CN116316503A - Bridge arm switch tube gate-source voltage spike adjusting device and implementation method - Google Patents

Bridge arm switch tube gate-source voltage spike adjusting device and implementation method Download PDF

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CN116316503A
CN116316503A CN202310085693.8A CN202310085693A CN116316503A CN 116316503 A CN116316503 A CN 116316503A CN 202310085693 A CN202310085693 A CN 202310085693A CN 116316503 A CN116316503 A CN 116316503A
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voltage
gate
switching tube
source
tube
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CN116316503B (en
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贺远航
张桂东
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Guangdong University of Technology
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00Details of emergency protective circuit arrangements
    • H02H1/0007Details of emergency protective circuit arrangements concerning the detecting means
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H1/00Details of emergency protective circuit arrangements
    • H02H1/0092Details of emergency protective circuit arrangements concerning the data processing means, e.g. expert systems, neural networks
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/10Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
    • H02H7/12Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers
    • H02H7/1213Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers for static converters or rectifiers for DC-DC converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0048Circuits or arrangements for reducing losses
    • H02M1/0054Transistor switching losses
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention discloses a bridge arm switch tube gate-source voltage spike adjusting device and an implementation method. Specifically, the drain and source electrodes of the switching tube are connected with the variable capacitor in parallel in the ringing stage, so that the amplitude of voltage and current ringing is reduced, the period of voltage and current ringing is increased, the purpose of reducing the change rate of drain and source voltage and drain and source current is achieved, the interference of the power circuit on the driving circuit is finally reduced, and the overvoltage and false turn-on problems of the driving circuit are avoided. In a switching process of a bridge arm structure, only one capacitor is connected to change the gate-source voltages of the two switching tubes. Compared with the traditional driving circuit design, the method disclosed by the invention can realize the gate-source voltage adjustment with larger current-voltage stress range, has universality for bridge arm structures, reduces the change rate of voltage and current in the ringing stage, simultaneously takes the rapidity of the switching process into consideration, and avoids generating extra switching loss.

Description

Bridge arm switch tube gate-source voltage spike adjusting device and implementation method
Technical Field
The invention belongs to the field of power electronic driving circuits, and relates to a bridge arm switch tube gate-source voltage spike adjusting device and an implementation method.
Background
The bridge arm structure is a very common structure in the topology of power electronics, and the aim of electric energy conversion is realized through the alternate conduction of upper and lower switching tubes of a single bridge arm. Currently, bridge arm structures exist in Dual Active Bridge (DAB), LLC resonant converters, LCC resonant converters, synchronous buck converters, and synchronous boost converters.
However, there are a number of problems in driving the switching tubes of the bridge arm structure, especially in terms of gate-source voltage spikes. When the converter is in the application background of medium and high power, severe voltage and current abrupt change and oscillation conditions exist in the switching process of the switching tube, and voltage and current oscillation in the power loops are coupled to the driving loop through parasitic capacitance of the switching tube, so that voltage spike is generated in the driving loop, and the driving loop can generate overvoltage and false turn-on problems.
At present, in order to reduce the voltage peak of the switching tube driving circuit of the bridge arm structure, a simpler and more effective method is to change the value of the driving resistor in the driving circuit, and conventionally, the larger driving resistor reduces the switching speed of the switching tube switch. However, this method faces many problems, firstly, the numerical relationship between the peak magnitude of the gate-source voltage and the resistance magnitude is not monotonic; secondly, under the application background of medium and high power, the effect of adjusting the voltage spike by changing the resistance is not obvious, and the method has limitation; finally, conventionally, a trial and error method is generally adopted to select the driving resistor, the workload of the process is large, and the selected resistor is only suitable for a certain range of current-voltage stress. At present, the method of adding the clamping circuit in the driving circuit can partially play a role in limiting voltage spikes, but still faces the problem of narrow application range, and the parasitic inductance of the driving circuit is increased by introducing too many devices, so that the spikes are further increased. The intelligent driving IC is a relatively new driving voltage spike solution, but also faces the problem of narrow regulation range. The capacitor is connected in parallel at the power side to slow down the charge and discharge speed, so that the method of reducing the interference of voltage and current to the driving loop is realized, the reasonable capacitance value is difficult to select, and the switching loss is increased.
Disclosure of Invention
The invention discloses a bridge arm switch tube gate-source voltage spike adjusting device and an implementation method. The voltage spike caused by the transmission of the oscillation to the driving loop is further reduced by connecting a variable capacitor with reasonable capacitance value to the power end of the switching tube in two stages, which reduces the subsequent current-voltage oscillation condition of the switching tube. Traditionally, the parallel capacitance of a switching tube can be regarded as increasing the parasitic junction capacitance of the switching tube, which slows down the switching speed of the switching tube and thus leads to larger switching losses. In the invention, by controlling the on and off of the auxiliary switch in the circuit structure and connecting the capacitor after the switching process is finished, the method can not cause extra switching loss and can effectively limit voltage and current ringing, thereby reducing the influence of power loop ringing on the driving loop. Meanwhile, through modeling analysis of a bridge arm switch switching process, the invention discloses control logic corresponding to the device and a specific implementation method, in the specific implementation process, the value of a voltage peak is obtained through detection of gate-source voltage, and the specific value of the variable capacitor can be calculated through the value. Compared with the traditional method for limiting the gate-source voltage peak of the bridge arm switch tube, the method has better universality and wider application range.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required in the prior art and the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a conventional synchronous boost converter topology;
FIG. 2 is a waveform diagram of the gate-source voltage, drain-source current, drain-source voltage during the switching process of the bridge arm structure switch;
FIG. 3 shows an apparatus for automatically adjusting gate-source voltage of bridge arm structure according to the present invention;
FIG. 4 is a comparison of the waveform after adjustment and the waveform before adjustment;
fig. 5 is a flow chart of a specific implementation method.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Taking a synchronous boost converter as an example, the detailed implementation process of the invention is developed:
FIG. 1 shows the structure of a synchronous boost converter, the above tube Q 1 Shut off while down tube Q 2 Opening is an example. When the upper tube is in the off state completely, the lower tube does not enter the on state, and at the moment, the upper tube enters the diode conduction freewheel phase, the duration of the process is determined by the dead time set by people, but the freewheel process causes larger diode conduction voltage drop and causes loss, so that under the reasonable dead time, the freewheel process can be omitted, and at the moment, the turn-off of the upper tube and the turn-on of the lower tube are in a synchronous state.
Fig. 2 is a waveform of the synchronous boost converter during switching of the upper tube off and the lower tube on. Since the voltage-current variations generated on the drain-source of the switching tube will be coupled to the drive loop through parasitic parameters, voltage spikes are generated in the drive loop, and the specific relationship can be expressed as:
Figure SMS_1
Figure SMS_2
above L G R is parasitic inductance of driving circuit G To drive the resistor, i G To drive current, C rss C is the reverse parasitic capacitance of the switch tube iss Input parasitic capacitance for switching tube, L CS Is a common source inductance. When t=t 0 When the grid source current of the upper tube crosses zero, and the grid source current of the lower tube reaches an inductance current value, the upper tube and the lower tube can be regarded as having completed a switching process, and the ringing stage is about to be entered. Since the upper tube has been completely closed while the lower tube voltage has dropped to 0V and remains unchanged, the relationship between the drain-source current of the upper tube and the voltage, and the drain-source current of the lower tube can be expressed as:
Figure SMS_3
Figure SMS_4
i d,Q2 =I L -i d,Q1
above L loop And R is loop Respectively a loop parasitic inductance and a loop high-frequency oscillating resistor, I L For inductor current, C oss The parasitic capacitance is the output parasitic capacitance of the switching tube, and the gate-source voltage of the upper tube is at the maximum value V ds,max +V out
Upper switch tube Q 1 Since the current at this time is at a small value, the interference of the power loop current to the driving loop through the common source inductance is far smaller than the interference of the power loop voltage to the driving loop through the reverse capacitance, and meanwhile, the voltage drop of the parasitic inductance in the driving loop is far smaller than the voltage drop on the driving resistor, so the driving loop equation of the upper tube can be expressed as:
Figure SMS_5
the equation of the power loop is processed by solving differential equation, and the following steps are obtained:
Figure SMS_6
Figure SMS_7
Figure SMS_8
and carrying the solving result into a driving loop equation to obtain the relationship between the final parasitic parameter and the gate-source voltage.
For down tube, since the ringing phenomenon will not occur when the drain-source voltage drops to 0V, but the drain-source current is larger at this time, the driving loop will be affected by the common-source inductance, at this time:
Figure SMS_9
Figure SMS_10
i d,Q2 =I L -i d,Q1
Figure SMS_11
Figure SMS_12
similarly, the down tube Q can be simplified according to the above formula 2 Drive loop voltage value of (2) and switch tube Q 1 Relation between parasitic parameters.
In the ringing phase, the ringing period is related to the RLC parameter of the loop, if the capacitance value is increased, the ringing period is increased, and the ringing amplitude is reduced, so that it is feasible to change the ringing amplitude by changing the parasitic capacitance of the switching tube in the ringing phase. In the bridge arm structure, two switching tubes can be regarded as entering the switching process at the same time under the reasonable dead time, so that changing the parasitic capacitance of one switching tube can change the gate-source current voltage waveforms of the two switching tubes at the same time, and further, change the gate-source voltage waveforms of the two switching tubes.
Fig. 3 shows a specific implementation apparatus, compared to a bridge arm structure of a synchronous boost converter, a first voltage sensor module, a second voltage sensor module, a third voltage sensor module, a fourth voltage sensor module, a fifth voltage sensor module, a first double-throw switch, a second double-throw switch, a first variable capacitor, a second variable capacitor, a CPU module, a current sensor, a first auxiliary switch, and a second auxiliary switch are added. The specific implementation method is as follows:
s1: the converter works normally, the first voltage sensor module and the second voltage sensor module continuously detect the value of the gate-source voltage and the maximum allowable driving voltage V gs,max And threshold voltage V th A comparison is made.
S2: when the gate-source voltage of the switch tube is detected to exceed V gs,max Or V th When the upper tube is turned off, the over-threshold voltage appears, and when the lower tube is turned on, the maximum allowable driving voltage appears, for example, the CPU adjusts the auxiliary switch and the variable capacitor.
S3: the third voltage sensor module, the fourth voltage sensor module and the fifth voltage sensor module transmit the voltage difference to the CPU module, and when the third voltage sensor module has a peak value, the third voltage sensor module is simultaneously connected with the tube Q 1 Can be regarded as an upper tube Q when the drain-source current of (1) crosses zero 1 The turn-off process is completed, the drain-source voltage of the lower tube is kept to be zero, so that the voltage difference value of the third voltage sensor module, the fourth voltage sensor module and the fifth voltage sensor module is the value that the voltage peak value of the upper tube exceeds the stable voltage stress of the upper tube, and the voltage difference value is recorded as V ds,max And meanwhile, the current sensor transmits the inductance current value to the CPU module.
S4: the CPU controls the first double-throw switch to adjust the switch to the 1 bit, controls the second double-throw switch to adjust the switch to the 4 bit, and adjusts the voltage difference Deltav between the peak value of the gate-source voltage monitored by the first voltage sensor and the second voltage sensor and the reference value gs1 And Deltav gs4 And transmitting to the CPU module.
S5: the functional relation is obtained by the expression between the gate-source voltage and the parasitic parameter of the switch tube, which is deduced by the differential equation of the power loop and the driving loop:
f(Δv gs1 )=ΔC oss,Q11
f(Δv gs4 )=ΔC oss,Q12
wherein DeltaC oss,Q11 Is Deltav gs1 The capacitance of the upper tube is adjusted to be O, namely, the grid source voltage peak of the upper tube is adjusted to be an extra capacitance value required below the threshold voltage; ΔC oss,Q12 Is Deltav gs4 The capacitance level is adjusted to 0, that is, the additional capacitance value required to adjust the gate-source voltage spike of the lower tube below the maximum allowable drive voltage. Actual compensation value deltac 1 Greater than or equal to delta C oss,Q11 And DeltaC oss,Q11
S6: the CPU module adjusts the first variable capacitor, after the adjustment is completed, when the drain-source voltage of the upper tube has a peak value at the turn-off time of the upper tube in the next period, the first auxiliary switch is controlled to be turned on, and after a short delay, the first variable capacitor formally and the upper tube Q 1 Finish parallel connection, in the ringing stage, go up tube Q 1 The total output capacitance value is C oss,Q1 And a variable capacitance value C 1 And (3) summing.
S7: in the ringing phase of the period, the ringing period of the switching tube added with the additional capacitor is prolonged, the ringing amplitude is reduced, and dv is reduced as a whole ds Dt and di d And/dt, thereby reducing the interference of voltage ringing to the upper tube and the interference of current ringing to the lower tube, and avoiding the phenomena of false turn-on and overvoltage.
S8: when the change rate of the gate-source voltage of the upper tube and the lower tube is detected to be close to zero, the CPU controls the first auxiliary switch to be turned off, the upper tube is turned off, the lower tube is turned on in a switch switching period, the CPU controls the first auxiliary switch to be turned on when the drain-source voltage has a peak value, and the first auxiliary switch is turned off after the gate-source voltage is stable.
S9: when the lower tube is in the off process and the upper tube is in the on process, similarly, the CPU adjusts the first double-throw switch to be in the number 2 position, the second double-throw switch to be in the number 3 position, and the CPU module is used for controlling the first double-throw switch to be in the number 3 position according to the Deltav gs2 And Deltav ga3 The capacitance C of the second variable capacitor of the lower tube is set according to the same principle 2 When the drain-source voltage peak occurs in the lower tube, the second auxiliary switch is turned on to increase the Q of the lower tube 2 Further reducing dv ds Dt and di d And/dt, so as to avoid the phenomenon of false opening of the lower tube driving and overvoltage of the upper tube driving.
The waveform diagram after capacitance compensation is shown in fig. 4, and the step flow chart is shown in fig. 5.

Claims (10)

1. The bridge arm switch tube gate source voltage peak regulating device is characterized by further comprising a first voltage sensor module, a second voltage sensor module, a third voltage sensor module, a fourth voltage sensor module, a fifth voltage sensor module, a first auxiliary switch, a second auxiliary switch, a first double-throw switch, a second double-throw switch, a current sensor module, a CPU module, a first variable capacitor and a second variable capacitor besides a basic bridge arm structure.
2. The bridge arm switching tube gate-source voltage spike regulating device of claim 1 wherein the first variable capacitor is connected in parallel with the upper side switching tube through the first auxiliary switch; the second variable capacitor is connected with the lower side switching tube in parallel through a second auxiliary switch; the first voltage sensor module is connected in parallel with the gate source electrode of the upper switching tube and is used for monitoring the voltage peak of the gate source electrode of the upper switching tube; the second voltage sensor module is connected in parallel with the gate source of the lower switching tube and is used for monitoring the voltage peak of the gate source of the lower switching tube; the third voltage sensor module is connected in parallel with the drain and source electrodes of the upper switching tube and samples the drain and source voltages of the upper switching tube; the fourth voltage sensor module is connected in parallel with the drain and source electrodes of the lower switching tube and samples the drain and source voltages of the lower switching tube; the fifth voltage sensor module is connected in parallel with the output end; the first double-throw switch is connected with the input end of the grid source voltage pair CPU module of the upper side switching tube and controls the voltage difference type of the upper side switching tube input CPU module; the second double-throw switch is connected with the input end of the grid source voltage pair CPU module of the lower side switch tube and controls the voltage difference type of the lower side switch tube input CPU module.
3. The implementation method for regulating the gate-source voltage spike of the bridge arm switch tube is characterized by adopting the regulating device as claimed in claims 1-2, and the specific implementation steps comprise:
s1: the voltage sensor samples and monitors the driving voltage and compares the driving voltage with a reference value;
s2: when the drive voltage is monitored to be over-threshold or exceeds the maximum allowable voltage, the CPU module starts to work;
s3: the voltage sensor and the current sensor transmit the voltage and current values of part of the power loop to the CPU module;
s4: the CPU module adjusts the double-throw switch and transmits the difference value between the driving voltage of the upper pipe and the driving voltage of the lower pipe and the reference value to the CPU module;
s5: the CPU module obtains a variable capacitance value according to the driving voltage difference value and the voltage current value of a part of driving loops and the provided formula and equation;
s6: in the next period, when the drain-source voltage of the switching tube generates a peak value, the CPU module controls the corresponding auxiliary switching tube to be conducted so as to realize variable capacitance parallel connection;
s7: the compensated output capacitor of the switching tube can effectively avoid the problem of driving voltage caused by voltage and current ringing of the switching tube;
s8: when the driving voltage is detected to be stable, the CPU module controls the auxiliary switching tube to be turned off;
s9: in the opposite switching period, the CPU module controls the variable capacitance of the other switching tube to adjust, so that the problem of driving voltage is avoided.
4. The method for realizing gate-source voltage spike adjustment of bridge arm switch tube according to claim 3, wherein the adjustment of the gate-source voltage spike is realized by connecting a variable capacitor to the drain-source of the switch tube, increasing the equivalent output capacitance of the switch tube, reducing the change rate of the drain-source voltage and current, and finally reducing the gate-source voltage spike.
5. The method for realizing gate-source voltage spike regulation of bridge arm switching tube according to claim 3, wherein the variable capacitor is connected in parallel with the drain-source electrode of the switching tube through an auxiliary switch, and is connected when the converter enters a ringing stage after the switching process is completed.
6. The method for realizing gate-source voltage spike adjustment of bridge arm switch tube according to claim 3, wherein the adjustment of the size of the variable capacitor is realized by modeling a differential equation in a ringing stage, then simplifying the modeling to obtain the relationship between the gate-source voltage and the parasitic parameter of the switch tube, controlling other parameters to be constants, further obtaining the functional relationship between the output capacitance of the switch tube and the gate-source voltage spike, and quantitatively adjusting the capacitance value of the variable capacitor by the CPU module according to the functional relationship.
7. The method for realizing gate-source voltage spike adjustment of bridge arm switching tubes according to claim 3, wherein the gate-source voltage adjustment of two switching tubes can be realized by controlling the connection of a single variable capacitor in a bridge arm, so that the phenomenon that the switching tubes are turned on by mistake in the turn-off process and the phenomenon that the switching tubes are over-voltage in the turn-on process are avoided.
8. The method for realizing gate-source voltage spike adjustment of bridge arm switch tube according to claim 3, wherein after the gate-source voltage tends to be stable, the CPU module controls the auxiliary switch to be turned off, so as to avoid excessive switching loss caused by overlarge output capacitance in the next switching process.
9. The implementation method for bridge arm switching tube gate-source voltage spike adjustment according to claim 3, wherein in the opposite switching process, the gate-source voltage in the opposite switching process can be controlled by controlling the variable capacitor on the other switching tube to be connected to avoid four gate-source voltage problems in a single period, and when the upper switching tube is in the turn-off process, the connection of the upper variable capacitor is controlled to avoid the false turn-on of the upper switching tube and the overvoltage of the lower switching tube; when the lower switching tube is in the turn-off process, the connection of the lower variable capacitor is controlled to avoid the overvoltage of the upper switching tube and the false turn-on of the lower switching tube.
10. A method for implementing a bridge arm switching tube gate-source voltage spike regulation according to claim 3 wherein for a single switching tube converter the method can be used to control the gate-source voltage spike of a switching process of a single switching tube.
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CN201699598U (en) * 2010-06-25 2011-01-05 朱振民 Switch power adapter
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CN109494969A (en) * 2018-12-10 2019-03-19 华中科技大学 A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube
CN210297542U (en) * 2019-08-20 2020-04-10 国网浙江省电力有限公司电力科学研究院 SiC power device driving circuit capable of inhibiting bridge arm crosstalk
CN113098240A (en) * 2021-03-31 2021-07-09 西北工业大学 Drive circuit of Cascode type GaN power device
WO2022077758A1 (en) * 2020-10-15 2022-04-21 北京交通大学 Gate-source voltage disturbance rejection circuit based on transconductance gain negative feedback mechanism
CN217335073U (en) * 2021-12-31 2022-08-30 珠海润电科技有限公司 Relay control circuit and passive protection device
CN115133918A (en) * 2022-04-29 2022-09-30 绍兴圆方半导体有限公司 Semiconductor switch and system
CN115222026A (en) * 2021-04-19 2022-10-21 梁翔 Hardware circuit of impulse neural network
CN115395814A (en) * 2022-09-19 2022-11-25 东南大学 Method for predicting bridge arm crosstalk peak of current source type inverter of silicon carbide device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201699598U (en) * 2010-06-25 2011-01-05 朱振民 Switch power adapter
CN108270424A (en) * 2018-03-02 2018-07-10 清华大学 Optimization silicon carbide MOSFET opens the open loop driving circuit of waveform
CN109494969A (en) * 2018-12-10 2019-03-19 华中科技大学 A kind of driving circuit of manufacturing silicon carbide semiconductor field-effect tube
CN210297542U (en) * 2019-08-20 2020-04-10 国网浙江省电力有限公司电力科学研究院 SiC power device driving circuit capable of inhibiting bridge arm crosstalk
WO2022077758A1 (en) * 2020-10-15 2022-04-21 北京交通大学 Gate-source voltage disturbance rejection circuit based on transconductance gain negative feedback mechanism
CN113098240A (en) * 2021-03-31 2021-07-09 西北工业大学 Drive circuit of Cascode type GaN power device
CN115222026A (en) * 2021-04-19 2022-10-21 梁翔 Hardware circuit of impulse neural network
CN217335073U (en) * 2021-12-31 2022-08-30 珠海润电科技有限公司 Relay control circuit and passive protection device
CN115133918A (en) * 2022-04-29 2022-09-30 绍兴圆方半导体有限公司 Semiconductor switch and system
CN115395814A (en) * 2022-09-19 2022-11-25 东南大学 Method for predicting bridge arm crosstalk peak of current source type inverter of silicon carbide device

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