CN116288270A - Gas injection tube and ONO furnace tube deposition device - Google Patents
Gas injection tube and ONO furnace tube deposition device Download PDFInfo
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- CN116288270A CN116288270A CN202310171791.3A CN202310171791A CN116288270A CN 116288270 A CN116288270 A CN 116288270A CN 202310171791 A CN202310171791 A CN 202310171791A CN 116288270 A CN116288270 A CN 116288270A
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- gas
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- ono
- tube
- injection
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- 238000002347 injection Methods 0.000 title claims abstract description 81
- 239000007924 injection Substances 0.000 title claims abstract description 81
- 230000008021 deposition Effects 0.000 title claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 75
- 239000012495 reaction gas Substances 0.000 claims abstract description 29
- 230000007704 transition Effects 0.000 claims abstract description 17
- 238000005137 deposition process Methods 0.000 claims abstract description 8
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 7
- 230000009257 reactivity Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 23
- 239000010408 film Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000376 reactant Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention provides a gas injection pipe and an ONO furnace tube deposition device, which are used for improving the uniformity of a film in the ONO furnace tube deposition process, wherein the gas injection pipe comprises a preheating section, a transition section and an injection section which are arranged in a U shape, the top end of the preheating section is connected with the top end of the injection section through the transition section, the bottom end of the preheating section is provided with an air inlet for reaction gas to enter, and the injection section is provided with a plurality of air outlets for introducing the reaction gas into a cavity of the ONO furnace tube along the height direction. When the ONO furnace tube is used for film deposition, reaction gas enters a preheating section through an air inlet, enters an injection section after being preheated by the preheating section, and enters a cavity of the ONO furnace tube through an air outlet on the injection section, so that the reaction gas is preheated in the process, and the problem of uniformity of film quality caused by difference of concentration and reactivity of the reaction gas at different positions of a wafer boat in the cavity can be effectively solved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a gas injection tube and an ONO furnace tube deposition device.
Background
The ONO film layer is formed by overlapping three layers of an oxide layer, a nitride layer and an oxide layer and is generally applied to a gate dielectric layer of a gate structure. The nitride layer and the top oxide layer in the ONO film layer are formed by a furnace tube low-pressure chemical vapor deposition process, and the bottom oxide layer is formed by a thermal oxidation process. An ONO film layer is typically formed on a wafer composed of a semiconductor substrate, a furnace tube typically includes a tube wall and a process chamber surrounded by the tube wall, and multiple wafers can be placed in the furnace tube to simultaneously grow corresponding thin films on the surfaces of the multiple wafers.
In the ONO furnace tube deposition process, a plurality of wafers are firstly loaded into a wafer boat and placed in a chamber of a deposition process to be performed, the pressure and temperature in the furnace tube are strictly controlled, then the wafers are subjected to chemical vapor deposition, reaction gas is released into the chamber through a gas injection device, and the gas injection tube 1 is of a single vertical tube structure, as shown in fig. 1. Due to N as a reactant gas in the ONO deposition process 2 The O decomposition reaction is greatly influenced by temperature, the temperature of the gas is lower when the gas is introduced into the lower part of the cavity through the gas injection pipe, and N 2 The decomposition rate of O is slow, and the temperature is higher when the O is introduced into the upper part of the cavity, N 2 The O decomposition rate is high, so that N exists from top to bottom in the furnace tube 2 The difference of the O decomposition speeds causes the difference of N and O of the film layers from top to bottom of the wafer boat, the proportion of N and O of the film quality grown by the silicon wafers above the wafer boat is small, and the proportion of N and O of the film quality grown by the silicon wafers below the wafer boat is large, so that the uniformity of the film quality of the silicon wafers at different positions is different.
Disclosure of Invention
The invention aims to provide a gas injection pipe and an ONO furnace tube deposition device, which solve the problem that silicon wafer film uniformity is different when reaction gas injection is carried out in gas injection in the existing ONO furnace tube deposition process.
In order to achieve the above purpose, the invention provides a gas injection pipe for improving the uniformity of film quality in an ONO furnace tube deposition process, which comprises a preheating section, a transition section and an injection section which are arranged in a U shape, wherein the top end of the preheating section is connected with the top end of the injection section through the transition section, the bottom end of the preheating section is provided with an air inlet for reaction gas to enter, and the injection section is provided with a plurality of air outlets for introducing the reaction gas into a cavity of the ONO furnace tube along the height direction.
Optionally, the size of the air outlet gradually increases from top to bottom along the height direction.
Optionally, the air outlets are uniformly distributed along the height direction.
Optionally, the air outlet is a round hole.
Optionally, the number of the air inlets is at least two.
Optionally, the number of the air inlets is two, wherein one air inlet is used for supplying N 2 O and NH 3 And the other air inlet is used for allowing DCS air to enter.
Optionally, the transition section is a straight pipe or an arc-shaped bent pipe.
Optionally, the preheating section and the injection section are both straight pipes.
Optionally, the preheating section, the transition section and the injection section are all made of quartz.
Based on the same inventive concept, the invention also provides an ONO furnace tube deposition device, which comprises the ONO furnace tube and the gas injection tube, wherein the gas injection tube is fixed on the inner side wall of the cavity of the ONO furnace tube.
In the gas injection pipe and the ONO furnace tube deposition device provided by the invention, when the ONO furnace tube is utilized for film deposition, the reaction gas enters the preheating section through the gas inlet, enters the injection section after being preheated by the preheating section, and enters the cavity of the ONO furnace tube through the gas outlet on the injection section, and in the process, the reaction gas is preheated, so that the reaction activity and the flow rate of each end gas are kept consistent, the problem of film uniformity caused by the difference of the concentration and the reaction activity of the reaction gas at different positions of the wafer boat in the cavity can be effectively solved, and the utilization rate of the wafer boat is also improved.
Drawings
Those of ordinary skill in the art will appreciate that the figures are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention. Wherein:
FIG. 1 is a schematic view of a prior art gas injection tube;
fig. 2 is a schematic structural diagram of a gas injection pipe according to an embodiment of the present invention.
In the accompanying drawings:
1-a gas injection tube;
10-a preheating section; 20-transition section; 30-an injection section; 40-air inlet; 50-air outlet.
Detailed Description
The invention will be described in further detail with reference to the drawings and the specific embodiments thereof in order to make the objects, advantages and features of the invention more apparent. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are shown only in connection with the present disclosure for the understanding and reading of the present disclosure, and are not intended to limit the scope of the invention, which is defined by the appended claims, and any structural modifications, proportional changes, or dimensional adjustments, which may be made by the present disclosure, should fall within the scope of the present disclosure under the same or similar circumstances as the effects and objectives attained by the present invention.
As used in this disclosure, the singular forms "a," "an," and "the" include plural referents unless the content clearly dictates otherwise. As used in this disclosure, the term "or" is generally employed in its sense including "and/or" unless the content clearly dictates otherwise. As used in this disclosure, the term "plurality" is generally employed in its sense including "at least one" unless the content clearly dictates otherwise. As used in this disclosure, the term "at least two" is generally employed in its sense including "two or more", unless the content clearly dictates otherwise. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", "a third" may include one or at least two such features, either explicitly or implicitly.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "secured" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a gas injection pipe according to an embodiment of the invention. The embodiment provides a gas injection pipe for improving film uniformity in an ONO furnace tube deposition process, which comprises a preheating section 10, a transition section 20 and an injection section 30 which are arranged in a U shape, wherein the top end of the preheating section 10 is connected with the top end of the injection section 30 through the transition section 20, the bottom end of the preheating section 10 is provided with an air inlet 40 for reaction gas to enter, and the injection section 30 is provided with a plurality of air outlets 50 for introducing the reaction gas into a cavity of the ONO furnace tube along the height direction.
When the ONO furnace tube is used for film deposition, reaction gas enters the preheating section 10 through the air inlet 40, enters the injection section 30 after being preheated by the preheating section 10, and enters the cavity of the ONO furnace tube through the air outlet 50 on the injection section 30, and in the process, the reaction gas is preheated, so that the reactivity and the flow of the gases at each end are kept consistent, the problem of film uniformity caused by the difference of the concentration and the reactivity of the reaction gas at different positions of the wafer boat in the cavity can be effectively solved, and meanwhile, the utilization rate of the wafer boat is also improved.
Preferably, the size of the air outlet 50 increases gradually from top to bottom in the height direction. In this embodiment, the injection section 30 is provided with a plurality of gas outlets 50 for introducing the reaction gas into the cavity of the ONO furnace tube along the height direction, so that the problem of uniformity of the film caused by large gas flow at the upper end and small gas flow at the lower end of the gas injection tube can be effectively solved by gradually increasing the size of the gas outlets 50 from top to bottom along the height direction.
Preferably, the air outlets 50 are uniformly distributed in the height direction. The area of the reaction gas output by the gas injection pipe can be increased by adopting a uniform distribution mode, and the working efficiency of the gas injection pipe is improved.
In this embodiment, the air outlet 50 is a circular hole. It should be understood that the number, size and spacing between adjacent air outlets 50 are not limited, and may be adjusted according to practical requirements.
Preferably, the number of the air inlets 40 is at least two. In this embodiment, there are two air inlets 40, one of the air inlets 40 is provided with N 2 O and NH 3 Into the reactor, and the other gas inlet 40 is used for entering DCS (dichlorosilane) gas. In this embodiment, the reaction gas introduced into the gas injection pipe is generally a gas containing N, O, H and other elements, and the gas injection pipe provided by the present invention is not particularly limited to the introduced reaction gas.
Alternatively, the transition section 20 is a straight pipe or an arc-shaped curved pipe. In this embodiment, the transition section 20 is used in the preheating section 10 and the injection section 30, the preheating section 10 and the injection section 30 are both straight pipes, the reactant gas is preheated by the preheating section 10, the reactant gas fully preheated can smoothly enter the injection section 30 from the transition section 20, after the reactant gas in the preheating section 10 is fully preheated, the proportion of elements such as N, O, H in the gas gathered at the top position of the reactant gas is approximately the same, so that the reactant gas with the same proportion of elements can be uniformly diffused into the injection section 30 for continuous heating after entering the injection section 30, and the proportion of elements such as N, O, H in the reactant gas output from the gas outlet 50 is further ensured to be approximately the same.
The preheating section 10 has a certain height, so that more preheating space can be provided for the gas, but the height of the preheating section 10 is not limited in this embodiment, and can be adjusted according to actual requirements.
In this embodiment, the preheating section 10, the transition section 20 and the injection section 30 are all made of quartz. As is well known, the quartz has a very small linear expansion coefficient and very good thermal shock resistance, and has very high heat resistance, and a normal use temperature of 1100-1200 ℃ and a short use time of 1400 ℃, so that it is seen that the preheating section 10, the transition section 20 and the injection section 30 made of quartz are very resistant to high temperature, and the safety and reliability of the gas injection pipe are improved.
Based on the above, the invention also provides an ONO furnace tube deposition device, which comprises the ONO furnace tube and the gas injection tube, wherein the gas injection tube is fixed on the inner side wall of the cavity of the ONO furnace tube.
In this embodiment, the gas outlet 50 on the gas injection pipe faces the center of the cavity, and the gas injection pipe may be fixed on the inner sidewall of the cavity by bonding.
In this embodiment, a heating element is disposed on the outer wall of the cavity of the ONO furnace tube, the heating element is a heating wire, the heating wire is spirally and uniformly coiled on the outer wall of the cavity in the vertical direction, the highest heating temperature of the heating wire can reach 1200 ℃, and the heating wire is uniformly heated at different height positions outside the cavity, so that the reaction gas is uniformly heated at any position in the cavity and the gas injection tube.
The proportion of N, O, H and other elements output by the gas injection pipe is the same, so that the N, H, O elements in the ONO film deposited on the surfaces of wafers at different height positions in the ONO furnace tube have no difference in composition, the uniformity of the film quality of the prepared ONO film is improved, the quality and the quantity of manufactured wafers are improved, the yield of the semiconductor wafers is improved, and the manufacturing cost of the semiconductor wafers is reduced.
In summary, the embodiment of the invention provides a gas injection pipe and an ONO furnace tube deposition device, the gas injection pipe comprises a preheating section 10, a transition section 20 and an injection section 30 which are arranged in a U shape, the top end of the preheating section 10 is connected with the top end of the injection section 30 through the transition section 20, the bottom end of the preheating section 10 is provided with an air inlet 40 for reaction gas to enter, and the injection section 30 is provided with a plurality of air outlets 50 for introducing the reaction gas into a cavity of the ONO furnace tube along the height direction. When the ONO furnace tube is used for film deposition, reaction gas enters the preheating section 10 through the air inlet 40, enters the injection section 30 after being preheated by the preheating section 10, and enters the cavity of the ONO furnace tube through the air outlet 50 on the injection section 30, and in the process, the reaction gas is preheated, so that the reactivity and the flow of the gases at each end are kept consistent, the problem of film uniformity caused by the difference of the concentration and the reactivity of the reaction gas at different positions of the wafer boat in the cavity can be effectively solved, and meanwhile, the utilization rate of the wafer boat is also improved.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the present invention. It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, the present invention is intended to include such modifications and alterations insofar as they come within the scope of the invention or the equivalents thereof.
Claims (10)
1. The utility model provides a gas injection pipe for improve the membranous homogeneity among the ONO boiler tube deposition process, its characterized in that includes preheating section, changeover portion and the injection section that is the setting of U-shaped, the top of preheating section pass through the changeover portion with the top of injection section is connected, the bottom of preheating section is provided with the air inlet that supplies the reaction gas to get into, the injection section is offered along the direction of height a plurality of be used for to let in the cavity of ONO boiler tube the gas outlet of reaction gas.
2. The gas injection tube of claim 1, wherein the size of the gas outlet increases gradually from top to bottom in the height direction.
3. The gas injection tube of claim 2, wherein the gas outlets are evenly distributed in the height direction.
4. A gas injection tube according to any one of claims 1 to 3, wherein the gas outlet is a circular aperture.
5. The gas injection tube of claim 1, wherein there are at least two gas inlets.
6. The gas injection tube of claim 5, wherein there are two gas inlets, one of said gas inlets for N 2 O and NH 3 And the other air inlet is used for allowing DCS air to enter.
7. The gas injection tube of claim 1, wherein the transition section is a straight or curved tube.
8. The gas injection tube of claim 1, wherein the preheating section and the injection section are both straight tubes.
9. The gas injection tube of claim 1, wherein the preheating section, the transition section, and the injection section are all quartz.
10. An ONO furnace tube deposition apparatus comprising an ONO furnace tube and a gas injection tube according to any one of claims 1-9, the gas injection tube being secured to an inner sidewall of a cavity of the ONO furnace tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310171791.3A CN116288270A (en) | 2023-02-24 | 2023-02-24 | Gas injection tube and ONO furnace tube deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310171791.3A CN116288270A (en) | 2023-02-24 | 2023-02-24 | Gas injection tube and ONO furnace tube deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116288270A true CN116288270A (en) | 2023-06-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310171791.3A Pending CN116288270A (en) | 2023-02-24 | 2023-02-24 | Gas injection tube and ONO furnace tube deposition device |
Country Status (1)
| Country | Link |
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| CN (1) | CN116288270A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130048520A (en) * | 2011-11-02 | 2013-05-10 | 우범제 | Gas distribution system of vertical diffusion furnace for manufacturing semiconductor |
| CN108690972A (en) * | 2018-08-06 | 2018-10-23 | 长江存储科技有限责任公司 | Gas injection tube and film deposition device for film deposition device |
| CN109554685A (en) * | 2018-11-30 | 2019-04-02 | 上海华力微电子有限公司 | Gas injection apparatus and high temperature furnace pipe |
| CN112575312A (en) * | 2019-09-30 | 2021-03-30 | 长鑫存储技术有限公司 | Thin film manufacturing apparatus and thin film manufacturing method |
-
2023
- 2023-02-24 CN CN202310171791.3A patent/CN116288270A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130048520A (en) * | 2011-11-02 | 2013-05-10 | 우범제 | Gas distribution system of vertical diffusion furnace for manufacturing semiconductor |
| CN108690972A (en) * | 2018-08-06 | 2018-10-23 | 长江存储科技有限责任公司 | Gas injection tube and film deposition device for film deposition device |
| CN109554685A (en) * | 2018-11-30 | 2019-04-02 | 上海华力微电子有限公司 | Gas injection apparatus and high temperature furnace pipe |
| CN112575312A (en) * | 2019-09-30 | 2021-03-30 | 长鑫存储技术有限公司 | Thin film manufacturing apparatus and thin film manufacturing method |
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