CN116377428A - Method for depositing continuous gradient film by surface dielectric barrier discharge - Google Patents
Method for depositing continuous gradient film by surface dielectric barrier discharge Download PDFInfo
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- CN116377428A CN116377428A CN202310333890.7A CN202310333890A CN116377428A CN 116377428 A CN116377428 A CN 116377428A CN 202310333890 A CN202310333890 A CN 202310333890A CN 116377428 A CN116377428 A CN 116377428A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000004888 barrier function Effects 0.000 title claims abstract description 23
- 238000000151 deposition Methods 0.000 title claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 57
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000003822 epoxy resin Substances 0.000 claims abstract description 27
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 27
- 229910052786 argon Inorganic materials 0.000 claims abstract description 22
- 230000004048 modification Effects 0.000 claims abstract description 19
- 238000012986 modification Methods 0.000 claims abstract description 19
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 13
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 13
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 10
- 239000004593 Epoxy Substances 0.000 claims abstract description 8
- 230000005587 bubbling Effects 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims description 16
- 230000005684 electric field Effects 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 12
- 230000009471 action Effects 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 22
- 239000012212 insulator Substances 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002715 modification method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010041 electrostatic spinning Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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Abstract
The invention discloses a method for depositing a continuous gradient film by surface dielectric barrier discharge, which comprises the following steps: step 1: placing an epoxy sample plate in a discharge region of a plasma reactor; step 2: taking argon as an air source, introducing medium polydimethylsiloxane into the mixed air cavity by a bubbling method, and introducing another path of independent argon into the mixed air cavity, wherein the argon and the medium are uniformly mixed in the mixed air cavity to form working gas; step 3: the working gas is continuously blown out to the discharge area of the plasma reactor from one side of the epoxy resin sample plate in parallel with the upper surface of the epoxy resin sample plate uniformly. The method can deposit a layer of continuous gradient film on the epoxy resin sample plate, the film is compact, the deposition effect in the horizontal direction is relatively uniform, the thickness of the film in the vertical direction is gradually reduced, and the electrical property of the insulating surface of the epoxy resin sample plate after surface modification is greatly improved.
Description
Technical Field
The invention relates to the technical field of insulating materials of high-voltage equipment, in particular to a method for depositing a continuous gradient film by surface dielectric barrier discharge.
Background
Currently, electricityForce systems are evolving towards large volumes, and far distances. Meanwhile, urban development in China enters a new stage, electricity demand is improved, a power transmission corridor is limited, and the traditional outdoor overhead power transmission line cannot meet the electricity demand. Meanwhile, the insulation performance of the overhead transmission line is extremely easy to be influenced by external factors, such as bad weather, temperature change and the like, so that the service life of equipment is greatly shortened. The gas-insulated power transmission line (Gas insulated transmission line, GIL) is a gas-insulated power transmission line made of sulfur hexafluoride (SF) 6 ) As insulating gas, the insulator and the closed pipeline are used as main bodies of the closed power transmission line, and the closed power transmission line is a power transmission method which can be set up underground and does not occupy ground surface resources. Compared with the traditional outdoor insulation, GIL has more excellent stability and can bear higher voltage class. However, the insulator of GIL is in a closed high-voltage working environment for a long time, and electric field distortion caused by mismatching of electric parameters of a gas-solid interface causes a large amount of charges to accumulate on the surface of the insulator, so that flashover accidents are caused, and insulation damage is caused. Therefore, in order to improve the insulating property thereof without deteriorating the original mechanical properties, it is necessary to perform a surface modification treatment.
Conventional surface modification methods are generally focused on improving the modification uniformity of macroscopic surfaces, and can improve the insulating properties of the material surface to some extent as compared to unmodified materials. However, uniform modification still cannot solve the problem of mismatch of electrical parameters of a gas-solid interface. Therefore, related scholars propose a surface gradient functional material, namely, a layer of functional gradient film is deposited on the surface of the material to enable electrical parameters (relative dielectric constant, conductivity and the like) of the surface of the material to change in a gradient manner, so that the effects of improving electric field distortion, accelerating charge dissipation and improving flashover voltage are achieved. The traditional surface gradient modification method comprises surface coating, magnetron sputtering, electrostatic spinning and the like. However, these methods generally can only achieve surface step gradients by means of differentiation, the preparation process is complex and expensive equipment such as vacuum pumps is required.
Basin-type insulator flexible gradient surface treatment method for extra-high voltage alternating current GIL disclosed in publication number CN111599553A, and a layer of phase is electrospun on the surface of an epoxy resin matrix by an electrostatic spinning methodPVA/BaTiO for gradient dielectric constant distribution 3 The film achieves the purposes of regulating and controlling the surface electric field and improving the electric resistance of the insulator. However, the method divides 5 areas and controls the processing time of different areas, belongs to discrete step gradient, causes discontinuous surface parameters and has longer processing period.
Preparation method of high-voltage GIL surface function gradient insulator disclosed in publication No. CN111462961A by using F 2 /N 2 The gas mixture is fluorinated to form a fluorinated layer with gradient thickness on the surface of the insulator, so that the insulator has surface conductivity with continuous gradient distribution. The method needs to use a vacuum pump, needs to flush and exhaust gas for multiple times, and also needs to treat residual gas after the treatment is finished, so that the process is complex and toxic substances are used.
Publication number CN109830347a discloses a rapid industrial treatment method for a surface function gradient insulator for high-voltage direct-current GIL. And controlling the treatment time by a plasma jet method to perform gradient time treatment on the high-voltage direct-current basin-type insulator, thereby obtaining the high-voltage direct-current basin-type insulator with the function gradient conductivity. This method requires masking other areas while processing one area, and the gradient formed is still discontinuous.
The research shows that the electric field homogenization effect of the surface continuous gradient is far superior to that of the step gradient, so that the energy-saving and efficient surface continuous gradient modification method is provided and has great significance. Plasma surface modification is currently a research hotspot in the field of surface modification, where surface dielectric barrier discharges can create a gradient plasma at the surface.
Therefore, the invention provides a method for depositing a continuous gradient film by surface dielectric barrier discharge aiming at the surface continuous gradient functionalization requirement, which utilizes the atmospheric pressure plasma driven by a nanosecond pulse excitation source to deposit the functional film on the surface of a material in a gradient manner, and improves the insulation performance of the material in a short time.
Disclosure of Invention
1. The technical problems to be solved are as follows:
aiming at the technical problems, the invention provides a method for depositing a continuous gradient film by surface dielectric barrier discharge.
2. The technical scheme is as follows:
a method for depositing a continuous gradient film by surface dielectric barrier discharge, comprising the following steps:
step 1: placing an epoxy sample plate in a discharge region of a plasma reactor;
step 2: taking argon as an air source, introducing medium polydimethylsiloxane into the mixed air cavity by a bubbling method, and introducing another path of independent argon into the mixed air cavity, wherein the argon and the medium are uniformly mixed in the mixed air cavity to form working gas;
step 3: continuously blowing working gas to a discharge area of the plasma reactor from one side of the epoxy resin sample plate in parallel with the upper surface of the epoxy resin sample plate uniformly;
step 4: the nanosecond pulse excitation source works, an electric field is generated in a discharge area of the plasma reactor, working gas generates plasma plumes under the action of the electric field, and a layer of continuous gradient film is deposited on the upper surface of the epoxy resin sample plate by the plasma plumes.
Preferably, the voltage amplitude of the nanosecond pulse excitation source is 8kV, and the power supply frequency is 1kHz.
Preferably, the argon flow rate of bringing the medium polydimethylsiloxane into the mixing cavity by a bubbling method is 13-15 mL/min, and the other path of independent argon flow rate is 1.8-2L/min.
Preferably, the nanosecond pulse excitation source starts to operate after the working gas is blown out for 1 min.
Preferably, the epoxy sample plate is deposited for a continuous gradient film of 5 minutes.
Preferably, the epoxy sample plate has a size of 100×100×1mm.
Preferably, the viscosity of the vehicle polydimethylsiloxane is 50cst.
More specifically, the method is based on a surface dielectric barrier discharge modification platform, the surface dielectric barrier discharge modification platform comprises an argon bottle, a gas mixing cavity and a plasma reactor, the argon bottle is connected with a two-way joint, the two-way joint is connected with two flow meters, one flow meter is directly connected with the gas mixing cavity, the other flow meter is connected with a reverse-absorption preventing bottle, the reverse-absorption preventing bottle is connected with a medium bottle, the medium bottle is connected with the gas mixing cavity, the gas flow rates of the two flow meters are controlled by a flow rate controller, the gas mixing cavity is connected with a porous gas inlet module of the plasma reactor, a gas outlet of the porous gas inlet module is opposite to a discharge area of the plasma reactor, working gas is uniformly blown out from the porous gas inlet module, the gas outlet position of the porous gas inlet module is slightly higher than the upper surface of an epoxy resin sample plate, and the plasma reactor is connected with a nanosecond pulse excitation source.
The working principle of the invention is as follows: when the nanosecond pulse excitation source works, an electric field is generated, the argon gas generates plasma under the action of the electric field, the plasma contains a large amount of active particles, and the active particles can crack the medium Polydimethylsiloxane (PDMS) into Si-O-Si and Si-CH 3 And (3) the silicon-containing active groups are shown in the formula (1) in the cracking process:
meanwhile, a large amount of active particles in the plasma bombard the surface of the epoxy resin sample plate, open O-H chemical bonds on one side of the epoxy resin, then graft and crosslink the silicon-containing active groups in the plasma with the epoxy resin under the action of discharge to form Si-O-Si polymer, the process is shown in formula 2,
working gas is uniformly blown out through the porous air inlet module, and the blown working gas forms plasma plumes under the action of an electric field and covers the upper surface of the epoxy resin sample plate; the method is influenced by the adsorption action and the deposition reaction of the surface of the material, the number of active particles in plasma and the concentration of silicon-containing active groups generated by PDMS cracking are gradually reduced along with the development of plasma plumes, and the reduction obeys the law of concentration boundary layer, namely, the number of active particles at the position closer to a porous air inlet module is more, the grafting and crosslinking reaction of the silicon-containing active groups is more sufficient, the formed film is thicker, the number of active particles at the position farther from the porous air inlet module is less along with the increase of the distance, the deposition effect is weakened, and the thickness of the film is reduced, so that the continuous gradient film deposition on the surface of the insulating material can be realized.
3. The beneficial effects are that:
(1) The method can deposit a layer of continuous gradient film on the epoxy resin sample plate, the film is compact, the deposition effect in the horizontal direction is relatively uniform, and the thickness of the film in the vertical direction is gradually reduced.
(2) The electrical property of the insulating surface of the epoxy resin sample plate subjected to surface modification by the method is greatly improved, the flashover voltage of an untreated sample plate is 8-9 kV, the flashover voltage of the sample plate after the traditional uniform thin film deposition treatment is improved to 11-12 kV, and the flashover voltage of the sample plate after the treatment by the method is further improved to 12-14 kV.
Drawings
FIG. 1 is a schematic illustration of a surface dielectric barrier discharge modification platform in accordance with an embodiment of the present invention;
FIG. 2 is a sample plate of epoxy resin prior to surface modification treatment in accordance with an embodiment of the present invention;
FIG. 3 is a sample plate of epoxy resin after surface modification treatment in accordance with an embodiment of the present invention.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
As shown in figures 1 to 3 of the drawings,
specific examples:
a method for depositing a continuous gradient film by surface dielectric barrier discharge, which is realized by a surface dielectric barrier discharge modification platform; as shown in fig. 1, the surface dielectric barrier discharge modification platform comprises an argon bottle 1, a gas mixing cavity 8 and a plasma reactor 9, wherein the argon bottle 1 is connected with a two-way joint 2, the two-way joint 2 is connected with a flowmeter A3 and a flowmeter B4, the flowmeter A3 is directly connected with the gas mixing cavity, the flowmeter B4 is connected with a reverse-absorbing bottle 6, the reverse-absorbing bottle 6 is connected with a medium bottle 7, the medium bottle 7 is connected with the gas mixing cavity, the gas flow rates of the flowmeter A3 and the flowmeter B4 are controlled by a flow rate controller 5, the gas mixing cavity 8 is connected with a porous gas inlet module 10 of the plasma reactor 9, the gas outlet of the porous gas inlet module 10 is opposite to the discharge area of the plasma reactor 9, and the plasma reactor 9 is connected with a nanosecond pulse excitation source 13;
the method comprises the following steps:
step 1: the epoxy resin sample plate 12 having a size of 100×100×1mm was correctly placed in the discharge region of the plasma reactor 9;
step 2: the pressure reducing valve of the argon bottle 1 is opened, argon is divided into two paths, one path enters the mixing cavity 8 through the flowmeter A3, the other path enters the medium bottle through the flowmeter B4, bubbling is formed to bring medium Polydimethylsiloxane (PDMS) into the mixing cavity 8, and the viscosity of the polydimethylsiloxane is 50cst. During operation, the flow rate of the flowmeter B4 is adjusted to 15mL/min, whether bubbles appear in the medium bottle 7 stably is observed, after the bubbles appear for 1min, the flow rate of the flowmeter A3 is adjusted to 2L/min, and two paths of gases are fully mixed in the gas mixing cavity 8 to form working gas;
step 3: continuously blowing out the working gas uniformly from one side of the epoxy resin sample plate 12 to the discharge area of the plasma reactor 9 in parallel to the upper surface of the epoxy resin sample plate 12 through the porous gas inlet module 10; the air outlet position of the porous air inlet module 10 is generally located slightly above the upper surface of the epoxy sample plate 12,
step 4: after the working gas is introduced for 1min, the nanosecond pulse excitation source works, the parameters are set to be 8kV in voltage amplitude and 1kHz in power frequency, an electric field is generated in a discharge area of the plasma reactor 9, the working gas generates a plasma plume 11 under the action of the electric field, and a continuous gradient film is deposited on the upper surface of the epoxy resin sample plate by the plasma plume 11 for 5min.
As shown in fig. 2, the surface of the epoxy resin sample plate before the treatment was smooth and flat without any undulation. As shown in fig. 3, after the surface modification treatment by the method of this embodiment, a white compact film with an area of about 80×80mm is produced on the surface of the epoxy resin sample plate, the deposition effect in the horizontal direction is relatively uniform, and the thickness density degree of the film in the vertical direction is gradually reduced, which illustrates that the method of this embodiment can deposit a layer of thickness gradient film on the surface of the material.
Further performing a surface flashover voltage performance test of the insulating material, and finding that the flashover voltage of an untreated sample plate is 8-9 kV, and increasing the flashover voltage of the sample plate to 11-12 kV after the traditional uniform film deposition treatment; the flashover voltage of the sample plate is further improved to 12-14 kV after the surface modification treatment by using the method provided by the invention, which shows that compared with the traditional uniformity modification method, the method provided by the embodiment is more effective in improving the electrical property of the insulating surface.
While the invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention, and it is intended that the scope of the invention shall be limited only by the claims appended hereto.
Claims (8)
1. A method for depositing a continuous gradient film by surface dielectric barrier discharge, comprising the steps of:
step 1: placing an epoxy sample plate in a discharge region of a plasma reactor;
step 2: taking argon as an air source, introducing medium polydimethylsiloxane into the mixed air cavity by a bubbling method, and introducing another path of independent argon into the mixed air cavity, wherein the argon and the medium are uniformly mixed in the mixed air cavity to form working gas;
step 3: continuously blowing working gas to a discharge area of the plasma reactor from one side of the epoxy resin sample plate in parallel with the upper surface of the epoxy resin sample plate uniformly;
step 4: the nanosecond pulse excitation source works, an electric field is generated in a discharge area of the plasma reactor, working gas generates plasma plumes under the action of the electric field, and a layer of continuous gradient film is deposited on the upper surface of the epoxy resin sample plate by the plasma plumes.
2. The method for depositing a continuous gradient film by surface dielectric barrier discharge according to claim 1, wherein the voltage amplitude of the nanosecond pulse excitation source is 8kV, and the power frequency is 1kHz.
3. The method for depositing the continuous gradient film by surface dielectric barrier discharge according to claim 1, wherein the argon flow rate of bringing the medium polydimethylsiloxane into the mixed air cavity by a bubbling method is 13-15 mL/min, and the other path of independent argon flow rate is 1.8-2L/min.
4. The method for depositing a continuous gradient film by surface dielectric barrier discharge as set forth in claim 1, wherein the nanosecond pulse excitation source is started after the working gas is blown out for 1 min.
5. The method for depositing a continuous gradient film by surface dielectric barrier discharge as set forth in any one of claims 2 to 4, wherein the time for depositing the continuous gradient film by the epoxy sample plate is 5min.
6. The method of depositing a continuous gradient film for surface dielectric barrier discharge as set forth in claim 5, wherein the size of the epoxy sample plate is 100 x 1mm.
7. The method of claim 6, wherein the medium polydimethylsiloxane has a viscosity of 50cst.
8. The method for depositing the continuous gradient film by surface dielectric barrier discharge according to claim 7, wherein the method is based on a surface dielectric barrier discharge modification platform, the surface dielectric barrier discharge modification platform comprises an argon bottle, a gas mixing cavity and a plasma reactor, the argon bottle is connected with a two-way joint, the two-way joint is connected with two flow meters, one flow meter is directly connected with the gas mixing cavity, the other flow meter is connected with a reverse-absorbing-preventing bottle, the reverse-absorbing-preventing bottle is connected with a medium bottle, the medium bottle is connected with the gas mixing cavity, the gas flow rates of the two flow meters are controlled by a flow rate controller, the gas mixing cavity is connected with a porous gas inlet module of the plasma reactor, a gas outlet of the porous gas inlet module is opposite to a discharge area of the plasma reactor, working gas is uniformly blown out from the porous gas inlet module, the gas outlet position of the porous gas inlet module is slightly higher than the upper surface of an epoxy resin sample plate, and the plasma reactor is connected with a nanosecond pulse excitation source.
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