CN116367696A - Piezoelectric device - Google Patents
Piezoelectric device Download PDFInfo
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- CN116367696A CN116367696A CN202111599640.5A CN202111599640A CN116367696A CN 116367696 A CN116367696 A CN 116367696A CN 202111599640 A CN202111599640 A CN 202111599640A CN 116367696 A CN116367696 A CN 116367696A
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Abstract
The present invention relates to a piezoelectric device. The piezoelectric device includes a piezoelectric element including an upper electrode, a lower electrode, and a single-layer piezoelectric layer sandwiched between the upper electrode and the lower electrode or two or more piezoelectric layers alternately laminated with an intermediate electrode interposed therebetween, a first protective layer laminated on the piezoelectric element, and a stress balance layer laminated on the first protective layer, wherein when a temperature is changed, thermal deformation of the first protective layer is larger than thermal deformation of the piezoelectric element, and thermal deformation of the stress balance layer is smaller than thermal deformation of the first protective layer. According to the present invention, a piezoelectric device can be provided that can effectively suppress occurrence of cracks or delamination of a piezoelectric element.
Description
Technical Field
The present invention relates to a piezoelectric device, and more particularly, to a piezoelectric device having a membrane structure or a cantilever structure for a mems.
Background
In recent years, piezoelectric elements capable of deforming when an electric field is applied are widely used as driving elements in various fields such as micro-electromechanical system structural ejection, micropump, micromirror, piezoelectric ultrasonic transducer, and the like. In order to protect the piezoelectric element, an organic thin film is generally provided as a protective layer over the piezoelectric element (for example, see US10965271B 2). In order to protect the piezoelectric element more reliably, there is a tendency that the thickness of the organic thin film becomes thicker.
However, since the organic thin film generally has a thermal expansion coefficient larger than that of the piezoelectric layer, when the thickness of the organic thin film becomes thicker, thermal deformation of the organic thin film may be significantly larger than thermal deformation of the piezoelectric element when the temperature is changed (for example, when the temperature is changed in a packaging process of a semiconductor such as a silicon wafer used for manufacturing a piezoelectric device), and there is a concern that a significant thermal stress is generated in the piezoelectric element, and cracking or interlayer peeling may occur in the piezoelectric element.
Prior art literature
Patent literature
Patent document 1: US10965271B2
Disclosure of Invention
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a piezoelectric device capable of effectively suppressing occurrence of cracks or delamination of a piezoelectric element.
In order to achieve the above object, a piezoelectric device according to an aspect of the present invention includes: a piezoelectric element including an upper electrode, a lower electrode, and a single piezoelectric layer or two or more piezoelectric layers sandwiched between the upper electrode and the lower electrode, the two or more piezoelectric layers being alternately laminated with an intermediate electrode interposed therebetween; a first protective layer laminated on the piezoelectric element; and a stress balance layer laminated on the first protection layer, wherein when the temperature changes, the thermal deformation of the first protection layer is larger than that of the piezoelectric element, and the thermal deformation of the stress balance layer is smaller than that of the first protection layer. By providing the stress balance layer with small thermal deformation in this way, thermal deformation of the first protective layer with large thermal deformation can be balanced in the direction opposite to the thermal deformation direction of the first protective layer, and thus thermal stress generated in the piezoelectric element due to the difference in thermal deformation between the first protective layer and the piezoelectric element can be effectively reduced. This effectively suppresses the occurrence of cracks and delamination in the piezoelectric element.
In the piezoelectric device according to the aspect of the present invention, the thickness of the first protective layer is preferably 2 to 2.5 times greater than the thickness of the piezoelectric element. In this case, the piezoelectric element can be more reliably protected by setting the thickness of the first protective layer to be relatively thick, and further, since the stress balance layer is provided on the first protective layer, even if the thickness of the first protective layer is relatively thick, suppression of occurrence of cracks or interlayer peeling of the piezoelectric element can be reliably achieved.
In the piezoelectric device according to the aspect of the present invention, it is preferable that the piezoelectric layer is made of a piezoelectric material having a small thermal expansion coefficient, the first protective layer is made of an organic material having a large thermal expansion coefficient, and the stress balance layer is made of an inorganic material having a small thermal expansion coefficient. By thus making the coefficient of thermal expansion of the material constituting the piezoelectric layer small, making the coefficient of thermal expansion of the material constituting the first protective layer large, and making the coefficient of thermal expansion of the material constituting the stress balancing layer small, it is possible to easily achieve that the thermal deformation of the first protective layer is larger than the thermal deformation of the piezoelectric element and the thermal deformation of the stress balancing layer is smaller than the thermal deformation of the first protective layer at the time of temperature change, whereby suppression of occurrence of cracks or delamination of the piezoelectric element can be easily achieved.
In the piezoelectric device according to the aspect of the present invention, it is preferable that the piezoelectric layer is made of a material having a general formula of Pb (Zr, ti) O 3 The first protective layer is composed of a polymer and the stress balancing layer is composed of a metal, a metal oxide, a metal nitride, a silicon oxide or a silicon nitride.
In the piezoelectric device according to the aspect of the present invention, the polymer is preferably at least one selected from Polyimide (PI) and polyethylene isobutyl ether (PVI), and the metal is preferably at least one selected from Ti and Ni.
In addition, the piezoelectric device according to the aspect of the present invention preferably further includes: and a second protective layer laminated on the stress balance layer. In this way, by further providing the second protective layer on the stress balance layer, the piezoelectric element can be more reliably protected, and since the stress balance layer is provided between the first protective layer and the second protective layer, even if the thermal deformation of the second protective layer is large, the thermal deformation can be balanced by the stress balance layer, and the occurrence of cracks or interlayer peeling of the piezoelectric element can be reliably suppressed.
In the piezoelectric device according to the aspect of the present invention, it is preferable that the second protective layer is made of an organic material having a large thermal expansion coefficient.
In the piezoelectric device according to the aspect of the present invention, it is preferable that the second protective layer is made of a polymer.
In the piezoelectric device according to the above aspect of the present invention, it is preferable that the thickness of the stress balance layer is set so that a difference in thermal deformation between the first protective layer and the piezoelectric element is substantially equal to a difference in thermal deformation between the stress balance layer and the first protective layer. By appropriately setting the thickness of the stress balance layer in accordance with the difference in thermal deformation between the first protection layer and the piezoelectric element and the difference in thermal deformation between the stress balance layer and the first protection layer in this way, it is possible to easily realize that the thermal deformation of the first protection layer is larger than the thermal deformation of the piezoelectric element and the thermal deformation of the stress balance layer is smaller than the thermal deformation of the first protection layer at the time of temperature change, whereby occurrence of cracks or interlayer peeling of the piezoelectric element can be more effectively suppressed.
According to one aspect of the present invention, a piezoelectric device capable of effectively suppressing occurrence of cracks or interlayer peeling of a piezoelectric element can be provided.
Drawings
Fig. 1 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a first embodiment.
Fig. 2 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a first modification of the first embodiment.
Fig. 3 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a second modification of the first embodiment.
Fig. 4 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a second embodiment.
Fig. 5 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a first modification of the second embodiment.
Fig. 6 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a second modification of the second embodiment.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same or corresponding elements are denoted by the same reference numerals, and redundant description thereof is omitted. In the following description, it should be understood that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship of the drawings, and are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or elements being referred to must have a specific azimuth or positional relationship or be constituted in a specific azimuth or positional relationship, and thus should not be construed as limiting the present invention.
(first embodiment)
Fig. 1 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a first embodiment. As shown in fig. 1, a piezoelectric device 1 according to the present embodiment has a film structure, is provided on a pair of substrates 2, and includes a piezoelectric element 10, a first protective layer 20, and a stress balance layer 30. The pair of substrates 2 are provided at a predetermined interval.
The substrate 2 is, for example, a silicon substrate, a Silicon On Insulator (SOI) substrate, a quartz glass substrate, a compound semiconductor substrate made of GaAs or the like, a sapphire substrate, a metal substrate made of stainless steel or the like, a MgO substrate, a SrTiO 3 A substrate, etc.
The piezoelectric element 10 is a laminate in which an upper electrode 101, a piezoelectric layer 102, and a lower electrode 103 are sequentially laminated from top to bottom along a lamination direction (thickness direction) Y. By applying an electric field to the piezoelectric layer 102 via the upper electrode 101 and the lower electrode 103, the piezoelectric element 10 can be deformed.
The upper electrode 101 and the lower electrode 103 are thin films each composed of a metal element (which may include Au, ag, pd, ir, ru, cu in addition to Pt) having Pt as a main component, for example. The upper electrode 101 is formed on the upper surface of the piezoelectric layer 102, and the lower electrode 103 is formed on the lower surface of the piezoelectric layer 102.
The piezoelectric layer 102 is sandwiched between the upper electrode 101 and the lower electrode 103, and is made of, for example, a material of the general formula Pb (Zr, ti) O 3 Represented by lead zirconate titanate (hereinafter also referred to as"PZT") and the like are formed in a thin film shape. That is, the piezoelectric layer 102 is made of a piezoelectric material having a small coefficient of thermal expansion. The piezoelectric layer 102 is an epitaxial film formed by epitaxial growth, and has a thickness of about 2 μm to 5 μm, for example. In addition, instead of PZT, a piezoelectric ceramic (a ferroelectric material in many cases) such as barium titanate or lead titanate, or a lead-free non-lead piezoelectric ceramic or the like may be used for the piezoelectric layer 102. The piezoelectric layer 102 may be a sputtered film formed by sputtering.
The first protective layer 20 is a layer for electrically insulating the piezoelectric element 10, improving the moisture resistance of the piezoelectric element 10, and improving the bending rigidity of the piezoelectric element 10. The first protective layer 20 is laminated on the piezoelectric element 10, specifically, is formed so as to cover the upper surface of the upper electrode 101.
The first protective layer 20 is composed of an organic substance having a large thermal expansion coefficient. For example, the first protective layer 20 may also be composed of a polymer. Here, as a specific example of the polymer, at least one selected from Polyimide (PI) and polyethylene isobutyl ether (PVI) may be used.
The stress balance layer 30 is laminated on the first protective layer 20, specifically, formed on the upper surface of the first protective layer 20. The stress balance layer 30 is made of an inorganic substance having a small thermal expansion coefficient. For example, the stress balance layer 30 may be made of metal, metal oxide, metal nitride, silicon oxide, or silicon nitride. Here, as a specific example of the metal, at least one selected from Ti and Ni may be used.
In the present embodiment, by making the coefficient of thermal expansion of the material constituting the piezoelectric layer 10 small, making the coefficient of thermal expansion of the material constituting the first protective layer 20 large, and making the coefficient of thermal expansion of the material constituting the stress balance layer 30 small as described above, it is possible to easily achieve that the thermal deformation of the first protective layer 20 is larger than the thermal deformation of the piezoelectric element 10 and the thermal deformation of the stress balance layer 30 is smaller than the thermal deformation of the first protective layer 20 at the time of temperature change, and thus it is possible to easily achieve suppression of occurrence of cracks or interlayer peeling of the piezoelectric element 10.
However, the constituent materials of the piezoelectric layer, the first protective layer, and the stress balance layer are not particularly limited as long as it is possible to achieve that the thermal deformation of the first protective layer is larger than that of the piezoelectric element and the thermal deformation of the stress balance layer is smaller than that of the first protective layer at the time of temperature change, and any materials may be used to constitute the piezoelectric layer, the first protective layer, and the stress balance layer, respectively.
In order to more reliably achieve an improvement in electrical insulation, moisture resistance, and bending rigidity of the piezoelectric element 10, the thickness of the first protective layer 20 may also be greater than 2 to 2.5 times the thickness of the piezoelectric element 10. In the present embodiment, the thickness of the first protective layer 20 is set to, for example, 10 to 60 μm. In this case, the piezoelectric element can be more reliably protected by setting the thickness of the first protective layer to be relatively thick, and further, since the stress balance layer is provided on the first protective layer, even if the thickness of the first protective layer is relatively thick, suppression of occurrence of cracks or interlayer peeling of the piezoelectric element can be reliably achieved.
The thickness of the stress balance layer 30 is set in such a manner that the difference in thermal deformation between the first protection layer 20 and the piezoelectric element 10 is substantially equal to the difference in thermal deformation between the stress balance layer 30 and the first protection layer 20. In the present embodiment, the thickness of the stress balance layer 30 is set to, for example, 10 to 500nm. By appropriately setting the thickness of the stress balance layer in accordance with the difference in thermal deformation between the first protection layer and the piezoelectric element and the difference in thermal deformation between the stress balance layer and the first protection layer in this way, it is possible to easily realize that the thermal deformation of the first protection layer is larger than the thermal deformation of the piezoelectric element and the thermal deformation of the stress balance layer is smaller than the thermal deformation of the first protection layer at the time of temperature change, whereby occurrence of cracks or interlayer peeling of the piezoelectric element can be more effectively suppressed.
However, the thickness of each of the piezoelectric layer, the first protective layer, and the stress balance layer is not particularly limited as long as it is possible to achieve that the thermal deformation of the first protective layer is larger than that of the piezoelectric element and the thermal deformation of the stress balance layer is smaller than that of the first protective layer when the temperature is changed.
In the present embodiment, the thermal deformation of the first protection layer 20 is larger than the thermal deformation of the piezoelectric element 10 and the thermal deformation of the stress balance layer 30 is smaller than the thermal deformation of the first protection layer 20 at the time of temperature change (for example, at the time of temperature change in the packaging process of a semiconductor such as a silicon wafer for manufacturing a piezoelectric device). By providing the stress balance layer with small thermal deformation in this way, thermal deformation of the first protective layer with large thermal deformation can be balanced in the direction opposite to the thermal deformation direction of the first protective layer, and thus thermal stress generated in the piezoelectric element due to the difference in thermal deformation between the first protective layer and the piezoelectric element can be effectively reduced. This effectively suppresses the occurrence of cracks and delamination in the piezoelectric element.
(first modification of the first embodiment)
Fig. 2 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a first modification of the first embodiment. The piezoelectric device 1A according to the present modification differs from the piezoelectric device 1 according to the first embodiment in that the piezoelectric device further includes a second protective layer 40 laminated on the stress balance layer 30. As shown in fig. 2, the second protective layer 40 is formed on the upper surface of the stress balance layer 30. In this way, by further providing the second protective layer on the stress balance layer, the piezoelectric element can be more reliably protected, and since the stress balance layer is provided between the first protective layer and the second protective layer, even if the thermal deformation of the second protective layer is large, the thermal deformation can be balanced by the stress balance layer, and the occurrence of cracks or interlayer peeling of the piezoelectric element can be reliably suppressed.
The second protective layer 40 may be made of an organic material having a large thermal expansion coefficient, similar to the first protective layer 20. For example, the second protective layer 40 may also be composed of a polymer. Here, as a specific example of the polymer, at least one selected from Polyimide (PI) and polyethylene isobutyl ether (PVI) may be used. In the present embodiment, the thickness of the second protective layer 40 is set to, for example, 10 to 60 μm.
(second modification of the first embodiment)
Fig. 3 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a second modification of the first embodiment. The piezoelectric device 1B according to the present modification differs from the piezoelectric device 1 according to the first embodiment in that the piezoelectric element includes two piezoelectric layers.
As shown in fig. 3, the piezoelectric device 1B according to the present modification includes a piezoelectric element 10A, and the piezoelectric element 10A is a laminated body in which an upper electrode 101, a piezoelectric layer 102, an intermediate electrode 104, a piezoelectric layer 102, and a lower electrode 103 are laminated in this order from top to bottom along a lamination direction (thickness direction) Y.
In the above-described embodiments and modifications, the piezoelectric element includes a single piezoelectric layer and the piezoelectric element includes two piezoelectric layers, but the piezoelectric element is not limited to this, and may include three or more piezoelectric layers alternately stacked with the intermediate electrode interposed therebetween.
(second embodiment)
Fig. 4 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a second embodiment. As shown in fig. 4, the piezoelectric device according to the present embodiment has a cantilever structure, and includes a pair of piezoelectric devices 1C provided separately. A piezoelectric device 1C is provided on a substrate 2.
The structure of the piezoelectric element 1C is substantially the same as that of the piezoelectric element 10 according to the first embodiment, and therefore, a description thereof is omitted here.
(first modification of the second embodiment)
Fig. 5 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a first modification of the second embodiment. As shown in fig. 5, the piezoelectric device according to the present modification is of a cantilever structure, and includes a pair of piezoelectric devices 1D provided separately. A piezoelectric device 1D is provided on a substrate 2.
The structure of the piezoelectric device 1D is substantially the same as that of the piezoelectric device 1A according to the first modification of the first embodiment, and therefore, the description thereof is omitted here.
(second modification of the second embodiment)
Fig. 6 is a schematic cross-sectional view showing a general structure of a piezoelectric device according to a second modification of the second embodiment. As shown in fig. 6, the piezoelectric device according to the present modification is of a cantilever structure, and includes a pair of piezoelectric devices 1E provided separately. A piezoelectric device 1E is provided on a substrate 2.
The structure of the piezoelectric device 1E is substantially the same as that of the piezoelectric device 1B according to the first modification of the first embodiment, and therefore, the description thereof is omitted here.
Examples
Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. These examples are merely illustrative of the present invention and are not intended to limit the present invention in any way.
Examples 1 to 4
First, a piezoelectric device including a piezoelectric element, a first protective layer, and a stress balance layer is prepared. Wherein, in example 1, the stress balance layer is composed of Ti, and the thickness thereof is 50nm; in example 2, the stress balance layer was made of silicon nitride (Si 3 N 4 ) A thickness of 100nm; in example 3, the stress balance layer was made of silicon nitride (Si 3 N 4 ) A thickness of 150nm; in example 4, the stress balance layer was made of silicon nitride (Si 3 N 4 ) The thickness of the composition was 200nm. Next, using the piezoelectric devices obtained in examples 1 to 4, the crack rate and the fracture rate of the piezoelectric element at a temperature of 100 ℃ were measured. Here, the crack rate indicates a rate at which cracks are generated in the piezoelectric element, and the fracture rate indicates a rate at which interlayer delamination occurs in the piezoelectric element. The results are shown in Table 1.
Comparative example 1
First, a piezoelectric device composed of only a piezoelectric element and a first protective layer is prepared. Next, using the piezoelectric device obtained in comparative example 1, the crack rate and the fracture rate of the piezoelectric element at a temperature of 100 ℃ were measured. The results are shown in Table 1.
TABLE 1
| Material of stress balance layer | Thickness of stress balance layer | Crack rate | Fracture rate | |
| Example 1 | Ti | 50nm | 0.18％ | 0.72％ |
| Example 2 | Si 3 N 4 | 100nm | 0.93％ | 0.31％ |
| Example 3 | Si 3 N 4 | 150nm | 2.61％ | 1.00％ |
| Example 4 | Si 3 N 4 | 200nm | 0.42％ | 0.00％ |
| Comparative example 1 | / | / | 26.60％ | 66.80％ |
As is clear from table 1 above, the occurrence of cracks and delamination of the piezoelectric element can be effectively suppressed by providing the stress balance layer with small thermal deformation. Specifically, in comparative example 1, the crack rate of the piezoelectric element was 26.60%, the fracture rate was 66.80%, and the crack rate and the fracture rate of the piezoelectric element were both large, whereas in examples 1 to 4, the crack rate and the fracture rate of the piezoelectric element were both small.
While the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and modifications and variations may be made as necessary by those skilled in the art without departing from the true spirit and scope of the present invention. Such modifications and variations are intended to fall within the scope of the present invention.
Claims (10)
1. A piezoelectric device, wherein,
comprising the following steps:
a piezoelectric element including an upper electrode, a lower electrode, and a single piezoelectric layer or two or more piezoelectric layers sandwiched between the upper electrode and the lower electrode, the two or more piezoelectric layers being alternately laminated with an intermediate electrode interposed therebetween;
a first protective layer laminated on the piezoelectric element; a kind of electronic device with high-pressure air-conditioning system
A stress balance layer laminated on the first protective layer,
and when the temperature is changed, the thermal deformation of the first protective layer is larger than that of the piezoelectric element, and the thermal deformation of the stress balance layer is smaller than that of the first protective layer.
2. The piezoelectric device according to claim 1, wherein,
the thickness of the first protective layer is 2-2.5 times greater than that of the piezoelectric element.
3. The piezoelectric device according to claim 1 or 2, wherein,
the piezoelectric layer is made of a piezoelectric material having a small coefficient of thermal expansion,
the first protective layer is composed of an organic substance having a large thermal expansion coefficient,
the stress balance layer is made of an inorganic substance having a small thermal expansion coefficient.
4. The piezoelectric device according to claim 3, wherein,
the piezoelectric layer is composed of a material having the general formula Pb (Zr, ti) O 3 The lead zirconate titanate (PZT) is shown to be formed,
the first protective layer is composed of a polymer,
the stress balancing layer is composed of a metal, a metal oxide, a metal nitride, a silicon oxide or a silicon nitride.
5. The piezoelectric device according to claim 4, wherein,
the polymer is at least any one selected from Polyimide (PI) and polyethylene isobutyl ether (PVI),
the metal is at least one selected from Ti and Ni.
6. The piezoelectric device according to any one of claims 1 to 5, wherein,
further comprises: and a second protective layer laminated on the stress balance layer.
7. The piezoelectric device according to claim 6, wherein,
the second protective layer is composed of an organic substance having a large thermal expansion coefficient.
8. The piezoelectric device according to claim 7, wherein,
the second protective layer is composed of a polymer.
9. The piezoelectric device according to claim 8, wherein,
the polymer is at least any one selected from Polyimide (PI) and polyethylene isobutyl ether (PVI).
10. The piezoelectric device according to any one of claims 1 to 9, wherein,
the thickness of the stress balance layer is set in such a manner that the difference in thermal deformation between the first protection layer and the piezoelectric element is substantially equal to the difference in thermal deformation between the stress balance layer and the first protection layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111599640.5A CN116367696A (en) | 2021-12-24 | 2021-12-24 | Piezoelectric device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111599640.5A CN116367696A (en) | 2021-12-24 | 2021-12-24 | Piezoelectric device |
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| CN116367696A true CN116367696A (en) | 2023-06-30 |
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