CN116338317A - Resistance measuring method - Google Patents
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- CN116338317A CN116338317A CN202310494990.8A CN202310494990A CN116338317A CN 116338317 A CN116338317 A CN 116338317A CN 202310494990 A CN202310494990 A CN 202310494990A CN 116338317 A CN116338317 A CN 116338317A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000000523 sample Substances 0.000 claims abstract description 188
- 238000005259 measurement Methods 0.000 claims abstract description 70
- 239000010408 film Substances 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 29
- 238000007650 screen-printing Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000691 measurement method Methods 0.000 description 7
- 238000005476 soldering Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical group [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011814 protection agent Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a resistance measuring method which is applied to a circuit element with resistance characteristics, wherein the circuit element comprises a resistance part and an electrode connecting part; the method comprises the following steps: step S100: a probe alignment layer is arranged on one side of the at least two electrode connecting parts, which is used for connecting with a measuring probe of the measuring equipment, and the probe alignment layer comprises a probe effective area and a probe ineffective area; wherein the probe effective area is for contacting the measurement probe with the electrode connection portion; the probe invalid region is used for isolating contact between the measuring probe and the electrode connecting part; step S300: the electrode connection portion is contacted by the measuring probe through the probe effective area, and the resistance value of the circuit element is measured by the measuring device. The invention can ensure the accuracy of resistance measurement, thereby ensuring the performance of the integrated circuit.
Description
Technical Field
The invention relates to the technical field of resistance detection, in particular to a resistance measuring method.
Background
To ensure performance of an integrated circuit, parameters of various devices in the integrated circuit need to be tested. A circuit element having a resistance characteristic such as a resistance element or a shunt needs to have its resistance value measured accurately. A typical circuit element with a resistive characteristic is shown in fig. 1 (the left drawing includes two electrode connection portions, the right drawing includes four electrode connection portions), and includes an electrode connection portion 1 and a resistive portion 2, wherein the electrode connection portion 1 is provided with an even number and is connected to the resistive portion 2, and typically two or four electrode connection portions 1. The resistance part 2 is used as a conductive structure layer, the specific resistance of the circuit element is directly related to the size and the composition materials of the resistance part 2, and the composition materials of the resistance part 2 have certain resistivity, so that the circuit element presents resistivity. The electrode connection portion 1 mainly serves as a connection medium between the circuit element and the integrated circuit.
In the related art, the resistance measurement mode is to contact two measurement probes of a measurement device with two electrode connection parts respectively, apply a voltage or a current, measure a corresponding current or voltage by the measurement device, and calculate the resistance by using ohm's law. However, experiments show that small deviation often exists between measurement results obtained by multiple measurements of the same circuit element with the resistance characteristics, so that the resistance value of the circuit element cannot be accurately determined. In order to further ensure the performance of the integrated circuit, it is particularly important to ensure the accuracy of the resistance measurement.
Disclosure of Invention
The invention mainly aims to provide a resistance measuring method, which aims to ensure the accuracy of resistance measurement and further ensure the performance of an integrated circuit.
In order to achieve the above object, the present invention provides a resistance measuring method applied to a circuit element having a resistance characteristic, wherein the circuit element includes a resistance portion and electrode connection portions, and the electrode connection portions are provided in an even number and connected to the resistance portion; the method comprises the following steps:
step S100: a probe alignment layer is arranged on one side of the at least two electrode connecting parts, which is used for connecting with a measuring probe of the measuring equipment, and the probe alignment layer comprises a probe effective area and a probe ineffective area; wherein the probe effective area is for contacting the measurement probe with the electrode connection portion; the probe invalid region is used for isolating contact between the measuring probe and the electrode connecting part;
step S300: the electrode connection portion is contacted by the measuring probe through the probe effective area, and the resistance value of the circuit element is measured by the measuring device.
Optionally, the area of the probe effective area is 1-1.2 times of the end area of the measurement probe.
Optionally, the contour shape of the probe active area corresponds to the end shape of the measurement probe.
Optionally, the probe effective region is formed by surrounding a plurality of the probe ineffective regions.
Optionally, the probe null region is formed using an insulating material.
Optionally, the probe effective regions are located at a central region of the electrode connection parts, and the probe effective regions on each electrode connection part are symmetrically disposed about a middle of the resistor.
Optionally, in step S100, the following steps are included:
step S110: forming a first thin film layer on the electrode connection part;
step S120: dividing a first area and a second area on the first film layer;
step S130: and processing the first area and the second area to form the effective probe area and the ineffective probe area respectively.
Optionally, in step S100, the following steps are included:
step S140: setting an opening area on the screen plate;
step S150: and (3) carrying out screen printing on the first solution on the electrode connecting part through the screen, wherein an opening area of the screen corresponds to the probe invalid area, and otherwise, the opening area is the probe valid area.
Optionally, in step S100, the following steps are included:
step S160: dividing a third region and a fourth region on the electrode connection portion;
step S170: forming a second thin film layer on the third region;
step S180: forming a third thin film layer on the fourth region, the third thin film layer being defined as the probe inactive area;
step S190: the second film layer is removed to form the probe active region.
Optionally, in step S100, the following steps are included:
step S200: forming a fourth thin film layer on the electrode connection part;
step S210: dividing a fifth region and a sixth region on the fourth film layer;
step S220: forming a fifth thin film layer on the fifth region, defining the fifth thin film layer as the probe inactive area;
step S230: and removing the fourth film layer to form the probe effective area.
Optionally, after step S300, the following steps are included:
step S400: and removing the probe alignment layer after the resistance value measurement is finished.
Compared with the prior art, the invention has the beneficial effects that:
for the reason that in the related art, small deviation often exists between measurement results obtained by carrying out multiple measurements on the same circuit element with resistance characteristics, the applicant finds that the deviation exists in the positions of contact points on the connection part of the measurement probe and the electrode in each measurement process. For easy understanding, referring to fig. 2, when the electrode connection portion is large enough and the end of the measurement probe is small enough, reference is made to fig. 2, in which the black dots in the a and b diagrams represent the contact points between the electrode connection portion and the measurement probe, and when the contact points between the measurement probes on the two electrode connection portions in the a diagram are closer, the transmission path x of the current on the resistance portion is correspondingly shorter; when the distance between the contact points of the measuring probes on the two electrode connecting parts in the diagram b is longer, the transmission path y of the current on the resistance part is correspondingly longer; since the resistance is related to the dimension and length of the resistance portion, there is a slight deviation in the resistance measurement results in the two diagrams a and b.
Based on the research, the invention discloses a resistance measuring method, specifically, a probe alignment layer is formed on at least two electrode connecting parts through various processing technologies, wherein the probe alignment layer comprises a probe effective area and a probe ineffective area; and then the measuring probe is used for contacting the electrode connecting part through the probe effective area, and the resistance value of the circuit element is measured through the measuring equipment. Because the probe invalid region isolates the contact between the measuring probe and the electrode connecting part, the contact point of the measuring probe must be positioned in the probe valid region when the resistance value measurement is carried out, and if the measuring probe is deviated, the resistance value result cannot be obtained. Therefore, the measurement results of the resistance measurement can be kept consistent no matter how many times of the resistance measurement are carried out, the error in the resistance measurement is reduced to the maximum extent, the accuracy of the resistance measurement is ensured, and the performance of the integrated circuit is ensured.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a resistor structure;
FIG. 2 is a schematic diagram of resistance measurement;
FIG. 3 is a schematic diagram of a structure of an embodiment of a resistance measurement method according to the present invention (top view, bottom view);
FIG. 4 is a schematic diagram of a resistance measurement method according to an embodiment of the present invention;
FIG. 5 is a flowchart showing steps of an embodiment of a resistance measurement method according to the present invention;
FIG. 6 is a flowchart illustrating a second step of an embodiment of a resistance measurement method according to the present invention;
FIG. 7 is a flowchart illustrating a third step of an embodiment of a resistance measurement method according to the present invention;
FIG. 8 is a flowchart illustrating a method for measuring resistance according to an embodiment of the present invention;
FIG. 9 is a flowchart showing steps of a method for measuring resistance according to an embodiment of the present invention;
FIG. 10 is a flowchart illustrating steps of a method for measuring resistance according to an embodiment of the present invention.
The names of the components marked in the figures are as follows:
1. an electrode connection part; 2. a resistance part; 3. a probe alignment layer; 301. a probe active region; 302. a probe null region; 4. a measurement probe;
the achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the present invention will be made more fully hereinafter with reference to the accompanying drawings, in which it is shown, however, some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
For the reason that in the related art, there is often a small deviation between measurement results obtained by performing multiple measurements on the same circuit element having a resistance characteristic, the applicant found in long-term experimental study that the deviation is mainly caused by the position of the contact point between the measurement probe 4 and the electrode connection part 1 in each measurement process. For easy understanding, referring to fig. 2, when the electrode connection portion 1 is large enough and the end portion of the measurement probe 4 is small enough, reference is made to fig. 2 for two cases a and b, wherein the black dots in the figures a and b represent the contact points between the electrode connection portion 1 and the measurement probe 4, and when the contact points between the measurement probes 4 on the two electrode connection portions 1 in the figure a are closer, the transmission path x of the current on the resistance portion 2 is correspondingly shorter; when the distance between the contact points of the measuring probes 4 on the two electrode connecting parts 1 in the diagram b is longer, the transmission path y of the current on the resistance part 2 is correspondingly longer; since the resistance value is related to the dimension length of the resistance value portion 2, there is caused a slight deviation in the resistance value measurement results in the two figures a and b.
Based on the above-described findings, the present embodiment discloses a resistance value measurement method applied to a circuit element having a resistance characteristic, wherein the circuit element includes a resistance value portion 2 and electrode connection portions 1, and the electrode connection portions 1 are provided in an even number and are connected to the resistance value portion 2; referring to fig. 3, the method comprises the following steps:
step S100: a probe alignment layer 3 is arranged on one side of at least two electrode connecting parts 1 for connecting with a measuring probe 4 of the measuring equipment, and the probe alignment layer 3 comprises a probe effective area 301 and a probe ineffective area 302; wherein the probe effective area 301 is for bringing the measurement probe 4 into contact with the electrode connection part 1; the probe inactive area 302 is used for isolating the contact between the measurement probe 4 and the electrode connecting part 1;
step S300: the electrode connection portion 1 is contacted through the probe effective region 301 by the measurement probe 4, and the resistance value of the circuit element is measured by the measurement apparatus.
In this embodiment, a probe alignment layer 3 is formed on at least two electrode connection portions 1 through various processing techniques, wherein the probe alignment layer 3 includes a probe effective region 301 and a probe ineffective region 302; the electrode connection part 1 is contacted by the measuring probe 4 through the probe effective area 301, and the resistance value of the circuit element is measured by the measuring device. Since the probe ineffective area 302 isolates the contact between the measurement probe 4 and the electrode connection portion 1, the contact point of the measurement probe 4 must be located in the probe effective area 301 when the resistance measurement is performed, and if the measurement probe is shifted, the resistance result cannot be obtained. Therefore, the measurement results of the resistance measurement can be kept consistent no matter how many times of the resistance measurement are carried out, the error in the resistance measurement is reduced to the maximum extent, the accuracy of the resistance measurement is ensured, and the performance of the integrated circuit is ensured.
It should be noted that the above problem cause discovery and solution thinking process belong to the intelligent crystallization of the present inventors, and are also one of the inventions of the present invention. In evaluating the inventive process, the above problem cause discovery and solution thinking process should also be included in the evaluation scope.
Further, the area of the probe effective region 301 is 1 to 1.2 times the end area of the measurement probe 4. By means of the above technical scheme, the measurement probe 4 and the probe effective area 301 are in clearance fit, so that the measurement probe 4 can smoothly pass through the probe effective area 301 and mutually contact with the electrode connecting portion 1, and resistance measurement work can be performed.
Further, the outline shape of the probe effective region 301 coincides with the end shape of the measurement probe 4. By the above technical scheme, the probe effective area 301 and the end shape of the measurement probe 4 are kept consistent, that is, if the end shape of the measurement probe 4 is round or square, the outline shape of the probe effective area 301 is correspondingly set to be round or square.
Further, the probe effective region 301 is composed of a plurality of probe ineffective regions 302 surrounded. Thus, as shown in fig. 4, the probe ineffective area 302 is composed of a plurality of L-shaped structures, wherein the middle area surrounded by the L-shaped structures is the probe effective area 301, and the positioning function of the measurement probe 4 is realized through the probe ineffective area 302 of the L-shaped structures, so that the usage amount of manufacturing materials of the probe ineffective area 302 is saved, and the enterprise cost is reduced.
Further, the probe inactive area 302 is formed using an insulating material. So set up, ensure through above-mentioned technical scheme that the contact between the invalid region 302 of probe can effectively keep apart measurement probe 4 and electrode connecting portion 1, it can be understood that when the invalid region 302 of probe is contacted to measurement probe 4, because the invalid region 302 of probe is insulating material, the electric current of measuring equipment can't transmit to electrode connecting portion 1 for resistance measurement work can't go on. Only when the measuring probe 4 passes through the probe active area 301 and contacts the electrode connection part 1, the current of the measuring device can be transmitted to the electrode connection part 1 for resistance measurement. The contact of the measuring probe 4 on a designated area is fundamentally ensured, so that the accuracy of resistance measurement is ensured.
Further, the probe effective regions 301 are located at the central region of the electrode connection parts 1, and the probe effective regions 301 on each electrode connection part 1 are symmetrically arranged about the middle of the resistor. So set up, in order to ensure the standardization of each resistance measurement to the resistance of multiple models, carry out the above-mentioned restriction to the specific position of probe effective area 301, avoid appearing the resistance the same condition because of the position of probe effective area 301 is different to the resistance of two kinds of different models. It should be noted that, during the specific operation, the specific position of the probe effective area 301 needs to be selected in combination with the actual situation. For example, when the circuit element is connected to the integrated circuit at the edge of the electrode connection portion 1, the probe effective area 301 can be correspondingly disposed at the edge of the electrode connection portion 1, so that the measurement result is consistent with the actual resistance in the actual use process, and the resistance measurement has a practical value.
Further, the thickness of the probe inactive area 302 is 0.1um to 100um. So configured, by specifically limiting the thickness of the probe inactive area 302, the probe inactive area 302 is prevented from being too thin or too thick.
Further, referring to fig. 6, corresponding to the following embodiments 1 to 4, in step S100, the steps are included as follows:
step S110: forming a first thin film layer on the electrode connection part;
step S120: dividing a first area and a second area on the first film layer;
step S130: and processing the first area and the second area to form the effective probe area and the ineffective probe area respectively.
Further, referring to fig. 7, corresponding to the following examples 5 to 6, in step S100, the steps are as follows:
step S140: setting an opening area on the screen plate;
step S150: and (3) carrying out screen printing on the first solution on the electrode connecting part through the screen, wherein an opening area of the screen corresponds to the probe invalid area, and otherwise, the opening area is the probe valid area.
Further, referring to fig. 8, corresponding to embodiment 7 below, in step S100, the steps include:
step S160: dividing a third region and a fourth region on the electrode connection portion;
step S170: forming a second thin film layer on the third region;
step S180: forming a third thin film layer on the fourth region, the third thin film layer being defined as the probe inactive area;
step S190: the second film layer is removed to form the probe active region.
Further, referring to fig. 9, corresponding to embodiment 8 below, in step S100, the following steps are included:
step S200: forming a fourth thin film layer on the electrode connection part;
step S210: dividing a fifth region and a sixth region on the fourth film layer;
step S220: forming a fifth thin film layer on the fifth region, defining the fifth thin film layer as the probe inactive area;
step S230: and removing the fourth film layer to form the probe effective area.
Further, referring to fig. 10, after step S300, the following steps are further included:
step S400: and removing the probe alignment layer after the resistance value measurement is finished.
After the resistance value is measured, the probe alignment layer is removed by a processing technology according to requirements, so that the electrode connection part is completely exposed, and the current transmission effect of the circuit element is ensured in the process of mounting the resistance element and the semiconductor integrated circuit.
When the soldering flux is adopted for screen printing, the probe alignment layer can not be removed, and besides the soldering flux can be used as an insulating material of a probe ineffective area, the soldering flux can also be used as a soldering material in the process of mounting a circuit element and a semiconductor integrated circuit, so that the soldering flux does not need to be removed.
Based on the above technical solutions, the present application proposes the following embodiments for step S100 thereof:
example 1:
step S110: coating a photoresist solution on the electrode connection part in a coating manner, and then performing heating treatment to form the first film layer; the positive photoresist AZ P4620 is used as the photoresist solution, and has higher resolution than the negative photoresist, so that the processed probe alignment layer has higher fineness, and the positive photoresist is selected. The heating treatment temperature is 110 ℃, and the heating time is 80s;
step S120: dividing a first area and a second area on the first film layer;
step S130: exposing the first region with exposure energy of 1500mJ/cm 2 : and then developing the first area and the second area to form the probe effective area and the second area to form the probe ineffective area, wherein the developer model is AZ 400 MIF, and the developing time is 300s.
Example 2:
step S110: attaching a photoresist film to the electrode connecting part in a pasting mode to form the first film layer; wherein the model of the photoresist film is negative photoresist UDH5425; since the resist is of negative type, the areas where the probe effective area and the probe ineffective area are located are opposite to those of positive type resist.
Step S120: dividing a first area and a second area on the first film layer;
step S130: exposing the first region with 45 mJ/cm exposure energy 2 : then developing the first area and the second area to form the probe ineffective area and the second area to form the probe effective area; wherein the developer is NaOH solution with the concentration of 3 percent, and the development time is 37s.
Example 3:
step S110: coating a first ink on the electrode connecting part in a screen printing mode, and then performing heating treatment to form a first film layer; wherein the model of the first ink is HD-500L, the heating treatment temperature is 75 ℃, and the heating time is 20min; since the chemical properties of the first ink are similar to those of the negative photoresist in example 2, the following steps can be referred to in the case of example 2, and are specifically as follows:
step S120: dividing a first area and a second area on the first film layer;
step S130: exposing the first region with exposure energy of 700 mJ/cm 2 : then developing and heating the first area and the second area to form the probe ineffective area and the second area to form the probe effective area; wherein the developer type is 1wt% Na 2 CO 3 Solution, development time 30s; the heating treatment temperature is 150 ℃ and the heating time is 60min.
Example 4:
step S110: forming the first thin film layer on the electrode connection part by depositing a silicon dioxide solution; specifically, the organic silicon precursor (siloxane, methyl silane) and the oxidant O2 are deposited into a silicon dioxide film (density 1.5g/cm 3), namely a first film layer, wherein the deposition method comprises, but is not limited to, physical vapor deposition, chemical vapor deposition, atomic layer deposition and the like;
step S120: dividing a first area and a second area on the first film layer;
step S130: and etching the first area to form the probe effective area, and defining the second area which is not subjected to etching treatment as the probe ineffective area. Since the silicon dioxide film is nonconductive, it can be defined as a probe null region. The etching process is performed on the silicon dioxide film by using gas such as fluorocarbon gas such as CF4, CHF3, C2F6 and C3F8, using argon gas to increase the bombardment effect in plasma environment to achieve non-equal etching, or using BOE liquid medicine in wet etching process to perform isotropic etching, wherein the etching area is defined as the effective area of the probe, otherwise defined as the ineffective area of the probe.
Example 5:
step S140: setting an opening area on the screen plate;
step S150: printing second ink on the electrode connecting part in a mode of combining screen printing and heating treatment, wherein an opening area of the screen corresponds to the probe invalid area, and otherwise, the opening area is the probe valid area; wherein the second ink has a type E2138 and a viscosity 25000mpas; the heating treatment temperature is 100 ℃ and the heating time is 60min.
Example 6:
step S140: setting an opening area on the screen plate;
step S150: printing soldering flux on the electrode connecting part in a screen printing mode, wherein an opening area of the screen corresponds to the probe invalid area, otherwise, the opening area is the probe valid area; the scaling powder model is 43T, and the mesh specification of the screen is 110mesh.
Example 7:
step S160: dividing a third region and a fourth region on the electrode connection portion;
step S170: forming a second thin film layer on the third region; specifically, screen printing ink HD-500L 500mJ/cm is adopted 2 Pre-baking at 75deg.C/20 min. Exposure energy 700 mJ/cm 2 . Developer 1wt% Na 2 CO 3 . Temperature: 30 ℃. Time 60s. And (3) baking: and at 150 ℃ for 60min.
Step S180: forming a third thin film layer on the fourth region, the third thin film layer being defined as the probe inactive area; specifically, the circuit element is soaked in an OSP solution for 3min, then is taken out, and is cleaned by pure water for 3min, so that the whole surface of the circuit element is covered with a layer of OSP film with 0.1-0.5 um, namely a fourth film layer; wherein the model of the OSP solution is KL506; meanwhile, because of incompatibility between the OSP solution and the screen printing ink, the OSP solution only forms a third film layer on the fourth area, but does not form the third film layer on the second film layer made of the screen printing ink;
step S190: removing the second film layer to form the probe effective region; specifically, the purpose of removing the second film layer is achieved by removing the ink, wherein the mode of removing the ink can be used for stripping the film by a sodium hydroxide strong alkali solution.
Example 8:
step S200: forming a fourth thin film layer on the electrode connection part; specifically, the circuit element is soaked in an OSP solution for 3min, then is taken out, and is cleaned by pure water for 3min, so that the whole surface of the circuit element is covered with a layer of OSP film with 0.1-0.5 um, namely a fourth film layer; wherein the model of the OSP solution is KL506;
step S210: dividing a fifth region and a sixth region on the fourth film layer;
step S220: forming a fifth thin film layer on the fifth region, defining the fifth thin film layer as the probe inactive area; specifically, screen printing ink HD-500L 500mJ/cm is used 2 Pre-baking at 75deg.C/20 min. The exposure energy was 700 mJ/cm 2. Developer 1wt% Na 2 CO 3 . Temperature: 30 ℃. Time 60s. And (3) baking: and at 150 ℃ for 60min.
Step S230: removing the fourth film layer to form the probe effective region; specifically, the circuit element was immersed in a 20% HCl solution for 2 minutes to remove the fourth thin film layer.
The above embodiments 1-6 are directed to the resistor element, and the embodiments 7-8 are directed to the shunt, and the main difference between them is that the circuit element is soaked by using the OSP solution in the processing procedure of the embodiments 7-8, because the electrode connection portion of a part of the shunt needs to be provided with a screw hole, and the screw hole is used to increase the adhesion between the separator and the circuit board of the integrated circuit, so that the shunt is only provided with copper, but not with nickel and tin, and the connection between the resistor element and the integrated circuit is soldering, therefore, the nickel layer and the tin layer are generally arranged on the copper layer, and the protection of the copper layer is realized by the nickel layer and the tin layer. The OSP solution is also called an organic copper protection agent, so that copper can be effectively protected, and the shunt is soaked in the OSP solution, so that the copper layer in the shunt can be protected while the probe alignment layer is realized, and two purposes are achieved.
It should be noted that other contents of the resistance measurement method disclosed in the present invention are related art, and are not described herein.
In addition, it should be noted that, if there is a directional indication (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention, the directional indication is merely used to explain the relative positional relationship, movement condition, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indication is correspondingly changed.
Furthermore, it should be noted that the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The foregoing is merely an alternative embodiment of the present invention, and is not intended to limit the scope of the present invention, and all applications of the present invention directly/indirectly in other related technical fields are included in the scope of the present invention.
Claims (10)
1. The resistance measuring method is applied to a circuit element with resistance characteristics, wherein the circuit element comprises a resistance part and electrode connecting parts, and the electrode connecting parts are provided with an even number and are connected with the resistance part; the method is characterized by comprising the following steps of:
step S100: a probe alignment layer is arranged on one side of the at least two electrode connecting parts, which is used for connecting with a measuring probe of the measuring equipment, and the probe alignment layer comprises a probe effective area and a probe ineffective area; wherein the probe effective area is for contacting the measurement probe with the electrode connection portion; the probe invalid region is used for isolating contact between the measuring probe and the electrode connecting part;
step S300: the electrode connection portion is contacted by the measuring probe through the probe effective area, and the resistance value of the circuit element is measured by the measuring device.
2. The resistance measuring method according to claim 1, wherein: the area of the probe effective area is 1-1.2 times of the end area of the measuring probe.
3. The resistance measuring method according to claim 1, wherein: the outline shape of the probe effective area is consistent with the end shape of the measuring probe.
4. The resistance measuring method according to claim 1, wherein: the probe effective region is formed by surrounding a plurality of probe ineffective regions.
5. The resistance measuring method according to claim 1, wherein: the probe effective areas are located in the central area of the electrode connection parts, and the probe effective areas on each electrode connection part are symmetrically arranged about the middle of the resistor.
6. The resistance measuring method according to any one of claims 1 to 5, wherein: in step S100, the steps of:
step S110: forming a first thin film layer on the electrode connection part;
step S120: dividing a first area and a second area on the first film layer;
step S130: and processing the first area and the second area to form the effective probe area and the ineffective probe area respectively.
7. The resistance measuring method according to any one of claims 1 to 5, wherein: in step S100, the steps of:
step S140: setting an opening area on the screen plate;
step S150: and (3) carrying out screen printing on the first solution on the electrode connecting part through the screen, wherein an opening area of the screen corresponds to the probe invalid area, and otherwise, the opening area is the probe valid area.
8. The resistance measuring method according to any one of claims 1 to 5, wherein: in step S100, the steps of:
step S160: dividing a third region and a fourth region on the electrode connection portion;
step S170: forming a second thin film layer on the third region;
step S180: forming a third thin film layer on the fourth region, the third thin film layer being defined as the probe inactive area;
step S190: the second film layer is removed to form the probe active region.
9. The resistance measuring method according to any one of claims 1 to 5, wherein: in step S100, the steps of:
step S200: forming a fourth thin film layer on the electrode connection part;
step S210: dividing a fifth region and a sixth region on the fourth film layer;
step S220: forming a fifth thin film layer on the fifth region, defining the fifth thin film layer as the probe inactive area;
step S230: and removing the fourth film layer to form the probe effective area.
10. The resistance measuring method according to claim 1, wherein: after step S300, the method further includes the steps of:
step S400: and removing the probe alignment layer after the resistance value measurement is finished.
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| CN202310494990.8A CN116338317A (en) | 2023-05-05 | 2023-05-05 | Resistance measuring method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310494990.8A CN116338317A (en) | 2023-05-05 | 2023-05-05 | Resistance measuring method |
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| CN202310494990.8A Pending CN116338317A (en) | 2023-05-05 | 2023-05-05 | Resistance measuring method |
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