CN116337320A - Film vacuum gauge, plasma processing equipment and method for measuring vacuum degree in reaction cavity - Google Patents
Film vacuum gauge, plasma processing equipment and method for measuring vacuum degree in reaction cavity Download PDFInfo
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- CN116337320A CN116337320A CN202111599495.0A CN202111599495A CN116337320A CN 116337320 A CN116337320 A CN 116337320A CN 202111599495 A CN202111599495 A CN 202111599495A CN 116337320 A CN116337320 A CN 116337320A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 80
- 238000012545 processing Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 21
- -1 fluorine ions Chemical class 0.000 claims abstract description 35
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 16
- 239000011737 fluorine Substances 0.000 claims abstract description 16
- 238000004891 communication Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 142
- 239000010408 film Substances 0.000 claims description 63
- 239000010409 thin film Substances 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 description 9
- 239000012528 membrane Substances 0.000 description 7
- 229910004014 SiF4 Inorganic materials 0.000 description 6
- 238000009616 inductively coupled plasma Methods 0.000 description 6
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
Abstract
The invention discloses a film vacuum gauge, plasma processing equipment and a method for measuring the vacuum degree of a reaction cavity, wherein the film vacuum gauge is applied to the plasma processing equipment, and the plasma processing equipment comprises the reaction cavity; comprising the following steps: a cavity surrounded by the outer shell, wherein a film for measuring pressure is arranged in the cavity; a gas passage in communication with the cavity, the gas passage being in airtight communication with the reaction chamber; the gas in the reaction cavity enters the cavity through a gas passage and is used for measuring the gas pressure in the reaction cavity; the gas passage absorbs fluorine ions in the gas passing through the gas passage, so that the film in the film vacuum gauge is prevented from being denatured, the stability of the zero point of the film vacuum gauge is ensured, and the accuracy of the vacuum degree measurement in the reaction cavity is improved.
Description
Technical Field
The invention relates to the technical field of plasma treatment, in particular to a film vacuum gauge, plasma treatment equipment and a method for measuring the vacuum degree of a reaction cavity.
Background
Vacuum has been widely used in industrial production in metallurgical, chemical, aerospace, atomic energy accelerator, semiconductor and electrical vacuum manufacturing, so vacuum measurement is also indispensable. With the development of electronic technology in recent years, a change in minute capacitance has been measured, and thus a capacitance type thin film vacuum gauge (Capacitor Diaphragm Gauge) has been rapidly developed.
The capacitance type film vacuum gauge is made according to the principle that elastic detection diaphragm generates strain under the action of pressure difference to cause capacitance change, and mainly consists of two parts of capacitance type film gauge (also called capacitance absolute pressure transducer) and measuring instrument. Compared with other low vacuum measuring instruments, the capacitance type film vacuum gauge has the following characteristics: 1. the full pressure measurement is carried out, the sensitivity is the same for various gases and vapors, regardless of the type of the gas to be measured. 2. The dynamic response time is fast. 3. The measurement range is wide. 4. Remote measurement and control of pressure can be achieved. The output electric signal can be connected with a hundred-meter cable to realize remote measurement of the vacuum system.
For a capacitance type thin film vacuum gauge applied to an ICP machine, in the related art, the ICP machine uses a gas delivery system (Gas Delivery System) to deliver gas into a reaction chamber in the ICP machine, and plasma is generated by RF (radio frequency) excitation, thereby etching a wafer (substrate). A capacitance type film vacuum gauge is arranged on the reaction cavity. The capacitance type film vacuum gauge is used for measuring and controlling the vacuum degree of the reaction cavity in the process. As shown in fig. 1, as the process proceeds, fluorine ions in the plasma continuously permeate into the film 10 of the capacitance type thin film vacuum gauge. The membrane 10 changes its properties, including stress and deformation, due to the permeation of fluoride ions, resulting in a pressure zero drift of the capacitance type thin film vacuum gauge. If the pressure zero drift is to some extent, the pressure that the current process needs to control is affected, resulting in process instability. The current art requires that the pressure zero drift be within 0.3 mTorr.
Disclosure of Invention
The invention aims to provide a film vacuum gauge, plasma processing equipment and a method for measuring the vacuum degree of a reaction cavity, so as to realize the purpose of ensuring the stability of the zero point of the capacitance film vacuum gauge.
In order to achieve the above object, the present invention is realized by the following technical scheme:
a thin film vacuum gauge for use in a plasma processing apparatus comprising a reaction chamber; the film vacuum gauge includes: a cavity surrounded by the outer shell, wherein a film for measuring pressure is arranged in the cavity; a gas passage in communication with the cavity, the gas passage being in airtight communication with the reaction chamber;
the gas in the reaction cavity enters the cavity through the gas passage and is used for measuring the gas pressure in the reaction cavity; the gas passage absorbs fluoride ions in the gas passing therethrough.
Optionally, the housing extends outwards from the cavity to form an inlet, the gas passage comprises an inner part of the inlet, and a gas plug is arranged in the gas passage and used for increasing the contact area between unit gas passing through the gas passage and the inner wall of the gas passage.
Optionally, the gas passage includes: the air plug is positioned in the inlet, and a gap is formed between the outer wall of the air plug and the inner wall of the inlet.
Optionally, the gas passage includes: and a plurality of through holes distributed on the air plug.
Optionally, the through hole is spiral around the air plug.
Optionally, the airlock is made of silicon and/or silicon carbide material.
Optionally, at least part of the surface of the gas passage is coated with a coating for absorbing fluoride ions transported towards the interior of the cavity.
Optionally, the coating is made of silicon and/or silicon carbide material.
Optionally, the aperture of each through hole is less than or equal to 2mm.
Optionally, the length of the air lock is less than or equal to the length of the inlet.
Optionally, the length of the air plug ranges from less than or equal to 60mm.
Optionally, the air plug is movably disposed in the air passage.
Optionally, the gas lock is disposed between the inlet and the reaction chamber.
In another aspect, the present invention also provides a plasma processing apparatus, comprising: the reaction cavity and the gas transmission system are arranged at the top of the reaction cavity and are used for introducing reaction gas into the reaction cavity;
a susceptor positioned below the gas delivery system for carrying a substrate to be processed and exciting the reactant gas into a plasma, the plasma containing fluoride ions;
the thin film vacuum gauge as described above, which is provided on a side wall of the reaction chamber in communication with the inside of the reaction chamber.
Optionally, the reactor further comprises a liner circumferentially arranged around the inside of the reaction chamber, and the gas passage comprises a chamber wall of the reaction chamber and ventilation holes of the liner.
Optionally, a gas plug is disposed in the gas passage, the gas plug is located in a vent hole of a cavity wall of the reaction cavity, and a coating is coated on the gas plug, and the coating is used for absorbing fluorine ions transmitted towards the interior of the cavity.
Optionally, a gas plug is disposed in the gas passage, and the gas plug is made of silicon and/or silicon carbide material.
Optionally, the shell extends out of the cavity to form an inlet, the air plug is sleeved outside the inlet of the film vacuum gauge, and the air plug is in sealing connection with the vent hole of the cavity wall of the reaction cavity.
In yet another aspect, the present invention also provides a method of measuring the vacuum degree of a reaction chamber, by a plasma processing apparatus as described above: absorbing fluoride ions transported into the cavity through the gas passage; and measuring the air pressure in the cavity by adopting the film to obtain the vacuum degree in the reaction cavity.
The invention has at least the following advantages:
according to the film vacuum gauge provided by the invention, the gas passage is provided for absorbing fluorine ions in gas passing through the gas passage, so that the purposes of preventing the fluorine ions from entering, preventing the film in the film vacuum gauge from being denatured, ensuring the zero point stability of the film vacuum gauge and improving the accuracy of vacuum degree measurement in the reaction cavity are realized.
According to the invention, the air plug is arranged in the gas passage and is used for increasing the contact area between the unit gas passing through the gas passage and the inner wall of the gas passage, so that the degree of absorbing fluorine ions can be further improved, and the zero point stability of the film vacuum gauge is further ensured.
According to the invention, the air plug is prepared by adopting silicon and/or silicon carbide materials, so that after the air plug absorbs the fluoride ions, the fluoride ions react with the silicon to form SiF4 gas, the SiF4 gas has no influence on the diaphragm, and the SiF4 gas can be pumped along with the process gas, so that the purposes of not changing the shape of the diaphragm and ensuring the zero point stability of the film vacuum gauge are realized.
The air plug provided by the invention is movably arranged in the air passage, so that the air plug is convenient to assemble and disassemble, equipment maintenance is convenient, and cost is saved.
The surface of the gas passage provided by the invention is coated with the coating, and the coating is used for absorbing fluorine ions transmitted towards the inside of the cavity, so that the purposes of preventing the fluorine ions from entering and preventing the membrane in the film vacuum gauge from being denatured and ensuring the zero point stability of the film vacuum gauge are realized.
Drawings
FIG. 1 is a schematic illustration of fluorine ions in a plasma permeated in a film of a prior art capacitance type film vacuum gauge;
FIG. 2 is a schematic cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a film vacuum gauge according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an air lock of a film vacuum gauge according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an air lock of a film vacuum gauge according to another embodiment of the present invention.
Detailed Description
The invention provides a film vacuum gauge, a plasma processing device and a method for measuring the vacuum pressure of a reaction cavity, which are further described in detail below with reference to the accompanying drawings and the detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
As shown in fig. 2, the present embodiment provides a plasma processing apparatus including: the reaction chamber 100, the gas transmission system, it sets up in reaction chamber 100 top is used for letting in the reaction gas in the reaction chamber 100.
A susceptor 104 positioned below the gas delivery system for carrying a substrate 105 to be processed and for exciting the reactant gas into a plasma 400, the plasma 400 containing fluorine ions.
And a film vacuum gauge 200 provided on a side wall of the reaction chamber 100 and communicating with the inside of the reaction chamber 100.
In this embodiment, the thin film vacuum gauge 200 includes: a cavity 205 surrounded by the housing, the cavity 205 being provided with a membrane for measuring pressure; a gas passage in communication with the cavity 205, which may be in airtight communication with the reaction chamber 100;
the gas in the reaction chamber 100 enters the cavity 205 through the gas passage, so that the gas pressure in the cavity 205 can react with the gas pressure in the reaction chamber 100 for measuring the gas pressure in the reaction chamber 100; the gas passage absorbs fluoride ions in the gas passing therethrough.
Therefore, in the embodiment, the gas passage prevents fluorine ions from entering the film, and prevents the film (film) in the film vacuum gauge from being denatured, so that the stability of the zero point of the film vacuum gauge is ensured, and the accuracy of the vacuum measurement in the reaction cavity is improved.
With continued reference to fig. 2, the present embodiment further includes a liner 103, the liner 103 is circumferentially disposed around the interior of the reaction chamber 100, and the gas passages include the chamber walls of the reaction chamber 100 and ventilation holes on the liner 103.
The gas delivery system includes a central input gas channel 301 at the top of the reaction chamber 100 and side input gas channels 302 disposed on the side wall of the reaction chamber 100 near the top;
the center input gas channel 301 and the side input gas channels 302 input the same or different reaction gases into the reaction chamber 100.
In this embodiment, the plasma processing apparatus may be an inductively coupled plasma reaction device (ICP), and the ICP etching apparatus is an apparatus for generating plasma by coupling energy of a radio frequency power source into the interior of a reaction chamber in a magnetic field through an inductance coil, and for etching. The reaction chamber 100 comprises a substantially cylindrical reaction chamber sidewall made of a metal material, an insulating window 101 is disposed above the reaction chamber sidewall, an inductive coupling coil 102 is disposed above the insulating window 101, a radio frequency power source applies a radio frequency voltage to the inductive coupling coil 102 through a radio frequency matching network, and the reaction gas is ionized into the plasma 400 in combination with the susceptor 104.
As shown in fig. 3, the housing of the thin film vacuum gauge 200 extends from the cavity 205 to the outside to form an inlet 203, the gas passage includes the inside of the inlet 203, and a gas plug 500 is disposed in the gas passage to increase the contact area between the unit gas passing through the gas passage and the inner wall of the gas passage. In some embodiments, the gas lock 500 is disposed inside the inlet 203, and in other embodiments, the gas lock 500 may be disposed outside the inlet 203, for example, between the inlet and a sidewall of the reaction chamber. It is understood that the air lock 500 may further increase the degree of absorbing fluorine ions, so that the zero point stability of the thin film vacuum gauge 200 is further ensured.
In some other embodiments, the gas plug 500 is located inside the inlet, and the gas passage includes: a gap is formed between the outer wall of the air lock 500 and the inner wall of the inlet 203. It follows that the presence of the slit may serve to further increase the contact area of the unit gas passing through the gas passage with the inner wall of the gas passage.
In some other embodiments, as shown in fig. 4, the gas passage includes: a plurality of through holes 501 distributed on the air lock 500. From this, it is understood that the presence of the through hole 501 may serve to further increase the contact area of the unit gas passing through the gas passage with the inner wall of the gas passage. In this embodiment, the aperture of each through hole 501 is less than or equal to 2mm, so that fluorine ions in the gas passing through the through hole 501 can be fully absorbed, and the zero point stability of the thin film vacuum gauge 200 is ensured. The length of the air lock 500 is less than or equal to the length of the inlet 203. In this embodiment, the length of the air lock is in the range of 60mm or less, whereby fluorine ions in the gas passing through the through-hole interior 501 can be more sufficiently absorbed.
In some other embodiments, the through hole is spiral around the air lock. It follows that the presence of this through hole can be used to further increase the contact area of the unit gas passing through the gas passage with the inner wall of the gas passage.
In some other embodiments, the air plug 500 is movably disposed in the air passage, so that the air plug is convenient to disassemble and assemble, is convenient for equipment maintenance, and saves cost.
In some other embodiments, the airlock 500 is fabricated from silicon and/or silicon carbide materials.
Alternatively, it is understood that in some other embodiments, the surface of the gas passageway is at least partially coated with a coating for absorbing fluoride ions transported toward the interior of the cavity 205. In this embodiment, the coating is made of silicon and/or silicon carbide material. Therefore, after the fluoride ions are absorbed by the air plug 500, the fluoride ions react with silicon to form SiF4 gas, the SiF4 gas has no influence on the membrane (film) 206, and the SiF4 gas can be pumped away along with the process gas, so that the purposes of not changing the shape of the membrane and ensuring the zero point stability of the film vacuum gauge are realized.
With continued reference to fig. 3, in this embodiment, the film vacuum gauge 200 is a capacitance film vacuum gauge, the housing of the film vacuum gauge 200 includes a bottom cover 201, a top cover 202 covering the bottom cover 201, a conductive film (film) 207 is disposed on the inner surface of the top cover 202, a standard vacuum chamber is formed between the conductive film 207 and the film or membrane 206, and a capacitance for measuring the pressure in the cavity 205 is formed between the conductive film 207 and the membrane 206. A portion of the cavity 205 facing the reaction chamber is formed between the diaphragm 206 and the bottom cover 201, and the cavity 205 communicates with the inside of the reaction chamber 100 through the gas passage.
With continued reference to fig. 1, in some other embodiments, a gas plug 500 is disposed in the gas passage, and the gas plug 500 is located in the vent hole of the chamber wall of the reaction chamber 100.
Alternatively, the air lock is fixed by being sleeved outside the inlet (for example, the inlet 203 shown in fig. 3) of the film vacuum gauge 200, and then one end of the combined film vacuum gauge 200 with the air lock inlet is inserted into the vent hole of the reaction chamber 100, and the air lock is connected with the vent hole of the chamber wall of the reaction chamber 100 in a sealing manner.
As shown in fig. 1 and 5, in order to absorb fluoride ions in the gas introduced into the thin film vacuum gauge 200, the gas plug may be in the shape of a gas baffle 510, and the gas baffle 510 may be specifically disposed at a vent hole of a cavity wall of the reaction cavity 100, and may be located between the reaction cavity 100 and the liner 103. The gas baffle 510 is distributed with a plurality of gas through holes 511, and the gas through holes 511 are used for absorbing fluorine ions in the gas passing through. In this embodiment, the area of the gas baffle 510 is larger than the cross-sectional area of the vent holes of the chamber wall of the reaction chamber 100. For example, the length and/or width of the gas baffle 510 is less than or equal to 300mm, but the invention is not limited thereto, and the shape of the gas baffle 510 is not limited thereto, and may be various shapes such as a circle or a rectangle.
On the other hand, the present embodiment also provides a method for measuring the vacuum degree of the reaction chamber, which is realized by the plasma processing apparatus as described above: absorbing fluoride ions transported into the cavity 205 through the gas passage; the film is used to measure the air pressure in the cavity 205 to obtain the vacuum degree in the reaction chamber. Namely, the film vacuum gauge in the plasma processing equipment specifically can absorb the fluoride ions in the gas passing through the gas passage, so that the entering of the fluoride ions is prevented, the film in the film vacuum gauge is prevented from being denatured, the stability of the zero point of the film vacuum gauge is ensured, the purpose of improving the accuracy of vacuum measurement in the reaction cavity is finally realized, the stability of the pressure of process control is ensured, and the substrate yield is further improved.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "secured" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (20)
1. A thin film vacuum gauge, characterized in that it is applied in a plasma processing apparatus comprising a reaction chamber; the film vacuum gauge includes:
a cavity surrounded by the outer shell, wherein a film for measuring pressure is arranged in the cavity;
a gas passage in communication with the cavity, the gas passage being in airtight communication with the reaction chamber;
the gas in the reaction cavity enters the cavity through the gas passage and is used for measuring the gas pressure in the reaction cavity; the gas passage absorbs fluoride ions in the gas passing therethrough.
2. The film gauge of claim 1, wherein the housing extends outwardly from the cavity to form an inlet, the gas passage includes an interior of the inlet, and a gas lock is disposed in the gas passage for increasing a contact area of a unit gas passing through the gas passage with an inner wall of the gas passage.
3. The film gauge of claim 2, wherein the gas passage comprises: the air plug is positioned in the inlet, and a gap is formed between the outer wall of the air plug and the inner wall of the inlet.
4. The film gauge of claim 2, wherein the gas passage comprises: and a plurality of through holes distributed on the air plug.
5. The film gauge of claim 4, wherein the through hole is spiral around the air lock.
6. The thin film vacuum gauge of claim 2, wherein the airlock is fabricated from silicon and/or silicon carbide material.
7. The film gauge of claim 1, wherein at least a portion of a surface of the gas passage is coated with a coating for absorbing fluoride ions transported toward the interior of the cavity.
8. The thin film vacuum gauge of claim 7, wherein the coating is made of silicon and/or silicon carbide material.
9. The film gauge of claim 4, wherein each of the through holes has a pore size of less than or equal to 2mm.
10. The film gauge of claim 2, wherein the length of the air lock is less than or equal to the length of the inlet.
11. The film gauge of claim 10, wherein the length of the air lock ranges from less than or equal to 60mm.
12. The film gauge of claim 2, wherein the gas plug is movably disposed within the gas passage.
13. The thin film vacuum gauge of claim 2, wherein the air lock is disposed between the inlet and the reaction chamber.
14. A plasma processing apparatus, comprising: the reaction cavity and the gas transmission system are arranged at the top of the reaction cavity and are used for introducing reaction gas into the reaction cavity;
a susceptor positioned below the gas delivery system for carrying a substrate to be processed and exciting the reactant gas into a plasma, the plasma containing fluoride ions;
15. the thin film vacuum gauge according to any one of claims 1 to 13, which is provided on a side wall of the reaction chamber in communication with an inside of the reaction chamber.
16. The plasma processing apparatus of claim 14 further comprising a liner disposed circumferentially around an interior of the reaction chamber, the gas passageway comprising a chamber wall of the reaction chamber and a vent hole of the liner.
17. The plasma processing apparatus according to claim 15, wherein a gas plug is provided in the gas passage, the gas plug being located in the vent hole of the chamber wall of the reaction chamber, the gas plug being coated with a coating for absorbing fluorine ions transmitted toward the inside of the chamber.
18. The plasma processing apparatus according to claim 15, wherein a gas plug is provided in the gas passage, the gas plug being made of silicon and/or silicon carbide material.
19. The plasma processing apparatus according to claim 15, wherein the housing extends outwardly from the cavity to form an inlet, the gas plug is fitted over the inlet of the thin film vacuum gauge, and the gas plug is hermetically connected to the vent hole of the chamber wall of the reaction chamber.
20. A method of measuring the vacuum degree of a reaction chamber, characterized by being realized by a plasma processing apparatus according to any one of claims 14 to 19:
absorbing fluoride ions transported into the cavity through the gas passage;
and measuring the air pressure in the cavity by adopting the film to obtain the vacuum degree in the reaction cavity.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111599495.0A CN116337320A (en) | 2021-12-24 | 2021-12-24 | Film vacuum gauge, plasma processing equipment and method for measuring vacuum degree in reaction cavity |
| TW111135849A TW202326086A (en) | 2021-12-24 | 2022-09-22 | Diaphragm vacuum gauge, plasma processing equipment and method for measuring vacuum degree in reaction chamber ensuring the stability of the diaphragm vacuum gauge at zero point and improving the accuracy of vacuum measurement in the reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111599495.0A CN116337320A (en) | 2021-12-24 | 2021-12-24 | Film vacuum gauge, plasma processing equipment and method for measuring vacuum degree in reaction cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116337320A true CN116337320A (en) | 2023-06-27 |
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ID=86875116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111599495.0A Pending CN116337320A (en) | 2021-12-24 | 2021-12-24 | Film vacuum gauge, plasma processing equipment and method for measuring vacuum degree in reaction cavity |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN116337320A (en) |
| TW (1) | TW202326086A (en) |
-
2021
- 2021-12-24 CN CN202111599495.0A patent/CN116337320A/en active Pending
-
2022
- 2022-09-22 TW TW111135849A patent/TW202326086A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202326086A (en) | 2023-07-01 |
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