CN116298743A - System and method for measuring internal temperature distribution of power semiconductor device - Google Patents
System and method for measuring internal temperature distribution of power semiconductor device Download PDFInfo
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Abstract
The invention discloses a system and a method for measuring internal temperature distribution of a power semiconductor device, relates to the technical field of semiconductor devices, and aims to solve the problem of internal temperature measurement of the device. According to the system and the method for measuring the internal temperature distribution of the power semiconductor device, the thermal resistance temperature measuring unit, the thermocouple temperature measuring unit, the thermal radiation temperature measuring unit and the infrared temperature measuring unit can accurately measure the internal temperature of the power semiconductor device, the semiconductor in a region is subjected to temperature acquisition by four different temperature measuring methods, so that acquired data are more comprehensive, the temperature calculating module divides digital signal data into the same region, in the region, the temperature data measured in different modes are subjected to average value calculation, and finally average temperature values distributed in different regions in the device are obtained and are sent to a PC terminal through the alarm module for display, and the alarm force is larger when the threshold value is larger and smaller when the threshold value is smaller.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a system and a method for measuring internal temperature distribution of a power semiconductor device.
Background
The SGT MOSFE is a novel power semiconductor device, has the advantage of low conduction loss of the traditional deep trench MOSFE, and simultaneously has lower switching loss. The following problems also exist in the temperature measurement inside existing SGT power devices:
1. when the internal temperature of the SGT power device is collected, only one collecting mode is adopted, so that the data is too single in temperature distribution measurement;
2. after the internal temperature of the SGT power device is acquired, submitting temperature data without finer processing, so that later-stage data and measured temperature are wrong;
3. the temperature of different areas in the SGT power device is measured, temperature data are provided after measurement, and abnormal data cannot be prompted, so that the device damage is caused by abnormal temperature in the SGT power device.
Disclosure of Invention
The invention aims to provide a system and a method for measuring the internal temperature distribution of a power semiconductor device, wherein a thermal resistance temperature measuring unit, a thermocouple temperature measuring unit, a thermal radiation temperature measuring unit and an infrared temperature measuring unit can accurately measure the internal temperature of the power semiconductor device, a temperature calculating module divides digital signal data into the same area, in the area, the temperature data measured in different modes are calculated to obtain average temperature values distributed in different areas in the device, the average temperature values are transmitted to a PC terminal through an alarm module through the size of a threshold value, the larger the threshold value is, the smaller the alarm force is, and the smaller the threshold value is, so that the problem in the prior art can be solved.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the system comprises a temperature acquisition terminal, a temperature processing server and a monitoring terminal, wherein the temperature acquisition terminal transmits acquired data to the temperature processing server, and the temperature processing server transmits processed data to the monitoring terminal;
the temperature acquisition terminal is used for acquiring the temperatures of different areas in the device through different temperature measurement methods;
the temperature processing server calculates and processes a plurality of groups of temperature data acquired in the area based on the temperature acquisition terminal;
the monitoring terminal carries out comparison detection on the processed temperature data based on the temperature processing server and screens abnormal temperature data at the position;
the temperature acquisition terminal comprises a contact type temperature measurement system and a non-contact type temperature measurement system;
the contact temperature measurement system is used for contacting different areas of the device by using the temperature measurement element;
the non-contact temperature measuring system is used for measuring temperature of the device by using the thermometer light device, and the thermometer light device does not need to be in contact with the device.
Preferably, the temperature acquisition terminal further comprises a measured temperature receiving module and a type of storage module;
The measured temperature receiving module is used for receiving a plurality of groups of collected temperature data based on the contact temperature measuring system and the non-contact temperature measuring system, and carrying out regional arrangement on the data;
the storage module stores the sorted data based on the measured temperature receiving module.
Preferably, the contact type temperature measuring system comprises a thermal resistance temperature measuring unit and a thermocouple temperature measuring unit;
the thermal resistance temperature measuring unit is used for measuring the temperature of the device according to a temperature detecting element with the resistance value changing along with the temperature;
the thermocouple temperature measuring unit is used for measuring the temperature by utilizing the thermal electromotive force between two groups of material conductors with different components.
Preferably, the non-contact temperature measurement system comprises a thermal radiation temperature measurement unit and an infrared temperature measurement unit;
the heat radiation temperature measuring unit measures the temperature change by using the radiation energy of the device;
the infrared temperature measuring unit is used for converting energy of infrared rays emitted by the device into electric signals and measuring the temperature of the device according to the size of the electric signals.
Preferably, the infrared temperature measuring unit comprises a single-color temperature measuring module and a multi-color temperature measuring module;
the single-color temperature measurement module measures the temperature through radiation energy generated in a certain narrow wavelength range in a certain area of the device;
The multicolor temperature measuring module calculates the device temperature according to the radiation energy of the device for measuring two similar wave bands and the radiation energy ratio of the object for measuring the radiation energy of the two similar wave bands.
Preferably, the temperature processing server comprises a temperature data receiving module, an AD conversion module, a flow receiving control module, a temperature calculation module and a numerical value storage module;
the temperature data receiving module receives the acquired temperature data based on the temperature acquisition terminal;
the AD conversion module converts received data from analog signal data to digital signal data based on the temperature data receiving module;
the flow receiving control module receives the digital signal data based on the AD conversion module and manages the flow when receiving the digital signal data;
the temperature calculation module calculates an average value of the received data based on the flow receiving control module;
and the numerical value storage module is used for storing the obtained average value based on the temperature calculation module.
Preferably, the monitoring terminal comprises a numerical value receiving module, a numerical value screening module, an abnormal data receiving module, a data classifying module and an alarm module;
the numerical value receiving module receives the data of the average value based on the temperature processing server;
The numerical screening module compares the data with the normal average value with the received real-time data based on the numerical receiving module, and calculates the data during the comparison;
the abnormal data receiving module is used for uniformly receiving the data with the calculated numerical value not in the normal average value based on the numerical value screening module;
the data classification module classifies the difference value of the average value data based on the abnormal data receiving module, and can be divided into a first threshold value, a second threshold value, a fifth threshold value and a sixth threshold value, wherein the first threshold value is the threshold value with the largest difference value, and the sixth threshold value is the threshold value with the smallest difference value;
the alarm module alarms the difference value of the abnormal average value data based on the data classification module, and the greater the difference value is, the stronger the alarm force is.
Preferably, the temperature processing server is further configured to evaluate the temperature analog signal collected by the temperature collecting terminal to determine whether the temperature analog signal meets a standard, specifically:
selecting a proper frequency domain based on the signal frequency of the temperature analog signal;
inputting the temperature analog signal into the input frequency domain to obtain a high-precision estimation result corresponding to the temperature analog signal;
Confirming whether the high-precision estimation result accords with a heating rule in the device, if so, confirming that the temperature analog signal preliminarily accords with the standard, and if not, confirming that the temperature analog signal does not accord with the standard;
after confirming that the temperature analog signal preliminarily accords with the standard, dividing the temperature analog signal into a plurality of signal frames;
carrying out singular spectrum decomposition on each signal frame to obtain a singular spectrum component corresponding to the signal frame;
calculating sample entropy of singular spectrum components corresponding to each signal frame;
detecting characteristic points of each signal frame according to sample entropy of singular spectrum components corresponding to each signal frame, and obtaining a detection result;
confirming a temperature characteristic related parameter corresponding to each signal frame according to the detection result;
arranging and combining the temperature characteristic related parameters corresponding to each signal frame to obtain a temperature characteristic related parameter set corresponding to the temperature analog signal;
acquiring a feature vector corresponding to the temperature feature related parameter set;
constructing a model by utilizing the feature vector to obtain a temperature parameter estimation model;
carrying out temperature parameter tracking on the temperature simulation signal by using the temperature parameter estimation model to obtain a tracking result;
Confirming a correlation index of temperature parameters in the temperature analog signal according to the tracking result;
screening out a temperature parameter related signal value in the temperature analog signal based on the correlation index;
determining the time sequence change condition of the temperature parameter related signal value, and judging the stability of the temperature parameter related signal value according to the time sequence change condition;
and confirming whether the stability is greater than or equal to a preset threshold, if so, confirming that the temperature analog signal further meets the standard, otherwise, confirming that the temperature analog signal does not meet the standard.
Preferably, the installation position of the temperature measuring element of the contact temperature measuring system in the detection area is determined by the following method:
dividing the detection area of each temperature measuring element into a plurality of subareas with equal areas;
detecting thickness and density parameters of the inner wall of the semiconductor device corresponding to each sub-region;
determining the heat release coefficient and the heat absorption coefficient of each subregion according to the thickness and the density parameters of the inner wall of the semiconductor inner device corresponding to the subregion;
determining a temperature difference between a first temperature of the inner wall of the power semiconductor device and a second temperature of a vacuum space inside the device when the power semiconductor device works according to a preset test result;
Determining the maximum endothermic temperature of each subarea according to the density parameter of the subarea, and calculating the space temperature of the vacuum space in the device at the lowest endothermic temperature based on the maximum endothermic temperature and the temperature difference;
calculating the heat emissivity of each sub-area of each temperature measuring element according to the parameters:
wherein F is ij The emissivity of heat, T, expressed as the j-th sub-region of the i-th temperature sensing element ij1 Expressed as the maximum endothermic temperature, T, of the jth sub-region of the ith temperature measuring element ij2 Expressed as the spatial temperature of the vacuum space inside the device at the maximum endothermic temperature of the jth sub-region of the ith temperature measuring element, delta expressed as the Stefan Boltzmann constant, s ij The distance between the jth sub-area expressed as the ith temperature measuring element and the heating source of the power semiconductor device, A ij The heat release coefficient of the jth sub-region, denoted as ith temperature sensing element, B ij The coefficient of heat absorption, ln, expressed as natural logarithm, μ, expressed as the j-th sub-region of the i-th temperature sensing element ij The space utilization rate of the jth sub-region expressed as the ith temperature measuring element in the internal space of the power semiconductor device;
acquiring physical parameters of each temperature measuring element, and determining the sensitivity of the temperature measuring element in each temperature range according to the physical parameters;
Calculating the maximum radiant heat of each subarea according to the heat radiation rate of each subarea and the maximum endothermic temperature of the subarea;
determining the target sensitivity of each temperature measuring element in each sub-area according to the maximum radiation heat of each temperature measuring element to each sub-area corresponding to the temperature measuring element;
calculating the working performance index of each temperature measuring element in each sub-area according to the target sensitivity of each temperature measuring element in each sub-area:
wherein Q is ij Representation ofFor the index of the operational performance of the ith temperature measuring element in the jth sub-zone, D ij The target sensitivity of the ith temperature measuring element in the jth sub-area is expressed as a natural constant, the value of e is 2.72, and B i Represented as the endothermic coefficient, θ, of the ith temperature measuring element ij Index of thermal resistance of the ith temperature measuring element at maximum radiant heat of the jth sub-area, M ij The maximum radiant heat quantity expressed as the jth sub-area is 0.2,0.4 for the temperature detection interference factor of the ith temperature measuring element]；
Selecting a target subarea with the maximum working performance index of each temperature measuring element as an installation area of the temperature measuring element;
the mounting position of each temperature measuring element is determined according to the volume of the temperature measuring element and the area of the mounting area of the temperature measuring element.
The invention provides another technical scheme, a method for measuring the internal temperature distribution of a power semiconductor device, which comprises the following steps:
the first step: firstly, carrying out temperature measurement treatment in different modes on the positions of different areas in the semiconductor device through a temperature acquisition terminal;
and a second step of: after the temperature is measured in the semiconductor device, calculating the temperature values measured in different modes through a temperature processing server, and obtaining an average value of the temperatures acquired in an area without modes;
and a third step of: and carrying out abnormality investigation on the obtained average value through the monitoring terminal, and carrying out alarm processing according to the data difference after the investigation.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a system and a method for measuring the internal temperature distribution of a power semiconductor device, wherein a thermal resistance temperature measuring unit measures temperature by utilizing the temperature change of a resistance value of a conductor or a semiconductor, can remotely transmit an electric signal, has high sensitivity and strong stability, improves interchangeability and accuracy, a thermocouple temperature measuring unit connects two different conductors or semiconductors to form a closed loop after connection, when the temperatures at two junctions are different, thermoelectric potential is generated in the loop, at the moment, the temperature measuring element and a device perform full heat exchange, finally, the thermal balance is achieved, the measured temperature value of the device can be obtained through the magnitude of the physical parameter of the temperature sensing element, the thermal radiation temperature measuring unit mainly adopts a thermal radiation temperature measuring unit and an infrared temperature measuring unit to measure the measured temperature value of the device, the radiation energy of infrared rays emitted by an object is converted into an electric signal, the radiation energy of the infrared rays corresponds to the temperature of the object, the temperature of the object can be determined according to the converted into the electric signal, a monochromatic module collects the radiation energy generated in a certain narrow wavelength range in the inside the power semiconductor device, then the temperature of the object is measured through the outside, the temperature measuring element is measured through the outside, the temperature of the temperature measuring element is measured through the temperature of the temperature measuring module is more than the semiconductor device in the same area, the two temperature of the semiconductor device is measured through the two temperature of the same wavelength ranges, and the temperature of the two temperature measuring areas are more similar to each other, and the two temperature wave bands are collected by the method is more similar to the temperature in the temperature region of the semiconductor device.
2. The invention provides a system and a method for measuring the internal temperature distribution of a power semiconductor device, wherein an AD conversion module can convert received analog signal data into digital signal data, so that the data calculation of the later temperature measurement is more accurate, the situation of calculation errors is reduced, meanwhile, when the flow receiving control module receives the converted digital signal data, the flow control can be carried out on the received digital signal data, the possibility of flow explosion during data receiving is reduced, the temperature calculation module divides the digital signal data into the same areas, and the temperature data measured in different modes are subjected to average value calculation in the areas, so that the average temperature value of the distribution in different areas in the device is finally obtained.
3. The invention provides a system and a method for measuring the internal temperature distribution of a power semiconductor device, wherein a numerical screening module compares data of an average temperature value with average value data in a qualified range, an abnormal data receiving module receives data of the average temperature value, of which the data is higher or lower than a normal value, a data classifying module classifies the compared average temperature value data into different first threshold values and second threshold values.
Drawings
FIG. 1 is a schematic overall flow chart of the present invention;
FIG. 2 is a schematic diagram of a temperature acquisition terminal module according to the present invention;
FIG. 3 is a schematic diagram of a contact temperature measurement system module according to the present invention;
FIG. 4 is a schematic diagram of a non-contact temperature measurement system module according to the present invention;
FIG. 5 is a schematic diagram of a temperature processing server module according to the present invention;
fig. 6 is a schematic diagram of a monitor terminal module according to the present invention.
In the figure: 1. a temperature acquisition terminal; 11. a contact temperature measurement system; 111. a thermal resistance temperature measuring unit; 112. a thermocouple temperature measuring unit; 12. a non-contact temperature measurement system; 121. a heat radiation temperature measurement unit; 122. an infrared temperature measurement unit; 1221. a monochromatic temperature measurement module; 1222. a multicolor temperature measurement module; 13. a measured temperature receiving module; 14. a class of storage modules; 2. a temperature processing server; 21. a temperature data receiving module; 22. an AD conversion module; 23. a flow receiving control module; 24. a temperature calculation module; 25. a numerical value storage module; 3. a monitoring terminal; 31. a numerical value receiving module; 32. a numerical value screening module; 33. an abnormal data receiving module; 34. a data classification module; 35. an alarm module.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the problem that in the prior art, only one temperature measurement and acquisition mode is adopted, so that the data is too single in temperature distribution measurement, referring to fig. 1-4, the present embodiment provides the following technical scheme:
the system comprises a temperature acquisition terminal 1, a temperature processing server 2 and a monitoring terminal 3, wherein the temperature acquisition terminal 1 transmits acquired data to the temperature processing server 2, and the temperature processing server 2 transmits processed data to the monitoring terminal 3; the temperature acquisition terminal 1 is used for acquiring the temperatures of different areas in the device through different temperature measurement methods; the temperature processing server 2 calculates and processes a plurality of groups of temperature data acquired in the area based on the temperature acquisition terminal 1; the monitoring terminal 3 carries out comparison detection on the processed temperature data based on the temperature processing server 2 and screens abnormal temperature data at the position; the temperature acquisition terminal 1 comprises a contact temperature measurement system 11 and a non-contact temperature measurement system 12; the contact temperature measuring system 11 is used for contacting different areas of the device by using a temperature measuring element; the non-contact thermometry system 12 is used to measure the temperature of the device using a thermometer light and the thermometer light does not have to be in contact with the device.
The temperature acquisition terminal 1 further comprises a measured temperature receiving module 13 and a type of storage module 14; the measured temperature receiving module 13 receives the collected multiple groups of temperature data based on the contact temperature measuring system 11 and the non-contact temperature measuring system 12, and performs regional arrangement on the data; the storage module 14 stores the sorted data based on the measured temperature receiving module 13, and the contact temperature measuring system 11 comprises a thermal resistance temperature measuring unit 111 and a thermocouple temperature measuring unit 112; the thermal resistance temperature measuring unit 111 is used for measuring the temperature of the device according to a temperature detecting element with the resistance value changing along with the temperature; the thermocouple temperature measuring unit 112 is used for measuring temperature by utilizing thermal electromotive force between two groups of material conductors with different components.
The non-contact temperature measurement system 12 includes a heat radiation temperature measurement unit 121 and an infrared temperature measurement unit 122; the heat radiation temperature measurement unit 121 measures a change in temperature thereof using radiant energy of the device; the infrared temperature measurement unit 122 is configured to perform energy conversion on infrared rays emitted by the device, convert the infrared rays into an electrical signal, and measure the temperature of the device according to the magnitude of the electrical signal, where the infrared temperature measurement unit 122 includes a single-color temperature measurement module 1221 and a multi-color temperature measurement module 1222; the single color thermometry module 1221 measures the magnitude of temperature by radiant energy occurring within a narrow wavelength range in a region of the device; the polychromatic temperature measurement module 1222 calculates the device temperature from the ratio of the two near band object radiant energies based on measuring the two near band device radiant energies.
Specifically, the temperature inside the power semiconductor device is measured by the temperature acquisition terminal 1, the temperature is measured mainly by the contact type temperature measuring system 11 and the non-contact type temperature measuring system 12, the contact type temperature measuring system 11 mainly adopts the thermal resistance temperature measuring unit 111 and the thermocouple temperature measuring unit 112 for measurement, the thermal resistance temperature measuring unit 111 measures the temperature by utilizing the change of the resistance value temperature of a conductor or a semiconductor, and can remotely transmit an electric signal, and has high sensitivity, strong stability, improved interchangeability and accuracy, the thermocouple temperature measuring unit 112 connects two different conductors or semiconductors, forms a closed loop after connection, when the temperature at the two joints is different, thermoelectric potential is generated in the loop, and at the moment, the temperature measuring element and the device perform sufficient heat exchange, and finally, the heat balance is achieved, the measured temperature value of the device can be obtained through the magnitude of the physical parameter of the temperature sensing element, the non-contact temperature measuring system 12 mainly adopts the thermal radiation temperature measuring unit 121 and the infrared temperature measuring unit 122 to measure, the thermal radiation temperature measuring unit 121 converts the radiation energy of the infrared rays emitted by the object into an electric signal, the magnitude of the infrared radiation energy corresponds to the temperature of the object, according to the converted electric signal, the temperature of the object can be determined, the monochromatic temperature measurement module 1221 collects radiation energy generated in a certain narrow wavelength range in a certain area inside the power semiconductor device, then the temperature is measured by an external instrument, the polychromatic temperature measurement module 1222 collects device radiation energy of two similar wave bands in the same area inside the power semiconductor device, and then the device temperature is calculated by the ratio of the two radiation energies of the object of similar wave bands.
In order to solve the problem that in the prior art, after temperature measurement is completed, temperature data is submitted without finer processing, resulting in error between later data and measured temperature, please refer to fig. 5, the following technical scheme is provided:
the temperature processing server 2 comprises a temperature data receiving module 21, an AD conversion module 22, a flow receiving control module 23, a temperature calculation module 24 and a numerical storage module 25; the temperature data receiving module 21 receives the collected temperature data based on the temperature collection terminal 1; the AD conversion module 22 converts the received data from analog signal data to digital signal data based on the temperature data reception module 21; the flow rate reception control module 23 receives the digital signal data based on the AD conversion module 22, and performs flow rate management on it at the time of reception; the temperature calculation module 24 performs calculation of an average value on the received data based on the flow rate reception control module 23; the value storage module 25 saves the obtained average value based on the temperature calculation module 24.
Specifically, the AD conversion module 22 converts the received analog signal data into digital signal data, so that the data calculation of the later temperature measurement is more accurate, the calculation error is reduced, meanwhile, when the flow receiving control module 23 receives the converted digital signal data, the flow control can be performed on the received digital signal data, the possibility of flow explosion during data receiving is reduced, the temperature calculation module 24 divides the digital signal data into the same areas, and in the areas, the average value calculation is performed on the temperature data measured in different manners, so as to finally obtain the average temperature values distributed in different areas inside the device.
In order to solve the problem that in the prior art, only the temperatures of different areas inside the power semiconductor device are measured, temperature data are provided after measurement, and abnormal data cannot be prompted, so that the damage of the device is caused by the abnormal temperature inside the power semiconductor device, please refer to fig. 6, and the following technical scheme is provided:
the monitoring terminal 3 comprises a numerical value receiving module 31, a numerical value screening module 32, an abnormal data receiving module 33, a data classifying module 34 and an alarm module 35; the value receiving module 31 receives the data of the average value based on the temperature processing server 2; the numerical screening module 32 compares the data stored with the normal average value with the received real-time data based on the numerical receiving module 31, and calculates the data when compared; the abnormal data receiving module 33 uniformly receives the data with the calculated value not in the normal average value based on the value screening module 32; the data classification module 34 classifies the magnitude of the difference value of the average value data based on the abnormal data receiving module 33, and may be classified into a first threshold value, which is the threshold value with the largest difference value, a second threshold value. The alarm module 35 alarms the difference value of the abnormal average value data based on the data classification module 34, and the greater the difference value, the stronger the alarm force.
Specifically, the data of the average temperature value is compared with the average value data in the qualified range by the numerical screening module 32, the abnormal data receiving module 33 receives the data of the average temperature value with the data higher or lower than the normal value after the comparison, the data classifying module 34 classifies the compared average temperature value data into different first threshold values, second threshold values.
Specifically, the temperature processing server 2 is further configured to evaluate the temperature analog signal collected by the temperature collecting terminal 1 to determine whether the temperature analog signal meets the standard, specifically:
selecting a proper frequency domain based on the signal frequency of the temperature analog signal;
inputting the temperature analog signal into the input frequency domain to obtain a high-precision estimation result corresponding to the temperature analog signal;
confirming whether the high-precision estimation result accords with a heating rule in the device, if so, confirming that the temperature analog signal preliminarily accords with the standard, and if not, confirming that the temperature analog signal does not accord with the standard;
After confirming that the temperature analog signal preliminarily accords with the standard, dividing the temperature analog signal into a plurality of signal frames;
carrying out singular spectrum decomposition on each signal frame to obtain a singular spectrum component corresponding to the signal frame;
calculating sample entropy of singular spectrum components corresponding to each signal frame;
detecting characteristic points of each signal frame according to sample entropy of singular spectrum components corresponding to each signal frame, and obtaining a detection result;
confirming a temperature characteristic related parameter corresponding to each signal frame according to the detection result;
arranging and combining the temperature characteristic related parameters corresponding to each signal frame to obtain a temperature characteristic related parameter set corresponding to the temperature analog signal;
acquiring a feature vector corresponding to the temperature feature related parameter set;
constructing a model by utilizing the feature vector to obtain a temperature parameter estimation model;
carrying out temperature parameter tracking on the temperature simulation signal by using the temperature parameter estimation model to obtain a tracking result;
confirming a correlation index of temperature parameters in the temperature analog signal according to the tracking result;
screening out a temperature parameter related signal value in the temperature analog signal based on the correlation index;
determining the time sequence change condition of the temperature parameter related signal value, and judging the stability of the temperature parameter related signal value according to the time sequence change condition;
And confirming whether the stability is greater than or equal to a preset threshold, if so, confirming that the temperature analog signal further meets the standard, otherwise, confirming that the temperature analog signal does not meet the standard.
In this embodiment, the high-precision estimation result is expressed as a high-precision temperature estimation value corresponding to the temperature analog signal;
in the embodiment, the heating law inside the device is expressed as a temperature fluctuation interval law within the normal working parameter range of the device;
in the present embodiment, performing feature point detection on each signal frame is represented as detecting a signal feature parameter of each signal frame;
in this embodiment, the correlation index is expressed as a ratio of characteristic parameters related to the temperature parameter among the signal characteristic parameters in the temperature analog signal;
the working principle of the technical scheme is as follows: firstly, determining whether a high-precision evaluation value of a temperature analog signal accords with a heating rule in a device or not through judging whether the high-precision evaluation value is in a temperature fluctuation range in a normal working parameter range of the device or not, further determining whether the temperature analog signal accords with a standard or not, after confirming that the temperature analog signal preliminarily accords with the standard, constructing a temperature parameter estimation model through dividing the temperature analog signal into a plurality of signal frames and then processing each signal frame to extract a temperature characteristic related parameter corresponding to each signal frame, calculating a temperature parameter related signal value in each signal frame through the temperature parameter estimation model, judging whether the frame signal is a useful signal or not through the temperature parameter estimation model, then determining a time sequence change condition of the temperature parameter related signal in the temperature analog signal according to a change condition of the temperature parameter related signal values in two adjacent frames, and judging stability of the temperature parameter related signal values according to the time sequence change condition of the temperature parameter related signal, thereby evaluating whether the temperature analog signal further accords with the standard or not.
The beneficial effects of the technical scheme are as follows: the dual standard judgment is carried out on the temperature analog signals, so that whether the temperature analog signals meet the standard or not can be accurately and objectively estimated from the multi-angle of the data form and the signal composition form of the temperature analog signals, the judgment accuracy and stability are improved, and further, whether the temperature analog signals meet the standard or not can be further judged from the intermittence of the carried signal values of the temperature analog signals through the stability of the temperature parameter related signal values in the temperature analog signals, and the judgment accuracy and objectivity are further improved.
Specifically, the installation position of the temperature measuring element of the contact temperature measuring system 11 in the detection area is determined by the following method:
dividing the detection area of each temperature measuring element into a plurality of subareas with equal areas;
detecting thickness and density parameters of the inner wall of the semiconductor device corresponding to each sub-region;
determining the heat release coefficient and the heat absorption coefficient of each subregion according to the thickness and the density parameters of the inner wall of the semiconductor inner device corresponding to the subregion;
determining a temperature difference between a first temperature of the inner wall of the power semiconductor device and a second temperature of a vacuum space inside the device when the power semiconductor device works according to a preset test result;
Determining the maximum endothermic temperature of each subarea according to the density parameter of the subarea, and calculating the space temperature of the vacuum space in the device at the lowest endothermic temperature based on the maximum endothermic temperature and the temperature difference;
calculating the heat emissivity of each sub-area of each temperature measuring element according to the parameters:
wherein F is ij The emissivity of heat, T, expressed as the j-th sub-region of the i-th temperature sensing element ij1 Expressed as the maximum endothermic temperature, T, of the jth sub-region of the ith temperature measuring element ij2 Expressed as the spatial temperature of the vacuum space inside the device at the maximum endothermic temperature of the jth sub-region of the ith temperature measuring element, delta expressed as the Stefan Boltzmann constant, s ij Expressed as the distance between the jth sub-area of the ith temperature measuring element and the heating source of the power semiconductor device,A ij the heat release coefficient of the jth sub-region, denoted as ith temperature sensing element, B ij The coefficient of heat absorption, ln, expressed as natural logarithm, μ, expressed as the j-th sub-region of the i-th temperature sensing element ij The space utilization rate of the jth sub-region expressed as the ith temperature measuring element in the internal space of the power semiconductor device;
acquiring physical parameters of each temperature measuring element, and determining the sensitivity of the temperature measuring element in each temperature range according to the physical parameters;
Calculating the maximum radiant heat of each subarea according to the heat radiation rate of each subarea and the maximum endothermic temperature of the subarea;
determining the target sensitivity of each temperature measuring element in each sub-area according to the maximum radiation heat of each temperature measuring element to each sub-area corresponding to the temperature measuring element;
calculating the working performance index of each temperature measuring element in each sub-area according to the target sensitivity of each temperature measuring element in each sub-area:
wherein Q is ij Expressed as the index of the performance of the ith temperature measuring element in the jth sub-zone, D ij The target sensitivity of the ith temperature measuring element in the jth sub-area is expressed as a natural constant, the value of e is 2.72, and B i Represented as the endothermic coefficient, θ, of the ith temperature measuring element ij The index of the thermal resistance of the ith temperature measuring element under the maximum radiation heat of the jth sub-area, the heat absorption coefficient and the index of the thermal resistance are both physical parameters of the temperature measuring element, M ij The maximum radiant heat quantity expressed as the jth sub-area is 0.2,0.4 for the temperature detection interference factor of the ith temperature measuring element]；
Selecting a target subarea with the maximum working performance index of each temperature measuring element as an installation area of the temperature measuring element;
The mounting position of each temperature measuring element is determined according to the volume of the temperature measuring element and the area of the mounting area of the temperature measuring element.
The beneficial effects of the technical scheme are as follows: the heat radiation rate of each sub-area of each temperature measuring element can be calculated to effectively evaluate the heat feedback degree of each sub-area of each temperature measuring element so as to rapidly determine the feedback heat of each sub-area, thereby laying a condition for subsequent installation area judgment, improving the practicability.
A method for measuring an internal temperature profile of a power semiconductor device, comprising the steps of:
the first step: firstly, carrying out temperature measurement treatment in different modes on the positions of different areas in a semiconductor device through a temperature acquisition terminal 1;
and a second step of: after the temperature is measured in the semiconductor device, calculating the temperature values measured in different modes through a temperature processing server 2, and obtaining an average value of the temperatures acquired in an area without modes;
And a third step of: the monitoring terminal 3 is used for carrying out abnormal investigation on the obtained average value, and alarm processing is carried out according to the data difference after the investigation.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The internal temperature distribution measurement system of the power semiconductor device comprises a temperature acquisition terminal (1), a temperature processing server (2) and a monitoring terminal (3), wherein the temperature acquisition terminal (1) transmits acquired data to the temperature processing server (2), and the temperature processing server (2) transmits processed data to the monitoring terminal (3);
the temperature acquisition terminal (1) is used for acquiring the temperatures of different areas in the device through different temperature measurement methods;
the temperature processing server (2) calculates and processes a plurality of groups of temperature data acquired in the area based on the temperature acquisition terminal (1);
the monitoring terminal (3) is used for comparing and detecting the processed temperature data based on the temperature processing server (2) and screening abnormal temperature data at the position;
the temperature acquisition terminal (1) comprises a contact type temperature measurement system (11) and a non-contact type temperature measurement system (12);
the contact temperature measuring system (11) is used for contacting different areas of the device by using a temperature measuring element;
the non-contact temperature measurement system (12) is used for measuring temperature of the device by using a thermometer light device, and the thermometer light device is not contacted with the device.
2. The power semiconductor device internal temperature distribution measurement system according to claim 1, wherein: the temperature acquisition terminal (1) further comprises a measured temperature receiving module (13) and a type of storage module (14);
The measured temperature receiving module (13) receives the collected multiple groups of temperature data based on the contact temperature measuring system (11) and the non-contact temperature measuring system (12), and performs regional arrangement on the data;
the storage module (14) stores the sorted data based on the measured temperature receiving module (13).
3. The power semiconductor device internal temperature distribution measurement system according to claim 1, wherein: the contact type temperature measuring system (11) comprises a thermal resistance temperature measuring unit (111) and a thermocouple temperature measuring unit (112);
the thermal resistance temperature measuring unit (111) is used for measuring the temperature of the device according to a temperature detecting element with the resistance value changing along with the temperature;
the thermocouple temperature measuring unit (112) is used for measuring temperature by utilizing thermoelectromotive force between two groups of material conductors with different components.
4. The power semiconductor device internal temperature distribution measurement system according to claim 1, wherein: the non-contact temperature measurement system (12) comprises a thermal radiation temperature measurement unit (121) and an infrared temperature measurement unit (122);
the thermal radiation temperature measuring unit (121) measures the change of the temperature of the device by using the radiation energy of the device;
the infrared temperature measuring unit (122) is used for converting energy of infrared rays emitted by the device into electric signals and measuring the temperature of the device according to the electric signals.
5. The power semiconductor device internal temperature distribution measurement system according to claim 4, wherein: the infrared temperature measurement unit (122) comprises a single-color temperature measurement module (1221) and a multi-color temperature measurement module (1222);
the single-color temperature measurement module (1221) measures the magnitude of temperature through radiant energy occurring within a narrow wavelength range in a region of the device;
the polychromatic temperature measurement module (1222) calculates the device temperature according to the device radiation energy of two similar wave bands and the ratio of the object radiation energy of two similar wave bands.
6. The power semiconductor device internal temperature distribution measurement system according to claim 1, wherein: the temperature processing server (2) comprises a temperature data receiving module (21), an AD conversion module (22), a flow receiving control module (23), a temperature calculating module (24) and a numerical storage module (25);
the temperature data receiving module (21) receives the acquired temperature data based on the temperature acquisition terminal (1);
the AD conversion module (22) converts the received data from analog signal data to digital signal data based on the temperature data receiving module (21);
the flow receiving control module (23) receives the digital signal data based on the AD conversion module (22) and manages the flow when receiving;
The temperature calculation module (24) calculates an average value of the received data based on the flow receiving control module (23);
the numerical value storage module (25) stores the obtained average value in data based on the temperature calculation module (24).
7. The power semiconductor device internal temperature distribution measurement system according to claim 1, wherein: the monitoring terminal (3) comprises a numerical value receiving module (31), a numerical value screening module (32), an abnormal data receiving module (33), a data classifying module (34) and an alarm module (35);
the numerical value receiving module (31) receives the data of the average value based on the temperature processing server (2);
the numerical screening module (32) compares the data stored with the normal average value with the received real-time data based on the numerical receiving module (31), and calculates the data when the data are compared;
the abnormal data receiving module (33) uniformly receives the data with the calculated numerical value not in the normal average value based on the numerical value screening module (32);
the data classification module (34) classifies the magnitude of the difference value of the average value data based on the abnormal data receiving module (33), and can be divided into a first threshold value, a second threshold value, a fifth threshold value and a sixth threshold value, wherein the first threshold value is the threshold value with the largest difference value, and the sixth threshold value is the threshold value with the smallest difference value;
The alarm module (35) alarms the difference value of the abnormal average value data based on the data classification module (34).
8. The power semiconductor device internal temperature distribution measurement system according to claim 1, wherein: the temperature processing server (2) is also used for evaluating the temperature analog signals acquired by the temperature acquisition terminal (1) to determine whether the temperature analog signals accord with the standard or not, and specifically comprises the following steps:
selecting a proper frequency domain based on the signal frequency of the temperature analog signal;
inputting the temperature analog signal into the input frequency domain to obtain a high-precision estimation result corresponding to the temperature analog signal;
confirming whether the high-precision estimation result accords with a heating rule in the device, if so, confirming that the temperature analog signal preliminarily accords with the standard, and if not, confirming that the temperature analog signal does not accord with the standard;
after confirming that the temperature analog signal preliminarily accords with the standard, dividing the temperature analog signal into a plurality of signal frames;
carrying out singular spectrum decomposition on each signal frame to obtain a singular spectrum component corresponding to the signal frame;
calculating sample entropy of singular spectrum components corresponding to each signal frame;
detecting characteristic points of each signal frame according to sample entropy of singular spectrum components corresponding to each signal frame, and obtaining a detection result;
Confirming a temperature characteristic related parameter corresponding to each signal frame according to the detection result;
arranging and combining the temperature characteristic related parameters corresponding to each signal frame to obtain a temperature characteristic related parameter set corresponding to the temperature analog signal;
acquiring a feature vector corresponding to the temperature feature related parameter set;
constructing a model by utilizing the feature vector to obtain a temperature parameter estimation model;
carrying out temperature parameter tracking on the temperature simulation signal by using the temperature parameter estimation model to obtain a tracking result;
confirming a correlation index of temperature parameters in the temperature analog signal according to the tracking result;
screening out a temperature parameter related signal value in the temperature analog signal based on the correlation index;
determining the time sequence change condition of the temperature parameter related signal value, and judging the stability of the temperature parameter related signal value according to the time sequence change condition;
and confirming whether the stability is greater than or equal to a preset threshold, if so, confirming that the temperature analog signal further meets the standard, otherwise, confirming that the temperature analog signal does not meet the standard.
9. The power semiconductor device internal temperature distribution measurement system according to claim 1, wherein: the installation position of the temperature measuring element of the contact temperature measuring system (11) in the detection area is determined by the following method:
Dividing the detection area of each temperature measuring element into a plurality of subareas with equal areas;
detecting thickness and density parameters of the inner wall of the semiconductor device corresponding to each sub-region;
determining the heat release coefficient and the heat absorption coefficient of each subregion according to the thickness and the density parameters of the inner wall of the semiconductor inner device corresponding to the subregion;
determining a temperature difference between a first temperature of the inner wall of the power semiconductor device and a second temperature of a vacuum space inside the device when the power semiconductor device works according to a preset test result;
determining the maximum endothermic temperature of each subarea according to the density parameter of the subarea, and calculating the space temperature of the vacuum space in the device at the lowest endothermic temperature based on the maximum endothermic temperature and the temperature difference;
calculating the heat emissivity of each sub-area of each temperature measuring element according to the parameters:
wherein F is ij The emissivity of heat, T, expressed as the j-th sub-region of the i-th temperature sensing element ij1 Expressed as the maximum endothermic temperature, T, of the jth sub-region of the ith temperature measuring element ij2 Expressed as the spatial temperature of the vacuum space inside the device at the maximum endothermic temperature of the jth sub-region of the ith temperature measuring element, delta expressed as the Stefan Boltzmann constant, s ij The distance between the jth sub-area expressed as the ith temperature measuring element and the heating source of the power semiconductor device, A ij The heat release coefficient of the jth sub-region, denoted as ith temperature sensing element, B ij The coefficient of heat absorption, ln, expressed as natural logarithm, μ, expressed as the j-th sub-region of the i-th temperature sensing element ij The space utilization rate of the jth sub-region expressed as the ith temperature measuring element in the internal space of the power semiconductor device;
acquiring physical parameters of each temperature measuring element, and determining the sensitivity of the temperature measuring element in each temperature range according to the physical parameters;
calculating the maximum radiant heat of each subarea according to the heat radiation rate of each subarea and the maximum endothermic temperature of the subarea;
determining the target sensitivity of each temperature measuring element in each sub-area according to the maximum radiation heat of each temperature measuring element to each sub-area corresponding to the temperature measuring element;
calculating the working performance index of each temperature measuring element in each sub-area according to the target sensitivity of each temperature measuring element in each sub-area:
wherein Q is ij Expressed as the index of the performance of the ith temperature measuring element in the jth sub-zone, D ij Denoted as the ith temperature measuring element at the jth sub-The target sensitivity of the region, e, is expressed as a natural constant, the value is 2.72, B i Represented as the endothermic coefficient, θ, of the ith temperature measuring element ij Index of thermal resistance of the ith temperature measuring element at maximum radiant heat of the jth sub-area, M ij The maximum radiant heat quantity expressed as the jth sub-area is 0.2,0.4 for the temperature detection interference factor of the ith temperature measuring element]；
Selecting a target subarea with the maximum working performance index of each temperature measuring element as an installation area of the temperature measuring element;
the mounting position of each temperature measuring element is determined according to the volume of the temperature measuring element and the area of the mounting area of the temperature measuring element.
10. A method of using the internal temperature distribution measurement system of a power semiconductor device according to any one of claims 1 to 9, comprising the steps of:
the first step: firstly, carrying out temperature measurement treatment in different modes on the positions of different areas inside the semiconductor device through a temperature acquisition terminal (1);
and a second step of: after the temperature is measured in the semiconductor device, calculating the temperature values measured in different modes through a temperature processing server (2), and obtaining an average value of the temperatures acquired in an area in a mode without any mode;
and a third step of: and (3) carrying out abnormality investigation on the obtained average value through a monitoring terminal (3), and carrying out alarm processing according to the data difference after the investigation.
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| CN117782363B (en) * | 2024-02-27 | 2024-05-28 | 山东蓝孚高能物理技术股份有限公司 | Nondestructive measurement method and system for internal temperature of traveling wave electron accelerator |
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