CN116365358A - High-speed picosecond pulse laser driving circuit based on radio frequency triode - Google Patents
High-speed picosecond pulse laser driving circuit based on radio frequency triode Download PDFInfo
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- CN116365358A CN116365358A CN202111613155.9A CN202111613155A CN116365358A CN 116365358 A CN116365358 A CN 116365358A CN 202111613155 A CN202111613155 A CN 202111613155A CN 116365358 A CN116365358 A CN 116365358A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
Abstract
The invention provides a high-speed picosecond pulse laser driving circuit based on a radio frequency triode, which comprises a signal generator, a high-speed level converter, a radio frequency triode Q2 and a DFB laser, wherein the signal generator generates a narrow pulse signal driven by the laser, and the narrow pulse signal is converted into an ECL level through the high-speed level converter to drive the radio frequency triode Q2 for driving the DFB laser to emit light. The invention has the advantages that: compared with a high-speed current source driving chip, the high-speed level converter is more universal, so that the high-speed current source driving chip has more cost advantages, in addition, the DAC is required to additionally provide one path of output regulation driving current, and the high-speed level converter is not required and has more cost advantages.
Description
Technical Field
The invention relates to a driving circuit, in particular to a high-speed picosecond pulse laser driving circuit for a quantum communication single photon source.
Background
In semiconductor lasers, direct modulation is generally used, and the DFB laser is modulated to generate optical pulses using the gain switching principle. Specifically, a semiconductor laser is driven from below a threshold current by utilizing a narrow pulse current, and the width and the amplitude of the narrow pulse current are adjusted to only take the first peak in the relaxation oscillation process and inhibit the rest oscillation, so that the ultra-short light pulse is obtained.
As shown in fig. 1, a published patent CN201720945107, a laser high-speed driving module for quantum communication single photon source provides a high-speed picosecond pulse laser driving system, in which the scheme includes a high-speed current source driving chip U1, a triode Q1 and a laser diode LD, the collector of the triode Q1 is connected with the cathode of the laser diode LD, the anode of the laser diode LD is connected with a power VCC, the current source driving chip U1 converts an externally input narrow pulse voltage signal into a corresponding narrow pulse current signal to output, and at the same time, the current signal controls the switch of the triode Q1, and further controls the switch of the laser diode LD, thereby obtaining high-speed picosecond pulse light.
In a standard 14PIN butterfly package laser, the + PIN of the light emitting laser diode LD is typically connected to the package. The butterfly-shaped packaging laser tube shell is grounded, so that external interference can be well shielded, and an internal laser chip, a semiconductor refrigerating sheet and a backlight power diode are protected. The +pin of the light-emitting laser diode LD in the above patent proposal is connected with the power supply VCC, and the shielding effect cannot be realized. The butterfly-shaped packaged laser is large in size, the shell is exposed outside in a large area, and short circuit is easy to occur in an actual circuit board.
The high-speed current source driving chip needs an additional DAC channel to set driving current for driving, and the driving current is used for adjusting static parameters of the triode, so that configuration items of the circuit are increased. At the same time, the driving current of the high-speed current source driving chip and the amplification factor H of the triode FE The temperature is inevitably affected, so that the laser diode LD driving current changes, and finally the stability of the output power of the laser diode LD at high and low temperatures is affected.
In addition, the high-speed current source driving chip required by the prior art scheme has fewer selectable device types, does not have compatibility and replaceability, and has higher single-device cost.
Disclosure of Invention
The invention aims to solve the technical problem of realizing a better shielding effect on the internal devices of the laser under the condition of low cost in a high-speed picosecond pulse laser driving circuit.
The invention solves the technical problems by the following technical means: the invention provides a high-speed picosecond pulse laser driving circuit based on a radio frequency triode, which comprises a signal generator, a high-speed level converter, a radio frequency triode Q2 and a DFB laser, wherein the signal generator generates a narrow pulse signal driven by the laser, and the narrow pulse signal is converted into an ECL level through the high-speed level converter to drive the radio frequency triode Q2 for driving the DFB laser to emit light.
As a further optimized technical scheme, the output end of the signal generator is connected with the input end of the high-speed level converter, the output end of the high-speed level converter is connected with the base B of the radio-frequency triode Q2, the emitter E of the radio-frequency triode Q2 is connected with the potential VE, and the collector C of the radio-frequency triode Q2 is connected with the DFB laser.
As a further optimized technical scheme, the DFB laser includes a light emitting laser diode LD, a resistor R20 and an inductor L, one end of the resistor R20 is connected with the collector C of the radio frequency triode Q2, the other end of the resistor R20 is connected with one end of the inductor L, the other end of the inductor L is connected with a direct current negative electrode DC-, the negative electrode of the light emitting laser diode LD is connected between the resistor R20 and the inductor L, and the positive electrode ld+ of the light emitting laser diode LD is grounded.
As a further optimized technical scheme, when the output of the high-speed level converter is low level, the radio frequency triode Q2 is cut off, and the DFB laser emits light and does not emit light; when the high-speed level converter outputs high level, the radio frequency triode Q2 is conducted, and the DFB laser emits light.
As a further optimized technical scheme, a resistor R10 is connected between the base B and the emitter E of the radio frequency triode Q2.
As a further optimized technical solution, the high-speed level converter is powered by a negative power supply, that is, vcc=0v, vee= -3.3V, and the voltage of the potential VE is VCC-2 v= -2V.
As a further optimized solution, the potential VE of the emitter E of the radiofrequency transistor Q2 introduces a temperature compensation circuit.
As a further optimized technical scheme, the temperature compensation circuit comprises a follower amplifier OPA1, a homodromous proportional amplifier OPA2, a resistor R30, a resistor R40, a resistor NTC, a resistor R50, a resistor R60, a resistor R70 and a resistor R80, wherein the resistors R30 and R40 are arranged in series to divide the voltage of a power supply VEE in a voltage divider mode, a voltage dividing node M is connected with the homodromous input end of the follower amplifier OPA1, the reverse input end of the follower amplifier OPA1 is connected with an output to form a follower circuit, the NTC resistor and the resistor R60 are connected in parallel and then are connected with the resistor R70 in series to divide the voltage of the output Vo of the operational amplifier, a voltage dividing node N is connected with the homodromous input end of the homodromous proportional amplifier OPA2, the reverse input end of the operational amplifier is grounded to the resistor R50, and the output is connected with an indirect resistor R80 to form the homodromous amplifying circuit, and the output end of the homodromous proportional amplifier OPA2 is connected with the emitter of a radio-frequency triode Q2.
As a further optimized technical scheme, the radio frequency triode Q2 is based on a SiGe process, and the cut-off frequency ft >37GHz.
As a further optimized technical scheme, the radio frequency triode Q2 is assembled into the DFB laser in a die integration mode.
The invention has the advantages that:
1. compared with a high-speed current source driving chip, the high-speed level converter is more universal, so that the high-speed current source driving chip has more cost advantages, in addition, the DAC is required to additionally provide one path of output regulation driving current, and the high-speed level converter is not required, so that the high-speed current source driving chip has more cost advantages;
2. according to the scheme, the LED LD+ is grounded, so that the shielding effect on the internal devices of the laser can be achieved, and the problem of short circuit of the laser tube shell due to foreign matters is avoided;
3. introducing an open loop compensation circuit to emitter potential of the triode to realize stability of output power of the laser at high and low temperatures, wherein compensation network parameters can be fitted according to temperature drift characteristics of circuit devices;
the radio frequency triode based on the SiGe and with more than the sixth generation process is selected, so that the cut-off frequency is high, the high-low frequency signals of the level are better reserved, and the amplification distortion condition of the signals is reduced;
5. the radio frequency triode can be assembled into the butterfly laser in a bare chip integration mode, so that parasitic parameters are further reduced, the working frequency of a circuit is improved, a driving interface is a standard NECL level, and the compatibility is strong.
Drawings
FIG. 1 is a schematic diagram of a laser high-speed drive module of a prior art quantum communication single photon source;
FIG. 2 is a schematic diagram of a high-speed picosecond pulse laser driving circuit based on a radio frequency triode according to an embodiment of the present invention;
FIG. 3 is a circuit diagram of temperature compensation of potential VE in an embodiment of the invention;
fig. 4 shows the comparison of the output spectra of the laser at different temperatures before and after the introduction of the compensation circuit in the embodiment of the present invention, fig. 4a is the spectrum before the introduction of the compensation, and fig. 4b is the spectrum after the introduction of the compensation.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described in the following in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 2 is a schematic diagram of a high-speed picosecond pulse laser driving circuit based on a radio frequency triode according to an embodiment of the present invention, where the high-speed picosecond pulse laser driving circuit based on a radio frequency triode according to an embodiment of the present invention includes a signal generator, a high-speed level shifter, a radio frequency triode Q2, and a DFB laser. The high speed level shifter is an ECL (Emitter-coupled Logic) level shifter.
The output end of the signal generator is connected with the input end of the high-speed level converter.
The output end of the high-speed level shifter is connected with the base electrode B of the radio-frequency triode Q2, and the high-speed level shifter is powered by a negative power supply, namely VCC=0V and VEE= -3.3V. The emitter E of the radio frequency triode Q2 is connected with the potential VE, the collector C of the radio frequency triode Q2 is connected with the DFB laser, and the resistor R10 is connected between the base B and the emitter E of the radio frequency triode Q2.
The DFB laser includes a light emitting laser diode LD, a resistor R20, and an inductance L. One end of a resistor R20 is connected with a collector C of the radio-frequency triode Q2, the other end of the resistor R20 is connected with one end of an inductor L, the other end of the inductor L is connected with a direct current negative electrode DC-, the negative electrode of a light-emitting laser diode LD is connected between the resistor R20 and the inductor L, and the positive electrode LD of the light-emitting laser diode LD is grounded.
The signal generator generates a narrow pulse signal driven by the laser, and converts the narrow pulse signal into ECL level through the high-speed level converter, and drives the radio frequency triode Q2 for driving the DFB laser to emit light. The high-speed level shifter output is connected to the base of transistor Q2 and to the emitter of transistor Q2 through resistor R20. In this embodiment, the high-speed level shifter is powered by a negative power supply, i.e., vcc=0v, vee= -3.3V. The resistor R20 is a 50 ohm resistor, and the voltage of VE is VCC-2 V= -2V. Typical values of high-speed level shifter output: high level voh=vcc-1 v= -1V, low level vol=vcc-1.8 v= -1.8V. When the output of the high-speed level converter is low level, the radio frequency triode Q2 is cut off, and the light-emitting laser diode LD does not emit light; when the output of the high-speed level converter is high level, the radio frequency triode Q2 is conducted, and the light-emitting laser diode LD emits light. The radio frequency triode Q2 is controlled by a driving signal output by the high-speed level shifter.
On the other hand, due to the amplification factor H of the triode FE The driving current of the DFB laser is changed due to the unavoidable influence of high and low temperatures, and finally, the stability of the output power of the DFB laser at the high and low temperatures is influenced. By carefully fitting the temperature drift characteristics of the laser driving current at high and low temperatures, a temperature compensation circuit is introduced into the potential VE of the emitter E of the triode Q2, so that the stability of the DFB laser driving current at high and low temperatures is realized, and the DFB laser is ensuredThe output power of the optical device is stable.
As shown in fig. 3, the temperature compensation circuit of the potential VE includes a follower amplifier OPA1, a homodromous proportional amplifier OPA2, a resistor R30, a resistor R40, a resistor NTC, a resistor R50, a resistor R60, a resistor R70, and a resistor R80, wherein the resistors R30 and R40 are configured in series to divide the voltage of the power supply VEE in the form of a voltage divider, and a voltage dividing node M is connected to the homodromous input end of the follower amplifier OPA1, and the reverse input end of the follower amplifier OPA1 is connected to the output to form a follower circuit. The NTC resistor and the resistor R60 are connected in parallel and then connected in series with the resistor R70 to be configured into a voltage divider to divide the output Vo of the following amplifier OPA1, the voltage dividing node N is connected with the homodromous input end of the homodromous proportional amplifier OPA2, the reverse input end of the homodromous proportional amplifier OPA2 is connected with the resistor R50 in a grounding mode, and the resistor R80 and the output indirect resistor form a homodromous amplifying circuit, and the output end of the homodromous proportional amplifier OPA2 is connected with the emitter of the radio-frequency triode Q2.
The temperature compensation principle is as follows: in the temperature compensation circuit, the follower amplifier OPA1 outputs vo=vee×r30/(r30+r40), and the homodromous amplifier OPA2 outputs ve=vo×r70/(r70+r60// R NTC )*(1+R80/R50)。
With the rise of temperature, the amplification factor H of the radio frequency triode Q2 FE Increasing, DFB laser drive current increases (rf triode Q2 collector current increases, ic=h with constant rf triode Q2 base current Ib FE * Ib). After the temperature compensation circuit is introduced, the temperature rises, the resistance value of the NTC resistor is reduced, the absolute value of the output VE of the homodromous proportional amplifier OPA2 is reduced (the power supply voltage of the collector electrode of the radio frequency triode Q2 is reduced), and the driving current of the DFB laser is also reduced. It can be seen that the influence trend of the compensation circuit on the DFB laser driving current and the amplification factor H of the radio frequency triode Q2 during the temperature change FE On the contrary. If the compensation coefficient is properly introduced, the stability of the driving current of the DFB laser can be realized. Fig. 4 shows the comparison of the laser output spectra at different temperatures before and after the introduction of the compensation circuit, fig. 4a is the spectrum before the introduction of the compensation, fig. 4b is the spectrum after the introduction of the compensation, and different Trace represents the spectrum at different temperatures. It can be seen that after the compensation circuit is introduced, the DFB output spectrum overlap ratio is higher and the output power difference is smaller at each temperature. Excellent (excellent)Optionally, the radio frequency triode Q2 is based on SiGe technology, and has a cut-off frequency ft>And the 37GHz high-low frequency signals of the level are better reserved, and the amplification distortion condition of the signals is reduced.
Preferably, the radio frequency triode Q2 can be assembled into the DFB laser in a die integration mode, so that parasitic parameters are further reduced, the working frequency of a circuit is improved, a driving interface is a standard ECL level, and the compatibility is strong.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A high-speed picosecond pulse laser driving circuit based on a radio frequency triode is characterized in that: the laser comprises a signal generator, a high-speed level converter, a radio frequency triode Q2 and a DFB laser, wherein the signal generator generates a narrow pulse signal driven by the laser, the narrow pulse signal is converted into an ECL level through the high-speed level converter, and the radio frequency triode Q2 is driven to drive the DFB laser to emit light.
2. The radio frequency triode based high speed picosecond pulse laser driver circuit of claim 1, wherein: the output end of the signal generator is connected with the input end of the high-speed level converter, the output end of the high-speed level converter is connected with the base B of the radio-frequency triode Q2, the emitter E of the radio-frequency triode Q2 is connected with the potential VE, and the collector C of the radio-frequency triode Q2 is connected with the DFB laser.
3. The radio frequency triode based high speed picosecond pulse laser driver circuit of claim 2, wherein: the DFB laser comprises a light-emitting laser diode LD, a resistor R20 and an inductor L, wherein one end of the resistor R20 is connected with a collector C of the radio-frequency triode Q2, the other end of the resistor R20 is connected with one end of the inductor L, the other end of the inductor L is connected with a direct-current negative electrode DC-, the negative electrode of the light-emitting laser diode LD is connected between the resistor R20 and the inductor L, and the positive electrode LD+ of the light-emitting laser diode LD is grounded.
4. A radio frequency triode based high speed picosecond pulse laser driver circuit according to any one of claims 1-3, wherein: when the output of the high-speed level converter is low level, the radio frequency triode Q2 is cut off, and the DFB laser does not emit light; when the high-speed level converter outputs high level, the radio frequency triode Q2 is conducted, and the DFB laser emits light.
5. The radio frequency triode based high speed picosecond pulse laser driver circuit of claim 2, wherein: resistor R10 is connected between base B and emitter E of the rf transistor Q2.
6. The radio frequency triode based high speed picosecond pulse laser driver circuit of claim 2, wherein: the high-speed level converter is powered by a negative power supply, namely VCC=0V, VEE= -3.3V, and the voltage of the potential VE is VCC-2 V= -2V.
7. The radio frequency triode based high speed picosecond pulse laser driver circuit of claim 2, wherein: the potential VE of the emitter E of the radio-frequency transistor Q2 introduces a temperature compensation circuit.
8. The rf triode-based high-speed picosecond pulse laser driver circuit of claim 7, wherein: the temperature compensation circuit comprises a following amplifier OPA1, a homodromous proportional amplifier OPA2, a resistor R30, a resistor R40, a resistor NTC, a resistor R50, a resistor R60, a resistor R70 and a resistor R80, wherein the resistors R30 and R40 are serially arranged to divide a power supply VEE in a voltage divider mode, a voltage dividing node M is connected with the homodromous input end of the following amplifier OPA1, the reverse input end of the following amplifier OPA1 is connected with an output to form the following circuit, the NTC resistor and the resistor R60 are serially connected with the resistor R70 after being parallelly connected to form the following circuit, the voltage dividing node N is connected with the homodromous input end of the homodromous proportional amplifier OPA2 to divide the voltage of the operational amplifier, the reverse input end of the operational amplifier is grounded to the resistor R50, and the output indirect resistor R80 are connected with the output end of the homodromous proportional amplifier OPA2 to form the emitter of the radio frequency triode Q2.
9. The radio frequency triode based high speed picosecond pulse laser driver circuit of claim 1, wherein: the radio frequency triode Q2 is based on a SiGe process, and the cut-off frequency ft is greater than 37GHz.
10. The radio frequency triode based high speed picosecond pulse laser driver circuit of claim 1, wherein: the radio frequency triode Q2 is assembled into the DFB laser in a die integration mode.
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| CN202111613155.9A CN116365358A (en) | 2021-12-27 | 2021-12-27 | High-speed picosecond pulse laser driving circuit based on radio frequency triode |
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| CN202111613155.9A CN116365358A (en) | 2021-12-27 | 2021-12-27 | High-speed picosecond pulse laser driving circuit based on radio frequency triode |
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