CN1163418C - Ultra-purity water producing apparatus by high temperature process and chemical liquid preparing system including the same - Google Patents

Ultra-purity water producing apparatus by high temperature process and chemical liquid preparing system including the same Download PDF

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Publication number
CN1163418C
CN1163418C CNB988112922A CN98811292A CN1163418C CN 1163418 C CN1163418 C CN 1163418C CN B988112922 A CNB988112922 A CN B988112922A CN 98811292 A CN98811292 A CN 98811292A CN 1163418 C CN1163418 C CN 1163418C
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water
ultra
high purity
high temperature
ion
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CN1279650A (en
Inventor
伴功二
则
木场和则
一
百濑祥一
宪
岩井俊宪
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Hitachi Zosen Corp
Mitsubishi Electric Corp
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Hitachi Zosen Corp
Mitsubishi Electric Corp
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    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
    • B01D3/06—Flash distillation
    • B01D3/065—Multiple-effect flash distillation (more than two traps)
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/02—Treatment of water, waste water, or sewage by heating
    • C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/02—Treatment of water, waste water, or sewage by heating
    • C02F1/04—Treatment of water, waste water, or sewage by heating by distillation or evaporation
    • C02F1/045—Treatment of water, waste water, or sewage by heating by distillation or evaporation for obtaining ultra-pure water
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/20—Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/44—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis
    • C02F1/441—Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis by reverse osmosis
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
    • C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
    • C02F1/46104—Devices therefor; Their operating or servicing
    • C02F1/4618—Devices therefor; Their operating or servicing for producing "ionised" acidic or basic water
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C02F2001/425—Treatment of water, waste water, or sewage by ion-exchange using cation exchangers
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C02F2001/427—Treatment of water, waste water, or sewage by ion-exchange using mixed beds
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/02—Non-contaminated water, e.g. for industrial water supply
    • C02F2103/04—Non-contaminated water, e.g. for industrial water supply for obtaining ultra-pure water
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/346—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from semiconductor processing, e.g. waste water from polishing of wafers

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatment Of Water By Ion Exchange (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)

Abstract

The present invention relates to a high-temperature ultra-purity water producing apparatus which comprises an evaporator for treating primary purified water obtained through a primary water purifying system so as to obtain high-temperature ultra-pure water, an ion exchanger 23 for removing a small quantity of metallic ions from the ultra-pure water obtained by the evaporator 22, a heat exchanger 24 for carrying out heat exchange to high-temperature ultra-pure water containing a small quantity of metallic ions not removed by the ion exchanger 23 and normal temperature ultra-pure water containing a small quantity of metallic ions removed by the ion exchanger 23 to prepare purified water, and a cooling heat exchanger 25 which is made of SUS materials and is used for cooling the ultra-pure water cooled by the purified water heat exchanger 24 and containing the metallic ions not removed to the temperature not more than 40 DEG C so as to be used for feeding water to the ion exchanger 23. The ultra-pure water which is carried out with metallic ion removal and is heated to high temperature by the heat exchanger 24 is converted to electrolytic ion water or is mixed with a chemical reagent through a chemical liquid preparing system for one processing step of a semiconductor making method.

Description

The high temperature ultra-high purity water is produced equipment
Technical field
The present invention relates to be used to comprise that the ultra-high purity water of the electronic applications of semicon industry produces equipment, exactly, the present invention relates to be used to produce the equipment of such high temperature ultra-high purity water, promptly it is an obvious and effective for obtain higher wafer cleaning and drying effect in semiconductor production process.
The preparation system of the soup that the invention still further relates to the treating processes that is used for semi-conductor or other accurate device (precision devices) and clean in particular for semiconductor wafer, exactly, the invention still further relates to the soup preparation system that is used to prepare with the supplying high temperature soup.
Term as herein described " soup " comprises the treatment solution that is used for cleaning the semiconductor wafer step and cleans the scavenging solution of other accurate device step and be used for stoping in processing semi-conductor step the natural oxide film of generation on silicon face.
Background technology
The electronic applications that comprises semicon industry needs the height pure water in recent years.Highly the water of pureization generally is process water, tap water, well water etc.Such untreated water contains suspended substance that content extremely surpasses water quality standard, ionogen, particulate, microorganism, organism, dissolved oxygen etc., thereby must remove these impurity.
Fig. 3,4 shows and becomes known for removing the equipment that these impurity ground produce ultra-high purity water.
Conventional example 1 shown in Figure 3 is that equipment 71 comprises the primary pure water system 72 that is used to handle untreated water and is used to handle the 1 st pure water that obtains by primary pure water system 72 so that obtain the second pure water system 73 of ultra-high purity water.Primary pure water system 72 comprises strainer 74, reverse osmosis unit 75, degasifying device 76 and ion-exchanger 77.Second pure water system 73 comprises apparatus for ultraviolet disinfection 78, removes mineral device 79 and ultra-fine filter 80 (UF).Equipment 71 is by reverse osmosis unit 75, ion-exchanger 77 and remove mineral device 79 deionizing composition from feedwater, contains seldom ion up to water, and the result has produced as its resistivity and has been not less than 18.0M Ω cm=18.0 * 10 6The ultra-high purity water of Ω cm.But, there is such problem in equipment 71, unless be its type impurity ion such as silicon-dioxide and organic ability are strong inadequately and it has also run into trouble fully remove dissolved oxygen from pure water aspect, and it needs independently sterilisation step, this is at room temperature to work because of equipment 71, therefore allow the bacterial reproduction growth inevitably, and described device structure is complicated and be not easy to monitor at work, because equipment comprises many combined treatment instruments.
On the other hand, legacy equipment example 2 shown in Figure 4 is suitable for removing non-ionic type impurity such as silicon-dioxide and organic gel and dissolved oxygen fully and has produced being applicable to the high temperature ultra-high purity water that improves its cleaning-drying effect.
Mainly primary pure water system is obtained 1 st pure water so that the multiple-effect evaporator I of acquisition high temperature ultra-high purity water and at the ultra-fine filter 2 in vaporizer downstream by being used to handle for legacy equipment example 2.The same in primary pure water system and the legacy equipment example 1.The 1 st pure water of supplying with vaporizer is admitted to also the utilizing the condensation latent heat of the portion water steam that produces in each effect district generating tube 7 of each effect district of vertically passing in the vaporizer I and the preheating tube 5 that is heated.Tank 13 during feedwater in the preheating tube 5 in the first effect district is heated to about 100 ℃ preset temperature by the latent heat that absorbs the hot steam condensation portion and enters bottom the first effect district.Feedwater in the tank 13 mixes with remaining enriched material in the generating tube 7 after removing water vapor, most of mixture is recycled pump 6 and takes out to the generating tube 7 that is arranged in top, the first effect district, so that one-tenth thin liquid film shape ground flows downward in pipe and produces water vapors by the condensation latent heat that absorbs most of hot steam outside managing at 100 ℃.The enriched material that obtains behind the generation water vapor flows into downwards in the groove 13 and with above-mentioned feedwater and mixes.Most of mixture is recycled pump 6 and is sent to water storage cavity 15.Residual mixture flows into the tank in the second effect district through connected entrance 14 ground, mixture here similarly mixes with the enriched material that flows down along generating tube.Most of mixture is sent to water storage cavity in top, the second effect district by a recycle pump.
The water vapor that produces in the generating tube in the first effect district is in mist eliminator 16 enters generating tube surrounding space in the second effect district.The contained fog of water vapor only stays rarely to be removed by mist eliminator 16.Most of water vapor condensation and phlegma on the generating tube outside surface flow in the condensate collector (not shown) in the second effect district, and remaining water vapor in the second effect district condensation on the preheating tube outside surface.In condensate collector, the phlegma of formation mixes with phlegma from generating tube, and mixture enters in the condensate collector in the 3rd effect district.
So, in each effect district, repeat said process.
In the end the water vapor that produces in the effect (n effect district) flows through mist eliminator and condensation on prolong 12 outside surfaces of condenser 1, and phlegma flows in the tank 11 under the condenser.In the tank 11 under all phlegmas inflow condensers that in each effect district, produce.All phlegmas that produce in each effect district flow in the condensate collector and similarly enter in the tank 11.Being collected in phlegma in the groove 11 is extracted out by ultra-pure water pump 10 and flows through the ultra-fine filter 2 that mainly is designed to remove particulate.
That pump 10 is extracted out and through ultra-filtration membrane 2 handle and the phlegma that do not have a particulate to be resistance be at least 18.0M Ω cm (records when the high temperature pure water is cooled to 25 ℃; Resistance as herein described all is meant the value that records under 25 ℃) the high temperature ultra-high purity water, the very approaching theoretical pure water resistance of such numerical value, and the TOC value of such pure water and dissolved oxygen concentration are very low.In order in semiconductor production process, to be used to clean semiconductor wafer, be preferably in and will make ultra-high purity water be used to effectively significantly improve under the situation of cleaning-drying effect, make the high temperature ultra-high purity water have about 70 ℃ to 80 ℃ temperature.
As shown in Figure 5, in semiconductor production process, many soups at high temperature are used to clean wafers.These soups replenish in batches, thereby when they were used to handle the wafer of some amount, soup was extracted out from clean container, subsequently with in the quantitative new soup input pod.
Soup is normally by preparation of such method and supply, and promptly ultra-high purity water and the chemical substance of being made by legacy equipment example 1 directly supplied with clean container respectively quantitatively and then be heated to preset temperature by electric heater.Perhaps, ultra-high purity water that legacy equipment example 1 is produced and chemical substance are periodically supplied with a chemical preparation container respectively and then are heated to preset temperature so that make soup in advance by electric heater, then as required, from container solution is supplied with clean container.An automatic supply device conveying soup that carries out high pressure supply or use pump with nitrogen.
In above-mentioned conventional high-temperature ultra-high purity water equipment example 2, metallic substance such as SUS316 or SUS304 are used to make similar devices parts such as generating tube, to guarantee the high temperature heat conductivility of heat exchange.In order to prevent that metal ion from dissolving in phlegma from metallic substance, the material part that be exposed in the phlegma is also then accepted processing and advantageously formed oxide film on material surface by electrolysis mixing polished finish in High Temperature Furnaces Heating Apparatus.Legacy equipment example 2 needs such processing, so it exists and needs complex apparatus building method and the high problem of construction cost.
By the way, handle, find that then it promptly approximately is the iron of 50ppt and the nickel of about 10ppt that the high temperature ultra-high purity water that is obtained contains metal ion if in the process of making conventional high-temperature ultra-high purity water equipment example 2, do not prevent stripping.In the semiconductor production method, be not less than 1 * 10 10The metal ion of atom/square centimeter is present in and is considered to unacceptable on the wafer surface.At the little metal ion in pure water concentration and the relation between the wafer surface amount of impurities investigate, wherein do not take to remove the measure of little metal ionic in this case.The results are shown in Table 1.(measuring method is introduced later on again).
Table 1
Contain the concentration of metal ions of the little metal ionic pure water that do not eliminate and the relation between the wafer surface amount of impurities
The water that experimental technique is used Temperature ℃ The iron level ppt of pure water Iron quantity on the wafer surface, * 10 10Atom/square centimeter
Soak 30 55 3.80 normal temperature pure water 31 49 1.57
Soak 68 67 9.64 high temperature pure water 68 67 7.30
Table 1 has disclosed the iron ion that the pure water that contains the metal ion of not removing on a small quantity contains 49ppt-67ppt, and this allows 1.57 * 10 10Atom/square centimeter is to 8.64 * 10 10Atom/square centimeter iron ion is attached on the wafer surface and contaminated surface, and table 1 has also disclosed amount of impurities and increased under comparatively high temps.
The high temperature ultra-high purity water that dissolved oxygen concentration is low not only washes soup, and is used for equipment cleaning effectively as preventing that metallic impurity are also removed from natural oxide film as everyone knows in the surface so the natural oxide film of generation, the etching on silicon face.But when building up traditional high temperature ultra-high purity water production equipment example 2 under the situation of not carrying out the anti-stripping processing of metal ion, the water that is generated contains the little metal ion, and they will cause the problem of polluting wafer surface.Therefore, such equipment can not be used in the actual processing of bladed tool without a doubt.
The method of in batches changing soup has run into following problem aspect clean wafers in semiconductor fabrication.
*Must change soup for some time, comprise the time of extracting lean solution out, the time and the temperature regulation time of the new soup of supply during this period of time, and need for some time, thereby there is not wafer to be arranged in container so that in the liquid make-up process, wafer is shifted out outside the clean container.Therefore, cleaning operation was interrupted in the whole time period, so that certainly led to lower productivity.
*Can be after soup be changed clean wafers at once, but before changing the weak effect that cleans than horse back after changing of the effect of clean wafers at once.This causes finished product difference and product performance fluctuation.
Summary of the invention
An object of the present invention is to provide a kind of equipment that is used to produce the high temperature ultra-high purity water, this pure water and the water ratio that is obtained by legacy equipment example 1, its silicon-dioxide, the content of organism and dissolved oxygen is much lower, and it does not need sterilization to control bacterium, this device structure is simple, be easy to monitor at work and be easy to maintenance, and comprise not needing to resemble in legacy equipment example 2 that the processing that electrolysis mixing polishing and High Temperature Furnaces Heating Apparatus are handled prevents the metal ion stripping, guaranteed that thus equipment has simple production process and can produce this equipment more economically.
Another object of the present invention provides a kind of system and method for preparing soup, and described soup can be used for the clean wafers step of semiconductor production process under change state not, has eliminated the quality product fluctuation that causes because of the soup change of state thus.Another object of the present invention provides a kind of method and system that is used to prepare soup, and the high temperature ultra-high purity water that described soup can be low with its dissolved oxygen content is as treatment solution.
The invention provides a kind of high temperature ultra-high purity water and produce equipment, the 1 st pure water that comprises a pretreated water that is used for handling obtaining by direct filtration and degasification or obtain by primary pure water system is so that obtain the vaporizer of high temperature ultra-high purity water, the electronic deionization interchanger of solid stream of water type that is used for removing metal ion from ultra-high purity water that vaporizer obtains, the electronic deionization interchanger of this solid stream of water type is piled up Zeo-karb and anionite-exchange resin in the central water route that is formed by cationic exchange membrane and anion-exchange membrane, the outside that is formed on cationic exchange membrane in addition has anion-exchange membrane, the water route, the outside that has cationic exchange membrane in the outside of anion-exchange membrane, with central water route as the processed water water route, with water route, the outside as the condensed water water route, the outside in the water route in the outside, cationic exchange membrane with the outside adds electric field as positive polar region, thereby can carry out the successive ion exchange treatment.
Another kind of high temperature ultra-high purity water of the present invention is produced equipment, the 1 st pure water that comprises a pretreated water that is used for handling obtaining by direct filtration and degasification or obtain by primary pure water system is so that obtain the vaporizer of high temperature ultra-high purity water, the electronic deionization interchanger of solid stream of water type that is used for removing metal ion from ultra-high purity water that vaporizer obtains, the electronic deionization interchanger of this solid stream of water type is piled up Zeo-karb and anionite-exchange resin in the central water route that is formed by cationic exchange membrane and anion-exchange membrane, the outside that is formed on cationic exchange membrane in addition has anion-exchange membrane, have the water route, the outside of cationic exchange membrane in the outside of anion-exchange membrane, also pile up ion exchange resin in water route, the outside.The successive ion exchange treatment as the condensed water water route, as the processed water water route, in the outside in the water route in the outside, add electric field with the cationic exchange membrane in the outside as negative pole ground, thereby can be carried out with water route, the outside in central water route.
The primary pure water system of production unit of the present invention can with conventional case 1 in identical and comprise strainer, reverse osmosis unit, degasifying device and ion-exchanger.According to the feed-water quality of present device, can be with the pretreatment system substituting disposable pure water system that comprises direct filtration device and degasifying device.
Vaporizer can with conventional case 2 in identical, and mainly by being used to handle the 1 st pure water pretreated water that obtains by pretreatment system or that obtain by primary pure water system so that the multiple-effect evaporator I of preparation high temperature ultra-high purity water constitutes, as required, vaporizer has been equipped with a ultra-fine filter (UF) 2 in its downstream.Vaporizer is in about 100 ℃ of work down.But the metallic substance of making vaporizer does not need to accept to prevent the processing of metal ion stripping.
Mixed-bed ion exchange resin or strong-acid cation-exchange resin have preferably been piled up in the ion-exchanger.These mixed-bed ion exchange resins and strong-acid cation-exchange resin preferably have thermotolerance.When its during according to predetermined exchange volume ratio mixed-stacking, mixed-bed ion exchange resin is the mixture of strong-acid cation-exchange resin and strong base anion (basic anion) exchange resin.Vaporizer obtains the high temperature ultra-high purity water and keeps high temperature or be cooled to be no more than under 40 ℃ the situation being supplied to exchange resin at soft water heat exchanger and cooling heat exchanger.When its during according to 1: 1 exchange volume ratio mixed-stacking, mixed-bed ion exchange resin for example is the compound of strong-acid cation-exchange resin and strong anion-exchange resin, for example is the ion exchange resin SMT100 that Mitsubishi Chemical Ind produces.In addition, strong-acid cation-exchange resin for example is the ion exchange resin SKT10 that Mitsubishi Chemical Ind produces.
Replace ion exchange resin ground, in ion-exchanger, piling up an ion-exchange membrane or ion-exchange fiber.These ion-exchange membranees and ion-exchange fiber preferably have resistance toheat.
In addition, ion-exchanger is an electronic deionization interchanger of solid stream of water type.The electronic deionizer of solid stream of water type need not carry out separately so that regenerate ion exchange resin outside work, and therefore it can work fully continuously.Fig. 6-Fig. 8 shows the electronic deionizer of solid stream of water type.Deionizer 50 shown in Figure 6 comprises a runner 52 that is used for wanting treating water, it is made of cationic exchange membrane 53 and anion-exchange membrane 54 and piles is covering Zeo-karb 55 and anionite-exchange resin 56, it is outer and formed an enriched material runner 59 that anion-exchange membrane 57 is arranged on Zeo-karb 53, and that cationic exchange membrane 58 is arranged on anion-exchange membrane 54 is outer and formed an enriched material runner 59.Successive ion-exchange can realize by apply electric field to deionizer outside enriched material runner 59.Such deionizer for example is the products C DI of Ku Lita (Kurita) water industry company.Deionizer 51 shown in Figure 7 is corresponding with the deionizer 50 of Fig. 6, wherein all piles in all runners 52,59 and has covered ion exchange resin 55,56, and center flow channels is as enriched material runner 59, and outer flow passage is with acting on the runner 52 of wanting treating water.Such deionizer for example is the novel product CDI of Ku Lita water industry company.Deionizer 61 shown in Figure 8 has a runner 62 that is used for wanting treating water, and this runner is constituted and piled by a cationic exchange membrane 63 and an anion-exchange membrane 64 and covering cation exchange fibre 65 and anion-exchange fibre 66.Such deionizer for example is day product New D0des of Benshen's water (Rensui) company.The ion exchange element of the electronic deionizer of solid stream of water type preferably all has stable on heating ion exchange resin and ion-exchange fiber.
In high temperature ultra-high purity water production equipment of the present invention, feedwater (process water or tap water) is passed through the processing of pretreatment system or primary pure water system earlier and removed suspended substance, ionogen, particulate, microorganism etc. from feedwater.But the processing of pretreatment system or primary pure water system also can't be removed non-ionic type impurity fully, as silicon-dioxide and organic substance and dissolved oxygen.In order to remove them, pretreated water or 1 st pure water are supplied to vaporizer so that handle.The pure water production process of vaporizer involves phase transformation and seepage step, thereby gas dissolved such as non-ionic type impurity such as silicon-dioxide, organic substance and dissolved oxygen can separated be gone out and greatly reduced foreign matter content in the water.Because vaporizer is worked under about 100 ℃ high temperature, so do not have viable cell in the vaporizer and do not need sterilization to control bacterium.Do not have as in the high temperature stove, force form oxide film or by electrolysis mixings polished finish the liquid contacting part branch of vaporizer is prevented the processing of metal ion stripping, thereby the high temperature ultra-high purity water that vaporizer obtained will contain the little metal ion, and mixed bed ion exchange resin of these metal ions or strong-acid cation-exchange resin are removed.For example, so the high temperature ultra-high purity water of preparation is used to clean wafers.
And have the band apparatus for ultraviolet disinfection, remove the mineral device and compare at the legacy equipment example 1 of interior second pure water system with ultra-fine filter, high temperature ultra-high purity water of the present invention is produced the simpler and easier maintenance of device structure and is monitored its working condition.Compare with legacy equipment example 2, device manufacturing method of the present invention is simple and cheap for manufacturing cost, and this is because the oxide film that vaporizer needn't mix polishing and be forced to carry out by electrolysis in High Temperature Furnaces Heating Apparatus is handled the processing of accepting to prevent the metal ion stripping.
Say that in quality pure water that vaporizer obtains is the same or better with the ultra-high purity water that the wafer that will be used in the semiconductor making method cleans, except water contains the little metal ion (iron and nickel), as the iron of 50ppt and the nickel of 10ppt.This has greatly prolonged the work-ing life of mixed-bed ion exchange resin or strong-acid cation-exchange resin treating water, can produce the high temperature ultra-high purity water of the wafer cleaning that can be used to without a doubt in the semiconductor making method thus, and not cause that cost increases.
High temperature ultra-high purity water of the present invention is produced equipment and is preferably also comprised a soft water heat exchanger that is used to make by vaporizer that obtain and high temperature ultra-high purity water that contain the metal ion of not removing to accept heat exchange, wherein said ultra-high purity water has usual temperature and its metal ion is removed by the ion-exchanger processing, has cooled off thus to contain the high temperature ultra-high purity water of not removing metal ion and heat the normal temperature ultra-high purity water that does not have metal ion before being sent to ion-exchanger.Therefore, be deposited in mixed-bed ion exchange resin in the ion-exchanger and strong-acid cation-exchange resin does not need very heat-resistingly, and has caused the thermosteresis that reduces by the recovery of heat that soft water heat exchanger causes.
In addition, high temperature ultra-high purity water production equipment comprises also that preferably one is used for being cooled to not be higher than 40 ℃ so that be used as the cooling heat exchanger of the feedwater of ion-exchanger with containing the metal ion of not removing and being subjected to soft water heat exchanger refrigerative ultra-high purity water.This has guaranteed that the ultra-high purity water that will be injected into ion-exchanger can be cooled to the temperature that does not exceed specified temp.
So locate above-mentioned heat exchanger, promptly vaporizer, soft water heat exchanger, cooling heat exchanger and ion-exchanger are disposed in order by this from top to bottom.Heat exchanger can be the interchanger that is made of fluorocarbon resin such as PFA or PVDF, and it is not easy to stripping and is used to make traditional ultra-high purity water heat exchanger.
Using metal to make under the situation of soft water heat exchanger, the use interchanger has proposed strict demand to the metal stripping under the high temperature in pure water, and interchanger is used for heating does not simultaneously have little metal ionic normal temperature ultra-high purity water.Therefore, the metallic substance that uses is titanium preferably, in numerous metals, it least is easy to released ion, the anti-oxidant stainless steel that such metal also can be made by electropolishing and special thermal treatment subsequently or mix the anti-oxidant stainless steel that polishing and special thermal treatment are subsequently made by electrolysis.The anti-oxidant stainless steel of making by electropolishing and special thermal treatment subsequently for example is the Gold EP WHITE of Shinko Pantekku company.
At soft water heat exchanger is to mix by titanium, the anti-oxidant stainless steel of making by electropolishing and special thermal treatment subsequently or by electrolysis under the situation that anti-oxidant stainless steel that polishing and special thermal treatment subsequently make constitutes, and be under the situation about making by stainless steel at cooling heat exchanger, the little metal ion is removed by ion-exchanger under the situation of its stripping stainless steel interchanger, and subsequently, do not have or little metal ionic ultra-high purity water is sloughed in the soft water heat exchanger heating that almost do not form the metal stripping.As a result, the quality of the high temperature ultra-high purity water that obtains does not at last reduce.In addition, metal heat exchanger has stronger thermal conductivity and than those fluorocarbon resin heat exchangers such as the PFA or the easier machining manufacturing of PVDF heat exchanger of usefulness in the past, has therefore brought compact construction and the lower advantage of manufacturing cost.
When metallic substance is used as cooling heat exchanger, use this heat exchanger in the moderate temperature scope, then not too strict to the requirement of metal stripping, and described interchanger is used for cooling off ultra-high purity water before flowing through ion-exchanger, thereby it preferably is made of material stripping identical or littler metal of quantity in the pure water.The anti-oxidant stainless steel that the metal that is used for cooling heat exchanger for example is stainless steel, titanium, make by electropolishing and special thermal treatment subsequently or mix the anti-oxidant stainless steel that polishing and special thermal treatment are subsequently made by electrolysis.
The high temperature ultra-high purity water that aforesaid device obtained is used to the cleaning operation of the treatment step in the semiconductor making method shown in Figure 5 certainly, and is adopting under the situation of soup preparation system of the present invention, water can be made into electrolytic ionic water or with chemical reagent such as NH 4OH, H 2O 2, HCl, HF, H 2SO 4Or HNO 3Mix so that obtain to be used for to clean the chemical solution of the treatment step of outer semiconductor making method.(term " soup " should be understood that it not only comprises chemical substance, and comprises material gas or oxic gas)
The present invention also provides a kind of soup preparation system, and it comprises that electrolytic ionic water production equipment that high temperature ultra-high purity water of the present invention produces equipment, one and be used for being resolved into by the high temperature ultra-high purity water that this production unit obtains electrolytic anode power and water Xie Yinjishui, one directly are supplied to anode water and negative electrode water the feeding mechanism of the soup storage container of the equipment that is used to handle semi-conductor or other precise electronic device.When high temperature ultra-high purity water process electrolytic ionic water production equipment, produced high-temperature electrolysis ionized water (electrolytic anode power and water Xie Yinjishui).Electrolytic anode power and water Xie Yinjishui is supplied to different soup storage containers.The electrolytic ionic water production equipment for example is a kind of device with three chamber electrolyzers (Organo company product) structure.Ion-exchange membrane or ion-exchange fiber that three chamber electrolyzers are used preferably have thermotolerance.The soup preparation system provides its cleaning performance than the better high-temperature electrolysis ionized water of those low-temperature ion water, has therefore shortened required scavenging period and has allowed use soup still less.
The present invention provides a kind of soup preparation system again, it comprises that aforesaid high temperature ultra-high purity water produces equipment, one and be used for directly the high temperature ultra-high purity water that is obtained by this production unit and a kind of soup supply regulating mechanism that will be supplied to the soup storage container of an equipment that is used to handle semi-conductor or other accurate device with high temperature ultra-high purity water blended chemical reagent, and this supply regulating mechanism also can be operated and be used for the soup in the container is adjusted to ideal temperature or concentration (seeing Figure 12).In order to make the soup in the soup storage container have ideal concentration, system for example comprises the at the uniform velocity water supply installation and a chemical substance automatic supply device of supplying high temperature ultra-high purity water.Water supply installation has been equipped with a display control unit, has shown under meter and an automatically controlled valve of work output.The chemical substance automatic supply device has the under meter of a chemical substance storage tanks, display control unit, demonstration work output and automatically controlled valve etc.For example, also be provided with a heat exchanger so that make the soup in the soup storage container have ideal temperature.
The present invention also provides a kind of soup preparation system, and it comprises that high temperature ultra-high purity water produces the mixing device that equipment, are used to mix a kind of chemical reagent and the high temperature ultra-high purity water that is obtained by this production unit.For example, a mixing tank is used as mixing device.In order to make the soup in the mixing device have ideal concentration, system for example comprises water supply installation, a chemical substance automatic supply device (seeing Figure 10,11) of an above-mentioned at the uniform velocity supplying high temperature ultra-high purity water.In order to make soup have ideal temperature when it is in the soup storage container, for example (see figure 10) is provided with a heat exchanger between container and mixing device.Mixing device can be arranged near the high temperature ultra-high purity water production equipment, perhaps is arranged near the soup storage container.An air feeder (not shown) is set so that HCL, NH with can replacing the chemical substance automatic supply device 3, HF, NH 4F, SO X, NO XOr similar gas material or O 3, O 2, oxygen atomic group or similar oxidizing gas mix with the high temperature ultra-high purity water that is obtained by this production unit.
Soup that preparation system obtains is supplied to the chemical vessel storage container by such method, the soup that promptly has ideal concentration and a temperature is by supply container in batches, and perhaps container is without interruption to have the soup of ideal concentration and temperature and extract liquid ground from container out according to the speed that equals supply rate and supply by giving according to predetermined speed.
Comprise at method therefor and to give according to predetermined speed that container is without interruption to have the soup of ideal concentration and temperature and extract out from container according to the speed that equals supply rate under the situation of step of liquid, the performance of the liquid in the container does not change.Therefore this has eliminated the soup performance inconsistency, has obtained higher output yield and allows non-stop run and eliminated cleaning break period, and the working hour increases and obtained more high productivity as a result.
Even when the soup that be adjusted to ideal temperature and concentration by supply container in batches, liquid heat still can be less than time when supplying the room temperature ultra-high purity water according to the past traditional method to the temperature required time, this is to have high temperature because of the pure water that will supply.
Description of drawings
Fig. 1 is the schema that expression high temperature ultra-high purity water of the present invention is produced first embodiment of equipment.
Fig. 2 is the schema that expression high temperature ultra-high purity water of the present invention is produced second embodiment of equipment.
Fig. 3 is the schema that the traditional ultra-high purity water of expression is produced the equipment example.
Fig. 4 is the schema that the traditional high temperature ultra-high purity water of expression is produced the equipment example.
Fig. 5 is the view of the treatment step example of expression semiconductor processing process.
Fig. 6 is the view of expression solid stream of water type electronics deionizer example.
Fig. 7 is the view of another solid stream of water type electronics deionizer example of expression.
Fig. 8 is the view of another solid stream of water type electronics deionizer example of expression.
Fig. 9 is the schema of first embodiment of expression soup preparation system of the present invention.
Figure 10 is the schema of second embodiment of expression soup preparation system of the present invention.
Figure 11 is the schema of the 3rd embodiment of expression soup preparation system of the present invention.
Figure 12 is the schema of the 4th embodiment of expression soup preparation system of the present invention.
Embodiment
Below will the embodiment that high temperature ultra-high purity water of the present invention is produced equipment be described referring to Fig. 1,2.But the present invention is not limited to these embodiment.
Fig. 1 shows first embodiment that high temperature ultra-high purity water of the present invention is produced equipment.As shown in the figure, equipment comprise be used for as feedwater be located in science and engineering industry water or tap water in case obtain the primary pure water system 21, one of 1 st pure water be used to handle primary pure water system 21 obtain 1 st pure water in case obtain the multiple-effect evaporator 22, one of high temperature ultra-high purity water be used for from vaporizer 22 pure water that obtains remove metal ion ion-exchanger 23, be arranged in soft water heat exchanger 24 and cooling heat exchanger 25 between vaporizer 22 and the ion-exchanger 23.
Primary pure water system 21 comprises that being used for handling feedwater is process water, running water filter, reverse osmosis unit, degasifying device and the ion-exchanger (see figure 3) of importing under the room temperature (promptly 25 ℃) so that obtain the normal temperature 1 st pure water and obtaining pure water is supplied with vaporizer 22.In primary pure water system 21, mainly remove suspended substance by strainer, remove ionogen (ionic species) by reverse osmosis unit and ion-exchanger, remove dissolved oxygen by degasifying device, thereby obtained the pure water of the dissolved oxygen of the silicon-dioxide of TOC, 3ppb that resistivity is 17.5M Ω cm and the little metal ion that contains 0.1ppb (100ppt), 30ppb and 50ppb.
Ion-exchanger 23 is being piled up strong-acid cation-exchange resin (ion exchange resin SKT10, Mitsubishi Chemical Ind's product).
Vaporizer 22 has the structure identical with conventional example 2 and figure 4 illustrates such structure, and it is mainly obtained 1 st pure water and constitute so that make the multiple-effect evaporator of high temperature ultra-high purity water by being used to handle primary pure water system.But the metallic substance of making vaporizer does not have through preventing the processing of metal ion stripping.1 st pure water is supplied to vaporizer 22, has obtained temperature by the mode identical here and be about 75 ℃ high temperature ultra-high purity water with conventional example 2.As shown in table 2, the water that is obtained is high-purity clear height temperature ultra-high purity water of the metal ion (iron and nickel ion) that only contains the metallic substance of making vaporizer on a small quantity.
Table 2
From not through preventing that high temperature ultra-high purity water that the metal stripping is handled from producing the analytical results of quality of the ultra-high purity water of equipment
Analysis item Unit Undressed equipment outlet Analytical procedure or instrument
Resistance MΩ·cm ＞18.10 AC two electrodes method, high quick ohmer, model AQ-11
TOC ppb ＜3.0 Electrometric method is led in the UV radiation, ANATEL TOC meter
Viable count 0 The MF method, 30 ℃ * 7 days
Dissolved oxygen ppb ＜1.0 Polarography, model 2713
Na ppt ＜1 ICP-MS SPQ-8000 (high quick spectrum)
Ca ppt ＜5 ICP-MS SPQ-8000 (high quick spectrum)
Fe ppt 59 ICP-MS SPQ-8000 (high quick spectrum)
Ni ppt 14 ICP-MS SPQ-8000 (high quick spectrum)
Cl ppb ＜0.01 The chromatography of ions concentration method, A-20101
SO 4 ppb ＜0.011 The chromatography of ions concentration method, A-20101
SiO 2 ppb ＜0.01 NITRATE BY FLAME ATOMIC absorbs divides luminosity method of masurement, 5100
Annotate: μ g/l:ppb, ng/l:ppt
The vaporizer 22 high temperature ultra-high purity water that obtains is admitted in the high temperature fluid inlet of soft water heat exchanger 24 and is cooled to about 40 ℃ in heat exchanger, then be admitted to the high temperature fluid inlet of cooling heat exchanger 25 and be cooled to about 35 ℃ again, make them flow through ion-exchanger 23 subsequently at this.The little metal ion (iron and nickel ion) that is obtained in the high temperature ultra-high purity water at vaporizer 22 has 35 ℃ normal temperature and has the resistance that is at least 18.0M Ω cm, and its metal ion content is near 5ppt.The normal temperature ultra-high purity water is admitted in the cryogen inlet of soft water heat exchanger 24, and water reclaims heat and is at least 18.0M Ω cm, metal ion content as resistance from being about of being obtained by vaporizer 22 at this and flows out low temperature near 70 ℃ of high temperature ultra-high purity water ground of 5ppt and export 75 ℃ the ultra-high purity water.Water is sent to the place to use as clean wafers with high temperature ultra-high purity water ground.
Tathagata is supplied to the low temperature side of cooling heat exchanger 25 from the water coolant of cooling tower.Water coolant can be the cold water from condenser.Contain and do not remove the cooling that ultra-high purity water metal ion and be cooled to 30 ℃ of-45 ℃ of medium temperatures in soft water heat exchanger 24 continues to be subjected to cooling heat exchanger 25 on a small quantity.When the ion exchange resin in being deposited in ion-exchanger 23 is thermo-labile, contains the water of not removing metal ion and be preferably in and flow through before the ion-exchanger 23 near 40 ℃.The cooling heat exchanger 25 that is provided with has guaranteed this temperature.Do not remove metal ion and temperature that flow through the water of soft water heat exchanger 24 when being no more than the ion exchange resin heat resisting temperature containing, cooling heat exchanger 25 needn't be set.
In aforesaid device, soft water heat exchanger 24 is made of titanium, and cooling heat exchanger 25 is made by SUS316.
The ultra-high purity water that flows through cooling heat exchanger 25 has been accepted the cooling of soft water heat exchanger 24 and has been in to be difficult for making in the intermediate temperature range of metallic substance stripping, even thereby interchanger 25 is to be made by SUS316, the also possible hardly stripping of little metal ion is in water.In addition, even stripping is in ultra-high purity water from interchanger 25 for the little metal ion, water flows through ion-exchanger 23 subsequently, does not therefore have any trouble that is caused by the stripping metal ion.Therefore, seem that to making cooling heat exchanger 25 more useful metallic substance for example be that those stripping quantity are equal to or slightly less than stainless material, as SUS316, SUS316L, SUS304, SUS304L, perhaps other stainless steel that dissolving out capability is suitable, titanium, the anti-oxidant stainless steel that obtains by electropolishing and follow-up special thermal treatment, mix anti-oxidant stainless steel that polishing and special thermal treatment subsequently obtain etc. by electrolysis.
On the other hand, soft water heat exchanger 24 is used to strictly prevent under the high temperature of metallic substance stripping.In addition, that flow through this interchanger 24 and removed little metal ionic ultra-high purity water thus and used resembling in cleaning.Therefore interchanger 24 is the titanium heat exchanger, and metal ion hardly may stripping from such material, thereby has prevented that the final quality that obtains the high temperature ultra-high purity water from can not reduce.Except titanium, it seems that the available metallic substance for example is the anti-oxidant stainless steel that obtains by electropolishing and special thermal treatment subsequently, mixes anti-oxidant stainless steel that polishing and special thermal treatment subsequently obtain etc. by electrolysis.
Analyze to the water quality in high temperature ultra-high purity water production equipment exit of the present invention (35 ℃) with in the water quality in the titanium system soft water heat exchanger exit of this equipment (70 ℃).Table 3 has been listed analytical results.
Table 3
Process is removed the analytical results of the ultra-high purity water quality of little metal ion processing
Analysis item Unit Resin cation (R.C.) outlet (35 ℃) Titanium exchanger outlet (70 ℃) Analytical procedure or instrument
Resistance MΩ·cm ＞18.10 ＞18.10 AC two electrodes method, high quick ohmer, model AQ-11
TOC ppb ＜3.0 ＜3.0 Electrometric method is led in the UV radiation, ANATEL TOC meter
Viable count 0 0 The MF method, 30 ℃ * 7 days
Dissolved oxygen ppb ＜1.0 ＜1.0 Polarography, model 2713
Na ppt ＜1 ＜1 ICP-MS SPQ-8000 (high quick spectrum)
Ca ppt ＜5 ＜5 ICP-MS SPQ-8000 (high quick spectrum)
Fe ppt ＜1 2 ICP-MS SPQ-8000 (high quick spectrum)
Ni ppt ＜1 ＜1 ICP-MS SPQ-8000 (high quick spectrum)
Cl ppb ＜0.01 ＜0.01 The chromatography of ions concentration method, A-20101
SO 4 ppb ＜0.01 ＜0.01 The chromatography of ions concentration method, A-20101
SiO 2 ppb ＜0.01 ＜0.01 NITRATE BY FLAME ATOMIC absorbs divides luminosity method of masurement, 5100
The ultra-high purity water that present device obtained be used to immersion test, and simulation make the step ground that washes that is carried out in the semiconductor processes and carried out polluting check.To analyzing through the wafer surface of experiment.Table 4 has been listed analytical results.
Table 4
Through the concentration of metal ions of pure water that removing the little metal ion processing and the relation between the wafer surface amount of impurities
The pure water experiment Temperature ℃ The iron level ppt of pure water Iron quantity on the wafer surface, * 10 10Atom/square centimeter
Pure water soaks normal temperature and cleans 30 ＜1 0.34
RCA normal temperature cleans 33 ＜1 0.30
RCA+HF normal temperature cleans 0.42
RCA high temperature cleans 68 2 0.39
RCA+HF high temperature cleans 0.40
Table 4 has disclosed iron ion quantity and has been lower than high temperature semiconductors manufacturing process unacceptable 1 * 10 10Atom/square centimeter, and under such hot conditions, need could not have problems thus than more strictly avoiding impurity metal ion at normal temperatures.Therefore, find that the high temperature ultra-high purity water that present device is produced is applicable to clean wafers in semiconductor fabrication.The above results has also shown, the SUS heat exchanger must not made troubles as soft water heat exchanger 24 as cooling heat exchanger 25 and with the titanium heat exchanger.
Referring to table 4 and table 1, the pure water concentration of iron utilizes SPQ-8000 (high quick spectrum) and measures by the inductively coupled plasma spectrometry, SPQ-8000 is produced by Seiko Denshi Kogyo company, the iron analysis of wafer surface utilizes TREX610T and is undertaken by the total reflective analysis of X-fluorescent x ray, and TREX610T is produced by Tekunosu company.
The pure water immersion test be with the wafer be test specimen, and by under specified temp (normal temperature or high temperature) wafer is immersed in the overflow pure water pond, and dries with the rotary drying stove subsequently under the situation of wafer and carry out.It is to be test specimen and by wafer is immersed in H with the wafer that normal temperature cleans that RCA down tests 2SO 4/ H 2O 2In the solution, and then be immersed in normal temperature overflow pure water pond and NH subsequently 4OH/H 2O 2/ H 2In the O solution, and be immersed in subsequently in normal temperature overflow pure water the pond in and also then be immersed in HCL/H 2O 2/ H 2In the O solution, in the normal temperature overflow pure water pond subsequently, and dry with the rotary drying stove subsequently and carry out under the situation of wafer.RCA experiment under the high temperature cleaning repeats the step identical with the normal temperature cleaning experiment, except replacing the normal temperature pure water pond with high temperature pure water pond.The RCA+HF experiment that normal temperature cleans is to be undertaken by cleaning the mode that the identical mode of RCA experiment handles test specimen with normal temperature, and with wafer be immersed in dilute hydrochloric acid solution and the normal temperature overflow pure water pond subsequently, and subsequently in the rotary drying stove drying crystal wafer so that measurement.The RCA+HF experiment that high temperature cleans is to handle the wafer test specimen according to the identical mode of the RCA experiment of cleaning with high temperature to carry out, and wafer is immersed in the dilute hydrochloric acid solution neutralization high temperature overflow pure water pond subsequently, and subsequently in the rotary drying stove drying crystal wafer so that measure.
Fig. 2 shows second embodiment that high temperature ultra-high purity water of the present invention is produced equipment.The difference of this equipment and first embodiment is, has saved two heat exchangers 24,25.Therefore, blended ion exchange resin or heat-stable strong-acid cation-exchange resin have been piled up in the ion-exchanger 26.In this equipment, under maintenance pyritous state, flow through the heat-resisting strong-acid cation-exchange resin of heat-stable mixture iron exchange resin bed or ion-exchanger 26 by 75 ℃ of ultra-high purity waters of vaporizer 22 acquisitions, obtain very low ion content ground thus and from water, removed metal ion, produced its quality thus and be equal to 75 ℃ of high temperature ultra-high purity waters in the analysis quality of the water in the soft water heat exchanger exit shown in the table 3.
The high temperature ultra-high purity water that is come out by device fabrication of the present invention has low dissolved axygen concentration and contains the metal ion of not removing on a small quantity, therefore, it not only is used as the washing lotion of clean liquid, and is used as prevention is produced the soup on the such surface of soup, the etching of natural oxide film or removed metallic impurity from natural oxide film surface on silicon face soup.
The embodiment of the soup preparation system when following the high temperature ultra-high purity water of describing by high temperature ultra-high purity water production device fabrication of the present invention and being used as soup.
Fig. 9 shows first embodiment of soup preparation system of the present invention.Referring to this figure, system comprises that a high temperature ultra-high purity water of the present invention produces equipment 31, one and be used to make high temperature ultra-high purity water that equipment 31 produces at high temperature through wherein so that obtain the aquatic product device 32 of electrolyte ion of high-temperature electrolysis matter ionized water.Ionized water production equipment 32 comprises an anode 43, negative electrode 44, an opposed ion-exchange membrane 45, is deposited in the ion exchange resin 46 between the film 45, and wherein film 45 and resin 46 are sandwiched between the electrode 43,44.The ultra-high purity water of being produced equipment 31 productions by ultra-high purity water of the present invention flows through ionized water production equipment 32 under the condition of high temperature, can obtain high-temperature electrolysis matter ionized water (electrolytic anode power and water Xie Yinjishui) thus.Anode water is supplied to a soup storage container 33 that is equipped with first recycle pump 36, and negative electrode water is supplied to a soup storage container 34 that is equipped with second recycle pump 36, and the high temperature ultra-high purity water is fed to ultra-high purity water rinse bath 35.
Figure 10 shows second embodiment of soup preparation system of the present invention.Referring to this figure, this system comprise a high temperature ultra-high purity water of the present invention produce equipment 31, flow velocity supply unchangeably the water supply installation of the high temperature ultra-high purity water of producing by equipment 31, flow velocity unchangeably the chemical substance automatic supply device 38, one of the supplying chemical material mixing device 39, that are used to mix high temperature ultra-high purity water and chemical substance be used for the temperature adjustment heat exchanger 40 that has the soup heating of ideal concentration or be cooled to ideal temperature formed.
High temperature ultra-high purity water of being produced by equipment 31 and chemicals are supplied to the upstream position of mixing device 39 with different in flow rate and such proportioning by water supply installation 37 and chemical substance automatic supply device 38 respectively, have promptly obtained predetermined concentration thus and have made their thorough mixing by mixing device.Mixing device 39 is line mixer preferably, and it need not to the soup that is adjusted to predetermined concentration is provided with special feeding mechanism, but it comprises the hold-up vessel of a band stirring parts and pump.Can from head tank, export chemical substance with nitrogen with forcing.Soup with ideal concentration is adjusted to proper temperature by the heat exchanger 40 that is arranged on mixing device 39 downstreams.The soup that is adjusted to ideal concentration is being lower than the heating that is subjected to heat exchanger 40 under the situation of ideal temperature, but is higher than ideal temperature as it, and then heat exchanger 40 coolings are adjusted to the soup of allotment ideal concentration.Other heating means comprise electrically heated and steam heating.In order to cool off, can use cold water from cooling tower or condenser.The soup that has been adjusted to ideal concentration and temperature is supplied with one unchangeably continuously by flow velocity and has been equipped with recycle pump 36 and is contained in the soup storage container 42 in the clean container 41.The high temperature ultra-high purity water is supplied to ultra-high purity water clean container 35.With the soup of speed from the discharge opeing side extraction container 42 of pump 36 that equals supply rate.The supply rate of giving container 42 supply soups be by output with handle number of wafers or decide corresponding to the relation between the impurity concentration in the container 42 of processing number of wafers.
Figure 11 shows the 3rd embodiment of soup preparation system of the present invention.The difference of this system and second embodiment is, has saved temperature adjustment heat exchanger 40 as shown in figure.In this system, produce high temperature ultra-high purity water and the chemical substance that equipment 31 produces by the high temperature ultra-high purity water and supplied with the upstream position of mixing devices 39 with constant flow velocity and with such proportioning by high temperature superelevation water water supply installation 37 and chemical substance automatic supply device 38 respectively, thereby produced ideal concentration and made the soup that has obtained to have ideal temperature behind their thorough mixing by mixing device 39.In the figure of expression second embodiment and the 3rd embodiment, same parts represents not to be repeated in this description them with identical reference number.
Figure 12 shows the 4th embodiment of soup preparation system of the present invention.Referring to this figure, this system does not have mixing device 39.Produce high temperature ultra-high purity water and the chemical substance that equipment 31 is produced by high temperature ultra-high purity water of the present invention, being sent into one with constant flow velocity and a kind of proportioning by high temperature ultra-high purity water water supply installation 37 and chemical substance automatic supply device 38 respectively has been equipped with recycle pump 36 and has been contained in the soup storage container 42 in the clean container 41 soup that has obtained to have ideal concentration by this proportioning.
Under the situation of soup preparation system of the present invention, to be not limited to the aqueous chemical material with high temperature ultra-high purity water blended chemical reagent, at these chemical preparationss that cleans as the wafer that is used for semiconductor fabrication process, can directly force gas material or the oxic gas body image of wanting gaseous state storage and supply originally to enter like that in the high temperature ultra-high purity water of producing by high temperature ultra-high purity water production equipment 31 of the present invention and, promptly can obtain ideal concentration under this ratio and follow the described mixed solution of supply under the ideal temperature with a kind of like this mixed.
Industrial applicibility
As mentioned above, utilize high temperature ultra-high purity water production equipment of the present invention to be applicable to prepare the high temperature ultra-high purity water that has in the cleaning-drying effect that has obvious raising aspect the wafer cleaning of semiconductor making method.

Claims (7)

1. a high temperature ultra-high purity water is produced equipment, the 1 st pure water that comprises a pretreated water that is used for handling obtaining by direct filtration and degasification or obtain by primary pure water system is so that obtain the vaporizer of high temperature ultra-high purity water, the electronic deionization interchanger of solid stream of water type that is used for removing metal ion from ultra-high purity water that vaporizer obtains, the electronic deionization interchanger of this solid stream of water type is piled up Zeo-karb and anionite-exchange resin in the central water route that is formed by cationic exchange membrane and anion-exchange membrane, the outside that is formed on cationic exchange membrane in addition has anion-exchange membrane, the water route, the outside that has cationic exchange membrane in the outside of anion-exchange membrane, also pile up ion exchange resin in water route, the outside, with central water route as the condensed water water route, with water route, the outside as the processed water water route, the outside in the water route in the outside, cationic exchange membrane with the outside adds electric field as negative pole ground, thereby can carry out the successive ion exchange treatment.
2. high temperature ultra-high purity water as claimed in claim 1 is produced equipment, and the Zeo-karb and the anionite-exchange resin that are deposited in the water route replace with cation exchange fibre and anion-exchange fibre respectively.
3. high temperature ultra-high purity water as claimed in claim 1 is produced equipment, it is characterized in that, also comprise one be used to make obtain by vaporizer and contain the soft water heat exchanger that the high temperature ultra-high purity water of not removing metal ion is accepted heat exchange, wherein said ultra-high purity water has usual temperature and its metal ion is removed by the ion-exchanger processing, before being sent to ion-exchanger, cooled off thus and contained the high temperature ultra-high purity water of not removing metal ion, and heated this normal temperature ultra-high purity water.
4. high temperature ultra-high purity water as claimed in claim 3 is produced equipment, it is characterized in that, comprise that also one is used for being cooled to below 40 ℃ so that be used as the cooling heat exchanger of the feedwater of ion-exchanger containing the metal ion of not removing and being subjected to soft water heat exchanger refrigerative ultra-high purity water.
5. high temperature ultra-high purity water as claimed in claim 3 is produced equipment, it is characterized in that, soft water heat exchanger has a liquid contacting part branch that is made of titanium, the anti-oxidant stainless steel made by electropolishing.
6. high temperature ultra-high purity water as claimed in claim 4 is produced equipment, it is characterized in that, soft water heat exchanger has a liquid contacting part branch that is made of titanium, the anti-oxidant stainless steel made by electropolishing.
7. high temperature ultra-high purity water as claimed in claim 4 is produced equipment, it is characterized in that cooling heat exchanger has a liquid contacting part branch of being made by stainless steel, titanium or anti-oxidant stainless steel.
CNB988112922A 1997-03-31 1998-09-18 Ultra-purity water producing apparatus by high temperature process and chemical liquid preparing system including the same Expired - Fee Related CN1163418C (en)

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