CN116288651A - Charging method for single crystal furnace, single crystal furnace and computer readable storage medium - Google Patents

Charging method for single crystal furnace, single crystal furnace and computer readable storage medium Download PDF

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Publication number
CN116288651A
CN116288651A CN202111577113.4A CN202111577113A CN116288651A CN 116288651 A CN116288651 A CN 116288651A CN 202111577113 A CN202111577113 A CN 202111577113A CN 116288651 A CN116288651 A CN 116288651A
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charging
time
mass
feeding
crucible
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赵阳
张伟建
刘永生
武高峰
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Longi Green Energy Technology Co Ltd
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Longi Green Energy Technology Co Ltd
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Priority to CN202111577113.4A priority Critical patent/CN116288651A/en
Priority to PCT/CN2022/104705 priority patent/WO2023115910A1/en
Publication of CN116288651A publication Critical patent/CN116288651A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides a charging method for a single crystal furnace, the single crystal furnace and a computer readable storage medium, and relates to the technical field of crystal pulling. The method comprises the following steps: acquiring a preset total feeding mass M1, a first feeding mass M1, a last feeding mass M2 and a single average feeding mass
Figure DDA0003424923790000011
Radius r of the crucible; charging for the first time; subtracting M1 from M1 and subtracting M2 from the mixture to obtain the mass M2 of the material to be distributed; according to M2,
Figure DDA0003424923790000012
Determining the required charge of the material to be dispensedThe times and the feeding quality of the materials to be distributed in each feeding time respectively; the time when the previous feeding is melted to 80-90% of the mass is determined as the feeding time of the next feeding; according to Δh=m ≡pi r 2 Rho, determining the height of the crucible which is required to descend and corresponds to each charging time except the first charging time; and controlling the single crystal furnace, lowering the crucible by delta H corresponding to the charging time at each charging time, and then adding silicon raw materials with corresponding charging quality into the crucible until the last charging. The method is simple and convenient to operate manually, saves time and is not easy to splash silicon.

Description

Charging method for single crystal furnace, single crystal furnace and computer readable storage medium
Technical Field
The invention relates to the technical field of single crystal pulling, in particular to a charging method for a single crystal furnace, the single crystal furnace and a computer readable storage medium.
Background
In the field of single crystal pulling growth, the current industry mainly uses Czochralski (CZ) pulling technology as a basis, and multiple charging method (RCZ) pulling is an upgrade based on the CZ method, wherein the RCZ pulling needs to use a quartz barrel feeding mode in the feeding process, and multiple quartz barrel feeding is needed, and if the number of pulled single crystal silicon rod segments is excessive, the feeding times are increased in multiple.
During the process of pulling multiple charges, each charge requires manual intervention. The inventors have studied the above-described existing multiple-charge crystal pulling process to find that: in the feeding process, the manual operation is complicated, the time is consumed, silicon is easy to splash, and the productivity is reduced to a great extent.
Disclosure of Invention
The invention provides a charging method for a single crystal furnace, the single crystal furnace and a computer readable storage medium, and aims to solve the problems that in the process of repeatedly charging and pulling crystal, the manual operation is complicated during charging, the time is consumed, silicon is easy to splash, and the productivity is low.
In a first aspect of the present invention, there is provided a charging method for a single crystal furnace, comprising:
Acquiring a preset total feeding mass M1, a first feeding mass M1, a last feeding mass M2 and a single average feeding mass
Figure BDA0003424923770000011
Radius r of the crucible;
controlling a single crystal furnace, and charging for the first time under the condition that a crucible is positioned at an initial crucible position;
subtracting the M1 from M1 and subtracting the M2 to obtain the mass M2 of the material to be distributed;
according to said M2, said
Figure BDA0003424923770000012
Determining the required feeding times of the ingredients to be distributed and the feeding quality of the ingredients to be distributed in each feeding time;
the time when the previous feeding is melted to 80-90% of the mass is determined as the feeding time of the next feeding;
according to Δh=m ≡pi r 2 Rho, determining the height of the crucible which is required to descend and corresponds to each charging time except the first charging time; m is the charging mass of each charging except the first charging, and ρ is the density of the molten silicon;
and controlling the single crystal furnace, descending the crucible by delta H corresponding to the charging time at the charging time of each charging time, and then adding silicon raw materials with charging quality corresponding to the charging time into the crucible until the last charging is finished.
According to the embodiment of the invention, the feeding quality and the feeding time of each feeding time and the required descending height of the crucible of each feeding time can be automatically determined according to the method, repeated feeding is completed without manual intervention, the intelligent degree is high, the manual operation is simple and convenient, and the time is saved. And the moment when the former charging is melted to 80-90% of the mass is determined as the charging moment of the next charging, and silicon is not easy to splash and the silicon melting speed is not reduced in the next charging process. In summary, the embodiment of the invention greatly improves the productivity.
Optionally, said method according to said M2, said
Figure BDA0003424923770000021
Determining the required feeding times of the to-be-dispensed ingredients and the feeding quality of the to-be-dispensed ingredients at each feeding time respectively, wherein the method comprises the following steps:
dividing the M2 by the
Figure BDA0003424923770000022
Obtaining a quotient;
in the case that the quotient is an integer, the quotient is the number of charging times required by the material to be distributed, and the charging masses of the material to be distributed at all charging times are equal respectively and are the same as each other
Figure BDA0003424923770000023
In the case that the quotient is a decimal, rounding the quotient to obtain the number of charges required by the ingredients to be dispensed, distributing the M2 among the number of charges required by the ingredients to be dispensed, and distributing the charging mass of each charge to the same as the number of charges required by the ingredients to be dispensed
Figure BDA0003424923770000024
The absolute values of the differences of (2) are all less than or equal to 8%>
Figure BDA0003424923770000025
Optionally, the distribution is made during the charging mass of each charging pass: the charging quality corresponding to the charging time before the time is greater than or equal to the charging quality corresponding to the charging time after the time; the charge preceding the time is closer to the first charge than the charge following the time.
Optionally, m1 is greater than the charging mass of the material to be distributed at each charging time, and the charging mass of the material to be distributed at each charging time is greater than m2.
Optionally, the time when the previous charge is melted to 80% -90% of the mass is determined as the charging time of the next charge, including:
with t=cm Front part Delta T ≡ (p1+p2) determines the melting time required for the previous charge; the m is Front part The mass added for the previous time; p1 is the heating power of the main heater fed in the previous time of melting, P2 is the heating power of the auxiliary heater fed in the previous time of melting, c is the specific heat capacity of the silicon raw material, and DeltaT is the difference between the temperature of the molten silicon and the temperature of the silicon raw material before being fed into the crucible;
on the basis of the previous feeding time, pushing back the first time to obtain the feeding time of the next adjacent feeding time; the first time is 80% -90% of the melting time required for the previous charging.
Optionally, the preset total feeding mass M1, the first feeding mass M1, the last feeding mass M2 and the single average feeding mass are obtained
Figure BDA0003424923770000031
Before the radius r of the crucible, the method further comprises:
determining the size of the crucible
Figure BDA0003424923770000032
Said->
Figure BDA0003424923770000033
Proportional to the size of the crucible.
Optionally, the preset total feeding mass M1, the first feeding mass M1, the last feeding mass M2 and the single average feeding mass are obtained
Figure BDA0003424923770000034
After the radius r of the crucible, the method further comprises:
alarming and prompting under the condition that M1 is less than M1;
and/or, in case m1 < m2, an alarm prompt;
and/or, at
Figure BDA0003424923770000035
In the event of a warning cue.
Optionally, the P1 is the maximum heating power of the main heater, and the P2 is the maximum heating power of the auxiliary heater.
Alternatively, in the case where the size of the crucible is 28 inches, the
Figure BDA0003424923770000036
28-32 kg; in the case of a crucible size of 32 inches, the +.>
Figure BDA0003424923770000037
33-37 kg; in the case of a crucible size of 36 inches, the +.>
Figure BDA0003424923770000038
38-42 kg.
Alternatively, m1 is 60kg, and m2 is 20kg.
In a second aspect of the present invention, there is provided a charging device for a single crystal furnace, comprising:
the parameter acquisition module is used for acquiring a preset feeding total mass M1, a first feeding mass M1, a last feeding mass M2 and a single average feeding mass
Figure BDA0003424923770000039
Radius r of the crucible;
the primary feeding module is used for controlling the single crystal furnace, and feeding for the first time under the condition that the crucible is positioned at the initial crucible position;
the mass determining module is used for subtracting the M1 from the M1 and subtracting the M2 from the M1 to obtain the mass M2 of the material to be distributed;
a distribution module for distributing the data according to M2 and M
Figure BDA00034249237700000310
Determining the required feeding times of the ingredients to be distributed and the feeding quality of the ingredients to be distributed in each feeding time;
the charging time determining module is used for determining the time when the previous charging is melted to 80% -90% of the mass as the charging time of the next charging time;
a descending height determining module for determining the descending height according to Δh=m≡r 2 Rho, determining the height of the crucible which is required to descend and corresponds to each charging time except the first charging time; m is the charging mass of each charging except the first charging, and ρ is the density of the molten silicon;
and the rest charging modules are used for controlling the single crystal furnace, lowering the crucible by delta H corresponding to each charging time at the charging time of each charging time, and then adding silicon raw materials with charging quality corresponding to the charging time into the crucible until the last charging is finished.
Optionally, the allocation module includes:
shang Zi module for dividing said M2 by said
Figure BDA0003424923770000041
Obtaining a quotient;
a first distribution sub-module, configured to, when the quotient is an integer, make the quotient equal to the required charging times of the to-be-distributed material, where the charging masses of the to-be-distributed material at the charging times are equal, and are the same
Figure BDA0003424923770000042
A second allocation submodule, configured to round the quotient, where the quotient is a decimal, and the rounded result is a number of charging times required by the ingredients to be allocated, allocate the M2 among the number of charging times required by the ingredients to be allocated, and allocate a charging mass of each charging time to the same as the number of charging times required by the ingredients to be allocated
Figure BDA0003424923770000043
The absolute values of the differences of (2) are all less than or equal to 8%>
Figure BDA0003424923770000044
Optionally, the distribution is made during the charging mass of each charging pass: the charging quality corresponding to the charging time before the time is greater than or equal to the charging quality corresponding to the charging time after the time; the charge preceding the time is closer to the first charge than the charge following the time.
Optionally, the feeding time determining module includes:
melting time determination sub-module for determining a melting time of t=cm Front part Delta T ≡ (p1+p2) determines the melting time required for the previous charge; the m is Front part The mass added for the previous time; p1 is the last time before meltingThe heating power of the main heater for feeding, P2 is the heating power of the auxiliary heater fed in the previous time of melting, c is the specific heat capacity of the silicon raw material, and delta T is the difference between the temperature of the molten silicon and the temperature of the silicon raw material before being fed into the crucible;
the charging time determining submodule is used for pushing back the first time on the basis of the previous charging time to obtain the charging time of the adjacent next charging time; the first time is 80% -90% of the melting time required for the previous charging.
Optionally, the apparatus further includes:
a single average charging quality determining module for determining the size of the crucible
Figure BDA0003424923770000045
Said->
Figure BDA0003424923770000046
Proportional to the size of the crucible.
Optionally, the apparatus further includes:
the first alarm module is used for alarming and prompting when M1 is less than M1;
and/or the second alarm module is used for alarming and prompting under the condition that m1 is less than m 2;
and/or a third alarm module for detecting whether the first alarm module is in the process of
Figure BDA0003424923770000051
In the event of a warning cue.
In a third aspect of the present invention, there is provided a single crystal furnace comprising: the device comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory are communicated with each other through the communication bus;
a memory for storing a computer program;
and the processor is used for realizing the steps of any charging method for the single crystal furnace when executing the program stored in the memory.
In a fourth aspect of the present invention, there is provided a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, performs the steps of any of the foregoing charging methods for a single crystal furnace.
The charging device for the single crystal furnace, the single crystal furnace and the computer readable storage medium have the same or similar beneficial effects as the charging method for the single crystal furnace, and in order to avoid repetition, the description is omitted.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows a flow chart of steps of a charging method for a single crystal furnace in an embodiment of the invention;
FIG. 2 shows a schematic diagram of a charging device for a single crystal furnace according to an embodiment of the present invention;
fig. 3 shows a schematic diagram of the architecture of a single crystal furnace in an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 shows a flow chart of steps of a charging method for a single crystal furnace in an embodiment of the invention. The method is applied to the charging stage of the single crystal furnace. Referring to fig. 1, the method includes:
step S1, obtaining a preset feeding total mass M1, a first feeding mass M1, a last feeding mass M2 and a single average feeding mass
Figure BDA0003424923770000061
Radius r of the crucible.
In the process of multi-charging and crystal pulling, after the crystal bar is pulled, a silicon raw material needs to be added into a crucible. The total mass of the silicon raw material which needs to be added into the crucible after the crystal bar is pulled is the preset total mass M1. The mass M1 of the first charge is the mass of the silicon raw material added to the crucible for the first time in the process of adding the silicon raw material of the preset total mass M1 of the charge to the crucible. The mass M2 of the last charge is the mass of the silicon raw material added to the crucible for the last time in the process of adding the silicon raw material with the preset total mass M1 of the charge to the crucible. Single average feed mass
Figure BDA0003424923770000062
The method comprises the following steps: in the process of adding the silicon raw material of the preset total charged mass M1 to the crucible, the remaining charged times expect the mass of the silicon raw material to be added, except for the mass M1 of the first charge and the mass M2 of the last charge. M1, M2, < >>
Figure BDA0003424923770000063
Can be expressed in kg (kilograms).
For different M1, M2,
Figure BDA0003424923770000064
May all be different or the same, and embodiments of the present invention are not particularly limited thereto.
The preset total mass M1 of the charge is typically the mass of the ingot pulled up the previous time. For example, after a 200kg pulled ingot, the preset total mass M1 may be 200kg.
The mass m1 of the first charge, the mass m2 of the last charge, and the single average charge mass
Figure BDA0003424923770000065
May be obtained by manual input or may be obtained automatically based on experience, historical data, related calculation means, etc. This is not particularly limited in the embodiment of the present invention. Crucible potThe radius r of (c) may be stored in advance.
Optionally, m1 is greater than or equal to m2, that is, the mass m1 of the first feeding is greater than or equal to the mass m2 of the last feeding, the heat in the single crystal furnace is relatively lower than that of other times during the first feeding, and the silicon raw material is fed for multiple times for the first time, so that silicon leakage can be prevented. The last time the silicon raw material added is melted is the temperature adjusting stage, the last time the silicon raw material is added is less, the melting time of the last time the silicon raw material added is shorter, the heat required by the melting is also less, the temperature adjusting is facilitated, the time required in the temperature adjusting process is reduced, and the productivity can be improved.
Optionally, the mass m1 of the first feeding can be 60kg, the possibility of silicon leakage is smaller, the mass m2 of the last feeding can be 20kg, the melting time of the silicon raw material added last is shorter, the heat required by the melting is less, the temperature adjustment is facilitated, and the time required in the temperature adjustment process is reduced.
Optionally, in obtaining a single average feed mass
Figure BDA0003424923770000066
Before, still include: determining the size of the crucible
Figure BDA0003424923770000067
Said->
Figure BDA0003424923770000068
Proportional to the size of the crucible. That is to say that the single average charge mass +.>
Figure BDA0003424923770000071
The specific m is proportional to the size of the crucible, namely the larger the size of the crucible is, the determined single average charging mass is +.>
Figure BDA0003424923770000072
The larger is, and thus ∈>
Figure BDA0003424923770000073
The determined charging materials to be distributed in each charging timeThe amount is also matched with the size of the crucible, the melting efficiency is high, and silicon is not easy to leak.
Alternatively, in the case of a crucible having a size of 28 inches,
Figure BDA0003424923770000074
28-32 kg. In the case of a crucible size of 32 inches, < >>
Figure BDA0003424923770000075
33-37 kg. In the case of a crucible size of 36 inches, < >>
Figure BDA0003424923770000076
38-42 kg, made of->
Figure BDA0003424923770000077
The determined material to be distributed is more matched with the size of the crucible in the charging quality of each charging time, the melting efficiency is higher, and silicon leakage is not easy.
Optionally, after the preset total feeding mass M1 is obtained, if M1 is smaller than M1, an alarm is given, that is, the required silicon raw material to be added is not enough for the first feeding mass, the data may be wrong, or the situation is not applicable to the method, and the alarm can be given, so that the error is corrected in time.
Optionally, after the first fed mass m1 and the last fed mass m2 are obtained, under the condition that m1 is smaller than m2, an alarm is given, that is, the last fed mass is larger than the first fed mass, which may cause silicon leakage and is unfavorable for temperature adjustment, and the time required in the temperature adjustment process is longer, so that an alarm can be given, and errors can be corrected in time.
Alternatively, in
Figure BDA0003424923770000078
In the case of (1) an alarm, which may result in a final charge of greater mass than the silicon material to be fed for each charge of the batch to be dispensed, which may also result in a silicon leak, which is also detrimental to the temperature regulation, and the temperature regulation processThe time required by the method is long, and the alarm prompt can be given, so that the error can be corrected in time.
The alarm may be a visual alarm, an audible alarm, etc., for example, the alarm may be a highlighting. In the embodiment of the present invention, the mode of the alarm prompt is not particularly limited.
And S2, controlling the single crystal furnace, and feeding for the first time under the condition that the crucible is positioned at the initial crucible position.
The upper edge of the crucible is flush with the upper edge of the main heater, so that the crucible is positioned at the initial crucible position. And under the condition that the crucible is positioned at the initial crucible position, charging for the first time, wherein the mass of the charging for the first time is m1.
For example, for the above example, if 60kg of silicon raw material is first charged into the crucible, 60kg is first charged with the crucible located at the starting crucible position.
And S3, subtracting the M1 from the M1, and subtracting the M2 to obtain the mass M2 of the material to be distributed.
During the addition of the silicon feedstock of a preset total mass of charge M1 to the crucible, M1-m2=m2. The mass M2 of the material to be distributed is as follows: in the process of adding the silicon raw material with the preset total added mass M1 into the crucible, the total mass of the silicon raw material which is needed to be added in the rest feeding times is except for the mass M1 which is added for the first time and the mass M2 which is added for the last time.
For example, if M1 is 200kg, M1 is 60kg, and M2 is 20kg, the mass m2=200-60-20=120 kg of the batch to be dispensed except for the first and last time during the process of adding the silicon raw material of the preset total mass M1 to the crucible.
Step S4, according to the M2 and the
Figure BDA0003424923770000081
And determining the required feeding times of the ingredients to be distributed and the feeding quality of the ingredients to be distributed in each feeding time.
The material to be distributed has the feeding quality of each feeding time and the single average feeding quality
Figure BDA0003424923770000082
Equal, or, in a single average feed mass +.>
Figure BDA0003424923770000083
The sum of the feed masses of the material to be dispensed at each feed pass is equal to the mass M2 of the material to be dispensed.
For example, for the above example, if the single average charge mass is obtained
Figure BDA0003424923770000084
The mass of the materials to be distributed in each feeding time can be 30kg, and the required feeding time of the materials to be distributed can be 4 times. Then, the first charging and the last charging are added, and the total charging times are 6 times in the process of adding the silicon raw material with the preset total charging mass M1 into the crucible. That is, the total mass M1 of the preset charge was 200kg, the total charge was 6 times, the mass M1 of the first charge was 60kg, the mass of each of the 2 nd, 3 rd, 4 th and 5 th charges of the silicon raw material to the crucible was 30kg, and the mass of the last charge of the silicon raw material to the crucible was 20kg.
Optionally, this step S4 may include the following sub-steps:
substep S41 dividing said M2 by said
Figure BDA0003424923770000085
The quotient is obtained.
For example, for the above example, the mass M2 of the material to be dispensed is 120kg, the single average charge mass obtained
Figure BDA0003424923770000086
30kg, then->
Figure BDA0003424923770000087
For another example, if M1 is 220kg, M1 is 60kg, and M2 is 20kg, the mass m2=220-60-20=140 kg of the batch to be dispensed is added to the crucible during the addition of the silicon raw material of the preset total mass M1, except for the first and last time. Single average of the acquisitionsCharging mass
Figure BDA0003424923770000088
30kg, then->
Figure BDA0003424923770000089
In the sub-step S42, in the case that the quotient is an integer, the quotient is the number of charging times required by the ingredients to be distributed, and the charging masses of the ingredients to be distributed at the charging times are equal, and are the same
Figure BDA0003424923770000091
Under the condition that the quotient is an integer, the quotient is the charging times required by the ingredients to be distributed, and the charging masses of the ingredients to be distributed at all charging times are equal respectively and are all
Figure BDA0003424923770000092
Substep S43, rounding the quotient, where the quotient is a fraction, the rounded result being the number of charges required for the ingredients to be dispensed, and distributing the M2 among the number of charges required for the ingredients to be dispensed, and distributing the charging mass at each charge, with the
Figure BDA0003424923770000093
The absolute values of the differences of (2) are all less than or equal to 8%>
Figure BDA0003424923770000094
Since the number of times cannot be a fraction, if the quotient is a fraction, the quotient needs to be rounded, and the rounding process may be rounded to a large value, rounded to a small value, rounded to a round, or the like, which is not particularly limited in the embodiment of the present invention. The rounded result is the number of charges required for the material to be dispensed. Then the mass of the material to be distributed is distributed in the required feeding times of the material to be distributed, and the feeding mass distributed in each feeding time is equal to the mass of the material to be distributed
Figure BDA0003424923770000095
The absolute values of the differences of (2) are all less than or equal to 8%>
Figure BDA0003424923770000096
Therefore, the weight of the materials to be distributed in each feeding time is uniform, the melting efficiency is high, and silicon is not easy to splash or leak.
For example, for the above example, if the quotient is 4.667,4.667, the rounding result may be 5. Then 140kg is distributed in 5 times, and how to distribute is not limited in particular, only the feeding quality of each distribution is ensured, and
Figure BDA0003424923770000097
the absolute values of the differences of (2) are all less than or equal to 8%>
Figure BDA0003424923770000098
And (3) obtaining the product. For example, the distribution may be 28kg at 5 times.
Optionally, in sub-step S43, during the feed quality of each feed: and the charging mass corresponding to the charging time before the time is larger than or equal to the charging mass corresponding to the charging time after the time. The charging times at the front time are closer to the first charging than the charging times at the rear time. That is, the material to be distributed is distributed in each charging time to ensure the charging quality of each distribution and
Figure BDA0003424923770000099
the absolute values of the differences of (2) are all less than or equal to 8%>
Figure BDA00034249237700000910
Under the condition of (1), relatively more feeding quality can be distributed for the feeding time close to the first feeding, the possibility of silicon leakage can be reduced, relatively less feeding quality can be distributed for the feeding time close to the last feeding, the temperature adjustment is facilitated, and the time required in the temperature adjustment process is reduced.
Optionally, m1 is greater than the feeding mass of the material to be distributed at each feeding time, and the feeding mass of the material to be distributed at each feeding time is greater than m2, that is, the mass m1 of the first feeding is greater than or equal to the feeding mass of each of the rest feeding times, so that silicon leakage can be prevented. The feeding quality of each feeding time distributed in the middle is respectively larger than that of the silicon raw material added last time, thus being beneficial to temperature adjustment, reducing the time required in the temperature adjustment process and improving the productivity.
And S5, determining the moment of melting the previous charge to 80% -90% of the mass as the charging moment of the next adjacent charge.
When the time when the previous charging is melted to 80-90% of the mass is determined as the charging time of the next charging time, the remaining unmelted silicon raw material in the crucible is 10-20% of the mass of the previous charging at the time of the next charging, so that the possibility of silicon splashing can be reduced in a great probability, and the silicon melting speed is not reduced.
For example, for the above example, if the previous time is the first time, the next subsequent time is the second time. If 60kg of the silicon raw material is charged into the crucible for the first time, the time at which 48-54kg of the silicon raw material is melted in the crucible is taken as the charging time of the second charging.
Optionally, the step S5 may include the following sub-steps:
substep S51, with t=cm Front part Delta T ≡ (p1+p2) determines the melting time required for the previous charge; the m is Front part The mass added for the previous time; p1 is the heating power of the main heater charged before melting, P2 is the heating power of the sub-heater charged before melting, c is the specific heat capacity of the silicon raw material, and DeltaT is the difference between the temperature of the molten silicon and the temperature of the silicon raw material before charging into the crucible.
The previous charging time is closer to the first charging than the next charging time. The heating power P1 of the main heater charged before melting is kept unchanged during the process of melting the previous charge, the heating power P2 of the auxiliary heater charged before melting is kept unchanged during the process of melting the previous charge, and then the melting rate of the previous charge isEqual. The specific heat capacity c of the silicon feedstock was 700J/(kg.K). The temperature of the molten silicon is typically 1410 c, the melting point of silicon. The temperature of the silicon feedstock prior to introduction into the crucible is typically room temperature. cm Front part Δt is the amount of heat required to completely melt the silicon raw material added last time. In this formula, the unit of temperature is converted to be uniform. Cm of heat required for complete melting of the previously applied silicon feedstock Front part The time required to melt all of the silicon raw material charged before or the melting time required for the previous charge is obtained by dividing Δt by (p1+p2).
Alternatively, P1 may be the maximum heating power of the main heater, P2 may be the maximum heating power of the sub-heater, so that the heating power of the melted silicon raw material is maximum, the melting time may be shortened, and the production efficiency may be improved.
Step S52, on the basis of the previous feeding time, pushing back the first time to obtain the feeding time of the next adjacent feeding time; the first time is 80% -90% of the melting time required for the previous charging.
The melting rates of the previous feeds are equal, so that 80% -90% of the melting time required for the previous feeds is equivalent to 80% -90% of the mass of the previous feeds. On the basis of the previous charging time, the first time is pushed back to obtain the charging time of the next charging time, and the next charging time is proper, so that silicon splashing can be reduced with high probability.
For example, if 60kg is fed first, the next and subsequent times are the second times. If the silicon raw material first added to the crucible on day 10:10:20 of month 10 and 20 of 2021 is 60kg, t=cm Front part ΔT/in (P1+P2), m Front part Namely 60kg, and if the time required for melting 60kg of the silicon raw material is 60 minutes according to the formula, 80% -90% of 60 minutes is 48-54 minutes. Then, the feeding time of the second feeding time can be obtained by pushing for 48-54 minutes on the basis of the first feeding time, namely, the feeding time of the second feeding time is as follows: any time between 10:58:20 on 10 month 20 of 2021 and 11:04:20 on 10 month 20 of 2021. The second addition may be made by the addition of 2021, 10/20/10/50/20/10/20/2021/10/11/04/20Time of day.
Step S6, according to Δh=m≡pi r 2 Rho, determining the height of the crucible which is required to descend and corresponds to each charging time except the first charging time; and m is the charging mass of each charging except the first charging, and ρ is the density of the molten silicon.
r is the radius of the crucible, pi r 2 P is the density of the molten silicon, which is the cross-sectional area of the crucible. M is the charging mass of each charging except the first charging, delta H is the height of the rising molten silicon liquid level after all charging except the first charging is completely melted, and the crucible is firstly lowered before each charging except the first charging, so that the silicon raw material added this time is just in the optimal heating area, and the silicon melting efficiency is improved.
For example, for the above example, the height at which the crucible needs to be lowered at the time of the second charge is determined. If the silicon raw material added to the crucible for the second time is 30kg, after all the materials added for the second time are melted, the height of the elevation of the molten silicon liquid level is 30kg corresponding to delta H, and the crucible is lowered by 30kg corresponding to delta H before the silicon raw material of 30kg is added to the crucible for the second time.
And S7, controlling the single crystal furnace, descending the crucible by delta H corresponding to the charging times at the charging time of each charging time, and then adding silicon raw materials with charging quality corresponding to the charging times into the crucible until the last charging is finished.
At the charging time of each charging time, the crucible is lowered by delta H corresponding to the charging time, and then the silicon raw material with the charging quality corresponding to the charging time is added into the crucible until the last charging is finished. The feeding quality and the feeding time of each feeding time and the required descending height of the crucible of each feeding time are automatically determined, repeated feeding is completed without manual intervention, manual operation is simple and convenient, time is saved, and productivity is improved to a great extent.
For example, for the above example, if 60kg of silicon raw material is first charged into the crucible, the first charge is performed with the crucible located at the starting crucible position. After the first charging, the moment of melting 48-54kg of silicon raw material in the crucible is the charging of the second charging And (5) material moment. If the mass of the second charge into the crucible is 30kg, the height of the elevation of the molten silicon liquid level after the second charge is completely melted is Δh, Δh=30+.pi.r 2 ρ, at the time when 48-54kg of silicon raw material was melted in the crucible after the first charging, the crucible was lowered by 30kg of corresponding Δh, and then 30kg of silicon raw material was charged into the crucible. After the second charge, the time at which 24-27kg of silicon feedstock was melted in the crucible was the time of the third charge. At the time when 24-27kg of silicon raw material was melted in the crucible after the second charging, the crucible was lowered by 30kg of corresponding Δh, and then 30kg of silicon raw material was charged into the crucible. After the third charging, the time when 24-27kg of silicon raw material is melted in the crucible is the charging time of the fourth charging, and after the third charging, the crucible is lowered by 30kg of corresponding delta H, and then 30kg of silicon raw material is added into the crucible. After the fourth charging, the time when 24-27kg of silicon raw material is melted in the crucible is the charging time of the fifth charging, and after the fourth charging, the crucible is lowered by 30kg of corresponding delta H, and then 30kg of silicon raw material is added into the crucible. After the fifth charging, the time when 24-27kg of silicon raw material is melted in the crucible is the charging time of the sixth charging, and after the fifth charging, the crucible is lowered by 20kg of corresponding delta H, and then 20kg of silicon raw material is added into the crucible, wherein the last charging is the final charging, and the charging method is finished.
The embodiment of the invention also provides a charging device for the single crystal furnace, and fig. 2 shows a schematic architecture diagram of the charging device for the single crystal furnace in the embodiment of the invention. Referring to fig. 2, the charging device 100 for a single crystal furnace includes:
a parameter obtaining module 101 for obtaining a preset total charging mass M1, a first charging mass M1, a last charging mass M2, and a single average charging mass
Figure BDA0003424923770000121
Radius r of the crucible.
And a primary charging module 102 for controlling the single crystal furnace, wherein the primary charging is performed under the condition that the crucible is positioned at the initial crucible position.
The mass determining module 103 is configured to subtract M1 from M1 and subtract M2 from M1 to obtain mass M2 of the material to be dispensed.
A distribution module 104 for distributing the data according to M2 and M
Figure BDA0003424923770000131
And determining the required feeding times of the ingredients to be distributed and the feeding quality of the ingredients to be distributed in each feeding time.
The charging time determining module 105 is configured to determine a time when the previous charging is melted to 80% -90% of the mass, as a charging time of an adjacent subsequent charging time.
A descent height determination module 106 for determining a descent height according to Δh=m++pi r 2 Rho, determining the height of the crucible which is required to descend and corresponds to each charging time except the first charging time; and m is the charging mass of each charging except the first charging, and ρ is the density of the molten silicon.
And the rest charging modules 107 are used for controlling the single crystal furnace, lowering the crucible by delta H corresponding to the charging times at the charging time of each charging time, and then adding silicon raw materials with charging quality corresponding to the charging times into the crucible until the last charging is finished.
Optionally, the allocation module 104 may include:
shang Zi module for dividing said M2 by said
Figure BDA0003424923770000132
Obtaining a quotient;
a first distribution sub-module, configured to, when the quotient is an integer, make the quotient equal to the required charging times of the to-be-distributed material, where the charging masses of the to-be-distributed material at the charging times are equal, and are the same
Figure BDA0003424923770000133
A second allocation sub-module for taking the quotient in case the quotient is a decimalThe whole and rounded result is the number of charging times required by the ingredients to be distributed, the M2 is distributed in the number of charging times required by the ingredients to be distributed, and the charging quality of each charging time is distributed with the weight of the materials to be distributed
Figure BDA0003424923770000134
The absolute values of the differences of (2) are all less than or equal to 8%>
Figure BDA0003424923770000135
Optionally, the distribution is made during the charging mass of each charging pass: the charging quality corresponding to the charging time before the time is greater than or equal to the charging quality corresponding to the charging time after the time; the charge preceding the time is closer to the first charge than the charge following the time.
Optionally, the feeding time determining module 105 may include:
melting time determination sub-module for determining a melting time of t=cm Front part Delta T ≡ (p1+p2) determines the melting time required for the previous charge; the m is Front part The mass added for the previous time; p1 is the heating power of the main heater fed in the previous time of melting, P2 is the heating power of the auxiliary heater fed in the previous time of melting, c is the specific heat capacity of the silicon raw material, and DeltaT is the difference between the temperature of the molten silicon and the temperature of the silicon raw material before being fed into the crucible;
the charging time determining submodule is used for pushing back the first time on the basis of the previous charging time to obtain the charging time of the adjacent next charging time; the first time is 80% -90% of the melting time required for the previous charging.
Optionally, the apparatus further includes:
a single average charging quality determining module for determining the size of the crucible
Figure BDA0003424923770000141
Said->
Figure BDA0003424923770000142
Proportional to the size of the crucible.
Optionally, the apparatus further includes:
the first alarm module is used for alarming and prompting when M1 is less than M1;
and/or the second alarm module is used for alarming and prompting under the condition that m1 is less than m 2;
and/or a third alarm module for detecting whether the first alarm module is in the process of
Figure BDA0003424923770000143
In the event of a warning cue.
The feeding device for the single crystal furnace can refer to the feeding method for the single crystal furnace, has the same or similar beneficial effects, and is not repeated here.
Fig. 3 shows a schematic diagram of the architecture of a single crystal furnace in an embodiment of the invention. The embodiment of the invention also provides a single crystal furnace, as shown in fig. 3, comprising a processor 21, a communication interface 22, a memory 23 and a communication bus 24, wherein the processor 21, the communication interface 22 and the memory 23 complete the communication with each other through the communication bus 24,
a memory 23 for storing a computer program;
the processor 21 is configured to execute the program stored in the memory 23 to implement any one of the steps of the charging method for a single crystal furnace.
For example, the processor 21 is configured to execute the program stored in the memory 23, and implement the following steps:
acquiring a preset total feeding mass M1, a first feeding mass M1, a last feeding mass M2 and a single average feeding mass
Figure BDA0003424923770000144
Radius r of the crucible;
controlling a single crystal furnace, and charging for the first time under the condition that a crucible is positioned at an initial crucible position;
subtracting the M1 from M1 and subtracting the M2 to obtain the mass M2 of the material to be distributed;
According to said M2, said
Figure BDA0003424923770000145
Determining the required feeding times of the ingredients to be distributed and the feeding quality of the ingredients to be distributed in each feeding time;
the time when the previous feeding is melted to 80-90% of the mass is determined as the feeding time of the next feeding;
according to Δh=m ≡pi r 2 Rho, determining the height of the crucible which is required to descend and corresponds to each charging time except the first charging time; m is the charging mass of each charging except the first charging, and ρ is the density of the molten silicon;
and controlling the single crystal furnace, descending the crucible by delta H corresponding to the charging time at the charging time of each charging time, and then adding silicon raw materials with charging quality corresponding to the charging time into the crucible until the last charging is finished.
The communication bus mentioned by the single crystal furnace can be a peripheral component interconnect standard (Peripheral Component Interconnect, abbreviated as PCI) bus or an extended industry standard architecture (Extended Industry Standard Architecture, abbreviated as EISA) bus, etc. The communication bus may be classified as an address bus, a data bus, a control bus, or the like. For ease of illustration, the figures are shown with only one bold line, but not with only one bus or one type of bus.
The communication interface is used for communication between the single crystal furnace and other equipment.
The memory may include random access memory (Random Access Memory, RAM) or non-volatile memory (non-volatile memory), such as at least one disk memory. Optionally, the memory may also be at least one memory device located remotely from the aforementioned processor.
The processor may be a general-purpose processor, including a central processing unit (Central Processing Unit, CPU for short), a network processor (Network Processor, NP for short), etc.; but also digital signal processors (Digital Signal Processing, DSP for short), application specific integrated circuits (Application Specific Integrated Circuit, ASIC for short), field-programmable gate arrays (Field-Programmable Gate Array, FPGA for short) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.
In yet another embodiment of the present invention, a computer readable storage medium having instructions stored therein that, when run on a computer, cause the computer to perform the steps of the charging method for a single crystal furnace of any of the previous embodiments.
In yet another embodiment of the present invention, there is also provided a computer program product containing instructions that, when run on a computer, cause the computer to perform the steps of the charging method for a single crystal furnace of any of the previous embodiments.
In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, produces a flow or function in accordance with embodiments of the present invention, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a computer network, or other programmable apparatus. The computer instructions may be stored in or transmitted from one computer-readable storage medium to another, for example, by wired (e.g., coaxial cable, optical fiber, digital Subscriber Line (DSL)), or wireless (e.g., infrared, wireless, microwave, etc.). The computer readable storage medium may be any available medium that can be accessed by a computer or a data storage device such as a server, data center, etc. that contains an integration of one or more available media. The usable medium may be a magnetic medium (e.g., floppy Disk, hard Disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid State Disk (SSD)), etc.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts referred to are not necessarily all required for the embodiments of the present application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present invention may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) comprising instructions for causing a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present invention.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.

Claims (10)

1. The charging method for the single crystal furnace is characterized by comprising the following steps of:
acquiring a preset total feeding mass M1, a first feeding mass M1, a last feeding mass M2 and a single average feeding mass
Figure FDA0003424923760000011
Radius r of the crucible;
controlling a single crystal furnace, and charging for the first time under the condition that a crucible is positioned at an initial crucible position;
subtracting the M1 from M1 and subtracting the M2 to obtain the mass M2 of the material to be distributed;
according to said M2, said
Figure FDA0003424923760000012
Determining the required feeding times of the ingredients to be distributed and the feeding quality of the ingredients to be distributed in each feeding time;
the time when the previous feeding is melted to 80-90% of the mass is determined as the feeding time of the next feeding;
according to Δh=m ≡pi r 2 Rho, determining the height of the crucible which is required to descend and corresponds to each charging time except the first charging time; m is the charging mass of each charging except the first charging, and ρ is the density of the molten silicon;
and controlling the single crystal furnace, descending the crucible by delta H corresponding to the charging time at the charging time of each charging time, and then adding silicon raw materials with charging quality corresponding to the charging time into the crucible until the last charging is finished.
2. The charging method for a single crystal furnace according to claim 1, wherein the charging method for a single crystal furnace according to M2 is characterized in that
Figure FDA0003424923760000013
Determining the required feeding times of the to-be-dispensed ingredients and the feeding quality of the to-be-dispensed ingredients at each feeding time respectively, wherein the method comprises the following steps:
dividing the M2 by the
Figure FDA0003424923760000014
Obtaining a quotient;
in the case that the quotient is an integer, the quotient is the number of charging times required by the material to be distributed, and the charging masses of the material to be distributed at all charging times are equal respectively and are the same as each other
Figure FDA0003424923760000015
In the case that the quotient is a decimal, rounding the quotient to obtain the number of charges required by the ingredients to be dispensed, distributing the M2 among the number of charges required by the ingredients to be dispensed, and distributing the charging mass of each charge to the same as the number of charges required by the ingredients to be dispensed
Figure FDA0003424923760000016
The absolute values of the differences of (2) are all less than or equal to 8%>
Figure FDA0003424923760000017
3. The charging method for a single crystal furnace according to claim 2, wherein,
distributing the charging mass in each charging time: the charging quality corresponding to the charging time before the time is greater than or equal to the charging quality corresponding to the charging time after the time; the charge preceding the time is closer to the first charge than the charge following the time.
4. The charging method for a single crystal furnace according to any one of claims 1 to 3, wherein m1 is larger than the charging mass of the material to be distributed at each charging time, and the charging mass of the material to be distributed at each charging time is larger than m2.
5. A charging method for a single crystal furnace according to any one of claims 1 to 3, wherein the time at which the previous charge is melted to 80% -90% by mass is determined as the charging time of the next adjacent charge, comprising:
with t=cm Front part Delta T ≡ (p1+p2) determines the melting time required for the previous charge; the m is Front part The mass added for the previous time; p1 is the heating power of the main heater fed in the previous time of melting, P2 is the heating power of the auxiliary heater fed in the previous time of melting, c is the specific heat capacity of the silicon raw material, and DeltaT is the difference between the temperature of the molten silicon and the temperature of the silicon raw material before being fed into the crucible;
on the basis of the previous feeding time, pushing back the first time to obtain the feeding time of the next adjacent feeding time; the first time is 80% -90% of the melting time required for the previous charging.
6. A charging method for a single crystal furnace according to any one of claims 1 to 3, wherein the preset total charging mass M1, the first charging mass M1, the last charging mass M2, and the single average charging mass are obtained
Figure FDA0003424923760000021
Before the radius r of the crucible, the method further comprises:
determining the size of the crucible
Figure FDA0003424923760000022
Said- >
Figure FDA0003424923760000023
Proportional to the size of the crucible.
7. A furnace charge according to any one of claims 1 to 3The material method is characterized in that the preset feeding total mass M1, the first feeding mass M1, the last feeding mass M2 and the single average feeding mass are obtained
Figure FDA0003424923760000024
After the radius r of the crucible, the method further comprises:
alarming and prompting under the condition that M1 is less than M1;
and/or, in case m1 < m2, an alarm prompt;
and/or, at
Figure FDA0003424923760000025
In the event of a warning cue.
8. The method for charging a single crystal furnace according to claim 5, wherein P1 is a maximum heating power of the main heater, and P2 is a maximum heating power of the sub-heater.
9. A single crystal growing furnace, comprising: the device comprises a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory are communicated with each other through the communication bus;
a memory for storing a computer program;
a processor for implementing the steps of the charging method for a single crystal furnace according to any one of claims 1 to 8 when executing a program stored in a memory.
10. A computer-readable storage medium, on which a computer program is stored, characterized in that the program, when being executed by a processor, implements the steps of the charging method for a single crystal furnace according to any one of claims 1 to 8.
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