CN116301151A - Low-dropout broadband linear voltage stabilizer with low-voltage input-output characteristics - Google Patents

Low-dropout broadband linear voltage stabilizer with low-voltage input-output characteristics Download PDF

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CN116301151A
CN116301151A CN202310070930.3A CN202310070930A CN116301151A CN 116301151 A CN116301151 A CN 116301151A CN 202310070930 A CN202310070930 A CN 202310070930A CN 116301151 A CN116301151 A CN 116301151A
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node
transistor
base
voltage
emitter
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季轻舟
魏廷存
魏海龙
刘智
廖雪
赵杰
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Northwestern Polytechnical University
Xian Microelectronics Technology Institute
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Northwestern Polytechnical University
Xian Microelectronics Technology Institute
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/561Voltage to current converters
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

The invention discloses a low-voltage difference broadband linear voltage stabilizer with low-voltage input and output characteristics, and belongs to the field of power management integrated circuits. And comparing and amplifying the voltage signal after the voltage division output by the linear voltage stabilizer with the reference voltage by adopting a double differential amplifier, and processing the signal after the comparison and amplification of the double differential amplifier by adopting a push-pull amplifier to control the base electrode driving current of a power transistor so as to realize low-voltage broadband voltage-stabilizing output. The invention does not adopt an on-chip capacitor to carry out voltage stabilizing loop frequency compensation, but utilizes a double differential amplifier, a push-pull amplifier, a power transistor and a voltage dividing resistor to form a high-speed voltage stabilizing loop, wherein the base series resistor of the power transistor realizes the current balance of the power element package array on one hand, generates a zero point on the other hand, counteracts a secondary pole generated by a larger parasitic capacitance of the base of the power transistor, and the output capacitor adopts a ceramic capacitor to generate an output pole as a loop compensation capacitor to realize voltage stabilizing loop compensation, thereby obviously enhancing the transient response capability of a load.

Description

Low-dropout broadband linear voltage stabilizer with low-voltage input-output characteristics
Technical Field
The invention belongs to the technical field of power management integrated circuits, and relates to a low-voltage-difference broadband linear voltage stabilizer with low-voltage input and output characteristics.
Background
With the continuous development of semiconductor process technology, the process integration level is higher and higher, the linear power supply performance and functions are continuously perfected, the characteristics of low ripple, low noise, simple application and the like are achieved, the method is widely applied to various electronic systems, such as medical equipment, portable electronic products, automotive electronics, civil aviation and the like, the share of a power supply management market is about 20%, and the rapid development of the electronic technology industry is supported.
With the increasing integration level of electronic systems, advanced process technology is rapidly developed, the process feature sizes adopted by system chips and data link chips are smaller and smaller, the working frequency is continuously increased, the working voltage is in a decreasing trend, and the low-voltage output high-speed low-voltage difference linear voltage stabilizer is urgently needed and has larger output current. The output voltage of the main stream product of the current domestic large-current linear voltage stabilizer is more than or equal to 1.5V, the large-current low-dropout linear voltage stabilizer adopts LPNP or PMOS as a power transmission device, but the output impedance of the device is very large, and the change is very large in the output current range of normal application, so that the technical difficulties of loop frequency compensation and stability design of a high-speed linear voltage stabilizer system are continuously increased, the circuit structure is very complex, the area of a loop control circuit chip is large, and the chip cost is difficult to control; the tantalum capacitor is adopted in the voltage-stabilizing loop output capacitor, and the parasitic resistance of the tantalum capacitor is utilized to introduce a zero point so as to realize loop frequency compensation, so that on one hand, the cost of the tantalum capacitor is larger, the occupied PCB area is larger, and on the other hand, the model relation between the zero point and the capacitor is larger, and the tantalum capacitor parasitic resistances of different capacitance values and different manufacturers have larger difference, so that the capacitor is adopted as the output capacitor, and the practical application cost and the stability are difficult to control.
Disclosure of Invention
The invention aims to solve the problem of poor stability of a voltage stabilizing loop caused by large output impedance of a circuit structure and large change in an output current range of normal application in the prior art, and provides a low-voltage difference broadband linear voltage stabilizer with low-voltage input-output characteristics.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
the invention provides a low-voltage difference broadband linear voltage stabilizer with low-voltage input and output characteristics, which comprises a double differential amplifier, a push-pull amplifier, a power transistor base series resistor, a fast path resistor and a power transistor, wherein the double differential amplifier is connected with the push-pull amplifier;
the positive phase of the double-error amplifier is connected with the reference voltage, the negative phase of the double-error amplifier is connected with the voltage signal after the voltage division output by the voltage stabilizer, and the two output ends of the double-error amplifier are respectively connected with the two input ends of the push-pull amplifier; the output end of the push-pull amplifier is connected with one end of the power transistor base electrode series resistor, the other end of the power transistor base electrode series resistor is connected with the power transistor base electrode, one end of the quick path resistor is connected with one end of the power transistor base electrode series resistor, and the other end of the quick path resistor is connected with the V OUT The input voltage of the node, the double error amplifier and the push-pull amplifier is V CNTL Collector junction V of power transistor IN Node, base electrode of power transistor is connected with base electrode series resistor of power transistor, emitter electrode of power transistor is connected with V OUT And (5) a node.
Preferably, the input power supply voltage V of the dual differential amplifier and push-pull amplifying circuit CNTL Input supply voltage V to power transistor IN The following conditions are satisfied: v (V) CNTL -V IN ≥1V。
Preferably, the dual differential amplifier is connected with a bias circuit comprising a transistor Q lp6 Transistor Q n9 And a first resistor r p1 Transistor Q lp6 Emitter junction V CNTL Transistor Q lp6 The base electrode and the collector electrode of the capacitor are connected with the node a2; transistor Q n9 Base node a26 of transistor Q n9 Collector node a2 of transistor Q n9 Emitter connection node a1 of (a); first oneResistor r p1 One end of the node a1 and the other end of the node GND.
Preferably, the dual differential amplifier comprises a radio-follower amplifier, a first differential amplifier and a second differential amplifier.
Preferably, the cascode comprises a transistor Q sp1 Transistor Q lp8 Transistor Q sp2 And transistor Q lp7
Transistor Q sp1 Base node a16, collector node GND, emitter node a3; q (Q) lp8 The base electrode of the transistor is connected with node a2, the collector electrode is connected with node a3, and the emitter electrode is connected with V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q sp2 Base node SENSE, collector node GND, emitter node a8; transistor Q lp7 Base node a2, collector node a8, emitter node V CNTL
Preferably, the first differential amplifier comprises a transistor Q lp11 Transistor Q n12 Transistor Q lp12 Transistor Q n13 Transistor Q n7 Fifth resistor r p5 Second resistor r p2 And a third resistor r p3
Transistor Q lp11 Base node a3, collector node a4, emitter node a10; transistor Q n12 Base node a4, collector node a4, emitter node GND; transistor Q lp12 Base node a8, collector node a7, emitter node a11; transistor Q n13 Base node a4, collector node a7, emitter node GND; transistor Q n7 Base node a7, collector node a7, emitter node a12; fifth resistor r p5 One end of the node a12 is connected with the other end of the node GND; second resistor r p2 One end of the node a9 and the other end of the node a10; third resistor r p3 One end node a9 and the other end node a11.
Preferably, the second differential amplifier comprises a transistor Q lp10 Transistor Q n10 Transistor Q lp9 Transistor Q n11 Transistor Q n8 Fourth electricityResistance r p4 Second resistor r p2 And a third resistor r p3
Transistor Q lp10 Base node a8, collector node a6, emitter node a11; transistor Q n10 Base node a6, collector node a6, emitter node GND; transistor Q lp9 Base node a3, collector node a5, emitter node a10; transistor Q n11 Base node a6, collector node a5, emitter node GND; transistor Q n8 Base node a5, collector node a5, emitter node a13; fourth resistor r p4 One end of the node a13 and the other end of the node GND.
Preferably, the push-pull amplifying circuit includes a transistor Q n6 Transistor Q n4 Transistor Q lp3 Transistor Q lp4 And transistor Q n5
Transistor Q n6 Base node a7, collector node a7, emitter node GND; transistor Q n4 Base node a3, collector node a14, emitter node a17; transistor Q lp3 Base node a14, collector node a14, emitter node V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q lp4 Base node a14, collector node a15, and emitter node V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q n5 Base node a5, collector node a15, and emitter node GND.
Preferably, the current of the output power transistor is small when the linear regulator is in a null load or a light load.
Preferably, the current of the output power transistor is large when the linear regulator is at full load or heavy load.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a low-voltage difference broadband linear voltage stabilizer with low-voltage input and output characteristics, which adopts a double-differential amplifier to monitor the output voltage of the voltage stabilizer, and controls the output current and voltage of a push-pull amplifier after comparing and amplifying the output voltage with a reference voltage, thereby controlling the output voltage of the broadband voltage stabilizer and realizing the function of high-current voltage stabilizing output. The push-pull amplifier dynamically adjusts the output current according to the output current of the voltage stabilizer, and the secondary pole point generated by the base pole of the power transistor is automatically adjusted according to the change of the output pole. The high-speed voltage stabilizing loop is designed by adopting a power supply mode of a double power supply and utilizing the characteristic of low output impedance of a power transistor, and the output capacitor adopts a resistor by adopting a simple compensation method so as to meet the requirement of the stability of the voltage stabilizing loop. Therefore, the linear voltage stabilizer provided by the invention not only can ensure that the stability of a voltage stabilizing loop is good, but also can realize the productization of the linear voltage stabilizer with low voltage difference, broadband and large current, and is suitable for the continuous development requirement of an electronic system.
Further, the input power supply voltage V of the dual differential amplifier and push-pull amplifying circuit CNTL Input supply voltage V to power transistor IN A certain condition is satisfied so as to realize the low-dropout characteristic of the input and output.
Drawings
For a clearer description of the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a block diagram of a low voltage broadband linear voltage regulator of the present invention.
Fig. 2 is a circuit diagram of a low voltage broadband linear voltage regulator transistor stage according to the present invention.
Fig. 3 is a circuit diagram of a typical application of the low-voltage broadband linear voltage stabilizer of the present invention.
The power amplifier comprises a 1000-double differential amplifier, a 2000-push-pull amplifier, a 3000-NPN power transistor base series resistor, a 6000-fast path resistor and a 5000-NPN power transistor.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the embodiments of the present invention, it should be noted that, if the terms "upper," "lower," "horizontal," "inner," and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and does not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Furthermore, the term "horizontal" if present does not mean that the component is required to be absolutely horizontal, but may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the embodiments of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The invention is described in further detail below with reference to the attached drawing figures:
in order to meet the requirement of a modern electronic power supply system on a high-current low-dropout high-speed linear voltage stabilizer, extra electrostatic working current is not consumed, better stability of a voltage stabilizing loop is obtained, the defect that a conventional high-current low-dropout linear voltage stabilizer depends on an equivalent series resistance of an off-chip output filter capacitor and an on-chip compensation capacitor needs a large area is overcome. The positive phase of the double differential amplifier 1000 is connected with 0.8V reference voltage, the negative phase is connected with voltage signal node 1 after voltage division of the output voltage of the voltage stabilizer, and the 2 output ends of the voltage signal node are respectively connected with 2 input ends of the push-pull amplifier 2000, namely node 2 and node 3; the output end of the push-pull amplifier 2000 is connected with the base electrode series resistor R of the power transistor 3 An end node 4 of 3000; base series resistor R of power transistor 3 The other end node 5 of 3000 is connected with the base electrode of NPN power transistor 5000; one end of the fast path resistor 6000 is connected with the node 4, and the other end is connected with the V OUT A node; the input voltages of the dual differential amplifier 1000 and the push-pull amplifier 2000 are V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Collector junction V of NPN power transistor 5000 IN Node, base electrode connected with node 5, emitter electrode connected with V OUT And (5) a node. Input power supply voltage V of dual differential amplifier 1000 and push-pull amplifying circuit 2000 CNTL Input supply voltage V to power transistor 5000 IN The conditions are satisfied: v (V) CNTL -V IN And the voltage is more than or equal to 1V so as to realize the characteristic of low voltage difference of input and output.
As shown in fig. 2, the dual differential amplifier 1000 mainly realizes that the output port voltage of the sampling voltage stabilizer and the reference voltage of 0.8V are compared and amplified, and drives the input port of the push-pull amplifier. The dual differential amplifier is connected with a bias circuit for providing static bias current for the dual differential circuit. The bias circuit includes a transistor Q lp6 Transistor Q n9 And a first resistor r p1 Transistor Q lp6 Emitter junction V CNTL Transistor Q lp6 The base electrode and the collector electrode of the capacitor are connected with the node a2; transistor Q n9 Base node a26 of transistor Q n9 Collector node a2 of transistor Q n9 Emitter connection node a1 of (a); first resistor r p1 One end of the node a1 and the other end of the node GND.
The dual differential amplifier 1000 includes a radial follower amplifier, a first differential amplifier, and a second differential amplifier.
Wherein the radio-follower amplifier is used as an input stage of a double differential amplifier and comprises a transistor Q sp1 Transistor Q lp8 Transistor Q sp2 And transistor Q lp7 The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q sp1 Base node a16, collector node GND, emitter node a3; q (Q) lp8 The base electrode of the transistor is connected with node a2, the collector electrode is connected with node a3, and the emitter electrode is connected with V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q sp2 Base node SENSE, collector node GND, emitter node a8; transistor Q lp7 Base node a2, collector node a8, emitter node V CNTL
The first differential amplifier drives the push-pull amplifier output pull-down transistor Q n6 Comprising a transistor Q lp11 Transistor Q n12 Transistor Q lp12 Transistor Q n13 Transistor Q n7 And a fifth resistor r p5 The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q lp11 Base node a3, collector node a4, emitter node a10; transistor Q n12 Base node a4, collector node a4, emitter node GND; transistor Q lp12 Base node a8, collector node a7, emitter node a11; transistor Q n13 Is connected to the base node a4 of the (c),collector node a7, emitter node GND; transistor Q n7 Base node a7, collector node a7, emitter node a12; fifth resistor r p5 One end of the node a12 is connected with the other end of the node GND; second resistor r p2 One end of the node a9 and the other end of the node a10; third resistor r p3 One end node a9 and the other end node a11.
The second differential amplifier drives the push-pull amplifier output pull-down transistor Q n5 Comprising a transistor Q lp10 Transistor Q n10 Transistor Q lp9 Transistor Q n11 Transistor Q n8 And a fourth resistor r p4 The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q lp10 Base node a8, collector node a6, emitter node a11; transistor Q n10 Base node a6, collector node a6, emitter node GND; transistor Q lp9 Base node a3, collector node a5, emitter node a10; transistor Q n11 Base node a6, collector node a5, emitter node GND; transistor Q n8 Base node a5, collector node a5, emitter node a13; fourth resistor r p4 One end of the node a13 and the other end of the node GND.
As shown in fig. 2, the push-pull amplifier 2000 mainly converts the differential signal output by the dual differential amplifier into a current signal, and provides a driving current for the output power circuit. The push-pull amplifying circuit comprises a transistor Q n6 Transistor Q n4 Transistor Q lp3 Transistor Q lp4 And transistor Q n5 The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q n6 Base node a7, collector node a7, emitter node GND; transistor Q n4 Base node a3, collector node a14, emitter node a17; transistor Q lp3 Base node a14, collector node a14, emitter node V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q lp4 Base node a14, collector node a15, and emitter node V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q n5 Base node a5, collector node a15, and emitter node GND.
The following is a specific application implementation of the linear voltage stabilizer:
the linear voltage stabilizer is realized based on bipolar process design, and a control circuit inputs a power supply V CNTL The voltage is 3V-16V, NPN power transistor inputs power supply V IN The voltage is 1.25V-16V, the output current range is 0.8-3A, the output voltage is 0.8V-15V, the characteristics of low-voltage output and quick load transient response are achieved, and the method can be widely applied to power supply of large-scale digital circuits and systems such as CPU, DSP, MCU and memories.
According to the inventive scheme, a typical application diagram of the circuit is shown in FIG. 3, wherein C IN1 =0.1μF,C IN2 =1μF,C IN3 =0.1μF,C IN4 =10μF,C OUT Ceramic capacitor with 47 mu F, ESR less than 50m, R L1 Is the load of the linear voltage regulator. By configuring R in FIG. 3 under the condition of ensuring the electrical connection characteristics of the linear voltage stabilizer to be correct 1 、R 2 Different proportional relations can realize the output voltage of 0.8V-15V and the output current range of 0-3A.
Test results show that the 3A low-voltage broadband linear voltage stabilizer designed based on the invention controls the input power V of a circuit CNTL The voltage is 3V-16V, NPN power transistor inputs power supply V IN The voltage is 1.25V-16V, the output current range is 0.8-3A, and the output voltage is 0.8V-15V, and the power supply device can be widely applied to power supply of large-scale digital circuits and systems such as CPU, DSP, MCU, memories and the like.
The invention provides a low-voltage difference broadband linear voltage stabilizer with low-voltage input and output characteristics, wherein the positive-phase input end of a double-differential amplifier is connected with 0.8V reference voltage, and the negative-phase input end of the double-differential amplifier is connected with a signal of the voltage output by the voltage stabilizer after resistor voltage division; the input end of the push-pull buffer amplifier is respectively connected with two output ends of the differential amplifier; the power transistor is composed of a plurality of NPN transistor element packages, a resistor is connected in series with the base electrode of each transistor, the input stage of the power module is connected with the output of the push-pull amplifier, and the emitter of the power NPN transistor is an output port of the voltage stabilizer.
An NPN power transistor is used as an output adjusting device, and double power inputs are adopted to realize low voltage difference; a high-speed voltage stabilizing loop is formed by a double differential amplifier, a push-pull amplifier, an NPN transistor and a voltage dividing resistor (output voltage is adjustable, and R1 and R2 voltage dividing resistors are arranged outside a chip); on one hand, the base series resistance of the NPN power transistor realizes current balance of the power element package array, on the other hand, a zero point is generated to offset a secondary pole generated by a larger parasitic capacitance of the base of the NPN power transistor, the output capacitance adopts a ceramic capacitance (the series equivalent resistance is smaller than 50mΩ), an output pole is generated, and the output pole is used as a loop compensation capacitance to realize voltage-stabilizing loop compensation, and the small series equivalent resistance remarkably enhances the transient response capability of a load; the voltage stabilizing structure reduces the chip cost and the application cost, and has the advantages of high current, low voltage difference and high speed.
Specifically, the output voltage of the voltage stabilizer is monitored by adopting a double differential amplifier, and after the output voltage is compared and amplified with a reference voltage, the output current and the output voltage of the push-pull amplifier are controlled, so that the output voltage of the broadband voltage stabilizer is controlled, and the function of high-current voltage-stabilizing output is realized. The push-pull buffer amplifier dynamically adjusts the output current of the push-pull buffer amplifier according to the output current of the voltage stabilizer, and the secondary pole point generated by the base pole of the NPN power tube is automatically adjusted according to the change of the output pole; when the working state of the linear voltage stabilizer is in a null load or a light load, the base electrode of the NPN power transistor needs very small driving current, the BE junction voltage of the NPN transistor of the output stage of the push-pull buffer amplifier is larger, and the current for driving the NPN power transistor is smaller; when the working state of the linear voltage stabilizer is in full load or heavy load, the base electrode of the NPN power transistor needs larger driving current, the BE junction voltage of the NPN transistor of the output stage of the push-pull buffer amplifier is smaller, and the current for driving the NPN power transistor is larger; from no load to full load, the push-pull amplifier automatically adjusts output impedance, realizes secondary pole self-adaptive adjustment, adopts NPN power transistor base series resistor to introduce zero point, counteracts dynamic secondary pole point to complete loop frequency compensation, and realizes stable output voltage of the 3A broadband voltage stabilizer within the load current range of 0A-3A. The input voltage of the control circuit part and the input voltage of the NPN power transistor are respectively V CNTL And V IN ,V CNTL The range is 3V-18V, V IN The range is 1.25V-18V, and the voltage stabilizing loop structure is wideNPN power transistor with characteristic realizes the performance of broadband and low voltage difference.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The low-dropout broadband linear voltage stabilizer with low-voltage input and output characteristics is characterized by comprising a double differential amplifier, a push-pull amplifier, a power transistor base series resistor, a fast path resistor and a power transistor;
the positive phase of the double-error amplifier is connected with the reference voltage, the negative phase of the double-error amplifier is connected with the voltage signal after the voltage division output by the voltage stabilizer, and the two output ends of the double-error amplifier are respectively connected with the two input ends of the push-pull amplifier; the output end of the push-pull amplifier is connected with one end of the power transistor base electrode series resistor, the other end of the power transistor base electrode series resistor is connected with the power transistor base electrode, one end of the quick path resistor is connected with one end of the power transistor base electrode series resistor, and the other end of the quick path resistor is connected with the V OUT The input voltage of the node, the double error amplifier and the push-pull amplifier is V CNTL Collector junction V of power transistor IN Node, base electrode of power transistor is connected with base electrode series resistor of power transistor, emitter electrode of power transistor is connected with V OUT And (5) a node.
2. The low dropout broadband linear regulator having low voltage input/output characteristics according to claim 1, wherein the input power supply voltage V of the dual differential amplifier and push-pull amplifier circuit CNTL Input supply voltage V to power transistor IN The following conditions are satisfied: v (V) CNTL -V IN ≥1V。
3. The low dropout linear regulator having low voltage input/output characteristics according to claim 1, wherein the dual differential amplifier is connected in seriesIs connected with a bias circuit which comprises a transistor Q lp6 Transistor Q n9 And a first resistor r p1 Transistor Q lp6 Emitter junction V CNTL Transistor Q lp6 The base electrode and the collector electrode of the capacitor are connected with the node a2; transistor Q n9 Base node a26 of transistor Q n9 Collector node a2 of transistor Q n9 Emitter connection node a1 of (a); first resistor r p1 One end of the node a1 and the other end of the node GND.
4. The low dropout broadband linear regulator having low voltage input/output characteristics according to claim 3, wherein the dual differential amplifier comprises a radio-dependent amplifier, a first differential amplifier, and a second differential amplifier.
5. The low dropout linear regulator having low voltage input/output characteristics according to claim 4, wherein the radial-dependent amplifier includes a transistor Q sp1 Transistor Q lp8 Transistor Q sp2 And transistor Q lp7
Transistor Q sp1 Base node a16, collector node GND, emitter node a3; q (Q) lp8 The base electrode of the transistor is connected with node a2, the collector electrode is connected with node a3, and the emitter electrode is connected with V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q sp2 Base node SENSE, collector node GND, emitter node a8; transistor Q lp7 Base node a2, collector node a8, emitter node V CNTL
6. The low dropout linear regulator having low voltage input/output characteristics according to claim 4, wherein the first differential amplifier includes a transistor Q lp11 Transistor Q n12 Transistor Q lp12 Transistor Q n13 Transistor Q n7 Fifth resistor r p5 Second resistor r p2 And a third resistor r p3
Transistor Q lp11 The base electrode of (a) is connected with node a3, and the collector electrode is connected withNode a4, emitter connected to node a10; transistor Q n12 Base node a4, collector node a4, emitter node GND; transistor Q lp12 Base node a8, collector node a7, emitter node a11; transistor Q n13 Base node a4, collector node a7, emitter node GND; transistor Q n7 Base node a7, collector node a7, emitter node a12; fifth resistor r p5 One end of the node a12 is connected with the other end of the node GND; second resistor r p2 One end of the node a9 and the other end of the node a10; third resistor r p3 One end node a9 and the other end node a11.
7. The low dropout linear regulator having low voltage input/output characteristics according to claim 6, wherein the second differential amplifier includes a transistor Q lp10 Transistor Q n10 Transistor Q lp9 Transistor Q n11 Transistor Q n8 Fourth resistor r p4 Second resistor r p2 And a third resistor r p3
Transistor Q lp10 Base node a8, collector node a6, emitter node a11; transistor Q n10 Base node a6, collector node a6, emitter node GND; transistor Q lp9 Base node a3, collector node a5, emitter node a10; transistor Q n11 Base node a6, collector node a5, emitter node GND; transistor Q n8 Base node a5, collector node a5, emitter node a13; fourth resistor r p4 One end of the node a13 and the other end of the node GND.
8. The low dropout linear regulator having low voltage input/output characteristics according to claim 7, wherein the push-pull amplifying circuit includes a transistor Q n6 Transistor Q n4 Transistor Q lp3 Transistor Q lp4 And transistor Q n5
Transistor Q n6 Base node a7, collector node a7, emitter node GND; transistor Q n4 Base node a3, collector node a14, emitter node a17; transistor Q lp3 Base node a14, collector node a14, emitter node V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q lp4 Base node a14, collector node a15, and emitter node V CNTL The method comprises the steps of carrying out a first treatment on the surface of the Transistor Q n5 Base node a5, collector node a15, and emitter node GND.
9. The low dropout linear regulator having low voltage input/output characteristics according to claim 1, wherein the current of the output power transistor is small when the linear regulator is under a null load or a light load.
10. The low dropout linear regulator having low voltage input/output characteristics according to claim 1, wherein the current of the output power transistor is large when the linear regulator is at a full load or a heavy load.
CN202310070930.3A 2023-01-28 2023-01-28 Low-dropout broadband linear voltage stabilizer with low-voltage input-output characteristics Pending CN116301151A (en)

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