CN116314423A - Bipolar composite single photon avalanche photodiode device and manufacturing method thereof - Google Patents
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Abstract
The invention discloses a bipolar composite single photon avalanche photodiode device, which comprises a substrate; an annular DN-Well region and a circular DN-Well region are arranged on the substrate; the annular DN-Well region is provided with first to third annular N-Well regions; a first annular N+ injection region is arranged in the first annular N-Well region, a first annular P+ injection region is arranged in the second annular N-Well region, and a second annular N+ injection region is arranged in the third annular N-Well region; the surface of the annular DN-Well region is provided with a first annular polysilicon gate and a second annular polysilicon gate, and the circular DN-Well region is provided with a third annular N+ injection region and a circular P-Well region; and a second annular P+ injection region and a circular N+ injection region are arranged in the circular P-Well region. The invention realizes the combination of the single photon avalanche photodiode and the triode, and greatly increases the photocurrent gain of the device.
Description
Technical Field
The invention relates to the field of photoelectric detection devices, in particular to a bipolar composite single photon avalanche photodiode device and a manufacturing method thereof.
Background
The single photon detection technology is widely applied to the technical fields of laser ranging, medical diagnosis, fluorescence temperature measurement and the like due to the characteristics of high gain and high sensitivity. The technical scheme capable of realizing single photon detection mainly comprises a photomultiplier tube, a charge coupled device, an Avalanche Photodiode (APD) and the like. The single photon avalanche photodiode (SPAD) is an APD device working in a Geiger mode, converts photons into current through an avalanche multiplication effect, has the advantages of high gain, low noise, large-scale integration and the like, and becomes the best choice of a visible light wave band single photon detection technology.
In a single photon detection system using a single photon avalanche photodiode, parameters such as photocurrent, photon detection probability, dark count rate and the like are key factors for measuring the performance of the device. The structure of a conventional single photon avalanche photodiode is shown in fig. 1, where a heavily doped p+ region and a lightly doped N-Well region constitute the avalanche multiplication region of the device. For the traditional single photon avalanche photodiode, to improve the photocurrent and photon detection probability of the device, the area of the device needs to be enlarged. However, this approach inevitably increases the dark current and dark count rate of the device while increasing the photon detection probability, and a larger layout area requires higher manufacturing costs. Therefore, it is important to design a single photon avalanche photodiode with high photocurrent gain, low dark count rate and high sensitivity.
Disclosure of Invention
In order to solve the technical problems, the invention provides a bipolar composite single photon avalanche photodiode device with simple structure, high photocurrent gain and low dark count rate, and a manufacturing method thereof.
The technical scheme for solving the problems is as follows: a bipolar composite single photon avalanche photodiode device includes a substrate; an annular DN-Well region and a circular DN-Well region are arranged on the substrate; the circular DN-Well area is positioned in the center of the device and is surrounded by the annular DN-Well area; the circular DN-Well region and the annular DN-Well region are separated by a substrate; the annular DN-Well region is sequentially provided with a first annular N-Well region, a second annular N-Well region and a third annular N-Well region from outside to inside; a first annular N+ injection region is arranged in the first annular N-Well region, a first annular P+ injection region is arranged in the second annular N-Well region, and a second annular N+ injection region is arranged in the third annular N-Well region; the surface of the annular DN-Well region is provided with a first annular polysilicon gate and a second annular polysilicon gate, the second annular polysilicon gate is positioned at the inner side of the first annular polysilicon gate, the first annular polysilicon gate is bridged between the first annular N+ injection region and the first annular P+ injection region, and the second annular polysilicon gate is bridged between the first annular P+ injection region and the second annular N+ injection region; a third annular N+ injection region and a circular P-Well region positioned at the inner side of the third annular N+ injection region are arranged in the circular DN-Well region; a second annular P+ injection region and a circular N+ injection region are sequentially arranged in the circular P-Well region from outside to inside; the first annular N+ injection region, the second annular N+ injection region and the third annular N+ injection region are led out to serve as cathodes of the bipolar composite single photon avalanche photodiode device; the circular N+ injection region is led out to be used as an anode of a bipolar composite single photon avalanche photodiode device; the first annular P+ injection region and the second annular P+ injection region are led out to serve as base electrodes of the bipolar type composite single photon avalanche photodiode device.
The bipolar composite single photon avalanche photodiode device is characterized in that a first annular shallow trench isolation region is arranged at the outer side of the first annular N+ injection region; the inner side and the outer side of the first annular shallow trench isolation region are respectively contacted with the outer side edge of the first annular N+ injection region and the edge of the substrate; the inner side and the outer side of the first annular polysilicon gate are respectively contacted with the outer side edge of the first annular P+ injection region and the inner side edge of the first annular N+ injection region; the inner side of the first annular P+ injection region is contacted with the outer side of the second annular polysilicon gate.
The bipolar composite single photon avalanche photodiode device is characterized in that a second annular shallow trench isolation region is arranged between the annular DN-Well region and the circular DN-Well region, and the inner side and the outer side of the second annular shallow trench isolation region are respectively contacted with the outer side edge of the third annular N+ injection region and the inner side edge of the second annular N+ injection region.
The bipolar composite single photon avalanche photodiode device is characterized in that a third annular shallow trench isolation region and a fourth annular shallow trench isolation region are arranged in the round DN-Well region, and the inner side and the outer side of the third annular shallow trench isolation region are respectively contacted with the outer side edge of the second annular P+ injection region and the inner side edge of the third annular N+ injection region; and the inner side edge and the outer side edge of the fourth annular shallow trench isolation region are respectively contacted with the outer side edge of the circular N+ injection region and the inner side edge of the second annular P+ injection region.
The bipolar composite single photon avalanche photodiode device is characterized in that the cathode is applied with the highest potential, the anode is grounded, the base electrode is connected with the next high potential, and the second annular N-Well region and the first annular P+ form a depletion region to form an avalanche multiplication region of the device; and the circular DN-Well region, the circular P-Well region and the circular N+ injection region form an NPN triode.
The bipolar composite single photon avalanche photodiode device is characterized in that the substrate is a P-type substrate area, and the annular DN-Well area and the circular DN-Well area are deep N-Well areas.
A manufacturing method of a bipolar composite single photon avalanche photodiode device comprises the following steps:
step one: forming an annular DN-Well region and a circular DN-Well region in the substrate by photolithography;
step two: forming first to fourth annular shallow trench isolation regions on a substrate by photolithography;
step three: forming a first annular N-Well region, a second annular N-Well region and a third annular N-Well region in the annular DN-Well region by photoetching, and forming a circular P-Well region in the circular DN-Well region;
step four: forming a first annular polysilicon gate and a second annular polysilicon gate in the annular DN-Well region through photoetching;
step five: forming a first annular P+ injection region in the second annular N-Well injection region and forming a second annular P+ injection region in the circular P-Well by photoetching;
step six: forming a first annular N+ injection region in the first annular N-Well region, forming a second annular N+ injection region in the second annular N-Well region, forming a third annular N+ injection region in the circular DN-Well region and forming a circular N+ injection region in the circular P-Well region by photoetching;
step seven: the first annular N+ injection region, the second annular N+ injection region and the third annular N+ injection region are led out to be used as cathodes of bipolar composite single photon avalanche photodiode devices; the circular N+ injection region is led out to be used as an anode of a bipolar composite single photon avalanche photodiode device; the first annular P+ injection region and the second annular P+ injection region are led out to serve as base electrodes of the bipolar type composite single photon avalanche photodiode device.
The invention has the beneficial effects that:
1. according to the invention, a depletion region formed by the first annular P+ injection region and the second annular N-Well region is used as an avalanche multiplication region, and the annular DN-Well region surrounds the side edge of the first annular P+ injection region and is used as a virtual protection ring to prevent device edge breakdown. In addition, the round DN-Well region, the round P-Well region and the round N+ injection region form an NPN triode structure, so that the combination of the single photon avalanche photodiode and the triode is realized, and the photocurrent is used as the base input current of the NPN triode, so that the photocurrent gain of the device is greatly increased.
2. The invention adopts the first annular polysilicon gate and the second annular polysilicon gate to replace the traditional shallow trench isolation region, so that the avalanche multiplication region is far away from the shallow trench isolation region, the energy level capturing effect caused by the surface defects of the material is greatly reduced, and the dark current and the dark count rate of the device are reduced.
3. The manufacturing process is simple, the operation is convenient, the layout of the manufactured bipolar composite single photon avalanche photodiode device is a circular concentric ring, the device does not violate the basic rule of layout design, and does not use layers beyond the standard CMOS process, so that the photocurrent gain of the single photon avalanche photodiode is effectively improved, and the noise is reduced.
Drawings
Fig. 1 is a schematic diagram of a cross section and parasitic structure of a conventional single photon avalanche photodiode.
Fig. 2 is a block diagram of a bipolar composite single photon avalanche photodiode device in accordance with an embodiment of the present invention.
Fig. 3 is a schematic diagram of the parasitic structure and operation of a bipolar composite single photon avalanche photodiode device in accordance with an embodiment of the present invention.
Fig. 4 is a top view of a bipolar composite single photon avalanche photodiode device in accordance with an embodiment of the present invention.
Description of the embodiments
The invention is further described below with reference to the drawings and examples.
As shown in fig. 2-4, a bipolar composite single photon avalanche photodiode device includes a substrate 101, the substrate 101 being a P-type substrate region; an annular DN-Well region 102 and a circular DN-Well region 103 are arranged on the substrate 101, and the annular DN-Well region 102 and the circular DN-Well region 103 are deep N Well regions. The circular DN-Well region 103 is positioned at the center of the device and is surrounded by the annular DN-Well region 102; the circular DN-Well region 103 and the annular DN-Well region 102 are separated by a substrate 101.
A first annular N-Well region 104, a second annular N-Well region 105 and a third annular N-Well region 106 are sequentially arranged in the annular DN-Well region 102 from outside to inside; a first annular n+ injection region 108 is arranged in the first annular N-Well region 104, a first annular p+ injection region 109 is arranged in the second annular N-Well region 105, and a second annular n+ injection region 110 is arranged in the third annular N-Well region 106; the surface of the annular DN-Well region 102 is provided with a first annular polysilicon gate 205 and a second annular polysilicon gate 206, the second annular polysilicon gate 206 is positioned at the inner side of the first annular polysilicon gate 205, the first annular polysilicon gate 205 is bridged between the first annular N+ injection region 108 and the first annular P+ injection region 109, and the second annular polysilicon gate 206 is bridged between the first annular P+ injection region 109 and the second annular N+ injection region 110; a third annular n+ injection region 111 and a circular P-Well region 107 positioned inside the third annular n+ injection region 111 are arranged in the circular DN-Well region 103; the circular P-Well region 107 is provided with a second annular P+ injection region 112 and a circular N+ injection region 113 in sequence from outside to inside.
The first annular n+ injection region 108, the second annular n+ injection region 110 and the third annular n+ injection region 111 are connected with the first metal layer 207, the third metal layer 209 and the fourth metal layer 210 through contact holes, a metal through hole 306 is formed in the seventh metal layer 305, and the first metal layer 207, the third metal layer 209 and the fourth metal layer 210 are connected with the seventh metal layer 305 through the metal through hole 306 and serve as a cathode of the bipolar composite single photon avalanche photodiode device; the circular n+ injection region 113 is connected with the sixth metal layer 212 through a contact hole, a metal through hole 302 is arranged on the ninth metal layer 301, and the sixth metal layer 212 is connected with the ninth metal layer 301 through the metal through hole 302 and is used as an anode of the bipolar composite single photon avalanche photodiode device; the first annular p+ injection region 109 and the second annular p+ injection region 112 are connected with the second metal layer 208 and the fifth metal layer 211 through contact holes, a metal through hole 304 is formed on the eighth metal layer 303, and the second metal layer 208 and the fifth metal layer 211 are connected with the eighth metal layer 303 through the metal through hole 304 and serve as a base electrode of the bipolar composite single photon avalanche photodiode device.
A first annular shallow trench isolation region 201 is arranged outside the first annular n+ injection region 108; the inner side and the outer side of the first annular shallow trench isolation region 201 are respectively contacted with the outer side edge of the first annular N+ injection region 108 and the edge of the substrate 101; the inner side and the outer side of the first annular polysilicon gate 205 are respectively contacted with the outer side edge of the first annular p+ injection region 109 and the inner side edge of the first annular n+ injection region 108; the inner side of the first annular p+ implant region 109 is in contact with the outer side of the second annular polysilicon gate 206.
A second annular shallow trench isolation region 202 is disposed between the annular DN-Well region 102 and the circular DN-Well region 103, and the inner side and the outer side of the second annular shallow trench isolation region 202 are respectively contacted with the outer side edge of the third annular n+ implantation region 111 and the inner side edge of the second annular n+ implantation region 110.
A third annular shallow trench isolation region 203 and a fourth annular shallow trench isolation region 204 are arranged in the circular DN-Well region 103, and the inner side and the outer side of the third annular shallow trench isolation region 203 are respectively contacted with the outer side edge of the second annular p+ injection region 112 and the inner side edge of the third annular n+ injection region 111; the inner and outer edges of the fourth annular shallow trench isolation region 204 are respectively contacted with the outer edge of the circular n+ implantation region 113 and the inner edge of the second annular p+ implantation region 112.
The working principle of the bipolar composite single photon avalanche photodiode device is as follows: under illumination conditions, the device cathode is connected with high potential, the device anode is grounded, the device base is connected with next high potential, and the voltage difference between the high potential and the next high potential is larger than the avalanche breakdown voltage of the second annular N-Well region 105 and the first annular P+ injection region 109, so that the single photon avalanche photodiode works in geiger mode. The depletion region formed by the second annular N-Well region 105 and the first annular p+ injection region 109 has a strong electric field, and forms an avalanche multiplication region of the device. The circular DN-Well region 103, the circular P-Well region 107 and the circular N+ implantation region 113 form an NPN triode. When photons are absorbed by the depletion region of the device, electrons in the valence band jump to the conduction band after acquiring photon energy, and are accelerated under the action of a strong electric field to acquire higher energy, so that new electron-hole pairs are generated by collision with the crystal lattice. By repeating the above steps, the number of carriers increases sharply, avalanche multiplication is realized, and macroscopic photocurrent is generated. The photocurrent generated by the avalanche multiplication region is used as the base input current of the parasitic NPN triode, the collector of the NPN triode is in high potential, the base of the NPN triode is in sub-high potential, the parasitic NPN triode works in the amplifying region, and the photocurrent is amplified through the NPN triode structure and then output to the anode of the device, so that higher photocurrent gain is realized. In summary, the bipolar composite single photon avalanche photodiode device realizes the combination of the single photon avalanche photodiode and the triode, and can greatly enhance the photocurrent gain of the device.
The first annular polysilicon gate 205 and the second annular polysilicon gate 206 replace the conventional shallow trench isolation region, so that the avalanche multiplication region of the device is far away from the shallow trench isolation region, the energy level capturing effect caused by surface defects of materials is greatly reduced, and the dark current and the dark count rate of the device are reduced.
The avalanche multiplication region formed by the first annular p+ injection region 109 and the second annular N-Well region 105 works under the action of a strong electric field, and the charge density is high at the place with large curvature of the surface of the device, and the electric field is strong. In order to prevent the edge breakdown from affecting photon detection, the first annular DN-Well region 102 is used for surrounding the side edge of the avalanche multiplication region to form a virtual protection ring, so that the avalanche breakdown is prevented from happening in advance at the edge of the avalanche multiplication region.
A manufacturing method of a bipolar composite single photon avalanche photodiode device comprises the following steps:
step one: forming a ring-shaped DN-Well region 102 and a circular DN-Well region 103 in a substrate 101 by first photolithography;
step two: forming a first annular shallow trench isolation region 201, a second annular shallow trench isolation region 202, a third annular shallow trench isolation region 203, and a fourth annular shallow trench isolation region 204 on the substrate 101 by a second photolithography;
step three: forming a first annular N-Well region 104, a second annular N-Well region 105 and a third annular N-Well region 106 in the annular DN-Well region 102 through third photoetching; forming a circular P-Well region 107 in the circular DN-Well region 103 by a fourth photolithography;
step four: forming a first annular polysilicon gate 205 and a second annular polysilicon gate 206 in the annular DN-Well region 102 through fifth photoetching;
step five: forming a first annular P+ implantation region 109 in the second annular N-Well implantation region and a second annular P+ implantation region 112 in the circular P-Well by a sixth photolithography;
step six: forming a first annular N+ implantation region 108 in the first annular N-Well region 104, a second annular N+ implantation region 110 in the second annular N-Well region 105, a third annular N+ implantation region 111 in the circular DN-Well region 103, and a circular N+ implantation region 113 in the circular P-Well region 107 by seventh photolithography;
step seven: extracting the first annular N+ injection region 108, the second annular N+ injection region 110 and the third annular N+ injection region 111 to be used as a cathode of the bipolar composite single photon avalanche photodiode device; the circular N+ injection region 113 is led out to be used as an anode of the bipolar composite single photon avalanche photodiode device; the first annular p+ implant 109 and the second annular p+ implant 112 are drawn out as bases for a bipolar compound single photon avalanche photodiode device.
Claims (7)
1. A bipolar composite single photon avalanche photodiode device characterized in that: comprises a substrate;
an annular DN-Well region and a circular DN-Well region are arranged on the substrate; the circular DN-Well area is positioned in the center of the device and is surrounded by the annular DN-Well area; the circular DN-Well region and the annular DN-Well region are separated by a substrate;
the annular DN-Well region is sequentially provided with a first annular N-Well region, a second annular N-Well region and a third annular N-Well region from outside to inside; a first annular N+ injection region is arranged in the first annular N-Well region, a first annular P+ injection region is arranged in the second annular N-Well region, and a second annular N+ injection region is arranged in the third annular N-Well region; the surface of the annular DN-Well region is provided with a first annular polysilicon gate and a second annular polysilicon gate, the second annular polysilicon gate is positioned at the inner side of the first annular polysilicon gate, the first annular polysilicon gate is bridged between the first annular N+ injection region and the first annular P+ injection region, and the second annular polysilicon gate is bridged between the first annular P+ injection region and the second annular N+ injection region;
a third annular N+ injection region and a circular P-Well region positioned at the inner side of the third annular N+ injection region are arranged in the circular DN-Well region; a second annular P+ injection region and a circular N+ injection region are sequentially arranged in the circular P-Well region from outside to inside;
the first annular N+ injection region, the second annular N+ injection region and the third annular N+ injection region are led out to serve as cathodes of the bipolar composite single photon avalanche photodiode device; the circular N+ injection region is led out to be used as an anode of a bipolar composite single photon avalanche photodiode device; the first annular P+ injection region and the second annular P+ injection region are led out to serve as base electrodes of the bipolar type composite single photon avalanche photodiode device.
2. The bipolar composite single photon avalanche photodiode device of claim 1, wherein: a first annular shallow trench isolation region is arranged at the outer side of the first annular N+ injection region; the inner side and the outer side of the first annular shallow trench isolation region are respectively contacted with the outer side edge of the first annular N+ injection region and the edge of the substrate; the inner side and the outer side of the first annular polysilicon gate are respectively contacted with the outer side edge of the first annular P+ injection region and the inner side edge of the first annular N+ injection region; the inner side of the first annular P+ injection region is contacted with the outer side of the second annular polysilicon gate.
3. The bipolar composite single photon avalanche photodiode device of claim 2, wherein: and a second annular shallow trench isolation region is arranged between the annular DN-Well region and the circular DN-Well region, and the inner side and the outer side of the second annular shallow trench isolation region are respectively contacted with the outer side edge of the third annular N+ injection region and the inner side edge of the second annular N+ injection region.
4. The bipolar composite single photon avalanche photodiode device of claim 3, wherein: a third annular shallow trench isolation region and a fourth annular shallow trench isolation region are arranged in the round DN-Well region, and the inner side and the outer side of the third annular shallow trench isolation region are respectively contacted with the outer side edge of the second annular P+ injection region and the inner side edge of the third annular N+ injection region; and the inner side edge and the outer side edge of the fourth annular shallow trench isolation region are respectively contacted with the outer side edge of the circular N+ injection region and the inner side edge of the second annular P+ injection region.
5. The bipolar composite single photon avalanche photodiode device of claim 4, wherein: the cathode is applied with the highest potential, the anode is grounded, the base electrode is connected with the next high potential, and the second annular N-Well region and the first annular P+ form a depletion region to form an avalanche multiplication region of the device; and the circular DN-Well region, the circular P-Well region and the circular N+ injection region form an NPN triode.
6. The bipolar composite single photon avalanche photodiode device of claim 1, wherein: the substrate is a P-type substrate area, and the annular DN-Well area and the circular DN-Well area are deep N-Well areas.
7. A method of fabricating a bipolar composite single photon avalanche photodiode device according to any of claims 1-6, comprising the steps of:
step one: forming an annular DN-Well region and a circular DN-Well region in the substrate by photolithography;
step two: forming first to fourth annular shallow trench isolation regions on a substrate by photolithography;
step three: forming a first annular N-Well region, a second annular N-Well region and a third annular N-Well region in the annular DN-Well region by photoetching, and forming a circular P-Well region in the circular DN-Well region;
step four: forming a first annular polysilicon gate and a second annular polysilicon gate in the annular DN-Well region through photoetching;
step five: forming a first annular P+ injection region in the second annular N-Well injection region and forming a second annular P+ injection region in the circular P-Well by photoetching;
step six: forming a first annular N+ injection region in the first annular N-Well region, forming a second annular N+ injection region in the second annular N-Well region, forming a third annular N+ injection region in the circular DN-Well region and forming a circular N+ injection region in the circular P-Well region by photoetching;
step seven: the first annular N+ injection region, the second annular N+ injection region and the third annular N+ injection region are led out to be used as cathodes of bipolar composite single photon avalanche photodiode devices; the circular N+ injection region is led out to be used as an anode of a bipolar composite single photon avalanche photodiode device; the first annular P+ injection region and the second annular P+ injection region are led out to serve as base electrodes of the bipolar type composite single photon avalanche photodiode device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310282826.0A CN116314423A (en) | 2023-03-21 | 2023-03-21 | Bipolar composite single photon avalanche photodiode device and manufacturing method thereof |
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| CN202310282826.0A CN116314423A (en) | 2023-03-21 | 2023-03-21 | Bipolar composite single photon avalanche photodiode device and manufacturing method thereof |
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2023
- 2023-03-21 CN CN202310282826.0A patent/CN116314423A/en not_active Withdrawn
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Application publication date: 20230623 |