CN116313825A - Composite multilayer metal substrate, preparation method thereof and power semiconductor device - Google Patents

Composite multilayer metal substrate, preparation method thereof and power semiconductor device Download PDF

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CN116313825A
CN116313825A CN202310054856.6A CN202310054856A CN116313825A CN 116313825 A CN116313825 A CN 116313825A CN 202310054856 A CN202310054856 A CN 202310054856A CN 116313825 A CN116313825 A CN 116313825A
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target
laser
self
substrate
noble metal
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贾强
周博龙
郭福
王乙舒
马立民
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Beijing University of Technology
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Beijing University of Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency

Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a composite multilayer metal substrate, a preparation method thereof and a power semiconductor device. The method comprises the following steps: fixing a target material and a substrate in the reaction cavity, and heating the substrate; starting a first laser to bombard a first noble metal target, and depositing a first noble metal film on a substrate; stopping working of the first laser, starting the second laser to bombard a second noble metal target, and depositing a second noble metal film on the first noble metal film; converting the bombarded target of the first pulse laser into a first self-propagating metal target, and converting the bombarded target of the second pulse laser into a second self-propagating metal target; alternately enabling the first laser and the second laser to work to form a self-propagating metal film, and obtaining the self-propagating metal film. The metal substrate prepared by the method has an antioxidation effect and a solder connection effect, can be directly attached to a chip, improves the preparation efficiency of a power device, and simultaneously avoids chemical pollution and organic matter survival.

Description

Composite multilayer metal substrate, preparation method thereof and power semiconductor device
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a composite multilayer metal substrate, a preparation method thereof and a power semiconductor device.
Background
With the rapid development of third generation power semiconductor devices, a wide bandgap semiconductor chip represented by SiC plays an increasingly important role in high-power electronic power devices, has the characteristics of high temperature, high voltage, high frequency, low loss and the like, and can be widely applied to a high-power circuit control system, so that the application of the wide bandgap semiconductor chip in the power devices is promoted to be a research hotspot.
Currently, it has been reported commercially or in literature that the package of a wide bandgap semiconductor chip applied in a power device is mainly connected in the form of a bottom substrate (electroless nickel-plated gold-plated substrate, copper-clad ceramic substrate, etc.), a middle solder, and a top chip. The application range of the wide bandgap semiconductor chip in the power device is related to the substrate and the solder, and the preparation method of the substrate is mostly prepared by chemical methods at present, including electroplating, chemical reaction deposition and the like. Gold particles are attached to the surface of a circuit board to form a thin layer of gold on bare copper in an electrolytic and electroplating chemical mode, or a layer of plating layer is generated by a chemical oxidation-reduction reaction method through a chemical deposition method, and the thickness is generally thicker.
Currently, most of the substrates used for packaging are electroless nickel immersion Jin Jiban (ENIG substrate), which uses a chemical method to plate nickel and gold on the substrate surface, and other noble metals such as palladium are used as catalysts for electroless nickel deposition reaction in the actual production process, so as to deposit a layer of nickel to prevent migration and diffusion between copper and gold. When chemical deposition is carried out, coarse, loose and porous grain arrangement is formed due to irregular deposition, so that a nickel layer and a gold layer are not compact, migration and diffusion can be generated between copper and gold, nickel contact air is oxidized, nickel rust is formed under the gold layer to cause connection obstruction, the whole ENIG substrate is complex and cumbersome in chemical preparation process, uncontrollable variables are easy to appear to cause substrate failure, and resource waste is caused.
Regarding the physical preparation of the substrate noble metal layer, the wuhan-li-dado technology company, inc. has proposed a method of hybrid integration of thin and thick films on a ceramic substrate (CN 114188300 a). The thin film prepared by the semiconductor thin film process (the thin film is deposited by a magnetron sputtering method) and the thick film prepared by the pattern electroplating process are electrically connected through the surface metal layer, and then noble metals such as nickel and gold are required to be plated by a chemical method when the surface treatment is carried out, wherein titanium, chromium and nickel are only deposited by the magnetron sputtering method, then nickel and gold are chemically deposited on the copper layer, and the problem of using chemical reagents still exists.
The existing material applied to the middle layer solder is mainly nano silver solder paste, and the metal silver nano particles and volatilizable organic matters are mixed together by utilizing the unique size effect of the nano particles to realize chip sintering connection, but the problem that the organic matters are not volatilized in time and remain to influence sintering quality exists. When packaging is carried out, the soldering paste is firstly required to be printed on the substrate, and then chip mounting, drying and sintering are carried out, so that the whole packaging process is complex in steps.
The self-propagating metal film is a technology of utilizing reaction heating synthetic materials among various metal films, shenzhen Flat-invasive semiconductor limited company proposes a nano copper sintering method (CN 115351377A) based on the self-propagating film, which comprises the steps of firstly coating a layer of nano copper soldering paste on a substrate, then utilizing magnetron sputtering to deposit the self-propagating film, and then coating a layer of nano copper soldering paste, so as to perform sintering, but the complicated step of preparing the substrate by a chemical method and the subsequent printing step of the soldering paste are not avoided.
Disclosure of Invention
The invention provides a composite multilayer metal substrate, a preparation method thereof and a power semiconductor device, aiming at the problems existing in the prior art. Furthermore, the noble metal layer can be more compact by heating through the heating module, and the self-propagating metal film can release high interfacial energy in the bonding process by utilizing intermetallic reactive bonding, so that interconnection can be realized in a shorter time at a relatively low temperature and pressure.
Specifically, the invention provides the following technical scheme:
a preparation method of a composite multilayer metal substrate comprises the following steps:
1) Providing a pulse laser deposition device, wherein the pulse laser deposition device comprises a reaction cavity and a laser device;
the reaction cavity comprises a first target holder, a second target holder and a sample holder; the first target holder is used for bearing a first noble metal target and a first self-propagating metal target which are mutually independent; the second target holder is used for bearing a second noble metal target and a second self-propagating metal target which are mutually independent; the sample holder is used for carrying a substrate;
the laser device comprises a first laser and a second laser; the first laser is used for emitting first pulse laser to scan the surface of the target material of the first target holder; the second laser is used for emitting second pulse laser to scan the surface of the target material of the second target holder;
2) Fixing the first noble metal target, the first self-propagating metal target, the second noble metal target, the second self-propagating metal target and the substrate in the reaction cavity, and heating the substrate;
3) Starting the first laser, and emitting first pulse laser to bombard a first noble metal target on the first target holder, so as to deposit a first noble metal film on the substrate;
4) Stopping the first laser, starting the second laser, and emitting a second pulse laser to bombard a second noble metal target on the second target holder, so that a second noble metal film is deposited on the first noble metal film;
5) Stopping the second laser, adjusting the first target holder and the second target holder, converting the bombarded target of the first pulse laser into a first self-propagating metal target, and converting the bombarded target of the second pulse laser into a second self-propagating metal target;
6) And alternately enabling the first laser and the second laser to work, enabling the first pulse laser to bombard the first self-propagating metal target material and the second pulse laser to bombard the second self-propagating metal target material to be alternately performed, and alternately depositing the first self-propagating metal and the second self-propagating metal on the second noble metal film to form a self-propagating metal film, thus obtaining the composite multilayer metal substrate.
The composite multilayer metal substrate prepared by the preparation method has the oxidation resistance effect and the connection effect of the solder, can be directly attached to a chip, omits the steps of printing soldering paste and drying in the attaching process, simplifies the chip connection process flow, shortens the sintering time, saves the time cost and improves the preparation efficiency of the power device. Meanwhile, the preparation method of the substrate is physical preparation, so that the problem of chemical pollution generated when a common substrate is prepared by a chemical method can be avoided, and the problem of residual organic matters during sintering of nano soldering paste can be avoided.
Meanwhile, the self-propagating film prepared by pulse laser deposition is composed of nano particles, the existence of the nano particles is favorable for the sintering connection process of the self-propagating film, and the self-propagating film prepared by other physical methods has no such characteristics. In addition, in general, the self-propagating film is prepared by a magnetron sputtering method, in the preparation process, the self-propagating film is bombarded by electrons, so that the temperature of the self-propagating film is increased, the inter-diffusion coefficient among atoms is increased, and thus mutual diffusion and pre-reaction are generated, but when the thickness of a pre-reaction mutual-dissolving area is larger than that of the whole self-propagating film, the less residues are available for reaction during connection, the heat loss of the self-propagating reaction is increased, the heat release quantity of the self-propagating film is reduced, and the effect of the self-propagating film is lost. The invention adopts double-beam pulse laser to deposit the self-propagating film, ensures the stable and controllable temperature of the self-propagating film in the deposition process, reduces the mutual diffusion among self-propagating metals and can also ensure the deposition efficiency.
Preferably, the reaction chamber further comprises a mask plate, and the mask plate can move to the upper part of the sample holder so as to control the deposition area of the self-propagating metal film; in step 5), after stopping the second laser, the mask plate is moved to above the sample holder.
Further preferably, the mask plate has a plurality of chip-sized openings defining a deposition area of the self-propagating metal film. In order to realize the connection of multiple chips, after a noble metal layer is deposited on a substrate, a deposition area is controlled by using a mask plate with various chip sizes to be connected, and a self-propagating metal film is deposited at a connection fixing position of the substrate and the chips, so that the deposition of the self-propagating metal film on the substrate can be reduced, the use of the substrate is prevented from being influenced, and simultaneously, multiple chips and the substrate can be simultaneously sintered and connected. The mask plate can be processed and replaced according to the size of the required connecting chip, and is not limited to a single-size mask plate.
In a preferred embodiment, as shown in fig. 2, the first and second backing plates are configured to control the switching between the respective targets by backing plate rotation.
Preferably, in step 2), the substrate is heated to 24 ℃ to 700 ℃, preferably 24 ℃ to 200 ℃.
Preferably, the materials of the first noble metal target and the second noble metal target are each independently selected from one of titanium, gold, silver, and nickel, and the material of the first noble metal target is different from the material of the second noble metal target;
further preferably, the material of the first noble metal target is nickel, and the material of the second noble metal target is gold; or, the material of the first noble metal target is nickel, and the material of the second noble metal target is silver.
Preferably, the first self-propagating metal target and the second self-propagating metal targetThe material combination of the material is selected from Ti and Al, al and Ni, ti and Ni, ni and Si, nb and Si, al and CuO, al and Cu 2 O, al and one of Pt, ag and Cu, ag and In.
Preferably, the thickness of the first noble metal thin film is 1 μm to 10 μm;
the thickness of the second noble metal film is 5nm-1000nm;
the thickness of the self-propagating metal film is 10-200 mu m.
Preferably, the first laser and the second laser are one selected from nanosecond laser, picosecond laser and femtosecond laser.
Preferably, the first pulse laser frequency emitted by the first laser is 200kHz-800kHz, and the power is 40W-100W;
the second pulse laser frequency emitted by the second laser is 200kHz-800kHz, and the power is 40W-100W.
Preferably, the deposition atmosphere of the reaction chamber is vacuum environment, inert atmosphere (such as N 2 Ar), a reducing atmosphere (e.g., formic acid).
The invention also provides a composite multilayer metal substrate, which is prepared by the preparation method.
The invention also provides a power semiconductor device, which comprises the composite multilayer metal substrate and a power chip;
the connection between the composite multilayer metal substrate and the power chip adopts direct sintering connection.
At present, the most used connecting material in power electronic device packages is metal solder paste, and a solder paste printing step is indispensable when chip connection is performed. The chip (such as SiC, gaN or Si) can be directly arranged on the composite multilayer metal substrate to form an interconnection structure, and then the chip and the substrate are connected by low-temperature sintering (preferably, the low-temperature sintering process parameters are auxiliary pressure 0MPa-50MPa, sintering temperature 150-300 ℃ and sintering time 0-60 min). The self-propagating film designed in the invention plays a role in connection during packaging, and the step of printing soldering paste is omitted. The composite multilayer metal substrate designed by the invention has the advantages of integration and simplified chip connection process flow.
Compared with the existing substrate preparation method, the invention has the beneficial effects that:
the preparation method of the composite multilayer metal substrate provided by the invention is based on a double-target double-beam co-deposition technology, and adopts two multi-target loading devices, so that a vacuum chamber can be simultaneously placed with a plurality of targets, pulse lasers can process a plurality of metals, noble metals and self-propagating metal films are sequentially deposited on the substrate, and the alternate deposition is realized by using double-beam pulse lasers in the deposition process, thereby greatly improving the deposition efficiency and saving the time cost. Meanwhile, in order to be further suitable for chip connection, the multi-chip-size mask plate is adopted, a self-propagating metal film can be deposited at a substrate fixing position, and multiple chips and the substrate can be sintered and connected simultaneously.
The composite multi-layer metal substrate prepared by the method has the oxidation resistance effect of the common substrate and the connection effect of the solder, can be directly attached to a chip, omits the steps of printing soldering paste and drying in the attaching process, simplifies the chip connection process flow, shortens the sintering time, saves the time cost and improves the preparation efficiency of the power device. The preparation method of the substrate is a physical method, so that the problem of chemical pollution generated when a common substrate is prepared by a chemical method can be avoided, and the problem of residual organic matters during sintering of nano soldering paste can be avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will briefly explain the drawings needed in the embodiments or the prior art, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a dual-target dual-beam co-deposition system, wherein 1-1 is a first laser, 1-2 is a second laser, 2 is a first mirror, 3 is a second mirror, 4 is a third mirror, 5 is a second vibrating mirror, 6 is a first vibrating mirror, 7 is a first field lens, 8 is a second field lens, 9 is a second incident window, 10 is a first incident window, 11 is a sample holder, 12 is a heating module, 13 is a mask plate, 14 is a gas through hole, A is a first target holder, B is a second target holder, I is a first pulse laser, and II is a second pulse laser.
Fig. 2 shows a multi-target loading device used in the present invention.
FIG. 3 is a flow chart of the method according to the present invention.
FIG. 4 is a schematic diagram of a composite multi-layer metal substrate prepared according to an embodiment, wherein 4-1 is a Cu substrate, 4-2 is a noble metal nickel layer, 4-3 is a noble metal gold layer, 4-4 is a self-propagating metal thin film, 4-5 is a nickel layer, 4-6 is an aluminum layer, and 4-7 is a SiC chip.
FIG. 5 is a schematic diagram of a composite multi-layered metal substrate prepared in example two, in which 5-1 is a Cu substrate, 5-2 is a noble metal nickel layer, 5-3 is a noble metal gold layer, 5-4 is a self-propagating metal thin film, 5-5 is a silver layer, 5-6 is a copper layer, and 5-7 is a SiC chip.
FIG. 6 is a schematic diagram of a composite multi-layered metal substrate prepared in example three, in which 6-1 is a Cu substrate, 6-2 is a noble metal nickel layer, 6-3 is a noble metal gold layer, 6-4 is a self-propagating metal thin film, 6-5 is a silver layer, 6-6 is an indium layer, and 6-7 is a SiC chip.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The specific techniques or conditions are not identified in the examples and are described in the literature in this field or are carried out in accordance with the product specifications. The reagents or equipment used were conventional products available for purchase by regular vendors without the manufacturer's attention.
In the following examples, the pulse laser deposition apparatus is shown in fig. 1, and includes a reaction chamber and a laser apparatus;
the reaction chamber comprises a first target holder A, a second target holder B, a sample holder 11, a heating module 12 and a mask plate 13;
the first target holder A and the second target holder B are multi-target loading devices; the first target holder A is used for bearing a first noble metal target and a first self-propagating metal target which are mutually independent; the second target holder B is used for bearing a second noble metal target and a second self-propagating metal target which are mutually independent; the sample holder 11 is used for carrying a substrate; the heating module 12 is used for heating the substrate carried on the sample holder 11; the mask plate 13 can be moved to the upper part of the sample holder 11 so as to control the deposition area of the self-propagating metal film;
a first incidence window 10 for transmitting the first pulse laser I and a second incidence window 9 for transmitting the second pulse laser II are arranged on the cavity wall of the reaction cavity;
the reaction cavity is also provided with a gas through hole 14 for introducing inert gas or reducing gas or connecting a vacuum pump to vacuumize the reaction cavity;
the laser device comprises a first laser 1-1, a second laser 1-2, a first reflecting mirror 2, a second reflecting mirror 3, a third reflecting mirror 4, a second vibrating mirror 5, a first vibrating mirror 6, a first field lens 7 and a second field lens 8;
the first laser 1-1 is used for emitting a first pulse laser I to scan on the target surface of the first target holder A (the halfway passes through the first reflecting mirror 2, the second reflecting mirror 3, the first vibrating mirror 6 and the first field lens 7); the second laser 1-2 is used for emitting second pulse laser II to scan the target surface of the second target holder B (the halfway of the second laser II passes through the third reflecting mirror 4, the second vibrating mirror 5 and the second field lens 8);
the first reflecting mirror 2 and the second reflecting mirror 3 are used for reflecting the first pulse laser light I to the first vibrating mirror 6; the first galvanometer 6 is used for enabling the first pulse laser I to scan on the surface of the target; the first field lens 7 serves to focus the incident laser light;
the third reflecting mirror 4 is used for reflecting the second pulse laser light II to the second vibrating mirror 5; the second galvanometer 5 is used for enabling the second pulse laser II to scan on the surface of the target; the second field lens 8 functions to focus the incident laser light.
Example 1
Example 1 provides a method for preparing a composite multilayer metal substrate, see in part fig. 3, comprising the steps of:
step one: deposition targets were selected, nickel (purity > 99.99%) was placed in a first target holder a, gold, aluminum (purity > 99.99%) was placed in a second target holder B, and bare copper substrates were placed in the sample holder 11.
Step two: the two laser beams emitted by the first laser 1-1 and the second laser 1-2 are picosecond laser, the power is 60W, the frequency is 400KHZ, the distance from the target material to the substrate is 30mm, the scanning speed of the vibrating mirror is 1m/s, and the vacuum chamber is vacuumized at the same time, and the vacuum degree is 10 -3 Pa。
Step three: firstly, a bare copper substrate is heated by a heating module 12, the heating temperature is 150 ℃, meanwhile, a first pulse laser I bombards a nickel target (the bombarding time is 2min, the deposition thickness is about 3 mu m), a nickel layer is deposited on the substrate to block migration and diffusion between gold and copper of the substrate, then the first pulse laser I stops, meanwhile, a second pulse laser II bombards the gold target (the bombarding time is 10s, the deposition thickness is about 0.2 mu m), a compact gold layer is deposited on the nickel layer to block oxidization of the nickel layer, a noble metal layer is formed on the substrate, then the first pulse laser II stops, and then a mask 13 with a chip size is rotated onto the substrate, revolved through a second target holder B and switched to an aluminum target. Meanwhile, the first pulse laser I and the second pulse laser II alternately work to bombard nickel and aluminum (the single bombard nickel time is 2min, the deposition thickness is about 3 mu m, the single bombard aluminum time is 1min, the deposition thickness is about 3 mu m), nickel-aluminum films are alternately deposited on a gold layer of a substrate, the total deposition time is 30min, the total deposition thickness is about 60 mu m, and finally the nickel layer is on a surface layer (the nickel layer is deposited finally to prevent oxidation of the aluminum layer, so that the composite multi-layer metal substrate has better connection performance), thereby preparing the self-propagating metal film and completing the preparation of the composite multi-layer metal substrate, and can be partially shown in fig. 4, wherein 4-1 is a Cu substrate, 4-2 is a noble metal nickel layer, 4-3 is a noble metal gold layer, 4-4 is a self-propagating metal film, 4-5 is a nickel layer, 4-6 is an aluminum layer, and 4-7 is a SiC chip.
Example 2
Example 2 provides a method for preparing a composite multilayer metal substrate, comprising the steps of:
step one: the deposition target is selected, a nickel target and a silver target (purity is more than 99.99%) are placed in a plurality of first target holders A, a gold target and a copper target (purity is more than 99.99%) are placed in a second target holder B, and a bare copper substrate is placed at the position of a sample holder 11.
Step two: the two laser beams emitted by the first laser 1-1 and the second laser 1-2 are picosecond laser, the power is 60W, the distance from the target material to the substrate is 30mm, the scanning speed of the vibrating mirror is 1m/s, and the vacuum chamber is vacuumized at the same time, and the vacuum degree is 10 -3 Pa。
Step three: first, the bare copper substrate is heated by the heating module 12 at 200 ℃, and the first pulse laser i bombards the nickel target for 2min, and the deposition thickness is about 3 μm. And depositing a nickel layer on the substrate to block migration and diffusion between gold and copper on the substrate, stopping the first pulse laser I, and switching to a silver target through revolution of the first target holder A. And simultaneously, the second pulse laser II bombards the gold target, a compact gold layer is deposited on the nickel layer for 10 seconds, the deposition thickness is about 0.2 mu m, oxidation of the nickel layer is blocked, a noble metal layer is formed on the substrate, and then the second pulse laser II stops, so that the heating module 12 stops heating. Then, the mask 13 with the chip size is rotated to the substrate, and the second target B revolves, so that the copper target is switched. At this time, argon was introduced at a pressure of 500Pa. And then the first pulse laser I and the second pulse laser II alternately work to bombard a silver target material and a copper target material (the single silver bombarding time is 2min, the deposition thickness is about 6 mu m, the single copper bombarding time is 3min, the deposition thickness is about 6 mu m), loose silver-copper films are alternately deposited on a gold layer of a substrate, the reaction between the films can be conveniently accelerated, the total deposition time is 30min, the total deposition thickness is about 72 mu m, the silver layer is finally on a surface layer, and finally the silver layer is deposited to prevent the oxidation of a copper layer, so that the loose self-propagating metal film is prepared, and the preparation of the composite multilayer metal substrate is completed.
Example 3
Example 3 provides a method for preparing a composite multi-layered metal substrate, which is different from example 1 in that the first step selects the self-propagating metal thin film layer material to be silver and indium. The heating temperature of the heating module 12 was 100℃and the deposition vacuum degree was 10 - 4 Pa, other process conditions and steps are the same as those of example 1, and can be partially seen in FIG. 6, 6-1 is a Cu substrate, 6-2 is a noble metal nickel layer, 6-3 is a noble metal gold layer, 6-4 is a self-propagating metal thin film, 6-5 is a silver layer, 6-6 is an indium layer, and 6-7 is a SiC chip.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. The preparation method of the composite multilayer metal substrate is characterized by comprising the following steps of:
1) Providing a pulse laser deposition device, wherein the pulse laser deposition device comprises a reaction cavity and a laser device;
the reaction cavity comprises a first target holder, a second target holder and a sample holder; the first target holder is used for bearing a first noble metal target and a first self-propagating metal target which are mutually independent; the second target holder is used for bearing a second noble metal target and a second self-propagating metal target which are mutually independent; the sample holder is used for carrying a substrate;
the laser device comprises a first laser and a second laser; the first laser is used for emitting first pulse laser to scan the surface of the target material of the first target holder; the second laser is used for emitting second pulse laser to scan the surface of the target material of the second target holder;
2) Fixing the first noble metal target, the first self-propagating metal target, the second noble metal target, the second self-propagating metal target and the substrate in the reaction cavity, and heating the substrate;
3) Starting the first laser, and emitting first pulse laser to bombard a first noble metal target on the first target holder, so as to deposit a first noble metal film on the substrate;
4) Stopping the first laser, starting the second laser, and emitting a second pulse laser to bombard a second noble metal target on the second target holder, so that a second noble metal film is deposited on the first noble metal film;
5) Stopping the second laser, adjusting the first target holder and the second target holder, converting the bombarded target of the first pulse laser into a first self-propagating metal target, and converting the bombarded target of the second pulse laser into a second self-propagating metal target;
6) And alternately enabling the first laser and the second laser to work, enabling the first pulse laser to bombard the first self-propagating metal target material and the second pulse laser to bombard the second self-propagating metal target material to be alternately performed, and alternately depositing the first self-propagating metal and the second self-propagating metal on the second noble metal film to form a self-propagating metal film, thus obtaining the composite multilayer metal substrate.
2. The method according to claim 1, wherein the reaction chamber further comprises a mask plate, the mask plate being movable to above the sample holder, thereby controlling a deposition area of the self-propagating metal thin film; in step 5), after stopping the second laser, the mask plate is moved to above the sample holder.
3. The method of claim 1 or 2, wherein in step 2), the substrate is heated to 24 ℃ to 700 ℃.
4. A method of producing according to any one of claims 1 to 3, wherein the materials of the first noble metal target and the second noble metal target are each independently selected from one of titanium, gold, silver, nickel, and the material of the first noble metal target is different from the material of the second noble metal target;
preferably, the material of the first noble metal target is nickel, and the material of the second noble metal target is gold; or, the material of the first noble metal target is nickel, and the material of the second noble metal target is silver.
5. The method of any one of claims 1-4, wherein the combination of materials of the first and second self-propagating metal targets is selected from the group consisting of Ti and Al, al and Ni, ti and Ni, ni and Si, nb and Si, al and CuO, al and Cu 2 O, al and one of Pt, ag and Cu, ag and In.
6. The method according to any one of claims 1 to 5, wherein the first laser and the second laser are one selected from nanosecond laser, picosecond laser, and femtosecond laser.
7. The method according to any one of claims 1 to 6, wherein the first pulse laser emitted from the first laser has a frequency of 200kHz to 800kHz and a power of 40W to 100W;
the second pulse laser frequency emitted by the second laser is 200kHz-800kHz, and the power is 40W-100W.
8. The method according to any one of claims 1 to 7, wherein the deposition atmosphere of the reaction chamber is one of a vacuum atmosphere, an inert atmosphere, and a reducing atmosphere.
9. A composite multilayer metal substrate prepared by the preparation method of any one of claims 1 to 8.
10. A power semiconductor device comprising the composite multilayer metal substrate of claim 9 and a power chip;
the connection between the composite multilayer metal substrate and the power chip adopts direct sintering connection.
CN202310054856.6A 2023-02-03 2023-02-03 Composite multilayer metal substrate, preparation method thereof and power semiconductor device Pending CN116313825A (en)

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CN202310054856.6A CN116313825A (en) 2023-02-03 2023-02-03 Composite multilayer metal substrate, preparation method thereof and power semiconductor device

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