CN116314476A - Preparation method of light-emitting chip and display device - Google Patents
Preparation method of light-emitting chip and display device Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The application provides a preparation method of a light-emitting chip and a display device, comprising the following steps: preparing an epitaxial layer on a growth substrate, and preparing a metal bonding layer on one side of the epitaxial layer; etching the epitaxial layer to form a light-emitting chip, and establishing electrical interconnection between the light-emitting chip and the driving substrate through the metal bonding layer; and removing the growth substrate, preparing an N electrode on the other side of the epitaxial layer, and preparing a quantum dot color conversion layer on the surface of the N electrode. In the method, the quantum dot color conversion layer is prepared on the surface of the N electrode of the light-emitting chip, and a color conversion layer substrate is not required to be additionally manufactured. The problems of the first substrate and the second substrate in the prior art such as adhesion precision, optical crosstalk and the like are avoided, and the cost of the Micro LED display device is reduced because the color conversion layer substrate is not required to be additionally manufactured.
Description
Technical Field
The present disclosure relates to the field of chip technologies, and in particular, to a method for manufacturing a light emitting chip and a display device.
Background
Compared with LCD and OLED, micro-LED has the obvious technical advantages of high image quality, high integration, low power consumption, high reliability, high device integration, new form and the like, and can be applied TO almost all main stream display fields covering TO B end large screen display and TO C end consumer application.
The Micro LED chip contains a color conversion layer, and the process of preparing the color conversion layer in the prior art is shown in fig. 1, and the Micro LED chip consists of a first substrate 01 and a second substrate 02. Wherein the first substrate is made of a thin film transistor TFT substrate 011 and bonded with a light emitting chip 012, which is the main body of light emission of Micro LED display. And the second substrate is composed of glass substrates 021, bank 022 (black, for isolating quantum dots of different colors and preventing optical crosstalk) and quantum dots 023. The technological process is that a bank 022 is prepared on a glass substrate 021, and then quantum dots 023 with different colors are printed. And after the second substrate, namely the color conversion substrate, is prepared, the second substrate is stuck to the first substrate to prepare the Micro LED display device. The problem existing in the prior art is that the first substrate and the second substrate are relatively difficult to paste, the problems of paste precision, optical crosstalk and the like exist, and the cost of the Micro LED display device is relatively high.
Disclosure of Invention
The application provides a preparation method of a light-emitting chip and a display device, which are used for solving the problems that the preparation difficulty of a color conversion layer of an existing Micro LED chip is high, the adhesion precision and the optical crosstalk exist, and the cost is high.
In a first aspect, the present application provides a method for manufacturing a light emitting chip, including:
preparing an epitaxial layer on a growth substrate, and preparing a metal bonding layer on one side of the epitaxial layer;
etching the epitaxial layer to form a light-emitting chip, and establishing electrical interconnection between the light-emitting chip and the driving substrate through the metal bonding layer;
and removing the growth substrate, preparing an N electrode on the other side of the epitaxial layer, and preparing a quantum dot color conversion layer on the surface of the N electrode.
Further, the preparing an epitaxial layer on the growth substrate, preparing a metal bonding layer on one side of the epitaxial layer, includes:
sequentially preparing a buffer layer, an electron transport layer, a light emitting layer and a charge transport layer on a growth substrate;
and preparing a metal bonding layer on the surface of the charge transport layer.
Further, preparing an N electrode on the other side of the epitaxial layer, comprising:
and preparing an N electrode on the surface of the electron transport layer.
Further, preparing a quantum dot color conversion layer on the surface of the N electrode, including:
and preparing a quantum dot color conversion layer on the surface of the N electrode by using an electrospray printing method or an ink-jet printing method.
Further, etching the epitaxial layer to form a light emitting chip includes:
and etching the light-emitting chip on the epitaxial layer by using an inductive coupling plasma etching method.
Further, the size of the N electrode is matched with the quantum dot color conversion layer.
Further, the thickness of the N electrode is 200-1000 nanometers, and the thickness of the quantum dot color conversion layer is 1-20 micrometers.
Further, in the buffer layer, the electron transport layer, the light emitting layer, and the charge transport layer, the thickness of each layer is 10 nm to 1000 nm.
In a second aspect, the present application provides a display device, including a blue vertical chip including a green quantum dot color conversion layer, a blue vertical chip including a red quantum dot color conversion layer, and a blue vertical chip not including a color conversion layer, which are obtained by any of the above preparation methods.
Further, the display device further includes: encapsulation layers and glass prepared at the quantum dot color conversion layers.
The application provides a preparation method of a light-emitting chip and a display device, comprising the following steps:
preparing an epitaxial layer on a growth substrate, and preparing a metal bonding layer on one side of the epitaxial layer;
etching the epitaxial layer to form a light-emitting chip, and establishing electrical interconnection between the light-emitting chip and the driving substrate through the metal bonding layer;
and removing the growth substrate, preparing an N electrode on the other side of the epitaxial layer, and preparing a quantum dot color conversion layer on the surface of the N electrode.
The technical scheme has the following advantages or beneficial effects:
in this application, preparation epitaxial layer and metal bonding layer on growth base plate, with epitaxial layer sculpture luminescence chip, luminescence chip passes through metal bonding layer and establishes electrical interconnection with drive base plate, prepares the N electrode at the opposite side of epitaxial layer, prepares the quantum dot color conversion layer at the surface of N electrode, and this application need not to make color conversion layer base plate in addition. The problems of high adhesion technology difficulty, adhesion precision, optical crosstalk and the like of the first substrate and the second substrate in the prior art are avoided, and the cost of the Micro LED display device is reduced because the color conversion layer substrate is not required to be additionally manufactured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a process for preparing a color conversion layer according to the prior art;
fig. 2 is a schematic diagram of a process for manufacturing a light emitting chip provided in the present application;
fig. 3 is a schematic structural diagram of a Micro LED chip provided in the present application;
fig. 4 is a schematic structural diagram of another Micro LED chip provided in the present application;
fig. 5 is a schematic structural diagram of a display device provided in the present application;
fig. 6 is a schematic circuit diagram of a display device provided in the present application;
fig. 7 is a schematic structural diagram of an AM-driven full-color Micro LED display device provided in the present application;
fig. 8 is a schematic structural diagram of another display device provided in the present application.
Detailed Description
The present invention will be described in further detail below with reference to the attached drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the problems of high difficulty and high cost of the conventional Micro LED chip color conversion layer, the embodiment of the application provides a preparation method of a light emitting chip and a display device.
For purposes of clarity and implementation of the present application, the following description will make clear and complete descriptions of exemplary implementations of the present application with reference to the accompanying drawings in which exemplary implementations of the present application are illustrated, it being apparent that the exemplary implementations described are only some, but not all, of the examples of the present application.
It should be noted that the brief description of the terms in the present application is only for convenience in understanding the embodiments described below, and is not intended to limit the embodiments of the present application. Unless otherwise indicated, these terms should be construed in their ordinary and customary meaning.
The terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a product or apparatus that comprises a list of elements is not necessarily limited to all elements explicitly listed, but may include other elements not expressly listed or inherent to such product or apparatus.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
The foregoing description, for purposes of explanation, has been presented in conjunction with specific embodiments. However, the illustrative discussions above are not intended to be exhaustive or to limit the embodiments to the precise forms disclosed above. Many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles and the practical application, to thereby enable others skilled in the art to best utilize the embodiments and various embodiments with various modifications as are suited to the particular use contemplated.
In the technical field of display, micro LED technology refers to an integrated high-density Micro-sized LED array on a chip, which can realize independent addressing and independent driving luminescence of each pixel and reduce the distance between pixel points from millimeter level to micrometer level. The Micro LED has the advantages of low power consumption, long service life, high stability, self-luminescence without a backlight source, energy conservation, high integration and the like, can be applied to almost all main stream display fields, and is considered to be an ideal form of future display technology.
Compared with LCD and OLED, the Micro-LED has the obvious technical advantages of high image quality, high integration, low power consumption, high reliability, high device integration, new form and the like, can be applied TO almost all main stream display fields covering TO B end large screen display and TO C end consumer application, can create more innovative application scenes filling imagination space by depending on the Micro-LED display technology, is considered as the next generation display technology with the most development potential in the Micro-LED industry, and is also an important break-over opening conforming TO the wind gap of the 'everything display' industry. However, the current technology of Micro-LEDs is still not mature, which results in Micro LED products at significantly higher costs than traditional display products (LCD, OLED). The cost of the chip in the Micro LED product is more than 50% of the total cost, and if the cost of the chip can be reduced, the cost of the Micro LED product can be greatly reduced. And the vertical chip can be below 10 microns, and the smaller the chip size, the more chips are produced by one sapphire substrate, and the lower the corresponding chip cost is. However, the light efficiency of the chip decreases with decreasing chip size, especially for red light chips less than 1%. However, if the blue light chip+color conversion technology is used, the vertical chip size is too small (below 10 μm), which results in difficulty in preparing the color conversion layer, and difficulty in aligning the color conversion layer with the chip. Therefore, how to find a color conversion technology suitable for Micro vertical chips is a key to reduce the cost of Micro LEDs.
Based on the current situation of industrial difficulties, the application provides a preparation method of a light-emitting chip and a display device. The application introduces ITO (indium tin oxide) electrodes in the vertical chip and prepares a quantum dot color conversion layer on the ITO. The method solves the problems of large difficulty in preparing the color conversion layer and low light efficiency of the red light vertical chip of the Micro-size vertical chip (below 10 microns) in the traditional Micro LED display device, avoids using the color conversion substrate, and can obviously reduce the cost of Micro LED products.
In the actual use process, the quantum dot color conversion layer is prepared on the surface of the N electrode of the Micro LED chip, and a color conversion layer substrate is not required to be additionally manufactured. The problems of high adhesion technology difficulty, adhesion precision, optical crosstalk and the like of the first substrate and the second substrate in the prior art are avoided, and the cost of the Micro LED display device is reduced because the color conversion layer substrate is not required to be additionally manufactured.
Fig. 2 is a schematic diagram of a process for manufacturing a light emitting chip according to some embodiments, where the process includes the following steps:
s101: and preparing an epitaxial layer on the growth substrate, and preparing a metal bonding layer on one side of the epitaxial layer.
S102: and etching the epitaxial layer to form a light-emitting chip, and establishing electrical interconnection between the light-emitting chip and the driving substrate through the metal bonding layer.
S103: and removing the growth substrate, preparing an N electrode on the other side of the epitaxial layer, and preparing a quantum dot color conversion layer on the surface of the N electrode.
The growth substrate may be a sapphire substrate or a silicon base substrate, on which an epitaxial layer is prepared. The epitaxial layer comprises a buffer layer, an electron transport layer, a light emitting layer and a charge transport layer. The preparation of the epitaxial layer on the growth substrate specifically comprises the steps of sequentially preparing a buffer layer, an electron transport layer, a light-emitting layer and a charge transport layer on the growth substrate. Preparing a metal bonding layer on one side of the epitaxial layer, specifically comprising preparing a metal bonding layer on the surface of the charge transport layer.
Etching the epitaxial layer to form a light-emitting chip, and establishing electrical interconnection between the light-emitting chip and the driving substrate through the metal bonding layer. Specifically, the light emitting chip is etched in the epitaxial layer by using an inductively coupled plasma etching method. And removing the growth substrate, and preparing an N electrode on the other side of the epitaxial layer. Specifically, an N electrode is prepared on the surface of the electron transport layer.
And preparing a quantum dot color conversion layer on the surface of the N electrode. Specifically, a quantum dot color conversion layer is prepared on the surface of the N electrode by using an electronic spray printing method or an ink jet printing method. The size of the N electrode is matched with the quantum dot color conversion layer. Preferably, the size of the N electrode is the same as the quantum dot color conversion layer.
The light emitting chip in the application comprises a Micro light emitting diode Micro LED chip. The thickness of the prepared N electrode is 200-1000 nanometers, and the thickness of the quantum dot color conversion layer is 1-20 micrometers. The thickness of each layer among the buffer layer, the electron transport layer, the light emitting layer and the charge transport layer is 10 nanometers to 1000 nanometers.
Fig. 3 shows a schematic structural diagram of a light emitting chip (Micro light emitting diode Micro LED chip) according to some embodiments, where, as shown in fig. 3, the light emitting chip sequentially includes:
a P electrode 11, a bonding layer 12, a charge transport layer 13, a light emitting layer 14, an electron transport layer 15, and an N electrode 16; the P electrode, the bonding layer, the charge transport layer, the luminescent layer, the electron transport layer and the N electrode are connected in a layer-by-layer deposition manner; the surface of the N electrode 16 is provided with a quantum dot color conversion layer 17.
As shown in fig. 3, the Micro LED chip includes a vertical chip including, in order from bottom to top, a P electrode 11, a bonding layer 12, a charge transport layer 13, a light emitting layer 14, an electron transport layer 15, and an N electrode 16. Wherein the bonding layer 12 comprises a silicon substrate 121 and a bonding material 122. The P electrode, the bonding layer, the charge transport layer, the luminescent layer, the electron transport layer and the N electrode are connected by layer-by-layer deposition. Wherein the P electrode, the bonding layer, the charge transport layer, the light emitting layer, the electron transport layer and the N electrode can be layer by layer deposited and connected using MOCVD technology. The silicon Substrate 121 is denoted as Si-Substrate and the Bonding material 122 is denoted as Bonding metal. The charge transport layer 13 includes: a P-type GaN material; the charge transport layer 13 may be obtained by P-type doping GaN material. The electron transport layer 15 includes: an N-type GaN material. The electron transport layer 15 may be obtained by N-type doping GaN material. GaN materials such as gallium nitride and the like. The P-type GaN material is denoted as P-GaN and the N-type GaN material is denoted as N-GaN. The light emitting layer 14 includes quantum wells. The quantum wells are denoted as MQWs. The light emitting layer 14 may be formed by vapor deposition process using a multi-quantum well layer. The bonding layer may be fabricated by uniformly dispersing the conductive particles in the matrix using currently well-established fabrication techniques. Preferably, the conductive material may be conductive particles. In a natural state, the conductive particles uniformly dispersed in the matrix do not contact each other, and a conductive path cannot be formed. Therefore, the bonding layer exhibits insulating properties in a natural state.
In this application, the N electrode 16 includes: indium tin oxide, ITO, electrodes. Since the ITO electrode is transparent, this does not hinder the light extraction of the vertical chip nor the light excitation of the quantum dots on the ITO electrode by the vertical chip.
In this application, micro LED chip includes: blue light vertical chip. To realize that the pixel point contains three primary color components. The quantum dot color conversion layer includes: a green quantum dot color conversion layer or a red quantum dot color conversion layer. Wherein, the quantum dot color conversion layer can be prepared on the surface of the N electrode by using an electrospray printing method or an ink-jet printing method.
The left side of fig. 4 is a schematic diagram of a Micro LED chip structure including a Green quantum dot color conversion layer 21, which is denoted as QD-Green, and the right side of fig. 4 is a schematic diagram of a Micro LED chip structure including a Red quantum dot color conversion layer 22, which is denoted as QD-Red.
In the application, the quantum dot color conversion layer is prepared on the surface of the N electrode of the Micro LED chip, and a color conversion layer substrate is not required to be additionally manufactured. The problems of high adhesion technology difficulty, adhesion precision, optical crosstalk and the like of the first substrate and the second substrate in the prior art are avoided, and the cost of the Micro LED display device is reduced because the color conversion layer substrate is not required to be additionally manufactured.
Fig. 5 is a schematic structural diagram of a display device according to some embodiments, where the display device includes a blue vertical chip including a green quantum dot color conversion layer, a blue vertical chip including a red quantum dot color conversion layer, and a blue vertical chip not including a color conversion layer. Blue light is directly emitted by the blue light vertical chip (without a color conversion layer); the blue light vertical chip emits blue light to excite green quantum dots in the green quantum dot color conversion layer, and the green quantum dots absorb the blue light and emit green light; the blue light vertical chip emits blue light to excite red quantum dots in the red quantum dot color conversion layer, and the red quantum dots absorb the blue light and emit red light. The presence of the blue vertical chip without the color conversion layer causes the pixel to contain a blue component, the presence of the blue vertical chip with the green quantum dot color conversion layer causes the pixel to contain a green component, and the presence of the blue vertical chip with the red quantum dot color conversion layer causes the pixel to contain a red component.
In the present application, the display device may be a vertical chip display device driven in an active address driving mode AM. As shown in fig. 5, the display device includes: a thin film transistor TFT substrate 31, the TFT substrate 31 having a Micro LED chip 32 bonded thereto, a buffer layer 33 and an ITO electrode layer 34 deposited thereon, and an encapsulation layer 36 and glass 37 prepared at a quantum dot color conversion layer 35 on the ITO electrode layer 34. In the application, firstly, the manufactured blue light vertical chip is bonded to the TFT substrate, then a buffer layer is deposited, the buffer layer can be made of materials such as silicon oxide or silicon nitride, and finally an ITO electrode layer is deposited.
The TFT substrate is located at the bottom of the display device and is usually sized to fit the overall size of the display device, with the TFT substrate being slightly smaller than the display device. The TFT substrate may have a rectangular or square shape, which is the same as the overall shape of the display device. When the display device is a special-shaped display device, the shape of the TFT substrate may be adaptively set to other shapes, which is not limited herein. In some embodiments, the TFT substrate may also be formed by splicing a plurality of TFT substrate units. The size of the spliced TFT substrate is adapted to the overall size of the display device, and the size of the spliced TFT substrate is slightly smaller than the size of the display device, and the overall shape of the spliced TFT substrate may be rectangular, square or abnormal, which is not limited herein. The TFT substrate may be fabricated using a currently mature thin film process, and the TFT substrate may be fabricated as an active drive substrate. The TFT substrate is used to provide a driving signal. Micro LED chips are located on the surface of the TFT substrate and distributed in an array. In the application, when the size of the Micro LED chip is reduced to the pixel level, the Micro LED can be directly used as a light-emitting unit for image display.
The TFT in the present application is exemplified by a circuit structure of 2T1C, but is not limited thereto, and may be 7T1C or other circuit designs. Fig. 6 is a circuit schematic diagram of a display device. The present application uses a circuit design of 2T1C as an example to drive the vertical chip in the display device to emit light, but is not limited to this structure. 2T1C is one of the TFT driving circuits: grid V sel Applying a voltage to turn on the T1 circuit, V data The voltage of (C) can be applied to the gate of T2 through T1 when V data After the applied voltage of (2) reaches the conduction condition of T2, T2 is conducted. V (V) dd The vertical chip can emit light by applying voltage to the vertical chip through T2 and passing current through the vertical chip. The quantum dot color conversion layer was continuously prepared on the ITO electrode of the vertical chip, and the AM-driven full-color Micro LED display device formed therefrom was as shown in fig. 7. Upon completion of the color conversion layer, the encapsulation layer and glass continue to be prepared in this application as a protection for the display device, as shown in fig. 8. In fig. 7 and 8, the display device includes Glass 41, gi buffer layer 42, active semiconductor layer 43, source 44, drain 45, g gate 46, passivation barrier layer 47, vertical chip 48, quantum dot color conversion layer 49, and encapsulation layer 50. In FIG. 8, the encapsulation layer is located on the side of the micro LED chip facing away from the TFT substrate, and has a transparency of greater than 95%, and typically covers the entire micro LED chip surface, which is sized and shaped to match the size and shape of the TFT substrateThe shape is adapted. The encapsulation layer may be generally made of an inorganic insulating material that insulates water and oxygen, and may be alternatively made of an organic layer and an inorganic layer when applied to a flexible display device, which is not limited herein. The packaging layer is used for packaging and protecting the micron light-emitting diode chip, and prolonging the service life of the micron light-emitting diode chip, so that the stability of the display device is improved.
The display device may be a display device such as a display, a television, or a mobile terminal device such as a mobile phone, a tablet computer, an electronic album, and the like, which is not limited herein.
According to a first inventive concept, there is provided a method of manufacturing a light emitting chip, comprising:
preparing an epitaxial layer on a growth substrate, and preparing a metal bonding layer on one side of the epitaxial layer;
etching the epitaxial layer to form a light-emitting chip, and establishing electrical interconnection between the light-emitting chip and the driving substrate through the metal bonding layer;
and removing the growth substrate, preparing an N electrode on the other side of the epitaxial layer, and preparing a quantum dot color conversion layer on the surface of the N electrode.
The N electrode comprises an indium tin oxide, ITO, electrode. The bonding layer includes a silicon substrate and a bonding material. The charge transport layer comprises a P-type GaN material; the electron transport layer includes an N-type GaN material. The light emitting layer includes a quantum well. The light emitting chip includes: blue light vertical chip. The quantum dot color conversion layer includes: a green quantum dot color conversion layer or a red quantum dot color conversion layer. In the method, the quantum dot color conversion layer is prepared on the surface of the N electrode of the light-emitting chip, and a color conversion layer substrate is not required to be additionally manufactured. The problems of high adhesion technology difficulty, adhesion precision, optical crosstalk and the like of the first substrate and the second substrate in the prior art are avoided, and the cost of the Micro LED display device is reduced because the color conversion layer substrate is not required to be additionally manufactured.
According to a second inventive concept, a display device includes: a blue vertical chip including a green quantum dot color conversion layer, a blue vertical chip including a red quantum dot color conversion layer, and a blue vertical chip not including a color conversion layer. The display device further includes: encapsulation layers and glass prepared at the quantum dot color conversion layers. And a packaging layer and glass are prepared at the quantum dot color conversion layer on the ITO electrode layer. One pixel unit includes three sub-pixels emitting red light, green light, and blue light, respectively. In an embodiment, a pixel unit includes a blue vertical chip not including a color conversion layer, a blue vertical chip including a green quantum dot color conversion layer, and a blue vertical chip including a red quantum dot color conversion layer, so as to realize full-color display. On completion of the color conversion layer, the encapsulation layer and glass continue to be prepared in this application as protection for the display device.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. A method of manufacturing a light emitting chip, comprising:
preparing an epitaxial layer on a growth substrate, and preparing a metal bonding layer on one side of the epitaxial layer;
etching the epitaxial layer to form a light-emitting chip, and establishing electrical interconnection between the light-emitting chip and the driving substrate through the metal bonding layer;
and removing the growth substrate, preparing an N electrode on the other side of the epitaxial layer, and preparing a quantum dot color conversion layer on the surface of the N electrode.
2. The method of claim 1, wherein preparing an epitaxial layer on a growth substrate, preparing a metal bonding layer on one side of the epitaxial layer, comprises:
sequentially preparing a buffer layer, an electron transport layer, a light emitting layer and a charge transport layer on a growth substrate;
and preparing a metal bonding layer on the surface of the charge transport layer.
3. The method of claim 1, wherein fabricating an N electrode on the other side of the epitaxial layer comprises:
and preparing an N electrode on the surface of the electron transport layer.
4. The method of claim 1, wherein preparing a quantum dot color conversion layer on the surface of the N electrode comprises:
and preparing a quantum dot color conversion layer on the surface of the N electrode by using an electrospray printing method or an ink-jet printing method.
5. The method of claim 1, wherein etching the epitaxial layer to light-emitting chips comprises:
and etching the light-emitting chip on the epitaxial layer by using an inductive coupling plasma etching method.
6. The method of claim 1, wherein the N-electrode is sized to match the quantum dot color conversion layer.
7. The method of claim 1, wherein the N-electrode has a thickness of 200 nm to 1000 nm and the quantum dot color conversion layer has a thickness of 1 micron to 20 microns.
8. The method of claim 2, wherein each of the buffer layer, the electron transport layer, the light emitting layer, and the charge transport layer has a thickness of 10 nm to 1000 nm.
9. A display device comprising a blue vertical chip comprising a green quantum dot color conversion layer, a blue vertical chip comprising a red quantum dot color conversion layer, and a blue vertical chip not comprising a color conversion layer, which are obtained by the method according to any one of claims 1 to 9.
10. The display device according to claim 9, wherein the display device further comprises: encapsulation layers and glass prepared at the quantum dot color conversion layers.
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| CN202111572161.4A CN116314476A (en) | 2021-12-21 | 2021-12-21 | Preparation method of light-emitting chip and display device |
| PCT/CN2022/123086 WO2023066013A1 (en) | 2021-10-19 | 2022-09-30 | Display device |
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| CN202111572161.4A CN116314476A (en) | 2021-12-21 | 2021-12-21 | Preparation method of light-emitting chip and display device |
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