CN116344630A - Window layer of solar cell, solar cell and preparation method of solar cell - Google Patents

Window layer of solar cell, solar cell and preparation method of solar cell Download PDF

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CN116344630A
CN116344630A CN202111598245.5A CN202111598245A CN116344630A CN 116344630 A CN116344630 A CN 116344630A CN 202111598245 A CN202111598245 A CN 202111598245A CN 116344630 A CN116344630 A CN 116344630A
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solar cell
layer
substrate
type
window layer
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李佳
刘勇
杨苗
汝小宁
曲铭浩
徐希翔
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Xian Longi Solar Technology Co Ltd
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Xian Longi Solar Technology Co Ltd
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Priority to PCT/CN2022/092267 priority patent/WO2023115787A1/en
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Abstract

The invention discloses a window layer of a solar cell, the solar cell and a preparation method thereof. Relates to the field of solar cell manufacturing, and solves the problem of poor conductivity and crystallization stability of a window layer. The window layer of the solar cell is an N-type hydrogenated silicon oxycarbide film with a chemical formula of nc-SiO x C y H is a nanocrystalline state, wherein the range of the nonstoichiometric ratio x is 0.1-0.5, and the range of the nonstoichiometric ratio y is 0.25-1. The nano crystalline N-type hydrogenated silicon oxycarbide film has better crystallinity and conductivity and wide optical band gap. The window layer of the solar cell can improve photoelectric conversion efficiency. Solar energy electricityThe window layer preparation method of the cell is used for preparing the window layer, and the solar cell preparation method is used for preparing the solar cell.

Description

Window layer of solar cell, solar cell and preparation method of solar cell
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a window layer of a solar cell, the solar cell and a preparation method thereof.
Background
Nanocrystalline silicon has been widely used in solar cells for the past decade due to its excellent photoelectric properties, such as high conductivity, tunable optical bandgap, good stability. The hydrogenated nanocrystalline silicon film formed by doping O atoms or C atoms into various nanocrystalline silicon films is a promising material for constructing a window layer of a solar cell.
Currently, silicon heterojunction solar cells are mainly manufactured by introducing SiH into a process chamber 4 、H 2 、CO 2 、PH 3 To prepare phosphorus doped N-type nc-SiO x H film as window layer due to SiO x The matrix has a higher barrier height, which enables nc-SiO to be formed x The H film has higher resistivity, is unfavorable for collecting carriers in the solar cell, and has poor conductivity. nc-SiC x H film as window layer, and SiO x SiC compared with the matrix x Although the matrix has higher carrier mobility, siC x The length and polarity of Si-Si bond in the matrix are low, so that the nanocrystalline silicon is in SiC x Phase separation and accumulation in the matrix are difficult and crystallinity is poor.
Disclosure of Invention
The invention aims to provide a window layer of a solar cell, the solar cell and a preparation method thereof, so as to improve the conductivity and crystallization stability of a film.
In a first aspect, the present invention provides a method ofThe window layer of the solar cell is an N-type hydrogenated silicon oxycarbide film, and the chemical formula of the N-type hydrogenated silicon oxycarbide film is nc-SiO x C y H is a nanocrystalline state, wherein the range of the nonstoichiometric ratio x is 0.1-0.5, and the range of the nonstoichiometric ratio y is 0.25-1.
By adopting the technical scheme, the window layer of the solar cell is a nanocrystalline N-type hydrogenated silicon oxycarbide film formed by simultaneously doping oxygen atoms and carbon atoms into the nanocrystalline silicon film, and the nanocrystalline N-type hydrogenated silicon oxycarbide film is fused with SiO x Matrix and SiC y Advantages of the matrix, where SiO x The matrix can realize optimal thermodynamic phase separation and has high amorphous phase stability at high temperature; siC (SiC) y The matrix has higher carrier mobility and high conductivity. Therefore, the nano crystalline N-type hydrogenated silicon oxycarbide film has better crystallinity and conductivity, and has wide optical band gap, so that the nano crystalline N-type hydrogenated silicon oxycarbide film can be used as a window layer of a solar cell to better improve the photoelectric conversion efficiency.
In a second aspect, the present invention further provides a method for preparing a window layer of a solar cell, including:
providing a substrate;
and depositing an N-type hydrogenated silicon oxycarbide film on the first surface of the substrate by using a Hot Wire Chemical Vapor Deposition (HWCVD) method, wherein the N-type hydrogenated silicon oxycarbide film forms the window layer.
When the technical scheme is adopted, the N-type hydrogenated silicon oxycarbide film is formed on the first surface of the substrate by a hot wire chemical vapor deposition method to form a window layer of the solar cell, and the hot wire chemical vapor deposition method is to form free radicals on the substrate to form a film by using a hot wire high-temperature catalysis process; the dissociation efficiency of the hot filament chemical vapor deposition method to the process gas is higher, and the hot filament chemical vapor deposition method can more easily lead the process gas to containThe N-type hydrogenated silicon oxycarbide film prepared by the gas dissociation of carbon atoms has higher crystallization rate and does not need a large amount of H 2 The cost is very low; the hot wire chemical vapor deposition method has simple process, higher film doping efficiency and no need of additional heat treatment process.
Alternatively, in the window layer preparation method described above, the precursor gas for forming the N-type hydrogenated silicon oxycarbide film includes a silicon source gas, a hydrogen source gas, an oxygen source gas, a carbon source gas, and a nitrogen source gas. By the arrangement, the N-type hydrogenated silicon oxycarbide film is prepared in one step by the precursor gas containing silicon atoms, hydrogen atoms, oxygen atoms, carbon atoms and nitrogen atoms, so that high conductivity is obtained.
Optionally, in the method for preparing a window layer, the oxygen source gas includes N 2 O. So arranged that the precursor gas passes through N 2 O can provide oxygen atoms and nitrogen atoms simultaneously, and reduces the variety of gases, thereby reducing the storage cost of the gases.
Optionally, in the thin film manufacturing method described above, the nitrogen source gas includes N 2 。
By adopting the technical scheme, the method comprises the following steps of 2 Providing nitrogen atoms, doping N 2 Due to the fact that the process chamber contains trace N 2 N can be completely added at high temperature of the hot wire 2 Catalytic dissociation, N 2 Has the same doping effect as that of phosphane, so that the introduction of extra impurity gas is avoided, and N 2 Wide source, no toxicity, no harm and no pollution.
Optionally, in the method for preparing a window layer, before forming the N-type hydrogenated silicon oxycarbide film, the method further includes the steps of: an amorphous silicon thin film is formed on at least one surface of the substrate. The arrangement is beneficial to improving the passivation effect of the substrate.
Optionally, in the method for preparing a window layer, before forming the N-type hydrogenated silicon oxycarbide film, the method further includes the steps of: and forming a seed layer on the first surface of the substrate by using a silicon source gas and a hydrogen source gas through a hot filament chemical vapor deposition method. By adopting the technical scheme, a seed layer is deposited on the substrate before the N-type hydrogenated silicon oxycarbide film is prepared. By arranging the seed layer, nucleation points on the substrate are increased, and the deposition growth of the N-type hydrogenated silicon oxycarbide film is facilitated.
In a third aspect, the present invention also provides a method for preparing a solar cell, comprising a method for preparing a window layer as defined in any one of the above.
The preparation method of the solar cell has the same beneficial effects as the preparation method of the thin film because the preparation method of the window layer in the application is adopted, and the detailed description is omitted.
Optionally, in the method for manufacturing a solar cell, the substrate is N-type, and further includes the steps of:
forming a P-type emitter layer on the second surface of the substrate;
forming transparent conductive layers on the surfaces of the N-type hydrogenated silicon oxycarbide film and the P-type emitter layer; and
and forming metal electrodes on the surfaces of the transparent conductive layers positioned on the first surface and the second surface.
By adopting the technical scheme, the N-type hydrogenated silicon oxycarbide film is used as a window layer of the solar cell, has higher conductivity and wider optical band gap, and improves the performance of the solar cell.
In a fourth aspect, the present invention also provides a solar cell comprising:
an N-type substrate; and
the N-type hydrogenated silicon oxycarbide film is formed on the first surface of the substrate and is used as the window layer.
By adopting the technical scheme, the N-type hydrogenated silicon oxycarbide film of the solar cell adopts the nano crystalline hydrogenated silicon oxycarbide film as the window layer of the solar cell, so that the N-type hydrogenated silicon oxycarbide film has the same beneficial effects as the hydrogenated silicon oxycarbide film and is not described in detail herein.
Optionally, in the solar cell described above, the method further includes:
a P-type emitter layer formed on the second surface of the substrate;
transparent conductive layers respectively formed on the N-type hydrogenated silicon oxycarbide film and the P-type emitter layer; and
and a metal electrode formed on the transparent conductive layer.
By adopting the technical scheme, the solar cell is a silicon heterojunction cell.
Optionally, in the solar cell, a passivation layer is disposed between the first surface of the substrate and the N-type hydrogenated silicon oxycarbide film, and/or a passivation layer is disposed between the second surface of the substrate and the P-type emitter layer.
By adopting the technical scheme, the interface defect of the substrate is reduced through the passivation layer, so that the recombination of carriers caused by the defect is reduced, and the photoelectric conversion efficiency is improved.
Optionally, in the solar cell described above, the passivation layer is an intrinsic amorphous silicon layer. The arrangement is beneficial to improving the passivation effect of the substrate.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for preparing a thin film of a solar cell according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of step S200 of a thin film preparation method of a solar cell according to an embodiment of the present invention;
fig. 4 is a schematic flow chart of another method for preparing a thin film of a solar cell according to an embodiment of the present invention;
fig. 5 is a schematic flow chart of a method for manufacturing a solar cell according to an embodiment of the present invention.
Reference numerals: 10-substrate, 100-N type monocrystalline silicon wafer, 101-first passivation layer, 102-second passivation layer, 20-N type hydrogenated silicon oxycarbide film, 30-first transparent conductive layer, 40-first metal electrode, 50-P type back emitter layer, 60-second transparent conductive layer, 70-second metal electrode.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. The meaning of "a number" is one or more than one unless specifically defined otherwise.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "front", "rear", "left", "right", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Currently, silicon heterojunction solar cells are mainly manufactured by introducing SiH into a process chamber 4 、H 2 、CO 2 、PH 3 To produce boron doped N-type nc-SiO x H film as window layer due to SiO x The matrix has a higher barrier height, which enables nc-SiO to be formed x The H film has higher resistivity, is unfavorable for collecting carriers in the solar cell, and has poor conductivity. nc-SiC x H film as window layer, and SiO x SiC compared with the matrix x Although the matrix has higher carrier mobility, siC x The length and polarity of Si-Si bond in the matrix are low, so that the nanocrystalline silicon is in SiC x Phase separation and accumulation in the matrix are difficult and crystallinity is poor.
In order to solve the above problems, the present invention provides a window layer of a solar cell, the window layer is an N-type hydrogenated silicon oxycarbide film having a chemical formula of nc-SiO x C y H is a nanocrystalline, hereinafter referred to as nc-SiO x C y H film, wherein, the range of non-stoichiometric ratio x is 0.1-0.5, the range of non-stoichiometric ratio y is 0.25-1, the non-stoichiometric ratio x and y represent the percentage of the flow of the gas containing doping element to the flow of the gas which is introduced into the process chamber.
By adopting the technical scheme, the window layer of the solar cell is nc-SiO formed by doping oxygen atoms and carbon atoms into the nanocrystalline silicon film simultaneously x C y H film, nc-SiO x C y H film fused with SiO x Matrix and SiC y Advantages of the matrix, where SiO x The matrix can realize optimal thermodynamic phase separation and has high amorphous phase stability at high temperature; siC (SiC) y The matrix has higher carrier mobility and high conductivity. Thus, nc-SiO x C y H film has better crystallinity and conductivity, and has wide optical band gap, and is used as window layer of solar cell, where solar cell passes light first, due to nc-SiO x C y The H film has better conductivity and wide optical band gap, and can better improve the photoelectric conversion efficiency.
When nc-SiO x C y When the H film is used as a window layer of a solar cell, the H film can be suitable for various solar cells, such as a silicon heterojunction cell, a tunneling oxidation passivation contact (Tunnel Oxide Passivated Contact, which can be abbreviated as TOPCON) cell, a laminated cell and the like. Due to nc-SiO x C y H film belongs to film prepared under low temperature process, and silicon heterojunction cell also belongs to solar cell under low temperature process, therefore nc-SiO x C y H film is a preferred choice for the window layer of a silicon heterojunction cell. Of course, in the manufacture of nc-SiO x C y When the H film is used as a window layer of other solar cells, temperature control in the preparation process needs to be considered, and when a solar cell with a high temperature process, such as a TOPCON cell, is used for preparing nc-SiO x C y Before H film window layer, high temperature process is first carried out, and nc-SiO is then manufactured x C y H film, avoid high temperature to nc-SiO x C y Breaking of H film.
As shown in fig. 1 and fig. 2, the embodiment of the invention further provides a method for preparing a window layer of a solar cell, which includes the following steps:
step S100, providing a substrate 10, and placing the substrate 10 on a carrier; typically, the base 10 is formed of a silicon substrate, and the light incident surface of the silicon substrate has a textured structure.
Step S200, depositing an N-type hydrogenated silicon oxycarbide film 20 on the first surface (light incident surface) of the substrate by hot filament chemical vapor deposition (Hot wire chemical vapor deposition, abbreviated as HWCVD) to form a window layer, which is the window layer described in the above embodiments, namely nc-SiO x C y H film.
Deposition of a pattern on a first surface of a substrate 10 by a HWCVD processIn the process of forming the N-type hydrogenated silicon oxycarbide film 20, the HWCVD process utilizes a hot wire high-temperature catalysis process to enable gas to form free radicals to be deposited on a substrate to form a film, compared with the existing process of coating a film on the substrate through plasma enhanced chemical vapor deposition (Plasma enhanced chemical vapor deposition, english abbreviated PECVD), the substrate is easy to damage under the bombardment effect of plasma to cause defects, so that the battery performance is reduced, and the HWCVD process is adopted to avoid damaging the substrate in the film coating process; the dissociation efficiency of HWCVD on the process gas is higher, the gas containing carbon atoms can be dissociated more easily, the crystallization rate of the prepared N-type hydrogenated silicon oxycarbide film 20 is higher, and a large amount of H is not needed 2 The cost is very low; the HWCVD method has simple process, higher film doping efficiency and no need of additional heat treatment process.
Further, in the present embodiment, the precursor gas for forming the N-type hydrogenated silicon oxycarbide film 20 includes a silicon source gas, a hydrogen source gas, an oxygen source gas, a carbon source gas, and a nitrogen source gas. So configured, the N-type hydrogenated silicon oxycarbide film 20 is prepared in one step by a precursor gas containing silicon atoms, hydrogen atoms, oxygen atoms, carbon atoms, and nitrogen atoms, thereby achieving high conductivity.
Specifically, the silicon source gas may be SiH 4 The hydrogen source gas may be SiH 4 、H 2 And/or CH 4 The oxygen source gas may be N 2 O and carbon source gas may be CH 4 The nitrogen source gas may be N 2 O and/or N 2 . So arranged that the precursor gas passes through N 2 O can provide oxygen atoms and nitrogen atoms simultaneously, and reduces the variety of gases, thereby reducing the storage cost of the gases.
Through N 2 Providing nitrogen atoms, doping N 2 Due to the fact that the process chamber contains trace N 2 N can be completely added at high temperature of the hot wire 2 Catalytic dissociation, N 2 Has the same doping effect as that of phosphane, so that the introduction of extra impurity gas is avoided, and N 2 Wide source, no toxicity, no harm and no pollution.
As shown in fig. 3, the formation of the N-type hydrogenated silicon oxycarbide film 20 on the first surface by HWCVD deposition specifically includes the steps of:
step S201, placing the substrate 10 in a process chamber, and vacuumizing the process chamber;
step S202, introducing a precursor gas into the process chamber, wherein the precursor gas comprises SiH 4 、H 2 、N 2 O、CH 4 And N 2 ；
Step S203, heating with hot filament to deposit precursor gas on the first surface HWCVD of the substrate 10 to form N-type hydrogenated silicon oxycarbide film 20, i.e. nc-SiO x C y H film, maintaining heating time for 200-500S.
Exemplary process conditions are as follows: siH (SiH) 4 The flow rate can be 10 sccm-50 sccm (standard cubic centimeter per minute, volume flow unit, standard milliliter per minute) H 2 The flow rate can be 300 sccm-1000 sccm, N 2 The O flow rate can be 5 sccm-30 sccm, CH 4 The flow rate can be 5 sccm-30 sccm, N 2 The flow can be 10 sccm-50 sccm, the process pressure can be 1 pa-10 pa, the process temperature can be 200-300 ℃, and the hot wire temperature can be 1600-1950 ℃.
Therefore, before HWCVD deposition, the process chamber is vacuumized, so that the process environment is not polluted, and the quality of deposited coating is improved.
Optimally, the pressure in the process chamber after vacuumizing is 4.0x10 -4 pa～6.0×10 -6 pa. The lower the pressure after vacuum pumping is, the more favorable the purification of the process environment and the collision of doping atoms are, and the film forming quality and the deposition efficiency are improved.
Illustratively, the process chamber may be evacuated to a pressure of 4.0X10 -4 pa、5.0×10 -6 pa、6.0×10 - 6 pa, etc., may be specifically selected according to the vacuum degree, and is not limited to the pressure values listed in this embodiment.
As shown in fig. 4, in this embodiment, before the substrate 10 is placed in the process chamber in step S100, the following steps are further included:
step S090, vacuumizing the process chamber;specifically, the pressure of the process chamber after evacuation is 4.0X10 -4 pa～6.0×10 -6 pa。
In step S091, a carrier plate for carrying the substrate 10 is placed into the process chamber.
Step S092, introducing SiH into the process chamber 4 And heating by using a hot wire, and performing hot wire chemical vapor deposition on a layer of amorphous silicon film on the inner walls of the carrier plate and the process chamber. Specifically, siH 4 The flow can be 100 sccm-500 sccm, the process pressure can be 2 pa-10 pa, the process temperature can be 200-300 ℃, and the hot wire can be 1400-1600 ℃;
step S093, preheating the carrier. Specifically, the carrier plate is transferred into the HWCVD preheating cavity for 3-10 min, and then transferred out of the HWCVD preheating cavity.
As can be seen from the above steps, before the substrate 10 is placed in the process chamber in step S100, a layer of amorphous silicon film is deposited on the surfaces of the carrier plate and the process chamber, so that the impurities on the surfaces of the carrier plate and the process chamber are covered by the amorphous silicon film, thereby protecting the subsequent substrate 10 from being polluted during deposition, and improving the forming quality of the N-type hydrogenated silicon oxycarbide film 20. After coating the carrier plate, the carrier plate is preheated, and then the substrate 10 is placed on the carrier plate, so that the surface of the substrate 10 covered by the carrier plate can be heated, and the subsequent uneven heating of the substrate 10 is avoided, and the deposition effect is prevented from being influenced.
In this embodiment, before forming the N-type hydrogenated silicon oxycarbide film 20, the method further comprises the steps of: an amorphous silicon thin film is formed on at least one surface of the substrate. The arrangement is beneficial to improving the passivation effect of the substrate.
Further, in this embodiment, before forming the N-type hydrogenated silicon oxycarbide film 20, the method further includes the steps of: and forming a seed layer on the first surface of the substrate by using a silicon source gas and a hydrogen source gas through a hot filament chemical vapor deposition method.
Specifically, in this embodiment, after the substrate 10 is placed in the process chamber in step S100 and the process chamber is evacuated, and before the precursor gas is introduced into the process chamber in step S200, the method further includes the steps of:
step S101, hot wire preheating is started, and specifically, preheating is performed for 30-60S.
Step S102, introducing SiH into the process chamber 4 And H 2 A seed layer is formed on the first surface of the substrate 10 by hot filament chemical vapor deposition. Specifically, siH 4 The flow rate can be 10 sccm-50 sccm, H 2 The flow is 300 sccm-1000 sccm, the process pressure is 1 pa-10 pa, the process temperature is 200-300 ℃, and the hot wire temperature is 1600-1950 ℃.
Since it is not easy to directly deposit the nano-crystalline N-type hydrogenated silicon oxycarbide film 20 on the light incident surface of the substrate 10, a seed layer is deposited on the substrate 10 before preparing the N-type hydrogenated silicon oxycarbide film 20, and the seed layer is microcrystalline and has many nucleation sites, which is beneficial to the deposition and growth of the subsequent nano-crystalline N-type hydrogenated silicon oxycarbide film 20.
As shown in fig. 5, the embodiment of the present invention further provides a method for manufacturing a solar cell, including the method for manufacturing a window layer as described in any of the above embodiments. That is, when the solar cell is used for preparing the window layer, the N-type nc-SiO described in any embodiment is adopted x C y H film is used as window layer.
The preparation method of the solar cell has the same beneficial effects as the preparation method of the window layer because the preparation method of the window layer in the application is adopted, and the detailed description is omitted.
As shown in fig. 1 and 5, further, in this embodiment, the substrate is an N-type substrate, specifically an N-type silicon substrate, and after heating with a hot filament in step S200 to enable the precursor gas to form the N-type hydrogenated silicon oxycarbide film 20 on the first surface of the substrate 10 by hot filament chemical vapor deposition, the method further includes the steps of:
in step S300, a P-type emitter layer 50 is formed on the second surface (backlight surface) side of the substrate 10.
In step S400, transparent conductive layers are formed on the surfaces of the N-type hydrogenated silicon oxycarbide film 20 and the P-type emitter layer 50.
In step S500, metal electrodes are formed on the surfaces of the transparent conductive layers on the first surface and the second surface, respectively.
Illustratively, a silicon heterojunction cell is illustrated:
step S200, depositing N-type nc-SiO on the light incident surface side of the N-type substrate 10 x C y H, a film;
step S300, depositing a P-type emitter layer 50 on the backlight surface side of the N-type substrate 10 by PECVD, wherein the P-type emitter layer 50 is a P-type doped layer;
step S400, in the N-type nc-SiO x C y H film is deposited with a first transparent conductive layer 30 and a second transparent conductive layer 60 on a P-type emitter layer 50, and the first transparent conductive layer 30 and the second transparent conductive layer 60 can be made of Indium Tin Oxide (ITO) or tungsten doped indium oxide (In) 2 O 3 W, abbreviated as IWO), indium Zinc Oxide (IZO), titanium doped indium oxide (ITiO), but is not limited thereto. The materials of the first transparent conductive layer 30 and the second transparent conductive layer 60 may be the same or different;
step S500, forming a first metal electrode 40 on the first transparent conductive layer 30 and forming a second metal electrode 70 on the second transparent conductive layer 60; the materials of the first and second metal electrodes 40 and 70 may be one or more of Ag, al, cu, W, but are not limited thereto. The materials of the first metal electrode 40 and the second metal electrode 70 may be the same or different.
By adopting the technical scheme, the N-type hydrogenated silicon oxycarbide film 20 is used as a window layer of the solar cell, has higher conductivity and wider optical band gap, and improves the performance of the solar cell.
As shown in fig. 1, the embodiment of the invention further provides a solar cell, which comprises an N-type substrate 10 and a window layer, wherein the window layer is an N-type hydrogenated silicon oxycarbide film 20, the N-type hydrogenated silicon oxycarbide film 20 is formed on the first surface of the substrate 10, and the N-type hydrogenated silicon oxycarbide film 20 is the above film, i.e. N-type nc-SiO x C y H film.
By adopting the above technical scheme, since the N-type hydrogenated silicon oxycarbide film 20 of the solar cell adopts the nanocrystalline hydrogenated silicon oxycarbide film as the window layer of the solar cell, the N-type hydrogenated silicon oxycarbide film has the same beneficial effects as those of the hydrogenated silicon oxycarbide film, and will not be described herein.
In some possible embodiments, the solar cell includes, in addition to the N-type substrate 10, the N-type hydrogenated silicon oxycarbide film 20 formed on the first surface of the substrate 10:
a P-type emitter layer 50 formed on the second surface of the substrate 10;
transparent conductive layers formed on the N-type hydrogenated silicon oxycarbide film 20 and the P-back emitter layer 50, respectively;
and a metal electrode formed on the transparent conductive layer.
Thus, the solar cell is a silicon heterojunction cell, in particular, in the N-type nc-SiO x C y A first transparent conductive layer 30 is deposited over the H film and a second transparent conductive layer 60 is deposited over the P-type emitter layer 50. The first metal electrode 40 is formed on the first transparent conductive layer 30, and the second metal electrode 70 is formed on the second transparent conductive layer 60.
Of course, the exemplary solar cell includes, in addition to the N-type substrate 10, the N-type hydrogenated silicon oxycarbide film 20 formed on the light incident surface side of the substrate:
a passivation contact layer formed on a backlight surface side of the substrate;
the passivation layer is formed on the surfaces of the N-type hydrogenated silicon oxycarbide film and the passivation contact layer;
and the metal electrode is formed on the passivation layer of the light incident surface and the backlight surface.
In this way, the solar cell is a TOPCon cell, specifically, the passivation contact layer is a tunneling oxide layer and a doped silicon layer sequentially formed on the back surface of the substrate; in N-type nc-SiO x C y And depositing a first passivation layer on the H film and depositing a second passivation layer on the doped silicon layer. A first metal electrode is formed on the first passivation layer, and a second metal electrode is formed on the second passivation layer.
Further, in the present embodiment, the thickness of the N-type hydrogenated silicon oxycarbide film 20 in the solar cell is 15nm to 30nm. Specifically, 15nm, 16nm, 17nm, 20nm, 22nm, 25nm, 28nm, 30nm, etc. are possible. The thickness cannot be too thin, otherwise the series resistance may be too high, so that the filling factor FF of the battery is reduced, the conductivity is reduced, the thickness cannot be too thick, otherwise the absorption of the N-type hydrogenated silicon oxycarbide film 20 is increased, and the light transmission is not facilitated.
As shown in fig. 1, in the present embodiment, a substrate 10 includes an N-type monocrystalline silicon wafer 100 and a passivation layer, wherein a surface of the N-type monocrystalline silicon wafer 100 has a textured structure; the light incident surface and the back surface of the N-type monocrystalline silicon wafer 100 are both provided with passivation layers, specifically, the light incident surface is a first passivation layer 101, and the back surface is a second passivation layer 102.
By adopting the technical scheme, the N-type monocrystalline silicon wafer 100 with the suede structure on the surface has a good light trapping effect, and can improve the light absorption effect. The generation of interface defects of the N-type monocrystalline silicon wafer 100 is reduced through the passivation layer, so that the recombination of carriers caused by the defects is reduced, and the photoelectric conversion efficiency is improved.
Further, in this embodiment, the passivation layer is an intrinsic amorphous silicon layer, which is beneficial to improving the passivation effect of the N-type monocrystalline silicon wafer 100, although other intrinsic silicon layers may be used.
Further, in the present embodiment, the P-type back emitter layer 50 is a P-type amorphous silicon layer or a P-type microcrystalline silicon layer. This arrangement facilitates the formation of the P-type back emitter layer 50 in a low temperature environment.
As shown in fig. 1 to 5, this embodiment exemplifies a process for manufacturing a solar cell:
the first step: texturing an N-type monocrystalline silicon wafer 100;
and a second step of: the double sides of the N-type monocrystalline silicon wafer 100 are deposited with an 8nm intrinsic amorphous silicon layer by a PECVD method to form an N-type substrate 10 as a passivation layer;
and a third step of: deposition of N-type nc-SiO using HWCVD on the light-incident surface of the substrate 10 x C y H film, as window layer of silicon heterojunction battery;
the third step comprises the following specific steps:
a. the process chamber is first arranged before depositionThe chamber is vacuumized, and the pressure is pumped to 5.0X10 -4 pa；
b. The carrier plate is conveyed into a process chamber, and SiH with the flow of 300sccm is introduced 4 And a hot wire is started, the temperature of the hot wire is 1500 ℃, the process temperature in the process chamber is kept to be 250 ℃, and a layer of amorphous silicon film is deposited on the carrier plate and the inner wall of the process chamber for protecting the subsequent process from being polluted;
c. transferring the carrier plate into a preheating chamber, maintaining for 8min, and transferring out;
d. placing the N-type monocrystalline silicon piece 100 with the double-sided passivation layer on a carrier plate and transferring the N-type monocrystalline silicon piece into a process chamber;
e. the process chamber is vacuumized to 5.0X10 -6 pa；
f. Starting a hot wire to preheat for 50s;
g. then, the SiH with the flow rate of 30sccm is introduced into the process chamber 4 And H with a flow rate of 800sccm 2 Starting a hot wire, wherein the temperature of the hot wire is 1900 ℃, the process temperature is 250 ℃, and the temperature is maintained for 30 seconds, and forming a seed layer on the substrate 10, wherein the thickness is about 2nm;
h. then, the SiH with the flow rate of 30sccm is introduced into the process chamber 4 H with flow rate of 800sccm 2 N with flow of 15sccm 2 O, CH with flow of 20sccm 4 N with flow rate of 35sccm 2 Starting a hot wire, wherein the temperature of the hot wire is 1900 ℃, the process temperature is 250 ℃, and depositing N-type nc-SiO on one surface of the N-type monocrystalline silicon wafer 100 with the double-sided passivation layer x C y H film, holding time 300s, N-type nc-SiO x C y H, the thickness of the film is about 20nm;
i. after completion, N-type nc-SiO is plated x C y The silicon wafer of the H film is transferred out of the process cavity.
Fourth step: plating P-type amorphous silicon or P-type microcrystalline silicon on the backlight surface by using a PECVD method to serve as a P-type back emitter layer 50 of the silicon heterojunction cell;
fifth step: plating TCO transparent conductive layers on two sides of the battery by using a Physical Vapor Deposition (PVD) method to serve as an antireflection film, and collecting current;
sixth step: and printing metal grid lines on the TCO transparent conductive layers on the upper surface and the lower surface to serve as metal electrodes of the cell, so as to finish manufacturing the solar cell.
In the description of the above embodiments, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (13)

1. A window layer of a solar cell is characterized in that the window layer is an N-type hydrogenated silicon oxycarbide film, and the chemical formula of the N-type hydrogenated silicon oxycarbide film is nc-SiO x C y H is a nanocrystalline state, wherein the range of the nonstoichiometric ratio x is 0.1-0.5, and the range of the nonstoichiometric ratio y is 0.25-1.
2. A method for fabricating a window layer of a solar cell, comprising:
providing a substrate;
depositing an N-type hydrogenated silicon oxycarbide film on the first surface of the substrate by using a Hot Wire Chemical Vapor Deposition (HWCVD) method, wherein the N-type hydrogenated silicon oxycarbide film forms the window layer as claimed in claim 1.
3. The method of manufacturing a window layer according to claim 2, wherein the precursor gas for forming the N-type hydrogenated silicon oxycarbide film comprises a silicon source gas, a hydrogen source gas, an oxygen source gas, a carbon source gas, and a nitrogen source gas.
4. The method of manufacturing a window layer according to claim 3, wherein the oxygen source gas includes N 2 O。
5. The method of claim 3, wherein the nitrogen source gas comprises N 2 。
6. The method of manufacturing a window layer according to claim 2, further comprising the step of, prior to forming the N-type hydrogenated silicon oxycarbide film: an amorphous silicon thin film is formed on at least one surface of the substrate.
7. The method of manufacturing a window layer according to claim 2, further comprising the step of, prior to forming the N-type hydrogenated silicon oxycarbide film: and forming a seed layer on the first surface of the substrate by using a silicon source gas and a hydrogen source gas through a hot filament chemical vapor deposition method.
8. A method of manufacturing a solar cell comprising the window layer manufacturing method of any one of claims 2-7.
9. The method of manufacturing a solar cell according to claim 8, wherein the substrate is N-type, and further comprising the steps of:
forming a P-type emitter layer on the second surface of the substrate;
forming transparent conductive layers on the surfaces of the N-type hydrogenated silicon oxycarbide film and the P-type emitter layer; and
and forming a metal electrode on the surface of the transparent conductive layer positioned on the first surface and the second surface.
10. A solar cell, comprising:
an N-type substrate; and
an N-type hydrogenated silicon oxycarbide film formed on the first surface of the substrate as a window layer, the window layer being as claimed in claim 1.
11. The solar cell of claim 10, further comprising:
a P-type emitter layer formed on the second surface of the substrate;
transparent conductive layers respectively formed on the N-type hydrogenated silicon oxycarbide film and the P-type emitter layer; and
and a metal electrode formed on the transparent conductive layer.
12. The solar cell of claim 11, wherein a passivation layer is provided between the first surface of the substrate and the N-type hydrogenated silicon oxycarbide film and/or a passivation layer is provided between the second surface of the substrate and the P-type emitter layer.
13. The solar cell of claim 12, wherein the passivation layer is an intrinsic amorphous silicon layer.
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