conductive paste in a blast oven, and drying at 100 ℃ for 60min to obtain a first conductive film layer 13 and a second conductive film layer 14, wherein the first conductive film layer 13 is a positive electrode structure 131 with the thickness of 3 mu m, the second conductive film layer 14 is a negative electrode structure 132 with the thickness of 3 mu m.
The resistance value was measured by the method of example 1, and the results are shown in table 2.
TABLE 2 summary of resistance measurement results (unit: kΩ)
As can be seen from table 2, the E, F, G, H points have larger resistance under the pressure of 20g, and the resistance of each point gradually decreases with the increase of the pressure value until the resistance of each point is reduced to be less than 1kΩ under the pressure of 600g, which indicates that the obtained film pressure sensor has better blocking effect of the non-fully conductive layer 12 and is not easy to generate tunneling effect.
Example 3
Referring to fig. 3, 5 and 6, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; wherein, the piezoresistive film layer 11 is PU and has the thickness of 0.1mm.
(2) Magnetron sputtering a non-complete conducting layer 12 on the first surface 1101 of the piezoresistive film layer 11, wherein the magnetron sputtered target is aluminum oxide (Al 2 O 3 ) The non-fully conductive layer 12 was obtained with an average thickness of 10nm at a sputtering power of 35W, a sputtering rate of 0.07nm/s and a sputtering time of 0.8min, and the non-fully conductive layer 12 was patterned such that a portion of the first surface 1101 was exposed to form a void region (not shown).
(3) And screen-printing conductive paste on the surface of the non-fully conductive layer 12 and the void region of the first surface 1101 respectively, wherein the conductive paste contains silver particles with the mass content of 80%, then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 200 ℃ for 30min to obtain a first conductive film layer 13, wherein the first conductive film layer 13 comprises a positive electrode structure 131 and a negative electrode structure 132, the negative electrode structure 132 is screen-printed on the void region, a gap is formed between the positive electrode structure 131 and the negative electrode structure 132, the average thickness of the positive electrode structure 131 is 1.5 mu m, and the average thickness of the negative electrode structure 132 is 1.49 mu m.
(4) And screen-printing a conductive paste on the second surface 1102, wherein the conductive paste contains silver particles with the mass content of 80%, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 200 ℃ for 30min to obtain a second conductive film layer 14, wherein the thickness of the second conductive film layer 14 is 2 mu m.
The resistance value was measured by the method of example 1, and the results are shown in table 3.
TABLE 3 summary of resistance measurement results (unit: kΩ)
As can be seen from table 3, the E, F, G, H points have larger resistance under the pressure of 20g, and the resistance of each point gradually decreases with the increase of the pressure value until the resistance of each point is reduced to below 1kΩ under the pressure of 1500g, which indicates that the obtained film pressure sensor has better blocking effect of the non-fully conductive layer 12 and is not easy to generate tunneling effect.
Example 4
Referring to fig. 3 and 4, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; the piezoresistive film layer 11 is a composite film with PI as a substrate and carbon black doped, and the thickness is 0.1mm.
(2) And pressing ACF glue on the first surface 1101 of the piezoresistive film layer 11, specifically pressing ACF glue on the first surface 1101 of the piezoresistive film layer 11 at 90 ℃ and under the pressure condition of 2MPa, so as to obtain a non-complete conduction layer 12, wherein the average thickness of the non-complete conduction layer 12 is 1 mu m.
(3) And screen printing conductive paste on the second surface 1102 of the piezoresistive film layer 11, wherein the conductive paste contains silver particles, the mass content of the silver particles is 80%, then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 100 ℃ for 60min to obtain a combination of the piezoresistive film layer 11 and the second conductive film layer 14, and the average thickness of the second conductive film layer 14 is 3 μm.
(4) And (3) screen printing conductive paste on the surface of the non-complete conducting layer 12 obtained in the step (2), wherein the conductive paste contains silver particles, the mass content of the silver particles is 80%, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 140 ℃ for 30min to obtain a first conductive film layer 13, wherein the average thickness of the first conductive film layer 13 is 3 mu m.
Example 5
Referring to fig. 7 and 8, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; the piezoresistive film layer 11 is a composite film with PI as a substrate and carbon black doped, and the thickness is 0.1mm.
(2) And pressing ACF glue on the first surface 1101 and the second surface 1102 of the piezoresistive film layer 11 respectively, specifically pressing ACF glue on the first surface 1101 and the second surface 1102 of the piezoresistive film layer 11 at 90 ℃ and under the pressure condition of 2MPa to obtain two non-complete conduction layers 12, namely a first non-complete conduction layer 121 attached to the first surface 1101, wherein the average thickness is 200nm, and a second non-complete conduction layer 122 attached to the second surface 1102, and the average thickness is 200nm.
(3) The first non-complete conductive layer 121 was screen-printed with a conductive paste containing silver particles with a mass content of 80%, and then the piezoresistive film layer 11 printed with the conductive paste was placed in a blast oven, and dried at 100 ℃ for 60 minutes, to obtain a first conductive film layer 13 with an average thickness of 3 μm.
(4) And (2) screen printing conductive paste on the surface of the second non-complete conducting layer 122 obtained in the step (2), wherein the conductive paste contains silver particles, the mass content of the silver particles is 80%, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 140 ℃ for 30min to obtain a second conductive film layer 14, and the average thickness of the second conductive film layer is 3 mu m.
Example 6
Referring to fig. 3, 5 and 6, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; the piezoresistive film layer 11 is a composite film with PI as a substrate and carbon black doped, and the thickness is 0.1mm.
(2) The ACF glue is pressed on the first surface 1101 of the piezoresistive film layer 11, specifically, the ACF glue is pressed on the first surface 1101 of the piezoresistive film layer 11 at 90 ℃ and under a pressure of 2MPa, so as to obtain a non-complete conductive layer 12, the average thickness of the non-complete conductive layer 12 is 600nm, and the non-complete conductive layer 12 is patterned, so that a part of the first surface 1101 is exposed to form a void area (not labeled in the figure).
(3) The second surface 1102 of the piezoresistive film layer 11 was screen-printed with a conductive paste containing silver particles with a mass content of 80%, and then the piezoresistive film layer 11 printed with the conductive paste was placed in a blast oven, dried at 100 ℃ for 60min, to obtain a second conductive film layer 14, and the thickness of the second conductive film layer 14 was 2 μm.
(4) And (2) respectively screen-printing conductive paste on the surface of the non-complete conducting layer 12 and the void area, wherein the conductive paste contains silver particles with the mass content of 80%, then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 140 ℃ for 30min to obtain a first conductive film layer 13, wherein the first conductive film layer 13 comprises a positive electrode structure 131 and a negative electrode structure 132, a gap is arranged between the positive electrode structure 131 and the negative electrode structure 132, the positive electrode structure 131 is screen-printed on the surface of the non-complete conducting layer 12, the negative electrode structure 132 is screen-printed on the void area, the average thickness of the positive electrode structure 131 is 2 mu m, and the average thickness of the negative electrode structure 132 is 1.94 mu m.
Example 7
Referring to fig. 3 and 4, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; the piezoresistive film layer 11 is a composite film with PI as a substrate and carbon black doped, and the thickness is 0.1mm.
(2) The anisotropic conductive ink is silk-screened on the first surface 1101 of the piezoresistive film layer 11, wherein the anisotropic conductive ink contains anisotropic conductive particles, the anisotropic conductive particles are selected from MCC-04IT-003C, and then baked at 100 ℃ for 30min to obtain the non-complete conductive layer 12, and the average thickness is 500nm.
(3) And screen printing conductive paste on the second surface 1102 of the piezoresistive film layer 11, wherein the conductive paste contains silver particles, the mass content of the silver particles is 80%, then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 100 ℃ for 60min to obtain a combination of the piezoresistive film layer 11 and the second conductive film layer 14, and the average thickness of the second conductive film layer 14 is 5 μm.
(4) And (3) screen printing conductive paste on the surface of the non-complete conducting layer 12 obtained in the step (2), wherein the conductive paste contains silver particles, the mass content of the silver particles is 80%, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 140 ℃ for 30min to obtain a first conductive film layer 13, wherein the average thickness is 3 mu m.
Example 8
Referring to fig. 7 and 8, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; the piezoresistive film layer 11 is a composite film with PI as a substrate and carbon black doped, and the thickness is 0.1mm.
(2) The anisotropic conductive ink is respectively screen-printed on the first surface 1101 and the second surface 1102 of the piezoresistive film layer 11, wherein the anisotropic conductive ink contains anisotropic conductive particles, the mass content of the anisotropic conductive particles is 70%, the anisotropic conductive particles are selected from MCC-04IT-003C, and then the anisotropic conductive particles are baked at 100 ℃ for 30min to obtain two non-complete conductive layers 12, namely a first non-complete conductive layer 121 attached to the first surface 1101, the average thickness is 250nm, and a second non-complete conductive layer 122 attached to the second surface 1102, and the average thickness is 250nm.
(3) The first non-complete conductive layer 121 was screen-printed with a conductive paste containing silver particles with a mass content of 80%, and then the piezoresistive film layer 11 printed with the conductive paste was placed in a blast oven, and dried at 100 ℃ for 60 minutes, to obtain a first conductive film layer 13 with an average thickness of 2.5 μm.
(4) And (2) screen printing conductive paste on the surface of the second non-complete conducting layer 122 obtained in the step (2), wherein the conductive paste contains silver particles, the mass content of the silver particles is 80%, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 140 ℃ for 30min to obtain a second conductive film layer 14, and the average thickness of the second conductive film layer is 2.5 mu m.
Example 9
Referring to fig. 7, 9 and 6, a method for manufacturing a thin film pressure sensor 10 includes the following steps:
(1) Cleaning the piezoresistive film layer 11 to remove greasy dirt and impurities on the surface of the piezoresistive film layer 11; the piezoresistive film layer 11 is a composite film with PI as a substrate and carbon black doped, and the thickness is 0.1mm.
(2) The anisotropic conductive ink is respectively screen-printed on the first surface 1101 and the second surface 1102 of the piezoresistive film layer 11, wherein the anisotropic conductive ink contains anisotropic conductive particles, the mass content of the anisotropic conductive particles is 80%, the anisotropic conductive particles are selected from MCC-04IT-003C, and then the anisotropic conductive particles are baked at 100 ℃ for 30min to obtain two non-complete conductive layers 12, namely a first non-complete conductive layer 121 attached to the first surface 1101, the average thickness is 300nm, the first non-complete conductive layer 1201 has a void-avoiding area, so that the local first surface 1101 is exposed, and the second non-complete conductive layer 1202 attached to the second surface 1102 has an average thickness of 300nm.
(3) And screen-printing conductive paste containing silver particles and having a mass content of 80% on the surface of the first non-fully contact layer 1201 and the void region, respectively, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, drying at 100 ℃ for 60min to obtain a first conductive film layer 13, wherein the thickness of the first conductive film layer 13 is 2 μm, including a positive electrode structure 131 and a negative electrode structure 132, and a gap is formed between the positive electrode structure 131 and the negative electrode structure 132, the positive electrode structure 131 is screen-printed on the first non-fully conductive layer 1201, the average thickness is 2 μm, the negative electrode structure 132 is screen-printed on the void region, and the average thickness is 1.97 μm.
(4) And (2) screen-printing conductive paste on the surface of the second non-complete conductive layer 1202 obtained in the step (2), wherein the conductive paste contains silver particles, the mass content of the silver particles is 80%, and then placing the piezoresistive film layer 11 printed with the conductive paste in a blast oven, and drying at 140 ℃ for 30min to obtain a second conductive film layer 14, wherein the average thickness of the second conductive film layer 14 is 2 μm.
What has been described above is only a partial embodiment of the invention. It should be noted herein that modifications can be made by those skilled in the art without departing from the inventive concept, and these are intended to be within the scope of the present invention.
Claims (11)
1. The preparation method of the film pressure sensor is characterized by comprising the following steps of:
forming a non-complete conducting layer on one surface of the piezoresistive film layer, and forming a conductive film layer on the other surface by screen printing;
silk screen printing conductive paste on the surface of the non-complete conduction layer, and drying to form at least part of a conductive film layer on the surface of the non-complete conduction layer;
or forming a non-complete conduction layer on two opposite surfaces of the piezoresistive film layer respectively, silk-screen printing conductive paste on the surface of each non-complete conduction layer, and drying to form at least part of the conductive film layer on the surface of each non-complete conduction layer.
2. The method of manufacturing a thin film pressure sensor according to claim 1, wherein the non-fully conductive layer comprises any one of an aluminum oxide layer, a mixed layer of aluminum oxide and zinc oxide, an anisotropic conductive film, and an anisotropic conductive coating.
3. The method for manufacturing the film pressure sensor according to claim 2, wherein the aluminum oxide layer and the mixed layer are obtained by a magnetron sputtering mode;
the anisotropic conductive adhesive film is obtained by attaching anisotropic conductive adhesive to the surface of the piezoresistive film layer;
The anisotropic conductive coating is obtained by adopting anisotropic conductive slurry screen printing.
4. The method of manufacturing a thin film pressure sensor according to claim 1, wherein the electroconductive paste contains electroconductive particles.
5. The method for manufacturing a thin film pressure sensor according to claim 4, wherein the conductive paste has at least one of the following technical characteristics:
(1) The conductive particles comprise at least one of silver particles, copper particles, and carbon particles;
(2) The mass content of the conductive particles is 60-90%;
(3) The average particle diameter of the conductive particles is between 1nm and 10 mu m.
6. The method of manufacturing a thin film pressure sensor of claim 1, wherein the piezoresistive film layer has at least one of the following technical characteristics:
the piezoresistive film layer contains at least one of graphene and carbon black and at least one of polypropylene, polyurethane and polyimide;
the thickness of the piezoresistive film layer is between 0.025mm and 0.2 mm.
7. The method of manufacturing a thin film pressure sensor according to any one of claims 1 to 6, wherein the piezoresistive film layer has a first surface and a second surface opposite to the first surface, a first non-fully conductive layer is formed on the first surface, and at least a part of a first conductive film layer is formed on the surface of the first non-fully conductive layer; and forming a second conductive film layer on the second surface.
8. The method of manufacturing a thin film pressure sensor of claim 7, wherein the first non-fully conductive layer is patterned to form a void region with partial exposure of the first surface, the first conductive film layer comprises a positive electrode structure and a negative electrode structure, a gap is provided between the positive electrode structure and the negative electrode structure, the positive electrode structure is stacked on the first non-fully conductive layer, and the negative electrode structure is stacked on the void region;
or alternatively, the process may be performed,
the first conductive film layer is of a positive electrode structure and is fully overlapped with the first non-fully conductive layer, and the second conductive film layer is of a negative electrode structure;
or alternatively, the process may be performed,
the first conductive film layer is of a negative electrode structure and is completely overlapped with the first non-complete conducting layer, and the second conductive film layer is of a positive electrode structure.
9. The method of manufacturing a thin film pressure sensor according to any one of claims 1 to 6, wherein the piezoresistive film layer has a first surface and a second surface opposite to the first surface, a first non-fully conductive layer is formed on the first surface, a second non-fully conductive layer is formed on the second surface, at least a part of the first conductive film layer is formed on the surface of the first non-fully conductive layer, and a second conductive film layer is formed on the surface of the second non-fully conductive layer.
10. The method of manufacturing a thin film pressure sensor of claim 9, wherein the first non-fully conductive layer is patterned to form a void region with partial exposure of the first surface, the first conductive film layer comprises a positive electrode structure and a negative electrode structure, a gap is provided between the positive electrode structure and the negative electrode structure, the positive electrode structure is stacked on the first non-fully conductive layer, and the negative electrode structure is stacked on the void region;
or alternatively, the process may be performed,
the first conductive film layer is of a positive electrode structure and is fully overlapped with the first non-fully conductive layer, and the second conductive film layer is of a negative electrode structure;
or alternatively, the process may be performed,
the first conductive film layer is of a negative electrode structure and is completely overlapped with the first non-complete conducting layer, and the second conductive film layer is of a positive electrode structure.
11. A diaphragm pressure sensor, the diaphragm pressure sensor comprising:
a piezoresistive film layer having a first surface and a second surface opposite the first surface;
a first non-fully conductive layer attached to the first surface;
a first conductive film layer at least partially attached to the first non-fully conductive layer;
A second conductive film layer attached to the second surface; the thin film pressure sensor is prepared according to the preparation method of any one of claims 7 to 8;
or alternatively, the process may be performed,
the film pressure sensor includes:
a piezoresistive film layer having a first surface and a second surface opposite the first surface;
a first non-fully conductive layer attached to the first surface;
a second non-fully conductive layer attached to the second surface;
a first conductive film layer at least partially attached to the first non-fully conductive layer;
a second conductive film layer attached to the second non-fully conductive layer;
the thin film pressure sensor is prepared according to the preparation method of any one of claims 9 to 10.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851968A (en) * | 2015-05-21 | 2015-08-19 | 中国特种设备检测研究院 | Anisotropy film for in-plane strain sensor, and preparation method thereof |
| CN110108394A (en) * | 2019-05-20 | 2019-08-09 | 中国科学院重庆绿色智能技术研究院 | Large area array separate type pressure sensor and preparation method thereof, waterborne conductive slurry and preparation method thereof |
| TW202010628A (en) * | 2018-08-31 | 2020-03-16 | 瑋鋒科技股份有限公司 | Anisotropic conductive film structure and manufacturing method thereof capable of increasing number and density of conductive particles and greatly enhancing conductivity |
| CN113470867A (en) * | 2020-03-31 | 2021-10-01 | 东友精细化工有限公司 | Conductive film laminate and method for producing same |
| CN113829598A (en) * | 2021-09-29 | 2021-12-24 | 墨现科技(东莞)有限公司 | Piezoresistive film and preparation method and application thereof |
| CN113921168A (en) * | 2020-07-07 | 2022-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible electrode for fabric and preparation method and application method thereof |
-
2023
- 2023-03-23 CN CN202310302337.7A patent/CN116380327A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851968A (en) * | 2015-05-21 | 2015-08-19 | 中国特种设备检测研究院 | Anisotropy film for in-plane strain sensor, and preparation method thereof |
| TW202010628A (en) * | 2018-08-31 | 2020-03-16 | 瑋鋒科技股份有限公司 | Anisotropic conductive film structure and manufacturing method thereof capable of increasing number and density of conductive particles and greatly enhancing conductivity |
| CN110108394A (en) * | 2019-05-20 | 2019-08-09 | 中国科学院重庆绿色智能技术研究院 | Large area array separate type pressure sensor and preparation method thereof, waterborne conductive slurry and preparation method thereof |
| CN113470867A (en) * | 2020-03-31 | 2021-10-01 | 东友精细化工有限公司 | Conductive film laminate and method for producing same |
| CN113921168A (en) * | 2020-07-07 | 2022-01-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible electrode for fabric and preparation method and application method thereof |
| CN113829598A (en) * | 2021-09-29 | 2021-12-24 | 墨现科技(东莞)有限公司 | Piezoresistive film and preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 朱圆圆等: "基于磁控溅射技术的柔性传感器在健康监测中的应用", 《印染》, no. 11, 30 November 2022 (2022-11-30), pages 69 - 73 * |
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