CN116295555A - Optical fiber F-P cavity MEMS temperature-pressure composite sensor and preparation method thereof - Google Patents
Optical fiber F-P cavity MEMS temperature-pressure composite sensor and preparation method thereof Download PDFInfo
- Publication number
- CN116295555A CN116295555A CN202310273142.4A CN202310273142A CN116295555A CN 116295555 A CN116295555 A CN 116295555A CN 202310273142 A CN202310273142 A CN 202310273142A CN 116295555 A CN116295555 A CN 116295555A
- Authority
- CN
- China
- Prior art keywords
- optical fiber
- temperature
- protection sleeve
- cavity
- pressure composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013307 optical fiber Substances 0.000 title claims abstract description 119
- 239000002131 composite material Substances 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 239000011521 glass Substances 0.000 claims abstract description 54
- 239000010453 quartz Substances 0.000 claims abstract description 47
- 239000000741 silica gel Substances 0.000 claims abstract description 16
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 230000001965 increasing effect Effects 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 47
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 29
- 239000012528 membrane Substances 0.000 claims description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000009623 Bosch process Methods 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 238000011161 development Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000004321 preservation Methods 0.000 claims 1
- 239000000523 sample Substances 0.000 abstract description 21
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 238000004806 packaging method and process Methods 0.000 abstract description 10
- 238000002513 implantation Methods 0.000 abstract description 8
- 238000007917 intracranial administration Methods 0.000 abstract description 8
- 238000012544 monitoring process Methods 0.000 abstract description 7
- 239000011148 porous material Substances 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000000835 fiber Substances 0.000 description 16
- 238000001228 spectrum Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- VJJVVKGSBWRFNP-UHFFFAOYSA-N [O].[Si](=O)=O Chemical compound [O].[Si](=O)=O VJJVVKGSBWRFNP-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007428 craniotomy Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 210000000056 organ Anatomy 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000010259 detection of temperature stimulus Effects 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000004393 prognosis Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
- G01D5/353—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre
- G01D5/35306—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement
- G01D5/35309—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement using multiple waves interferometer
- G01D5/35312—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement using multiple waves interferometer using a Fabry Perot
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/01—Measuring temperature of body parts ; Diagnostic temperature sensing, e.g. for malignant or inflamed tissue
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/03—Detecting, measuring or recording fluid pressure within the body other than blood pressure, e.g. cerebral pressure; Measuring pressure in body tissues or organs
- A61B5/031—Intracranial pressure
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/68—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
- A61B5/6846—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be brought in contact with an internal body part, i.e. invasive
- A61B5/6847—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be brought in contact with an internal body part, i.e. invasive mounted on an invasive device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
- G01D5/353—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre
- G01D5/35306—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement
- G01D5/35309—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement using multiple waves interferometer
- G01D5/35316—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement using multiple waves interferometer using a Bragg gratings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
- G01D5/353—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre
- G01D5/3537—Optical fibre sensor using a particular arrangement of the optical fibre itself
- G01D5/35374—Particular layout of the fiber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0247—Pressure sensors
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0271—Thermal or temperature sensors
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- General Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Biophysics (AREA)
- Pathology (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Surgery (AREA)
- Animal Behavior & Ethology (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Veterinary Medicine (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Hematology (AREA)
- Neurosurgery (AREA)
- Plasma & Fusion (AREA)
- Micromachines (AREA)
Abstract
The invention discloses an optical fiber F-P cavity MEMS temperature-pressure composite sensor which mainly comprises a temperature-pressure composite sensitive chip, a multimode quartz optical fiber, an optical fiber protection sleeve and a silica gel ball head. The temperature-pressure composite sensitive chip is a silicon glass optical fiber double F-P cavity blind hole structure which is built in a micro-channel and is manufactured based on an MEMS technology, the end face of the multimode quartz optical fiber is beveled by 45 degrees and is plated with a multi-layer medium reflection increasing film to form a light path steering prism, the optical fiber protection sleeve adopts a side open pore structure, and the top end of the optical fiber protection sleeve is sealed by a silica gel ball head. The sensor adopts a side open pore packaging structure based on a micro-channel, and the cutting and damage to the structure generated by the optical fiber sensor probe with the traditional forward open pore structure during medical implantation are avoided by changing the transmission direction of an optical path; meanwhile, the F-P air cavity chamber is widened along the lateral direction, so that the outer diameter packaging size of the sensor probe can be effectively reduced while the sensitivity of the sensor is ensured, and the sensor probe is suitable for intracranial monitoring and related medical fields with strict requirements on size and structure.
Description
Technical Field
The invention relates to the technical field of medical high-precision optical fiber sensing, in particular to an optical fiber F-P cavity MEMS temperature-pressure composite sensor and a preparation method thereof.
Background
In the clinical medical field, temperature and pressure monitoring is the most rapid, objective and accurate method for diagnosing diseases of organs of body parts, and is also an important means for clinical medicine guidance and prognosis improvement, especially for intracranial temperature-pressure compound monitoring. The intracranial temperature-pressure compound monitoring usually adopts an implantation means, craniotomy is needed to be carried out on a patient before implantation, the craniotomy size is determined by the outer diameter size of a sensor adopted by the intracranial temperature-pressure compound monitoring, and the increase of the outer diameter size can improve the invasiveness of the whole structure and the danger of the craniotomy. At present, the intracranial implantation type temperature-pressure composite sensor applied to clinic mainly comprises a piezoresistive sensor and an optical fiber sensor.
The piezoresistive temperature-pressure composite sensor adopts a double-probe structure of a pressure sensor and a thermistor based on the piezoresistive effect, and the size of the whole chip structure can be as small as possible by integrating the thermistor and the piezoresistive sheet into one MEMS chip, and the diameter of the probe of the piezoresistive temperature-pressure composite sensor for intracranial measurement with the minimum size can be within 800 mu m at present; the piezoresistive sensor adopts a metal material lead and electric signal transmission, is insensitive to the signal transmission direction, can place the pressure sensing surface of the sensor on the side, and the front surface of the probe is protected by adopting a ball head structure, so that the minimum outer diameter size and invasiveness of the whole structure are realized. However, the piezoresistive sensor has the defects that the piezoresistive sensor adopts the electrical signal transmission and metal shell packaging mode, has eddy current inside, cannot be used in strong electromagnetic environments such as brain CT, nuclear magnetic resonance and the like, and has certain limitation.
The optical fiber type temperature-pressure composite sensor generally adopts a measurement principle of compounding an optical fiber F-P single resonant cavity and a Bragg fiber grating, wherein the optical fiber F-P single resonant cavity is sensitive to pressure, and the Bragg fiber grating is sensitive to temperature. The patent 201110308246.1 discloses a miniature intracranial multiparameter sensor based on optical fiber sensing, which adopts the measurement mode, and can realize the use of the sensor in a strong electromagnetic environment through non-metallic material encapsulation and an all-optical path transmission structure. However, the sensor cannot be bent at a large angle due to the sensitivity of the optical fiber to the signal transmission direction, so that the sensor can sense pressure only in a forward hole opening mode, the size and invasiveness of the whole packaging structure are increased, meanwhile, the damage to human organs in the implantation process can be caused by sharp corners of a sensor chip, and the difficulty and the danger of clinical operation are increased.
Disclosure of Invention
Aiming at the problems, the invention aims to provide the optical fiber F-P cavity MEMS temperature-pressure composite sensor and the preparation method thereof, and the sensor adopts an optical fiber sensing principle and an optical path steering technology, integrates the advantages of a piezoresistive type sensor and an optical fiber type sensor, can realize lateral pressure sensing on the premise of ensuring the sensitivity and electromagnetic interference resistance of the sensor, reduces the overall packaging outer diameter size, and reduces the invasiveness and damage of a sensor probe to an implantation part.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: the optical fiber F-P cavity MEMS temperature-pressure composite sensor is characterized by comprising a temperature-pressure composite sensitive chip, a multimode quartz optical fiber, an optical fiber protection sleeve and a silica gel ball head, wherein the temperature-pressure composite sensitive chip is a cuboid structure formed by a pressure sensitive membrane (ultrathin monocrystalline silicon material, the thickness of which is 10 mu m) and a glass substrate (high boron silicon material, preferably a BF33 glass sheet), and the size of the cuboid structure is 2000 x 500 x 530 mu m.
A concave cavity with the depth of 20 mu m is formed in the inner surface of the ultrathin monocrystalline silicon pressure-sensitive membrane, and the concave cavity and the surface of the glass substrate are bonded through an anode to form an F-P air cavity with a blind hole structure; in comparison with the traditional F-P air cavity structure with round diaphragms fixedly supported at the periphery, the invention increases the pressure sensitivity of the sensor under the limitation of the axial size by laterally widening the F-P air cavity.
A micro-channel is carved at the bottom of the glass substrate, a multimode quartz optical fiber is penetrated and positioned to the middle position of the temperature-pressure composite sensitive chip, and the peripheral surface of the multimode quartz optical fiber, which is close to the inner wall of the optical fiber protection sleeve, is in contact with the inner wall surface of the optical fiber protection sleeve.
The temperature-pressure composite sensitive chip is positioned, embedded and coated in the optical fiber protection sleeve, and the outer surface of the ultrathin monocrystalline silicon pressure sensitive membrane penetrates through the side wall of the optical fiber protection sleeve and is communicated with the outer side of the optical fiber protection sleeve.
The end face of the multimode quartz optical fiber, which is positioned in the micro channel, is provided with a light path steering structure which is vertically emitted from a light source transmitted by the multimode quartz optical fiber through a temperature-pressure composite sensitive chip and a side wall penetrating through the optical fiber protection sleeve, and the structure is specifically a light path steering prism with an inclined 45-degree surface.
Furthermore, the upper surface of the temperature-pressure composite sensitive chip is level with the side wall of the optical fiber protection sleeve, and a silica gel ball head is coated and arranged at the side wall of the temperature-pressure composite sensitive chip and the side end of the optical fiber protection sleeve.
The working principle of the sensor is as follows:
the light beam is emitted from SLED white light source, and is incident into multimode quartz optical fiber through 1*2 optical fiber coupling beam splitter, when the incident light is transmitted to the inclined 45 DEG structure coated with metal reflection increasing film, the structure is expressed as an optical path turning prism, the incident light is turned at 90 DEG and emitted from the side wall of optical fiber horizontally connected with glass substrate, and is vertically incident into temperature-pressure composite sensitive chip from the central position of glass substrate.
For the light wave band (400-850 nm) of the white light source, the glass substrate is optically transparent, and the monocrystalline silicon pressure-sensitive membrane is optically absorbing, so that the lower surface, the upper surface and the lower surface of the glass substrate form a double F-P cavity structure, and white light incident to the monocrystalline silicon pressure-sensitive membrane is absorbed by the material and does not return. The composite spectrum signal formed by modulating the double F-P interference cavities vertically exits from the lower surface of the glass substrate, is deflected by the inclined 45-degree light path deflecting prism again and enters the multimode quartz optical fiber; finally, the modulated light enters a spectrometer module through a 1*2 optical fiber coupling beam splitter, and the cavity lengths of the double F-P cavities can be respectively obtained by carrying out interference spectral filtering on the double F-P cavities and adopting a proper cavity length demodulation algorithm.
Particularly, the lower surface of the monocrystalline silicon pressure-sensitive membrane and the upper surface of the glass substrate form an F-P air cavity, and the cavity is pressure-sensitive based on a large-area suspended film; the lower and upper surfaces of the glass substrate form an F-P substrate cavity that appears to be temperature sensitive based on thermal expansion of the material. And the corresponding relation between the cavity length of the double F-P cavity and each sensitive parameter is obtained through static calibration of the pressure and the temperature of the sensor, so that the composite obtaining of the temperature and the pressure can be realized.
The preparation method of the optical fiber F-P cavity MEMS temperature-pressure composite sensor is characterized by comprising the following steps of:
(1) Selecting a clean SOI (silicon on insulator) slice, wherein the clean SOI slice consists of a monocrystalline silicon device layer, a silicon dioxide buried oxide layer and a monocrystalline silicon substrate layer, spin-coating photoresist on the surface of the monocrystalline silicon device layer, and exposing and developing by a photoetching machine to form a cavity etching window of the F-P air cavity;
(2) Taking photoresist as an etching mask, etching the F-P air cavity to a cavity length, wherein the etching process adopts a Bosch process, etching is performed for 10s, passivation is performed for 1s as a group of cycles, and the etching process ensures the verticality of the side wall and the roughness of the bottom;
(3) Selecting a clean borosilicate glass sheet, and spraying thick photoresist on the surface of the glass sheet by using a photoresist spraying machine;
hardening the photoresist in a gradient heating mode, and etching the bottom of the glass sheet to form a micro-channel positioned and penetrated by the multimode quartz optical fiber by taking the photoresist as etching mask deep reactive ions;
(4) Cleaning the processed SOI sheet and glass sheet, activating the bonding surfaces of the monocrystalline silicon device layer and the glass sheet of the SOI sheet by adopting oxygen plasma, and performing anode bonding on the SOI sheet and the glass sheet by using a bonding machine after the activation is completed, wherein the bonding temperature is 360 ℃, and the bonding vacuum degree is 0.5mbar;
(5) After bonding, wet etching is carried out on the monocrystalline silicon substrate layer of the SOI sheet, wherein the wet etching specifically comprises the following steps: soaking the bonding sheet in TMAH solution with the temperature kept at 90 ℃ for 12 hours to completely remove monocrystalline silicon on the monocrystalline silicon substrate layer of the SOI sheet until the silicon dioxide buried oxide layer is positioned to stop etching;
(6) Attaching a UV film to the bottom of the glass sheet for protection, then soaking the bonding sheet in hydrofluoric acid to enable the silicon dioxide oxygen burying layer to fully react with the hydrofluoric acid and then removing the silicon dioxide oxygen burying layer;
(7) Scribing the processed bonding piece by using femtosecond laser to form the temperature-pressure composite sensitive chip;
(8) The multimode quartz optical fiber cuts the optical path steering prism with an inclined 45 DEG surface, and a multi-layer medium reflection-increasing film is plated on the cut surface, wherein the medium reflection-increasing film is in a wave band of incident light, and the surface broadband reflectivity is more than 90%;
(9) After the processing is finished, horizontally inserting the multimode quartz fiber into the micro-channel, adjusting the inclination angle of the cutting end surface of the multimode quartz fiber, and bonding and fixing the multimode quartz fiber and the glass sheet after the rear end can acquire stable double F-P cavity signals;
(10) An opening penetrating through the temperature-pressure composite sensitive chip is formed in the side wall of the top end of the optical fiber protection sleeve, the temperature-pressure composite sensitive chip fixed with multimode quartz optical fibers is inserted into the optical fiber protection sleeve from the opening until the pressure sensing surface of the temperature-pressure composite sensitive chip is flush with the side wall of the optical fiber protection sleeve, and the temperature-pressure composite sensitive chip and the optical fiber protection sleeve are adhered and fixed;
(11) And coating the radial position of the top end of the optical fiber protection sleeve by using silica gel, covering the radial end face of the optical fiber protection sleeve, and curing to form the silica gel ball head.
The beneficial effects of the invention are as follows:
(1) The temperature-pressure composite sensitive chip is packaged by adopting the side open pore structure based on the micro channel, and the side open pore of the sensor is realized through the light path steering system, so that the flatness and smoothness of the whole structure of the sensor probe can be ensured, and the sharp edge part of the chip is prevented from cutting and damaging human organs during implantation;
(2) The temperature-pressure composite sensitive chip optimizes the sensor according to the probe packaging form with the side opening, and compared with the traditional F-P cavity structure with the peripheral solid support round diaphragm, the temperature-pressure composite sensitive chip can effectively reduce the radial size of the whole probe while guaranteeing the sensitivity of the sensor by laterally widening the F-P cavity, improves the compactness of the whole packaging structure and reduces the implantation wound of the sensor;
(3) Compared with the traditional single F-P cavity probe structure for measuring the temperature by using the composite fiber Bragg grating, the probe structure of the double F-P cavity temperature-pressure composite sensor has the advantages that the fiber Bragg grating is wrapped in the probe, the temperature transmission process has loss and slower temperature response, the temperature measurement precision of the probe is affected, and the double F-P cavity temperature-pressure composite sensitive chip is directly exposed to the external environment, so that the probe structure has faster temperature response speed and higher temperature measurement precision;
(4) The sensor adopts full optical path transmission, the probe part does not contain any metal materials and electric loops, the electromagnetic interference resistance is high, and uninterrupted continuous monitoring under strong electromagnetic environments such as brain CT, nuclear magnetic resonance and the like can be realized.
Drawings
FIG. 1 is a schematic diagram of a temperature-pressure composite sensor probe structure according to the present invention.
FIG. 2 is a three-dimensional schematic diagram of a temperature-pressure composite sensitive chip structure according to the present invention.
FIG. 3 is a flow chart of the MEMS process of the temperature-pressure composite sensitive chip of the invention.
FIG. 4 is a graph showing the spectrum of the sensor of the present invention at a film thickness of 10 um.
FIG. 5 is a graph of the sensor spectrum of the sensor of the present invention after the film thickness is reduced to 8 um.
FIG. 6 is a graph showing the relationship between the widening size of the F-P cavity and the displacement of the pressure sensitive membrane under unit pressure.
In the figure: 1-temperature-pressure composite sensitive chip; 11-a pressure sensitive membrane; 101-a cavity; 12-a glass substrate; 2-multimode quartz fiber; 3-an optical fiber protective sleeve; 4-a silica gel ball head; a 5-monocrystalline silicon device layer; 6-a silicon dioxide oxygen burying layer; 7-a monocrystalline silicon substrate layer; 8-glass sheets; 9-micro-channels; 10-multilayer dielectric antireflective films.
Detailed Description
In order to enable those skilled in the art to better understand the technical solution of the present invention, the technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
As shown in fig. 1, the optical fiber F-P cavity MEMS temperature-pressure composite sensor is composed of a temperature-pressure composite sensitive chip 1, a multimode quartz optical fiber 2, an optical fiber protection sleeve 3 and a silica gel ball head 4, wherein:
the temperature-pressure composite sensitive chip 1 is formed by anodic bonding of an ultrathin monocrystalline silicon pressure sensitive membrane (the pressure sensitive membrane is described below) 11 and a high borosilicate glass substrate (the glass substrate is described below) 12, the structural dimension is 2000 x 500 x 530 μm, a concave cavity 101 with the depth of 20 μm and the cavity length of 20 μm and a blind hole structure is formed in the inner surface of the pressure sensitive membrane 11, and the concave cavity 101 and the surface of the glass substrate 12 form an F-P air cavity.
The thickness of the pressure sensitive membrane 11 at the position corresponding to the concave cavity 101 is 10 μm, the spectrum diagram of the sensor at the size is shown in fig. 4, the spectrum interference signal of the sensor is good at 10 μm, and the contrast of the F-P cavity is obvious.
When the thickness of the pressure sensitive membrane 11 is smaller than the thickness and is reduced to 8 μm, as shown in fig. 5, the spectrum of the sensor is shown in fig. 5, the white light incident into the pressure sensitive membrane 11 cannot be completely absorbed by the monocrystalline silicon material due to insufficient penetration depth, and can be reflected by the upper surface of the pressure sensitive membrane 11 and interfere with the sensor signal, so that the contrast of the F-P cavity interference signal is poor, and the signal cannot be effectively demodulated.
The corresponding relationship between the pressure sensitivity and the thickness of the sensitive diaphragm of the sensor can be characterized by a sensor sensitivity formula, wherein the sensor sensitivity formula is as follows:
wherein, S-sensor pressure sensitivity, E, v-Young 'S modulus and Poisson' S ratio of sensitive diaphragm, R-sensor F-P cavity equivalent radius, h-sensitive diaphragm thickness.
Therefore, when the thickness of the pressure sensitive membrane 11 is greater than 10 μm, the pressure sensitivity of the sensor decays exponentially with the increase of the thickness of the sensitive membrane, and the actual use requirement cannot be satisfied.
Compared with the traditional round diaphragm F-P air cavity structure with fixed and supported periphery, the concave cavity 101 in the pressure sensitive diaphragm 11 is laterally widened, so that the pressure sensitivity of the sensor can be improved while the radial size of the sensor is reduced. For widening the F-P cavity along the lateral direction, the equivalent radius of the F-P cavity can be increased, and under the condition of changing the unit external pressure, the pressure sensitive diaphragm generates larger displacement, namely the sensitivity of the corresponding sensor is improved, and the corresponding relation between the widening size of the F-P cavity and the displacement of the pressure sensitive diaphragm under the unit pressure is shown in fig. 6.
The glass substrate 12 has a thickness of 500 μm, and is matched with a cuboid structure body formed by cutting the temperature-pressure composite sensitive chip 1, a micro-channel 9 is arranged at the bottom of the glass substrate 12, the micro-channel 9 penetrates from one side of the substrate to the central part of the substrate, the channel width and the channel depth are both 130 μm, the micro-channel 9 is formed by adopting reactive ion dry etching, and the bottom is smooth and flat and can be used as an optical reflecting surface.
The end face of the multimode quartz fiber 2 adopts an inclined plane structure with an inclined angle of 45 degrees, is horizontally connected with the glass substrate 12 of the temperature-pressure composite sensitive chip 1 through the micro-channel 9, is inserted into the central part of the glass substrate 12, and is adhered and fixed with the glass substrate 12. The inclined 45-degree end face of the multimode quartz fiber 2 is plated with a multilayer dielectric reflection enhancing film 10, and the inclined 45-degree end face faces away from the micro-channel 9, so that a vertical light path steering prism system is formed for light beams entering from the multimode quartz fiber 2.
The incident light passes through the light path steering prism (45 DEG end face) to vertically enter the temperature-pressure composite sensitive chip 1, and for the incident light, the lower surface of the pressure sensitive membrane 11 and the upper surface of the glass substrate 12 form an F-P air cavity which is sensitive to pressure based on a large-area suspended film; the lower and upper surfaces of the glass substrate 12 form an F-P substrate cavity that appears to be temperature sensitive based on thermal expansion of the material.
The top side wall of the optical fiber protective sleeve 3 (with the outer diameter of 900 mu m and the inner diameter of 700 mu m) is provided with a small hole matched with the outer diameter of the temperature-pressure composite sensitive chip 1, the temperature-pressure composite sensitive chip 1 is inserted into the small hole and is adhered to the optical fiber protective sleeve 3, the upper surface of the temperature-pressure composite sensitive chip 1 is flush with the side wall of the optical fiber protective sleeve, and the bottom surface of the multimode quartz optical fiber 2 is contacted with the inner bottom surface of the optical fiber protective sleeve 3.
The radial position of the top end of the optical fiber protection sleeve 3 is covered with silica gel to form a silica gel ball head 4 structure, and the whole probe structure coated by the optical fiber protection sleeve 3 is required to be smooth and burr-free and have small-angle sharp edges.
The set cavity length of 20 mu m is further reduced based on the overall size design of the sensor, so that the available interference period is insufficient when the F-P cavity interference spectrum is demodulated, and the demodulation precision is affected; and further increasing the cavity length can increase the longitudinal dimension of the temperature-pressure composite sensitive chip 1, so that the upper surface of the chip is higher than the outer diameter of the optical fiber protection sleeve which is set at present, and the outer diameter of the optical fiber protection sleeve 3 needs to be further enlarged to completely wrap the sensor chip, so that the whole packaging outer diameter of the sensor probe is increased.
For the F-P cavity interference spectrum, there are:
wherein, the interference period of delta-F-P cavity, the refractive index of medium in n-F-P cavity, the cavity length of L-F-P cavity, lambda-optical wavelength, v-optical frequency and c-optical speed.
As can be seen from the above equation, n and c are generally constant, and when the light source is determined, the upper and lower limits corresponding to λ and ν are also determined, and when the F-P cavity length is reduced, a complete delta interference period needs to occupy a wider optical wavelength and optical frequency range, i.e. the interference spectrum has fewer interference periods in the coverage wavelength range of the light source. The common F-P cavity length demodulation adopts a multimodal demodulation algorithm, the cavity length is demodulated by capturing a plurality of interference peaks of an F-P cavity interference spectrum, the more the capturing peaks are, the more accurate the demodulation is, and when the F-P cavity length is too small, the demodulation accuracy of the sensor cannot be ensured when the available interference period of the interference spectrum is insufficient.
In summary, the sensor realizes lateral perception of temperature and pressure with the side-hole optical fiber protective sleeve 3 through the optical path steering prism formed by the multimode quartz optical fiber 2 with an inclined angle of 45 degrees and coated with the multilayer dielectric reflection enhancing film 10, and realizes the composite measurement of temperature and pressure through the acquisition and demodulation of the double F-P cavity composite spectrum. The sensor probe outer diameter packaging size can be effectively reduced while the sensitivity of the sensor is ensured, and the sensor probe outer diameter packaging size is suitable for intracranial monitoring and related medical fields with strict requirements on size and structure.
A preparation method of an optical fiber F-P cavity MEMS temperature-pressure composite sensor comprises the following steps:
(1) A clean SOI wafer is selected and consists of a monocrystalline silicon device layer 5, a silicon dioxide buried oxide layer 6 and a monocrystalline silicon substrate layer 7, wherein the thickness of the monocrystalline silicon device layer 5 is 30 mu m; photoresist is spin-coated on the surface of the monocrystalline silicon device layer 5, and a photoetching machine is used for exposure and development to form a cavity etching window of the F-P air cavity, as shown in figure 3 a.
(2) Using photoresist as an etching mask, and applying a high-density plasma dry etching method to etch the F-P air cavity to a cavity length of 20 mu m; the etching process adopts a Bosch process, the etching process is carried out for 10s, the passivation process is carried out for 1s as a group of cycles, the etching process ensures the verticality of the side wall to be 90 degrees+/-1 degrees, and the roughness Ra of the bottom is less than 0.5nm, as shown in figure 3 b.
(3) Taking a clean BF33 glass sheet 8 with the thickness of 500 mu m; spraying thick photoresist on the surface of the glass sheet 8 by using a photoresist spraying machine, wherein the thickness is more than 30 mu m; hardening the photoresist in a gradient heating mode, and improving the etching resistance of the photoresist; and the photoresist is used as etching mask to deeply and reactively etch the micro-channel 9 at the bottom of the glass sheet 8, the etching depth is 130 mu m, and when the etching depth is close to the target depth, the bottom roughness Ra <3nm is ensured by reducing the power of the upper polar plate and the lower polar plate of the etching machine and the gas flow rate, as shown in figure 3 c.
(4) The processed SOI sheet and BF33 glass sheet 8 were cleaned by RCA standard cleaning process, and the bonding surfaces of the monocrystalline silicon device layer 5 and the glass sheet of the SOI sheet were activated by oxygen plasma, and after the activation, the SOI sheet and the glass sheet 8 were subjected to anodic bonding by a bonding machine at a bonding temperature of 360℃and a bonding vacuum of 0.5mbar, as shown in FIG. 3 d.
(5) After bonding is completed, wet etching is performed, wherein the wet etching specifically comprises the following steps: the bonding wafer is immersed in a TMAH solution at 90 ℃ for 12 hours, so that the monocrystalline silicon of the monocrystalline silicon substrate 7 of the SOI wafer is completely removed until the silicon dioxide buried oxide layer is located to stop etching, as shown in fig. 3 e.
(6) The bottom of BF33 glass sheet 8 is protected by attaching a UV film, and then the bonding sheet is immersed in hydrofluoric acid for about 30s, so that the silicon dioxide buried oxide layer 6 is removed after being fully reacted with the hydrofluoric acid, as shown in fig. 3 f.
(7) Scribing the processed bonding piece by using femtosecond laser to form a temperature-pressure composite sensitive chip 1 structure shown in fig. 2; the dicing size of the chip is 2000 μm 500 μm, and the dicing mark is adopted in the dicing process to ensure that the F-P air cavity chamber is positioned at the center of the temperature-pressure composite sensitive chip 1.
(8) Cutting the end face of the multimode quartz optical fiber 2 by adopting a special optical fiber cutting knife inclined by 45 degrees, and plating a multilayer medium reflection increasing film 10 on the inclined 45-degree end face of the multimode quartz optical fiber 2 by using an optical fiber coating machine, so that the broadband reflectivity of the surface is more than 90% in a wave band of incident light; the processed multimode quartz optical fiber 2 is horizontally inserted into a micro-channel 9 until the end face with the inclined angle of 45 degrees is positioned at the center of the substrate of the temperature-pressure composite sensitive chip 1, and after the end face inclination angle is adjusted to the rear end, stable double F-P cavity signals can be acquired, the multimode quartz optical fiber 2 and the substrate are fixed by adopting biocompatible epoxy resin glue.
(9) After the processing is finished, horizontally inserting the multimode quartz fiber into the micro-channel 9, adjusting the inclination angle of the cutting end surface of the multimode quartz fiber 2, and after the rear end can acquire stable double F-P cavity signals, bonding and fixing the multimode quartz fiber 2 and the glass substrate 8 through biocompatible epoxy resin glue;
(10) The method comprises the steps of selecting an optical fiber protection sleeve 3 made of biocompatible polypropylene resin (PLA) material, carrying out perforating (small holes) on the side wall position of the top end of the optical fiber protection sleeve 3 based on the cutting size of a temperature-pressure composite sensitive chip 1, inserting the temperature-pressure composite sensitive chip 1 fixed with a multimode quartz optical fiber 2 into the optical fiber protection sleeve 3 from the perforating position until the pressure sensing surface of the temperature-pressure composite sensitive chip 1 is flush with the side wall of the optical fiber protection sleeve 3, and carrying out position fixing on the temperature-pressure composite sensitive chip 1 and the optical fiber protection sleeve 3 by adopting biocompatible epoxy resin glue.
(11) The radial position of the top end of the optical fiber protection sleeve 3 is coated with silica gel, the radial end face of the optical fiber protection sleeve 3 is covered, the silica gel ball head 4 is formed after solidification, the multimode quartz optical fiber 2 is connected with a rear-end demodulation part, and the rear-end demodulation part comprises a 1*2 optical fiber coupling beam splitter, a SLED white light source, a spectrometer module and a computer signal processing system.
The principle of the invention is as follows: the light beam is emitted from the SLED white light source and is incident into the multimode quartz fiber 2 through the 1*2 fiber coupling beam splitter; when the incident light is transmitted to the inclined 45 DEG structure plated with the metal reflection increasing film, the structure is expressed as an optical path turning prism, the incident light is turned at an angle of 90 DEG to exit from the side wall of the optical fiber horizontally connected with the glass substrate 12, and vertically enters the temperature-pressure composite sensitive chip 1 from the center position of the glass substrate 12.
For the light wave band (400-850 nm) where the white light source is located, the glass substrate 12 is optically transparent, and the monocrystalline silicon pressure-sensitive membrane 11 is optically absorbing, so that the lower surface, the upper surface and the lower surface of the glass substrate 12 and the monocrystalline silicon pressure-sensitive membrane 11 form a double F-P cavity structure, and white light incident to the monocrystalline silicon pressure-sensitive membrane 11 is absorbed by the material and is not returned. The composite spectrum signal formed by the modulation of the double F-P interference cavities vertically exits from the lower surface of the glass substrate 12, and is diverted again by the oblique 45-degree optical path diversion prism and enters the multimode quartz optical fiber 2; finally, the modulated light enters a spectrometer module through a 1*2 optical fiber coupling beam splitter, and the cavity lengths of the double F-P cavities can be respectively obtained by carrying out interference spectral filtering on the double F-P cavities and adopting a proper cavity length demodulation algorithm.
In particular, the lower surface of the monocrystalline silicon pressure-sensitive membrane 11 and the upper surface of the glass substrate 12 form an F-P air cavity which is pressure-sensitive based on a large-area suspended film; the lower and upper surfaces of the glass substrate 12 form an F-P substrate cavity that appears to be temperature sensitive based on thermal expansion of the material. And the corresponding relation between the cavity length of the double F-P cavity and each sensitive parameter is obtained through static calibration of the pressure and the temperature of the sensor, so that the composite obtaining of the temperature and the pressure can be realized.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. The present invention is subject to various changes and modifications without departing from the spirit and scope thereof, and such changes and modifications fall within the scope of the invention as hereinafter claimed.
Claims (9)
1. The optical fiber F-P cavity MEMS temperature-pressure composite sensor is characterized by comprising a temperature-pressure composite sensitive chip (1), a multimode quartz optical fiber (2), an optical fiber protection sleeve (3) and a silica gel ball head (4), wherein the temperature-pressure composite sensitive chip (1) is composed of a pressure sensitive membrane (11) and a glass substrate (12), a concave cavity (101) is formed in the inner surface of the pressure sensitive membrane (11), and the concave cavity (101) and the surface of the glass substrate (12) form an F-P air cavity;
the temperature-pressure composite sensitive chip (1) is embedded in a positioning way and is coated in the optical fiber protection sleeve (3), and the outer surface of the pressure sensitive membrane (11) penetrates through the side wall of the optical fiber protection sleeve (3) and is communicated with the outer side of the optical fiber protection sleeve (3);
one end of the multimode quartz optical fiber (2) penetrates into the optical fiber protection sleeve (3) and is positioned to penetrate to the middle position of the bottom side of the temperature-pressure composite sensitive chip (1), and the peripheral surface of the multimode quartz optical fiber (2) close to the inner wall of the optical fiber protection sleeve (3) is in contact with the inner wall surface of the optical fiber protection sleeve (3);
the multimode quartz optical fiber (2) is arranged on the end face in the temperature-pressure composite sensitive chip (1) in a penetrating way, and an optical path steering structure is arranged on the multimode quartz optical fiber (2) and vertically emitted from a light source transmitted by the multimode quartz optical fiber through the temperature-pressure composite sensitive chip (1) and the side wall penetrating through the optical fiber protection sleeve (3);
the silica gel ball head (4) is connected to the end side of the optical fiber protection sleeve (3) far away from one side of the multimode quartz optical fiber (2).
2. The sensor of claim 1, wherein: the optical path steering structure is an optical path steering prism which is used for setting the inner end surface of the multimode quartz optical fiber (2) to be inclined 45 degrees with the direction of the single side wall surface of the optical fiber protection sleeve (3).
3. The sensor of claim 1, wherein: the upper surface of the temperature-pressure composite sensitive chip (1) is flush with the side wall of the optical fiber protection sleeve (3).
4. The sensor of claim 1, wherein: the structural size of the temperature-pressure composite sensitive chip (1) is 2000 x 500 x 530 mu m, the cavity length of the F-P air cavity is 20 mu m, and the thickness of the position, corresponding to the F-P air cavity, of the pressure sensitive membrane (11) is 10 mu m.
5. The method for manufacturing the optical fiber F-P cavity MEMS temperature-pressure composite sensor according to claim 2, which is characterized by comprising the following steps:
(1) Selecting a clean SOI (silicon on insulator) sheet, wherein the clean SOI sheet consists of a monocrystalline silicon device layer (5), a silicon dioxide buried oxide layer (6) and a monocrystalline silicon substrate layer (7), photoresist is spin-coated on the surface of the monocrystalline silicon device layer (5), and a photoetching machine is used for exposure and development to form a cavity etching window of the F-P air cavity;
(2) Taking photoresist as an etching mask, etching the F-P air cavity to the cavity length, and taking etching and passivation as a group of circulation, wherein the etching process ensures the verticality of the side wall and the roughness of the bottom;
(3) Selecting a clean borosilicate glass sheet (8), and spraying thick photoresist on the surface of the glass sheet (8) by using a photoresist spraying machine;
hardening the photoresist in a gradient heating mode, and etching the bottom of the glass sheet (8) to form a micro-channel (9) positioned and penetrated by the multimode quartz optical fiber (2) by taking the photoresist as etching mask deep reactive ions;
(4) Cleaning the processed SOI sheet and glass sheet (8), activating the bonding surfaces of the monocrystalline silicon device layer (5) of the SOI sheet and the glass sheet (8) by adopting oxygen plasma, and performing anodic bonding on the SOI sheet and the glass sheet (8) by using a bonding machine after the activation is completed;
(5) After bonding is completed, wet etching is carried out on the monocrystalline silicon substrate layer (7) of the SOI wafer;
(6) Attaching a UV film to the bottom of a glass sheet (8) for protection, then soaking the bonding sheet in hydrofluoric acid to enable the silicon dioxide oxygen-buried layer (6) to fully react with the hydrofluoric acid and then removing the silicon dioxide oxygen-buried layer;
(7) Scribing the processed bonding piece by using femtosecond laser, namely forming the temperature-pressure composite sensitive chip (1);
(8) The multimode quartz optical fiber (2) cuts the optical path steering prism with an inclined 45 DEG surface, and a multilayer medium reflection increasing film (10) is plated on the cut surface;
(9) After the processing is finished, horizontally inserting the multimode quartz optical fiber (2) into the micro-channel (9), adjusting the inclination angle of the cutting end surface of the multimode quartz optical fiber (2), and after the rear end can acquire stable double F-P cavity signals, bonding and fixing the multimode quartz optical fiber (2) and the glass sheet (8);
(10) An opening penetrating through the temperature-pressure composite sensitive chip 1 is formed in the side wall of the top end of the optical fiber protection sleeve (3), the temperature-pressure composite sensitive chip (1) fixed with the multimode quartz optical fiber (2) is inserted into the optical fiber protection sleeve (3) from the opening until the pressure sensing surface of the temperature-pressure composite sensitive chip (1) is level with the side wall of the optical fiber protection sleeve (3), and the temperature-pressure composite sensitive chip (1) and the optical fiber protection sleeve (3) are bonded and fixed;
(11) And coating the radial position of the top end of the optical fiber protection sleeve (3) by using silica gel, covering the radial end surface of the optical fiber protection sleeve (3), and curing to form the silica gel ball head (4).
6. The method of manufacturing according to claim 5, wherein: in step (2), the etching process uses a Bosch process to etch for 10s, and passivation for 1s is a set of cycles.
7. The method of claim 6, wherein in step (4), the bonding conditions include: bonding temperature is 360 ℃, bonding vacuum degree is 0.5mbar.
8. The method of manufacturing according to claim 7, wherein: in the step (5), wet etching is to put the bonding sheet into TMAH solution with heat preservation at 90 ℃ for 12 hours, so that the monocrystalline silicon of the monocrystalline silicon substrate layer (7) of the SOI sheet is completely removed, and the etching is stopped until the position of the silicon dioxide oxygen-buried layer (6).
9. The method of manufacturing according to claim 8, wherein: in the step (8), the dielectric reflection enhancing film (10) has a surface broadband reflectivity of more than 90% in a wave band of incident light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310273142.4A CN116295555A (en) | 2023-03-21 | 2023-03-21 | Optical fiber F-P cavity MEMS temperature-pressure composite sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310273142.4A CN116295555A (en) | 2023-03-21 | 2023-03-21 | Optical fiber F-P cavity MEMS temperature-pressure composite sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116295555A true CN116295555A (en) | 2023-06-23 |
Family
ID=86823753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310273142.4A Pending CN116295555A (en) | 2023-03-21 | 2023-03-21 | Optical fiber F-P cavity MEMS temperature-pressure composite sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116295555A (en) |
-
2023
- 2023-03-21 CN CN202310273142.4A patent/CN116295555A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8966988B2 (en) | Ultra-miniature fiber-optic pressure sensor system and method of fabrication | |
| CN103557929B (en) | A kind of Fabry-perot optical fiber sound pressure sensor method for making based on graphene film and measuring method, device | |
| US20110023617A1 (en) | Ultra-miniature fiber-optic pressure sensor system and method of fabrication | |
| CN101034028B (en) | Fabry-Perotw fiber-optic pressure sensor and manufacture method therefor | |
| EP0172623B1 (en) | Optical measuring device using a spectral modulation sensor having an optically resonant structure | |
| CA2591787C (en) | A fiber optic pressure sensor for catheter use | |
| US20100094163A1 (en) | Medical apparatus with a sensor for detecting a force | |
| US20020003917A1 (en) | Micromachined, etalon-based optical fiber pressure sensor | |
| US5381231A (en) | One-piece silicon substrate having fiber optic stops and a reflective surface thereon and methods of manufacturing same | |
| JP2003107273A (en) | Optical coupler with many mutually self-aligned etching grooves and its manufacturing method | |
| CN108645405A (en) | A kind of inertia sensing unit that optical gyroscope is merged with accelerometer height | |
| WO2022134350A1 (en) | Optical fiber sensor based on polymer echo wall mode resonant cavity, and preparation method therefor | |
| CA2996365A1 (en) | Fibre-optic pressure sensor and method | |
| CN114486019B (en) | Optical fiber Fabry-Perot pressure sensor for eliminating interference of third cavity and MEMS manufacturing method | |
| US20060115202A1 (en) | Fibre optic based semiconductor micro sensors for sensing pressure or temperature, fabrication methods of said sensors, and a method of securing an optical fibre to a silicon block | |
| CN116295555A (en) | Optical fiber F-P cavity MEMS temperature-pressure composite sensor and preparation method thereof | |
| CN112254840A (en) | Optical fiber SPR sensor for measuring magnetic field and temperature based on STS structure | |
| JP2004198116A (en) | Bragg grating system optical waveguide type sensor and its manufacturing method | |
| JPH1172399A (en) | Optical-fiber pressure sensor | |
| JP3049323B2 (en) | Manufacturing method of micro lens for infrared focusing | |
| CN219087309U (en) | Integrated optical fiber MEMS microphone probe and optical fiber MEMS microphone | |
| JP2002323618A (en) | Optical resonator, method for manufacturing the same and wavelength controlling module | |
| JP2007263847A (en) | Optical fiber sensor | |
| JPH07286923A (en) | Pressure sensor and its manufacture | |
| CN213632451U (en) | Optical fiber SPR sensor for measuring magnetic field and temperature based on STS structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |