CN116314494A - Light emitting diode and preparation method thereof - Google Patents

Light emitting diode and preparation method thereof Download PDF

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CN116314494A
CN116314494A CN202310050708.7A CN202310050708A CN116314494A CN 116314494 A CN116314494 A CN 116314494A CN 202310050708 A CN202310050708 A CN 202310050708A CN 116314494 A CN116314494 A CN 116314494A
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layer
gallium nitride
doping concentration
thickness
emitting diode
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李国强
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Guangzhou Zhongtuo Photoelectric Technology Co ltd
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Guangzhou Zhongtuo Photoelectric Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

The invention discloses a light-emitting diode and a preparation method thereof, wherein the light-emitting diode comprises a silicon substrate, a buffer layer, an unintentional doping layer, a gallium nitride composite layer, a multiple quantum well light-emitting layer, an electron blocking layer and a first gallium nitride layer which are sequentially stacked; the gallium nitride composite layer comprises a second gallium nitride layer with a first doping concentration, an aluminum gallium nitride layer, a third gallium nitride layer with a second doping concentration and a fourth gallium nitride layer with a third doping concentration which are sequentially stacked, wherein the first doping concentration is higher than the third doping concentration, and the third doping concentration is higher than the second doping concentration.

Description

Light emitting diode and preparation method thereof
Technical Field
The invention relates to the field of semiconductor devices, in particular to a light emitting diode and a preparation method thereof.
Background
Silicon is one of the most abundant elements on earth, and silicon electronics is the most mature field of semiconductor industry development. The silicon substrate has the characteristics of high crystallization quality, large size, low price, good heat and electric conduction performance and the like, and attracts scientific researchers and manufacturers to put into the research and the production of the gallium nitride light-emitting diode device with the silicon substrate. In addition, the silicon substrate light-emitting diode has the potential of realizing the silicon-based photoelectronic integration function, and the conductivity of the silicon substrate enables the silicon substrate to manufacture high-quality HEMT devices and the like. However, there is a large lattice mismatch between the silicon substrate and the epitaxial gallium nitride layer, so that the epitaxially grown gallium nitride crystal is poor, and the antistatic property and reverse leakage capability are inferior to those of the conventional sapphire substrate light emitting diode.
Disclosure of Invention
Based on this, in order to improve the antistatic property and reverse leakage capability of the silicon substrate light emitting diode, it is necessary to provide a light emitting diode and a method of manufacturing the same.
The invention provides a light-emitting diode, which comprises a silicon substrate, a buffer layer, an unintentional doping layer, a gallium nitride composite layer, a multiple quantum well light-emitting layer, an electron blocking layer and a first gallium nitride layer which are sequentially stacked;
wherein the gallium nitride composite layer comprises a second gallium nitride layer with a first doping concentration, an aluminum gallium nitride layer, a third gallium nitride layer with a second doping concentration and a fourth gallium nitride layer with a third doping concentration which are sequentially stacked, the first doping concentration is higher than the third doping concentration, the third doping concentration is higher than the second doping concentration,
the second gallium nitride layer, the third gallium nitride layer, and the fourth gallium nitride layer have a first conductivity type, and the electron blocking layer and the first gallium nitride layer have a second conductivity type, the first conductivity type being opposite to the second conductivity type.
In one embodiment, the gallium nitride composite layer satisfies one or more of the following conditions:
(1) The first doping concentration is 8×10 19 /cm 3 ～4×10 19 /cm 3 ；
(2) The second doping concentration is 8×10 16 /cm 3 ～2×10 18 /cm 3 ；
(3) The third doping concentration is 8×10 17 /cm 3 ～2×10 19 /cm 3 ；
(4) The thickness of the second gallium nitride layer is 0.5-2.5 mu m;
(5) The thickness of the aluminum gallium nitride layer is 40 nm-120 nm;
(6) The thickness of the third gallium nitride layer is 80 nm-520 nm;
(7) The thickness of the fourth gallium nitride layer is 5 nm-120 nm.
In one embodiment, the buffer layer satisfies one or more of the following conditions:
(1) The material of the buffer layer is at least one selected from gallium nitride, aluminum gallium nitride, indium aluminum gallium nitride and indium gallium nitride;
(2) The thickness of the buffer layer is 200 nm-1100 nm.
In one embodiment, the unintentionally doped layer satisfies one or more of the following conditions:
(1) The material of the unintentional doping layer is gallium nitride;
(2) The thickness of the unintentionally doped layer is 0.2 μm to 1.2 μm.
In one embodiment, the multiple quantum well light emitting layer comprises n stacked base layers, the base layers comprising stacked barrier layers and potential well layers, the barrier layers being in contact with the gallium nitride composite layer, wherein n is an integer from 3 to 12.
In one embodiment, the multiple quantum well light emitting layer satisfies one or more of the following conditions:
(1) The material of the barrier layer is Al x Ga 1-x N, wherein x is 0to 0.5;
(2) The potential well layer is made of In y Ga 1-y N, wherein y is 0to 0.4;
(3) The thickness of the barrier layer is 2 nm-12 nm;
(4) The thickness of the potential well layer is 1 nm-6 nm.
In one embodiment, the electron blocking layer satisfies one or more of the following conditions:
(1) The material of the electron blocking layer is selected from one or more of gallium nitride, aluminum gallium nitride, indium aluminum gallium nitride and aluminum nitride;
(2) The thickness of the electron blocking layer is 20 nm-90 nm;
(3) Doping concentration 10 of the electron blocking layer 18 /cm 3 ～5×10 19 /cm 3 。
In one embodiment, the first gallium nitride layer satisfies one or more of the following conditions:
(1) The thickness of the first gallium nitride layer is 20 nm-170 nm;
(2) Doping concentration 10 of the first gallium nitride layer 18 /cm 3 ～5×10 20 /cm 3 。
The invention also provides a preparation method of the light-emitting diode, wherein the buffer layer, the unintentional doping layer, the gallium nitride composite layer, the multi-quantum well light-emitting layer, the electron blocking layer and the first gallium nitride layer are sequentially formed on the silicon substrate.
In one embodiment, the above preparation method satisfies one or more of the following conditions:
(1) The buffer layer forming conditions include: the growth temperature is 750-1100 ℃;
(2) The conditions for the formation of the unintentionally doped layer include: the growth temperature is 950-1300 ℃;
(3) The conditions for forming the gallium nitride composite layer comprise: the growth temperature is 800-1200 ℃, and the growth pressure is 30-250 torr;
(4) The conditions for forming the multiple quantum well light-emitting layer include: the growth temperature is 600-1100 ℃;
(5) The conditions for forming the electron blocking layer include: the growth temperature is 800-1200 ℃;
(6) The conditions for forming the first gallium nitride layer include: the growth temperature is 800-1200 ℃.
According to the epitaxial growth gallium nitride crystal in the light-emitting diode structure, the gallium nitride composite layer comprises the second gallium nitride layer with the first doping concentration, the aluminum gallium nitride layer, the third gallium nitride layer with the second doping concentration and the fourth gallium nitride layer with the third doping concentration which are sequentially stacked, and the doping gradient in the gallium nitride layer is limited, so that the crystal quality and the electron migration of gallium nitride in the gallium nitride composite layer can be effectively improved, the leakage channel is reduced, and the antistatic capacity and the reverse leakage capacity of the light-emitting diode are improved.
Drawings
FIG. 1 is a block diagram of a light emitting diode;
reference numerals illustrate: 10: light emitting diode, 100: silicon substrate, 110: buffer layer, 120: unintentional doped layer, 130: gallium nitride composite layer, 131: second gallium nitride layer, 132: aluminum gallium nitride layer, 133: third gallium nitride layer, 134: fourth gallium nitride layer 140: multiple quantum well light emitting layer, 141: barrier layer, 142: potential well layer, 150: electron blocking layer, 160: a first gallium nitride layer.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. In the description of the present invention, the meaning of "several" means at least one, such as one, two, etc., unless specifically defined otherwise.
The words "preferably," "more preferably," and the like in the present invention refer to embodiments of the invention that may provide certain benefits in some instances. However, other embodiments may be preferred under the same or other circumstances. Furthermore, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, nor is it intended to exclude other embodiments from the scope of the invention.
When a range of values is disclosed herein, the range is considered to be continuous and includes both the minimum and maximum values for the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values of the range is included. Further, when multiple range description features or characteristics are provided, the ranges may be combined. In other words, unless otherwise indicated, all ranges disclosed herein are to be understood to include any and all subranges subsumed therein.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Where the terms "comprising," "having," and "including" are used herein, it is intended to cover a non-exclusive inclusion, unless a specifically defined term is used, such as "consisting of … … only," etc., another component may be added.
Unless mentioned to the contrary, singular terms may include plural and are not to be construed as being one in number.
Furthermore, the drawings are not to scale 1:1, and the relative dimensions of the various elements are merely drawn by way of example in the drawings to facilitate an understanding of the invention, but are not necessarily drawn to true scale, the proportions in the drawings not being limiting to the invention. It will be understood that when an element is referred to as being "on," "connected to," "coupled to," or "contacting" another element, it can be directly on, connected or coupled to, or contacting the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly on," "directly connected to," "directly coupled to," or "directly contacting" another element, there are no intervening elements present. Likewise, when a first element is referred to as being "electrically contacted" or "electrically coupled" to a second element, there are electrical paths between the first element and the second element that allow current to flow. The electrical path may include a capacitor, a coupled inductor, and/or other components that allow current to flow even without direct contact between conductive components.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, the present invention provides a light emitting diode 10, which includes a silicon substrate 100, a buffer layer 110, an unintentionally doped layer 120, a gallium nitride composite layer 130, a multiple quantum well light emitting layer 140, an electron blocking layer 150, and a first gallium nitride layer 160, which are sequentially stacked;
wherein the gallium nitride composite layer 130 includes a second gallium nitride layer 131 having a first doping concentration, an aluminum gallium nitride layer 132, a third gallium nitride layer 133 having a second doping concentration, and a fourth gallium nitride layer 134 having a third doping concentration, which are sequentially stacked, the first doping concentration is higher than the third doping concentration, the third doping concentration is higher than the second doping concentration,
the second, third and fourth gallium nitride layers 131, 133 and 134 have a first conductivity type, and the electron blocking layer 150 and the first gallium nitride layer 160 have a second conductivity type, which is opposite to the first conductivity type.
It will be appreciated that the first conductivity type is N-type and the second conductivity type is P-type, and that the first conductivity type is P-type and the second conductivity type is N-type.
In one specific example, the first doping concentration in the gallium nitride composite layer 130 is 8×10 19 /cm 3 ～4×10 19 /cm 3 . Preferably, the first doping concentration is 10 19 /cm 3 ～2×10 19 /cm 3 In particular the first doping concentration may be, but is not limited to 10 19 /cm 3 、1.1×10 19 /cm 3 、1.2×10 19 /cm 3 、1.3×10 19 /cm 3 、1.4×10 19 /cm 3 、1.5×10 19 /cm 3 、1.6×10 19 /cm 3 、1.7×10 19 /cm 3 、1.8×10 19 /cm 3 、1.9×10 19 /cm 3 Or 2X 10 19 /cm 3 。
In a specific example, the thickness of the second gallium nitride layer 131 in the gallium nitride composite layer 130 is 0.5 μm to 2.5 μm. Further, the thickness of the second gallium nitride layer 131 is 1 μm to 2 μm, and the thickness of the second gallium nitride layer 131 may be, but not limited to, 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm or 2 μm.
In one specific example, the second doping concentration in the gallium nitride composite layer 130 is 8×10 16 /cm 3 ～2×10 18 /cm 3 . Preferably, the second doping concentration is 10 17 /cm 3 ～10 18 /cm 3 Specifically, the second doping concentration may be, but is not limited to, 10 17 /cm 3 、2×10 17 /cm 3 、3×10 17 /cm 3 、4×10 17 /cm 3 、5×10 17 /cm 3 、6×10 17 /cm 3 、7×10 17 /cm 3 、8×10 17 /cm 3 、9×10 17 /cm 3 Or 10 18 /cm 3 。
In one specific example, the thickness of the third gallium nitride layer 133 in the gallium nitride composite layer 130 is 80nm to 520nm. Preferably, the thickness of the third gallium nitride layer 133 is 100nm to 500nm, and in particular, the thickness of the third gallium nitride layer 133 may be, but not limited to, 100nm, 200nm, 300nm, 400nm, or 500nm.
In one specific example, the third doping concentration in the gallium nitride composite layer 130 is 8×10 17 /cm 3 ～2×10 19 /cm 3 . Preferably, the third doping concentration is 10 18 /cm 3 ～10 19 /cm 3 Specifically, the third doping concentration may be, but is not limited to, 10 18 /cm 3 、2×10 18 /cm 3 、3×10 18 /cm 3 、4×10 18 /cm 3 、5×10 18 /cm 3 、6×10 18 /cm 3 、7×10 18 /cm 3 、8×10 18 /cm 3 、9×10 18 /cm 3 Or 10 19 /cm 3 。
In one specific example, the thickness of the fourth gallium nitride layer 134 in the gallium nitride composite layer 130 is 5nm to 120nm. In a preferred example, the thickness of the fourth gallium nitride layer 134 is 10nm to 100nm. In particular, the thickness of the fourth gallium nitride layer 134 may be, but is not limited to, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or 100nm.
It is understood that the doping elements in the second gallium nitride layer 131, the third gallium nitride layer 133, and the fourth gallium nitride layer 134 may be, but are not limited to, silicon.
In one specific example, the thickness of the aluminum gallium nitride (AlGaN) layer in the gallium nitride composite layer 130 is 40nm to 120nm. In a preferred example, the thickness of the aluminum gallium nitride (AlGaN) layer is 50nm to 100nm, and in particular, the thickness of the aluminum gallium nitride (AlGaN) layer may be, but not limited to, 50nm, 60nm, 70nm, 80nm, 90nm, or 100nm. It is understood that the molar ratio between Al and Ga in the aluminum gallium nitride layer 132 is 0.1 to 0.3.
In a specific example, the material of the buffer layer 110 is selected from at least one of gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium aluminum gallium nitride (InAlGaN), and indium gallium nitride (InGaN).
In one specific example, the thickness of the buffer layer 110 is 200nm to 1100nm. In a preferred example, the thickness of the buffer layer 110 is 300nm to 1000nm, and in particular, the thickness of the buffer layer 110 may be, but not limited to, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, or 1000nm.
In one specific example, the material of the unintentionally doped layer 120 is gallium nitride.
In one specific example, the thickness of the unintentionally doped layer 120 is 0.2 μm to 1.2 μm. In a preferred example, the thickness of the unintentionally doped layer 120 is 0.5 μm to 1 μm, and in particular, the thickness of the unintentionally doped layer 120 may be, but is not limited to, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, or 1 μm.
In one specific example, the multiple quantum well light emitting layer 140 includes n stacked base layers including a stacked barrier layer 141 and a potential well layer 142, where n is an integer of 3 to 12. Preferably, n is an integer of 5 to 12, and in particular, n may be, but not limited to, 5, 6, 7, 8, 9 or 10. It will be appreciated that the number of barrier layers 141 is the same as the number of potential well layers 142.
In a specific example, the material of the barrier layer 141 in the multiple quantum well light emitting layer 140 is Al x Ga 1-x N, wherein x is 0to 0.5. Preferably, x is 0to 0.4.
In a specific example, the material of the potential well layer 142 In the multiple quantum well light emitting layer 140 is In y Ga 1-y N, wherein y is 0to 0.4. Preferably, y is 0to 0.3.
In one specific example, the thickness of the barrier layer 141 in the multiple quantum well light emitting layer 140 is 2nm to 12nm. Further, the thickness of the barrier layer 141 is 3nm to 10nm, and specifically, the thickness of the barrier layer 141 may be, but not limited to, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, or 10nm.
In one specific example, the thickness of the potential well layer 142 in the multiple quantum well light emitting layer 140 is 1nm to 6nm. Further, the thickness of the potential well layer 142 is 2nm to 4nm, and specifically, the thickness of the potential well layer 142 may be, but not limited to, 2nm, 3nm, or 4nm. It is understood that the thickness herein refers to the thickness of the barrier layer 141 in one base layer or the thickness of the potential well layer 142 in one base layer.
In one specific example, the material of the electron blocking layer 150 is selected from one or more of gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium aluminum gallium nitride (AlInGaN), and aluminum nitride (AlN).
It will be appreciated that the superlattice structure may also be formed between the various materials when the material of the electron blocking layer 150 is a plurality.
In one specific example, the electron blocking layer 150 has a thickness of 20nm to 90nm. In a preferred example, the thickness of the electron blocking layer 150 is 30nm to 80nm, and in particular, the thickness of the electron blocking layer 150 may be, but not limited to, 30nm, 40nm, 50nm, 60nm, 70nm, or 80nm.
In one specific example, electron blocking layer 150 has a doping concentration of 10 18 /cm 3 ～5×10 19 /cm 3 . Further, the electron blocking layer 150 has a doping concentration of 5×10 18 /cm 3 ～3.5×10 19 /cm 3 In particular, the doping concentration of the electron blocking layer 150 may be, but is not limited toIs 5X 10 18 /cm 3 、6×10 18 /cm 3 、7×10 18 /cm 3 、8×10 18 /cm 3 、9×10 18 /cm 3 、10 19 、1.5×10 19 /cm 3 、2.5×10 19 /cm 3 Or 3.5X10 19 /cm 3 . It is understood that the doping element in the electron doped layer may be, but is not limited to, magnesium.
In one specific example, the thickness of the first gallium nitride layer 160 is 20nm to 170nm. Further, the thickness of the first gallium nitride layer 160 is 3 to 150nm, and in particular, the thickness of the first gallium nitride layer 160 may be, but not limited to, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, or 150nm.
In one specific example, the doping concentration of the first gallium nitride layer 160 is 10 18 /cm 3 ～5×10 20 /cm 3 . Further, the doping concentration of the first gallium nitride layer 160 is 5×10 18 /cm 3 ～10 20 /cm 3 Specifically, the doping concentration of the first gallium nitride layer 160 may be, but is not limited to, 5×10 18 /cm 3 、6×10 18 /cm 3 、7×10 18 /cm 3 、8×10 18 /cm 3 、9×10 18 /cm 3 、10 19 /cm 3 、2×10 19 /cm 3 、3×10 19 /cm 3 、4×10 19 /cm 3 、5×10 19 /cm 3 、6×10 19 /cm 3 、7×10 19 /cm 3 、8×10 19 /cm 3 、9×10 19 /cm 3 Or 10 20 /cm 3 . It is understood that the doping element in the first gallium nitride layer 160 may be, but is not limited to, magnesium.
Further, the present invention also provides a method for manufacturing the light emitting diode 10, wherein the buffer layer 110, the unintentionally doped layer 120, the gallium nitride composite layer 130, the multiple quantum well light emitting layer 140, the electron blocking layer 150 and the first gallium nitride layer 160 are sequentially formed on the silicon substrate 100.
It is understood that the method for forming the layers of the light emitting diode 10 may be, but not limited to, chemical vapor deposition.
In one specific example, the conditions for forming the buffer layer 110 include: the growth temperature is 750-1100 ℃. Preferably, the growth temperature of the buffer layer 110 is 800-1050 ℃.
In one specific example, the conditions under which unintentionally doped layer 120 is formed include: the growth temperature is 950-1300 ℃. Preferably, the growth temperature of the unintentionally doped layer 120 is 1050-1200 ℃.
In one specific example, the conditions for forming the gallium nitride composite layer 130 include: the growth temperature is 800-1200 deg.c and the growth pressure is 30-250 torr.
Further, the growth temperature of the second gallium nitride layer 131 is 1100 ℃ to 1100 ℃ and the growth pressure is 80torr to 120torr.
Further, the growth temperature of the third gallium nitride layer 133 is 1000 ℃ to 1100 ℃ and the growth pressure is 80torr to 120torr.
In a preferred example, the growth temperature of the fourth gallium nitride layer 134 is 900-1000 c and the growth pressure is 180-220 torr.
The growth temperature of the AlGaN layer in the GaN composite layer 130 is 900-1000 ℃ and the growth pressure is 30-70 torr.
In one specific example, the conditions for forming the multiple quantum well light emitting layer 140 include: the growth temperature is 600-1100 ℃.
In one specific example, the conditions for forming the electron blocking layer 150 include: the growth temperature is 800-1200 ℃.
In one specific example, the conditions under which the first gallium nitride layer 160 is formed include: the growth temperature is 800-1200 ℃.
The above-mentioned epitaxial growth GaN crystal in the structure of the light emitting diode 10 can effectively improve the crystal quality and electron migration of gallium nitride in the gallium nitride composite layer 130 and reduce the leakage path by providing the gallium nitride composite layer 130 comprising the third gallium nitride layer 133, the aluminum gallium nitride layer 132, the fourth gallium nitride layer 134 and the fourth gallium nitride layer 134 having the second doping concentration and defining the doping gradient in the gallium nitride layer, which are sequentially stacked, thereby improving the antistatic ability and the reverse leakage ability of the light emitting diode 10.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present invention, which facilitate a specific and detailed understanding of the technical solutions of the present invention, but are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. It should be understood that those skilled in the art, based on the technical solutions provided by the present invention, can obtain technical solutions through logical analysis, reasoning or limited experiments, all fall within the protection scope of the appended claims. The scope of the patent is therefore intended to be covered by the appended claims, and the description and drawings may be interpreted as illustrative of the contents of the claims.

Claims (10)

1. The light-emitting diode is characterized by comprising a silicon substrate, a buffer layer, an unintentional doping layer, a gallium nitride composite layer, a multiple quantum well light-emitting layer, an electron blocking layer and a first gallium nitride layer which are sequentially stacked;
wherein the gallium nitride composite layer comprises a second gallium nitride layer with a first doping concentration, an aluminum gallium nitride layer, a third gallium nitride layer with a second doping concentration and a fourth gallium nitride layer with a third doping concentration which are sequentially stacked, the first doping concentration is higher than the third doping concentration, the third doping concentration is higher than the second doping concentration,
the second gallium nitride layer, the third gallium nitride layer, and the fourth gallium nitride layer have a first conductivity type, and the electron blocking layer and the first gallium nitride layer have a second conductivity type, the first conductivity type being opposite to the second conductivity type.
2. The light emitting diode of claim 1, wherein the gallium nitride composite layer satisfies one or more of the following conditions:
(1) The first doping concentration is 8×10 19 /cm 3 ～4×10 19 /cm 3 ；
(2) The second doping concentration is 8×10 16 /cm 3 ～2×10 18 /cm 3 ；
(3) The third doping concentration is 8×10 17 /cm 3 ～2×10 19 /cm 3 ；
(4) The thickness of the second gallium nitride layer is 0.5-2.5 mu m;
(5) The thickness of the aluminum gallium nitride layer is 40 nm-120 nm;
(6) The thickness of the third gallium nitride layer is 80 nm-520 nm;
(7) The thickness of the fourth gallium nitride layer is 5 nm-120 nm.
3. The light emitting diode of claim 1, wherein the buffer layer satisfies one or more of the following conditions:
(1) The material of the buffer layer is at least one selected from gallium nitride, aluminum gallium nitride, indium aluminum gallium nitride and indium gallium nitride;
(2) The thickness of the buffer layer is 200 nm-1100 nm.
4. The light emitting diode of claim 1, wherein the unintentionally doped layer satisfies one or more of the following conditions:
(1) The material of the unintentional doping layer is gallium nitride;
(2) The thickness of the unintentionally doped layer is 0.2 μm to 1.2 μm.
5. The light-emitting diode according to claim 1, wherein the multiple quantum well light-emitting layer comprises an n-layer stacked base layer comprising a stacked barrier layer and a potential well layer, the barrier layer being in contact with the gallium nitride composite layer, wherein n is an integer from 3 to 12.
6. The light emitting diode of claim 5, wherein the multiple quantum well light emitting layer satisfies one or more of the following conditions:
(1) The material of the barrier layer is Al x Ga 1-x N, wherein x is 0to 0.5;
(2) The potential well layer is made of In y Ga 1-y N, wherein y is 0to 0.4;
(3) The thickness of the barrier layer is 2 nm-12 nm;
(4) The thickness of the potential well layer is 1 nm-6 nm.
7. The light emitting diode of claim 1, wherein the electron blocking layer satisfies one or more of the following conditions:
(1) The material of the electron blocking layer is selected from one or more of gallium nitride, aluminum gallium nitride, indium aluminum gallium nitride and aluminum nitride;
(2) The thickness of the electron blocking layer is 20 nm-90 nm;
(3) Doping concentration 10 of the electron blocking layer 18 /cm 3 ～5×10 19 /cm 3 。
8. The light emitting diode of claim 1, wherein the first gallium nitride layer satisfies one or more of the following conditions:
(1) The thickness of the first gallium nitride layer is 20 nm-170 nm;
(2) Doping concentration 10 of the first gallium nitride layer 18 /cm 3 ～5×10 20 /cm 3 。
9. A method of manufacturing a light-emitting diode according to any one of claims 1 to 8, wherein the buffer layer, the unintentionally doped layer, the gallium nitride composite layer, the multiple quantum well light-emitting layer, the electron blocking layer, and the first gallium nitride layer are sequentially formed on the silicon substrate.
10. The method of manufacturing a light emitting diode according to claim 9, wherein one or more of the following conditions are satisfied:
(1) The buffer layer forming conditions include: the growth temperature is 750-1100 ℃;
(2) The conditions for the formation of the unintentionally doped layer include: the growth temperature is 950-1300 ℃;
(3) The conditions for forming the gallium nitride composite layer comprise: the growth temperature is 800-1200 ℃, and the growth pressure is 30-250 torr;
(4) The conditions for forming the multiple quantum well light-emitting layer include: the growth temperature is 600-1100 ℃;
(5) The conditions for forming the electron blocking layer include: the growth temperature is 800-1200 ℃;
(6) The conditions for forming the first gallium nitride layer include: the growth temperature is 800-1200 ℃.
CN202310050708.7A 2023-02-01 2023-02-01 Light emitting diode and preparation method thereof Pending CN116314494A (en)

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