CN116334584A - Vacuum ultraviolet light assisted atomization vapor deposition device and atomization vapor deposition method - Google Patents
Vacuum ultraviolet light assisted atomization vapor deposition device and atomization vapor deposition method Download PDFInfo
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- CN116334584A CN116334584A CN202310552763.6A CN202310552763A CN116334584A CN 116334584 A CN116334584 A CN 116334584A CN 202310552763 A CN202310552763 A CN 202310552763A CN 116334584 A CN116334584 A CN 116334584A
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 103
- 230000005540 biological transmission Effects 0.000 claims abstract description 30
- 239000012159 carrier gas Substances 0.000 claims description 95
- 239000007789 gas Substances 0.000 claims description 67
- 239000003595 mist Substances 0.000 claims description 43
- 239000007788 liquid Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002994 raw material Substances 0.000 claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
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- 238000007599 discharging Methods 0.000 claims description 2
- 239000000443 aerosol Substances 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 23
- 210000001503 joint Anatomy 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 6
- WDJHALXBUFZDSR-UHFFFAOYSA-N Acetoacetic acid Natural products CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- WOWBFOBYOAGEEA-UHFFFAOYSA-N diafenthiuron Chemical compound CC(C)C1=C(NC(=S)NC(C)(C)C)C(C(C)C)=CC(OC=2C=CC=CC=2)=C1 WOWBFOBYOAGEEA-UHFFFAOYSA-N 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
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- JWNBYUSSORDWOT-UHFFFAOYSA-N [Kr]Cl Chemical compound [Kr]Cl JWNBYUSSORDWOT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a vacuum ultraviolet light assisted atomization vapor deposition device and an atomization vapor deposition method. The reaction chamber is provided with a gas inlet and a gas outlet, and is connected with an atomization device through the gas inlet; the top of the reaction chamber is provided with a vacuum ultraviolet transmission window, one side of the vacuum ultraviolet transmission window, which is far away from the reaction chamber, is provided with a vacuum ultraviolet source, and the emission end of the vacuum ultraviolet source faces the vacuum ultraviolet transmission window; the bottom of the reaction chamber is provided with a sample table, and the top surface of the sample table is positioned in the inner cavity of the reaction chamber. The invention combines the vacuum ultraviolet light source with the atomization vapor deposition device to realize the low-temperature chemical vapor deposition without damage or with low damage, and can greatly improve the quality of the deposited film.
Description
Technical Field
The invention belongs to the technical field of vapor deposition, and relates to a vacuum ultraviolet light assisted atomization vapor deposition device and an atomization vapor deposition method.
Background
Chemical vapor deposition (Chemical Vapor Deposition, CVD for short) is a process in which gaseous or vapor species are used to react at a gas-phase or gas-solid interface to form a solid deposit. CN105369211a provides a chemical vapor deposition system, method and apparatus for the system. The system includes a coating chamber, a fluid introduction system, and a means for radiating a heating element. The coating chamber has a closed boundary extending around a coating region and a passage portion positioned in an axial orientation relative to the closed boundary, the coating chamber being in a fixed and horizontal position. The fluid introduction system includes a vacuum pump and a fluid introduction device, the fluid introduction system being arranged and disposed to introduce fluid into the coating chamber for chemical vapor deposition coating of an article in the coating chamber. The means of radiant heating elements are positioned outside the coating chamber and are thermally connected with the closed boundary of the coating chamber to a heating zone within the coating chamber.
CN209522919U provides a chemical vapor deposition furnace comprising: furnace body, feed inlet, discharge gate, air inlet, gas outlet and set up in the inside stirring structure of furnace body. The chemical vapor deposition equipment comprises the chemical vapor deposition furnace, a raw material bin detachably connected with a feed inlet of the chemical vapor deposition furnace, and a finished product bin detachably connected with a discharge outlet of the chemical vapor deposition furnace.
However, common chemical vapor deposition methods are performed at very high temperatures, but the high temperature may damage the substrate or the deposited layer, resulting in defects.
The temperature can be reduced by plasma enhanced CVD, but the plasma can also damage the substrate or deposited layer, resulting in the creation of defects. Achieving low temperature and even room temperature CVD without or with low damage is one of the development directions of the industry.
Therefore, it is desirable to develop a vapor deposition apparatus that achieves low temperature CVD without damage or with low damage.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a vacuum ultraviolet light assisted atomization vapor deposition device and an atomization vapor deposition method. The invention combines the vacuum ultraviolet light source with the atomization vapor deposition device to realize the low-temperature CVD without damage or with low damage, and can greatly improve the quality of the deposited film.
To achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a vacuum ultraviolet light assisted atomization vapor deposition device, which comprises a reaction chamber;
the reaction chamber is provided with a gas inlet and a gas outlet, and is connected with an atomization device through the gas inlet;
the top of the reaction chamber is provided with a vacuum ultraviolet transmission window, one side of the vacuum ultraviolet transmission window, which is far away from the reaction chamber, is provided with a vacuum ultraviolet source, and the emission end of the vacuum ultraviolet source faces the vacuum ultraviolet transmission window; the bottom of the reaction chamber is provided with a sample table, and the top surface of the sample table is positioned in the inner cavity of the reaction chamber.
The invention provides a vacuum ultraviolet light assisted atomization vapor deposition device, which combines a vacuum ultraviolet light source with the atomization vapor deposition device, converts raw materials into fog through the atomization device to be introduced into a reaction chamber, irradiates a substrate arranged on a sample stage with vacuum ultraviolet light to provide energy, enables the raw material fog to react at low temperature, deposits a film on the surface of the substrate, and has small damage probability to the substrate and the deposited film, thereby realizing low-temperature CVD without damage or low damage, even realizing room-temperature CVD, greatly improving the quality of the deposited film, and being green and energy-saving.
Optionally, part or all of the sample stage is disposed within the reaction chamber.
Preferably, the reaction chamber comprises a rectifying section, a reaction section and a discharge section which are sequentially connected, the rectifying section is provided with an airflow converging structure, the discharge section is provided with an airflow diverging structure, the small-size end of the rectifying section is in butt joint with the input end of the reaction section, and the output end of the reaction section is in butt joint with the small-size end of the discharge section.
In the invention, the rectifying section is provided with an airflow converging structure, and can rectify the fog entering the reaction chamber, so that the airflow before the fog flows into the reaction section is more stable, and the uniformity of the airflow field in the subsequent reaction section is improved; the exhaust section of the device has an airflow divergence structure, so that the gas flow at the output end of the reaction section can be prevented from being too fast, the gas flow is prevented from directly striking the inner wall of the output end to form an unstable flow field, the buffer space is increased, the uniformity of the gas flow field in the reaction chamber can be greatly improved, and the quality of a deposited film is further improved.
Preferably, the rectifying section is provided with at least 1 (e.g. 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 etc.) of said gas inlets, and the discharging section is provided with at least 1 (e.g. 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 etc.) of said gas outlets.
Preferably, the structure of the reaction section comprises a straight cylinder structure with two open ends; the bottom of reaction section is provided with the sample platform, the top of reaction section is provided with the vacuum ultraviolet passes through the window.
Preferably, the distance between the bottom surface of the vacuum ultraviolet transmission window and the top surface of the sample stage is 0.5mm-5mm, for example, 0.5mm, 0.7mm, 1mm, 1.5mm, 2mm, 2.5mm, 3mm, 3.5mm, 4mm, 4.5mm or 5mm, etc.
In the invention, when the distance between the bottom surface of the vacuum ultraviolet transmission window and the top surface of the sample stage is controlled to be 0.5mm-5mm, the substrate is placed on the top surface of the sample stage, and a narrow slit can be formed above the substrate, and the narrow slit can enable the air flow above the substrate to be laminar, so that the uniformity of film deposition can be improved.
Preferably, the distance between the emitting end of the vacuum ultraviolet light source and the top surface of the sample stage is 2mm-20mm, for example, 2mm, 4mm, 6mm, 8mm, 10mm, 12mm, 14mm, 16mm, 18mm or 20mm, etc.
Preferably, the rectifying section comprises a first straight barrel section and a tapered section which are in butt joint in sequence, the cross-sectional area of the tapered section gradually decreases along the flow direction of the mist, and the small-size end of the tapered section is in butt joint with the input end of the reaction section.
Preferably, the first barrel section is provided with the at least 1 gas inlet, and the "at least 1" may be, for example, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, etc.
Preferably, the outer side wall of the first straight barrel section is provided with 2 gas inlets, which are respectively marked as a first gas inlet and a second gas inlet, and the first gas inlet and the second gas inlet are oppositely arranged.
In the invention, the first gas inlet and the second gas inlet are oppositely arranged, so that the carrier gas carrying the fog enters the rectifying section in two paths, and in the rectifying section, the two paths of gas flows collide, thereby achieving better rectifying effect.
Preferably, the inclined surface of the tapered section forms an angle of 25 ° -75 ° with the cross section, for example 25 °, 27 °, 30 °, 32 °, 35 °, 37 °, 40 °, 42 °, 45 °, 50 °, 60 °, 65 °, 70 ° or 75 °.
Preferably, the discharge section comprises a divergent section and a second straight section which are in butt joint in sequence, the cross-sectional area of the divergent section is gradually increased along the flow direction of the mist, and the small-size end of the divergent section is in butt joint with the output end of the reaction section.
Preferably, the second straight section is provided with the at least 1 gas outlet, and the "at least 1" may be, for example, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, etc.
Preferably, the inclined plane of the diverging section forms an angle with the cross section of 25 ° -75 °, for example 25 °, 27 °, 30 °, 32 °, 35 °, 37 °, 40 °, 42 °, 45 °, 50 °, 60 °, 65 °, 70 ° or 75 °.
Preferably, the atomization device is provided with a carrier gas inlet and a carrier gas outlet, the carrier gas inlet is communicated with a first carrier gas source, and the carrier gas provided by the first carrier gas source is used for transporting mist generated by the atomization device; the carrier gas outlet communicates with the gas inlet.
Preferably, an air inlet branch is led out from a communicating pipeline of the carrier gas outlet and the air inlet, an air inlet end of the air inlet branch is communicated with a second carrier gas source, and the carrier gas provided by the second carrier gas source can transport the mist generated by the atomizing device together with the carrier gas provided by the first carrier gas source.
Preferably, the first carrier gas source and the second carrier gas source independently comprise any one or a combination of at least two of nitrogen, argon, helium or hydrogen.
It should be noted that "independently" means that the first carrier gas source may select any one or a combination of at least two of nitrogen, argon, helium or hydrogen, and the second carrier gas source may select any one or a combination of at least two of nitrogen, argon, helium or hydrogen, where the carrier gas components are not interfered with each other.
Preferably, the composition of the first carrier gas source is the same as the composition of the second carrier gas source.
Preferably, at least 1 atomizing device is connected to the rectifying section, and the "at least 1" may be, for example, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, or the like. When at least 2 atomizing devices are connected, the at least 2 atomizing devices are arranged in parallel.
Preferably, the atomization device comprises a first atomization chamber, and the first atomization chamber is provided with the carrier gas inlet and the carrier gas outlet; the bottom of first atomizing cavity is provided with first atomizing piece, the part of first atomizing piece is located in the inner chamber of first atomizing cavity. The first atomization chamber can be used for containing raw material liquid, and the first atomization piece is in direct contact with the raw material liquid for atomization.
Preferably, the first atomization piece comprises a first ultrasonic vibrator, and the ultrasonic frequency of the first ultrasonic vibrator is 1MHz-10MHz, and can be 1MHz, 2MHz, 3MHz, 4MHz, 5MHz, 6MHz, 7MHz, 8MHz, 9MHz or 10MHz, for example.
In the invention, the ultrasonic wave emitted by the first ultrasonic vibrator can excite the raw material liquid in the first atomization chamber to form fog, and the fog consists of fine liquid drop particles.
Preferably, the atomization device comprises a second atomization chamber and a medium container, wherein the bottom of the second atomization chamber is positioned in the inner cavity of the medium container, and the second atomization chamber is provided with the carrier gas inlet and the carrier gas outlet; the bottom of the medium container is provided with a second atomizing piece, and a part of the second atomizing piece is positioned in the inner cavity of the medium container.
In the invention, the second atomizing chamber can be used for containing raw material liquid, and the medium container contains a medium, for example, pure water; the second atomization piece is in direct contact with the medium and is not in direct contact with the raw material liquid, so that the corrosion of the raw material liquid to the second atomization piece is avoided.
Preferably, the second atomizing piece comprises a second ultrasonic vibrator, and the ultrasonic frequency of the second ultrasonic vibrator is 1MHz-10MHz, and can be 1MHz, 2MHz, 3MHz, 4MHz, 5MHz, 6MHz, 7MHz, 8MHz, 9MHz or 10MHz, for example.
In the invention, the ultrasonic wave emitted by the second ultrasonic vibrator can be transmitted to the second atomization chamber through a medium in the medium container, wherein the medium is liquid which allows the ultrasonic wave to pass through, for example, pure water, and the ultrasonic wave can excite the raw material liquid in the second atomization chamber to form mist, and the mist consists of fine liquid drop particles.
Preferably, the vacuum ultraviolet light source is arranged coaxially with the sample stage.
Preferably, the wavelength of the vacuum ultraviolet light emitted by the vacuum ultraviolet light source is 10nm-380nm, for example, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 100nm, 120nm, 150nm, 170nm, 200nm, 220nm, 250nm, 300nm, 320nm, 350nm or 380nm, etc. The photon energy is higher than the bond energy of most organic molecules, so that the raw materials in the fog can be decomposed and deposited.
In the invention, the selection of the wavelength of the vacuum ultraviolet light and the selection of the carrier gas source components follow the following principles: the wavelength of the vacuum ultraviolet light is located outside the absorption spectrum of the carrier gas, so that the vacuum ultraviolet light cannot be absorbed by the carrier gas to cause energy attenuation. Illustratively, the first carrier gas source and the second carrier gas source are both nitrogen, the absorption spectrum of nitrogen is 99nm to 145nm, and the vacuum ultraviolet wavelength is selected to be 10nm to 99nm or 145nm to 380nm, specifically 172nm. Also illustratively, the first and second carrier gas sources are argon, which has less absorption of vacuum ultraviolet wavelengths, which may be selected over a greater range.
Preferably, the power of the vacuum ultraviolet light source is 20mW/cm 2 -200mW/cm 2 For example, it may be 20mW/cm 2 、30mW/cm 2 、50mW/cm 2 、70mW/cm 2 、100mW/cm 2 、120mW/cm 2 、150mW/cm 2 、170mW/cm 2 Or 200mW/cm 2 Etc.
Alternatively, the vacuum ultraviolet light source may be an excimer radiation source, and the working medium may be xenon chloride, krypton chloride, or Xe 2 、Kr 2 、Ar 2 The corresponding wavelengths are 308nm, 222nm, 172nm, 146nm and 126nm respectively.
Preferably, the material of the vacuum ultraviolet transmitting window comprises synthetic quartz glass.
Preferably, a temperature control component is arranged in the inner cavity of the sample stage, and the temperature control component comprises a heating component and/or a cooling component. And the temperature of the sample table is used as a set value, and the temperature of the sample table is regulated and controlled through the temperature control component, so that the temperature of the substrate is regulated and controlled.
Optionally, a rotating component is disposed at the bottom of the sample stage, and the rotating component is used for driving the sample stage to rotate, so as to drive the substrate to rotate.
In a second aspect, the present invention provides a method for performing atomized vapor deposition using the vacuum ultraviolet light assisted atomized vapor deposition apparatus according to the first aspect, the method for atomized vapor deposition comprising:
placing a substrate on a sample stage, and placing raw material liquid into an atomization device; and starting an atomization device to enable the raw material liquid to form mist to flow into the reaction chamber, starting a vacuum ultraviolet light source, irradiating vacuum ultraviolet light on the surface of the substrate, and performing atomization vapor deposition.
The material of the substrate is not limited in the invention, and the material includes any one of sapphire, silicon, germanium, silicon carbide, quartz or metal.
The invention is not limited to the components of the raw material liquid, including but not limited to GaCl 3 、AlCl 3 、ZnCl 2 、FeCl 3 、GaBr 3 、AlBr 3 、ZnBr 2 、FeBr 3 At least one of Ga acetoacetate, al acetoacetate, in acetoacetate, fe acetylacetonate, al vinylacetone, ga vinylacetone, tetraethyl orthosilicate (TEOS), and octamethyl cyclotetrasiloxane (OMCTS); thereby forming a metal oxide thin film material including Ga on the substrate 2 O 3 、Al 2 O 3 、ZnO、(Al x Ga 1-x ) 2 O 3 、(Fe x Ga 1-x ) 2 O 3 Or SiO 2 Etc.
Preferably, the temperature of the substrate is 20 ℃ to 400 ℃, for example, 20 ℃, 30 ℃, 40 ℃, 50 ℃, 70 ℃, 100 ℃, 150 ℃, 200 ℃, 250 ℃, 300 ℃, 350 ℃, 400 ℃, or the like can be used.
Preferably, the droplet diameter in the mist is 1 μm to 5 μm, and may be, for example, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, 5 μm or the like.
Preferably, the gas pressure in the reaction chamber is 10kPa to 110kPa, for example, 10kPa, 20kPa, 30kPa, 40kPa, 50kPa, 60kPa, 70kPa, 80kPa, 90kPa, 100kPa, 110kPa, or the like may be used.
The numerical ranges recited herein include not only the above-listed point values, but also any point values between the above-listed numerical ranges that are not listed, and are limited in space and for the sake of brevity, the present invention is not intended to be exhaustive of the specific point values that the stated ranges include.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a vacuum ultraviolet light assisted atomization vapor deposition device, which combines a vacuum ultraviolet light source with the atomization vapor deposition device, converts raw materials into fog through the atomization device to be introduced into a reaction chamber, irradiates a substrate arranged on a sample stage with vacuum ultraviolet light to provide energy, enables the raw material fog to react at low temperature, deposits a film on the surface of the substrate, and has small damage probability to the substrate and the deposited film, thereby realizing low-temperature CVD without damage or low damage, even realizing room-temperature CVD, greatly improving the quality of the deposited film, and being green and energy-saving.
Drawings
FIG. 1 is a schematic diagram of a vacuum ultraviolet light assisted atomization vapor deposition apparatus according to embodiment 1 of the present invention;
fig. 2 is a schematic diagram of a vacuum ultraviolet light assisted atomization vapor deposition apparatus according to embodiment 2 of the present invention;
FIG. 3 is a schematic diagram of a vacuum ultraviolet light assisted atomization vapor deposition apparatus according to embodiment 3 of the present invention;
fig. 4 is a schematic diagram of a vacuum ultraviolet light assisted atomization vapor deposition apparatus according to embodiment 4 of the present invention;
FIG. 5 is a front view of a reaction chamber provided in example 4 of the present invention;
FIG. 6 is a top view of a reaction chamber provided in example 4 of the present invention;
wherein 1-a first atomising chamber; 2-a first atomizer; 3-a carrier gas inlet; 4-a carrier gas outlet; a 5-reaction chamber; 501-rectifying section; 502-a reaction section; 503-an exhaust section; 505-gas inlet; 5051—a first gas inlet; 5052-a second gas inlet; 506-gas outlet; 6-vacuum ultraviolet light source; 7-vacuum ultraviolet transmission window; 8-sample stage; 9-an air inlet branch; 10-an air inlet end; 11-a second atomising chamber; 12-media container.
Detailed Description
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
It should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art in a specific case.
The technical scheme of the invention is further described by the following specific embodiments.
Example 1
The embodiment provides a vacuum ultraviolet light assisted atomization vapor deposition device, as shown in fig. 1, which comprises a reaction chamber 5;
the top of the reaction chamber 5 is provided with a vacuum ultraviolet transmission window 7, the bottom of the reaction chamber 5 is provided with a sample stage 8, the top surface of the sample stage 8 is positioned in the inner cavity of the reaction chamber 5, one side of the vacuum ultraviolet transmission window 7, which is far away from the reaction chamber 5, is provided with a vacuum ultraviolet light source 6, the emitting end of the vacuum ultraviolet light source 6 faces the vacuum ultraviolet transmission window 7, the distance between the emitting end of the vacuum ultraviolet light source 6 and the top surface of the sample stage 8 is 20mm, the vacuum ultraviolet light source 6 is an excimer radiation light source, and the working medium is Xe 2 The wavelength of the emitted vacuum ultraviolet light is 172nm, and the power is 50mW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The top surface of the sample table 8 is used for supporting a substrate, and a temperature control assembly is arranged in an inner cavity of the sample table 8; the vacuum ultraviolet light source 6 and the sample stage 8 are coaxially arranged;
the reaction chamber 5 is provided with 1 gas inlet 505 and 1 gas outlet 506; the gas inlet 505 is connected with an atomization device, the atomization device comprises a first atomization chamber 1, the first atomization chamber 1 is used for containing raw material liquid, a first atomization piece 2 is arranged at the bottom of the first atomization chamber 1, a part of the first atomization piece 2 is positioned in an inner cavity of the first atomization chamber 1, the first atomization piece 2 is an ultrasonic vibrator, the ultrasonic frequency of the ultrasonic vibrator is 1MHz, and ultrasonic waves emitted by the ultrasonic vibrator can excite the raw material liquid to form mist; the outer side wall and the top surface of the first atomization chamber 1 are provided with a carrier gas inlet 3 and a carrier gas outlet 4, the carrier gas inlet 3 is communicated with a first carrier gas source, and the carrier gas outlet 4 is communicated with the gas inlet 505; an air inlet branch 9 is led out from a communicating pipeline of the carrier gas outlet 4 and the gas inlet 505, and an air inlet end 10 of the air inlet branch 9 is communicated with a second carrier gas source; the first carrier gas source and the second carrier gas source are both nitrogen.
Example 2
The embodiment provides a vacuum ultraviolet light assisted atomization vapor deposition device, as shown in fig. 2, which comprises a reaction chamber 5;
the reaction chamber 5 comprises a rectifying section 501, a reaction section 502 and a discharge section 503 which are sequentially connected, wherein the rectifying section 501 is provided with an airflow converging structure, namely the rectifying section 501 comprises a first straight barrel section and a converging section which are sequentially connected, the cross section area of the converging section is gradually reduced along the flow direction of fog, the included angle between the inclined plane of the converging section and the cross section is 25 degrees, and the small-size end of the converging section is connected with the input end of the reaction section 502 in a butt joint mode; the outer side wall of the first straight barrel section is provided with 1 gas inlet 505;
the structure of the reaction section 502 is a straight cylinder structure with two open ends; the top of reaction section 502 is provided with vacuum ultraviolet transmission window 7, the bottom of reaction section 502 is provided with sample platform 8, the top surface of sample platform 8 is located in the inner chamber of reaction section 502, the distance between the bottom surface of vacuum ultraviolet transmission window 7 and the top surface of sample platform 8 is 1mm, one side that vacuum ultraviolet transmission window 7 kept away from reaction section 502 is provided with vacuum ultraviolet light source 6, vacuum ultraviolet light source 6's transmitting end orientation vacuum ultraviolet transmission window 7, just the distance between vacuum ultraviolet light source 6's transmitting end and the top surface of sample platform 8 is 2mm, vacuum ultraviolet light source 6 is excimer radiation light sourceThe working medium is Xe 2 The wavelength of the emitted vacuum ultraviolet light is 172nm, and the power is 50mW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The top surface of the sample table 8 is used for supporting a substrate, and a temperature control assembly is arranged in an inner cavity of the sample table 8; the vacuum ultraviolet light source 6 and the sample stage 8 are coaxially arranged;
the exhaust section 503 has an airflow divergent structure, that is, the exhaust section 503 includes a divergent section and a second straight section that are in butt joint in sequence, the cross-sectional area of the divergent section gradually increases along the flow direction of the mist, the included angle between the inclined plane of the divergent section and the cross-section is 25 °, and the small-sized end of the divergent section is in butt joint with the output end of the reaction section 502; the outer side wall of the second straight barrel section is provided with 1 gas outlet 506;
the rectifying section 501 is connected with an atomization device through the gas inlet 505, the atomization device comprises a first atomization chamber 1, the first atomization chamber 1 is used for containing raw material liquid, a first atomization piece 2 is arranged at the bottom of the first atomization chamber 1, a part of the first atomization piece 2 is positioned in an inner cavity of the first atomization chamber 1, the first atomization piece 2 is an ultrasonic vibrator, the ultrasonic frequency of the ultrasonic vibrator is 1MHz, and ultrasonic waves emitted by the ultrasonic vibrator can excite the raw material liquid to form mist; the outer side wall and the top surface of the first atomization chamber 1 are provided with a carrier gas inlet 3 and a carrier gas outlet 4, the carrier gas inlet 3 is communicated with a first carrier gas source, and the carrier gas outlet 4 is communicated with the gas inlet 505; an air inlet branch 9 is led out from a communicating pipeline of the carrier gas outlet 4 and the gas inlet 505, and an air inlet end 10 of the air inlet branch 9 is communicated with a second carrier gas source; the first carrier gas source and the second carrier gas source are both nitrogen.
Example 3
The embodiment provides a vacuum ultraviolet light assisted atomization vapor deposition device, as shown in fig. 3, which comprises a reaction chamber 5;
the reaction chamber 5 comprises a rectifying section 501, a reaction section 502 and a discharge section 503 which are sequentially connected, wherein the rectifying section 501 is provided with an airflow converging structure, namely the rectifying section 501 comprises a first straight barrel section and a converging section which are sequentially connected, the cross section area of the converging section is gradually reduced along the flow direction of fog, the included angle between the inclined plane of the converging section and the cross section is 35 degrees, and the small-size end of the converging section is connected with the input end of the reaction section 502 in a butt joint mode; the outer side wall of the first straight barrel section is provided with 1 gas inlet 505;
the structure of the reaction section 502 is a straight cylinder structure with two open ends; the top of reaction section 502 is provided with vacuum ultraviolet transmission window 7, the bottom of reaction section 502 is provided with sample platform 8, the top surface of sample platform 8 is located in the inner chamber of reaction section 502, the distance between the bottom surface of vacuum ultraviolet transmission window 7 and the top surface of sample platform 8 is 2.5mm, one side that vacuum ultraviolet transmission window 7 kept away from reaction section 502 is provided with vacuum ultraviolet light source 6, vacuum ultraviolet light source 6's transmitting end orientation vacuum ultraviolet transmission window 7, and the distance between vacuum ultraviolet light source 6's transmitting end and the top surface of sample platform 8 is 16mm, vacuum ultraviolet light source 6 is excimer radiation light source, and its working medium is Ar 2 The emitted vacuum ultraviolet light has a wavelength of 126nm and a power of 100mW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The top surface of the sample table 8 is used for supporting a substrate, and a temperature control assembly is arranged in an inner cavity of the sample table 8; the vacuum ultraviolet light source 6 and the sample stage 8 are coaxially arranged;
the exhaust section 503 has an airflow divergent structure, that is, the exhaust section 503 includes a divergent section and a second straight section that are in butt joint in sequence, the cross-sectional area of the divergent section gradually increases along the flow direction of the mist, the included angle between the inclined plane of the divergent section and the cross-section is 35 °, and the small-sized end of the divergent section is in butt joint with the output end of the reaction section 502; the outer side wall of the second straight barrel section is provided with 1 gas outlet 506;
the rectifying section 501 is connected with an atomization device through the gas inlet 505, the atomization device comprises a second atomization chamber 11 and a medium container 12, the second atomization chamber 11 is used for containing raw material liquid, the medium container 12 is used for containing medium, the medium is pure water, and the bottom of the second atomization chamber 11 is positioned in an inner cavity of the medium container 12; the bottom of the medium container 12 is provided with a second atomization piece, part of the second atomization piece is positioned in the inner cavity of the medium container 12, the second atomization piece is a second ultrasonic vibrator, and the ultrasonic frequency of the second ultrasonic vibrator is 5MHz; the outer side wall and the top surface of the second atomization chamber 11 are provided with a carrier gas inlet 3 and a carrier gas outlet 4, the carrier gas inlet 3 is communicated with a first carrier gas source, and the carrier gas outlet 4 is communicated with the gas inlet 505; an air inlet branch 9 is led out from a communicating pipeline of the carrier gas outlet 4 and the gas inlet 505, and an air inlet end 10 of the air inlet branch 9 is communicated with a second carrier gas source; the first carrier gas source and the second carrier gas source are both argon.
Example 4
The embodiment provides a vacuum ultraviolet light assisted atomization vapor deposition device, as shown in fig. 4, which comprises a reaction chamber 5;
the reaction chamber 5 comprises a rectifying section 501, a reaction section 502 and a discharge section 503 which are sequentially connected, wherein the rectifying section 501 is provided with an airflow converging structure, namely the rectifying section 501 comprises a first straight barrel section and a converging section which are sequentially connected, the cross section area of the converging section is gradually reduced along the flow direction of fog, the included angle between the inclined plane of the converging section and the cross section is 45 degrees, and the small-size end of the converging section is connected with the input end of the reaction section 502 in a butt joint mode; 2 gas inlets are formed in the outer side wall of the first straight barrel section and are respectively marked as a first gas inlet 5051 and a second gas inlet 5052, and the first gas inlet 5051 and the second gas inlet 5052 are oppositely arranged as shown in fig. 5 and 6;
the structure of the reaction section 502 is a straight cylinder structure with two open ends; the top of reaction section 502 is provided with vacuum ultraviolet transmission window 7, the bottom of reaction section 502 is provided with sample platform 8, the top surface of sample platform 8 is located in the inner chamber of reaction section 502, the distance between the bottom surface of vacuum ultraviolet transmission window 7 and the top surface of sample platform 8 is 5mm, one side that vacuum ultraviolet transmission window 7 kept away from reaction section 502 is provided with vacuum ultraviolet light source 6, vacuum ultraviolet light source 6's transmitting end orientation vacuum ultraviolet transmission window 7, the distance between vacuum ultraviolet light source 6's transmitting end and the top surface of sample platform 8 is 20mm, vacuum ultraviolet light source 6 is excimer radiation light source, its worker ' sThe medium is xenon chloride, the wavelength of vacuum ultraviolet light emitted by the xenon chloride is 308nm, and the power is 200mW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the The top surface of the sample table 8 is used for supporting a substrate, and a temperature control assembly is arranged in an inner cavity of the sample table 8; the vacuum ultraviolet light source 6 and the sample stage 8 are coaxially arranged;
the exhaust section 503 has an airflow divergent structure, that is, the exhaust section 503 includes a divergent section and a second straight section that are in butt joint in sequence, the cross-sectional area of the divergent section gradually increases along the flow direction of the mist, the included angle between the inclined plane of the divergent section and the cross-section is 45 °, and the small-sized end of the divergent section is in butt joint with the output end of the reaction section 502; the outer side wall of the second straight barrel section is provided with 1 gas outlet 506;
the rectifying section 501 is connected with an atomization device through the first gas inlet 5051 and the second gas inlet 5052, the atomization device comprises a second atomization chamber 11 and a medium container 12, the second atomization chamber 11 is used for containing raw material liquid, the medium container 12 is used for containing a medium, the medium is pure water, and the bottom of the second atomization chamber 11 is positioned in an inner cavity of the medium container 12; the bottom of the medium container 12 is provided with a second atomization piece, part of the second atomization piece is positioned in the inner cavity of the medium container 12, the second atomization piece is a second ultrasonic vibrator, and the ultrasonic frequency of the second ultrasonic vibrator is 10MHz; the outer side wall and the top surface of the second atomization chamber 11 are provided with a carrier gas inlet 3 and a carrier gas outlet 4, the carrier gas inlet 3 is communicated with a first carrier gas source, the carrier gas outlet 4 is connected with an air inlet pipeline, the output end of the air inlet pipeline is connected with 2 branch pipelines, and the two branch pipelines are respectively communicated with a first gas inlet 5051 and a second gas inlet 5052; an air inlet branch 9 is led out of the air inlet pipeline, and the air inlet end 10 of the air inlet branch 9 is communicated with a second carrier air source; the first carrier gas source and the second carrier gas source are both argon.
Comparative example 1
This comparative example provides an atomized vapor deposition apparatus differing from example 1 in that the vacuum ultraviolet light source and the vacuum ultraviolet light transmission window are omitted, and the rest is exactly the same as example 1.
Application example 1
The application example provides a method for performing atomization vapor deposition by using the vacuum ultraviolet light assisted atomization vapor deposition device described in the embodiment 1, which comprises the following steps:
placing a substrate on a sample stage, and placing a raw material liquid into an atomization device, wherein the raw material liquid is acetoacetic acid Ga; starting an atomization device to form mist of raw material liquid, wherein the diameter of liquid drops in the mist is 5 mu m, carrier gas provided by a first carrier gas source and a second carrier gas source carries the mist to flow into a reaction chamber, and the air pressure in the reaction chamber is controlled at 10kPa; and starting the temperature control assembly, adjusting the temperature of the substrate to 150 ℃, starting a vacuum ultraviolet light source, irradiating vacuum ultraviolet light on the surface of the substrate, and performing atomization vapor deposition.
For vapor deposited Ga 2 O 3 The film is subjected to X-ray diffraction (XRD) rocking curve detection, the XRD rocking curve is a common method for representing the crystal quality, the smaller the half-width is, the less damage and defects in the crystal are, the higher the crystal quality is, and the result of the application example shows that the half-width is 0.47 degrees, and the crystal quality of the film is higher.
Application example 2
The application example provides a method for performing atomization vapor deposition by using the vacuum ultraviolet light assisted atomization vapor deposition device described in the embodiment 2, which comprises the following steps:
placing a substrate on a sample stage, and placing a raw material liquid into an atomization device, wherein the raw material liquid is acetoacetic acid Ga; starting an atomization device to form mist of raw material liquid, wherein the diameter of liquid drops in the mist is 5 mu m, carrier gas provided by a first carrier gas source and a second carrier gas source carries the mist to flow into a reaction chamber, and the air pressure in the reaction chamber is controlled at 10kPa; and starting the temperature control assembly, adjusting the temperature of the substrate to 150 ℃, starting a vacuum ultraviolet light source, irradiating vacuum ultraviolet light on the surface of the substrate, and performing atomization vapor deposition.
For vapor deposited Ga 2 O 3 The film is subjected to X-ray diffraction (XRD) rocking curve detection, and the result shows that the half-width is 0.45 degrees, and the crystal quality of the film is higher.
Application example 3
The application example provides a method for performing atomization vapor deposition by using the vacuum ultraviolet light assisted atomization vapor deposition device described in the embodiment 3, which comprises the following steps:
placing a substrate on a sample stage, and placing a raw material liquid into an atomization device, wherein the raw material liquid is acetoacetic acid Ga; starting an atomization device to form a mist of raw material liquid, wherein the diameter of liquid drops in the mist is 2.5 mu m, and carrier gas provided by a first carrier gas source and a second carrier gas source carries the mist to flow into a reaction chamber, and the air pressure in the reaction chamber is controlled at 50kPa; and starting the temperature control assembly, adjusting the temperature of the substrate to be 200 ℃, starting a vacuum ultraviolet light source, irradiating vacuum ultraviolet light on the surface of the substrate, and performing atomization vapor deposition.
For vapor deposited Ga 2 O 3 XRD rocking curve detection is carried out on the film, and the result shows that the half width is 0.50 degrees, and the crystal quality of the film is higher.
Application example 4
The application example provides a method for performing atomization vapor deposition by using the vacuum ultraviolet light assisted atomization vapor deposition device described in the embodiment 4, which comprises the following steps:
placing a substrate on a sample stage, and placing a raw material liquid into an atomization device, wherein the raw material liquid is acetoacetic acid Ga; starting an atomization device to form mist of raw material liquid, wherein the diameter of liquid drops in the mist is 1 mu m, carrier gas provided by a first carrier gas source and a second carrier gas source carries the mist to flow into a reaction chamber, and the air pressure in the reaction chamber is controlled at 110kPa; and starting the temperature control assembly, adjusting the temperature of the substrate to 400 ℃, starting a vacuum ultraviolet light source, irradiating vacuum ultraviolet light on the surface of the substrate, and performing atomization vapor deposition.
For vapor deposited Ga 2 O 3 XRD rocking curve detection is carried out on the film, and the result shows that the half width is 0.55 degrees, and the crystal quality of the film is higher.
Comparative application example 1
The present comparative application example provides a method of performing atomized vapor deposition using the atomized vapor deposition apparatus described in comparative example 1, comprising:
placing a substrate on a sample stage, and placing a raw material liquid into an atomization device, wherein the raw material liquid is acetoacetic acid Ga; starting an atomization device to form mist of raw material liquid, wherein the diameter of liquid drops in the mist is 5 mu m, carrier gas provided by a first carrier gas source and a second carrier gas source carries the mist to flow into a reaction chamber, and the air pressure in the reaction chamber is controlled at 10kPa; and starting the temperature control assembly, adjusting the temperature of the substrate to 600 ℃, and performing atomization vapor deposition.
For vapor deposited Ga 2 O 3 XRD rocking curve detection is carried out on the film, and the result shows that the half-width is 0.94 degrees, the crystal lattice is damaged by high-temperature deposition, and the crystal quality of the film is poor.
In summary, the vacuum ultraviolet light assisted atomization vapor deposition device provided by the invention combines a vacuum ultraviolet light source with the atomization vapor deposition device, converts raw materials into mist through the atomization device, introduces the mist into a reaction chamber, irradiates a substrate arranged on a sample table with vacuum ultraviolet light to provide energy, enables the raw material mist to react at low temperature, deposits a film on the surface of the substrate, and has small damage probability to the substrate and the deposited film, thereby realizing low-temperature CVD without damage or low damage, even realizing room-temperature CVD, greatly improving the quality of the deposited film, and being green and energy-saving;
meanwhile, the rectifying section is provided with an airflow converging structure, so that fog entering the reaction chamber can be rectified, and the airflow before the fog flows into the reaction section is more stable, so that the uniformity of a gas flow field in a subsequent reaction section is improved; the exhaust section of the device has an airflow divergence structure, so that the gas flow at the output end of the reaction section can be prevented from being too fast, the gas flow is prevented from directly striking the inner wall of the output end to form an unstable flow field, the buffer space is increased, the uniformity of the gas flow field in the reaction chamber can be greatly improved, and the quality of a deposited film is further improved.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (10)
1. The vacuum ultraviolet light assisted atomization vapor deposition device is characterized by comprising a reaction chamber;
the reaction chamber is provided with a gas inlet and a gas outlet, and is connected with an atomization device through the gas inlet;
the top of the reaction chamber is provided with a vacuum ultraviolet transmission window, one side of the vacuum ultraviolet transmission window, which is far away from the reaction chamber, is provided with a vacuum ultraviolet source, and the emission end of the vacuum ultraviolet source faces the vacuum ultraviolet transmission window; the bottom of the reaction chamber is provided with a sample table, and the top surface of the sample table is positioned in the inner cavity of the reaction chamber.
2. The vacuum ultraviolet light assisted atomization vapor deposition device according to claim 1, wherein the reaction chamber comprises a rectifying section, a reaction section and a discharge section which are sequentially connected, the rectifying section is provided with an airflow converging structure, the discharge section is provided with an airflow diverging structure, a small-size end of the rectifying section is abutted to an input end of the reaction section, and an output end of the reaction section is abutted to a small-size end of the discharge section;
the rectifying section is provided with at least 1 gas inlet, and the discharging section is provided with at least 1 gas outlet;
the structure of the reaction section comprises a straight cylinder structure with two open ends; the bottom of the reaction section is provided with the sample table, and the top of the reaction section is provided with the vacuum ultraviolet transmission window;
the distance between the bottom surface of the vacuum ultraviolet transmission window and the top surface of the sample table is 0.5mm-5mm;
the distance between the emitting end of the vacuum ultraviolet light source and the top surface of the sample stage is 2mm-20mm.
3. The vacuum ultraviolet light assisted atomization vapor deposition device according to claim 2, wherein the rectifying section comprises a first barrel section and a tapered section which are sequentially butted, the cross-sectional area of the tapered section is gradually reduced along the flow direction of the mist, and the small-size end of the tapered section is butted with the input end of the reaction section;
the outer side wall of the first straight barrel section is provided with 2 gas inlets which are respectively marked as a first gas inlet and a second gas inlet, and the first gas inlet and the second gas inlet are oppositely arranged;
the inclined plane of the tapered section and the inclined plane of the cross section form an included angle of 25-75 degrees.
4. The vacuum ultraviolet light assisted atomization vapor deposition device according to claim 2, wherein the discharge section comprises a divergent section and a second straight section which are sequentially butted, the cross-sectional area of the divergent section is gradually increased along the flow direction of the mist, and the small-size end of the divergent section is butted with the output end of the reaction section;
the second straight barrel section is provided with at least 1 gas outlet;
the inclined plane of the diverging section and the inclined plane of the cross section form an included angle of 25-75 degrees.
5. The vacuum ultraviolet light assisted atomization vapor deposition apparatus of claim 1 in which the atomization apparatus is provided with a carrier gas inlet and a carrier gas outlet, the carrier gas inlet is connected with a first carrier gas source, and the carrier gas outlet is connected with the gas inlet;
an air inlet branch is led out from a communicating pipeline of the carrier gas outlet and the gas inlet, and the air inlet end of the air inlet branch is communicated with a second carrier gas source;
the first carrier gas source and the second carrier gas source independently comprise any one or a combination of at least two of nitrogen, argon, helium, or hydrogen.
6. The vacuum ultraviolet light assisted mist vapor deposition device according to claim 5, wherein the mist device comprises a first mist chamber, the first mist chamber being provided with the carrier gas inlet and the carrier gas outlet; the bottom of the first atomization chamber is provided with a first atomization piece, and part of the first atomization piece is positioned in the inner cavity of the first atomization chamber;
the first atomization piece comprises a first ultrasonic vibrator, and the ultrasonic frequency of the first ultrasonic vibrator is 1MHz-10MHz.
7. The vacuum ultraviolet light assisted mist vapor deposition device according to claim 5, wherein the mist device comprises a second mist chamber and a medium container, the bottom of the second mist chamber is located in the inner cavity of the medium container, and the carrier gas inlet and the carrier gas outlet are formed in the second mist chamber; the bottom of the medium container is provided with a second atomization piece, and part of the second atomization piece is positioned in the inner cavity of the medium container;
the second atomization piece comprises a second ultrasonic vibrator, and the ultrasonic frequency of the second ultrasonic vibrator is 1MHz-10MHz.
8. The vacuum ultraviolet light assisted atomization vapor deposition apparatus of claim 1 in which the vacuum ultraviolet light source is coaxially disposed with the sample stage;
the wavelength of the vacuum ultraviolet light emitted by the vacuum ultraviolet light source is 10nm-380nm;
the power of the vacuum ultraviolet light source is 20mW/cm 2 -200mW/cm 2 ；
A temperature control component is arranged in the inner cavity of the sample table.
9. A method of aerosol vapor deposition using the vacuum ultraviolet light assisted aerosol vapor deposition apparatus of any of claims 1 to 8, wherein the method of aerosol vapor deposition comprises:
placing a substrate on a sample stage, and placing raw material liquid into an atomization device; and starting an atomization device to enable the raw material liquid to form mist to flow into the reaction chamber, starting a vacuum ultraviolet light source, irradiating vacuum ultraviolet light on the surface of the substrate, and performing atomization vapor deposition.
10. The method of atomizing vapor deposition according to claim 9, wherein the temperature of the substrate is 20 ℃ to 400 ℃;
the diameter of the liquid drops in the fog is 1mm-5mm;
the air pressure in the reaction chamber is 10kPa-110kPa.
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| US6056994A (en) * | 1988-12-27 | 2000-05-02 | Symetrix Corporation | Liquid deposition methods of fabricating layered superlattice materials |
| CN2568672Y (en) * | 2002-09-05 | 2003-08-27 | 西安电子科技大学 | Photochemical gas phase deposition appts. |
| CN102165097A (en) * | 2008-09-24 | 2011-08-24 | 东芝三菱电机产业系统株式会社 | Method for production of zinc oxide (ZnO) film or magnesium zinc oxide (ZnMgO) film, and apparatus for production of zinc oxide film or magnesium zinc oxide film |
| CN116024550A (en) * | 2023-03-06 | 2023-04-28 | 青禾晶元(天津)半导体材料有限公司 | Device system and method for growing oxide film by utilizing mist chemical vapor deposition |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6056994A (en) * | 1988-12-27 | 2000-05-02 | Symetrix Corporation | Liquid deposition methods of fabricating layered superlattice materials |
| CN2568672Y (en) * | 2002-09-05 | 2003-08-27 | 西安电子科技大学 | Photochemical gas phase deposition appts. |
| CN102165097A (en) * | 2008-09-24 | 2011-08-24 | 东芝三菱电机产业系统株式会社 | Method for production of zinc oxide (ZnO) film or magnesium zinc oxide (ZnMgO) film, and apparatus for production of zinc oxide film or magnesium zinc oxide film |
| CN116024550A (en) * | 2023-03-06 | 2023-04-28 | 青禾晶元(天津)半导体材料有限公司 | Device system and method for growing oxide film by utilizing mist chemical vapor deposition |
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